Technical Digest - International Electron Devices Meeting, IEDM, 2011
Abstract Band-gap engineering using SiGe channels to reduce the threshold voltage (V TH) in p-cha... more Abstract Band-gap engineering using SiGe channels to reduce the threshold voltage (V TH) in p-channel MOSFETs has enabled a simplified gate-first high-к/metal gate (HKMG) CMOS integration flow. Integrating Silicon-Germanium channels (cSiGe) on silicon wafers for ...
Technical Digest - International Electron Devices Meeting, IEDM, 2011
Abstract Band-gap engineering using SiGe channels to reduce the threshold voltage (V TH) in p-cha... more Abstract Band-gap engineering using SiGe channels to reduce the threshold voltage (V TH) in p-channel MOSFETs has enabled a simplified gate-first high-к/metal gate (HKMG) CMOS integration flow. Integrating Silicon-Germanium channels (cSiGe) on silicon wafers for ...
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Papers by Y. Hu