23rd European Photovoltaic Solar Energy Conference and Exhibition, 1-5 September 2008, Valencia, Spain, Nov 1, 2008
The continuous decrease of the substrate thickness for industrial silicon solar cells results in ... more The continuous decrease of the substrate thickness for industrial silicon solar cells results in an increased importance of surface passivation. One approach which received much attention in a recent past is the use of a passivation stack formed by Si/SiOx/SiNx:H. In this kind of stack, the oxide layer ensures a low concentration of interface states, while the nitride layer acts as a source of hydrogen. While this hydrogen is known to contribute to bulk passivation, its effect on the Si/SiOx interface is poorly understood. In the present study, the hydrogenation process of a Si/SiOx interface is investigated, where SiOx is a deposited oxide. It is demonstrated that hydrogenation of this interface can lead to effective surface recombination velocities below 150 cm/s, and that this hydrogenation is effective both when atomic or molecular hydrogen is applied.
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Papers by Joachim John