Most emitters today are still homogeneous and consequently must fulfill a compromise between good contacting and as low as possible recombination. The selective emitter concept offers a way out by decoupling doping under contacting areas from the rest of the volume to be phosphorus-doped. In order to reach this, we propose to diffuse the emitter through a patterned diffusion barrier with a given diffusion transparency. The integration aspect arises by taking advantage of this same barrier layer as a passivating element for the solar cell and as a key element for the definition of front side metallization pattern. A first step towards an integrated approach for selective emitter formation is proposed here with the establishment of a reference process for emitter tuning by a thermal oxide barrier. The impact of such a barrier on diffusion profiles and related sheet resistance, emitter saturation current and IV characteristics has been investigated.
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