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    FC 108

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    FC 108

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    fc108

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    FC 108

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    sur 3

    Ordering number:EN3076

    FC108
    NPN Epitaxial Planar Silicon Composite Transistor

    Switching Applications

    Features Package Dimensions


    · On-chip bias resistors (R1=47kΩ, R2=47kΩ) unit:mm
    · Composite type with 2 transistors contained in the 2066
    CP package currently in use, improving the mount-
    [FC108]
    ing efficiency greatly.
    · The FC108 is formed with two chips, being equiva-
    lent to the 2SC3395, placed in one package.
    · Excellent in thermal equilibrium and pair capability.

    Electrical Connection
    C1:Collector1
    C2:Collector2
    B2:Base2
    EC:Emitter Common
    B1:Base1

    SANYO:CP5

    Specifications
    Absolute Maximum Ratings at Ta = 25˚C
    Parameter Symbol Conditions Ratings Unit
    Collector-to-Base Voltage VCBO 50 V
    Collector-to-Emitter Voltage VCEO 50 V
    Emitter-to-Base Voltage VEBO 10 V
    Collector Current IC 100 mA
    Collector Current (Pulse) ICP 200 mA
    Collector Dissipation PC 1 unit 200 mW
    Total Dissipation PT 300 mW
    Junction Temperature Tj 150 ˚C
    Storage Temperature Tstg –55 to+150 ˚C

    Electrical Characteristics at Ta = 25˚C


    Ratings
    Parameter Symbol Conditions Unit
    min typ max
    Collector Cutoff Current ICBO VCB=40V, IE=0 0.1 µA
    Collector Cutoff Current ICEO VCE=40V, IB=0 0.5 µA
    Emitter Cutoff Current IEBO VEB=5V, IC=0 30 53 80 µA
    DC Current Gain hFE VCE=5V, IC=5mA 50
    Gain-Bandwidth Product fT VCE=10V, IC=5mA 250 MHz
    Output Capacitance Cob VCB=10V, f=1MHz 3.3 pF
    C-E Saturation Voltage VCE(sat) IC=5mA. IB=0.25mA 0.1 0.3 V
    C-B Breakdown Voltage V(BR)CBO IC=10µA, IE=0 50 V
    C-E Breakdown Voltage V(BR)CEO IC=100µA, RBE=∞ 50 V
    Input OFF-State Voltage VI(off) VCE=5V, IC=100µA 0.8 1.1 1.5 V
    Input ON-State Voltage VI(on) VCE=0.2V, IC=5mA 1.0 2.5 5.0 V
    Input Resistance R1 32 47 62 kΩ
    Resistance Ratio R1/R2 0.9 1.0 1.1

    Note: The specifications shown above are for each individual transistor.
    Marking:107

    SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters


    TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
    52098HA (KT)/4139MO, TS No.3076-1/2
    FC108
    Sample Application Circuit

    No products described or contained herein are intended for use in surgical implants, life-support systems,
    aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
    the like, the failure of which may directly or indirectly cause injury, death or property loss.
    Anyone purchasing any products described or contained herein for an above-mentioned use shall:
    Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
    subsidiaries and distributors and all their officers and employees, jointly and severally, against any
    and all claims and litigation and all damages, cost and expenses associated with such use:
    Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
    litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
    their officers and employees jointly or severally.
    Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant-
    eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
    are made or implied regarding its use or any infringements of intellectual property rights or other rights of
    third parties.

    This catalog provides information as of May, 1998. Specifications and information herein are subject to
    change without notice.
    PS No.3076-2/2
    www.s-manuals.com

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