PREPARED BY: Irene Kate J.

Barretto

IV-Bonifacio

MAIN TASK
-

Identify and understand the key concepts on integrated circuits

SUB TASK

- demonstrates understanding of intergrated circuits

Integrated Circuits were made possible by experimental discoveries showing that semiconductor devices could perform the functions of vacuum tubes and by mid-20thcentury technology advancements in semiconductor device fabrication. The integration of large numbers of tiny transistors into a small chip was an enormous improvement over the manual assembly of circuits using discrete electronic components. The integrated circuit's mass production capability, reliability, and buildingblock approach to circuit design ensured the rapid adoption of standardized Integrated Circuits in place of designs using discrete transistors.

There are two main advantages of ICs over discrete circuits: cost and performance. Cost is low because the chips, with all their components, are printed as a unit by photolithography rather than being constructed one transistor at a time. Furthermore, much less material is used to construct a packaged IC die than to construct a discrete circuit. Performance is high because the components switch quickly and consume little power (compared to their discrete counterparts) as a result of the small size and close proximity of the components. As of 2006, typical chip areas range from a few square millimeters to around 350 mm 2 , with up to 1 million transistors per mm 2 .

An integrated circuit or monolithic integrated circuit (also referred to as IC, chip, or microchip) is an electronic circuit manufactured by the patterned diffusion of trace elements into the surface of a thin substrate of semiconductor material. Additional materials are deposited and patterned to form interconnections between semiconductor devices.

Integrated circuits are used in virtually all electronic equipment today and have revolutionized the world of electronics. Computers, mobile phones, and other digital appliances are now inextricable parts of the structure of modern societies, made possible by the low cost of production of integrated circuits.
Integrated circuit originally referred to a miniaturized electronic circuit consisting of semiconductor devices, as well as passive components bonded to a substrate or circuit board. This configuration is now commonly referred to as a hybrid integrated circuit. Integrated circuit has since come to refer to the single -piece circuit construction originally known as a monolithic integrated circuit.

1940s
1940 - PN junction Russel Ohl at Bell Labs develops the PN junction that produces 0.5 volts when exposed to light. 1945 - Transistor invented In 1945, Bell Labs established a group to develop a semiconductor replacement for the vacuum tube. The group led by William Shockley, included, John Bardeen, Walter Brattain and others. In 1947 Bardeen and Brattain succeeded in creating an amplifying circuit utilizing a point -contact "transfer resistance" device that later became known as a transistor. Bardeen and Brattain's device was the Point Contact Transistor the first transistor. In 1948, Bardeen and Brattain filed for a patent, that in 1950 was issued to Bell Labs - U.S. patent # 2,524,035, "Three Electrode Circuit Element Utilizing Semiconductive Materials".

1950s
1951 - Junction Transistor invented In 1951, William Shockley developed the junction transistor, a more practical form of the transistor, the point contact transistor was difficult to produce and was replaced by the junction transistor by the mid fifties. By 1954 the transistor was an essential component of the telephone system. Bell labs also licensed the transistor to other companies (for a royalty) and the transistor first appeared in hearing aids followed by radios. In 1956 the importance of the invention of the transistor by Bardeen, Brattain and Shockley was recognized by the Nobel Prize in physics.

1952 - Single crystal silicon is fabricated

1952 - Integrated Circuit concept published English radar scientist Geoffrey W.A. Dummer publishes the concept of the integrated circuit in Washington D.C. on May 7, 1952. "Solid block [with] layers of insulating materials". In 1956 Dummer unsuccessfully attemped to build an integrated circuit.

1954 - First commercial silicon transistor On May 10, 1954, Texas Instruments announced the commercial availability of grown-junction silicon transistors. These first silicon transistors were constructed by cutting a rectangular bar from a silicon crystal that was grown from a melt containing impurities. Silicon transistors were less expensive to produce and operated at higher temperature than germanium transistors. 1954 - Oxide masking process developed Bell Labs developed the oxidation, photomasking, etching, diffusion process that underlies IC production to this day. 1954 - First Transistor Radios Industrial Development Engineer Associates produced the Regency TR-1, the worlds first commercially marketed transistor radio. The radio had a four transistor circuit employing Texas Instruments Germanium transistors. 1955 - First field effect transistor Bell Labs fabricated the first field effect transistor.

1958 - Integrated circuit invented In July of 1958, Jack Kilby was a recent hire at Texas Instruments. Not having accrued enough vacation time yet, Kilby was at work at TI during a summer vacation period that most everyone else had off. On July 24, 1958 in the quiet of the miniaturization lab, Kilby wrote in his lab notebook that circuit elements such as resistors, capacitors, distributed capacitors and transistors, if all made of the same material, could be included in a single chip. By September 12th 1958 Kilby had built a simple oscillator IC with five integrated components. In 1959 Kilby applied for a patent and Texas Instruments was issued U.S. patent # 3,138,743 for "Miniaturized electronic circuits". In 2000 the importance of the IC was recognized when Kilby shared the Nobel prize in physics with two others. Kilby was sited by the Nobel committee "for his part in the invention of the integrated circuit".

Jack Kilby's pioneering integrated circuit was thumbnail size.

1959 - Planar technology invented

Kilby's invention had a serious drawback, the individual circuit elements were connected together with gold wires making the circuit difficult to scale up to any complexity. By late 1958 Swiss-born physicist - Jean Hoerni at Fairchild had developed a structure with N and P junctions formed in silicon. Over the junctions a thin layer of silicon dioxide was used as an insulator and holes were etched open in the silicon dioxide to connect to the junctions. Czech-born physicist - Kurt Lehovec of Sprague Electric developed the technque of using PN junctions to electrically isolate components. In 1959, Robert Noyce also of Fairchild had the idea to create an integrated circuit by combing Hoerni's and Lehovec's processes and evaporating a thin metal layer over the circuits. The metal layer connected down to the junctions through the holes in the silicon dioxide and was then etched into a pattern to interconnect the circuit. Planar technology set the stage for complex integrated circuits and is the process used today.

1960s
1960 - Epitaxial deposition developed Bell Labs developed the technique of Epitaxial Deposition whereby a single crystal layer of material is deposited on a crystalline substrate. Epitaxial deposition is widely used in bipolar and sub-micron CMOS fabrication. 1960 - First MOSFET fabricated Kahng at Bell Labs fabricates the first MOSFET. 1960 - 0.525 inch silicon wafers introduced 1961 - First commercial ICs Fairchild and Texas Instruments both introduce commercial ICs. 1962 - Transistor-Transistor Logic invented

1962 - Semiconductor industry surpasses $1-billion in sales

1963 - First MOS IC RCA produces the first PMOS IC.

1963 - CMOS invented Frank Wanlass at Fairchild Semiconductor originated and published the idea of complementary-MOS (CMOS). It occurred to Wanlass that a complementary circuit of NMOS and PMOS would draw very little current. Initially Wanlass tried to make a monolithic solution, but eventually he was forced to prove the concept with discrete devices. Enhancement mode NMOS transistors were not yet available and so Wanlass was used a depletion mode device biased to the off -state. Amazingly CMOS shrank standby power by six orders of magnitude over equivalent bipolar or PMOS logic gates. On June 18, 1963 Wanlass applied for a patent. On December 5th 1967 Wanlass was issued U.S. Patent # 3,356,858 for "Low Stand -By Power Complementary Field Effect Circuitry". CMOS forms the basis of the vast majority of all high density ICs manufactured today. 1964 - First commercial contact printer Contact printing was the work-horse technology for exposing patterns onto IC wafers into the 1970s. 1964 - 1 inch silicon wafers introduced 1965 - Moore's law In 1965 Gordon Moore, director of research and development at Fairchild Semiconductor wrote a paper for Electronics entitled "Cramming more components onto integrated circuits". In the paper Moore observed that "The complexity for minimum component cost has increased at a rate of roughly a factor of two per year". This observation became known as Moore's law, the number of components per IC double every year. Moore's law was later amended to, the number of components per IC doubles every 18 months. Moore's law hold to this day.

1966 - Self Aligned Gate MOSFETBower and Dill disclose the self aligned gate MOSFET (SAGFET) in a paper entitled"Insulated Gate Field Effect Transistors Fabricated Using the Gate as Source Drain Mask" [25], presented at the 1966 IEDM. The self aligned transitor was first concieved by Bower in 1965 [26]. The slef aligned transistor is the building block of all modern MOSFET technologies. 1966 - 16-bit bipolar memory IBM introduced a 16-bit bipolar memory chip in a System/360 Model 95 they developed for NASA. 1966 - First bipolar logic Motorola Emitter-Coupled-Logic (ECL) 3 input gate. 1966 - Single transistor DRAM cell invented Dr. Robert Dennard at IBM attended a talk on work in thin film magnetic memory. The magnetic memory team used "a piece of magnetic material and a couple of lines passing near it' to store a bit of information. Several months later Dennard developed the idea that a bit could be stored by charging or discharging a capacitor and a single FET could be used to control the process. The single transistor DRAM cell. Virtually all modern DRAMs are based on the 1 transistor cell.

1966 - 1.5 inch silicon wafers introduced 1967 - Floating gate disclosed Kahng and Sze of Bell labs disclosed the use of floating gate devices for memory applications in the Bell System Technical Journal. Floating gates a very common technique used to make EEPROMs. 1967 - MNOS disclosed Wegener, Lincoln, Pao, O'Connell and Oleksiak disclosed the NMOS transistor and it's use in memory. Floating gates are a technique used to make EEPROMs. 1968 - 64-bit bipolar array chip IBM introduced a 64-bit bipolar array chip as a high speed memory buffer in the System/360 Model 85. The chip contained 64 storage cells and 664 components. 1969 - BiCMOS invented Lin, Ho, Iyer and Kwong disclose a "Complementary MOS-Bipolar Transistor Structure" at IEDM.

1970 - 1st NMOS IC

1970 - First commercial DRAM - 1Kbits [9],[12] In approximately 1969, William Regitz of Honeywell was looking for a semiconductor company to share in the development of a novel DRAM cell developed by himself or one of his coworkers. Intel was very interested in the technology and started a development program that initially produced the i1102, and although working parts were produced there were problems with the 1102. Based on work Ted Hoff had done looking at possible 3 transistor DRAM cell topologies, and the idea of a buried contact, probably by Ted Rowe, a schematic for an alternative part was developed by Leslie Vadasz and Joel Karp and the chip design was assigned to Bob Abbott. The resulting product was the i1103 and was introduced to the market in October 1970. The part originally had yield issues and John Reed, the product engineer had to make several revisions to the part before "good" yields and performance were achieved. Thei1103 was manufactured on a 6 mask silicon gate PMOS process with 8m minimum features. The resulting product had a 2,400m 2 memory cell size, a die size just under 10mm 2 and sold for around $21.
1970 - IBM replaces magnetic memory with transistor based memory The IBM System/370 Model 145 introduced all transistor memory. 1970 - 2.25 inch silicon wafers introduced 1971 - UVEPROM invented [11] Shortly after joining Intel in 1969 and after the 1kbit DRAM was released, Dov Frohman invented UVEPROM an electrically programmable memory that holds the programmed values until erased by intense ultraviolet light. Frohman invented, developed, designed and fabricated the first UVEPROM.

1971 - Microprocessor invented 1972 - Digital Signal Processor invented 1972 - MOSFET Scaling 1972 - Intel 8008 The 8008 was the 8 bit successor to the 4004 and was used in the Mark-8 computer, one of the first home computers [22]. Manufactured in the same silicon gate PMOS process with 10m linewidths, 1 polysilicon layer and 1 metal layer, the 8008 had 3,500 transistors, a 200kHz clock speed and a 15.2mm 2 die size.

1973 - Commercial BiCMOS ICs Polinsky, Schade and Keller of RCA disclose "CMOS-Bipolar Monolithic Integrated Circuit Technology" at IEDM. The metal gate BiCMOS technology is used to make operational amplifiers.
1973 - Projection Printer Invented

1973 - 3 inch silicon wafers introduced

1974 - First 4Kbit DRAM with 1T Cell The 4Kbit DRAM introduced the 1 transistor cell and the silicon gate NMOS process. The 3T to 1T memory cell transition is the first major DRAM transition. The silicon gate NMOS process required 6 masks and had 8m minimum features. The resulting product had a 1,280m2 memory cell size, a die size of approximately 15mm 2 and sold for around $18 at introduction. 1974 - Intel 8080 The 8080 was used in the Altair computer [22]. The 8080 was manufactured in a silicon gate NMOS process with 6m linewidths, 1 polysilicon layer and 1 metal layer, the 8080 had 6,000 transistors, a 2MHz clock speed and a 20.0mm 2 die size. 1975 - 100mm silicon wafers introduced 1976 - 16Kbit DRAM introduced 1978 - Intel 8086/8088 The 8088 were manufactured in a silicon gate NMOS process with 3m linewidths, 1 polysilicon layer and 1 metal layer, the 8088/8086 had 29,000 transistors, a 5 to 10MHz clock speed and a 28.6mm 2 die size. Both processors were identical 16 bit designs with the 8086 having a 16 bit bus and the 8088 having an 8 bit bus. 1978 - Step and Repeat System invented GCA introduces the step and repeat system for wafer exposure. Step and repeat revolutionizes photolithography in the eighties increasing resolution and enabling linewidth shrinks [13].

1978 - Semiconductor Industry passes $10-billion.

1979 - 64Kbit DRAM introduced 1979 - 125mm silicon wafers introdcued

1980s
1980 - Modern DSP commercially available Based on our definition of a "modern" DSP as a single chip, programmable stand alone solution with parallelism in multiply -add and memory access, the first commercially available DSPs were introduced in 1980 by Lucent and NEC. Earlier parts such as the AMI S2811 in 1978 required a microprocessor for initialization and configuration, and the Intel 2920 in 1979 lacked a multiplier. 1980 - IBM selects Intel 8088 for the PC. 1981 - 150mm silicon wafers introduced 1982 - 256Kbit DRAM 1982 - Intel 80286 The 80286 was a major step forward in processor performance while maintaining backward compatibility for software. The 80286 was manufactured in a silicon gate CMOS process with 1.5m linewidths, 1 polysilicon layer and 2 metal layers, the 80286 had 134,000 transistors, a 6 to 12MHz clock speed and a 68.7mm 2 die size. 1983 - 1st CMOS DRAM Intel develops a 1Mbit CMOS DRAM, the 1st CMOS DRAM. Ironically Intel soon exits the DRAM business.

1983 - EEPROM Invented

1984 - Flash memory invented 1985 - Commercial Flash memory introduced Toshiba introduces a 256Kbit flash memory chip.

1985 - Intel 80386DX The 80386 was the first 32 bit processor from Intel. The 80386 was manufactured in a silicon gate CMOS process with 1.5m linewidths, required 10 mask layers and had 1 polysilicon layer and 2 metal layers, the 80386 had 275,000 transistors, a 16 to 33MHz clock speed and a 104mm 2 die size. 1985 - 200mm silicon wafers introduced [24] 1986 - ETOX style Flash introduced [21] 1986 - 1Mbit DRAM 1988 - 4Mbit DRAM 1989 - Intel 80486DXTM The 80486 was the first processor from Intel to include a floating point coprocessor on chip and execute 1 instruction per clock cycle. The 80486 was manufactured in a silicon gate CMOS process with 1.0m linewidths, required 12 mask layers and had 1 polysilicon layer and 3 metal layers, the 80486 had 1.2 million transistors, a 25 to 50MHz clock speed and a 163mm 2 die size.

1990s
1991 - 16Mbit DRAM 1993 - Intel Pentium TM The Pentium is the first processor from Intel capable of executing more than 1 instruction per clock cycle. The Pentium was manufactured in a silicon gate BiCMOS process with 0.8m linewidths, required 18 mask layers and had 1 polysilicon layer and 3 metal layers, the Pentium had 3.1 million transistors, a 60 to 66MHz clock speed and a 264mm 2 die size.

1994 - Semiconductor Industry passes $100-billion .

1994 - 64Mbit DRAM 1995 - Intel Pentium Pro TM The Pentium Pro introduced a dual cavity package with the Pentium Pro chip and a Cache chip housed together. The bus to the cache ran at the same speed as the processor. The Pentium Pro was manufactured in a silicon gate BiCMOS process with 0.35m linewidths, required 20 mask layers and had 1 polysilicon layer and 4 metal layers, the Pentium Pro had 5.5 million transistors, a 150 to 200MHz clock speed and a 310mm 2 die size. 1996 - 300mm silicon wafers introduced [24] 1997 - Intel Pentium II TM 1998 - 256Mbit DRAM 1999 - Intel Pentium III TM

2000s
2000 - Intel Pentium 4 TM (180nm) The Pentium 4 introduced an integer unit running at twice the processor speed. The Pentium 4 was manufactured in a silicon gate CMOS process with 0.18m linewidths, required 21 mask layers and had 1 polysilicon layer and 6 metal layers, the Pentium 4 had 42 million transistors, a 1,400 to 1,500MHz clock speed and a 224mm 2 die size. 2001 - Intel Pentium 4 TM (130nm) The 130nm Pentium 4 incorporates 55 million transitors and yet still provides a die size shrink to 146.0 mm 2 . At 130nm the process is a single polysilicon CMOS process with 6 copper layers and requires an estimated 26 mask. 2002 - 1Gb DRAM enters volume 2003 - Intel Pentium 4 TM (90nm) Intel introduced a 90nm process in 2003. The single polysilicon CMOS process has 7 layers of coper metal and requires an estimated 29 mask layers. The 90nm Pentium 4 has 125 million transitors and the die size shrinks to 112 mm 2 . The most notable part of the 90nm process is the introduction of strained silicon by using embedded silicon germanium and tensile stress layers. 2005 - Intel Pentium 4 TM (65nm) Intel introduced a 65nm process in 2005. The single polysilicon CMOS process has 8 layers of coper metal and requires an estimated 31 mask layers. The 65nm Pentium 4 has 169 million transitors and the die sizeis 189.9 mm 2 . Intel soon swithced to the new smaller "Core" design. 2007 - Intel Core 2 Duo (45nm)Intel's 45nm debuted in 2007 as the first high-k gate oxide with dual metal gates in production. The 45nm process is a single polysiliocn process with 9 copper layers and requires and estimated 36 mask layers. The 45nm Core 2 Duo die size is 105.78mm 2 and packs in 410 million transitors.

SSI (small-scale integration) circuits were crucial to early aerospace projects, and aerospace projects helped inspire development of the technology. Both the Minuteman missile and Apollo program needed lightweight digital computers for their inertial guidance systems; the Apollo guidanc computer led and motivated the integrated-circuit technology, while the Minuteman missile forced it into mass production. The Minuteman missile program and various other Navy programs accounted for the total $4 million integrated circuit market in 1962, and by 1968, U.S. Government space and defense spending still accounted for 37% of the $312 million total production. The demand by the U.S. Government supported the nascent integrated circuit market until costs fell enough to allow firms to penetrate the industrial and eventually the consumer markets. The average price per integrated circuit dropped from $50.00 in 1962 to $2.33 in 1968 Integrated circuits began to appear in consumer products by the turn of the decade, a typical application being FM intercarrier sound processing in television receivers.

The next step in the development of integrated circuits, taken in the late 1960s, introduced devices which contained hundreds of transistors on each chip, called "mediumscale integration" (MSI). They were attractive economically because while they cost little more to produce than SSI devices, they allowed more complex systems to be produced using smaller circuit boards, less assembly work (because of fewer separate components), and a number of other advantages.

Further development, driven by the same economic factors, led to "large-scale integration" (LSI) in the mid 1970s, with tens of thousands of transistors per chip. Integrated circuits such as 1K-bit RAMs, calculator chips, and the first microprocessors, that began to be manufactured in moderate quantities in the early 1970s, had under 4000 transistors. True LSI circuits, approaching 10,000 transistors, began to be produced around 1974, for computer main memories and second-generation microprocessors.

The final step in the development process, starting in the 1980s and continuing through the present, was "very large -scale integration" (VLSI). The development started with hundreds of thousands of transistors in the early 1980s, and continues beyond several billion transistors as of 2009. Multiple developments were required to achieve this increased density. Manufacturers moved to smaller design rules and cleaner fabrication facilities, so that they could make chips with more transistors and maintain adequate yield. The path of process improvements was summarized by the International Technology Roadmap for Semiconductors (ITRS). Design tools improved enough to make it practical to finish these designs in a reasonable time. The more energy efficient CMOS replaced NMOS and PMOS, avoiding a prohibitive increase in power consumption. In 1986 the first one megabit RAM chips were introduced, which contained more than one million transistors. Microprocessor chips passed the million transistor mark in 1989 and the billion transistor mark in 2005. The trend continues largely unabated, with chips introduced in 2007 containing tens of billions of memory transistors

Wafer-scale integration (WSI) is a system of building verylarge integrated circuits that uses an entire silicon wafer to produce a single "super-chip". Through a combination of large size and reduced packaging, WSI could lead to dramatically reduced costs for some systems, notably massively parallel supercomputers. The name is taken from the term Very -LargeScale Integration, the current state of the art when WSI was being developed. A system-on-a-chip (SoC or SOC) is an integrated circuit in which all the components needed for a computer or other system are included on a single chip. The design of such a device can be complex and costly, and building disparate components on a single piece of silicon may compromise the efficiency of some elements. However, these drawbacks are offset by lower manufacturing and assembly costs and by a greatly reduced power budget: because signals among the components are kept on-die, much less power is required. A three-dimensional integrated circuit (3D-IC) has two or more layers of active electronic components that are integrated both vertically and horizontally into a single circuit. Communication between layers uses on -die signaling, so power consumption is much lower than in equivalent separate circuits. Judicious use of short vertical wires can substantially reduce overall wire length for faster operation.

Digital integrated circuits can contain

anything from one to millions of logic gates, flip-flops, multiplexers, and other circuits in a few square millimeters. The small size of these circuits allows high speed, low power dissipation, and reduced manufacturing cost compared with board-level integration. These digital ICs, typically microprocessors, DSPs, and micro controllers, work using binary mathematics to process "one" and "zero" signals.

Analog ICs , such as sensors, power

management circuits, and operational amplifiers, work by processing continuous signals. They perform functions like amplification,active filtering, demodulation, and mixing. Analog ICs ease the burden on circuit designers by having expertly designed analog circuits available instead of designing a difficult analog circuit from scratch. ICs can also combine analog and digital circuits on a single chip to create functions such as A/D converters and D/A converters. Such circuits offer smaller size and lower cost, but must carefully account for signal interference.

Fabrication The semiconductors of the periodic table of the chemical elements were identified as the most likely materials for a solidstate vacuum tube . Starting with copper oxide, proceeding to germanium, then silicon, the materials were systematically studied in the 1940s and 1950s. Today, silicon monocrystals are the main substrate used for ICs although some III-V compounds of the periodic table such as gallium arsenide are used for specialized applications like LEDs, lasers, solar cells and the highest-speed integrated circuits. It took decades to perfect methods of creating crystals without defects in the crystalline structure of the semiconducting material. Semiconductor ICs are fabricated in a layer process which includes these key process steps:

Imaging Deposition

Etching
The main process steps are supplemented by doping and cleaning.

Packaging
The earliest integrated circuits were packaged in ceramic flat packs, which continued to be used by the military for their reliability and small size for many years. Commercial circuit packaging quickly moved to the dual in-line package (DIP), first in ceramic and later in plastic. In the 1980s pin counts of VLSI circuits exceeded the practical limit for DIP packaging, leading to pin grid array (PGA) and leadless chip carrier (LCC) packages. Surface mount packaging appeared in the early 1980s and became popular in the late 1980s, using finer lead pitch with leads formed as either gull-wing or J-lead, as exemplified by small-outline integrated circuit -- a carrier which occupies an area about 3050% less than an equivalent DIP, with a typical thickness that is 70% less. This package has "gull wing" leads protruding from the two long sides and a lead spacing of 0.050 inches. In the late 1990s, plastic quad flat pack (PQFP) and thin smalloutline package (TSOP) packages became the most common for high pin count devices, though PGA packages are still often used for high-end microprocessors. Intel and AMD are currently transitioning from PGA packages on high-end microprocessors to land grid array(LGA) packages.

Chip labeling and manufacture date

Most integrated circuits large enough to include identifying information include four common sections: the manufacturer's name or logo, the part number, a part production batch number and/or serial number, and a four-digit code that identifies when the chip was manufactured. Extremely small surface mount technology parts often bear only a number used in a manufacturer's lookup table to find the chip characteristics. The manufacturing date is commonly represented as a two-digit year followed by a twodigit week code, such that a part bearing the code 8341 was manufactured in week 41 of 1983, or approximately in October 1983.

IC's have the advantage in weight, size and power consumption, giving IC's the nod on portability. They are also less prone to damage from physical jarring -known as "solid state. Disadvantage of integrated circuits is that they can be unsuitable for custom designed equipment, because high volumes are needed in order to justify the design and tooling costs. One way of creating some flexibility is to use a hybrid design - with key components in the IC, with some components left outside the IC to provide flexibility in component values. Another disadvantage of integrated circuits is that design corrections and incremental design improvements are not readily made. If a design error is found in a traditional circuit, it is relatively easy to modify each system to fix the problem, even under warranty.

Name the advantages and disadvantages of ICs.

Advantages Disadvantages

Answer the ff. questions.

What is an intergrated circuit ?

Who invented the integrated circuit ? When was the integrated circuit invented? In 1959, he had the idea to create an integrated circuit by combing Hoerni's and Lehovec's processes and evaporating a thin metal layer over the circuits. Who is he ?

Give the meaning of the ff. acronyms.

SSI MSI LSI WSI SOC 3D-IC -

Describe each classification of integrated circuit.

Digital

Analog

Mixed signal(both digital and analog)

Draw the integrated symbol. (10pts.)

Intel 65-Nanometer Technology Baker, R. J. (2010). CMOS: Circuit Design, Layout, and Simulation, Third Edition . WileyIEEE. ISBN 978-0-470-881323. http://CMOSedu.com/ www.wikipedia.com http://www.icknowledge.com/history/1980s.ht ml http://www.nobelprize.org/educational/physics /integrated_circuit/history/

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