ED - Mid Lecture-7

Electronic Devices
Mid Term
Lecture - 07
Reference book:
Electronic Devices and Circuit Theory (Chapter-3)
Robert L. Boylestad and L. Nashelsky , (11 th Edition)
Faculty of Engineering
American International University-Bangladesh
Objectives
• Become familiar with the basic construction and operation of the Bipolar Junction
Transistor.
• Be able to apply the proper biasing to insure operation in the active region.
• Recognize and be able to explain the characteristics of a npn or pnp transistor.
• Become familiar with the important parameters that define the response of a transistor.
• Be able to test a transistor and identify the three terminals.
INTRODUCTION
• The basic of electronic system nowadays is semiconductor device.
• The famous and commonly use of this device is BJTs (Bipolar Junction
Transistors).
• It can be used as amplifier and logic switches.
• BJT consists of three terminal:
» collector : C (Lightly Doped)
» base : B (Very lightly doped)
» emitter : E (Heavily doped)
• Two types of BJT : p-n-p and n-p-n
TRANSISTOR CONSTRUCTION
• 3 layer semiconductor device consisting:

» two n- and one p-type layers of material = n-p-n transistor
» two p- and one n-type layers of material = p-n-p transistor
• The term bipolar reflects the fact that holes and electrons participate in the
injection process into the oppositely polarized material.
• A single p-n junction has two different types of bias:

» forward bias
» reverse bias
• Thus, a two-p-n-junction device has four types of bias.
POSITION OF THE TERMINALS AND SYMBOL OF BJT
• Base is located at the middle

and more thin from the level of
collector and emitter.
• The emitter and collector

terminals are made of the same
type of semiconductor material,
while the base of the other type
of material.
TRANSISTOR OPERATION
• The basic operation will be described using the p-n-p transistor.

• The operation of the n-p-n transistor is exactly the same if the roles played by
the electron and hole are interchanged.
• One p-n junction of a transistor is reverse-biased, whereas the other is
forward-biased.
• Both biasing potentials have been applied to

a p-n-p transistor and resulting majority and
minority carrier flows indicated.
• Majority carriers (+) will diffuse across the
forward-biased p-n junction into the n-type
material.
• A very small number of carriers (+) will go
through n-type material to the base terminal.
Resulting IB is typically in order of
microamperes.
• The large number of majority carriers will
diffuse across the reverse-biased junction
into the p-type material connected to the
collector terminal.
• Majority carriers can cross the reverse-biased junction because the injected
majority carriers will appear as minority carriers in the n-type material.
• Applying KCL to the transistor :
• The collector current comprises of two components – the majority and

minority carriers
• ICO = IC current with emitter terminal open and is called leakage current.
COMMON-BASE CONFIGURATION
• Common-base terminology is derived

from the fact that the :
- base is common to both input
and output of the configuration.
- base is usually the terminal
closest to or at ground potential.
• All current directions will refer to
conventional (hole) flow and the arrows
in all electronic symbols have a direction
defined by this convention.
• Note that the applied biasing (voltage
sources) are such as to establish current
in the direction indicated for each branch.
• To describe the behavior of common-base

amplifiers requires two set of
characteristics:
• Input or driving point characteristics.
• Output or collector characteristics
• The output characteristics has 3

basic regions:
• Active region – defined by the
biasing arrangements
• Cutoff region – region where
the collector current is 0A
• Saturation region- region of
the characteristics to the left
of VCB = 0V
ACTIVE REGION SATURATION REGION CUTOFF REGION
IE increased, IC increased
BE junction forward biased and BE and CB junctions are BE and CB junction are
CB junction reverse biased forward biased reverse biased
IC ≈ IE No current flow at collector,

only leakage current
IC does not depend on VCB Small change in VCB will cause

big difference in IC
Suitable region for the The allocation for this region is Region below the line of IE =
transistor to work as an to the left of the VCB = 0 V 0
amplifier
• The curves (output characteristics) clearly

indicate that a first approximation to the
relationship between IE and IC in the active region
is given by
IC ≈ IE
• Once a transistor is in the ‘on’ state, the base-
emitter voltage will be assumed to be
VBE = 0.7V
• In the dc mode the level of IC and IE due to the

majority carriers are related by a quantity called
alpha
• It can then be summarized to (ignore ICBO due to small value)
• For ac situations where the point of operation moves on the characteristics

curve, an ac alpha defined by
• Alpha a common base current gain factor that shows the efficiency by
calculating the current percent from current flow from emitter to collector.
The value of is typical from 0.9 ~ 0.998.
Thank You

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Electronic Devices

• Recognize and be able to explain the characteristics of a npn or pnp transistor.

• Be able to test a transistor and identify the three terminals.

• 3 layer semiconductor device consisting:

• A single p-n junction has two different types of bias:

• Thus, a two-p-n-junction device has four types of bias.

• Base is located at the middle

• The emitter and collector

• The basic operation will be described using the p-n-p transistor.

• Both biasing potentials have been applied to

• Applying KCL to the transistor :

• The collector current comprises of two components – the majority and

• Common-base terminology is derived

• To describe the behavior of common-base

• The output characteristics has 3

ACTIVE REGION SATURATION REGION CUTOFF REGION

IC ≈ IE No current flow at collector,

IC does not depend on VCB Small change in VCB will cause

• The curves (output characteristics) clearly

• In the dc mode the level of IC and IE due to the

• It can then be summarized to (ignore ICBO due to small value)

• For ac situations where the point of operation moves on the characteristics

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