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    Chapter 5c BJT - EE

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    The given bipolar junction transistor has a current gain (β) of 100. Given an input current (IE) of 2mA, the input base current (IB) is calculated to be 20μA. Using the current gain, the

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    Chapter 5c BJT - EE

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    HarithZakaria
    92 views33 pages
    The given bipolar junction transistor has a current gain (β) of 100. Given an input current (IE) of 2mA, the input base current (IB) is calculated to be 20μA. Using the current gain, the

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    The given bipolar junction transistor has a current gain (β) of 100. Given an input current (IE) of 2mA, the input base current (IB) is calculated to be 20μA. Using the current gain, the

    Copyright:

    © All Rights Reserved
    Download as PPTX, PDF, TXT or read online from Scribd
    Download as pptx, pdf, or txt
    92 views33 pages

    Chapter 5c BJT - EE

    Uploaded by

    HarithZakaria
    The given bipolar junction transistor has a current gain (β) of 100. Given an input current (IE) of 2mA, the input base current (IB) is calculated to be 20μA. Using the current gain, the

    Copyright:

    © All Rights Reserved
    Download as PPTX, PDF, TXT or read online from Scribd
    Download as pptx, pdf, or txt
    of 33

    BMM 2433

    Electric & Electronics Technology

    Faculty of Mechanical Engineering


    Topic 11:
    BJT
    (BIPOLAR JUNCTION TRANSISTOR)
    Introduction
    • Beside diodes, the most popular semiconductor devices is transistors. Eg:
    Bipolar Junction Transistor (BJT)
    • Transistors are more complex and can be used in many ways
    • Most important feature: can amplify signals and as switch
    • Amplification can make weak signal strong (make sounds louder and signal
    levels greater), in general, provide function called Gain
    Modern Transistors
    Transistor Structure
    • BJT is bipolar because both holes (+) and electrons (-) will take part in the current
    flow through the device
    – N-type regions contains free electrons (negative carriers)
    – P-type regions contains free holes (positive carriers)
    • 2 types of BJT
    – NPN transistor
    – PNP transistor
    • The transistor regions are:
    – Emitter (E) – send the carriers into the base region and then on to the
    collector
    – Base (B) – acts as control region. It can allow none,some or many carriers to
    flow
    – Collector (C) – collects the carriers
    PNP and NPN transistor structure

    P N
    N P

    P N

    Ic(mA) IC(mA)
    IB(µA) IB(µA)

    IE(mA) IE(mA)

    Arrow shows the current flows


    NPN Transistor Structure

    The collector is lightly doped. N C

    The base is thin and


    P B
    is lightly doped.

    N E
    The emitter is heavily doped.
    Transistor configuration
    • Transistor configuration –is a connection of transistor to get variety operation.
    • 3 types of configuration:
    – Common Collector.
    – Common Base.
    – Common Emitter
    Common-Collector Configuration
     The input signal is applied to the base terminal and the output is taken
    from the emitter terminal.
    • Collector terminal is common to the input and output of the circuit
    • Input – BC
    • Output – EC
    • Input = Output
    Common-Base Configuration
    • Base terminal is a common point for input and output.
    • Input – EB
    • Output – CB
    • Not applicable as an amplifier because the relation between input current gain (I E)
    and output current gain (IC) is approximately 1.
    Common-Emitter Configuration
    • Emitter terminal is common for input and output circuit
    • Input – BE
    • Output – CE
    • Mostly applied in practical amplifier circuits, since it provides good voltage, current
    and power gain
    NPN Transistor Bias
    No current flows. N C
    The C-B junction
    is reverse biased.
    P B

    N E
    NPN Transistor Bias
    N C

    The B-E junction P B


    is forward biased.
    N E

    Current flows.
    NPN Transistor Bias
    IC
    Current flows
    everywhere. N C

    When both junctions P B


    are biased.... IB
    N E
    Note that IB is smaller
    IE
    than IE or IC.
    Note: when the IC
    switch opens, all
    currents go to zero. N C

    Although IB is smaller
    P B
    it controls IE and IC.
    IB
    Gain is something small N E
    controlling something large
    IE
    (IB is small).
    IC = 99 mA

    The current gain from


    base to collector C
    is called b.
    IB = 1 mA P B

    99
    IC mA N E
    b = = 99
    1IBmA

    IE = 100 mA
    IC = 99 mA

    Kirchhoff’s
    current law: C

    IB = 1 mA P B
    IE = IB + IC
    = 1 mA + 99 mA N E
    = 100 mA

    IE = 100 mA
    IC = 99 mA

    In a PNP transistor,
    holes flow from C
    emitter to collector.

    IB = 1 mA B
    Notice the PNP
    bias voltages.
    E

    IE = 100 mA
    NPN Schematic Symbol

    Collector

    C
    Base B E

    Emitter
    Memory aid: NPN
    means Not Pointing iN.
    PNP Schematic Symbol

    Collector

    C
    Base B E

    Emitter
    BJT Relationships - Equations
    IE IC IE IC
    - VCE + + VEC -
    E C E C
    - -
    + +
    VBE IB VBC VEB VCB
    IB
    + + - -
    B B

    NPN PNP
    IE = I B + I C IE = I B + I C
    VCE = -VBC + VBE VEC = VEB - VCB

    Note: The equations seen above are for the transistor, not the circuit.
    DC  and DC 
     = Common-emitter current gain
     = Common-base current gain
     = IC  = IC
    IB IE

    The relationships between the two parameters are:


    =  = 
    +1 1-

    Note:  and  are sometimes referred to as dc and dc because the
    relationships being dealt with in the BJT are DC.
    Determining the Operating Region
    of a BJT
    • VB = V1 = 2V
    • VE = V2 = 1.3V
    • VC = V3 = 8V

    • What can be said about


    the operating region of
    the transistor?
    • VBE = VB − VE = 0.7 V.
    I-V Characteristic for CE configuration :
    Input characteristic
    • Input characteristic: input
    current (IB) against input
    voltage (VBE) for several output
    voltage (VCE)
    • From the graph
    – IB = 0 A VBE < 0.7V (Si)
    – IB = value VBE > 0.7V (Si)
    • The transistor turned on when
    VBE = 0.7V
    I-V Characteristic for CE configuration :
    Output characteristic
    • Output characteristic: output
    current (IC) against output
    voltage (VCE) for several
    input current (IB)
    • 3 operating regions:
    – Saturation region
    – Cut-off region
    – Active region
    I-V Characteristic for CE configuration
    : Output characteristic

    • Saturation region – in which both junctions are forward-biased and I C increase


    linearly with VCE

    • Cut-off region – where both junctions are reverse-biased, the I B is very small, and
    essentially no IC flows, IC is essentially zero with increasing VCE

    • Active region – in which the transistor can act as a linear amplifier, where the BE
    junction is forward-biased and BC junction is reverse-biased. I C increases drastically
    although only small changes of IB.

    • Saturation and cut-off regions – areas where the transistor can operate as a switch

    • Active region – area where transistor operates as an amplifier


    Transistors as Amplifiers

    • BJT – common emitter mode


    • In Linear Active Region
    • Significant current Gain

    Example
    let Gain, b = 80
    VB = 2V
    VE = 1.3V

    Find IC and VC
    Transistors as Amplifiers

    VBE = VB – VE = 0.7V
    IB = VBB – VB 4-2
    =
    RB 40,000
    = 50 mA
    IC = b x IB = 80 x 50 mA
    = 4mA

    VC = Vcc – IC x RC
    = 12 – (4x10-3)(1x103)
    =8V

    VCE = VC – VE = 8 – 1.3
    = 6.7 V
    Compute the parameters of this circuit (=100).

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