CH 02 Fabrication

CMOS Digital Integrated Circuits
Chapter 2
Fabrication of MOSFETs
S.M. Kang and Y. Leblebici
1 © CMOS Digital Integrated Circuits – 3rd Edition

Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction or display.
Categories of Materials
Materials can be categorized into three main

groups regarding their electrical conduction
properties:
Insulators
Conductors
Semiconductors

Semiconductors
While there are numerous
semiconductor materials
available, by far the most
popular material is Silicon.
GaAs, InP and SiGe are

compound semiconductors
that are used in specialized
devices.
The success of a semiconductor material depends on how easy it is to

process and how well it allows reliable high-volume fabrication.

Single Crystal Growth
Pure silicon is melted in a
pot (1400C) and a small
seed containing the
desired crystal orientation
is inserted into molten
silicon and slowly
(1mm/minute) pulled out.

Single Crystal Growth
The silicon crystal (in some

cases also containing
doping) is manufactured
(pulled) as a cylinder with
a diameter of 8-12 inches.
This cylinder is carefully

sawed into thin disks
(wafers). The wafers are
later polished and marked
for crystal orientation.

Lithography
An IC consists of
several layers of
material that are
manufactured in
successive steps.
Lithography is used
to selectively process
the layers, where the
2-D mask geometry is
copied on the surface.

Lithography
The surface of the wafer is coated
with a photosensitive material, the
photoresist. The mask pattern is
developed on the photoresist, with
UV light exposure.
Depending on the type of the

photoresist (negative or positive),
the exposed or unexposed parts
of the photoresist change their
property and become resistant
to certain types of solvents.
Subsequent processing steps remove the undeveloped photoresist from

the wafer. The developed pattern (usually) protects the underlying layer
from an etching process. The photoresist is removed after patterning on
the lower layer is completed.
Etching
Etching is a common process to
pattern material on the surface.
Once the desired shape is
patterned with photoresist, the
unprotected areas are etched
away, using wet or dry etch
techniques.

Patterning of Features on SiO2

Patterning of Features on SiO2

Oxide Growth / Oxide Deposition
Oxidation of the silicon
surface creates a SiO2
layer that acts as an
insulator. Oxide layers
are also used to isolate
metal interconnections.
An annealing step is required to restore the

crystal structure after thermal oxidation.

Ion Implantation
Ion implantation is
used to add doping
materials to change
the electrical
characteristics of
silicon locally. The
dopant ions penetrate
the surface, with a
penetration depth that
is proportional to their
kinetic energy.

Thin Film Deposition
While some of the structures can be
grown on silicon substrate, most of
the other materials (especially metal
and oxide) need to be deposited on
the surface.
In most cases, the material that is

deposited on the whole surface will
be patterned and selectively etched.
There are two main methods for thin

film deposition:
 PVD Physical Vapor

Deposition
 CVD Chemical Vapor
13
Deposition
© CMOS Digital Integrated Circuits – 3rd Edition
Fabrication of an nMOS Transistor




CMOS Process
The CMOS process allows fabrication of nMOS
and pMOS transistors side-by-side on the same
Silicon substrate.

CMOS Process Flow

Well Creation
The first step of

processing is to
create a deeply
implanted n-well.
This is done either

by diffusion or ion
implantation.

Definition of Active Areas
The next step is to
define the active
areas where the
transistors will later
be created.
A thermal oxide is
grown uniformly on
the surface. Then
the active areas are
covered by nitride.
A second thermal
oxidation process
grows thick silicon
dioxide outside the
active areas.
Polysilicon Deposition
The entire surface

is covered with a
thin oxide layer
(gate oxide).
Polysilicon is deposited and

patterned to form the gates of the
nMOS and pMOS transistors.

Source/Drain Implantation
The drain and source

regions of the nMOS
and pMOS transistors
are created by doping.

Device Isolation Techniques
• The MOS transistors need to be electrically isolated during fabrication.
• Isolation is necessary to prevent unwanted conduction paths between devices and to

avoid creation of inversion layer outside channel sepration region and to reduce
leackage currents
•Active area is created, which is surronded by a relatively thick oxide barrier called the
field oxide.
•Ethced field oxide isolation. ( Grow Silicon Oxide and Etched away u
Necessary).
Disadvantage: Thickness of the field oxide leads to large Oxide steps at the boundry of
Active and isolated regions.
This leads to the cracking of layer (Hence Chip Failure) when metal/ Poly is deposited in
next steps
Local Oxidation of Silicon (LOCOS)
•Based on the Principal of selectively Growing the oxide rahter than etching.
•Selectice Growth is achieved by shielding the Active area with Silicon Nitride
(Si3N4)
•First Thin oxide is grown followed by deposition and patterning of Silicon Nitride
(Si3N4)
Exposed area form the isolation region and doped with P Kind of impurities
P
Thick oxide is grown in next step where the area is not covered by Si3N4.
Birds Beak Region.

Etching of Si3N4 and thin Oxide.
Most Popular Techniques.
Later Some techniques are developed to control Bird’s Beak Region.

Summary
• MOS Transistors are stack of gate, oxide, silicon

• Can be viewed as electrically controlled switches
• Build logic gates out of switches
• Draw masks to specify layout of transistors
• Now you know everything necessary to start designing
schematics and layout for a simple chip!
Oxide Deposition
The entire surface is
covered with a field
oxide and the contact
holes are etched into
this oxide to enable
connection to the
underlying layers.

1st Level Metallization
The metal layer is
deposited using a
Physical Vapor
Deposition (PVD)
method, patterned,
and etched.

2nd Level Metallization
The entire surface is
covered with a field
oxide and the contact
holes are etched into
this oxide to enable
connection to the
underlying layers.
Then, the second

(third, fourth, etc…)
layer of metal can be
deposited, patterned
and etched according
to the mask layout.

Lithography Masks
 Each lithography step during fabrication must be

defined by a separate lithography mask.
 Each mask layer is drawn (either manually or using

a design automation tool) according to the layout
design rules.
 The combination (superposition) of all necessary

mask layers completely defines the circuit to be
fabricated.

active

poly

implant

contacts

metal

Composite Mask Layout

Layout Design Rules
 To allow reliable fabrication of each structure, the

mask layers must conform to a set of geometric
layout design rules.
 Usually, the rules (for example: minimum distance

and/or separation between layers) are expressed
as multiples of a scaling factor – lambda ().
 For each different fabrication technology, lambda

factor can be different.

Layout
Design
Rules

Layout
Design
Rules

Layout Rules of a Minimum-Size MOSFET

State-of-the-Art Examples

Multi-Level Interconnect with CMP

Multi-Level Metal Interconnect



Silicon on Insulator (SOI)
The key innovation
in SOI is to build the
transistor structures
on an insulating
material rather than
a common substrate
as in CMOS. This
reduces parasitic
capacitances and
eliminates substrate
noise coupling.

Lithography Resolution is Decreasing
“design shrink”
180 nm 130 nm 90 nm
With each new technology generation, we would be able to fit the

same amount of functionality into a smaller silicon area (ideally).

Lithography Resolution is Decreasing
1989
1982
1979
1971
10 m technology 3 m technology 1.5 m technology 0.8 m technology

12 sqmm 33 sqmm 50 sqmm 81 sqmm
But at the same time, we try to put more functionality in each chip
for each new technology generation, so that the average chip size
actually increases over the years !

Final Remark: Fabrication Cost
Initial investment costs of a new fabrication facility

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CMOS Digital Integrated Circuits

S.M. Kang and Y. Leblebici

1 © CMOS Digital Integrated Circuits – 3rd Edition

Materials can be categorized into three main

2 © CMOS Digital Integrated Circuits – 3rd Edition

GaAs, InP and SiGe are

The success of a semiconductor material depends on how easy it is to

3 © CMOS Digital Integrated Circuits – 3rd Edition

4 © CMOS Digital Integrated Circuits – 3rd Edition

The silicon crystal (in some

This cylinder is carefully

5 © CMOS Digital Integrated Circuits – 3rd Edition

6 © CMOS Digital Integrated Circuits – 3rd Edition

Depending on the type of the

Subsequent processing steps remove the undeveloped photoresist from

8 © CMOS Digital Integrated Circuits – 3rd Edition

9 © CMOS Digital Integrated Circuits – 3rd Edition

10 © CMOS Digital Integrated Circuits – 3rd Edition

An annealing step is required to restore the

11 © CMOS Digital Integrated Circuits – 3rd Edition

12 © CMOS Digital Integrated Circuits – 3rd Edition

In most cases, the material that is

There are two main methods for thin

 PVD Physical Vapor

14 © CMOS Digital Integrated Circuits – 3rd Edition

15 © CMOS Digital Integrated Circuits – 3rd Edition

16 © CMOS Digital Integrated Circuits – 3rd Edition

17 © CMOS Digital Integrated Circuits – 3rd Edition

18 © CMOS Digital Integrated Circuits – 3rd Edition

19 © CMOS Digital Integrated Circuits – 3rd Edition

The first step of

This is done either

20 © CMOS Digital Integrated Circuits – 3rd Edition

The entire surface

Polysilicon is deposited and

22 © CMOS Digital Integrated Circuits – 3rd Edition

The drain and source

23 © CMOS Digital Integrated Circuits – 3rd Edition

• The MOS transistors need to be electrically isolated during fabrication.

• Isolation is necessary to prevent unwanted conduction paths between devices and to

Birds Beak Region.

Etching of Si3N4 and thin Oxide.

Most Popular Techniques.

Later Some techniques are developed to control Bird’s Beak Region.

• MOS Transistors are stack of gate, oxide, silicon

24 © CMOS Digital Integrated Circuits – 3rd Edition

25 © CMOS Digital Integrated Circuits – 3rd Edition

Then, the second

26 © CMOS Digital Integrated Circuits – 3rd Edition

 Each lithography step during fabrication must be

 Each mask layer is drawn (either manually or using

 The combination (superposition) of all necessary

27 © CMOS Digital Integrated Circuits – 3rd Edition

28 © CMOS Digital Integrated Circuits – 3rd Edition

29 © CMOS Digital Integrated Circuits – 3rd Edition

30 © CMOS Digital Integrated Circuits – 3rd Edition

31 © CMOS Digital Integrated Circuits – 3rd Edition

32 © CMOS Digital Integrated Circuits – 3rd Edition

33 © CMOS Digital Integrated Circuits – 3rd Edition