Piezoresistive Sensors - Principles, Materials, Fabrication and Applications
Piezoresistive Sensors - Principles, Materials, Fabrication and Applications
Piezoresistive Sensors - Principles, Materials, Fabrication and Applications
Chang Liu
Micro Actuators, Sensors, Systems Group
University of Illinois at Urbana-Champaign
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Chang Liu
UIUC
Definition of Piezoresistive Sensing
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Chang Liu
UIUC
Stress-Strain Relation
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Chang Liu
UIUC
Physical Causes of Piezoresistivity
Change of relative dimensions, as the resistance is related to
length and cross-sectional area (local).
l
R dR
dL
L
d
L
dA
A A A A2
dR dL d dA
R L A
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Chang Liu
UIUC
Why Electrical Conductivity Change With
Stress/Strain?
Change of electrical conductivity and resistivity as a result of
crystal lattice deformation.
Strain causes the shape of energy band curves to change,
therefore changing the effective mass, m*. Therefore electrical
conductivity changes. h2
m*
d 2 E / dk 2
qt
*
m
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Chang Liu Crystal bandgap structure
UIUC
Basic Formula for Describing Piezoresistivity
R L
G
R L
R stress E
R
G R
l R
l
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Chang Liu
UIUC
Metal Strain Gauge
For metals, the resistivity is not changed
significantly by the stress. The gauge
factor is believed to be contributed by
the change of dimensions. These may
be made from thin wires or metal films
that may be directly fabricated on top of
micro structures. Typical strain gauge
pattern is shown in the following figure.
Thin film strain gauges are typically
fabricated on top of flexible plastic
substrates and glued to surfaces.
etched foil gauges
These strain gauges consist of a
conduction path etched onto metal clad
plastic film. The strain gauges are
designed to be glued, using very special
procedures onto the component to be
tested. When the component stretches,
the strain gauge will also stretch as will
the etched conduction path.
Nickel-Chrominum alloy
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Chang Liu
UIUC
Two Primary Classes of Piezo-resistor
Configuration
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UIUC
Semiconductor Strain Gauge
The very first semiconductor strain gauge used a doped silicon
strip attached to a membrane of another material.
In semiconductor strain gauges, the piezoresistive effect is very
large, leading to much higher G.
P-type silicon has a G up to 200 and n-type has a negative G of
down to -140.
Strain gauges can be locally fabricated in bulk silicon through
ion implantation or diffusion
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Chang Liu
UIUC
Gauge factor of polysilicon with doping
N type P type
Phosphorous doped Si Boron doped Si
-22 30
-20 28
-18 26
-16 24
-14 22
-12 20
-10 18
-8 16
-8 14
-6 12
-4 10
-2 8
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Chang Liu
UIUC
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Chang Liu
UIUC
Why Use Semiconductor Strain Gauge
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Merit of Piezoresistive Sensors Vs Capacitive
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UIUC
Single Crystal Silicon Vs. Polycrystal
Single Crystal Silicon: Uniform crystal orientation throughout
the entire material.
Method of growth: heat melt (bulk); epitaxy (thin film)
Polycrystal silicon: crystal orientation exist with in individual
grains which are separated by grain boundaries.
Methods of growth: low pressure chemical vapor deposition;
sputtering (like a metal).
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Piezoresistivity Components
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Example
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Methods for Compensating Temperature Effect
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UIUC
Wheatstone Bridge Circuit -
Transforming resistance change to voltage change
Common configuration.
Rs R R
R2 R4
Vout Vin
R
1 R2 R3 R4
R R
Vout Vin
R ( R R ) 2 R
R / 2
R Vout Vin
(R ) 2 R R
R 1 R 2
Vin Vin
2 R R 2 2 R R 2( R R
) Temperature in-sensitive!!
2
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Chang Liu
UIUC
Strain Gauge Made of Single Crystal Silicon
- A Pressure Sensor
Process
Etch backside to form
diaphragm with controlled
thickness.
Silicon is selectively doped
in the region where stress is
greatest.
Difference of pressure
across the diaphragm will
cause stress concentration.
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Chang Liu
UIUC
Stress Analysis and Sensor Placement
displacement Stress
4w 4w 4w p
2 2 2 4
x 4 x y y D
Differential eq.
For displacement.
2mx 2ny
w amn 1 cos 1 cos
m 1 n 1 a b
4 2t E
2 2mx 2ny 2mx 2ny
x ( x, y ) 2
a 1 2
m 1 n 1
a mn
m cos(
a
) n 2
cos(
a
) ( m 2
n 2
) cos(
a
)(
a
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Chang Liu
UIUC
Pressure Sensor Based On Polysilicon
Sensors placed on edges (highest tensile stress) and center
(highest compressive stress).
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UIUC
Fabrication Process
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Fabrication Process (Continued)
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UIUC
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Piezoresistive Accelerometer
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UIUC
Condition for Mechanical Equilibrium
Tensile
Compressive
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UIUC
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Relationship between maximum stress and applied
force
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UIUC
Example 6.2
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UIUC
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UIUC
Good vs. Bad Designs
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Chang Liu
UIUC
When one tried to bend a cantilever beam, the failure always
occurs at the anchored end and the surface of the beam. Why?
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Chang Liu
UIUC
Comments on Mechanical Failure
Fatigue
If repeated cycle of force is applied to a mechanical member, with the
induced strain much lower than that of the fracture strain, the member
may failure after repeated cycles.
Mechanism: microscopic defects (bubbles, dislocations) amplifies
over time and causes stress concentration (re-distribution of stress).
The defects are often hidden underneath the surface of the material.
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Chang Liu
UIUC
Stress-Strain Curve
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Chang Liu
UIUC
Case 6.1: Analysis of Accelerometer
Acceleration induced force F, F=ma.
The force induces stress at the fixed end of the cantilever beam.
The stress is detected by chance in resistance.
Assumptions
assume entire resistance is
concentrated at the
anchor;
for moment of inertia at
the end, ignore the
thickness of the resistor.
Assume the stress on the
resistor is the maximum
value.
The proof mass is rigid. It
does not bend because of
the significant thickness
and width.
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Chang Liu
UIUC
Analysis of Sensitivity
Under a given a, the force has a magnitude F m a
L
The moment applied at the fixed end of the beam is M F (l )
2
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Chang Liu
UIUC
Stress state analysis example
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Chang Liu
UIUC