EE 230: Optical Fiber Communication Lecture 9: Light Sources
EE 230: Optical Fiber Communication Lecture 9: Light Sources
EE 230: Optical Fiber Communication Lecture 9: Light Sources
Light Sources
Reflectivity
n 1
R
n 1
2nL
2
Laser contact
resistance
Laser Pad
Capacitance
(Hitachi)
dN
J
N
b( N N )
dt
2de
N
d
fs N
b N N
dt
P N
Turn-on delay
J Jb
t d N ln
J
J
th
Ip
Input Current
Output Light Signal
Turn-on Delay
Ib=0
Ib=0.5Ith
Ib=0.9Ith
Ip
d th ln
I p Ith
Ip
I p Ib Ith
d th ln
Relaxation oscillation
Decays as e-t/2, where
1
b
N
and with a freqency , where
b N th N
J J th
P N J th
Modulation frequency
Difference between optical output at
modulation frequency m and steady-state
output is proportional to
1
2
r
2 2
m
Resonance Frequency
Laser Small Signal Frequency Response=
f02
Photon Density
s(f ) s(0)
where
f0
fd
1
2 p estim
gS
1
p
2
g
I Ith =Resonance frequency
p
S
=Damping frequency
2 p
fp= f02
fd2
=Frequency of peak response
4
g=differential gain
S= I Ith
Semiconductor lasers
exhibit an inherent second
order response due to energy
sloshing back-and-forth
between excited electrons
and photons
1
gS
Quantum efficiency
Internal quantum efficiency i, photons
emitted per recombination event,
determined empirically to be 0.650.05
for diode lasers
External quantum efficiency e given by
i g th
e
g th
Chirping
Current modulation causes both intensity and frequency modulation(chirp)
As the electron density changes the gain (imaginary part of refractive index n i) and the real
part of the refractive index (nr) both change.
The susceptability of a laser to chirping is characterized by the alpha parameter.
n r
N whereNistheelectrondensity.Largeimplieslotsofchirping.
n i
N
P / t
v
f
v(t )
P
j
forP= P 0 Pe j t
4 P
P
2P0
1-3 is expected for only the very best lasers
Chirping gets worse at high frequencies
Relaxation oscillations will produce large dp/dt which leads to large chirping
Damping of relaxation oscillations will reduce chirp
Correctly adjusting the material composition and laser mode volume can reduce
Reflection Sensitivity
Problem
Solution
Example
A GaInAs diode laser has the following
properties:
Peak wavelength: 1.5337 m
Spacing between peaks: 1.787x10 -3 m
J/Jth=1.2
What are the turn-on delay time, the
cavity length, the threshold electron
density, and the threshold current?
J Jb
t d N ln
J J th
=3.7 ln(1.2/1.2-1) = 6.63 ns
Cavity length
2nL
2
L = (1.5337)2/(2)(3.56)(1.787x10-3)
= 184.9 m
n 1
R = 0.3152
g(1/L)ln(1/R)+
gth=1/.01849 ln(1/.3152)+100=162.4 cm-1
From figure, N=1.8x1018 cm-3
Threshold current
dN
J
N
b( N N )
dt
2de
N
J/2de = I/2deLW
Ith=(0.5x10-4)(1.6x10-19)(1.8x1018)(.01849)(4x10-4)/(3.7x10-9)
Ith=29 mA
P P0 e
t / D
Average
Power
Light
Light
Average
Power
Current
Current
Light
Data
Average
Power
Current
L-I Characteristic with temperature
dependent threshold and decreased
quantum efficiency
Vref
-5V
m 1 / 2
B
2nL
2
B
VCSELs
Much shorter cavity length (20x)
Spacing between longitudinal modes
therefore larger by that factor, only one
is active over gain bandwidth of medium
Mirror reflectivity must be higher
Much easier to fabricate
Drive current is higher
Ideal for laser arrays