Semiconductor Optical Amplifiers in Avionics: C Michie, W Johnstone, I Andonovic, E Murphy, H White, A Kelly

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Semiconductor Optical Amplifiers

in Avionics

C Michie, W Johnstone , I Andonovic , E Murphy ,


H White, A Kelly

Semiconductor Optical Amplifiers


in Avionics
Significant advantages within Avionics context from
use of optical communications networks
bandwidth, EMI, significant weight savings

Current systems limited to point to point, multimode


This work
Learn from terrestrial communications using COTS
Focus on PONs cost is critical
Strategies towards WDM minimal component inventory

Key operational consideration


Extended temperature range

Long Haul; DWDM systems maximise


fibre bandwidth usage
TX 1
TX 2
TX X
TX X
TX X
TX X
TXN

40 wavelengths, 200 GHz spacing


10,40, 100+ Gbit/channel

Long Haul; DWDM systems maximise


fibre bandwidth usage
Wavelength specific transmitters
single wavelength, DFB
Temperature regulated

Many wavelengths

inventory issues for Avionic system

Temperature Control

increased power consumption

Expensive for Avionics


not a flier!

Passive Optical Networks

High bandwidth Access solutions


Cost is critical minimise number of components
Minimise manufacturing specification
Operate without cooling if possible

Reflective Semiconductor Based Optical Amplifiers


RSOA transmitter and amplifier using same component

RSOAs as transmitters

BLS

User end

CS- RSOA

RSOAs as transmitters
P

CS-RSOA

CS-RSOA
P

CS-RSOA

Broad Band
BLS
Source
CS-RSOA

User

Avionics Link
Simple link
500 m, 1 Gbit/s

Single Broad band seed source


might need two ?

Multiplexer, de-multiplexer
Minimal cooling/heating

BLS

0.6 dB

0.8 dB

3.5 dB

0.6 dB

Rx
Rx
Rx

Tx RSOA

Rx

Tx RSOA
Tx RSOA

Fibre Link

Tx RSOA
Tx RSOA

Tx RSOA

Tx RSOA

Rx

Tx RSOA

Rx
Rx
Rx

Fibre Link

RSOA Design
InP:InGaAsP
Buried Heterostructure
Lateral Waveguide Tapers
Tensile Bulk
High back refectivity 0.88
Front facet AR coated

RSOA in TO

TO-packaged S-band RSOA parametric


tests

Standard tests at 25C and 80mA

Dynamic Range
Psat ~ 5 dBm, Gain > 20 dB
so we need -15 dBm input to saturate
Can get 0dBm/nm from COTS sources
-5 dBm/nm is obtainable with lower power module
NB the above module needs to be cooled but it should be
the only component within the system
To get 12 dB dynamic range (allows 3dB plus of margin) we
can allow gain/Psat drop with temperature

RSOA modulation experiments

TO packaged devices on ETS evaluation board


50mA DC bias, 60mA modulation
S band RSOA, CW injection at 1465 1530nm
Stage temperature 25C
Modulation at 1.25 Gbps data rate with 211-1 PRBS bit pattern
The Rx - APD photoreceiver with limiting amplifier

Sensitivity, Output Power, Gain and Path Loss


Capability at 1490nm and 25C

~30dB return path loss capability at -20dBm input

Sensitivity, Output Power, Gain and Path Loss


Capability at 1580nm and 25C

Sensitivity, Output Power, Gain and PLC


versus Wavelength at 25C

-20dBm CW input power and 25C stage temperature


Eye diagram at 1490nm

S, C and L band performance


Sensitivity(dBm),Pout(dBm),
PLC(dB),Gain(dB)

40

S-band device

C-band device
Sens
Pout
Gain
PLC

30
20
10
0
-10
-20
-30
-40
1440

1460

1480

1500

1520

1540

1560

Wavelength (nm)

1580

1600

1620

1640

RSOA with Broadband light source

Path Loss Capability TLS, BlS

High Temperature RSOA Design


AlInGaAs
Ridge Waveguide
Single Polarisation
High back refectivity 0.88
Front facet AR coated 0.01%

RSOA in TO

Temperature Performance of RSOA


Tuneable
Laser

Variable
Attenuator

RSOA
Temperature
Controlled
Mount

Optical
Spectrum
Analyser

Evaluate Gain, NF, Psat


as a function of temperature.
Enables prediction of performance
(Power budget for BER 10-9)

Packaged BH Temperature
Characterisation

Chip on Carrier
Ridge Temperature Characterisation

Temperature Characterisation

Conclusions
WDM PONs enabled by RSOAs

TO packaged polarisation insensitive S band RSOA


~1dB penalty at 1.25Gbit/s compared to commercial M-Z
modulator

High Temperature Operation


AlInGaAs active region

Ridge waveguide design due to oxidation


Single polarisation
Potential to increase operating temperature to > 70 C
Much reduced cooling requirement

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