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    Microwave Solid State Device

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    Amit Shankar Choudhary
    Microwave devices face two main problems: stray capacitance/inductance and transit time. Interdigital design and using gallium arsenide instead of silicon help remedy these issues. Common microwave transistors include GaAsFETs and HEMTs. Other microwave devices include Gunn diodes, pin diodes, varactor diodes, and microwave tubes. Microwave antennas include horn antennas of various shapes like pyramidal and conical as well as slot antennas.

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    Microwave Solid State Device

    Uploaded by

    Amit Shankar Choudhary
    370 views18 pages
    Microwave devices face two main problems: stray capacitance/inductance and transit time. Interdigital design and using gallium arsenide instead of silicon help remedy these issues. Common microwave transistors include GaAsFETs and HEMTs. Other microwave devices include Gunn diodes, pin diodes, varactor diodes, and microwave tubes. Microwave antennas include horn antennas of various shapes like pyramidal and conical as well as slot antennas.

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    Microwave devices face two main problems: stray capacitance/inductance and transit time. Interdigital design and using gallium arsenide instead of silicon help remedy these issues. Common microwave transistors include GaAsFETs and HEMTs. Other microwave devices include Gunn diodes, pin diodes, varactor diodes, and microwave tubes. Microwave antennas include horn antennas of various shapes like pyramidal and conical as well as slot antennas.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PPTX, PDF, TXT or read online from Scribd
    Download as pptx, pdf, or txt
    370 views18 pages

    Microwave Solid State Device

    Uploaded by

    Amit Shankar Choudhary
    Microwave devices face two main problems: stray capacitance/inductance and transit time. Interdigital design and using gallium arsenide instead of silicon help remedy these issues. Common microwave transistors include GaAsFETs and HEMTs. Other microwave devices include Gunn diodes, pin diodes, varactor diodes, and microwave tubes. Microwave antennas include horn antennas of various shapes like pyramidal and conical as well as slot antennas.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PPTX, PDF, TXT or read online from Scribd
    Download as pptx, pdf, or txt
    of 18

    Microwave Devices

    By:
    Amit Shankar
    Choudhary
    B.Tech (Electronics & Communication)
    PGDM (Finance & Operation)
    Microwave Solid State Devices

     Two problems with conventional transistors at


    higher frequencies are:
     1. Stray capacitance and inductance.
     - remedy is interdigital design.
     2.Transit time.

    - free electrons move quicker than
    holes therefore change from silicon to Gallium
    Arsenide

    Microwave Transistors
     Conventional bipolar transistors are not
    suitable for microwave frequencies.
     Electrons move faster than holes.
     Component leads introduce elevated
    reactance.
     XL increases and XC decreases therefore
    collector feedback becomes worse as
    frequency increases.
     Transit time and mobility of carriers. As
    transit time approaches signal period
    phase shifts occur.

    Microwave Transistors
     REMEDIES:

    ØInterdigital design of emitter and base


    minimizes capacitances.
    ØGallium arsenide. Faster than silicon.
    ØN type GaAsFET. Why N type?
    ØFlat component leads.

    Ø
    Microwave Transistors
     REMEDIES contd.:
    Ø Low noise design considerations:
     * Planar and epitaxial methods of
    construction use diffusion and surface passivation
    to protect surfaces from contamination as
    opposed to diffusion method of mesa structure
    implementing acid etching.

    * Shot noise is proportional to the square of
    current therefore operate at moderate Ic.

    * Thermal noise is reduced at lower power
    levels. With interdigital base design Rb is low
    therefore lower voltage drop and less power.
    Gunn Devices
     Uses phase shift to minimize transmit time.
     Transferred-electron device (TED).
     N type GaAs – electron mobility decreases
    as electric field strength increases.
     Characterized by a negative resistance
    region.
     A domain is developed that sustains
    oscillations as a voltage is applied to the
    substrate of GaAS.
     A pulse current develops as domain of
    charge travels to the positive terminal.
    Other Devices
     Pin Diodes - R.B.(R II C) F.B. (variable R)
     Varactor Diodes – R.B. (variable junction
    capacitance)
     YIG Yitrium-Iron-Garnet Devices
     Dielectric Resonators
     MMICs – monolithic microwave integrated
    circuits

    HEMT
     High Electron Mobility Transistor
     Similar to GaAsFET construction.
     Difference is that motion of charge carriers is
    confined to a thin sheet within a GaAs buffer
    layer.
     GaAs/AlGaAs heterostructure epitaxy.
     The thickness of the channel remains constant
    while the number of carriers is modulated by
    the gate bias as opposed to a MESFET that
    modulates the channel thickness.
     PHEMT- pseudomorphic HEMT used above 20 GHz
    (mm wave)
    Microwave Tubes
     Magnetrons
     Klystrons
     Travelling-Wave Tube
    Microwave Horn Antennas

    E-plane
    H-plane

    Pyramidal

    Conical

    Slot

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