Gunn Diode Main

Gunn Diode
Transferred Electron Devices

(TED)
TEDs are semiconductor devices with no

junctions and gates.
They are fabricated from compound

semiconductors like GaAs, InP, CdTe etc.
TEDs operate with hot electrons whose

energy is much greater than the thermal
energy.
Gunn Diode
Invented by J.B Gunn
Gunn Effect:
Above some critical voltage (Corresponding
to Electric field of 2k-4k V/cm) the current
passing through n-type GaAs becomes a
periodic fluctuating function of time.
Frequency
of oscillation is determined
mainly by the specimen, not by the external
circuit.
Period of oscillation is inversely proportional
to the specimen length and is equal to the
transit time of electrons between the
electrodes
The current waveform was produced by

applying a voltage pulse of 16V and 10ns
duration to an n-type GaAs of 2.5 x 10-3 cm
length. The oscillation frequency was
4.5Ghz
RWH Theory
Explanation for Gunn Effect:

Ridley Watkins Hilsum (RWH) Theory
Two concepts related with RWH Theory.

Differential negative resistance
Two valley model
Differential negative
resistance
Fundamental concept of RWH Theory.
Developed in bulk solid state III-V compound
when a voltage is applied
Differential negative resistance make the

sample electrically unstable.
Two valley
model
theory
Data for two valleys in GaAs
Electron transfer
mechanism
Conductivity of n-type GaAs:
e = Electron charge
= Electron mobility
= Electron density in the lower valley
= Electron density in the upper valley
is the electron density
According to RWH theory, in order to exhibit

negative resistance the energy band
structure of semiconductor should satisfy
The energy difference between two valleys must
be several times larger than the thermal energy
(KT ~ 0.0259eV)
The energy difference between the valleys must
be smaller than the bandgap energy (Eg)
Electron in lower valley must have a higher
mobility and smaller effective mass than that of in
upper valley
Possessed by GaAs, InP, CdTe etc
Formation of high field

domain
In
GaAs,
at
electric
fields
exceeding
the
critical value of
Ec 3.2 kV/cm
the
differential
mobility is ve.
When the
exceeds Ec
further
increases,
electron
velocity
decreases.
field
and
the
drift
Modes of Operation
Gunn Oscillation Mode:

(f x L) = 107 cm/s and (n x L) > 1012 /cm2
Cyclic formation of High field domain
Stable Amplification Mode

(f x L) = 107 cm/s and 1011/cm2 < (n x L) >1012/cm2
LSA Oscillation Mode

(f x L) >107 cm/s and 2 x 104 < (n/f) > 2 X105/cm2
Bias-circuit
(f x L) is small. L is very small. When E=E th current
falls as Gunn oscillation begins, leads to oscillation in
bias circuit (1KHz to 100MHz)
Gunn Oscillation Mode
Condition for successful domain drift:

Transit time (L/vs) > Electric relaxation time
Frequency of oscillation = vdom/Lef.
Gunn diode with a resistive circuit -> Voltage

change across diode is constant-> Period of
oscillation is the time required for the domain to
drift from the cathode to anode. Not suitable for
microwave applications because of low efficiency.
Gunn diode with a resonant circuit has high
efficiency.
There are three domain modes for Gunn

oscillation modes.
1. Transit time domain mode, (Gunn mode)
2. Delayed domain mode
Here domain is collected while

New domain cannot form until E rises above
threshold again.
,
Also called inhibited mode.
Efficiency: 20%
3. Quenched domain mode:

If bias field drops below Es, domain collapses
before it reaches anode.
When the bias field swings above Eth, a new
domain starts and process repeats.
Frequency of oscillation is determined by resonant
circuit.
Efficiency : 13%
Limited Space charge Accumulation Mode

(LSA)
Most Important mode for Gunn oscillator.

Domain is not allowed to form.
Efficiency : 20%
Gunn Characteristics
Power: 1W (Between 4HHz and 16GHz)
Gain Bandwidth product : >10dB
Average gain : 1 12 dB
Noise figure : 15 dB
Applications of Gunn Diode

In radar transmitters
Air traffic control (ATC) and Industrial
Telemetry
Broadband linear amplifier
Fast combinational and sequential logic
circuit
Low and medium power oscillators in
microwave receivers
As pump sources
InP Diode
Peak to valley current

ratio

Gunn Diode Main

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Gunn Diode

Transferred Electron Devices

TEDs are semiconductor devices with no

They are fabricated from compound

TEDs operate with hot electrons whose

Invented by J.B Gunn

The current waveform was produced by

Explanation for Gunn Effect:

Two concepts related with RWH Theory.

Differential negative resistance make the

Data for two valleys in GaAs

Conductivity of n-type GaAs:

= Electron density in the lower valley

= Electron density in the upper valley

is the electron density

According to RWH theory, in order to exhibit

Possessed by GaAs, InP, CdTe etc

Formation of high field

Gunn Oscillation Mode:

Stable Amplification Mode

LSA Oscillation Mode

Gunn Oscillation Mode

Condition for successful domain drift:

Frequency of oscillation = vdom/Lef.

Gunn diode with a resistive circuit -> Voltage

There are three domain modes for Gunn

2. Delayed domain mode

Here domain is collected while

3. Quenched domain mode:

Limited Space charge Accumulation Mode

Most Important mode for Gunn oscillator.

Applications of Gunn Diode

Peak to valley current

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