EE-403 Optical Source
EE-403 Optical Source
EE-403 Optical Source
Optical Sources
Engr.Mujeeb Abdullah. [email protected] Lecturer ( Dep of Electrical Engineering)
OPTICAL SOURCES
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Optical Sources
A light-emitting diode (LED) is a semiconductor light source. LEDs are used as indicator lamps in many devices and are increasingly used for other lighting. Early LEDs emitted low-intensity red light, but modern versions are available across the visible. The LED consists of semiconducting material doped with impurities to create a p-n junction. As in other diodes, current flows easily from the p-side or anode, to the n-side or cathode, but not in the reverse direction. Charge-carrierselectrons and holesflow into the junction from electrodes with different voltages. When an electron meets a hole, it falls into a lower energy level, and releases energy in the form of a photon.
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Optical Sources
All light emitters are complex semiconductors that convert an electrical current in to light.
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Optical Sources
The conversion process is fairly efficient as it creates very little heat compared to the heat generated by incandescent lights.
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Optical Sources
LEDs and Laser diodes are of interest for fiber optic because of five inherent characteristics.
Optical Sources
Can be modulated at high speed LEDs are used as visible indicator in most electronics equipment. LASER diodes are most widely used in compact disk players.
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Energy can also be imparted to an atom by heat, Electrical force or by collision with other particles.
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Electron energy.
Electrons have different specific energy levels in which they move around the nucleus.
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When the electron is orbiting in the nucleus at its lower energy level E1 , it is said to be in its unexcited or ground state.
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E2
E5 E4 E3
r
E1
+
E3
E2 Ground state E1
Bohr model of the hydrogen atom showing permissible electron energy levels.
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When the stimulated electron drops directly back to its ground state, its called direct transition.
Indirect Transition.
When the electron returns to its ground state in two or more steps, its called indirect transition.
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E5 E4
E3
Excited state
E2
l =122nm
E1
E5 E4
E3
Excited state
l =122nm
E2
E1
Direct transition
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E5 E4 E3
Excited state
E2
l =103nm (UV)
E1
E5 E4
E3
Excited state
E2
E1
Indirect transition
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Semiconductor Material
Semiconductors
Conduction properties lie between conductor and insulator Conduction properties can be described by Energy Bands At low temperature conduction band is completely empty By raising the temperature, electron exited across the band gap.
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Best Light source for bit rates less than approx 100 200 Mb/s and multimode fiber. LED is a solid-state component and has nearly unlimited life expectancy.
It is physically more sturdy than its glass-encapsulated predecessors and requires far less operating power.
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LED Operation
LED is a PN junction diode that emits light through the recombination of electrons and holes when current is forced through its junction.
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LED Operation
Emitted Photon Recombined electron and hole
- + - + - +
Emitted Photon
- + - +
- + - + - +
+ + + +
+ + + +
+ + + +
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P-n junction
Electrical Contacts
A typical LED needs a p-n junction There are a lot of electrons and holes at the junction due to excitations Electrons from n need to be injected to p to promote recombination Junction is biased to produce even more e-h and to inject electrons from n to p for recombination to happen
Electrons in CB
Holes in VB
Ideal LED will have all injection electrons to take part in the recombination process In real device not all electron will recombine with holes to radiate light Sometimes recombination occurs but no light is being emitted (non-radiative) Efficiency of the device therefore can be described Efficiency is the rate of photon emission over the rate of supply electrons
Calculate
If GaAs has Eg = 1.43ev What is the wavelength, lg it emits? What colour corresponds to the wavelength?
Wg hf
Wg h c
l c l h Wg
(6.1)
Now
Joseph C. Palais
32
p
n
Electrical contacts
Substrate
LED Construction
Efficient light emitter is also an efficient absorbers of radiation therefore, a shallow p-n junction required. Active materials (n and p) will be grown on a lattice matched substrate. The p-n junction will be forward biased with contacts made by metallisation to the upper and lower surfaces. Ought to leave the upper part clear so photon can escape. The silica provides passivation/device isolation and carrier confinement
Efficient LED
Need a p-n junction (preferably the same semiconductor material only different dopants) Recombination must occur Radiative transmission to give out the right coloured LED Right coloured LED hc/l = Ec-Ev = Eg so choose material with the right Eg Direct band gap semiconductors to allow efficient recombination All photons created must be able to leave the semiconductor Little or no reabsorption of photons
UV-ED l ~0.5-400nm
Eg > 3.25eV
LED - l ~450-650nm Eg = 3.1eV to 1.6eV IR-ED- l ~750nm- 1nm Eg = 1.65eV
Candidate Materials
Materials with refractive index that could allow light to get out Readily doped n or p-types
Visible LED
Definition: LED which could emit visible light, the band gap of the materials that we use must be in the region of visible wavelength = 390- 770nm. This coincides with the energy value of 3.18eV- 1.61eV which corresponds to colours as stated below:
Violet ~ 3.17eV Blue ~ 2.73eV Green ~ 2.52eV Yellow ~ 2.15eV Orange ~ 2.08eV Red ~ 1.62eV
The band gap, Eg that the semiconductor must posses to emit each light
LEDs are usually driven with either a digital signal or an analog signal. The key concern is driving the LED so that maximum speed is achieved.
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LED Structures
LED for optical used should have
High radiance out put
High quantum efficiency
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LED Structures
Radiance or brightness: It is a measure ,in watts, of the optical power radiated into a unit solid angle per unit area of emitting surface
Quantum efficiency: It is related to fraction of injected electron-hole pairs that recombine radiatively.
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LED Structures
Charge carrier confinement: It is used to achieve a high level of radiative recombination in the active region of the device.
Optical confinement:
It is used to prevent absorption of the emitted radiation by the material surrounding the pn junction
*By confining the charge carrier and optical emission high radiance and high quantum efficiency can be achieved
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LED Structures
To achieve carrier and optical confinement double heterostructure of two different alloy layers on each side of active region is used.
The band gap differences of adjacent layers confine the charge carriers, while the difference in the indices of refraction of adjoining layers confine the optical field to the central active region.
This dual confinement leads to both high efficiency and high radiance.
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LED Structures
Two different alloy layers on each side of the active region Recombination region is maximum confined to 0.3 um. Two LED configuration
Surface emitter
Edge emitter
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Double-heterostructure configuration
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Surface-emitting LED
Emitting region is perpendicular to the axis of the fiber The circular active area in practical surface emitters is normally 50 um in diameter and up
to 2.5 um thick.
The emission pattern is essentially isotropic with a 120 half power beam width.
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Surface-Emitting LEDs
The surface-emitting LED (S-LED) emits light over a vary wide angle. This type of light source is often called a Lambertian emitter, because of the nature of the emission pattern
This broad emission angle is attractive for use as an indicating LED, therefore it is difficult to focus more than a small amount of the total light output in the fiber.
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Surface-Emitting LEDs
The key advantage of surface-emitting LEDs is their low cost, making these light emitters the dominant type in use.
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High radiance surface emitting LED. The active region is limited to a circular section having an area compatible with the fiber core end face
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Edge-Emitting LEDs
This type has a much narrower angle of light emission and also has a smaller emitting area. This allows a larger percentage total light output to be focused into the fiber core.
The disadvantage of E-LEDs is that they are very temperature sensitive compared to S-LEDs.
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Light-emission cone
Only light falling within a cone defined by the critical angle will be emitted from an optical source.
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Some LED and Laser Diode Material Mixtures and their Characteristics
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Quantum Efficiency
The active region of an ideal LED emits one photon for every electron injected.
Each charge quantum-particle (electron) produces one light quantum-particle (photon). Thus the ideal active region of an LED has a quantum efficiency of unity.
The internal quantum efficiency is defined int =
number of photons emitted from active region per second number of electrons injected into LED per second
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Quantum Efficiency
The external quantum efficiency is defined as
number of photons emitted into free space per second number of electrons injected into LED per second
ext =
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Coupling light output to a fibre is the most difficult and costly part of manufacturing a real LED or laser device
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Laser Diodes
LASER is an acronym of Light Amplification Stimulated Emission Radiations. by of
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Advantages:
Ideal laser light is single-wavelength only. This is not exactly true for communication lasers. Lasers can be modulated (controlled) very precisely. Lasers can produce relatively high power. Indeed some types of laser can produce kilowatts of power. In communication applications, semiconductor lasers of power up to about 20 milli watts are available Because laser light is produced in parallel beams, a high percentage (50% to 80%) can be transferred into the fibre.
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Disadvantages:
Lasers have been quite expensive by comparison with LEDs. Reason: Temperature control and output power control is needed. The wavelength that a laser produces is a characteristic of the material used to build it and of its physical construction. Lasers have to be individually designed for each wavelength they are going to use. Amplitude modulation using an analogue signal is difficult with most lasers because laser output signal power is generally non-linear with input signal power
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Monochromatic
Coherent
Collimated
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Properties of LASER
Monochromatic
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Properties of LASER
Coherent
It means all waves vibrate in step, there by constructively reinforcing each adjacent wave.
A. =
Coherent light Constructive interference
B.
Incoherent light
=
Destructive interference
OPTICAL INTERFERENCE
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Properties of LASER
Collimated
Source
Source
Target area
B
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2. Spontaneous emission
3. Stimulated emission
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LASER Principles
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When an electron is in this semi-stable (metastable) high energy state it can be stimulated by the presence of a photon of light to emit its energy in the form of another photon.
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Stimulated emission
**It is of fundamental importance to understand that
when stimulated emission takes place the emitted photon has exactly the same wavelength, phase and
**The photon that triggered (stimulated) the emission itself is not absorbed and continues along its original path accompanied by the newly emitted
photon.
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LASER Principles
Photon absorption
E2
E1
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LASER Principles
Absorption
E5 E4 E3
Excited state
E2
l =122nm
E1
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LASER Principles
Spontaneous emission
E2
E1
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E5 E4 E3
Excited state
l =122nm
E2
E1
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LASER Principles
Stimulated emission
E2
E1
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E5 E4 E3
Excited state
l =122nm
E2
E1
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Population Inversion
Under normal conditions, the population of unexcited atoms greatly exceeds the population of excited atoms.
This result, predominance of the spontaneous emission and the resulting radiation is largely incoherent.
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Population Inversion
For a LASER to operate, situation must be reversed, called population inversion. Once the majority of the atoms in a material are in an excited state, stimulated emission will be greater than spontaneous.
Population inversion is achieved by various Pumping techniques.
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Energy Pumping
Energy Pumping
The energy population in a Lasing medium is inverted by a method known as energy pumping. Energy can be pumped, into a material in a number of ways, depending upon the composition of the material Optical pumping.
Electronic pumping.
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The amount of reflectivity needed in the end mirrors is a function of the amount of gain in the cavity.
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Fabry-Perot LASER Diode Radiation is generated by the cavity Cavity size is very small like 250-500 Um long, 5-15 um wide and 0.1 to 0.2 um thick Reflecting mirrors are used at both sides of the cavity Mirrors provide strong feedback to the cavity to have the mechanism The side of the cavity are formed by roughening the edges to reduce unwanted emission
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Fabry-Perot resonator cavity for a laser diode. The cleaved crystal ends function as partially reflection mirrors. The unused end ( the rear facet) can be coated with dielectric reflector to reduce optical loss in the cavity. Note that the light beam emerging from the laser forms a vertical ellipse, even though the lasing spot at the active-area facet is a horizontal ellipse.
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DFB LASERs offer better performance, less noise and also higher cost than FP. They are nearly monochromatic. DFB LASERs are used for high speed digital application and for most anloge application because of their faster speed, low noise and superior linearity. Lasing is achieved from the Bragg reflectors (gratings) along the length of the diode
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DFB laser
Relationship between optical power and laser diode drive current. Below the lasing threshold the optical output is a spontaneous LED-type emission.
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VCSELs dont use monitor photodiode as they emit their light in a vertical plane perpendicular to the semiconductor wafer. Dramatically reduce the cost of LASERs to near those of LEDs
Available @ 850 nm
VCSELs are manufactured in such a way that they are ideal for application requiring arrays of devices.
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Two types:
1. Direct Modulation 2. External Modulation For Data rates of less than approximately 10 Gb/s (Typically 2.5 Gb/s), the process of imposing information on a laser-emitted light stream can be realized by direct modulation. For higher data rates external modulator is used to temporally modify a steady optical power level emitted by the laser.
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Modulation methods
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Threshold current
Total current
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External Modulation Directly modulated lasers can not operate smoothly at data rates greater than 2.5 Gbps. It is suitable to use external modulators above this data rate.
1.Electrooptical modulator
The electrooptical (EO) modulator typically is made of lithium niobate (LbNiO3). 1. Light beam is split in half 2. A high-speed electric signal then changes the
2. Electroabsorption modulator
The electroabsorption modulator (EAM) typically is constructed from indium phosphide (InP).
It operates by having an electric signal change the transmission properties of the material in the light path to make it either transparent during a 1 pulse or opaque during a 0 pulse
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Bias Current
Pcw
P (t)
Phase
CW
Input Light
Shifter
Beam
Splitter
Beam
Combiner
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Temperature Effects
Threshold current Ith (T) of laser diode also depends on the temperature. This parameter increases with temperature in all types of semiconductor lasers. So, output optical power can be stabilized in two ways: 1. Controlling dc-bias current level. 2. Controlling temperature level. Adjustment in the dc-bias (varies with temperature) current level is necessary for constant optical power level. One possible method for achieving this automatically is an optical feedback scheme.
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Temperature Effects
Optical feedback can be carried out by using a photodetector either to sense the variation in optical power emitted from the rear facet of the laser or to tap off and monitor a small portion of the fiber-coupled power emitted from the front facet. The Photodetector compares the optical power with a reference level and adjusts the dc-bias current level automatically to maintain a constant peak light output relative to the reference. Another standard method of stabilizing the optical output of a laser diode is to use a miniature thermoelectric cooler.
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Temperature dependence
Temperature-dependent behavior of the optical output power as a function of the bias current for a particular laser diode.
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Construction of a laser transmitter that uses a rear-facet photodiode for output monitoring and a thermoelectric cooler for temperature stabilization
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High-performance optical transmitter containing a DFB laser, a fiber mounting block, a thermoelectric cooler, and a monitoring photodiode.
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