crystals

Article
Design, Simulation, and Analysis of Optical Microring
Resonators in Lithium Tantalate on Insulator
Siyang Yao 1 , Huangpu Han 2,3 , Shangen Jiang 1 , Bingxi Xiang 1, * , Guangyue Chai 1 and Shuangchen Ruan 1

1 College of New Materials and New Energies, Shenzhen Technology University, Shenzhen 518118, China;
[email protected] (S.Y.); [email protected] (S.J.);
[email protected] (G.C.); [email protected] (S.R.)
2 School of Mechanical Engineering, Zibo Vocational Institute, Zibo 255314, China; [email protected]
3 School of Physics, Shandong University, Jinan 250100, China
* Correspondence: [email protected]; Tel.: +86-135-3085-0236

Abstract: In this paper we design, simulate, and analyze single-mode microring resonators in thin
films of z-cut lithium tantalate. They operate at wavelengths that are approximately equal to 1.55 µm.
The single-mode conditions and transmission losses of lithium tantalate waveguides are simulated
for different geometric parameters and silica thicknesses. An analysis is presented on the quality
factor and free spectral range of the microring resonators in lithium tantalate at contrasting radii and
gap sizes. The electro-optical modulation performance is analyzed for microring resonators with a
radius of 20 µm. Since they have important practical applications, the filtering characteristics of the
microring resonators that contain two straight waveguides are analyzed. This work enhances the
knowledge of lithium tantalate microring structures and offers guidance on the salient parameters





 for the fabrication of highly efficient multifunctional photonic integrated devices, such as tunable
filters and modulators.
Citation: Yao, S.; Han, H.; Jiang, S.;
Xiang, B.; Chai, G.; Ruan, S. Design,
Keywords: microring resonator; varFDTD; lithium tantalate thin film; electro-optical devices
Simulation, and Analysis of Optical
Microring Resonators in Lithium
Tantalate on Insulator. Crystals 2021,
11, 480. https://doi.org/10.3390/
cryst11050480 1. Introduction
An essential component in the construction of high-density photonic integrated cir-
Academic Editors: Gábor Corradi and cuits is an optical microring resonator. This is due to its compact size, simple structure and
Alessandro Chiasera outstanding wavelength-selective properties [1–3]. Such a component consists of a bus
waveguide that couples to a micrometer-size ring resonator via an evanescent field. The
Received: 18 March 2021
characteristic frequency spectrum of the microring, which is dependent upon its size, is a
Accepted: 24 April 2021
defining factor in the transmission of a selected wavelength of light into another waveg-
Published: 25 April 2021
uide. The microring resonators are widely employed in the design and manufacture of
optical filters [4–6], modulators [7,8], optical switches [9,10], optical delay lines [11], and
Publisher’s Note: MDPI stays neutral
Kerr frequency combs [12–15], etc. Multiple material systems have been used to fabricate
with regard to jurisdictional claims in
microring resonators, such as silicon on insulator (SOI) [1,16–18], silicon nitride (SiN) [5,19],
published maps and institutional affil-
and lithium niobate on insulator (LNOI) [20–23].
iations.
As a material in microring resonators, lithium tantalate (LiTaO3 or simply LT) crys-
tals have much promise because of their superior electro-optical (EO, γ33 = 27.4 pm/V),
nonlinear optical, ferroelectric, and piezoelectric properties [24–28]. Moreover, compared
with LiNbO3 , LT crystals have a higher optical damage threshold (with a laser radiation
Copyright: © 2021 by the authors.
induced damage of 240 MW/cm2 ) [29]. This enables the crystal to be used in integrated
Licensee MDPI, Basel, Switzerland.
photonic chips, especially in high input power fields, such as broadband electro-optic
This article is an open access article
frequency comb generation. In fact, LT crystals are already widely employed in integrated
distributed under the terms and
photonics and surface acoustic wave (SAW) devices [26–29]. In recent years, lithium tan-
conditions of the Creative Commons
talate on insulator (LTOI) is increasingly favored as the material of choice for integrated
Attribution (CC BY) license (https://
creativecommons.org/licenses/by/
electro-optic and SAW devices [30–32]. This is because of its high-index contrast—which
4.0/).
leads to a robust light guidance and a high-performance integrated device with a small

Crystals 2021, 11, 480. https://doi.org/10.3390/cryst11050480 https://www.mdpi.com/journal/crystals

 footprint—that is particularly suitable for microring resonators. Due to forma
high refractive index contrast between the ring core and the surrounding ma
small radius microring and a large free spectral range (FSR) are possible. LTOI a
the opportunity of electronically controlling the transmission spectrum, via the
Crystals 2021, 11, 480 2 of 9
EO effects of LT crystals that can enable extreme compactness and ultra-fast s
and modulation. Moreover, the integration of lithium tantalate thin films onto sil
strates enables LTOI to be compatible with a complementary metal-oxide-semico
footprint—that is particularly suitable for microring resonators. Due to formation of a
(CMOS);
high this
refractive could
index leadbetween
contrast to significantly decreased
the ring core research costs
and the surrounding andaan
materials, smallextensive
in production
radius microring and [30]. However,
a large to our
free spectral knowledge,
range microring
(FSR) are possible. LTOIresonators
also offers thein LTOI
been reported
opportunity elsewherecontrolling
of electronically in the literature.
the transmission spectrum, via the efficient EO
effects In
of LT crystals that can enable
this paper, we present the design, extreme compactness and ultra-fast
simulation switching
and analysis ofanda single-m
modulation. Moreover, the integration of lithium tantalate thin films onto silicon substrates
croring resonator that is based on LTOI. By use of a full-vectorial finite difference
enables LTOI to be compatible with a complementary metal-oxide-semiconductor (CMOS);
wecould
this offerlead
a study of the single-mode
to significantly conditions
decreased research and
costs and antransmission losses
extensive increase of LT wa
in pro-
that contains
duction different
[30]. However, geometric
to our knowledge, parameters and SiO2 cladding
microring resonators in LTOI havelayer
notthicknesses
been
reported
to obtainelsewhere
improved in thewavelength
literature. filtering effects, both the radius of the microring
theInsize
this paper, we present the design, simulation and analysis of a single-mode mi-
of the gap between the ring and linear waveguides have optimized valu
croring resonator that is based on LTOI. By use of a full-vectorial finite difference method,
we2.5-dimension
offer a study of thevariational
single-mode finite-difference time-domain
conditions and transmission (varFDTD)
losses of LT waveguides using Lu
MODE
that containssolutions software.
different geometric Such parameters
parameters havelayer
and SiO2 cladding direct effects Inonorder
thicknesses. the quali
to(known as the Q factor) and FSR. The electro-optic modulated microring re
obtain improved wavelength filtering effects, both the radius of the microring (R) and
the size of the gap between
which are significant inthe ring and
practical linear waveguides
applications, havedescribed.
are also optimized values in
the 2.5-dimension variational finite-difference time-domain (varFDTD) using Lumerical’s
MODE solutions software. Such parameters have direct effects on the quality factor (known
as2.the
Device Description
Q factor) and FSR. The electro-optic modulated microring resonators, which are
significant in practical applications,
From top to bottom, the are alsopresented
LTOI described. in this work contains a z-cut LT th
2.SiO 2 cladding layer, and a Si substrate. The research center of NANOLN Corpor
Device Description
example,
From top could easilytheperform
to bottom, such ainfabrication.
LTOI presented The schematic
this work contains for this
a z-cut LT thin film, micror
anator is shown
SiO2 cladding inand
layer, Figure 1. The optical
a Si substrate. device
The research consists
center of NANOLN of a ring resonator coup
Corporation,
straight
for example, waveguide
could easilychannel, botha fabrication.
perform such of which are Themade
schematicfrom forthe
thisz-cut LT thin fil
microring
resonator is shown in Figure 1. The optical device consists of a ring
optical signal is resonant within the ring, a coupling occurs from the channelresonator coupled to into
a straight waveguide channel, both of which are made from the z-cut LT thin film. If the
ity. To calculate the single-mode conditions, and the propagation losses of the L
optical signal is resonant within the ring, a coupling occurs from the channel into the cavity.
Toguides,
calculatea the
full-vectorial
single-mode finite-difference method is employed.
conditions, and the propagation losses of the LT Computation
waveguides, of the
aand FSR of the
full-vectorial simulationmethod
finite-difference is achieved with aComputation
is employed. varFDTD method that and
of the Q factor usesFSRperfectly
oflayers
the simulation is achieved with
(PML) boundary a varFDTD
conditions method
[33]. that uses perfectly
The varFDTD matched
is the direct layers
space and the t
(PML) boundary conditions [33]. The varFDTD is the direct space and the time solution for
tion for solving Maxwell’s equations in complex geometrical shapes. It is based on
solving Maxwell’s equations in complex geometrical shapes. It is based on collapsing a 3D
ing a 3Dinto
geometry geometry into aindices
a 2D effective 2D effective indices
set, which allowsset,
2D which
FDTD to allows
be used2DtoFDTD to be used
solve this
this problem.
problem. By performing
By performing Fourier results
Fourier transforms, transforms,
such as results
normalized such as normalized
transmission, far tran
field projection, and Poynting vector can be obtained [23].
far field projection, and Poynting vector can be obtained [23].

Figure
Figure 1. 1. Schematic
Schematic showing
showing the waveguide-coupled
the waveguide-coupled microringmicroring resonator
resonator on oncross-
LTOI. Inset: LTOI. Inset:
section
section of the
of the LT waveguide
LT waveguide structure.
structure.
11, x FOR PEER REVIEW 3 of 9

Crystals 2021, 11, 480 3 of 9

3. Results and Discussion
To prevent signal distortion during the transmission, single-mode conditions within
the waveguide are required. To achieve this necessity, a suitable waveguide thickness (h)
3. Results and Discussion
and width (w) are needed. The refractive indexes for the LiTaO3, the SiO2 cladding layer,
To prevent signal distortion during the transmission, single-mode conditions within
and the Si substrate at the simulation wavelength of 1.55 μm are shown in Table 1. As
the waveguide are required. To achieve this necessity, a suitable waveguide thickness (h)
shown in Figure and2a, via (w)
width a simulation
are needed. weThedetermine the curve
refractive indexes for theofLiTaO3,
the effective
the SiO2refractive
cladding layer,
index on changingand the waveguide
the Si substrate atthickness (using
the simulation a waveguide
wavelength width
of 1.55 µm areof shown
0.7 μminand op-
Table 1. As
erating at the wavelength λ = 1.55
shown in Figure μm).
2a, via The single-mode
a simulation we determineconditions
the curve ofofthe
the transverse
effective elec-
refractive index
on changing the waveguide thickness (using a waveguide width
tric (TE) and transverse magnetic (TM) modes are 0.77 μm and 0.78 μm, respectively. The of 0.7 µm and operating
thickness of theatLTthefilm
wavelength = 1.55
is set toλ 0.5 μmµm). The single-mode
to ensure conditionscondition
the single-mode of the transverse
in theelectric
simu-(TE)
and transverse magnetic (TM) modes are 0.77 µm and 0.78 µm, respectively. The thickness
lation. of the LT film is set to 0.5 µm to ensure the single-mode condition in the simulation.

Table 1. The refractive

Table 1.indexes for LiTaO
The refractive 3, SiO
indexes , and3Si
for 2LiTaO at 2λ, and
, SiO = 1.55
Si atμm.
λ = 1.55 µm.

Material Material LiTaOLiTaO

3 3 SiO2 SiO2 Si Si
no = 2.1189
no = 2.1189
Refractive index
Refractive index
ne = 2.1228 1.46 1.46 3.47 3.47
ne = 2.1228

Figure 2.Figure
Graphs2.showing
Graphsthe
showing
effectivethe effective
index index
of the TE of the
and TM TEmodes
light and TM
as a light modes
function of (a)as
theafilm
function of (a)
thickness the
with a
film thickness with a waveguide width of 0.7 μm and (b) the waveguide width with a film thick-
waveguide width of 0.7 µm and (b) the waveguide width with a film thickness of 0.5 µm in the LT waveguide. Both are
ness
calculated at λof
= 0.5
1.55μm
µm.in the LT waveguide. Both are calculated at λ = 1.55 μm.
In addition, the waveguide width also needs to be optimized. On setting the waveg-
In addition, thethickness
uide waveguide to itswidth
optimalalso needs
value of 0.5toµm,
be weoptimized.
calculate the Oneffective
setting refractive
the wave- index
guide thicknessastoa its optimal
function value
of the of 0.5
LT ridge μm, we width—as
waveguide calculate shown
the effective
in Figurerefractive
2b. For the index
LT ridge
as a function ofwaveguide,
the LT ridge waveguide
the first width—as
order TE and TM modes shown in Figure
first appear for the 2b.
LTFor the LT at
thicknesses ridge
0.92 µm
waveguide, the first order TE and TM modes first appear for the LT thicknesses at 0.92 of
and 0.97 µm, respectively. To guarantee the single-mode condition, a waveguide width
0.7 µm is chosen. This is because only the TM modes can employ the coefficient γ33 in a
μm and 0.97 μm, respectively. To guarantee the single-mode condition, a waveguide
z-cut LT crystal, the TM modes are calculated in the following calculation.
width of 0.7 μm is chosen. This is because only the TM modes can employ the coefficient
Since the thickness of the SiO2 layer (T) affects the transmission losses of the LT
γ33 in a z-cut LTwaveguides,
crystal, thewe TMsimulate
modes theseare calculated in the following
losses for different calculation.
layer thicknesses. The results are
Since the thickness
illustratedofinthe SiO3.
Figure 2 layer
They(T) affects
show thetransmission
that the transmission losses
losses of thewith
decrease LT wave-
increasing
thickness
guides, we simulate theseof losses
the SiOfor 2 layer. The Au
different films
layer in the LT-SiO
thicknesses. The2 -Au structure
results are used as the
are illustrated
in Figure 3. Theyelectrodes
show thatin the
theelectro-optic
transmission modulator. At the same
losses decrease withthickness
increasing of the SiO2 layer,
thickness of the
losses for a LT-SiO2 -Au structure (when the Au film thickness is 0.3 µm) are less than
the SiO2 layer. The Au films in the LT-SiO2-Au structure are used as the electrodes in the
those of LT-SiO2 -Si. This is because electromagnetic fields are more likely to leak into
electro-optic modulator. At the
the Si substrate same
(during thethickness of the since
light propagation) SiO2thelayer, the losses
refractive index offor a LT-
silicon (nSi ) is
SiO2-Au structure (whenamong
the highest the Au thefilm thickness
relevant materials. is Therefore,
0.3 μm) are less than
inclusion of thethose of LT-
gold film enables
SiO2-Si. This is greater
because isolation of the fields from
electromagnetic theare
fields surroundings
more likely and,
to thus,
leak theintoleakage
the Si of light is more
substrate
preventable. In addition, the waveguide light mode has contact
(during the light propagation) since the refractive index of silicon (nSi) is the highest with the Au films during
its propagation, which enables the excitation of the surface plasmons, and increases the
among the relevant materials. Therefore, inclusion of the gold film enables greater isola-
absorption losses. But in comparison to the leakage loss, the absorption loss is much lower.
tion of the fields from the surroundings and, thus, the leakage of light is more preventable.
In addition, the waveguide light mode has contact with the Au films during its propaga-
tion, which enables the excitation of the surface plasmons, and increases the absorption
losses. But in comparison to the leakage loss, the absorption loss is much lower. When the
21, 11, x FOR PEER REVIEW 4 of 9

Crystals 2021, 11, 480 4 of 9

Crystals 2021, 11,thickness
x FOR PEERof the SiO2
REVIEW layer is greater than 2 μm, the losses from the LT waveguide are 4 of 9
negligible. Therefore, the optimal value for the SiO2 layer thickness is set at 2 μm.

When the thickness of the SiO2 layer is greater than 2 µm, the losses from the LT waveguide
thickness of the SiO2 layer is greater than 2 μm, the losses from the LT waveguide are
are negligible. Therefore, the optimal value for the SiO2 layer thickness is set at 2 µm.
negligible. Therefore, the optimal value for the SiO2 layer thickness is set at 2 μm.

Figure 3. Graph showing the transmission loss of the LT waveguides with different thicknesses of
the SiO2 layer for TM light mode.
Figure3.3.Graph
Figure Graphshowing
showing the
the transmission
transmission loss
loss of
of the
the LT
LT waveguides
waveguides with
with different
different thicknesses
thicknesses of
of
theSiO
For our purposes,
the layer
SiO2 layer forTM
the for
key TM lightmode.
parameters
light mode. of the optical device are the radius of the mi-
2
croring and the gap between the ring and linear waveguides. These factors are used to
determine the Q factor Forand
For ourFSR
our of the the
purposes, the keykey parameters
microring parameters
resonators. ofofthetheoptical
We opticaldevice
calculate device areare
these thetheradius
parameters radius of the
of themi-
croring and
microringradii the
and the gap
gap between
between the ring and linear waveguides. These factors are used toto
are used
for differing microring and gap sizes, thewhileringoperating
and linear at around λ = 1.55factors μm. As
determine the Q factor and FSR of the microring resonators.
determine the Q factor and FSR of the microring resonators. We calculate these parameters We calculate these parameters
shown in Figure 4a, when the microring radius is lower than 10 μm, the Q factor becomes
fordiffering
for differingmicroring
microringradii radiiandandgap gapsizes,
sizes,whilewhileoperating
operatingatataround aroundλλ==1.55 1.55µm.μm.As As
rapidly enhanced withinincreasing
shown Figure4a, 4a,whenradiusthesize.
when However,
microring radius theis Q factor
lower than value
10µm,
μm,is essentially
theQQfactor
factorbecomes
becomes
shown in Figure the microring radius is lower than 10 the
unchanged when the radius
rapidly
rapidly enhanced
enhanced is greater
with than 20 radius
withincreasing
increasing μm.
radius The QHowever,
size.
size. factor is increased
However, theQQfactor
the factorwithvalue
value larger
isisessentially
essentially
gaps. The propagation
unchanged
unchanged losseswhen
when of the
the microrings
theradius
radiusisisgreater are caused
greater than20
than 20by μm.
µm. the following
The
The factorfactors:
QQfactor isisincreased(1) the
increased withlarger
with larger
electromagneticgaps.
fields
gaps. The
The leak into the losses
propagation
propagation Si substrate
losses ofthe
of when theare
themicrorings
microrings light
are propagates
caused
caused bythe
by throughfactors:
thefollowing
following the (1)
factors: (1)the
the
resonators (butelectromagnetic
lower than 2.5
electromagnetic fields × 10 −2
fields leak dB/cm
leak into with
intothe a SiO
theSiSisubstrate layer
substratewhen
2 thickness
whenthe thelight of 2 μm),
lightpropagates and
propagatesthrough (2)
throughthe the
resonators
the radiative losses within(but
resonators thelower
(but curved
lower than 2.5 ×
2.5
waveguide
than 10−2−2(which
× 10 dB/cm
dB/cm iswith
with a SiO
roughly
a SiO 82 layer −2thickness
× 10thickness
2 layer dB/cmof of
with 2aµm),
2 μm), and and(2)
−2 dB/cm
bending radius(2) ofthe
the 20 radiative
radiative losses
losses
μm). Additionally, within
within in the
the curved
curved
practice, waveguide
waveguide
the structures (which
(which will is roughly
is roughly
contain 10×
8 −2 10
8a×residual dB/cm with a
with
roughness for the a bending
bending
etching radius radius
surfaceof 20ofμm).of
the20waveguide
µm). Additionally,
Additionally, in practice,
which in practice,
causes the the structures
structures
scattering will contain
losses. will contain
When a residual a
residual
roughness roughness
for the for the
etching etching
surface surface
of the of the
waveguide
the radius is greater than 20 μm, the Q-factor may decrease as the radius increases due to waveguide
which which
causes causes scattering
scattering losses. losses.
When
When the radius is greater than 20the
µm, the Q-factordecrease may decrease as the as the radius increases
the existence of the radius
scattering isloss.
greater than 20
As shown μm,
in Figure Q-factor
4b, themay FSR for TM mode radius
reach aincreases
max- due to
due
the existence of scattering loss. As shown in Figure 4b, the FSR for TM mode reach areach
to the existence of scattering loss. As shown in Figure 4b, the FSR for TM mode max-
imum at a radius of 5 μm and
aimum
maximum
then it decreases
at a radius of and
5 µmthen
with increasing
anditthen it decreases
ring radius. Figure
with increasing
5 shows Figure 5
ring radius.
at a radius of 5 μm decreases with increasing ring radius. Figure 5 shows
the transmission spectrum
shows of a microring
the transmission spectrum withofaaradius
microring of 20 μma for
with radiusthe ofTM 20 mode.
µm for the TM mode.
the transmission spectrum of a microring with a radius of 20 μm for the TM mode.

Figure 4. Graphs for (a) the Q-factor of the microring resonators at different ring radii and gap
Figure 4.
Figure 4. Graphs forGraphs for (a)
(a) the sizes
Q-factorthe(b)Q-factor
andof the of theresonators
themicroring
microring
FSR at different atresonators
different
microring
ata different
ring
radii for radiilight
TM
ring
andmode radii
gap sizes and (b)
and
at around
gap
λ =the FSR
1.55 at
μm.
sizes and (b) the FSR at different microring radii for
different microring radii for a TM light mode at around λ = 1.55 µm. a TM light mode at around λ = 1.55 μm.
Crystals 2021,11,
Crystals2021, 11,480
x FOR PEER REVIEW 55 of
of9 9
Crystals 2021, 11, x FOR PEER REVIEW 5 of 9

Figure 5. Transmission spectrum of the microring with radius 20 μm for TM light mode.
Figure5.5.Transmission
Figure Transmissionspectrum
spectrumofofthe
themicroring
microringwith
withradius
radius2020µm
μmfor
forTM
TMlight
lightmode.
mode.

The
The characterization
Thecharacterization
characterization of of
thethe
of electronic
electronic
the tuning
electronic tuning
of the
tuning of the
the optical
ofoptical resonances
resonances
optical in
in the
the mi-
in the microring
resonances mi-
croring
resonators resonators is
is determined
croring resonators determined using
using optical
is determined optical transmission
transmission
using optical simulations.
simulations.
transmission As weAs
simulations. As we
have have
seen,seen,
we have the
seen,
the
the schematic
schematic
schematicof theof the
the electrode
of electrode
electrode structure
structure for for
structure thethe
for microring
microring
the microring resonator
resonator
resonator is is shown
showninin
isshown Figure
Figure1.1.
inFigure 1.
This
This depicts
depicts an
an LTLT microring
microring resonator
resonator that
that isis embedded
embedded within
within
This depicts an LT microring resonator that is embedded within a SiO2 layer, with the a aSiOSiO2
2 layer,
layer, with
with the
the
electrodes
electrodes positioned
electrodespositioned
positionedeithereither side
eitherside (above
side(above
(aboveand and below)
andbelow)
below)the the
theSiOSiO layer.
SiO2 22layer.
layer.TheThe tuning
Thetuning
tuningrangerange
rangeforfor
for
the
the microring
microring resonators
resonators is
is highly
highly dependent
dependent upon
upon the
the strength
strength
the microring resonators is highly dependent upon the strength of the EO effects. The ofofthetheEO EO effects.
effects. The
The
result
resultofof
result ofaaasimulation
simulation
simulationfor for the
forthe optical
theoptical field
fieldisis
opticalfield shown
showninin
isshown Figure
Figure6.6.
inFigure Here,
6.Here,
Here,the the
theLT LT waveguide
LTwaveguide
waveguide
has
has a thickness
hasaathickness of
thicknessofof0.5 0.5 μm, a
μm,aawidth
0.5µm, width of 0.7
widthofof0.7 μm,
μm,and
0.7µm, and a
anda aSiOSiO
SiO layer
2 2layer
2 thickness
layerthickness of
thicknessofof22µm. 2 μm.
μm.AsAs seen
Asseen
seen
in Figure
Figure 6, most of the optical power (TM mode) is confined within the electro-optic ac-
ininFigure 6,
6, most
most of the optical
optical power
power (TM
(TM mode)
mode) isisconfined
confined within
within the
theelectro-optic
electro-optic ac-
tive
tive material,
active material,i.e.,
material, i.e.,the
i.e., theLT
the LT core.
LT core. Electrodes
Electrodes can
Electrodes can be designed,
be designed,
designed, and and positioned
and positioned
positionedclose close
closetoto the
tothe
the
waveguides,
waveguides,
waveguides,that that circumvent
thatcircumvent substantially
circumventsubstantially larger
substantiallylarger optical
largeroptical transmission
opticaltransmission
transmissionlosses. losses.
losses.

Figure6.6.Diagram
Figure Diagramshowing
showingthe
theoptical
opticalfield
fieldinside
insidethe
thewaveguide.
waveguide.
Figure 6. Diagram showing the optical field inside the waveguide.
The variation of extraordinary refractive index of LT (∆ne ) after application of an
The
The variation
variation of extraordinary refractive
refractive index
index of of LT
LT (Δn
(Δnee)) after
after application
application of
of an
an elec-
electrostatic field is of extraordinary
expressed as: elec-
trostatic
trostatic field
field is
is expressed
expressed as:
as:
1 3
∆neΔ= −= −n11 γ33
Δne = − 2e nnee3γγ 33
3 E (1)
n zE (1)
33 Ez
e 2 z (1)
2
wherewhere ne is the
n extraordinary refractive index index
of LT. When the electrostatic field intensity,
where nee is
is the
the extraordinary
extraordinary refractive
refractive index of of LT.
LT. When
When the the electrostatic
electrostatic −field
field in-
in-
Etensity,
, is 1 V/µm, the variation in the refractive index at λ = 1.55 µm is ∆n = 1.3 ×e =101.34 .× 10−4
z E
tensity, Ez, is 1 V/μm, the variation in the refractive index at λ = 1.55 μm is Δne = 1.3 × 10−4..
z, is 1 V/μm, the variation in the refractive index at λ = 1.55 μm e is Δn
Observation
Observation of the EO effectrequires
requires anelectric
electric field to be applied between the
Observation of of the
the EO
EO effect
effect requires anan electric field
field to
to be
be applied
applied between
between the the elec-
elec-
electrodes.
trodes. Figure 7 shows the EO modulation characteristic spectra at different DC
trodes. Figure
Figure 77 shows
shows the
the EO
EO modulation
modulation characteristic
characteristic spectra
spectra atat different
different DC
DC voltages
voltages
voltages
(using a (using
TM a TMfor
mode) mode)
such for
a such a situation.
situation. A greater A greater resonance
resonance wavelength wavelength
shift is shift
exhibited
(using a TM mode) for such a situation. A greater resonance wavelength shift is exhibited
isforexhibited forelectricincreasing electric field strengths. In detail, the resonance wavelength
for increasing
increasing electric fieldfield strengths.
strengths. In In detail,
detail, the
the resonance
resonance wavelength
wavelength displacement
displacement is is
displacement
80 pm, 160 is
pm, 80 pm,
240 160
pm, pm,
and 240
320 pm,
pm and
when 320
the pm when
electric the
field electric
intensityfield
is intensity
set at is set2
11 V/μm,
80
atV/μm, pm, 160
1 V/µm, 2 V/µm,pm, 240 pm, and 320 pm
3 V/µm, respectively. when the electric
and 4 V/µm, respectively. field intensity is set at V/μm, 2
V/μm, 33 V/μm,V/μm, and and 44 V/μm,
V/μm, respectively.
Crystals 2021, 11, 480 6 of 9
Crystals 2021, 11, x FOR PEER REVIEW 6 of 9
Crystals 2021, 11, x FOR PEER REVIEW 6 of 9

Figure7. 7. Graph
Graph showingthe thewavelength
wavelengthshift
shiftofofthe
the transmissionspectrum
spectrumatatdifferent
different electric
Figure
Figure
field 7. Graphshowing
intensities. showing
In this theawavelength
case, TM mode shift
and a of thetransmission
microringtransmission
with a 20 spectrum
μm radiusatare used.
electric
different field
electric
intensities. In this case, a TM mode and a microring with a 20 µm radius are used.
field intensities. In this case, a TM mode and a microring with a 20 μm radius are used.
Tunable filtering
Tunable filtering isis an
an important
important application
application forfor the
the LT
LT microring
microring because
because itit isis an
an
Tunable filtering is an important application for the LT microring because it is an
attractive candidate for a narrower bandwidth integrated optical filter
attractive candidate for a narrower bandwidth integrated optical filter for the wavelength for the wavelength
attractive candidate for a narrower bandwidth integrated optical filter for the wavelength
division multiplexing
division multiplexing (WDM)(WDM) systems.
systems. Figure 88 shows
shows thethe transmission
transmission spectra
spectra for
forthe the
division multiplexing (WDM) systems. Figure 8 shows the transmission spectra for the
drop port
drop port of
of the
the LT
LTmicroring
microringfilters,
filters,at
atdifferent
differentelectric
electricfield
fieldintensities,
intensities,with
withaadouble
double
drop port of the LT microring filters, at different electric field intensities, with a double
straight waveguide
straight waveguidestructure.
structure. The The structure
structureof ofthe
themicroring
microringfilter
filterisisshown
shownin inthe
theinset
insetof of
straight waveguide structure. The structure of the microring filter is shown in the inset of
Figure8.8. The
Figure The resonance
resonancewavelength
wavelengthshiftshiftisis320
320pmpmininan
anelectric
electricfield
fieldintensity
intensityofof44V/µm.
V/μm.
Figure 8. The resonance wavelength shift is 320 pm in an electric field intensity of 4 V/μm.

Figure 8. Graph showing the transmission spectra for the drop port of the LT microring at differ-
Figure
Figure
ent 8.8.Graph
Graph
electric showingthe
field showing thetransmission
intensities. transmissionspectra
spectrafor
forthe
thedrop
dropport
portofofthe
theLT
LTmicroring
microringatatdifferent
differ-
ent electric field intensities.
electric field intensities.
Figure 9 shows the electrostatic field strength when a voltage of 1V is applied to the
Figure99shows
Figure showsthe theelectrostatic
electrostaticfield fieldstrength
strengthwhen whenaavoltage
voltage of1V 1Visisapplied
appliedtotothe the
electrodes. As we can see, the attainable electric field in the LT filmof is relatively weak; this
electrodes. As we can
electrodes. can see,
see, the
the attainable
attainable electric
electric field
field in in
thethe
LTLT film is relatively
film is relatively weak; this
weak;
is because the adjacent cladding materials exhibit a dielectric constant, ε, that is one order
is because
this is becausethe adjacent
the adjacent cladding materials exhibit a dielectric constant, ε, thatε, is oneisorder
of magnitude smaller, i.e., εcladding materials exhibit a dielectric constant,
SiO2 = 3.9 and εLT = 42.8 [34]. Hence, the electric field strength in
that one
of magnitude
order of magnitudesmaller, i.e., εSiO
smaller, 2 = 3.9
i.e., and
εSiO2 εLT =and
= 3.9 42.8εLT
[34]. Hence,
= 42.8 [34].theHence,
electricthefield strength
electric fieldin
the LT thin
strength film
in the LTis significantly smaller than the SiO 2 layer. The electrostatic field intensity
the LT thin film isthin film is significantly
significantly smaller than smaller than
the SiO the SiO
2 layer. 2 layer.
The The electrostatic
electrostatic field
field intensity
in the
intensity z-direction
in the (E z) is 0.033 V/μm when close to the center of the waveguide, for cases
z-direction (E ) is 0.033 V/µm when close to the center of the waveguide, for
in the z-direction (Ez) is 0.033 V/μm when close to the center of the waveguide, for cases
z
whenwhen
cases a voltage
a of 1Vof
voltage is 1Vapplied
is to theto
applied electrodes
the (for which
electrodes (for h = 0.5hμm,
which = 0.5wµm,
= 0.7wμm,= and
0.7 µm, T
when a voltage of 1V is applied to the electrodes (for which h = 0.5 μm, w = 0.7 μm, and T
=
and 2 μm). The
T = 2The problem
The problem of the relatively small
of the relatively E z field in the LT waveguides can be improved
Ezthe
= 2 μm). µm). problem of the relatively small Ezsmall
field in fieldLTinwaveguides
the LT waveguides can be
can be improved
by changing
improved by the geometry
changing the of the electrodes
geometry of the or by using
electrodes or by a x- ora x-
using y-cut
or configuration.
y-cut configuration.For
by changing the geometry of the electrodes or by using a x- or y-cut configuration. For
example,
For example,usingusingan incompletely etched waveguide structure (leaving a certain thickness
example, using anan incompletelyetched
incompletely etchedwaveguide
waveguidestructure
structure (leaving
(leaving aa certain
certainthickness
thickness
of slab
of slab across
across thethe chip)
chip) on on the
the x- x- or
or y-cut
y-cut LTOI
LTOIenables
enablesaarelatively
relativelystrong
strongelectric
electric field
of slab across the chip) on the x- or y-cut LTOI enables a relatively strong electricfield field
strength in the LT waveguide [35,36]. However, compared with the microrings on the z-
strength in the LT waveguide [35,36]. However, compared with the microrings on the z-
Crystals 2021, 11, 480 7 of 9
Crystals 2021, 11, x FOR PEER REVIEW 7 of 9

strength in the LT waveguide [35,36]. However, compared with the microrings on the z-cut
cut LTOI, the microrings on the x- or y-cut LTOI can apply an electric field to only part of
LTOI, the microrings on the x- or y-cut LTOI can apply an electric field to only part of
the microring, so the length of the effective electro-optic modulation is shorter [15,35,36].
the microring, so the length of the effective electro-optic modulation is shorter [15,35,36].
Assuming that there is a uniform electric field in the waveguide, and the electric field
Assuming that there is a uniform electric field in the waveguide, and the electric field
strength is equal to that at the center of the waveguide. The EO tunability of LTOI mi-
strength is equal to that at the center of the waveguide. The EO tunability of LTOI microring
iscroring is about
about 2.6 pm/V2.6 in pm/V in this
this work. work.
Table Table 2the
2 reports reports the comparison
comparison of the
of the results results of
of different
different
types types forand
for LiNbO LiNbO 3 and LiTaO3 tunable microrings. As we can infer from this table,
LiTaO
3 3 tunable microrings. As we can infer from this table, LTOI
LTOI photonics provides
photonics provides a promising a promising approach
approach for tunable
for tunable microring
microring resonators.
resonators. The ge-
The geometry
ometry of the electrodes, and the cavity-photon lifetime of the resonator, will
of the electrodes, and the cavity-photon lifetime of the resonator, will affect the modulation affect the
modulation rate of the microring [35,37,38]. Electrode design is especially
rate of the microring [35,37,38]. Electrode design is especially crucial for modulators, crucial for mod-
ulators, especially
especially for high for highmodulation
bit rate bit rate modulation
formats.formats. For example,
For example, a top electrode
a top electrode with
with a ring
a ring structure
structure can achieve
can achieve a relatively
a relatively high modulation
high modulation rate [37]. Arate [37]. A
further further
study study
of the of the
influence
ofinfluence of thegeometry
the electrode electrodeongeometry on the rate
the modulation modulation rate willin
will be provided befuture
provided
work.in future
work.

Figure9.9.Diagram
Figure Diagramshowing
showingthe
theelectrostatic field
electrostatic strength
field when
strength when a voltage is applied
a voltage to the
is applied electrodes.
to the elec-
trodes.
Table 2. Comparison between the different types of LiNbO3 and LiTaO3 tunable microrings.
Table 2. Comparison between the different types of LiNbO3 and LiTaO3 tunable microrings.
Material Mode EO Tuning (pm/V) Ref
Material Mode EO Tuning (pm/V) Ref
x-cut LNOI TE 2.4 [15]
x-cut LNOI TE 2.4 [15]
x-cut LNOI
x-cut LNOI TE
TE 77 [35]
[35]
y-cut
y-cut LNOILNOI TE
TE 0.32
0.32 [36]
[36]
z-cut
z-cut LNOI
LNOI TM
TM 33 [39]
[39]
z-cut LNOI TM 1.05 [20]
z-cut LNOI TM 1.05 [20]
z-cut LNOI TM 2.15 [40]
z-cut LNOI
z-cut LTOI TM
TM 2.15
2.6 [40] work
This
z-cut LTOI TM 2.6 This work
4. Conclusions
In this paper we design, simulate, and analyze a single-mode microring resonator
4. Conclusions
that In
is based on LTOI.
this paper The waveguide
we design, simulate, width and thea LT
and analyze film thickness
single-mode are optimized
microring resonator to
ensure
that single-mode
is based on LTOI.conditions. The propagation
The waveguide width and losses
the LToffilmthethickness
LT waveguides at different
are optimized to
SiO2 layer
ensure thicknessconditions.
single-mode are analyzedTheand discussed.losses
propagation The effects
of the onLT the Q factor and
waveguides the FSR
at different
SiO2 layer thickness are analyzed and discussed. The effects on the Q factor andlinear
that arise due a change in the ring radius and the gap size between the ring and the
waveguides
FSR that ariseare quantified
due a changeand thenring
in the discussed.
radius It
andis also determined
the gap that the
size between theQring
factorandin-
creases
linear when the ring
waveguides are radius increases,
quantified the Q
and then factor stabilizes
discussed. when
It is also the radius
determined is greater
that the Q
than 20
factor μm, andwhen
increases FSR decreases with increasing
the ring radius radius.
increases, the We simulate
Q factor stabilizesand discuss
when the elec-
the radius is
tro-optic
greater tunable
than 20 µm,microring
and FSR resonator, which
decreases with is a highly
increasing significant
radius. topic because
We simulate of its
and discuss
practical
the applications.
electro-optic tunableFor example,resonator,
microring an EO modulation
which is aspectrum of the microring
highly significant (with a
topic because
gap = 0.4 μm and a radius = 20 μm) is produced that is displaced by 80 pm when an electric
Crystals 2021, 11, 480 8 of 9

of its practical applications. For example, an EO modulation spectrum of the microring

(with a gap = 0.4 µm and a radius = 20 µm) is produced that is displaced by 80 pm when
an electric field intensity of 1 V/µm is applied. We expect that our results and analysis will
provide useful guidance to laboratory works on microring resonator in LTOI.

Author Contributions: Conceptualization, B.X.; methodology, B.X.; validation, S.Y. and S.J.; investiga-
tion, S.Y., H.H. and B.X.; data curation, S.Y.; writing—original draft preparation, S.Y.; writing—review
and editing, B.X., G.C., and S.R.; supervision, B.X.; funding acquisition, B.X. All authors have read
and agreed to the published version of the manuscript.
Funding: This work was supported by the Shenzhen Science and Technology Planning (NO.
JCYJ20190813103207106), the Project of Youth Innovative Talents in Higher Education Institutions
of Guangdong (NO. 2018KQNCX399), and the National Natural Science Foundation of China
(NO. 61935014).
Conflicts of Interest: The authors declare no conflict of interest.

References
1. Bogaerts, W.; De Heyn, P.; Van Vaerenbergh, T.; De Vos, K.; Selvaraja, S.K.; Claes, T.; Dumon, P.; Bienstman, P.; Van Thourhout, D.;
Baets, R. Silicon microring resonators. Laser Photonics Rev. 2012, 6, 47–73. [CrossRef]
2. Vahala, K.J. Optical microcavities. Nature 2003, 424, 839–846. [CrossRef] [PubMed]
3. Han, H.; Xiang, B. Simulation and analysis of electro-optic tunable microring resonators in silicon thin film on lithium niobate.
Sic. Rep. 2019, 9, 6302. [CrossRef] [PubMed]
4. Mak, J.C.C.; Sacher, W.D.; Xue, T.Y.; Mikkelsen, J.C.; Yong, Z.; Poon, J.K.S. Automatic resonance alignment of high-order microring
filters. IEEE J. Quantum. Elect. 2015, 51, 1–11. [CrossRef]
5. Barwicz, T.; Popovic, M.A.; Rakich, P.T.; Watts, M.R.; Haus, H.A.; Ippen, E.P.; Smith, H.I. Microring-resonator-based add-drop
filters in SiN: Fabrication and analysis. Opt. Express 2004, 12, 1437–1442. [CrossRef]
6. Chen, G.P.; Jiang, C. Reverse design of microring resonator channel dropping filters. Results Phys. 2020, 19, 103380. [CrossRef]
7. Xu, Q.F.; Manipatruni, S.; Schmidt, B.; Shakya, J.; Lipson, M. 12.5 Gbit/s carrier-injection-based silicon micro-ring silicon
modulators. Opt. Express 2007, 15, 430–436. [CrossRef]
8. Cao, W.; Hagan, D.; Thomson, D.J.; Nedeljkovic, M.; Littlejohns, C.G.; Knights, A.; Alam, S.U.; Wang, J.J.; Gardes, F.; Zhang, W.W.;
et al. High-speed silicon modulators for the 2 µm wavelength band. Optica 2018, 5, 1055–1062. [CrossRef]
9. Wang, Y.H.; Lv, P.; Zhang, Y.L.; Song, M.X.; Liu, C.L.; Wang, G.F.; Wang, C.X.; Qin, Z.K. Analysis of characteristics of a parallel
channel microring resonator electro-optic switch array. Optik 2018, 165, 332–340. [CrossRef]
10. Emelett, S.J.; Soref, R. Design and simulation of silicon microring optical routing switches. J. Lightwave Technol. 2005, 23, 1800–1807.
[CrossRef]
11. Cardenas, J.; Foster, M.A.; Sherwood-Droz, N.; Poitras, C.B.; Lira, H.L.R.; Zhang, B.B.; Gaeta, A.L.; Khurgin, J.B.; Morton, P.;
Lipson, M. Wide-bandwidth continuously tunable optical delay line using silicon microring resonators. Opt. Express 2010, 18,
26525–26534. [CrossRef] [PubMed]
12. Zhang, M.; Buscaino, B.; Wang, C.; Shams-Ansari, A.; Reimer, C.; Zhu, R.R.; Kahn, J.M.; Loncar, M. Broadband electro-optic
frequency comb generation in a lithium niobate microring resonator. Nature 2019, 568, 373–377. [CrossRef] [PubMed]
13. Kovach, A.; Chen, D.Y.; He, J.H.; Choi, H.; Dogan, A.H.; Ghasemkhani, M.; Taheri, H.; Armani, A.M. Emerging material systems
for integrated optical Kerr frequency combs. Adv. Opt. Photonics 2020, 12, 135–222. [CrossRef]
14. Fujii, S.; Tanabe, T. Dispersion engineering and measurement of whispering gallery mode microresonator for Kerr frequency
comb generation. Nanophotonics 2020, 9, 1087–1104. [CrossRef]
15. Wang, C.; Zhang, M.; Yu, M.J.; Zhu, R.R.; Hu, H.; Loncar, M. Monolithic lithium niobate photonic circuits for Kerr frequency
comb generation and modulation. Nat. Commun. 2019, 10, 978. [CrossRef]
16. Reed, G.T.; Mashanovich, G.; Gardes, F.Y.; Thomson, D.J. Silicon optical modulators. Nat. Photonics 2010, 4, 518–526. [CrossRef]
17. Xu, Q.F.; Fattal, D.; Beausoleil, R.G. Silicon microring resonators with 1.5-µm radius. Opt. Express 2008, 16, 4309–4315. [CrossRef]
18. Mi, G.C.; Horvath, C.; Aktary, M.; Van, V. Silicon microring refractometric sensor for atmospheric CO2 gas monitoring. Opt.
Express 2016, 24, 1773–1780. [CrossRef] [PubMed]
19. Zamora, V.; Lutzow, P.; Weiland, M.; Pergande, D. Investigation of cascaded SiN microring resonators at 1.3 µm and 1.5 µm. Opt.
Express 2013, 21, 27550–27557. [CrossRef]
20. Guarino, A.; Poberaj, G.; Rezzonico, D.; Degl’Innocenti, R.; Gunter, P. Electro-optically tunable microring resonators in lithium
niobate. Nat. Photonics 2007, 1, 407–410. [CrossRef]
21. Lu, J.J.; Surya, J.B.; Liu, X.W.; Bruch, A.W.; Gong, Z.; Xu, Y.T.; Tang, H.X. Periodically poled thin-film lithium niobate microring
resonators with a second-harmonic generation efficiency of 250,000%/W. Optica 2019, 6, 1455–1460. [CrossRef]
22. Yu, M.J.; Okawachi, Y.; Cheng, R.; Wang, C.; Zhang, M.; Gaeta, A.L.; Loncar, M. Raman lasing and soliton mode-locking in lithium
niobate microresonators. Light. Sci. Appl. 2020, 9, 9. [CrossRef]
Crystals 2021, 11, 480 9 of 9

23. Han, H.P.; Xiang, B.X.; Zhang, J.L. Simulation and analysis of single-mode microring resonators in lithium niobate thin films.
Crystals 2018, 8, 342. [CrossRef]
24. Casson, J.L.; Gahagan, K.T.; Scrymgeour, D.A.; Jain, R.K.; Robinson, J.M.; Gopalan, V.; Sander, R.K. Electro-optic coefficients of
lithium tantalate at near-infrared wavelengths. J. Opt. Soc. Am. B 2004, 21, 1948–1952. [CrossRef]
25. Barie, N.; Wessa, T.; Bruns, M.; Rapp, M. Love waves in SiO2 layers on STW-resonators based on LiTaO3 . Talanta 2004, 62, 71–79.
[CrossRef]
26. Lobino, M.; Marshall, G.D.; Xiong, C.; Clark, A.S.; Bonneau, D.; Natarajan, C.M.; Tanner, M.G.; Hadfield, R.H.; Dorenbos, S.N.;
Zijlstra, T.; et al. Correlated photon-pair generation in a periodically poled MgO doped stoichiometric lithium tantalate reverse
proton exchanged waveguide. Appl. Phys. Lett. 2011, 99, 081110. [CrossRef]
27. Kawachi, O.; Mineyoshi, S.; Endoh, G.; Ueda, M.; Ikata, O.; Hashimoto, K.; Yamaguchi, M. Optimal cut for leaky SAW on LiTaO3
for high performance resonators and filters. IEEE Trans. Ultrason. Ferroelectr. Freq. Control 2001, 48, 1442–1448. [CrossRef]
[PubMed]
28. Takai, T.; Iwamoto, H.; Takamine, Y.; Yamazaki, H.; Fuyutsume, T.; Kyoya, H.; Nakao, T.; Kando, H.; Hiramoto, M.; Toi, T.; et al.
High performance SAW resonator on new mutilayered substrate using LiTaO3 crystal. IEEE Trans. Ultrason. Ferroelectr. Freq.
Control 2017, 64, 1382–1389. [CrossRef]
29. Yan, X.S.; Liu, Y.A.; Ge, L.C.; Zhu, B.; Wu, J.W.; Chen, Y.P.; Chen, X.F. High optical damage threshold on-chip lithium tantalate
microdisk resonator. Opt. Lett. 2020, 45, 4100–4103. [CrossRef]
30. Yan, Y.Q.; Huang, K.; Zhou, H.Y.; Zhao, X.M.; Li, W.Q.; Li, Z.X.; Yi, A.L.; Huang, H.; Lin, J.J.; Zhang, S.B.; et al. Wafer-scale
fabrication of 42◦ rotated Y-cut LiTaO3 -on-insulator (LTOI) substrate for a SAW resonator. ACS Appl. Electron. Mater. 2019, 1,
1660–1666. [CrossRef]
31. Tauzin, A.; Dechamp, J.; Madeira, F.; Mazen, F.; Zussy, M.; Deguet, C.; Clavelier, L.; Moulet, J.S.; Richtarch, C.; Akatsu, T.;
et al. 3-inch single-crystal LiTaO3 films onto metallic electrode using Smart CutTM technology. Electron. Lett. 2008, 44, 822–824.
[CrossRef]
32. Ma, C.D.; Lu, F.; Xu, B.; Fan, R.R. Visualized strain profile in the process of crystal ion slicing of LiTaO3 . J. Phys. D Appl. Phys.
2016, 49, 205301. [CrossRef]
33. Berenger, J.P. A perfectly matched layer for the absorption of electromagnetic waves. J. Comput. Phys. 1994, 114, 185–200.
[CrossRef]
34. Smith, R.T.; Welsh, F.S. Temperature dependence of the elastic, piezoelectric, and dielectric constants of lithium tantalate and
lithium niobate. J. Appl. Phys. 1971, 42, 2219–2230. [CrossRef]
35. Wang, C.; Zhang, M.; Stern, B.; Lipson, M.; Lončar, M. Nanophotonic lithium niobate electro-optic modulators. Opt. Express 2018,
26, 1547–1555. [CrossRef] [PubMed]
36. Mahmoud, M.; Cai, L.; Bottenfield, C.; Piazza, G. Lithium niobate electro-optic racetrack modulator etched in Y-cut LNOI
platform. IEEE Photonics J. 2018, 10, 6600410. [CrossRef]
37. Chen, L.; Xu, Q.; Wood, M.G.; Reano, R.M. Hybrid silicon and lithium niobate electro-optical ring modulator. Optica 2014, 1,
112–118. [CrossRef]
38. Chen, L.; Chen, J.; Nagy, J.; Reano, R.M. Highly linear ring modulator from hybrid silicon and lithium niobate. Opt. Express 2015,
23, 13255–13264. [CrossRef] [PubMed]
39. Krasnokutska, I.; Tambasco, J.L.J.; Peruzzo, A. Tunable large free spectral range microring resonators in lithium niobate on
insulator. Sci. Rep. 2019, 9, 11086. [CrossRef]
40. Siew, S.Y.; Saha, S.S.; Tsang, M.; Danner, A.J. Rib Microring Resonators in Lithium Niobate on Insulator. IEEE Photonics Technol.
Lett. 2016, 28, 573–576. [CrossRef]