826_EVM_UserGuide

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EVM User's Guide: BQ79826-Q1

BQ79826-Q1 Evaluation Module (BMS086)
– <4.5mV ASIL-D accuracy (DC)

Description • Passive cell balancing with integrated FETs for up
The BQ79826Q1EVM Evaluation Module (EVM) to 300mA balancing currents
also referred to as BMS086 describes the general • Integrated electrochemical impedance
features, theory of operation, hardware setup, and spectroscopy (EIS) engine
use of TI's BQ79826-Q1 device, a highly integrated – Impedance Accuracy: 1% with 1A excitation,
stackable 26-cell monitor device with up to 300mA >200μΩ impedance
passive balancing current capability, ±1.25mV cell – Measurement frequency: 0.01Hz to 3.5 kHz
voltage sensing accuracy, integrated OV/UV cell • 20 Sensor and GPIO pins with arbitrated use
protector, 20 multi-purpose GPIO pins with additional – Digital IOs (GPIO) for Contactor/Relay and
temperature sensing capabilities, SPI/I2C controler Fuse driver control and status.
bus support and ASIL-D functional safety capability. – Analog Inputs (general use and temperature
Further BQ79826-Q1 integrates an electrochemical sense)
impedance spectroscopy (EIS) measurement engine – SPI and I2C controller interface
for in-system cell operation diagnostics and early – Dedicated sensor monitor with peak-hold
cell failiure detection. This device is primarily used detector
in automotive battery packs, industrial and comercial • Integrated diagnostics and protection
energy storage systems (ESS) and cell monitoring – Over/Under voltage, over/under temperature
applications with advanced diagnostic capabilities cell protection
for functional safety enabled systems. The BMS086 – Open-wire detection
evaluation board is intended for examining the – Two die temperature sensors
potential device use-case in systems containing – Battery pack supply over/under voltage
large format lithium-ion battery pack applications detection
to provide monitoring, system protection, and daisy- – Automatic diagnostics during cell balancing
chain communications. • Communication
Features – Upgraded Daisy-Chain Interface with 2 Mbps
(single) and 4 Mbps (dual) SPI modes
• 26 battery cell support
– Reverse MCU wake-up capability on any fault
– 0V to 5V range for cell or -2V to 2V range for – Transformer or capacitor isolation supprt
busbar – EMI / EMC optimized design
– 145V ABS MAX rating, 9V minimum supply
voltage Applications
– Busbar support on every channel • Battery Management System (BMS) in hybrid and
– Stackable up to 128 devices electric powertrain systems
• Voltage Accuracy • Energy storage battery packs with Battery
– <1.25mV cell accuracy across temperature Management Systems
range
1 Evaluation Module Overview

1.1 Introduction
The BMS086 Evaluation Module (EVM) is a fully assembled evaluation module designed for the evaluation of
BQ79826-Q1 device where the typical application of 26 battery cell channel monitor and balancing capability
is presented while most other features of the device like OV/UV cell protector, GPIO temperature reading
and OT/UT protection, SPI and I2C controller interfaces communication, Daisy-Chain communication, EIS
diagnostics and others can be evaluated. The EVM is self-sustained and includes all necessary components
SLUUD06 – FEBRUARY 2024 BQ79826-Q1 Evaluation Module (BMS086) 1

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for most function evaluation with only a need of a single power supply and a USB communication adapter to a
standard PC.
The BMS086 EVM is designed with an assumed system application presented in the following figure:
HV_TOP COMMH COMML
BMS086 EVM
Power Input Daisy-Cha in

DC-DC Com ms. &
Passive s Isolation
(Temp Sense)
Ana log In
GPIO1 8 PTC
VC26 GPIO1 9 NTC
GPIO2 0
:
CELL0 CELL0 :
: : VC0
Controller
: : BQ798 26-Q1
CB26 GPIO9
I 2C
GPIO1 0
CELL2 6 CELL2 6 :
:
:
SPI Controlle r
: CB0
GPIO1 3
: GPIO1 4
: GPIO1 5
GPIO1 6
:
:
:
:
GPIO1 2
GPIO1 1
GPIO1
GPIO8
GPIO2
GPIO4
GPIO6
GPIO3
GPIO5
GPIO7
GPIO1
:
: EIS Evaluation SPI Peripheral
GPIO2 0
SPI
GND
DSUB-9 USB2A NY
to P C USB Port...
Inte rface
Figure 1-1. BMS086 EVM System Block Diagram
The BMS086 EVM incorporates all required circuits and components for the operation of the following features:
• BQ79826-Q1 device communication through SPI interface. The EVM allows for VIO voltag level to be
sourced from the AVDD regulator of the BQ device (5V) or for the user to apply external VIO voltage to the
system.
• Cell battery measurement connections - connected through the EVM cell connectors to a battery cell stack.
For ease of use during evaluation a resistor ladder card acting as a cell simulator card is supplied with the
EVM assembly and allows simulating cell voltage without real cells connected.
• System and BQ79826-Q1 Temperature monitoring - the BMS086 EVM uses 3 (out of 20) GPIO pins that can
be configured as temperature monitoring probes. The EVM integrates an on-board NTC and PTC thermistor
while optionally the user can disconnect these and supply either external voltage or external temperature
sensing probes to these inputs.
• GPIO breakout connection - All GPIO pins are available at a breakout connector to be used for signal
monitoring or external system interconnect to the EVM.
• Controller I2C and SPI communication capability - The BMS086 EVM can be connected to an external I2C
or SPI compliant pheripheral device in order to read/write data from a remote MCU location using the global
BQ79826-Q1 daisy chain interface.
• Daisy-chain interface connectivity - This allows multiple device EVMs to be stacked in order to evaluate the
functionality of a larger battery pack systems. The EVM can as both:
2 BQ79826-Q1 Evaluation Module (BMS086) SLUUD06 – FEBRUARY 2024

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– Base device EVM - Where the communication is established through the controller MCU through the
SPI interface. In this case other EVMs can be stacked into the system and communicate through the
daisy-chain interface.
– Stack device EVM - Where the communication is established through the daisy-chain interface while also
other base or stack EVMs can be present in the system.
For evaluation purposes, the control of a single or multiple EVMs is possible using a PC-hosted graphical user
interface (GUI) in comination to a USB/SPI interface adapted card (USB2ANY).
1.2 Kit Contents
The BMS086 EVM kit conatins the contents listed in the table below.
Please contact the Texas Instruments product information center nearest you if any components are missing. It
is highly recommended to check TI's website to verify if the latest software and hardware revisions are being
used.
Table 1-1. BMS086 EVM Kit Contents
Item Quantity
BMS086 EVM Assembly 1
BMS086_RL Resistor Ladder Card 1
BMS086_EISEMU EIS Emulator Card 1
PR517-002 Daisy-Chain cable 1
Additionally, if a USB2ANY communication interface is required, the user can obtain one at TI's website:
1.3 Specification
The key electrical parameters of the BMS086 EVM are identified below:
Table 1-2. Key Electrical Parameters
Parameter Value
Maximum battery pack voltage 2400V
Stacked EVM System
Maximum EVM operating voltage 145V between test points HV_TOP and GND
5 V between test points VIO and GND
Maximum VCELLN to VCELLN-1 6V
Maximum GPION to GND input voltage 5.5V
Ambient temperature –40 °C to 105 °C
Short term operation (< 1 hour). Limited by components
using Nylon or Polyester housing.
Nominal operating temperature –20 °C to 60 °C
Long term operation.
Cell Balancing current Approximately 300mA (TAMB< 80°C)
1.4 Device Information

The BQ79826-Q1 is a multichannel automotive battery monitor with up to 26 cell and busbar measurement
channels and 20 GPIO channels for temperature and peripheral connections. The device is part of a future
family of BQ798xx devices that are design to support today’s evolving EV battery pack requirements including
higher cell counts, multiple pack configurations, multiple cell chemistries, wired/wireless communications,
improved efficiency and electronics reusability.
The BQ79826-Q1 includes integrated electrochemical impedance spectroscopy (EIS) engine. The EIS engine
provides a new way to detect impedance changes in the cell that allows for monitoring of aging, temperature,
SoC, thermal runaway and many other internal cell parameters. The device incorporates an intelligence sensor
controller to enable for easier and more reliable sensor measurements and decisions.

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General Texas Instruments High Voltage Evaluation (TI HV EVM) User Safety Guidelines
WARNING
Warning: To minimize risk of fire hazard, always verify and follow any specific safety instructions and
application considerations related to the batteries being used in conjunction with this EVM.
Always follow TI’s set-up and application instructions, including use of all interface components within their
recommended electrical rated voltage and power limits. Always use electrical safety precautions to help ensure
your personal safety and the safety of those working around you. Contact TI’s Product Information Center http://
support/ti./com for further information.
Save all warnings and instructions for future reference.
Failure to follow warnings and instructions may result in personal injury, property damage, or death due
to electrical shock and/or burn hazards.
The term TI HV EVM refers to an electronic device typically provided as an open framed, unenclosed printed-
circuit-board assembly. It is intended strictly for use in development laboratory environments, solely for qualified
professional users having training, expertise, and knowledge of electrical safety risks in development and
application of high-voltage electrical circuits. Any other use or application are strictly prohibited by Texas
Instruments. If you are not suitably qualified, you should immediately stop from further use of the HV EVM.
1. Work Area Safety:
a. Keep work area clean and orderly.
b. Qualified observer(s) must be present any time circuits are energized.
c. Effective barriers and signage must be present in the area where the TI HV EVM and its interface
electronics are energized, indicating operation of accessible high voltages may be present, for the
purpose of protecting inadvertent access.
d. All interface circuits, power supplies, evaluation modules, instruments, meters, scopes and other related
apparatus used in a development environment exceeding 50 VRMS or 75 VDC must be electrically
located within a protected Emergency Power Off (EPO) protected power strip.
e. Use a stable and non-conductive work surface.
f. Use adequately insulated clamps and wires to attach measurement probes and instruments. No
freehand testing whenever possible.
2. Electrical Safety:As a precautionary measure, it is always a good engineering practice to assume that the
entire EVM may have fully accessible and active high voltages.
a. De-energize the TI HV EVM and all its inputs, outputs, and electrical loads before performing any
electrical or other diagnostic measurements. Revalidate that TI HV EVM power has been safely de-
energized.
b. With the EVM confirmed de-energized, proceed with required electrical circuit configurations, wiring,
measurement equipment hook-ups and other application needs, while still assuming the EVM circuit and
measuring instruments are electrically live.
c. Once EVM readiness is complete, energize the EVM as intended.
WARNING
WARNING: while the EVM is energized, never touch the EVM or its electrical circuits as
they could be at high voltages capable of causing electrical shock hazard.
3. Personal Safety:
a. Wear personal protective equipment, for example, latex gloves or safety glasses with side shields or
protect EVM in an adequate lucent plastic box with interlocks from accidental touch.
4. Limitation for Safe Use:
a. EVMs are not to be used as all or part of a production unit.

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The following warnings and cautions are noted for the safety of anyone using or working close to the BQ79731-
Q1 and BQ79735-Q1 EVM. Observe all safety precautions.
Caution Do not leave EVM powered when unattended.
!
Danger High The BMS060 EVM is rated as a high voltage EVM, but it is not required to operate this EVM at high
Voltage voltage. If you apply high voltage to this board, all terminals should be considered high voltage.
spacer
Electric shock is possible when connecting the board to live wire. The board should be handled
with care by a professional.
spacer
For safety, use of isolated test equipment with overvoltage and overcurrent protection is highly
recommended.
CAUTION
The circuit module has signal traces, components, and component leads on the bottom of the board.
This may result in exposed voltages, hot surfaces, or sharp edges. Do not reach under the board
during operation.
CAUTION
The circuit module may be damaged by overtemperature. To avoid damage, monitor the temperature
during evaluation and provide cooling, as needed, for your system environment.
CAUTION
Some power supplies can be damaged by application of external voltages. If using more than
1 power supply, check your equipment requirements and use blocking diodes or other isolation
techniques, as needed, to prevent damage to your equipment.
CAUTION
The communication interface is not isolated on the EVM. Be sure no ground potential exists between
the computer and the EVM. Also be aware that the computer will be referenced to the Battery-
potential of the EVM.
2 Hardware

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2.1 Setup and Operation
BMS086 Overview
The following figure presents the BMS086 EVM and its subsections:
BATTERY CELL CONNECTORS (bottom side)
RESISTOR
LADDER CARD
CONNECTION
CELL0 - GND
CONNECTION
EVM POWER
VC, CB AND SUPPLY
CELL INPUT (if not sourced
BREAK-OUT by battery stack)
CONNECTIONS
ANALOG
(TEMP)
(Device-Up)
INPUT
SENSE
DAISY-CHAIN
COMMUNICATION
CONNECTION
SPI
CONTROLLER
CONNECTION
(Device-Down)
GPIO PIN
BREAK-OUT
CONNECTIONS
I2 C
CONTROLLER
CONNECTION
USB2ANY VIO SELECTION MODE SELECTION EIS EVALUATION

CONNECTION STATUS LEDs D-SUB9 CONNECTOR
Figure 2-1. BMS086 EVM Overview
WARNING
THIS BMS086 EVM PRODUCT CONTAINS EXPOSED CONDUCTIVE CONTACTS THAT
BECOME LIVE HIGH VOLTAGE SOURCES WHEN CONNECTED TO SUCH INPUTS. PLEASE
READ CAREFULLY CHAPTER "General Texas Instruments High Voltage Evaluation (TI HV
EVM) User Safety Guidelines" ABOVE IN THIS DOCUMENT BEFORE CONNECTING HIGH
VOLTAGE SOURCES TO THE BMS086 EVM.
The following EVM subsection are described:

• EVM Power Supply - This is the primary power supply to the BMS086 EVM when no battery cell stack is
used in the evaluation environment. The power supply required by the EVM is between +30 V up to +145V
connected between the HV_TOP and GND test points. In idle state with the BQ79826-Q1 device active,
the EVM consumes about 5 mA from this power input, however it can inrease depending on the state of
the circuits and the operation of the devices in the system. Please allow a power supply source capable of
delivering at least 100 mA when this input is used.
• Daisy-Chain communication - Allows connecting to other BMS086 EVMs in order to satisfy a complete
BMS system communication structure through the device integrated daisy-chain interface. As described in

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the BQ device data sheet, the COMH connection is to be connected to a higher-stack device or EVM,
while the COML connection is to be connected to a lower-stack device. The BMS086 EVM also supports
all three proposed isolation types for the VIF interface, capacitive (with or without a common-mode choke)
and transformer type isolation. Out of the box the EVM has the transformer type insulation components
populated.
• EIS Evaluation D-SUB9 connection (J1) - Allows electro impedance spectroscopy (EIS) evaluation by
connecting EIS specific circuits to the D-SUB9 connector. One example of such circuit which allowes
observing emulated EIS signals is the BMS086_EISEMU card which comes included in the BMS086 kit.
• Mode Selection Jumper - As described in the BQ79826-Q1 datasheet, the resistance value between the
MODE pin and the device ground will configure the AVDD regulator and multidrop communication support
upon device power-up. These settings can be selected based on the MODE (J3) jumpes as listed in the table
below:
Table 2-1. BMS086 MODE (J3) jumper selection
BMS086 MODE (J3) BMS086 MODE pin R BQ79826 MODE pin R AVDD setting Multidrop Comm.
value value limits setting
4 470 kΩ RMODE > 413 kΩ ON No
3 150 kΩ 132 kΩ < RMODE < 168 ON Yes

kΩ
2 56 kΩ 49 kΩ < RMODE < 63 kΩ OFF Yes
1 0Ω RMODE < 21 kΩ OFF No
• VIO voltage selection (J4) - Allows the BQ79826-Q1 device to be evaluated in both 3.3V and 5V logic-level
systems. The VIO voltage is the supply for all GPIO pins when used as digital inputs or outputs. The BMS086
EVM J4 can be used to select the VIO voltage source as described in the table below:
Table 2-2. BMS086 VIO (J4) jumper selection
BQ79826 VIO Source VIO level
AVDD regulator 5V
External Can be either 3.3V or 5V
• Status LEDs - Represent the state of the BQ79826-Q1 regulators. Further the state of the NFAULT pin
(GPIO3) can be observed in the case when GPIO3 is configured as an NFAULT output. Note that if the
GPIO3 pin is configured as any other function the NFAULT status LED will still be active and should not be
confused with a fault state of the device.
• USB2ANY connection (J5) - Is the main communication connection to the BMS086 device when using the
USB2ANY communication card. The users are free to use any other communication related hardware to
this connection as the pinout can be seen in the BMS086 schematic. Another example of communication
accessory is the BMS086_RF WiFi (wBMS) communication card (not included with the BMS086 kit) which
would allow wireless communication to the BQ79826-Q1 device.
• I2C controller connection (J2) - Allows for connecting an I2C pheripheral device, where the BQ79826-Q1
can be used as a data brigde to communicate with the pheripheral device. The I2C signal names can be seen
on the BMS086 J2 connector label. The BMS086 EVM also includes 10kΩ pull-up resistors to VIO for the
SDA and SCL I2C signal connections.
• SPI controller connection (J6) - Allows for connecting a SPI pheripheral device, where the BQ79826-Q1
can be used as a data brigde to communicate with the pheripheral device. The SPI signal names can be
seen on the BMS086 J6 connector label. The BMS086 EVM includes 100kΩ pull-up resistors for the CSDO,
CSDI and CSSI1 SPI signals and also a 100kΩ pull-down resistor for the CSCLK SPI signal.
• GPIO Break-Out connection (J7) - This connection is intended for monitor and evaluation of the BQ79826-
Q1 GPIO pins as it provides direct connection to these. The GPIO pin names can be seen on the BMS086
J7 connector label where the number of the connector pin aligns with the GPIO pin number (Ex: J7-Pin1 →
GPIO1, etc.).

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• Analog (Temperature) input sense - These inputs are intended for temperature probe sensing although can
be used for any analog input signal. The BM060 EVM has pull-up resistances populated for these, while also
a NTC and a PTC thermistors are also populated for simple evaluation.
• VC, CB and Cell Input Break-out connections - Allow for direct connection to a specific VC or CB pin of the
BQ79826 device, while also test points for the individual cell inputs are available.
• Battery Cell connections - The BMS086 EVM has multiple battery connection methods available. On
the bottom of the module connections are availaable through the J14, J16, J18, J19 and J20 connectors.
These connectors (Part Number: S14B-PUDSS-1(LF)(SN)) can be mated to a harness connector (Part
Number: PUDP-14V-S) to allow battery cells to be connected to the BMS086 EVM. On the top of the
BMS086 EVM, battery cell connections could be established through the J21, J22, J23 headers (10pin,
100mil spacing). These are also used when battery cells are not connected to the BMS086 EVM but the
accessory BMS086_RL resistor-ladder card is used in order to emulate cell voltage connections. In the case
where batteries are connected to the BMS086 EVM but are not already serialized externally forming a stack,
shorting reistors are also available on the EVM board that can be populated in order to form a serial stack of
battery cells.
• CELL0-GND connection (J15)- The J15 connection serves multiple purposes where primarily provides a
ground reference for CELL0 connection. During evaluation if the user can disconnect the CELL0 to GND
connection and externally provide ground reference to the CELL0 connection through the cell connection
harness. The ladder purpose of this connection is to provide EIS emulated signals in case when the
BMS086_RL resistor ladder card is used in combination with the BMS086_EISEMU card. In this case the
EIS emulator card outputs EIS emulated signal which needs to be connected to J15 as a reference voltage
for the resistor ladder card.
2.1.1 Single Board Evaluation Setup (Quick Start Guide)
As a single board the BMS086 EVM can be connected to a PC through the USB2ANY communication adapter
for initial operation and device communication. The connections required are presented in the figure below. The
EVM board has power supplied from an external power source that can be between 9V to 140V. A power supply
capable of delivering at least 100 mA is preferred. The USB2ANY communication adapter is connected through
the flex ribbon cable supplied with the USB2ANY adapter. Note that the red wire of the flex ribbon cable is pin 10
at the BM060 USB2ANY header.

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POWER SUPPLY UNIT
(+30V to +145V)
Flex Ribbon Cable
USB2ANY
Adapter
Figure 2-2. Single BMS060 EVM Setup
In the single board evaluation setup, for proper USB2ANY communication the user needs to make sure that
MODE selection J3 is set to either MODE-4 or MODE-3, while the VIO selection J4 jumper is set to pin 2-3.
The BMS086 is accompanied by graphical user interface (GUI) software, which can be downloaded from the
TI website, while the operation of the GUI software is explained in more detail in the BQ79826-Q1 GUI User's
Guide. The BMS086 GUI software allows full evaluation of the BQ79826 device and its capabilities.

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For battery cell emluation, the user can connect the BMS086_RL resistor ladder card onto the BMS086 EVM. As
seen in the figure above the correct connection is as: J21 → J3_3, J22 → J4_3, J23 → J5_3.
All around the BMS086 EVM there are LED signaling indicators for various functions. Their functions can be
described as:
• LDOIN LED - Indicates the operation of the BQ79826-Q1 integrated LDOIN buck regulator. This LED is
active as soon as power is applied to the EVM therefore it is also used as a general EVM power supply
indicator.
• AVDD LED - AVDD regulator active LED connected to BQ79826-Q1 AVDD pin. When power is connected to
the BMS086 the AVDD regulator of the BQ79826-Q1 device is active or disabled depending on the MODE
pin setting as desribed in the BQ79826-Q1 datasheet and the chapter above in this document. If the EVM
is configured in a more where the AVDD is on in device shutdown state, this LED will immediately illuminate
upon power supply connection.
• DVDD LED - DVDD digital regulator active LED connected to the BQ79826 DVDD pin through a buffer
transistor. When the BQ79826 device is in active mode the DVDD regulator is on and this LED will illuminate.
• NFAULT LED - Active when the BQ7973x pin is enabled (active-low output) indicating a fault in the BQ7973x
device. The operation of this LED is jumper J9 dependent.
• TSREF LED - Indicates the operation of the TSREF regulator in the BQ79826-Q1 device. The TSREF
regulator default power-up setting is active, therefore this LED will iluminate immidiately up device wake-up.
2.1.2 Stacked System Evaluation
BMS086 EVM boards may be stacked in a daisy chain bus to accomodate larger battery management systems
configurations. In this case the Vertical Interface (VIF) is utilized in order to daisy chain the communication from
the BMS086 EVM to other BMS086 EVMs.
The figure below shows one suggestion of a stacked EVM configuration, other configurations are allowed as well
based on the number of EVMs in the daisy-chain stack.
As described the supplied twisted pair cable is used in order to connect the communication between the EVMs
where each particular EVM connects through its COMML pins to the lower stack EVM while the COMMH pins
are conntected to the higher stack EVM. The last/highest stack EVM (also called "top of stack") has the COMMH
pins open unless a ring configuration is used. In the same manner the most bottom EVM (also called "base") has
its COMML pins open unless a ring configuration is used.

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POWER SUPPLY UNIT
(+30V to +145V)
POWER SUPPLY UNIT
(+30V to +145V)
Twisted Pair Cable

PR517-002
(included with EVM)
POWER SUPPLY UNIT
(+30V to +145V)
Flex Ribbon Cable
USB2ANY
Adapter
Figure 2-3. BMS060 EVM in a Stacked System Configuration

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2.2 Communication Connectors

Table 2-3. Communication connector J5 and J8 pinout
Pin BQ79826 Pin Name USB2ANY Signal use
J5-1 No Connect
J5-2 GPIO7 SPI Chip Select pin (NCS)
J5-3 GPIO6 SPI Serial Data In (SDI - MISO)
J5-4 GPIO5 SPI Serial Data Out (SDO - MOSI)
J5-5 VIO (Through J4) USB2ANY 3.3V Supply
J5-6 USB2ANY Ground
J5-7 GPIO3 NFault Input (Output from BQ79826)
J5-8 GPIO4 SPI Serial Clock (SCLK)
J5-9 No Connect
J5-10 No Connect
J8-1 LDOIN (or AVDD) No Connect (Used for BMS086_RF WiFi (wBMS) module supply
J8-2 No Connect
In addition, the Vertical Interface (VIF) connections are used to communicate to other BQ79826-Q1. The pinout
of these connectors is presented in the table below:
Table 2-4. COMML VIF Connector J25 and J27 - Used to Connect to Lower Stack Devices
Pin Signal Name
J25-1 Connected to BQ79826-Q1 COMMLN pin via isolation network
J27-3
J25-2 Connected to BQ79826-Q1 COMMLP pin via isolation network
J27-1
J25-3 NC
J25-4 NC
Table 2-5. COMMH VIF Connector J24 and J27 - Used to Connect to Higher Stack Devices
Pin Signal Name
J24-1 NC
J24-2 NC
J24-3 Connected to BQ79826-Q1 COMMHP pin via isolation network
J27-2
J24-4 Connected to BQ79826-Q1 COMMHN pin via isolation network
J27-4
2.2.1 Jumper Information

Below is a table explaining each of the jumpers available for user flexibility.
Table 2-6. Jumper Placements
EVM Designator Pins Connection Description Default Populated
J4 (1-2) VIO Supplied by AVDD = 5V VIO logic level selection
(2-3) VIO Supplied Externally Yes
J9 TSREF resistor bridge Yes
connection to VNTC_GPIO18,
VNTC_GPIO19, and
VNTC_GPIO20 analog inputs

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Table 2-6. Jumper Placements (continued)

EVM Designator Pins Connection Description Default Populated
J10 (1-2) VNTC_GPIO18 Analog Analog Input Sense connections Yes
input connected to GPIO18 to BQ79826-Q1 device
(3-4) VNTC_GPIO19 Analog Yes
input connected to GPIO19
(5-6) VNTC_GPIO19 Analog Yes
input connected to GPIO19
J12 (1-2) NTC connected to NTC and PTC Thermistor Yes
VNTC_GPIO19 analog in connections
(3-4) PTC connected to Yes
VNTC_GPIO18 analog in
3 Hardware Design Files

3.1 Schematic

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Figure 3-1. BMS086 schematic

Figure 3-2. BMS086_RL Resistor Ladder card schematic

Figure 3-3. BMS086_EISEMU EIS emulator card schematic

3.2 PCB Layout
Figure 3-4. BMS086 (Combined) EVM Top Overlay

Figure 3-5. BMS086 (Combined) EVM Top Solder

Figure 3-6. BMS086 (Combined) EVM Top Layer

Figure 3-7. BMS086 (Combined) EVM Bottom Layer

Figure 3-8. BMS086 (Combined) EVM Bottom Solder

Figure 3-9. BMS086 (Combined) EVM Bottom Overlay

3.2.1 Assembly
Figure 3-10. BMS086 (Combined) EVM Assembly Top

Figure 3-11. BMS086 (Combined) EVM Assembly Bottom
3.3 Bill of Materials (BOM)

Table 3-1. BMS086 (Combined) BOM Report
PackageReferenc
Designator Quantity Value Description PartNumber Manufacturer
e
-6V, +6V,
Test Point, Red Compact Keystone
HV_TOP, 4 5005
Compact, Red, TH Testpoint Electronics
HV_TOP_3
!PCB1, !PCB1_2, ! Printed Circuit
3 BMS086 Any
PCB1_3 Board
Part PR517-002
bq76PL455EVM
CABLE1 1 ladder board PR517-002 Krypton
communication
cable
2.54MM 0.1
Adafruit Industries
CABLE2 1 PITCH 2-PIN 4934
LLC
JUMPER CA

Table 3-1. BMS086 (Combined) BOM Report (continued)

PackageReferenc
e
2.4GHz PCB
Antenna. There is ANTENNA_DN00
ANT_2 1 SMD, 3-Leads N/A
nothing to buy or 7A
mount.
AVDD, DVDD,
Test Point,
I_OSC, REF_CAP, Orange Miniature
8 Miniature, Orange, 5003 Keystone
TSREF, V_OSC, Testpoint
TH
VDDR_2, VIO
AVDD_LED1,
DVDD_LED1,
4 Green LED, Green, SMD LED_0603 150060GS75000 Wurth Elektronik
LDOIN_LED1,
TSREF_LED1
Test Point,
BAT, BATPWR, Red Miniature
4 Miniature, Red, 5000 Keystone
LDOIN, VDDS_2 Testpoint
TH
C1, C6_1, C7_1,
C22, C24, C27,
C31, C34, C37,
C43, C46, C52,
C55, C58, C61, CAP, CERM, 0.1
C64, C67, C70, uF, 50 V, +/- 10%, GCM155R71H104
34 0.1uF 0402 MuRata
C73, C76, C79, X7R, AEC-Q200 KE02D
C82, C85, C88, Grade 1, 0402
C91, C94, C97,
C100, C103,
C106, C109,
C112, C122, C123
CAP, AL, 680 uF,
C1_1, C4_1 2 680uF D8xL20mm UPW1C681MPD6 Nichicon
16 V, +/- 20%, TH
C1_2, C4_2,
CAP, CERM, 0.1
C18_2, C19_2,
uF, 10 V, +/- 10%, GCM155R71A104
C20_2, C22_2, 9 0.1uF 0402 MuRata
X7R, AEC-Q200 KA55D
C24_2, C26_2,
Grade 1, 0402
C27_2
CAP, CERM, 1
C2, C18, C19, µF, 16 V,+/- 10%, CGA3E1X7R1C10
6 1uF 0603 TDK
C39, C40, C41 X7R, AEC-Q200 5K080AC
Grade 1, 0603
CAP, AL, 47 uF,
UCS2E470MHD1
C2_1 1 47uF 250 V, +/- 20%, D12.5xL20mm Nichicon
TO
TH
CAP, CERM, 1 uF,
C2_2, C3_2, C1005X5R1E105
4 1uF 25 V, +/- 10%, 0402 TDK
C5_2, C23_2 K050BC
X5R, 0402
C3, C12_1, C15, CAP, CERM, 0.1
C17_1, C20_1, uF, 16 V, +/- 10%, C0402C104K4RA
8 0.1uF 0402 Kemet
C22_1, C23_1, X7R, AEC-Q200 CAUTO
C26_1 Grade 1, 0402
CAP, CERM, 0.01
GRM155R71H103
C3_1 1 0.01uF uF, 50 V, +/- 10%, 0402 MuRata
KA88D
X7R, 0402
CAP, CERM, 0.01
C0603C103K2RA
C4, C10 2 0.01uF uF, 200 V, +/- 0603 Kemet
CTU
10%, X7R, 0603
CAP, CERM, 1 uF,
16 V, +/- 10%, GCM188R71C105
C5 1 1uF 0603 MuRata
X7R, AEC-Q200 KA64D
Grade 1, 0603


PackageReferenc
e
CAP, AL, 47 uF,
C5_1 1 47uF 35 V, +/- 20%, 0.4 D5xL11mm 35ZLJ47MTA5X11 Rubycon
ohm, TH
CAP, CERM, 12
pF, 25 V, +/-
C0402C120J3GA
C7_2, C8_2 2 12pF 5%, C0G/NP0, 0402 Kemet
CAUTO
AEC-Q200 Grade
1, 0402
C8, C9, C47, C48,
C49, C65, C68, CAP, CERM,
C71, C74, C77, 0.022 uF, 100 V,
CGA3E2X7R2A22
C80, C83, C86, 22 0.022uF +/- 10%, X7R, 0603 TDK
3K080AA
C89, C92, C95, AEC-Q200 Grade
C98, C101, C104, 1, 0603
C107, C110, C113
CAP, CERM, 470
GRM1555C1E471
C8_1 1 470pF pF, 25 V, +/- 5%, 0402 MuRata
JA01D
C0G/NP0, 0402
CAP, CERM, 1000
pF, 50 V, +/- 10%, GCM155R71H102
C9_1 1 1000pF 0402 MuRata
X7R, AEC-Q200 KA37D
Grade 1, 0402
CAP, CERM, 12
pF, 50 V,+/- 5%,
GCM1555C1H120
C9_2, C11_2 2 12pF C0G/NP0, AEC- 0402 MuRata
JA16J
Q200 Grade 1,
0402
CAP, CERM, 560
GRM155R71H561
C10_1 1 560pF pF, 50 V, +/- 10%, 0402 MuRata
KA01D
X7R, 0402
CAP, CERM, 1
C10_2, C13_2, pF, 50 V,+/-
GCM1555C1H1R
C14_2, C15_2, 5 1pF 25%, C0G/NP0, 0402 MuRata
0CA16D
C16_2 AEC-Q200 Grade
1, 0402
CAP, CERM, 10
uF, 16 V, +/- 10%, CGA4J1X7S1C10
C11, C12, C13 3 10uF 0805 TDK
X7S, AEC-Q200 6K125AC
Grade 1, 0805
CAP, CERM, 0.33
C0603C334K8RA
C11_1 1 0.33uF uF, 10 V, +/- 10%, 0603 Kemet
CTU
X7R, 0603
CAP, CERM, 5.6
GRM1555C1H5R
C12_2 1 5.6pF pF, 50 V, +/- 5%, 0402 MuRata
6CA01D
C0G/NP0, 0402
CAP, CERM, 820
GRM1555C1H821
C13_1 1 820pF pF, 50 V, +/- 5%, 0402 MuRata
JA01D
C0G/NP0, 0402
CAP, CERM, 0.47
uF, 16 V, +/- 10%, GCM188R71C474
C14, C20, C23 3 0.47uF 0603 MuRata
X7R, AEC-Q200 KA55D
Grade 1, 0603
CAP, CERM, 2200
GRM155R71H222
C14_1 1 2200pF pF, 50 V, +/- 10%, 0402 MuRata
KA01D
X7R, 0402
CAP, CERM, 750
GRM1555C1H751
C15_1 1 750pF pF, 50 V, +/- 5%, 0402 MuRata
JA01D
C0G/NP0, 0402


PackageReferenc
e
CAP, CERM, 1 µF,
250 V,+/- 10%, CGA9N3X7R2E10
C16 1 1uF 2220 TDK
X7R, AEC-Q200 5K230KE
Grade 1, 2220
CAP, CERM, 330
GRM1555C1E331
C16_1 1 330pF pF, 25 V,+/- 5%, 0402 MuRata
JA01D
C0G/NP0, 0402
CAP, CERM, 22
C17_2, C21_2, uF, 6.3 V, +/- 20%, GCM21BD70J226
3 22uF 0805 MuRata
C25_2 X7T, AEC-Q200 ME36L
Grade 1, 0805
CAP, CERM, 33
pF, 50 V,+/- 5%,
C18_1, C19_1, GCM1555C1H330
4 33pF C0G/NP0, AEC- 0402 MuRata
C27_1, C29_1 JA16D
Q200 Grade 1,
0402
CAP, CERM, 0.01
uF, 50 V, +/- 10%, GCM188R71H103
C21 1 0.01uF 0603 MuRata
X7R, AEC-Q200 KA37D
Grade 1, 0603
CAP, CERM, 1.5
C1608X7R1A155
C24_1, C25_1 2 1.5uF uF, 10 V, +/- 10%, 0603 TDK
K080AC
X7R, 0603
C28, C30, C33,
C36, C42, C45,
C51, C54, C57,
CAP, CERM, 4700
C60, C63, C66,
pF, 50 V, +/- 10%, GCM155R71H472
C69, C72, C75, 27 4700pF 0402 MuRata
X7R, AEC-Q200 KA37D
C78, C81, C84,
Grade 1, 0402
C87, C90, C93,
C96, C99, C102,
C105, C108, C111
Cap Ceramic
C29, C32, C35,
22nF 250V X7R
C38, C44, C50, CGA4J3X7R2E22
10 22nF 10% Pad SMD 0805 TDK Corporation
C53, C56, C59, 3K125AA
0805 +125°C
C62
Automotive T/R
CAP, CERM, 100
pF, 100 V, +/-
GCM1885C2A101
C114, C115 2 100pF 5%, C0G/NP0, 0603 MuRata
JA16D
AEC-Q200 Grade
1, 0603
CAP, CERM, 47
pF, 50 V,+/- 5%,
C120, C121, CGA2B2C0G1H4
4 47pF C0G/NP0, AEC- 0402 TDK
C124, C125 70J050BA
Q200 Grade 1,
0402
CELL0, CELL1,
CELL2, CELL3,
CELL4, CELL5,
CELL6, CELL7,
CELL8, CELL9,
CELL10, CELL11,
CELL12, CELL13, Test Point, Test Point,
27 5019 Keystone
CELL14, CELL15, Miniature, SMT Miniature, SMT
CELL16, CELL17,
CELL18, CELL19,
CELL20, CELL21,
CELL22, CELL23,
CELL24, CELL25,
CELL26


PackageReferenc
e
CELL0_GND_3, Test Point,
Black Compact
GND, GND_1, 12 Compact, Black, 5006 Keystone
Testpoint
GND_2 TH
Diode, Schottky,
Micro Commercial
D1_1, D3_1 2 200V 200 V, 2 A, SOD-123FL SMD220PL-TP
Components
SOD-123FL
D1_2 1 Green LED, Green, SMD LED_0603 150060VS75000 Wurth Elektronik
DIODE
D2 1 SCHOTTKY 200V PowerDI123 DFLS1200Q-7 Diodes
POWERDI123
Diode, Standard
Recovery SMC Diode
D2_1, D4_1 2 1000V SMA S1MTR
Rectifier, 1000 V, 1 Solutions
A, SMA
D2_2,
2 Red LED, Red, SMD LED_0603 150060RS75000 Wurth Elektronik
NFAULT_LED1
Rectifier Diode
D3 1 Schottky 0.2A 5ns SOT23 BAT54A,215 Nexperia
3-Pin SOT-23 T/R
24-V, 2-Channel
ESD Protection
D4, D5 2 Diode for In- SC70-3 ESD2CAN24DCK Texas Instruments
Vehicle Networks,
SC70-3
Diode, Zener, 18
ON
D5_1 1 18V V, 500 mW, SOD-123 MMSZ4705T1G
Semiconductor
SOD-123
Diode, Zener, 6.2
ON
D6_1, D7_1 2 6.2V V, 500 mW, SOD-123 MMSZ4691T1G
Semiconductor
SOD-123
FID1, FID1_1,
FID1_2, FID1_3,
Fiducial mark.
FID2, FID2_1,
12 There is nothing to N/A N/A N/A
FID2_2, FID2_3,
buy or mount.
FID3, FID3_1,
FID3_2, FID3_3
Machine Screw,
Round, #4-40 x NY PMS 440 0025 B&F Fastener
H1, H2, H3, H4 4 Screw
1/4, Nylon, Philips PH Supply
panhead
H5, H6, H7, H8 4 Standoff 1902C Keystone
CONN D-SUB
CONN_D- A-DF 09 A/KG- ASSMANN WSW
J1 1 RCPT 9POS R/A
SUB_RCPT9 T4S Components
SOLDER
Header, 2.54mm,
J1_1, J2_3, J8, Header, 2.54mm, Sullins Connector
5 1x2, Tin, Black, PEC01DAAN
J9, J15 2x1, TH Solutions
TH
Header
Header(Shrouded)
(Shrouded), FTSH-105-01-F-
J1_2 1 , 1.27mm, 5x2, Samtec
1.27mm, 5x2, DV-K
SMT
Gold, SMT
Header, 100mil, Header, 3 PIN, Sullins Connector
J1_3, J4 2 PEC03SAAN
3x1, Tin, TH 100mil, Tin Solutions
Header, 100mil, Header, 4x1, Sullins Connector
J2 1 PEC04SAAN
4x1, Tin, TH 100mil, TH Solutions
D-Sub, 2.77mm, 9 D-Sub, 2.77mm, 9 A-DS 09 A/KG-
J2_1 1 Assman WSW
Pos, Tin, R/A, TH Pos, R/A, TH T2S


PackageReferenc
e
Receptacle,
Header, 8x2, PPPC082LJBN- Sullins Connector
J2_2 1 100mil, 8x2, Gold,
2.54mm, R/A RC Solutions
R/A, TH
J3 1 PEC04DAAN
PPTC101LGBN- Sullins Connector
J3_3, J4_3, J5_3 3 CONN_RCPT10
RC Solutions
Header, 2.54mm, Header, 2.54mm, PRPC005DAAN- Sullins Connector
J5 1
5x2, Gold, TH 5x2, TH RC Solutions
TH, 6-Leads, Body
Header, 100mil, Sullins Connector
J6 1 608x100mil, Pitch PEC06SAAN
6x1, Tin, TH Solutions
100mil
Header, 100mil, Sullins Connector
J10 1 3x2 Header PEC03DAAN
3x2, Tin, TH Solutions
J11, J13, J17 3
J12, J27 2 PEC02DAAN
2x2, Tin, TH 2.54mm, TH Solutions
14 Position Dual
J14, J16, J18, Row Side Entry 2 S14B-
5 CONN_HDR14 JST
J19, J20 mm Through Hole PUDSS-1(LF)(SN)
Shrouded Header
PREC010SAAN-
J21, J22, J23 3 HDR10 Sullins
RC
Conn Shrouded
Header (4 Sides)
HDR 4 POS
J24, J25 2 CONN_HDR4 5-103672-3 TE Connectivity
2.54mm Solder
RA Side Entry
Thru-Hole Tube
100 µH
Shielded Drum
Core, Wirewound VLS4015CX-101M
L1 1 100uH 1616 TDK
Inductor 470 mA -H
2.4Ohm Max 1616
(4040 Metric)
Inductor,
Multilayer, Air
Core, 3.7 nH, 0.9 LQG15WZ3N7B0
L1_2, L4_2 2 3.7nH 0402 MuRata
A, 0.1 ohm, AEC- 2D
Q200 Grade 1,
SMD
Inductor,
Multilayer, Air
Core, 3.4 nH, 0.9 LQG15WZ3N4S0
L2_2, L3_2 2 3.4nH 0402 MuRata
A, 0.09 ohm, AEC- 2D
Q200 Grade 1,
SMD
Ferrite Bead, 1500
BLM18HE152SN1
L5_2 1 1500 ohm ohm @ 100 MHz, 0603 MuRata
D
0.5 A, 0603
Inductor,
Multilayer, Ferrite, MLZ2012N6R8LT
L6_2 1 6.8uH 0805 TDK
6.8 uH, 0.11 A, 000
0.25 ohm, SMD
Thermal Transfer
Printable Labels, PCB Label 0.650 x
LBL1 1 THT-14-423-10 Brady
0.650" W x 0.200" 0.200 inch
H - 10,000 per roll


PackageReferenc
e
Trans MOSFET Toshiba
Q1 1 N/P-CH Si 20V SOT563 SSM6L56FE,LM Semiconductor
0.8A 6-Pin ES T/R and Storage
MOSFET, N-CH,
IPD70R360P7SA Infineon
Q1_1 1 700V 700 V, 12.5 A, DPAK
UMA1 Technologies
DPAK
Transistor, NPN,
ON
Q2_1 1 40 V 40 V, 0.6 A, SOT-23 MMBT2222ALT1G
Semiconductor
SOT-23
RES, 60.4, 1%,
R1, R4, R175, CRCW060360R4F
6 60.4 0.1 W, AEC-Q200 0603 Vishay-Dale
R176, R177, R178 KEA
Grade 0, 0603
RES, 0, 5%, 0.063
CRCW04020000Z
R1_2 1 0 W, AEC-Q200 0402 Vishay-Dale
0ED
Grade 0, 0402
R1_3, R2_3,
R3_3, R4_3,
R5_3, R6_3,
R7_3, R8_3,
R9_3, R10_3,
R11_3, R12_3, RES, 100, 1%,
CRCW2512100RF
R13_3, R14_3, 26 100 1 W, AEC-Q200 2512 Vishay-Dale
KEG
R15_3, R16_3, Grade 0, 2512
R17_3, R18_3,
R19_3, R20_3,
R21_3, R22_3,
R23_3, R24_3,
R25_3, R26_3
R2, R12, R13,
R16_1, R17_1,
R19_1, R20_1,
RES, 10.0 k, 1%, RC0402FR-0710K
R24_1, R25_1, 15 10.0k 0402 Yageo America
0.063 W, 0402 L
R26_1, R27_1,
R30_1, R38, R39,
R40
RES, 19.6 k,
1%, 0.25 W, AEC-
R2_1, R5_1 2 19.6k 1206 ERJ-8ENF1962V Panasonic
Q200 Grade 0,
1206
R3, R9_1, R42,
R43, R45, R46,
R48, R51, R53,
R55, R59, R62,
R65, R68, R71,
R74, R77, R80, RES, 1.00 k, 1%,
32 1.00k 0402 RC0402FR-071KL Yageo America
R83, R86, R89, 0.0625 W, 0402
R92, R95, R100,
R105, R110,
R115, R120,
R125, R128,
R131, R134
RES, 18.2 k,
1%, 0.25 W, AEC-
R3_1, R4_1 2 18.2k 1206 ERJ-8ENF1822V Panasonic
Q200 Grade 0,
1206
RES, 100 k, 1%,
0.063 W, AEC- CRCW0402100KF
R3_2, R4_2 2 100k 0402 Vishay-Dale
Q200 Grade 0, KED
0402


PackageReferenc
e
R5, R8, R24,
R41, R44, R47,
R50, R54, R58,
R61, R64, R67,
R70, R73, R76,
R79, R82, R85,
R88, R91, R94,
R99, R104, R109, RES, 0, 5%,
R114, R119, 43 0 0.1 W, AEC-Q200 0402 ERJ-2GE0R00X Panasonic
R124, R127, Grade 0, 0402
R130, R133,
R151, R152,
R153, R154,
R155, R156,
R157, R158,
R171, R174,
R179, R182, R183
Res Thick Film
0402 10 Ohm
1% 0.1W(1/10W)
R6, R9 2 ±100ppm/C 0402 ERJ-2RKF10R0X Panasonic
Molded SMD
Automotive
Punched T/R
RES, 10.0, 1%, RC0603FR-0710R
R6_1 1 10 0603 Yageo
0.1 W, 0603 L
RES, 0, 5%,
R7, R11, R14,
4 0 0.1 W, AEC-Q200 0603 ERJ-3GEY0R00V Panasonic
R29_1
Grade 0, 0603
RES, 10.0 k, 1%, RC0603FR-0710K
R7_1 1 10.0k 0603 Yageo
0.1 W, 0603 L
RES, 3.3 k, 5%,
0.063 W, AEC- CRCW04023K30J
R7_2, R8_2 2 3.3k 0402 Vishay-Dale
Q200 Grade 0, NED
0402
RES, 6.80, 1%,
0.25 W, AEC-
R8_1 1 6.8 1206 ERJ-8RQF6R8V Panasonic
Q200 Grade 0,
1206
RES, 10.0 k, 1%,
R9_2, R10_2,
0.063 W, AEC- CRCW040210K0F
R11_2, R12_2, 5 10.0k 0402 Vishay-Dale
Q200 Grade 0, KED
R13_2
0402
RES, 7.87 k, 1%,
0.063 W, AEC- CRCW04027K87F
R10_1 1 7.87k 0402 Vishay-Dale
Q200 Grade 0, KED
0402
RES, 3.30 k, 1%, RC0603FR-073K3
R11_1 1 3.30k 0603 Yageo
0.1 W, 0603 L
RES, 1.00, 1%, Stackpole
R12_1 1 1 1206 CSR1206FT1R00
0.5 W, 1206 Electronics Inc
RES, 20.0 k, 1%,
0.063 W, AEC- CRCW040220K0F
Q200 Grade 0, KED
0402
RES, 3.83 k, 1%,
0.063 W, AEC- CRCW04023K83F
Q200 Grade 0, KED
0402


PackageReferenc
e
RES, 470 k, 1%,
R15 1 470k .1 W, AEC-Q200 0402 ERJ-2RKF4703X Panasonic
Grade 0, 0402
Res Carbon
Film POT 10K
Ohm 10%
1/20W 1(Elec)/
PTH_POT_9MM5 PTD904-1015K-
R15_1 1 10kΩ 1(Mech)Turn 6mm Bourns
_32MM2 B103
(32.2 X 9.5
X 11.3mm)
Pin Panel Mount/
Through Hole
RES, 100 k, 5%,
0.063 W, AEC- CRCW0402100KJ
R15_2 1 100k 0402 Vishay-Dale
Q200 Grade 0, NED
0402
RES, 150 k, 1%,
R16 1 150k 0.1 W, AEC-Q200 0402 ERJ-2RKF1503X Panasonic
Grade 0, 0402
RES, 56.0 k, 1%,
0.063 W, AEC- RK73H1ETTP560
R17 1 56.0k 0402 KOA Speer
Q200 Grade 0, 2F
0402
RES, 100 k, 1%,
R18, R19, R20,
0.0625 W, AEC- AC0402FR-07100
R21, R22, R23, 9 100k 0402 Yageo America
Q200 Grade 0, KL
R26, R27, R28
0402
RES, 220, 1%, 0.1 RC0603FR-07220
R18_1, R21_1 2 220 0603 Yageo
W, 0603 RL
Res Carbon
Film POT 10K
Ohm 20%
1/20W 1(Elec)/
PTH_POT_9MM5 PTD902-2015K-
R22_1 1 10kΩ 1(Mech)Turn 6mm Bourns
0_24MM65 B103
(24.65 X 9.5
X 11.3mm)
Pin Panel Mount/
Through Hole
Res Carbon
Film POT 10K
Ohm 20%
1/20W 1(Elec)/ PTH_POT_10MM PTV09A-4020U-
R23_1, R28_1 2 Bourns Inc.
1(Mech)Turn 6mm 0_11MM0 B103
Pin Bracket
Mount/Through
Hole
RES, 4.70 k, 1%, RC0402FR-074K7
R29, R33 2 4.70k 0402 Yageo America
0.0625 W, 0402 L
RES, 1.0 k,
5%, 0.25 W, AEC-
R30, R31, R32 3 1.0k 0603 ESR03EZPJ102 Rohm
Q200 Grade 0,
0603
RES, 150 k, 1%, RC0603FR-07150
R31_1 1 150k 0603 Yageo
0.1 W, 0603 KL


PackageReferenc
e
R49, R52, R56,
R60, R63, R66,
R69, R72, R75,
R78, R81, R84, RES, 7.5, 5%,
R87, R90, R93, 0.75 W, AEC- CRCW20107R50J
27 7.5 2010 Vishay-Dale
R96, R101, R106, Q200 Grade 0, NEF
R111, R116, R121, 2010
R126, R129,
R132, R135,
R138, R141
±1% tolerance
10kΩ linear
thermistor
available in
R57 1 10k SOD-523 TMP6131DYAT Texas Instruments
0402 and 0603
package options
2-SOT-5X3 -40 to
125
R172, R173, RES, 15.0, 1%, RC0603FR-0715R
4 15 0603 Yageo
R180, R181 0.1 W, 0603 L
Thermistor NTC,
RT1 1 NTC 10k ohm, 2%, 0603 ERT-J1VG103GA Panasonic
0603
SH1, SH1_3, SH2,
SH2_3, SH4, SH5, Shunt, 100mil, Shunt 2 pos. 100
11 881545-2 TE Connectivity
SH6, SH7, SH8, Gold plated, Black mil
SH9, SH10
Flyback
Converters For
For DC/DC
Converters SMPS SMT8_11MM0_12
T1_1 1 PA5099.002NLT Pulse Electronics
Transformer MM5
2250VDC Isolation
200kHz Surface
Mount
Battery
Management
SMT6_0IN33_0IN
T3, T4 2 Pulse Transformer XFBMC2103-2S-B XFMRS
38
1CT:1CT Surface
Mount
Single-Channel
High-Speed Low-
Side Gate Driver
with Negative UCC27517AQDB
U1 1 SOT23-5 Texas Instruments
Input Voltage VRQ1
Capability (with 4-
A Peak Source
and Sink)
Boost, Buck,
Flyback, Forward,
SEPIC Regulator
Positive Output
UCC28C50QDRQ
U1_1 1 Step-Up, Step- SOIC8 Texas Instruments
1
Down, Step-Up/
Step-Down DC-
DC Controller IC
8-SOIC


PackageReferenc
e
Single Output
Automotive LDO,
150 mA, Fixed
3.3 V Output, 2.7
TPS76333QDBVR
U1_2 1 to 10 V Input, 5- DBV0005A Texas Instruments
G4Q1
pin SOT-23 (DBV),
-40 to 125 degC,
Green (RoHS and
no Sb/Br)
Automotive
26S/24S Battery BQ79826ZQPZSR
U2 1 TQFP100 Texas Instruments
Monitor with Smart Q1
EIS Engine
Bipolar, 120-MHz,
12.6-V, RRIO,
U2_1, U4_1 2 VSSOP8 OPA2863IDGKR Texas Instruments
Voltage-Feedback
Amplifier
General Purpose
Amplifier 2
U3_1 1 SOIC8 TLV9102IDR Texas Instruments
Circuit Rail-to-Rail
8-SOIC
Low-Capacitance
6-Channel +/-15
kV ESD
Protection Array
U3_2 1 RSE0008A TPD6E004RSER Texas Instruments
for High-Speed
Data Interfaces,
RSE0008A
(UQFN-8)
Automotive
qualified
SimpleLink!"
wireless MCU
XCC2662R1FTW
U4_2 1 for use in VQFN48 Texas Instruments
RGZRQ1
wireless battery
management
systems 48-VQFN
-40 to 105
VNTC_GPIO18, Test Point,
White Miniature
VNTC_GPIO19, 3 Miniature, White, 5002 Keystone
Testpoint
VNTC_GPIO20 TH
Crystal, 48 MHz,
CX2016DB48000
Y1_2 1 10 ppm, 7 pF, 2x1.6mm Kyocera
C0FPLC1
SMD
FC-13A
Crystal, 32.768
Y2_2 1 3.2x1.5mm 32.768000kHz 9 Epson
kHz, SMD
+20.0-20.0
C1_3, C2_3,
C3_3, C4_3,
C5_3, C6_3,
C7_3, C8_3,
C9_3, C10_3,
C11_3, C12_3,
CAP, CERM, 47
C13_3, C14_3, GRM32ER71A476
0 47uF uF, 10 V, +/- 20%, 1210 MuRata
C15_3, C16_3, ME15L
X7R, 1210
C17_3, C18_3,
C19_3, C20_3,
C21_3, C22_3,
C23_3, C24_3,
C25_3, C26_3,
C27_3, C28_3


PackageReferenc
e
CAP, CERM, 1 uF,
16 V, +/- 10%, GCM188R71C105
C6 0 1uF 0603 MuRata
X7R, AEC-Q200 KA64D
Grade 1, 0603
CAP, CERM, 12
pF, 50 V,+/- 5%,
GCM1555C1H120
C6_2 0 12pF C0G/NP0, AEC- 0402 MuRata
JA16J
Q200 Grade 1,
0402
CAP, CERM,
0.022 uF, 100 V,
CGA3E2X7R2A22
C7 0 0.022uF +/- 10%, X7R, 0603 TDK
3K080AA
AEC-Q200 Grade
1, 0603
CAP, CERM, 220
GRM188R72E221
C17 0 220pF pF, 250 V, +/- 0603 MuRata
KW07D
10%, X7R, 0603
CAP, CERM, 33
pF, 50 V,+/- 5%,
GCM1555C1H330
C21_1, C28_1 0 33pF C0G/NP0, AEC- 0402 MuRata
JA16D
Q200 Grade 1,
0402
CAP, CERM, 4700
pF, 50 V, +/- 10%, GCM155R71H472
C25 0 4700pF 0402 MuRata
X7R, AEC-Q200 KA37D
Grade 1, 0402
CAP, CERM, 2200
pF, 50 V, +/- 10%, GCM155R71H222
C26 0 2200pF 0402 MuRata
X7R, AEC-Q200 KA37D
Grade 1, 0402
CAP, CERM, 2200
pF, 2000 V,+/-
C116, C117, C118, 1206J2K00222KX Knowles
0 2200pF 10%, X7R, AEC- 1206
C119 R Capacitors
Q200 Grade 1,
1206
Diode, TVS, Uni,
120 V, 193 Vc,
D1 0 120V SMA SMAJ120A Littelfuse
400 W, 2.1 A,
SMA
Receptacle, Ultra
Miniature Coaxial, Ultra small CO-AX Hirose Electric Co.
J3_2 0 U.FL-R-SMT-1(01)
Male Pin, 50 ohm, SMD Ltd.
SMT
J4_2 0 PEC02SAAN
J7 0
J28, J29 0 PEC03SAAN
100 µH
Shielded Drum
Core, Wirewound SMT2_6MM0_6M VLS6045EX-101M
L2 0 100uH TDK
Inductor 900 M3 -H
mA 470mOhm
Nonstandard
L3, L4 0 4.7mH Line Filter SRF0905 SRF0905-472Y Bourns
RES, 0, 5%,
R1_1 0 0 0.1 W, AEC-Q200 0603 ERJ-3GEY0R00V Panasonic
Grade 0, 0603

Revision History www.ti.com

PackageReferenc
e
RES, 10.0 k, 1%,
0.063 W, AEC- CRCW040210K0F
Q200 Grade 0, KED
0402
RES, 0, 5%, 0.063
R5_2, R6_2, CRCW04020000Z
0 0 W, AEC-Q200 0402 Vishay-Dale
R14_2 0ED
Grade 0, 0402
RES, 10, 5%,
CRCW060310R0J
R10 0 10 0.1 W, AEC-Q200 0603 Vishay-Dale
NEA
Grade 0, 0603
R25, R34, R35,
R36, R37, R159,
R160, R161, RES, 0, 5%,
R162, R163, 0 0 0.1 W, AEC-Q200 0402 ERJ-2GE0R00X Panasonic
R164, R165, Grade 0, 0402
R166, R167,
R168, R169, R170
RES, 100, 1%,
CRCW2512100RF
R27_3, R28_3 0 100 1 W, AEC-Q200 2512 Vishay-Dale
KEG
Grade 0, 2512
R97, R98, R102,
R103, R107,
R108, R112,
R113, R117, R118,
R122, R123,
RES, 0, 5%, 0.1
R136, R137, 0 0 0603 RC0603JR-070RL Yageo
W, 0603
R139, R140,
R142, R143,
R144, R145,
R146, R147,
R148, R149, R150
300µH - Pulse
SMT6_7MM62_6
T1, T2 0 Transformer 1:1 SM91514AL-E Bourns
MM37
Surface Mount
Stand Alone
Watchdog with
programmable
U2_2 0 DRC0010J TPS3430WDRCR Texas Instruments
timeout period,
DRC0010J
(VSON-10)
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
DATE REVISION NOTES
February 2024 * Pre-APL Release
Living Document, subject to change

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IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD
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These resources are intended for skilled developers designing with TI products. You are solely responsible for (1) selecting the appropriate
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TI Confidential - NDA Restrictions

EVM User's Guide: BQ79826-Q1

– <4.5mV ASIL-D accuracy (DC)

1 Evaluation Module Overview

SLUUD06 – FEBRUARY 2024 BQ79826-Q1 Evaluation Module (BMS086) 1

Evaluation Module Overview www.ti.com

HV_TOP COMMH COMML

Power Input Daisy-Cha in

Figure 1-1. BMS086 EVM System Block Diagram

2 BQ79826-Q1 Evaluation Module (BMS086) SLUUD06 – FEBRUARY 2024

www.ti.com Evaluation Module Overview

1.4 Device Information

SLUUD06 – FEBRUARY 2024 BQ79826-Q1 Evaluation Module (BMS086) 3

Evaluation Module Overview www.ti.com

4 BQ79826-Q1 Evaluation Module (BMS086) SLUUD06 – FEBRUARY 2024

Caution Do not leave EVM powered when unattended.

SLUUD06 – FEBRUARY 2024 BQ79826-Q1 Evaluation Module (BMS086) 5

2.1 Setup and Operation

BATTERY CELL CONNECTORS (bottom side)

USB2ANY VIO SELECTION MODE SELECTION EIS EVALUATION

Figure 2-1. BMS086 EVM Overview

The following EVM subsection are described:

6 BQ79826-Q1 Evaluation Module (BMS086) SLUUD06 – FEBRUARY 2024

4 470 kΩ RMODE > 413 kΩ ON No

3 150 kΩ 132 kΩ < RMODE < 168 ON Yes

2 56 kΩ 49 kΩ < RMODE < 63 kΩ OFF Yes

1 0Ω RMODE < 21 kΩ OFF No

External Can be either 3.3V or 5V

SLUUD06 – FEBRUARY 2024 BQ79826-Q1 Evaluation Module (BMS086) 7

8 BQ79826-Q1 Evaluation Module (BMS086) SLUUD06 – FEBRUARY 2024

POWER SUPPLY UNIT

Figure 2-2. Single BMS060 EVM Setup

SLUUD06 – FEBRUARY 2024 BQ79826-Q1 Evaluation Module (BMS086) 9

10 BQ79826-Q1 Evaluation Module (BMS086) SLUUD06 – FEBRUARY 2024

POWER SUPPLY UNIT

POWER SUPPLY UNIT

Twisted Pair Cable

POWER SUPPLY UNIT

Figure 2-3. BMS060 EVM in a Stacked System Configuration

SLUUD06 – FEBRUARY 2024 BQ79826-Q1 Evaluation Module (BMS086) 11

2.2 Communication Connectors

2.2.1 Jumper Information

12 BQ79826-Q1 Evaluation Module (BMS086) SLUUD06 – FEBRUARY 2024

www.ti.com Hardware Design Files

Table 2-6. Jumper Placements (continued)

3 Hardware Design Files

SLUUD06 – FEBRUARY 2024 BQ79826-Q1 Evaluation Module (BMS086) 13

Hardware Design Files www.ti.com

Figure 3-1. BMS086 schematic

14 BQ79826-Q1 Evaluation Module (BMS086) SLUUD06 – FEBRUARY 2024

www.ti.com Hardware Design Files

Figure 3-2. BMS086_RL Resistor Ladder card schematic

SLUUD06 – FEBRUARY 2024 BQ79826-Q1 Evaluation Module (BMS086) 15

Hardware Design Files www.ti.com

Figure 3-3. BMS086_EISEMU EIS emulator card schematic

16 BQ79826-Q1 Evaluation Module (BMS086) SLUUD06 – FEBRUARY 2024

www.ti.com Hardware Design Files

3.2 PCB Layout

Figure 3-4. BMS086 (Combined) EVM Top Overlay

SLUUD06 – FEBRUARY 2024 BQ79826-Q1 Evaluation Module (BMS086) 17