PD - 93757B

IRLML2502
HEXFET® Power MOSFET
l Ultra Low On-Resistance
l N-Channel MOSFET
G 1
l SOT-23 Footprint VDSS = 20V
l Low Profile (<1.1mm) 3 D
l Available in Tape and Reel RDS(on) = 0.045Ω
l Fast Switching S 2

Description
These N-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely
low on-resistance per silicon area. This benefit, combined
with the fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable device
for use in battery and load management.

A thermally enhanced large pad leadframe has been

incorporated into the standard SOT-23 package to produce Micro3
a HEXFET Power MOSFET with the industry's smallest
footprint. This package, dubbed the Micro3, is ideal for
applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micro3 allows it
to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards. The thermal
resistance and power dissipation are the best available.

Absolute Maximum Ratings

Parameter Max. Units
VDS Drain- Source Voltage 20 V
ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 4.2
ID @ TA= 70°C Continuous Drain Current, VGS @ 4.5V 3.4 A
IDM Pulsed Drain Current  33
PD @TA = 25°C Power Dissipation 1.25
W
PD @TA = 70°C Power Dissipation 0.8
Linear Derating Factor 0.01 W/°C
VGS Gate-to-Source Voltage ± 12 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C

Thermal Resistance
Parameter Typ. Max. Units
RθJA Maximum Junction-to-Ambientƒ 75 100 °C/W

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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 20 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.01 ––– V/°C Reference to 25°C, ID = 1mA
––– 0.035 0.045 VGS = 4.5V, ID = 4.2A ‚
RDS(on) Static Drain-to-Source On-Resistance Ω
––– 0.050 0.080 VGS = 2.5V, ID = 3.6A ‚
VGS(th) Gate Threshold Voltage 0.60 ––– 1.2 V VDS = VGS, I D = 250µA
gfs Forward Transconductance 5.8 ––– ––– S VDS = 10V, ID = 4.0A
––– ––– 1.0 VDS = 16V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 25 VDS = 16V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V
Qg Total Gate Charge ––– 8.0 12 ID = 4.0A
Qgs Gate-to-Source Charge ––– 1.8 2.7 nC VDS = 10V
Qgd Gate-to-Drain ("Miller") Charge ––– 1.7 2.6 VGS = 5.0V ‚
td(on) Turn-On Delay Time ––– 7.5 ––– VDD = 10V
tr Rise Time ––– 10 ––– ID = 1.0A
ns
td(off) Turn-Off Delay Time ––– 54 ––– RG = 6Ω
tf Fall Time ––– 26 ––– RD = 10Ω ‚
Ciss Input Capacitance ––– 740 ––– VGS = 0V
Coss Output Capacitance ––– 90 ––– pF VDS = 15V
Crss Reverse Transfer Capacitance ––– 66 ––– ƒ = 1.0MHz

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol D

––– ––– 1.3

(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G
––– ––– 33
(Body Diode)  p-n junction diode. S

VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 1.3A, VGS = 0V ‚
trr Reverse Recovery Time ––– 16 24 ns TJ = 25°C, IF = 1.3A
Q rr Reverse Recovery Charge ––– 8.6 13 nC di/dt = 100A/µs ‚

Notes:
 Repetitive rating; pulse width limited by ƒ Surface mounted on FR-4 board, t ≤ 5sec.
max. junction temperature. ( See fig. 11 )

‚ Pulse width ≤ 300µs; duty cycle ≤ 2%.

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 IRLML2502

100 VGS
100 VGS
TOP 7.00V TOP 7.00V
5.00V 5.00V
4.50V 4.50V
I D , Drain-to-Source Current (A)

I D , Drain-to-Source Current (A)

3.50V 3.50V
3.00V 3.00V
2.70V 2.70V
2.50V 2.50V
BOTTOM 2.25V BOTTOM 2.25V

2.25V
2.25V
10 10

20µs PULSE WIDTH 20µs PULSE WIDTH

TJ = 25 °C TJ = 150 °C
1 1
0.1 1 10 100 0.1 1 10 100
VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

100 2.0
ID = 4.0A
R DS(on) , Drain-to-Source On Resistance
I D , Drain-to-Source Current (A)

1.5
(Normalized)

TJ = 25 ° C
1.0

TJ = 150 ° C
0.5

V DS = 15V
20µs PULSE WIDTH VGS = 4.5V
10 0.0
2.0 2.4 2.8 3.2 3.6 4.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
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1200 10
VGS = 0V, f = 1MHz ID = 4.0A
Ciss = Cgs + Cgd , Cds SHORTED VDS = 10V
Crss = Cgd

VGS , Gate-to-Source Voltage (V)

1000 Coss = Cds + Cgd 8
C, Capacitance (pF)

800 C iss
6

600

4
400

2
200
Coss
Crss
0 0
1 10 100 0 4 8 12 16
VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

100 1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ISD , Reverse Drain Current (A)

100
I D , Drain Current (A)

10
TJ = 150 ° C
10us
10
100us

1 1ms
1
TJ = 25 ° C
10ms
TA = 25 ° C
TJ = 150 ° C
V GS = 0 V Single Pulse
0.1 0.1
0.4 0.6 0.8 1.0 1.2 1.4 0.1 1 10 100
VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
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4.0

3.0
I D , Drain Current (A)

2.0

1.0

0.0
25 50 75 100 125 150
TC , Case Temperature ( ° C)

Fig 9. Maximum Drain Current Vs.

Case Temperature

1000
Thermal Response (Z thJA )

100
D = 0.50

0.20

10 0.10
0.05
P DM
0.02
0.01 t1
1 SINGLE PULSE t2
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10
t1 , Rectangular Pulse Duration (sec)

Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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R DS ( on ) , Drain-to-Source On Resistance ( Ω )
0.05 0.30
R DS(on) , Drain-to -Source Voltage ( Ω )

VGS = 2.5V
0.04 0.20

Id = 4.0A
0.03 0.10
VGS = 4.5V

0.02 0.00
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 10 20 30 40
VGS, Gate -to -Source Voltage ( V ) iD , Drain Current ( A )

Fig 11. On-Resistance Vs. Gate Voltage Fig 12. On-Resistance Vs. Drain Current

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Micro3 Package Outline
Dimensions are shown in millimeters (inches)

D L E A D A S S IG N M E N T S IN C H E S M ILL IM ET E R S
3 D IM
-B- 1 - G A TE M IN MA X M IN MAX
2 - SO U R C E A .03 2 .04 4 0.8 2 1 .11
3 - D R AIN A1 .00 1 .00 4 0.0 2 0 .10

3 3 B .01 5 .02 1 0.3 8 0 .54

E H
C .004 .006 0 .10 0.15
-A - 0.20 ( .00 8 ) M A M
1 2 D .105 .120 2 .67 3.05
e .07 50 BA S IC 1.90 B A SIC
e1 .03 75 BA S IC 0.9 5 B AS IC
e E .04 7 .055 1.2 0 1 .40
H .083 .098 2 .10 2.50
e1
L .00 5 .0 10 0.1 3 0 .25
θ 0° 8° 0° 8°
A θ
M IN IM U M R E C O M ME N D E D FO O T PR IN T
-C- 0.008 (.0 03) 0 .80 ( .031 )
A1 L C 3X
B 3X
3X 3X 0 .90
0.10 (.00 4) M C A S B S ( .0 35 ) 2.00
3X ( .079 )

N OTES:
1 . D IM EN SIO N IN G & T O L E R A N C IN G P ER A N SI Y1 4.5M -1 982.
2 . C O N TR O LLIN G D IM E N S IO N : IN C H . 0.95 ( .037 )
3 D IM EN SIO N S D O N O T IN C LU D E M O LD F LA SH . 2X

Micro3 Part Marking Information

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IRLML2502
Micro3 Tape & Reel Information
Dimensions are shown in millimeters (inches)

8mm

FEED DIRECTION
4mm

NOTES:
1. OUT LINE CONFORMS TO EIA-481 & EIA-541.

Ø 7"

8mm

NOT ES :
1. OUT LINE CONFORMS T O EIA-481 & EIA-541.

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Data and specifications subject to change without notice. 5/00
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