PD - 9.

1257C

IRLML2402
HEXFET Power MOSFET
l Generation V Technology
D
l Ultra Low On-Resistance
l N-Channel MOSFET VDSS = 20V
l SOT-23 Footprint
l Low Profile (<1.1mm) G
l Available in Tape and Reel RDS(on) = 0.25
l Fast Switching S

Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.

A customized leadframe has been incorporated into the

standard SOT-23 package to produce a HEXFET Power M ic ro3
MOSFET with the industry's smallest footprint. This
package, dubbed the Micro3, is ideal for applications
where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micro3 allows it to fit easily into
extremely thin application environments such as portable
electronics and PCMCIA cards.

Absolute Maximum Ratings

Parameter Max. Units
ID @ TA = 25C Continuous Drain Current, VGS @ 4.5V 1.2
ID @ TA = 70C Continuous Drain Current, VGS @ 4.5V 0.95 A
IDM Pulsed Drain Current 7.4
PD @TA = 25C Power Dissipation 540 mW
Linear Derating Factor 4.3 mW/C
VGS Gate-to-Source Voltage 12 V
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ,TSTG Junction and Storage Temperature Range -55 to + 150 C

Thermal Resistance
Parameter Typ. Max. Units
RJA Maximum Junction-to-Ambient 230 C/W

8/25/97
IRLML2402
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 20 V VGS = 0V, ID = 250A
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient 0.024 V/C Reference to 25C, ID = 1mA
0.25 VGS = 4.5V, ID = 0.93A
RDS(on) Static Drain-to-Source On-Resistance
0.35 VGS = 2.7V, ID = 0.47A
VGS(th) Gate Threshold Voltage 0.70 V VDS = VGS , ID = 250A
gfs Forward Transconductance 1.3 S VDS = 10V, ID = 0.47A
1.0 VDS = 16V, VGS = 0V
IDSS Drain-to-Source Leakage Current A
25 VDS = 16V, VGS = 0V, TJ = 125C
Gate-to-Source Forward Leakage -100 VGS = -12V
IGSS nA
Gate-to-Source Reverse Leakage 100 VGS = 12V
Qg Total Gate Charge 2.6 3.9 ID = 0.93A
Qgs Gate-to-Source Charge 0.41 0.62 nC VDS = 16V
Qgd Gate-to-Drain ("Miller") Charge 1.1 1.7 VGS = 4.5V, See Fig. 6 and 9
td(on) Turn-On Delay Time 2.5 VDD = 10V
tr Rise Time 9.5 ID = 0.93A
ns
td(off) Turn-Off Delay Time 9.7 RG = 6.2
tf Fall Time 4.8 RD = 11, See Fig. 10
Ciss Input Capacitance 110 VGS = 0V
Coss Output Capacitance 51 pF VDS = 15V
Crss Reverse Transfer Capacitance 25 = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
D
IS Continuous Source Current MOSFET symbol
0.54
(Body Diode) showing the
A
G
ISM Pulsed Source Current integral reverse
7.4
(Body Diode) p-n junction diode. S

VSD Diode Forward Voltage 1.2 V TJ = 25C, IS = 0.93A, VGS = 0V

t rr Reverse Recovery Time 25 38 ns TJ = 25C, IF = 0.93A
Q rr Reverse RecoveryCharge 16 24 nC di/dt = 100A/s

Notes:
Repetitive rating; pulse width limited by Pulse width 300s; duty cycle 2%.
max. junction temperature. ( See fig. 11 )

ISD 0.93A, di/dt 90A/s, VDD V(BR)DSS, Surface mounted on FR-4 board, t 5sec.
TJ 150C
 IRLML2402

100 100
VGS VGS
TOP 7.5V TOP 7.5V
5.0V 5.0V
4.0V 4.0V
3.5V 3.5V
I , D ra in -to -S o u rce C u rre n t (A )

I , D ra in -to -S o u rce C u rre n t (A )

3.0V 3.0V
2.5V 2.5V
10 2.0V 2.0V
BOTT OM 1.5V 10
BOTT OM 1.5V

1 1

1 .5V
0.1 0.1
D

D
1 .5V
20 s P U LSE W IDTH 20 s P U LSE W IDTH
TJ = 25 C A TJ = 15 0C
0.01 0.01 A
0.1 1 10 0.1 1 10
V D S , Drain-to-Source V oltage (V) V D S , Drain-to-Source V oltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

10 2.0
I D = 0 .93 A
R D S (o n ) , D ra in -to -S o u rc e O n R e sis ta n ce

T J = 2 5 C
I D , D r ain- to-S ourc e C urre nt (A )

T J = 1 5 0 C
1.5

1
(N o rm a liz e d )

1.0

0.1

0.5

VD S = 1 0 V
2 0 s PU L SE W ID TH VG S = 4 .5 V
0.01 0.0
A A
1.5 2.0 2.5 3.0 3.5 4.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
V G S , Ga te-to-S o urce V oltage (V ) T J , Junction T em perature (C )

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
IRLML2402

200 10
V GS = 0 V, f = 1M H z I D = 0.9 3A
C is s = C gs + C gd , Cds SH O RTE D VD S = 16 V
C rs s = C gd

V G S, G a te -to -S o u rc e V o lta g e (V )
160 C o ss = C ds + C g d 8
C is s
C , C a p a c ita n c e (p F )

120 6
C os s

80 4

C rs s
40 2

FO R TEST C IR C U IT
SEE F IGU R E 9
0 A 0 A
1 10 100 0.0 1.0 2.0 3.0 4.0
V D S , Drain-to-Source V oltage (V) Q G , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

10 100
OPE R ATIO N IN TH IS A RE A LIMITE D
BY R D S(o n)
I S D , R e v e rse D ra in C u rre n t (A )

T J = 1 50 C
I D , D ra in C u rre n t (A )

1 10

T J = 25 C
10 0s

0.1 1
1m s

T A = 25 C 10m s
T J = 15 0C
VG S = 0 V S ing le Pulse
0.01 A 0.1 A
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 10 100
V S D , Source-to-D rain V oltage (V ) V D S , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
 IRLML2402
RD
QG VDS

4.5V VGS
QGS QGD D.U.T.
RG
+
- VDD
VG
4.5V
Pulse Width 1 s
Charge Duty Factor 0.1 %

Fig 9a. Basic Gate Charge Waveform Fig 10a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.

VDS
50K
90%
12V .2F
.3F

+
V
D.U.T. - DS

10%
VGS
VGS
3mA td(on) tr t d(off) tf

IG ID
Current Sampling Resistors

Fig 9b. Gate Charge Test Circuit Fig 10b. Switching Time Waveforms
1000
(Z thJA )

D = 0.50
100
0.20
0.10
Thermal Response

0.05
10
0.02
0.01 P DM

t1
SINGLE PULSE
1 (THERMAL RESPONSE) t2

Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10 100
t1, Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

IRLML2402
Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T
Low Stray Inductance
Ground Plane

Low Leakage Inductance
Current Transformer
-

+


- +
-

RG dv/dt controlled by RG +
Driver same type as D.U.T. VDD
-
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test

Driver Gate Drive

P.W.
Period D=
P.W. Period

VGS=10V *

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD

Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple 5% ISD

* VGS = 5V for Logic Level Devices

Fig 12. For N-Channel HEXFETS
 IRLML2402
Package Outline
SOT-23 Outline
Dimensions are shown in millimeters (inches)

D L E A D A S S IG N M E N TS IN C H E S M IL L IM E T E R S
3 D IM
- B - 1 - G A TE M IN MAX M IN MAX
2 - S O U R CE A . 03 2 . 04 4 0 .8 2 1 .1 1
3 - D R A IN A1 . 00 1 . 00 4 0 .0 2 0 .1 0

3 3 B . 01 5 . 02 1 0 .3 8 0 .5 4
E H
C .0 0 4 .0 0 6 0 .1 0 0 .1 5
-A - 0 . 20 ( .0 0 8 ) M A M
1 2 D .1 0 5 .1 2 0 2 .6 7 3 .0 5
e . 07 5 0 B A S IC 1. 9 0 B A S IC
e1 . 03 7 5 B A S IC 0 .9 5 B A S IC
e E . 04 7 .0 55 1 .2 0 1 .4 0
H .0 8 3 .0 9 8 2 .1 0 2 .5 0
e1
L . 00 5 .0 1 0 0 .1 3 0 .2 5
0 8 0 8
A
M IN IM U M R E C O M M E N D E D F O O T P R IN T
-C - 0. 00 8 (.0 0 3 ) 0 .8 0 ( .0 3 1 )
A1 L C 3X
B 3X
3X 3X 0 .9 0
0. 1 0 (.0 0 4 ) M C A S B S ( .0 3 5 ) 2 .0 0
3X ( .0 7 9 )

NOTES:
1 . D I M E N S IO N IN G & T O L E R A N C I N G PE R A N S I Y 1 4 .5 M -1 9 8 2.
2 . C O N T R O L L IN G D IM E N S IO N : IN C H . 0 . 95 ( .0 3 7 )
3 D I M E N S IO N S D O N O T IN C L U D E M O LD F L A S H . 2X

Part Marking Information

SOT-23

E X A M P L E : T H IS IS A N IR L M L 6 30 2

W ORK WO RK
YE AR Y W EE K W YEA R Y W E EK W
DAT E
PAR T NU MB ER
CODE
2001 A 27 A
1C YW 2001 1 01 A
2002 B 28 B
2002 2 02 B
2003 3 03 C 2003 C 29 C
Y = YEAR C O DE 1994 4 04 D 1994 D 30 D
1995 5 1995 E
W = W E EK CO D E
TOP 1996 6 1996
1997
F
G
1997 7
1998 8 1998 H
1999 9 1999 J
2000 0 24 X 2000 K 50 X
25 Y 51 Y
P ART NUM BE R EX AMP LES: DAT E CO DE E XAM PLES : 52 Z
26 Z
1 A = IR L M L 24 0 2 YW W = 9503 = 5C
1 B = IR L M L 28 0 3 YW W = 9532 = EF
1 C = IR L M L 63 0 2 W O R K W E E K = (1 -2 6 ) IF P R E C E D E D B Y L A S T D IG IT O F C A LE N D E R Y E A R
1 D = IR L M L 51 0 3
W O R K W E E K = ( 2 7 -52 ) IF P R E C E D E D B Y L E T T E R
IRLML2402
Tape & Reel Information
SOT-23
Dimensions are shown in millimeters (inches)

2 .0 5 ( .080 ) 1.6 ( .06 2 ) 1.32 ( .0 51 )

1 .9 5 ( .077 ) 1.5 ( .06 0 )
1.85 ( .07 2 ) 1.12 ( .0 45 )
4 .1 ( .1 61 )
3 .9 ( .1 54 ) 1.65 ( .06 5 )

TR 3.5 5 ( .139 )
8 .3 ( .3 26 )
3.4 5 ( .136 ) 7 .9 ( .3 12 )

FE E D D IR E CTIO N 4.1 ( .16 1 )

3.9 ( .15 4 ) 1 .1 ( .0 43 ) 0.3 5 ( .01 3 )
0 .9 ( .0 36 ) 0.2 5 ( .01 0 )

17 8.00
( 7.00 8 )
MAX.

9.90 ( .3 90 )
8.40 ( .3 31 )

N O TE S:
1 . CO N TR O LL IN G D IM E N SIO N : M ILLIM E TE R.
2 . O U TL IN E C O N FO RM S TO E IA -48 1 & E IA- 54 1.

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
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http://www.irf.com/ Data and specifications subject to change without notice. 8/97