FQA9N90C: 900V N-Channel MOSFET

FQA9N90C 900V N-Channel MOSFET
September 2006
QFET
FQA9N90C
900V N-Channel MOSFET
Features
9A, 900V, RDS(on) = 1.4 @VGS = 10 V Low gate charge ( typical 45 nC) Low Crss ( typical 14pF) Fast switching 100% avalanche tested Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.
TO-3P
G DS
FQA Series
Absolute Maximum Ratings

Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed
(Note 1)
Parameter
FQA9N90C
900 9.0 5.7 36 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units
V A A A V mJ A mJ V/ns W W/C C C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
900 9.0 28 4.0 280 2.22 -55 to +150 300
Thermal Characteristics
Symbol
RJC RCS RJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient
Typ
-0.24 --
Max
0.45 -40
Units
C/W C/W C/W
2006 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FQA9N90C Rev. A1
Package Marking and Ordering Information

Device Marking
FQA9N90C FQA9N90C
Device
FQA9N90C FQA9N90C_F109
Package
TO-3P TO-3PN
Reel Size
---
Tape Width
---
Quantity
30 30
Electrical Characteristics
Symbol
Off Characteristics BVDSS BVDSS/ TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr
NOTES:
TC = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
Test Conditions
VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 900 V, VGS = 0 V VDS = 720 V, TC = 125C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V VDS = VGS, ID = 250 A VGS = 10 V, ID = 4.5 A VDS = 50 V, ID = 4.5 A VDS = 25 V, VGS = 0 V, f = 1.0 MHz
(Note 4)
Min
900 -----3.0 ------
Typ
-0.99 -----1.12 9.2 2100 175 14
Max Units
--10 100 100 -100 5.0 1.4 -2730 230 18 V V/C A A nA nA V S pF pF pF ns ns ns ns nC nC nC
On Characteristics
Dynamic Characteristics
Switching Characteristics VDD = 450 V, ID = 11.0A, RG = 25 ---(Note 4, 5)
50 120 100 75 45 13 18 ---550 6.5
110 250 210 160 58 ---
----
VDS = 720 V, ID = 11.0A, VGS = 10 V

(Note 4, 5)
--
Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS =9.0 A VGS = 0 V, IS = 9.0 A, dIF / dt = 100 A/s
(Note 4)
------
9.0 36 1.4 ---
A A V ns C
1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 21mH, IAS =9.0A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 9.0A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature
FQA9N90C Rev. A1
Typical Performance Characteristics

Figure 1. On-Region Characteristics
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top :
Figure 2. Transfer Characteristics
10
10
ID, Drain Current [A]
150 C
o
10
25 C
10
0
-55 C
10
-1
Notes : 1. 250s Pulse Test 2. TC = 25
Notes : 1. VDS = 50V 2. 250s Pulse Test
10
-1
10
10
10
-1
10
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue
3.0
RDS(ON) [ ], Drain-Source On-Resistance
IDR, Reverse Drain Current [A]
2.5
10
VGS = 10V
2.0
VGS = 20V
10
1.5
150
25
Notes : 1. VGS = 0V 2. 250s Pulse Test
Note : TJ = 25
1.0
10
15
20
25
30
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics

3500 3000 2500
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
Figure 6. Gate Charge Characteristics

12
VDS = 180V
10
Ciss
VGS, Gate-Source Voltage [V]
VDS = 450V VDS = 720V
Capacitance [pF]
2000 1500 1000 500 0 -1 10
Coss
Notes : 1. VGS = 0 V 2. f = 1 MHz
Crss
2
Note : ID = 9A
10
10
10
20
30
40
50
QG, Total Gate Charge [nC]
FQA9N90C Rev. A1
Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation vs. Temperature
1.2
Figure 8. On-Resistance Variation vs. Temperature

3.0
BVDSS, (Normalized) Drain-Source Breakdown Voltage
1.1
RDS(ON), (Normalized) Drain-Source On-Resistance
2.5
2.0
1.0
1.5
1.0
Notes : 1. VGS = 10 V 2. ID = 4.5 A
0.9
Notes : 1. VGS = 0 V 2. ID = 250 A
0.5
0.8 -100
-50
50
100
o
150
200
0.0 -100
-50
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case Temperature

10
10
Operation in This Area is Limited by R DS(on)
10 s 100 s 1 ms 10 ms DC
8
10
10
10
-1
Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse
10
-2
10
10
10
10
0 25
50
75
100
125
150
TC, Case Temperature []
Figure 11. Transient Thermal Response Curve

10
0
Z JC(t), Thermal Response
D = 0 .5
-1
10
0 .2 0 .1 0 .0 5 0 .0 2
N o te s : 1 . Z J C (t) = 0 .4 5 /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z J C (t)
PDM t1
s in g le p u ls e
t2
10
-2
0 .0 1
10
-5
10
-4
10
-3
10
-2
10
-1
10
10
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
FQA9N90C Rev. A1
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FQA9N90C Rev. A1
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FQA9N90C Rev. A1
Mechanical Dimensions
TO-3P
15.60 0.20 3.80 0.20 13.60 0.20 3.20 0.10 9.60 0.20 4.80 0.20 1.50 0.05
+0.15
12.76 0.20
19.90 0.20
16.50 0.30
3.00 0.20 1.00 0.20
3.50 0.20
2.00 0.20
13.90 0.20
23.40 0.20
18.70 0.20
1.40 0.20
5.45TYP [5.45 0.30]
5.45TYP [5.45 0.30]
0.60 0.05
+0.15
Dimensions in Millimeters
FQA9N90C Rev. A1
Mechanical Dimensions (Continued)
TO-3PN
Dimensions in Millimeters 8
FQA9N90C Rev. A1
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. OCX SILENT SWITCHER UniFET FACT Quiet Series ACEx OCXPro UltraFET GlobalOptoisolator ActiveArray SMART START OPTOLOGIC GTO Bottomless SPM VCX HiSeC Build it Now Stealth Wire OPTOPLANAR I2C CoolFET SuperFET PACMAN CROSSVOLT SuperSOT-3 POP i-Lo DOME SuperSOT-6 Power247 ImpliedDisconnect EcoSPARK SuperSOT-8 PowerEdge IntelliMAX E2CMOS SyncFET PowerSaver ISOPLANAR TCM PowerTrench LittleFET EnSigna TinyBoost MICROCOUPLER FACT QFET TinyBuck MicroFET FAST QS TinyPWM MicroPak QT Optoelectronics FASTr TinyPower MICROWIRE Quiet Series FPS TinyLogic MSX RapidConfigure FRFET MSXPro RapidConnect TINYOPTO SerDes Across the board. Around the world. TruTranslation ScalarPump The Power Franchise UHC Programmable Active Droop
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILDS WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information
Product Status Formative or In Design First Production
Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I20
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
9 FQA9N90C Rev. A1

FQA9N90C: 900V N-Channel MOSFET

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FQA9N90C 900V N-Channel MOSFET

Absolute Maximum Ratings

900 9.0 28 4.0 280 2.22 -55 to +150 300

2006 Fairchild Semiconductor Corporation