Uln 2003 A

ULN2002A, ULN2003A, ULN2003AI
ULQ2003A, ULN2004A, ULQ2004A

SLRS027S – DECEMBER 1976 – REVISED JUNE 2024
ULN200x, ULQ200x High-Voltage, High-Current Darlington Transistor Arrays

1 Features The ULx2004A devices have a 10.5kΩ series base
resistor to allow operation directly from CMOS
• 500mA-rated collector current (single output)
devices that use supply voltages of 6V to 15V. The
• High-voltage outputs: 50V
required input current of the ULx2004A device is
• Output clamp diodes
below that of the ULx2003A devices, and the required
• Inputs compatible with various types of logic
voltage is less than that required by the ULN2002A
• Relay-driver applications
device.
2 Applications Package Information
• Relay Drivers PART NUMBER PACKAGE(1) PACKAGE SIZE(2)
• Stepper and DC Brushed Motor Drivers ULN200xAD SOIC (16) 9.90mm × 3.91mm
• Lamp Drivers ULN200xAN PDIP (16) 19.30mm × 6.35mm
• Display Drivers (LED and Gas Discharge) ULN200xANS SOP (16) 10.30mm × 5.30mm
• Line Drivers
ULN200xAPW TSSOP (16) 5.00mm × 4.40mm
• Logic Buffers
ULN2003ADYY SOT (16) 4.20mm × 2.00mm
3 Description
(1) For all available packages, see the orderable addendum at
The ULx200xA devices are high-voltage, high-current the end of the data sheet.
Darlington transistor arrays. Each consists of seven (2) The package size (length × width) is a nominal value and
includes pins, where applicable.
NPN Darlington pairs that feature high-voltage outputs
with common-cathode clamp diodes for switching 9
COM
inductive loads. 1 16
1B 1C
The collector-current rating of a single Darlington pair
is 500mA. The Darlington pairs can be paralleled 2 15
for higher current capability. Applications include 2B 2C
relay drivers, hammer drivers, lamp drivers, display
3 14
drivers (LED and gas discharge), line drivers, and 3B 3C
logic buffers. For 100V (otherwise interchangeable)
versions of the ULx2003A devices, see the SLRS023 4 13
4B 4C
data sheet for the SN75468 and SN75469 devices.
The ULN2002A device is designed specifically for use 5 12
5B 5C
with 14V to 25V PMOS devices. Each input of this
device has a Zener diode and resistor in series to 6 11
control the input current to a safe limit. The ULx2003A 6B 6C
devices have a 2.7kΩ series base resistor for each
7 10
Darlington pair for operation directly with TTL or 5V 7B 7C
CMOS devices.
Simplified Block Diagram
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
SLRS027S – DECEMBER 1976 – REVISED JUNE 2024 www.ti.com
Table of Contents
1 Features............................................................................1 6 Parameter Measurement Information.......................... 11
2 Applications..................................................................... 1 7 Detailed Description......................................................13
3 Description.......................................................................1 7.1 Overview................................................................... 13
4 Pin Configuration and Functions...................................3 7.2 Functional Block Diagrams....................................... 13
5 Specifications.................................................................. 4 7.3 Feature Description...................................................14
5.1 Absolute Maximum Ratings........................................ 4 7.4 Device Functional Modes..........................................14
5.2 ESD Ratings............................................................... 4 8 Application and Implementation.................................. 15
5.3 Recommended Operating Conditions.........................4 8.1 Application Information............................................. 15
5.4 Thermal Information....................................................4 8.2 Typical Application.................................................... 15
5.5 Electrical Characteristics: ULN2002A......................... 5 8.3 System Examples..................................................... 18
5.6 Electrical Characteristics: ULN2003A and 8.4 Power Supply Recommendations.............................18
ULN2004A.....................................................................5 8.5 Layout....................................................................... 18
5.7 Electrical Characteristics: ULN2003AI........................ 6 9 Device and Documentation Support............................20
5.8 Electrical Characteristics: ULN2003AI........................ 6 9.1 Documentation Support............................................ 20
5.9 Electrical Characteristics: ULQ2003A and 9.2 Related Links............................................................ 20
ULQ2004A.....................................................................7 9.3 Receiving Notification of Documentation Updates....20
5.10 Switching Characteristics: ULN2002A, 9.4 Support Resources................................................... 20
ULN2003A, ULN2004A................................................. 7 9.5 Trademarks............................................................... 20
5.11 Switching Characteristics: ULN2003AI..................... 7 9.6 Electrostatic Discharge Caution................................20
5.12 Switching Characteristics: ULN2003AI..................... 8 9.7 Glossary....................................................................20
5.13 Switching Characteristics: ULQ2003A, 10 Revision History.......................................................... 20
ULQ2004A.....................................................................8 11 Mechanical, Packaging, and Orderable
5.14 Typical Characteristics.............................................. 9 Information.................................................................... 21
2 Submit Document Feedback Copyright © 2024 Texas Instruments Incorporated
Product Folder Links: ULN2002A ULN2003A ULN2003AI ULQ2003A ULN2004A ULQ2004A

www.ti.com SLRS027S – DECEMBER 1976 – REVISED JUNE 2024
4 Pin Configuration and Functions
1B 1 16 1C
2B 2 15 2C
3B 3 14 3C
4B 4 13 4C
5B 5 12 5C
6B 6 11 6C
7B 7 10 7C
E 8 9 COM
Figure 4-1. D, N, NS, and PW Package 16-Pin SOIC, PDIP, SO, and TSSOP Top View
Table 4-1. Pin Functions

PIN
I/O(1) DESCRIPTION
NAME NO.
1B 1
2B 2
3B 3
4B 4 I Channel 1 through 7 Darlington base input
5B 5
6B 6
7B 7
1C 16
2C 15
3C 14
4C 13 O Channel 1 through 7 Darlington collector output
5C 12
6C 11
7C 10
COM 9 — Common cathode node for flyback diodes (required for inductive loads)
E 8 — Common emitter shared by all channels (typically tied to ground)
(1) I = Input, O = Output
Copyright © 2024 Texas Instruments Incorporated Submit Document Feedback 3

5 Specifications
5.1 Absolute Maximum Ratings
at 25°C free-air temperature (unless otherwise noted)(1)
MIN MAX UNIT
VCC Collector-emitter voltage 50 V
Clamp diode reverse voltage(2) 50 V
VI Input voltage(2) 30 V
Peak collector current, See Figure 5-4 and Figure 5-5 500 mA
IOK Output clamp current 500 mA
Total emitter-terminal current –2.5 A
ULN200xA –40 70
ULN200xAI –40 105
TA Operating free-air temperature range °C
ULQ200xA –40 85
ULQ200xAT –40 105
TJ Operating virtual junction temperature 150 °C
Lead temperature for 1.6 mm (1/16 inch) from case for 10 seconds 260 °C
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to the emitter/substrate terminal E, unless otherwise noted.
5.2 ESD Ratings

VALUE UNIT
Electrostatic Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000

V(ESD) V
discharge Charged device model (CDM), per JEDEC specification JESD22-C101(2) ±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
5.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VCC Collector-emitter voltage (non-V devices) 0 50 V
TJ Junction temperature –40 125 °C
5.4 Thermal Information

ULx200x
D N NS PW DYY
THERMAL METRIC(1) UNIT
(SOIC) (PDIP) (SO) (TSSOP) (SOT)
16 PINS 16 PINS 16 PINS 16 PINS 16 PINS
RθJA Junction-to-ambient thermal resistance 88.6 66.7 95.0 114.1 123.1 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 50.1 54.2 53.3 50.3 59.6 °C/W
RθJB Junction-to-board thermal resistance 49.8 46.7 57.2 59.3 56.5 °C/W
ψJT Junction-to-top characterization parameter 12.4 33.7 19.6 9.7 3.2 °C/W
ψJB Junction-to-board characterization parameter 49.3 46.4 56.8 58.9 56.0 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.

5.5 Electrical Characteristics: ULN2002A

TA = 25°C
ULN2002A
PARAMETER TEST FIGURE TEST CONDITIONS UNIT
MIN TYP MAX
VI(on) ON-state input voltage Figure 6-6 VCE = 2 V, IC = 300 mA 13 V
High-level output voltage after
VOH Figure 6-10 VS = 50 V, IO = 300 mA VS – 20 mV
switching
II = 250 μA, IC = 100 mA 0.9 1.1
Collector-emitter saturation
VCE(sat) Figure 6-4 II = 350 μA, IC = 200 mA 1 1.3 V
voltage
II = 500 μA, IC = 350 mA 1.2 1.6
VF Clamp forward voltage Figure 6-7 IF = 350 mA 1.7 2 V
Figure 6-1 VCE = 50 V, II = 0 50
ICEX Collector cutoff current VCE = 50 V, II = 0 100 μA
Figure 6-2
TA = 70°C VI = 6 V 500
II(off) OFF-state input current Figure 6-2 VCE = 50 V, IC = 500 μA 50 65 μA
II Input current Figure 6-3 VI = 17 V 0.82 1.25 mA
VR = 50 V TA = 70°C 100
IR Clamp reverse current Figure 6-6 μA
VR = 50 V 50
Ci Input capacitance VI = 0, f = 1 MHz 25 pF
5.6 Electrical Characteristics: ULN2003A and ULN2004A

TA = 25°C
TEST ULN2003A ULN2004A
PARAMETER TEST CONDITIONS UNIT
FIGURE MIN TYP MAX MIN TYP MAX
IC = 125 mA 5
IC = 200 mA 2.4 6
ON-state input IC = 250 mA 2.7

VI(on) Figure 6-6 VCE = 2 V V
voltage IC = 275 mA 7
IC = 300 mA 3
IC = 350 mA 8
High-level output
VOH voltage after Figure 6-10 VS = 50 V, IO = 300 mA VS – 20 VS – 20 mV
switching
II = 250 μA, IC = 100 mA 0.9 1.1 0.9 1.1
Collector-emitter
VCE(sat) Figure 6-5 II = 350 μA, IC = 200 mA 1 1.3 1 1.3 V
saturation voltage
II = 500 μA, IC = 350 mA 1.2 1.6 1.2 1.6
Figure 6-1 VCE = 50 V, II = 0 50 50
Collector cutoff
ICEX VCE = 50 V, II = 0 100 100 μA
current Figure 6-2
TA = 70°C VI = 6 V 500
Clamp forward IF = 350 mA
VF Figure 6-8 1.7 2 1.7 2 V
voltage
Off-state input VCE = 50 V,
II(off) Figure 6-3 IC = 500 μA 50 65 50 65 μA
current TA = 70°C,
VI = 3.85 V 0.93 1.35
VI = 12 V 1 1.45
Clamp reverse VR = 50 V 50 50
IR Figure 6-7 μA
current VR = 50 V TA = 70°C 100 100

5.6 Electrical Characteristics: ULN2003A and ULN2004A (continued)

TA = 25°C
TEST ULN2003A ULN2004A
Ci Input capacitance VI = 0, f = 1 MHz 15 25 15 25 pF
5.7 Electrical Characteristics: ULN2003AI

TA = 25°C
TEST ULN2003AI
PARAMETER TEST FIGURE UNIT
CONDITIONS MIN TYP MAX
IC = 200 mA 2.4
VI(on) ON-state input voltage Figure 6-6 VCE = 2 V IC = 250 mA 2.7 V
IC = 300 mA 3
switching
II = 250 μA, IC = 100 mA 0.9 1.1
VCE(sat) Collector-emitter saturation voltage Figure 6-5 II = 350 μA, IC = 200 mA 1 1.3 V
II = 500 μA, IC = 350 mA 1.2 1.6
ICEX Collector cutoff current Figure 6-1 VCE = 50 V, II = 0 50 μA
VF Clamp forward voltage Figure 6-8 IF = 350 mA 1.7 2 V
II Input current Figure 6-4 VI = 3.85 V 0.93 1.35 mA
IR Clamp reverse current Figure 6-7 VR = 50 V 50 μA
Ci Input capacitance VI = 0, f = 1 MHz 15 25 pF
5.8 Electrical Characteristics: ULN2003AI

TA = –40°C to 105°C
ULN2003AI
PARAMETER TEST FIGURE TEST CONDITIONS UNIT
MIN TYP MAX
IC = 200 mA 2.7
VI(on) ON-state input voltage Figure 6-6 VCE = 2 V IC = 250 mA 2.9 V
IC = 300 mA 3
switching
II = 250 μA, IC = 100 mA 0.9 1.2
VCE(sat) Collector-emitter saturation voltage Figure 6-5 II = 350 μA, IC = 200 mA 1 1.4 V
II = 500 μA, IC = 350 mA 1.2 1.7
ICEX Collector cutoff current Figure 6-1 VCE = 50 V, II = 0 100 μA
VF Clamp forward voltage Figure 6-8 IF = 350 mA 1.7 2.2 V
II Input current Figure 6-4 VI = 3.85 V 0.93 1.35 mA
IR Clamp reverse current Figure 6-7 VR = 50 V 100 μA
Ci Input capacitance VI = 0, f = 1 MHz 15 25 pF

5.9 Electrical Characteristics: ULQ2003A and ULQ2004A

over recommended operating conditions (unless otherwise noted)
TEST ULQ2003A ULQ2004A
IC = 125 mA 5
IC = 200 mA 2.7 6
ON-state input IC = 250 mA 2.9

VI(on) Figure 6-6 VCE = 2 V V
voltage IC = 275 mA 7
IC = 300 mA 3
IC = 350 mA 8
High-level output
VOH voltage after Figure 6-10 VS = 50 V, IO = 300 mA VS – 50 VS – 50 mV
switching
II = 250 μA, IC = 100 mA 0.9 1.2 0.9 1.1
Collector-emitter
VCE(sat) Figure 6-5 II = 350 μA, IC = 200 mA 1 1.4 1 1.3 V
saturation voltage
II = 500 μA, IC = 350 mA 1.2 1.7 1.2 1.6
Figure 6-1 VCE = 50 V, II = 0 100 50
Collector cutoff
ICEX VCE = 50 V, II = 0 100 μA
current Figure 6-2 T = 70°C
A VI = 6 V 500
Clamp forward
VF Figure 6-8 IF = 350 mA 1.7 2.3 1.7 2 V
voltage
OFF-state input VCE = 50 V,
II(off) Figure 6-3 IC = 500 μA 65 50 65 μA
current TA = 70°C,
VI = 3.85 V 0.93 1.35
VI = 12 V 1 1.45
Clamp reverse VR = 50 V TA = 25°C 100 50

IR Figure 6-7 μA
current VR = 50 V 100 100
Ci Input capacitance VI = 0, f = 1 MHz 15 25 15 25 pF
5.10 Switching Characteristics: ULN2002A, ULN2003A, ULN2004A

TA = 25°C
ULN2002A, ULN2003A,
PARAMETER TEST CONDITIONS ULN2004A UNIT
MIN TYP MAX
tPLH Propagation delay time, low- to high-level output See Figure 6-9 0.25 1 μs
tPHL Propagation delay time, high- to low-level output See Figure 6-9 0.25 1 μs
5.11 Switching Characteristics: ULN2003AI

TA = 25°C
ULN2003AI
MIN TYP MAX
tPLH Propagation delay time, low- to high-level output See Figure 6-9 0.25 1 μs
tPHL Propagation delay time, high- to low-level output See Figure 6-9 0.25 1 μs

5.12 Switching Characteristics: ULN2003AI

TA = –40°C to 105°C
ULN2003AI
MIN TYP MAX
tPLH Propagation delay time, low- to high-level output See Figure 6-9 1 10 μs
tPHL Propagation delay time, high- to low-level output See Figure 6-9 1 10 μs
5.13 Switching Characteristics: ULQ2003A, ULQ2004A

over recommended operating conditions (unless otherwise noted)
ULQ2003A, ULQ2004A
MIN TYP MAX
tPLH Propagation delay time, low- to high-level output See Figure 6-9 1 10 μs
tPHL Propagation delay time, high- to low-level output See Figure 6-9 1 10 μs

5.14 Typical Characteristics
VCE(sat)- Collector-Emitter Saturation Voltage - V

VCE(sat)- Collector-Emitter Saturation Voltage - V
10 1.8
II= 250μA II= 250μA
9
II= 350μA 1.6 II= 350μA
8 II= 500μA II= 500μA
7 1.4
6 1.2
5
4 1
3 0.8
2
0.6
1
0 0.4
0 50 100 150 200 250 300 350 400 450 500 0 100 200 300 400 500 600 700 800
IC- Collector Current - mA IC(tot)- Total Collector Current - mA
Figure 5-1. Collector-Emitter Saturation Voltage vs Collector Figure 5-2. Collector-Emitter Saturation Voltage vs Total
Current (One Darlington) Collector Current (Two Darlingtons in Parallel)
440 0.6
IC- Maximum Collector Current - A

N=1
N=2
400
IC- Collector Current - mA
0.5 N=3
N=4
360 N=5
0.4 N=6
320 N=7
280 0.3
240
0.2
200
VS=8V 0.1
160 VS=10V
120 0
90 100 110 120 130 140 150 0 10 20 30 40 50 60 70 80 90 100
II- Input Current - μA Duty Cycle - %
Figure 5-3. Collector Current vs Input Current Figure 5-4. D Package Maximum Collector Current vs Duty
Cycle (TA = 70°C)
0.6 1400
IC- Maximum Collector Current - A
N=1
N=2 −40°C
0.5 N=3
N=4
1200 25°C
105°C
Input Current - μA
N=5
0.4 N=6
N=7 1000
0.3 800
0.2 600
0.1
400
0
200
0 20 40 60 80 100
Duty Cycle - %
2 2.4 2.8 3.2 3.6 4 4.4 4.8 5.2
Input Voltage - V
Figure 5-5. DYY Package Maximum Collector Current vs Duty
Figure 5-6. Maximum and Typical Input Current vs Input Voltage
Cycle (TA = 70°C)

5.14 Typical Characteristics (continued)

2 520
−40°C
1.8 500
Maximum VCE(sat)Voltage - V
25°C
480
Output Current - mA
1.6 105°C
460
1.4
440
1.2
420
1
400
0.8 380 −40°C
25°C
0.6 360 105°C
0.4 340
0 100 200 300 400 500 250 300 350 400 450 500 550 600 650
Output Current - mA Input Current - µA
Figure 5-7. Maximum and Typical Saturated VCE vs Output Figure 5-8. Minimum Output Current vs Input Current
Current

6 Parameter Measurement Information
Open VCE Open VCE
ICEX ICEX
Open VI
Figure 6-1. ICEX Test Circuit Figure 6-2. ICEX Test Circuit
Open VCE Open
II(off) IC II(on)
VI Open
Figure 6-4. II Test Circuit
Figure 6-3. II(off) Test Circuit

Open Open
IC
hFE =
II
II VCE IC VI(on) VCE IC
II is fixed for measuring VCE(sat), variable for measuring hFE. Figure 6-6. VI(on) Test Circuit
Figure 6-5. hFE, VCE(sat) Test Circuit
VR
IR VF IF
Open
Open
Figure 6-8. VF Test Circuit
Figure 6-7. IR Test Circuit

200 W
Figure 6-9. Propagation Delay-Time Waveforms

≤5 ns ≤10 ns
VIH
Input 90% 90% (see Note C)
1.5 V 1.5 V
10% 10%
40 µs 0V
VOH
Output
VOL
VOLTAGE WAVEFORMS
The pulse generator has the following characteristics: PRR =

12.5 kHz, ZO = 50 Ω.
CL includes probe and jig capacitance.
For testing the ULN2003A device, ULN2003AI device, and
ULQ2003A devices, VIH = 3 V; for the ULN2002A device, VIH =
13 V; for the ULN2004A and the ULQ2004A devices, VIH = 8 V.
Figure 6-10. Latch-Up Test Circuit and Voltage
Waveforms

7 Detailed Description
7.1 Overview
This standard device has proven ubiquity and versatility across a wide range of applications. This is due to
integration of 7 Darlington transistors of the device that are capable of sinking up to 500 mA and wide GPIO
range capability.
The ULN2003A device comprises seven high-voltage, high-current NPN Darlington transistor pairs. All units
feature a common emitter and open collector outputs. To maximize their effectiveness, these units contain
suppression diodes for inductive loads. The ULN2003A device has a series base resistor to each Darlington pair,
thus allowing operation directly with TTL or CMOS operating at supply voltages of 5 V or 3.3 V. The ULN2003A
device offers solutions to a great many interface needs, including solenoids, relays, lamps, small motors, and
LEDs. Applications requiring sink currents beyond the capability of a single output may be accommodated by
paralleling the outputs.
This device can operate over a wide temperature range (–40°C to 105°C).
7.2 Functional Block Diagrams
All resistor values shown are nominal. The collector-emitter diode is a parasitic structure and should not be
used to conduct current. If the collectors go below GND, an external Schottky diode should be added to clamp
negative undershoots.
COM
Output C
7V 10.5 NŸ
Input B
7.2 NŸ 3 NŸ E
Figure 7-1. ULN2002A Block Diagram
COM COM
RB Output C RB Output C
2.7 NŸ 10.5 NŸ
Input B Input B
7.2 NŸ 3 NŸ E 7.2 NŸ 3 NŸ E
Figure 7-2. ULN2003A, ULQ2003A and ULN2003AI Figure 7-3. ULN2004A and LQ2004A Block Diagram
Block Diagram

7.3 Feature Description

Each channel of the ULN2003A device consists of Darlington connected NPN transistors. This connection
creates the effect of a single transistor with a very high-current gain (β2). This can be as high as 10,000 A/A
at certain currents. The very high β allows for high-output current drive with a very low input current, essentially
equating to operation with low GPIO voltages.
The GPIO voltage is converted to base current through the 2.7-kΩ resistor connected between the input and
base of the predriver Darlington NPN. The 7.2-kΩ and 3-kΩ resistors connected between the base and emitter of
each respective NPN act as pulldowns and suppress the amount of leakage that may occur from the input.
The diodes connected between the output and COM pin is used to suppress the kick-back voltage from an
inductive load that is excited when the NPN drivers are turned off (stop sinking) and the stored energy in the
coils causes a reverse current to flow into the coil supply through the kick-back diode.
In normal operation the diodes on base and collector pins to emitter will be reversed biased. If these diodes are
forward biased, internal parasitic NPN transistors will draw (a nearly equal) current from other (nearby) device
pins.
7.4 Device Functional Modes
7.4.1 Inductive Load Drive
When the COM pin is tied to the coil supply voltage, ULN2003A device is able to drive inductive loads and
suppress the kick-back voltage through the internal free-wheeling diodes.
7.4.2 Resistive Load Drive
When driving a resistive load, a pullup resistor is needed in order for ULN2003A device to sink current and for
there to be a logic high level. The COM pin can be left floating for these applications.

8 Application and Implementation

Note
Information in the following applications sections is not part of the TI component specification,
and TI does not warrant its accuracy or completeness. TI’s customers are responsible for
determining suitability of components for their purposes, as well as validating and testing their design
implementation to confirm system functionality.
8.1 Application Information

Typically, the ULN2003A device drives a high-voltage or high-current (or both) peripheral from an MCU or logic
device that cannot tolerate these conditions. This design is a common application of ULN2003A device, driving
inductive loads. This includes motors, solenoids and relays. Figure 8-1 shows a model for each load type.
8.2 Typical Application
3.3-V Logic ULN2003A
IN1 OUT1
IN2 OUT2
3.3-V Logic IN3 OUT3
IN4 OUT4
VSUP
3.3-V Logic IN5 OUT5
IN6 OUT6
IN7 OUT7
GND COM VSUP
Figure 8-1. ULN2003A Device as Inductive Load Driver
8.2.1 Design Requirements

For this design example, use the parameters listed in Table 8-1 as the input parameters.
Table 8-1. Design Parameters
DESIGN PARAMETER EXAMPLE VALUE
GPIO voltage 3.3 V or 5 V
Coil supply voltage 12 V to 48 V
Number of channels 7
Output current (RCOIL) 20 mA to 300 mA per channel
Duty cycle 100%

8.2.2 Detailed Design Procedure

When using ULN2003A device in a coil driving application, determine the following:
• Input voltage range
• Temperature range
• Output and drive current
• Power dissipation
8.2.2.1 Drive Current
The coil voltage (VSUP), coil resistance (RCOIL), and low-level output voltage (VCE(SAT) or VOL) determine the coil
current.
ICOIL = (VSUP – VCE(SAT)) / RCOIL (1)

8.2.2.2 Low-Level Output Voltage
The low-level output voltage (VOL) is the same as VCE(SAT) and can be determined by, Figure 5-1, Figure 5-2, or
Figure 5-7.
8.2.2.3 Power Dissipation and Temperature
The number of coils driven is dependent on the coil current and on-chip power dissipation. The number of coils
driven can be determined by Figure 5-4 or Figure 5-5.
For a more accurate determination of number of coils possible, use the below equation to calculate ULN2003A
device on-chip power dissipation PD:
N
PD = å VOLi ´ ILi
i=1 (2)
where
• N is the number of channels active together
• VOLi is the OUTi pin voltage for the load current ILi. This is the same as VCE(SAT)
To ensure reliability of ULN2003A device and the system, the on-chip power dissipation must be lower that or
equal to the maximum allowable power dissipation (PD(MAX)) dictated by below equation Equation 3.
TJ MAX TA
PD MAX
TJA (3)
where
• TJ(max) is the target maximum junction temperature
• TA is the operating ambient temperature
• RθJA is the package junction to ambient thermal resistance
Limit the die junction temperature of the ULN2003A device to less than 125°C. The IC junction temperature is
directly proportional to the on-chip power dissipation.

8.2.3 Application Curves

The characterization data shown in Figure 8-2 and Figure 8-3 were generated using the ULN2003A device
driving an OMRON G5NB relay and under the following conditions: VIN = 5 V, VSUP= 12 V, and RCOIL= 2.8 kΩ.
13 14
12
11 12
10
9 10
Output voltage - V
Output voltage - V
8
8
7
6
6
5
4 4
3
2 2
1
0 0
-0.004 0 0.004 0.008 0.012 0.016 -0.004 0 0.004 0.008 0.012 0.016
Time (s) D001
Time (s) D001
Figure 8-2. Output Response With Activation of Figure 8-3. Output Response With De-activation of
Coil (Turnon) Coil (Turnoff)

8.3 System Examples
VSS ULN2002A V
VCC ULQ2003A V
1 16
1 16
2 15
2 15
3 14
3 14
4 13
4 13
5 12
5 12
6 11
6 11
7 10
P-MOS 7 10
Output 8 9
8 9
Lam
TTL Test
Output
Figure 8-4. P-MOS to Load
Figure 8-5. TTL to Load
ULN2004A
VDD ULQ2004A V VCC ULQ2003A V
1 16 1 16
2 15 2 15
3 14 3 14
RP
4 13 4 13
5 12 5 12
6 11 6 11
7 10 7 10
8 9 8 9
CMOS
Output
TTL
Output
Figure 8-6. Buffer for Higher Current Loads Figure 8-7. Use of Pullup Resistors to Increase
Drive Current
8.4 Power Supply Recommendations

This device does not need a power supply. However, the COM pin is typically tied to the system power supply.
When this is the case, it is very important to ensure that the output voltage does not heavily exceed the COM
pin voltage. This discrepancy heavily forward biases the fly-back diodes and causes a large current to flow into
COM, potentially damaging the on-chip metal or over-heating the device.
8.5 Layout
8.5.1 Layout Guidelines
Thin traces can be used on the input due to the low-current logic that is typically used to drive ULN2003A device.
Take care to separate the input channels as much as possible, as to eliminate crosstalk. TI recommends thick
traces for the output to drive whatever high currents that may be needed. Wire thickness can be determined by
the current density of the trace material and desired drive current.

Because all of the channels currents return to a common emitter, it is best to size that trace width to be very
wide. Some applications require up to 2.5 A.
8.5.2 Layout Example
1B 1 16 1C
2B 2 15 2C
3B 3 14 3C
4B 4 13 4C
5B 5 12 5C
6B 6 11 6C
7B 7 10 7C
E 8 9 VCOM
GND
Figure 8-8. Package Layout

9 Device and Documentation Support

9.1 Documentation Support
9.1.1 Related Documentation
For related documentation, see the following:
SN7546x Darlington Transistor Arrays, SLRS023
9.2 Related Links
The table below lists quick access links. Categories include technical documents, support and community
resources, tools and software, and quick access to sample or buy.
Table 9-1. Related Links
TECHNICAL TOOLS & SUPPORT &
PARTS PRODUCT FOLDER SAMPLE & BUY
DOCUMENTS SOFTWARE COMMUNITY
ULN2002A Click here Click here Click here Click here Click here
ULN2003AI Click here Click here Click here Click here Click here
ULQ2003A Click here Click here Click here Click here Click here
ULQ2004A Click here Click here Click here Click here Click here
9.3 Receiving Notification of Documentation Updates

To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on
Notifications to register and receive a weekly digest of any product information that has changed. For change
details, review the revision history included in any revised document.
9.4 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
9.5 Trademarks
TI E2E™ is a trademark of Texas Instruments.
All trademarks are the property of their respective owners.
9.6 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
9.7 Glossary
TI Glossary This glossary lists and explains terms, acronyms, and definitions.
10 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.

Changes from Revision R (February 2024) to Revision S (June 2024) Page

• Added DYY package throughout the data sheet................................................................................................ 1
Changes from Revision Q (July 2022) to Revision R (February 2024) Page

• Updated all values in the Thermal Information section.......................................................................................4
11 Mechanical, Packaging, and Orderable Information

The following pages include mechanical packaging and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser based versions of this data sheet, refer to the left hand navigation.

PACKAGE OPTION ADDENDUM
www.ti.com 8-Oct-2024
PACKAGING INFORMATION
Orderable Device Status Package Type Package Pins Package Eco Plan Lead finish/ MSL Peak Temp Op Temp (°C) Device Marking Samples
(1) Drawing Qty (2) Ball material (3) (4/5)
(6)
ULN2002AN ACTIVE PDIP N 16 25 RoHS & Green NIPDAU N / A for Pkg Type -20 to 70 ULN2002AN Samples
ULN2002ANE4 ACTIVE PDIP N 16 25 RoHS & Green NIPDAU N / A for Pkg Type -20 to 70 ULN2002AN Samples
ULN2003AD OBSOLETE SOIC D 16 TBD Call TI Call TI -40 to 70 ULN2003A

ULN2003ADR ACTIVE SOIC D 16 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 70 ULN2003A Samples
ULN2003ADRG3 OBSOLETE SOIC D 16 TBD Call TI Call TI -40 to 70 ULN2003A

ULN2003ADYYR ACTIVE SOT-23-THIN DYY 16 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 70 UN2003A Samples
ULN2003AID OBSOLETE SOIC D 16 TBD Call TI Call TI -40 to 105 ULN2003AI

ULN2003AIDR ACTIVE SOIC D 16 2500 RoHS & Green NIPDAU | SN Level-1-260C-UNLIM -40 to 105 ULN2003AI Samples
ULN2003AIDRG4 OBSOLETE SOIC D 16 TBD Call TI Call TI -40 to 105 ULN2003AI

ULN2003AIN OBSOLETE PDIP N 16 TBD Call TI Call TI -40 to 105 ULN2003AIN
ULN2003AINSR ACTIVE SO NS 16 2000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 105 ULN2003AI Samples
ULN2003AIPW OBSOLETE TSSOP PW 16 TBD Call TI Call TI -40 to 105 UN2003AI

ULN2003AIPWR ACTIVE TSSOP PW 16 2000 RoHS & Green NIPDAU | SN Level-1-260C-UNLIM -40 to 105 (U2003AI, UN2003AI Samples
)
ULN2003AIPWRG4 OBSOLETE TSSOP PW 16 TBD Call TI Call TI -40 to 105 UN2003AI
ULN2003AN ACTIVE PDIP N 16 25 RoHS & Green NIPDAU | SN N / A for Pkg Type -40 to 70 ULN2003AN Samples
ULN2003ANE4 OBSOLETE PDIP N 16 TBD Call TI Call TI -40 to 70 ULN2003AN

ULN2003ANS OBSOLETE SO NS 16 TBD Call TI Call TI -40 to 70 ULN2003A
ULN2003ANSR ACTIVE SO NS 16 2000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 70 ULN2003A Samples
ULN2003ANSRE4 ACTIVE SO NS 16 2000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 70 ULN2003A Samples
ULN2003ANSRG4 ACTIVE SO NS 16 2000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 70 ULN2003A Samples
ULN2003APW OBSOLETE TSSOP PW 16 TBD Call TI Call TI -40 to 70 UN2003A

ULN2003APWR ACTIVE TSSOP PW 16 2000 RoHS & Green NIPDAU | SN Level-1-260C-UNLIM -40 to 70 UN2003A Samples
Addendum-Page 1
Orderable Device Status Package Type Package Pins Package Eco Plan Lead finish/ MSL Peak Temp Op Temp (°C) Device Marking Samples
(1) Drawing Qty (2) Ball material (3) (4/5)
(6)
ULN2003APWRG4 OBSOLETE TSSOP PW 16 TBD Call TI Call TI -40 to 70 UN2003A

ULN2004AD OBSOLETE SOIC D 16 TBD Call TI Call TI -20 to 70 ULN2004A
ULN2004ADR ACTIVE SOIC D 16 2500 RoHS & Green NIPDAU | SN Level-1-260C-UNLIM -20 to 70 ULN2004A Samples

ULN2004AN ACTIVE PDIP N 16 25 RoHS & Green NIPDAU N / A for Pkg Type -20 to 70 ULN2004AN Samples
ULN2004ANE4 ACTIVE PDIP N 16 25 RoHS & Green NIPDAU N / A for Pkg Type -20 to 70 ULN2004AN Samples
ULN2004ANSR ACTIVE SO NS 16 2000 RoHS & Green NIPDAU Level-1-260C-UNLIM -20 to 70 ULN2004A Samples
ULQ2003AD OBSOLETE SOIC D 16 TBD Call TI Call TI -40 to 85 ULQ2003A

ULQ2003ADG4 OBSOLETE SOIC D 16 TBD Call TI Call TI ULQ2003A
ULQ2003ADR OBSOLETE SOIC D 16 TBD Call TI Call TI -40 to 85 ULQ2003A
ULQ2003ADRG4 OBSOLETE SOIC D 16 TBD Call TI Call TI ULQ2003A
ULQ2003AN ACTIVE PDIP N 16 25 RoHS & Green NIPDAU N / A for Pkg Type -40 to 85 ULQ2003A Samples
ULQ2004AD ACTIVE SOIC D 16 40 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 ULQ2004A Samples
ULQ2004ADG4 ACTIVE SOIC D 16 40 RoHS & Green NIPDAU Level-1-260C-UNLIM ULQ2004A Samples
ULQ2004ADR ACTIVE SOIC D 16 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 ULQ2004A Samples
ULQ2004ADRG4 ACTIVE SOIC D 16 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM ULQ2004A Samples
ULQ2004AN ACTIVE PDIP N 16 25 RoHS & Green NIPDAU N / A for Pkg Type -40 to 85 ULQ2004AN Samples
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Addendum-Page 2
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF ULQ2003A, ULQ2004A :
• Automotive : ULQ2003A-Q1, ULQ2004A-Q1
NOTE: Qualified Version Definitions:
• Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects
Addendum-Page 3
PACKAGE MATERIALS INFORMATION
TAPE AND REEL INFORMATION
REEL DIMENSIONS TAPE DIMENSIONS

K0 P1
B0 W
Reel
Diameter
Cavity A0
A0 Dimension designed to accommodate the component width
B0 Dimension designed to accommodate the component length
K0 Dimension designed to accommodate the component thickness
W Overall width of the carrier tape
P1 Pitch between successive cavity centers
Reel Width (W1)

QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
Sprocket Holes
Q1 Q2 Q1 Q2
Q3 Q4 Q3 Q4 User Direction of Feed
Pocket Quadrants
*All dimensions are nominal

Device Package Package Pins SPQ Reel Reel A0 B0 K0 P1 W Pin1
Type Drawing Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
ULN2003ADR SOIC D 16 2500 330.0 16.4 6.5 10.3 2.1 8.0 16.0 Q1
ULN2003ADR SOIC D 16 2500 330.0 16.4 6.5 10.3 2.1 8.0 16.0 Q1
ULN2003ADR SOIC D 16 2500 330.0 16.4 6.5 10.3 2.1 8.0 16.0 Q1
ULN2003ADR SOIC D 16 2500 330.0 16.4 6.5 10.3 2.1 8.0 16.0 Q1
ULN2003ADYYR SOT-23- DYY 16 3000 330.0 12.4 4.8 3.6 1.6 8.0 12.0 Q3
THIN
ULN2003AIDR SOIC D 16 2500 330.0 16.4 6.5 10.3 2.1 8.0 16.0 Q1
ULN2003AIDR SOIC D 16 2500 330.0 16.4 6.5 10.3 2.1 8.0 16.0 Q1
ULN2003AIDR SOIC D 16 2500 330.0 16.4 6.5 10.3 2.1 8.0 16.0 Q1
ULN2003AINSR SO NS 16 2000 330.0 16.4 8.2 10.5 2.5 12.0 16.0 Q1
ULN2003AINSR SO NS 16 2000 330.0 16.4 8.45 10.55 2.5 12.0 16.2 Q1
ULN2003AIPWR TSSOP PW 16 2000 330.0 12.4 6.9 5.6 1.6 8.0 12.0 Q1
ULN2003AIPWR TSSOP PW 16 2000 330.0 12.4 6.9 5.6 1.6 8.0 12.0 Q1
ULN2003ANSR SO NS 16 2000 330.0 16.4 8.45 10.55 2.5 12.0 16.2 Q1
ULN2003ANSR SO NS 16 2000 330.0 16.4 8.2 10.5 2.5 12.0 16.0 Q1
ULN2003APWR TSSOP PW 16 2000 330.0 12.4 6.9 5.6 1.6 8.0 12.0 Q1
Pack Materials-Page 1
Device Package Package Pins SPQ Reel Reel A0 B0 K0 P1 W Pin1

Type Drawing Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
ULN2003APWR TSSOP PW 16 2000 330.0 12.4 6.9 5.6 1.6 8.0 12.0 Q1
ULN2004ADR SOIC D 16 2500 330.0 16.4 6.5 10.3 2.1 8.0 16.0 Q1
ULN2004ADR SOIC D 16 2500 330.0 16.4 6.5 10.3 2.1 8.0 16.0 Q1
ULN2004ANSR SO NS 16 2000 330.0 16.4 8.2 10.5 2.5 12.0 16.0 Q1
TAPE AND REEL BOX DIMENSIONS
Width (mm)
H
W

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
ULN2003ADR SOIC D 16 2500 356.0 356.0 35.0
ULN2003ADR SOIC D 16 2500 340.5 336.1 32.0
ULN2003ADR SOIC D 16 2500 353.0 353.0 32.0
ULN2003ADR SOIC D 16 2500 353.0 353.0 32.0
ULN2003ADYYR SOT-23-THIN DYY 16 3000 336.6 336.6 31.8
ULN2003AIDR SOIC D 16 2500 353.0 353.0 32.0
ULN2003AIDR SOIC D 16 2500 353.0 353.0 32.0
ULN2003AIDR SOIC D 16 2500 340.5 336.1 32.0
ULN2003AINSR SO NS 16 2000 356.0 356.0 35.0
ULN2003AINSR SO NS 16 2000 353.0 353.0 32.0
ULN2003AIPWR TSSOP PW 16 2000 356.0 356.0 35.0
ULN2003AIPWR TSSOP PW 16 2000 353.0 353.0 32.0
ULN2003ANSR SO NS 16 2000 353.0 353.0 32.0
ULN2003ANSR SO NS 16 2000 356.0 356.0 35.0
ULN2003APWR TSSOP PW 16 2000 356.0 356.0 35.0
ULN2003APWR TSSOP PW 16 2000 353.0 353.0 32.0
ULN2004ADR SOIC D 16 2500 340.5 336.1 32.0
ULN2004ADR SOIC D 16 2500 353.0 353.0 32.0
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
ULN2004ANSR SO NS 16 2000 356.0 356.0 35.0
TUBE
T - Tube
height L - Tube length
W - Tube
width
B - Alignment groove width

Device Package Name Package Type Pins SPQ L (mm) W (mm) T (µm) B (mm)
ULN2002AN N PDIP 16 25 506 13.97 11230 4.32
ULN2002ANE4 N PDIP 16 25 506 13.97 11230 4.32
ULN2003AN N PDIP 16 25 506 13.97 11230 4.32
ULN2003AN N PDIP 16 25 506 13.97 11230 4.32
ULN2003AN N PDIP 16 25 506.1 9 600 5.4
ULN2004AN N PDIP 16 25 506 13.97 11230 4.32
ULN2004AN N PDIP 16 25 506 13.97 11230 4.32
ULN2004ANE4 N PDIP 16 25 506 13.97 11230 4.32
ULN2004ANE4 N PDIP 16 25 506 13.97 11230 4.32
ULQ2003AN N PDIP 16 25 506 13.97 11230 4.32
ULQ2003AN N PDIP 16 25 506 13.97 11230 4.32
ULQ2004AD D SOIC 16 40 507 8 3940 4.32
ULQ2004ADG4 D SOIC 16 40 507 8 3940 4.32
ULQ2004AN N PDIP 16 25 506 13.97 11230 4.32
PACKAGE OUTLINE
NS0016A SCALE 1.500
SOP - 2.00 mm max height
SOP
8.2 SEATING PLANE

TYP
7.4
A PIN 1 ID 0.1 C
AREA
14X 1.27
16
1
10.4 2X
10.0 8.89
NOTE 3
8
9
0.51
16X
5.4 0.35
B 0.25 C A B 2.00 MAX
5.2
NOTE 4
0.15 TYP
SEE DETAIL A
0.25 0.3
GAGE PLANE 0.1
0 - 10
1.05
0.55 DETAIL A
TYPICAL
(1.25)
4220735/A 12/2021
NOTES:
1. All linear dimensions are in millimeters. Dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed 0.15 mm, per side.
4. This dimension does not include interlead flash. Interlead flash shall not exceed 0.25 mm, per side.
www.ti.com
EXAMPLE BOARD LAYOUT
NS0016A SOP - 2.00 mm max height
SOP
16X (1.85) SEE

SYMM DETAILS
1 16
16X (0.6)
SYMM
14X (1.27)
8 9
(R0.05) TYP
(7)
LAND PATTERN EXAMPLE

SCALE:7X
SOLDER MASK SOLDER MASK METAL

METAL OPENING OPENING
0.07 MAX 0.07 MIN

ALL AROUND ALL AROUND
NON SOLDER MASK SOLDER MASK

DEFINED DEFINED
SOLDER MASK DETAILS
4220735/A 12/2021
NOTES: (continued)
5. Publication IPC-7351 may have alternate designs.

6. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
www.ti.com
EXAMPLE STENCIL DESIGN
NS0016A SOP - 2.00 mm max height
SOP
16X (1.85) SYMM
1 16
16X (0.6)
SYMM
14X (1.27)
8 9
(R0.05) TYP (7)
SOLDER PASTE EXAMPLE

BASED ON 0.125 mm THICK STENCIL
SCALE:7X
4220735/A 12/2021
NOTES: (continued)
7. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
8. Board assembly site may have different recommendations for stencil design.
www.ti.com
PACKAGE OUTLINE
PW0016A SCALE 2.500
TSSOP - 1.2 mm max height
SMALL OUTLINE PACKAGE
SEATING
PLANE
6.6 C
TYP
A 6.2
0.1 C
PIN 1 INDEX AREA
14X 0.65
16
1
2X
5.1 4.55
4.9
NOTE 3
8
9
0.30
4.5 16X 1.2 MAX
B 0.19
4.3
NOTE 4 0.1 C A B
(0.15) TYP
SEE DETAIL A
0.25
GAGE PLANE
0.15
0.05
0.75
0.50
0 -8
DETAIL A
A 20
TYPICAL
4220204/A 02/2017
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed 0.15 mm per side.
4. This dimension does not include interlead flash. Interlead flash shall not exceed 0.25 mm per side.
5. Reference JEDEC registration MO-153.
www.ti.com
PW0016A TSSOP - 1.2 mm max height
16X (1.5) SYMM

(R0.05) TYP
1
16X (0.45) 16
SYMM
14X (0.65)
8 9
(5.8)

EXPOSED METAL SHOWN
SCALE: 10X
SOLDER MASK METAL UNDER SOLDER MASK

METAL SOLDER MASK OPENING
OPENING
EXPOSED METAL EXPOSED METAL
0.05 MAX 0.05 MIN

ALL AROUND ALL AROUND
NON-SOLDER MASK SOLDER MASK

DEFINED DEFINED
(PREFERRED) SOLDER MASK DETAILS
15.000
4220204/A 02/2017
NOTES: (continued)

www.ti.com
PW0016A TSSOP - 1.2 mm max height
16X (1.5) SYMM

(R0.05) TYP
1
16X (0.45) 16
SYMM
14X (0.65)
8 9
(5.8)

SCALE: 10X
4220204/A 02/2017
NOTES: (continued)
www.ti.com
PACKAGE OUTLINE
DYY0016A SOT-23-THIN - 1.1 mm max height
PLASTIC SMALL OUTLINE
3.36 C
3.16 SEATING PLANE
A PIN 1 INDEX
AREA 0.1 C
14X 0.5
1 16
4.3 2X
4.1
NOTE 3 3.5
4X 0° - 15°
8
9
2.1 16X 0.3

0.11
1.1 MAX
B 1.9
0.1 C A B
4X 4° - 15°
0.2 TYP
0.08
SEE DETAIL A
0.25
GAUGE PLANE
0°- 8°
0.63 0.1
0.33 0.0
DETAIL A
TYP
4224642/D 07/2024
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not exceed
0.15 per side.
4. This dimension does not include interlead flash. Interlead flash shall not exceed 0.50 per side.
5. Reference JEDEC Registration MO-345, Variation AA
www.ti.com
16X (1.05)
SYMM
1 16
16X (0.3)
SYMM
14X (0.5)
8 9
(R0.05) TYP
(3)

EXPOSED METAL SHOWN
SCALE: 20X
SOLDER MASK METAL UNDER

OPENING SOLDER MASK SOLDER MASK
METAL OPENING
NON- SOLDER MASK SOLDER MASK

DEFINED DEFINED
(PREFERRED)
SOLDER MASK DETAILS
4224642/D 07/2024
NOTES: (continued)

www.ti.com
16X (1.05)
SYMM
1 16
16X (0.3)
SYMM
14X (0.5)
8 9
(R0.05) TYP
(3)

SCALE: 20X
4224642/D 07/2024
NOTES: (continued)
www.ti.com
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TI PROVIDES TECHNICAL AND RELIABILITY DATA (INCLUDING DATA SHEETS), DESIGN RESOURCES (INCLUDING REFERENCE
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IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD
PARTY INTELLECTUAL PROPERTY RIGHTS.
These resources are intended for skilled developers designing with TI products. You are solely responsible for (1) selecting the appropriate
TI products for your application, (2) designing, validating and testing your application, and (3) ensuring your application meets applicable
standards, and any other safety, security, regulatory or other requirements.
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TI objects to and rejects any additional or different terms you may have proposed. IMPORTANT NOTICE
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Copyright © 2024, Texas Instruments Incorporated

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ULN2002A, ULN2003A, ULN2003AI

ULQ2003A, ULN2004A, ULQ2004A

ULN200x, ULQ200x High-Voltage, High-Current Darlington Transistor Arrays

2 Submit Document Feedback Copyright © 2024 Texas Instruments Incorporated

Product Folder Links: ULN2002A ULN2003A ULN2003AI ULQ2003A ULN2004A ULQ2004A

4 Pin Configuration and Functions

Table 4-1. Pin Functions

(1) I = Input, O = Output

Copyright © 2024 Texas Instruments Incorporated Submit Document Feedback 3

5.2 ESD Ratings

Electrostatic Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000

5.3 Recommended Operating Conditions

5.4 Thermal Information

4 Submit Document Feedback Copyright © 2024 Texas Instruments Incorporated

Product Folder Links: ULN2002A ULN2003A ULN2003AI ULQ2003A ULN2004A ULQ2004A

5.5 Electrical Characteristics: ULN2002A

5.6 Electrical Characteristics: ULN2003A and ULN2004A

ON-state input IC = 250 mA 2.7

Copyright © 2024 Texas Instruments Incorporated Submit Document Feedback 5

5.6 Electrical Characteristics: ULN2003A and ULN2004A (continued)

5.7 Electrical Characteristics: ULN2003AI

5.8 Electrical Characteristics: ULN2003AI

6 Submit Document Feedback Copyright © 2024 Texas Instruments Incorporated

Product Folder Links: ULN2002A ULN2003A ULN2003AI ULQ2003A ULN2004A ULQ2004A

5.9 Electrical Characteristics: ULQ2003A and ULQ2004A

ON-state input IC = 250 mA 2.9

Clamp reverse VR = 50 V TA = 25°C 100 50

5.10 Switching Characteristics: ULN2002A, ULN2003A, ULN2004A

5.11 Switching Characteristics: ULN2003AI

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5.12 Switching Characteristics: ULN2003AI

5.13 Switching Characteristics: ULQ2003A, ULQ2004A

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5.14 Typical Characteristics

VCE(sat)- Collector-Emitter Saturation Voltage - V

IC- Maximum Collector Current - A

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5.14 Typical Characteristics (continued)

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6 Parameter Measurement Information

Open VCE Open VCE

Figure 6-4. II Test Circuit

Figure 6-3. II(off) Test Circuit

II VCE IC VI(on) VCE IC

Figure 6-7. IR Test Circuit

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Figure 6-9. Propagation Delay-Time Waveforms

The pulse generator has the following characteristics: PRR =

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Figure 7-1. ULN2002A Block Diagram

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7.3 Feature Description

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8 Application and Implementation

8.1 Application Information