Ch. 1 GATE EE PYQ's Analog
Ch. 1 GATE EE PYQ's Analog
Ch. 1 GATE EE PYQ's Analog
ELECTRICAL ENGINEERING
Electrical
2001 - 2024
GATE Previous Year Questions
Website : www.engineerscareerpoint.com
Contents
ANALOG ELECTRONICS
GATE Solved Questions
1
DIODE CIRCUIT
1. The cut-in voltage of both zener diode Dz and D shown in Figure is 0.7 V, while breakdown voltage of
the zener is 3.3 V and reverse break down of D is 5 V. The other parameters can be assumed to be
the same as those of an ideal diode. The values of the peak output voltage (V0) are
1k
I
1k
~ 10sint V0
=314 rad/sec
(a) 3.3 V in the positive half cycle and 1.4 V in the negative half cycle.
(b) 4 V in the positive half cycle and 5 V in the negative half cycle.
(c) 3.3 V in the both positive and negative half cycle.
(d) 4 V in the both positive and negative half cycle.
[1 Mark : GATE-2002]
2. The forward resistance of the diode shown in figure is 5 and the remaining parameters are same as
those of ideal diode. The DC component of the source current is
D
Vi ~ 45
Vi = Vm sin t
= 314 rad/sec
Vm Vm Vm 2Vm
(a) (b) (c) (d)
50 50 2 100 2 50 2
[1 Mark : GATE-2002]
3. In the single phase diode bridge rectifier shown in figure, the load resistor is R = 50. The source
voltage is V = 200 sin t, where = 2 × 50 rad/sec. The power dissipated in the load resistor R is
R
V ~ A
B
3200 400
(a) W (b) 400 W (c) W (d) 800 W
[2 Marks : GATE-2002]
2 GATE Previous Solved Questions
4. A voltage signal 10 sin t is applied to the circuit with ideal diodes as shown in figure. The maximum
and minimum values of the output waveform of the circuit are respectively
10K
+
D1 D2
~ Vi 4V
4V
V0
10K
–
(a) +10V and –10V (b) +4V and –4V
(c) +7V and –4V (d) +4V and –7V
[2 Marks : GATE-2003]
5. The current through the zener diode in the given circuit is
2.2K
+
Iz
10V RL 3.5V
VZ = 3.3V
RZ = 100 –
1K 1K
D2
5V D1
8V
D1
2k
1mA
(DC) I
D2 2k
D2
1 5A
D1 D3
10V
2 D2
RL=
Vi
10V 5V
Vo Vo
10
10
(a) (b) 5
Vi Vi
10 5 10
Vo Vo
10
(c) (d)
5
Vi 10 Vi
5
[2 Marks : GATE-2006]
10. The equivalent circuits of a diode, during forward and reverse bias, is shown in figure.
0.7V
+ – + –
– + – +
10k
10sint ~ V0 10k
5V
4 GATE Previous Solved Questions
If such diodes are used in the clipper circuit of figure given above, the output voltage (V0) of the circuit
will be
+5V +5.7V
(a) t (b) t
–5V –10V
10V +5.7V
(c) t (d) t
–5.7V –5V
[1 Mark : GATE-2008]
11. In the voltage doubler circuit shown in figure, the switch ‘S’ is closed at t = 0. Assuming diodes D1 &
D2 to be ideal, load resistance to be infinite and initial capacitor voltages to be zero, the steady state
voltage across capacitors C1 & C2 will be
t=0 Vc1 D2
+ –
S C1 +
5sint ~ D1 C2
–
Vc2 Rload
a b
VS +
– R 10k
15 1.5
10 1.0
Current (mA)
VS(volts)
5 0.5
0 0
-5 -0.5
-10 -1.0
-15 -1.5
0 100 200 300 400 0 100 200 300 400
Time (ms) Time (ms)
ANALOG Soil Mechanics & Foundation
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5
The element connected between ‘a’ and ‘b’ could be
(a) a b (b) a b
(c) a b (d)
a b
[1 Mark : GATE-2009]
13. Assuming that the diodes are ideal in the given circuit, the voltage V0 is
10k
D1 D2
10k
10V V0 15V
10k
1K
+
D
Vi ~ Vz =10V – Vo
5V
Assuming forward voltage drops of the diodes to be 0.7V, the input-output transfer characteristics of the
circuit is
V0 V0
10V
4.3V
(a) 4.3V (b)
Vi Vi
4.3V 4.3V
V0
V0
10V
5.7V -5.7V
(c) (d)
Vi
-0.7V 10V
Vi
0.7V 5.7V -5.7V
[2 Marks : GATE-2011]
6 GATE Previous Solved Questions
15. The i-v characteristics of the diode in the circuit given below are
v 0.7
A, v 0.7V
i 500
0A, v 0.7V
1k
i
+ +
10V V
– –
100
IL
10V
Vz = 5V RL
(a) 125 and 125 (b) 125 and 250 (c) 250 and 125 (d) 250 and 250
[2 Marks: GATE-2013]
17. A voltage 1000 sin t Volts is applied across YZ. Assuming ideal diodes, the voltage measured across
WX in Volts is
1k
W X
Y
Z
1k
RS
20 V 5V RL
1/4W
2
[1 Mark : GATE-2014]
19. Assuming the diodes to be ideal in the figure, for the output to be clipped, the input voltage vi must be
outside the range
10k
vi 10k v
o
1V 2V
(a) –1 V to –2 V (b) –2 V to –4 V
(c) +1 V to –2 V (d) +2 V to –4 V
[2 Marks : GATE-2014]
20. A non-ideal diode is biased with a voltage of -00.03 V, and a diode current of I1 is measured. The thermal
voltage is 26m V and the ideality factor for the diode is 15/13. The voltage, in V, at which the measured
current increases to 1.5I1 is closest to
(A) -4.50 (B) -0.09
(C) -0.02 (D) -1.50
[2020 : 2 Marks]
21. Consider the diode circuit shown below. The diode, D, obeys the current-voltage characteristic
V
ID IS exp D 1 , +
nVT
where n > 1, VT > 0, VD is the voltage across the diode and ID is the current through it. The circuit is
biasedso that voltage, V > 0 and current, l < 0. If you had to design this circuit to transfer maximum
power fromthe current source (I1) to a resistive load (not shown) at the output, what values R1 and R2
would you choose?
8 GATE Previous Solved Questions
[2021 : 1 Marks]
23. For the circuit shown below with ideal diodes, the output will be
(A) Vout = Vin for Vin > 0 (B) Vout = Vin for Vin < 0
(C) Vout = -Vin for Vin > 0 (D) Vout = -Vin for Vin < 0
[2022 : 1 Marks]
24. All the elements in the circuit shown in the following figure are ideal. Which of the following statements
is/are true?
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9
(A) When switch S is ON, both D1 and D2 conducts and D3 is reverse biased.
(B) When switch S is ON, D1 conducts and both D2 and D3 are reverse biased.
(C) When switch S is OFF, D1 is reverse biased and both D2 and D3 conduct.
(D) When switch S is OFF, D1 conducts, D2 is reverse biased and D3 conducts
[2023 : 2 Marks]
10 GATE Previous Solved Questions
SOLUTIONS
SOLUTIONS
1. Ans. (b) DC component is
During the positive half cycle, when Vi > 4 V
Vm
zener diode is replaced by V2 (ON) & D is V
replaced by 0.7 V IdC = 50 m
50
1k
+ During negative half cycle,
3.3V Diode is reverse biased & is replaced by open
Vi ~ 0.7
1k Vo=4V circuit.
–
I= 0
Zener diode becomes forward biased and PN The given circuit can be redrawn as
junction diode becomes reverse biased, then
1k
D1 D4
+
R
Vi ~ Vo ~ C D
1k
– D2 D3
Vi B
Vo =
2
= 5sin t R
Vomax = –5V V(t) ~ i(t)
2. Ans. (a)
During positive half cycle,
During the positive half cycle of the input then
Diode is forward biased & is replaced by 5
D1 & D3 – ON, short circuit
5
D2 & D4 – Off open circuit
V t 200sin t
Vi ~ 45 i(t) =
R 50
= 4 sin t Amp.
Vi During the negative half cycle of the input,
D1 & D3 – Off open circuit
D2 & D4 – ON short circuit
I
V(t) ~ R
Vi V t
i(t) = i(t) = 4sin t
50 R
Vm In full wave rectifier, power dissipated in the
i(t) = sin t
50 load resistor R is
ANALOG Soil Mechanics & Foundation
EE Engg.
11
V(t) 5. Ans. (c)
Given that Vo= 3.5V
t
0
VZ = 3.3V
~ Vi 4V 4V Vo=4V
10k
– V1 5 V1 8 = 0
For negative half cycle, D1 ON, & D2OFF
2V1 = –3
10 k
V1 = –1.5V
+
D1 is Reverse biased
I
Vi ~ 4V Vo
ID1 = 0
10 k
– 7. Ans. (a)
Vi – 10I + 4 – 10I = 0 The current always search the low resistance
path. D1-ON and D2-OFF.
Vi 4 The I directed from N type to P–type of D2
I= mA
20 (D2–R.B) As D2 is reverse biased & is replaced
When Vi = –10V (maximum negative value) by open circuit.
I =0
6
I= mA
20
Vo + 4 – 10I = 0
Vo = 10I – 4
6
= 10 4
20
= 3 4 Vo 7V
12 GATE Previous Solved Questions
in parallel and voltage across them must be same.
D1 2k So that the value of output voltage from potential
1mA divider network is
(DC) I
D2 2k
10 Vi
Vo = Vi Vo 5sin t
10 10 2
8. Ans. (a)
Therefore, voltage across diode is always less
In the given circuit, we can analyse that the
than 0 V, VD < 0 i.e., diode is reverse biased for
diodes
the given input. V0 = 5 sint
1K
11. Ans. (d)
1K At t = 0, switch is closed and During the positive
D2 half cycle of input,
10V 1K 5A
D1 D1 is forward biased & D2 is reverse biased
‘C’, will charge upto +5V
D1 – ON VC1 = 5V
D2 – ON & + –
D3 – OFF then +
But no current flows through D2 because current –
~ Vi
5.7V
–0.7V
Vi Given, knee current of zener diode,
0.7V 5.7V
Iz knee = 10 mA
Then, Vo = –0.7V Current supplied by source,
When Vi > –0.7V, diode will be off and zener
diode get reverse biased. Vs Vz 10 5
Is = 50mA
Rs 100
Then, V0 = Vi
15. Ans. (d) Maximum load current
i – v characteristic of the diode : IL max = Is – Iz knee
IL max = 50 – 10 = 40 mA
v 0.7
i= A, v 0.7V ...(1) Minimum load resistance,
500
From the given circuit, Loop equation : Vz 5
RL = I 125
min
L max 40 103
v = 10 – 1000 i, v 0.7V ...(2)
Maximum current in zener diode = Iz max
14 GATE Previous Solved Questions
Maximum power dissipation of Zener diode 19. Ans. (b)
determines the minimum power rating of zener Case-I: Vi – 4V
diode. Maximum current in Zener diode gives
maximum power dissipation in diode which occurs D2 ON
when load current is zero. Maximum current in D1 OFF
diode flows when load is open circuited.
So, Vo = –2V
Maximum current in Zener diode,
Case-II: –4 V Vi –2 V
Iz max = Is = 50 mA
Both the diodes will be OFF.
Maximum power dissipation in zener diode,
PD = Vz Iz Vo = V1'
max max
Vi min Vz
I z min I L max
Rs
For ideal zener diode, Iz min = 0
Vi min Vz 65
I L max I L max
Rs 6
1
IL max A
6
Vz 5
R 0min 30
I L max 1/ 6
D3 off by observation