1) MOSFET DC Biasing: Design is Compulsory

VDD 15V
Sr. Parameter Theoretical Practical Observations:
No. value Value
RD 470Ω VGS= , VDS = , VD=
1 VDS 5V
R1 +
200kΩ 0.016 A ID
-
2 ID 2mA
D
MOSFET 𝑉𝐷𝐷 −𝑉𝐷
G
+
5.010 V VDS 3 VGS -1.65V ID = 𝐼𝐷
2N7000 -
+
2.566 V
-
S
VGS
R2 100kΩ 150Ω
Rs

2) CS Amplifier (Implementation):

VDD 1) Measurement of Av :
15V Vin= 100 mvpp, 1KHz, Vo=
CRO/DSO 𝑉
RD
XSC1 Av= 𝑉𝑖𝑛
𝑜
470Ω Ext Trig
+
_
Function Generator A B
_ _
XFG1 R1 Cout + +

200kΩ
Probe2
Q1 10µF
Cin V(p-p): 2.67 V
Freq.: 1.00 kHz
V(p-p): 100 mV Probe3 Vo
10µF 2N7000
Freq.: 1.00 kHz
2) Measurement of Ri :
CS
R2 RS 100µF
100kΩ 150Ω ➢ Connect the 1MΩ resistor in between input from
function generator and capacitor Cin. Measure the
output voltage= V0’
𝑉′
➢ Calculate, Ro=𝑉 −𝑉0′ * 1 MΩ
0 0
3) Measurement of Ro : ➢ Ri ≈ 1MΩ
➢ Connect the 10KΩ resistor in between output capacitor
Cout and ground. Measure the output voltage= V0’’ Sr. Parameter Theoretical Practical
𝑉 −𝑉 ′′
➢ Calculate, Ro= 0𝑉 ′′ 0 * 10 KΩ No. value Value
0
➢ Ro ≈ 1.5 KΩ
1 Av 4.5

NOTE: Practical value of 2 Ri 1 MΩ

Av≈4.5, Ri ≈1 MΩ, Ro≈1.5
KΩ 3 Ro 1.5 KΩ

Observations:

Vin= ; Vo= , Vo’= , Vo’’=

 3) CS Amplifier _BW(Simulation):

Vin = 100 mvp, 1 KHz

Sr. Parameter Observed

No. Value

1 FH

2 FL

3 BW = FH-FL

4)Current Series Feedback Amplifier(Simulation):

Procedure is same as of 2) above

VDD
15V
CRO/DSO
XSC1
RD
470Ω
Ext T rig
+
_
Function Generator A B
+ _ + _
XFG1 R1 Cout
200kΩ
Probe2
10µF
Q1
V(p-p): 281 mV
Cin

Probe1
10µF 2N7000 V''o
V(p-p): 100 mV

switch CS
R2 RS 100µF
100kΩ 150Ω

Observations: Sr. Parameter Without With

No. Feedback Feedback
Sr.No. Parameter Without With (Without
Feedback Feedback (WithCS) CS)
(With Cs) (Without Cs)
1 Vin 1 Av Av= Avf=
2 Vo
3 Vo’ 2 Ri Ri= Rif=
4 Vo’’
3 Ro Ro= Rof=
NOTE: Avf < Av; Rif > Ri ; Rof > Ro
 5)& 13) Hartley Oscillator (Simulation):

Sr. LC Theoretical Simulated

No. Oscillator Frequency Frequency

1 Hartley 1MHZ
Oscillator

1
f=2𝜋 where 𝐿𝑒𝑞=𝐿1 +𝐿2
√𝐿𝑒𝑞 𝐶

6)& 14) Colpitt’s Oscillator (Simulation):

Sr. LC Theoretical Simulated

No. Oscillator Frequency Frequency

1 Collpit’s 50KHZ
Oscillator

1
f= where 𝐶𝑒𝑞= 𝐶1 𝐶2
2𝜋√𝐿 𝐶𝑒𝑞 𝐶1 +𝐶2

Sr. TheoreticalFrequency Simulate

7) Simulate Phase Shift Oscillator: No. Oscillator Frequen

1 Phase 1KHz
VDD
20V XSC1

RD
8kΩ
Ext T rig

_
+
Shift
Oscillator
A B
+ _ + _

6 0

Probe1
Q1 Freq.: 1.10 kHz

BFW10*
2

RS CS
3.3kΩ 1µF

C3 C2 C1 1
4 3 1
f=2𝜋𝑅𝐶 where R=R1=R2=R3 &
6.5nF 6.5nF 6.5nF √6
R3 R2 R1
C=C1=C2=C3
10kΩ 10kΩ 10kΩ

0
8) CMOS inverter and NOR gate using IC CD4007C:

CMOS Inverter:

Input Output
A Vo
0 1
1 0

CMOS NOR:

Input Input Output

A B Vo
0 0 1
0 1 0
1 0 0
1 1 0

9) CMOS inverter and NAND gate using IC CD4007C:

CMOS Inverter :Same as in 7) above
CMOS NAND Gate:

Input Output
A B Y
0 0 1
0 1 1
1 0 1
1 1 0
 10) MOSFET Switch (Implementation) :
Sr.
Parameter VDS ID LED MOSFET
No.

1 Vin=0V 1.788V 9.732mA ON OFF

Switch

2 Vin=5V 470.97μV 15.10mA OFF ON Switch

11) Positive Voltage Regulator using LM317 for Vo=7 V :

➢ Design is compulsory
➢ R1=240 Ω, No need to connect Cin
and Cout.
➢ R2= 1K Ω
Sr.No. Vin(V) Vo(V)
1 10
2
3
4
5

12) Positive Voltage Regulator using LM317 for Vo=12 V :

➢ Design is compulsory
➢ R1=240 Ω, No need to connect Cin
and Cout.
➢ R2= 2.2 KΩ OR 1.8 KΩ
Sr.No. Vin(V) Vo(V)
1 15
2
3
4
5