SKY77590-51 Skyworks Solutions

PRELIMINARY DATA SHEET
SKY77590-51 Tx-Rx FEM for Quad-Band GSM/ GPRS/ EDGE

with Six Linear TRx Switch Ports and Dual-Band TD-SCDMA
Applications Description
• Quad-band GSM/EDGE and Dual- SKY77590-51 is a transmit and receive Front End Module (FEM) designed in a very low profile
Band TD-SCDMA cellular handsets (0.9 mm) and compact form factor for quad-band cellular handsets comprising GSM850/900,
encompassing
- Class 4 GSM850/900 DCS1800, and PCS1900 operation and dual-band TD-SCDMA bands 34 and 39 operation — a
- Class 1 DCS1800/PCS1900 complete transmit VCO-to-Antenna and Antenna-to-receive SAW filter solution. The FEM also
- Class 12 GPRS supports Class 12 General Packet Radio Service (GPRS) multi-slot operation and linear EDGE
multi-slot operation operation. 3G switch-through support is provided by six dedicated high-linearity ports.
- 6 low insertion loss / high
linearity interchangeable TRx
switch ports The module consists of a GSM850/900 PA and DCS1800/PCS1900/TD-SCDMA PA block,
- Linear EDGE operation impedance-matching circuitry for 50 Ω input and output impedances, Tx harmonic filtering, a
- TD-SCDMA Bands 34/39 high linearity/low insertion loss switch, and a CMOS Power Amplifier Control (PAC) block. A
custom silicon integrated circuit contains decoder circuitry to control the RF switch while
Features providing a low current, external control interface.
• Small, low profile package
- 6 mm x 6 mm x 0.85 mm Fabricated in InGaP/GaAs, the Heterojunction Bipolar Transistor (HBT) PA blocks support the
- 28-pad configuration GSM850/900 bands and DCS1800/PCS1900 bands and TD-SCDMA bands 34/39. Both PA
• Low input power range blocks share common power supply pads to distribute current. The output of the PA block and
–1 dBm to 6 dBm the outputs to the six receive pads connect to the antenna pad through a high-linearity antenna
• High efficiency switch. The 3G and Rx ports feature a 0 volts DC offset level which eliminates the need for
- 40% GSM850
external blocking capacitors. The InGaP/GaAs die, switch die, Silicon (Si) controller die, and
- 40% GSM900
- 35% DCS1800 passive components are mounted on a multi-layer laminate substrate and the entire assembly
- 35% PCS1900 is encapsulated with plastic overmold.
• Tx-VCO-to-antenna and antenna-
to-Rx-SAW filter RF interface RF input and output ports of the SKY77590-51 are internally matched to a 50 Ω load to reduce
• Tx harmonics below –38 dBm the number of external components on the phone board. Extremely low leakage current of the
• Current limiting for over-voltage FEM maximizes handset standby time. Control of transmit and receive RF signal flows, and
protection and extended battery band selection are performed by four external control pads (see Figure 1 on overleaf). Mode of
life operation, Tx vs. Rx, and Band (GSM850, GSM900, DCS1800, PCS1900, and Bands 34/39) are
• Input/Output matched internally to controlled with the four logic inputs: Mode, TxEN, BS1, and BS2. Proper timing of the TxEN
50 Ω input and the VRAMP input ensures high isolation between the antenna and Tx-VCO while the
• High impedance control inputs: VCO is being tuned prior to the transmit burst.
20 µA, maximum
• Power control circuitry built-in for The integrated power amplifier control (PAC) function provides envelope amplitude control
improved TRP variation
while reducing sensitivity to input drive, temperature, power supply, and process variation.
Output power variation into mismatch is minimized with Skyworks’ True Power control circuit.
Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • [email protected] • www.skyworksinc.com
202524A • Skyworks Proprietary and Confidential Information • Products and Product Information are Subject to Change Without Notice. • November 8, 2012 1
Free Datasheet http://www.datasheet-pdf.com/

PRELIMINARY DATA SHEET SKY77590-51 Tx-Rx FEM FOR QUAD-BAND GSM / GPRS / EDGE
with SIX LINEAR TRx SWITCH PORTS and DUAL-BAND TD-SCDMA
FIGURE 1. SKY77590-51 FUNCTIONAL BLOCK DIAGRAM
Electrical Specifications DCS1800, PCS1900, TD-SCDMA Bands 34/39, and 3G including

The following tables list the electrical characteristics of the control logic descriptions for the various modes.
SKY77590-51 Front-End Module. Table 1 lists the absolute The SKY77590-51 is a static-sensitive electronic device and
maximum ratings and Table 2 lists the recommended operating should not be stored or operated near strong electrostatic fields.
conditions. Table 5 through Table 15 provide the electrical Detailed information on device dimensions, pad descriptions,
characteristics of the SKY77590-51 for modes GSM850, GSM900, packaging and handling can be found in later sections of this data
sheet.
TABLE 1. ABSOLUTE MAXIMUM RATINGS

Exposure to maximum rating conditions for extended periods may reduce device reliability. There is no damage to device with only one
parameter set at the limit at a time and all other parameters set at or below their nominal value.
Parameter Symbol Minimum Nominal Maximum Unit
Input Power PIN   15 dBm
Supply Voltage ≤ 1 µs (measured to GND) VBATT   6 V
DC Continuous During Burst1 IBATT —  2.5 A
Burst Duty Cycle DB —  50 %
Voltage Standing Wave Ratio VSWR —  20:1 V
Power Control Voltage VRAMP –0.3  VBATT V
Transmit Enable Voltage VTXEN –0.3  See Footnote2 V
Mode Control Voltage VMODE –0.3  See Footnote2 V
Band Select Control Voltage VBS1, VBS2 –0.3  See Footnote2 V
Temperatures Operating TCASE –30  +100 °C
Storage TSTG –40  +150
Moisture Sensitivity Level MSL   3
Reflow Solder Temperature (J-STD-020B) TSOLDER 260   °C
1 Applied voltage must be current-limited to specified range.
2 The lesser of VCC or 2.9 V.
2 November 8, 2012 • Skyworks Proprietary and Confidential Information • Products and Product Information are Subject to Change Without Notice. • 202524A

SKY77590-51 Tx-Rx FEM FOR QUAD-BAND GSM / GPRS / EDGE PRELIMINARY DATA SHEET
TABLE 2. RECOMMENDED OPERATING CONDITIONS

Unless otherwise specified: –20 °C ≤ TCASE ≤ +85 °C; 3.0 V ≤ VBATT ≤ 4.6 V.
Parameter Symbol Minimum Typical Maximum Unit
Supply Voltage1 GMSK VBATT 3.0 3.5 4.6 V

EDGE/ 3.0 3.6 4.6
TD-SCDMA
VCC 2.5 — 4.6
Supply Current IBATT 0 — 2.3 A
Operating Case Temperature2 1-Slot (12.5% duty cycle) TCASE –20 — +85 °C
2-Slot (25% duty cycle) –20 — +85
3-Slot (37.5% duty cycle) –20 — +85
4-Slot (50% duty cycle) –20 — +85
1 VBATT and VCC should be commoned unless DC/DC is used and VCC can be separately supplied.
2 Case Operating Temperature refers to the temperature at the GROUND PAD on the underside of the package.
TABLE 3. SKY77590-51 INTERFACE IMPEDANCES

Unless otherwise specified: –20 °C ≤ TCASE ≤ +85 °C; 3.0 V ≤ VBATT ≤ 4.6 V
Parameter Symbol Conditions Minimum Typical Maximum Units
Impedance System for All RF Ports Z_RF — 50 — 

Resistance of: R_GPIO DC resistance to ground — 200 — kΩ
TxEN, BS1, BS2, MODE
Capacitance of: C_GPIO Capacitance to ground — — 2 pF
TxEN, BS1, BS2, MODE
Current Consumption of: I_GPIO V_GPIO < 2.9 V — — 20 µA
TxEN, BS1, BS2, MODE TCASE = +25 °C
VBATT = 3.6 V
Input Logic Level Low V_IL –0.1 — 0.4 V
High V_IH 1.2 — 2.9 V
Burst Duty Cycle DB 12.5 — 50 %
Resistance of VRAMP R_VRAMP DC resistance to ground — 200 — kΩ
Capacitance of VRAMP C_VRAMP Capacitance to ground — — 2 pF
Current Consumption of VRAMP I_VRAMP VRAMP < 1.45 V — — 15 µA
Power Control Voltage VRAMP 0.2 — 1.6 V
Standby Current I_STANDBY All control lines = 0 V — — 20 µA
VBATT = 3.5 V
TCASE = +25 °C
Rx/3G Current I_RX/3G Rx/3G Mode — — 500 µA
TCASE = +25 °C
Switching Times Mode switching T_MODE EDGE to GMSK Mode defined as time from mode — — 2 µs
time transition to application of GMSK RF input drive to
meet forward isolation PESE
Band switching T_BAND Time required for output power to settle within — — 2
time 0.5 dB of final value after band switch (PIN and
VRAMP already applied prior to BS change)
Bias switching T_BIAS Time required for EDGE gain to settle within 0.5 dB — — 1
time of final value

TABLE 4. SKY77590-51 MODE CONTROL LOGIC

Mode Input Control Bits
TxEN MODE BS1 BS2
Standby 0 0 0 0
LB_GMSK_Tx 1 0 0 1
HB_GMSK_Tx 1 0 1 1
LB_EDGE_Tx 1 1 0 1
HB_EDGE_Tx 1 1 1 1
TRx1 0 1 0 0
TRx2 0 1 1 0
TRx3 0 1 0 1
TRx4 0 1 1 1
TRx5 0 0 1 0
TRx6 0 0 0 1
TD-SCDMA 1 1 1 1

TABLE 5. SKY77590-51 ELECTRICAL CHARACTERISTICS (1 OF 2)

Unless otherwise specified: 50 Ω system; pulsed operation with pulse width 2308 µs; duty cycle 4:8;–20 °C ≤ TCASE ≤ +85 °C;
3.0 ≤ VBATT ≤ 4.6 V; Terminate all unused RF ports with 50 Ω during test.
GSM850/900
GMSK Mode
Parameter Symbol Conditions Minimum Typical Maximum Unit
Frequency Range GSM850 ƒ — 824 — 849 MHz

GSM900 880 — 915
Input Power PIN — –1 — 6 dBm
Supply Voltage VBATT — 3.0 3.5 4.6 V
VCC — 2.5 — 4.6
Supply Current IBATT — — — 2.3 A
Power Added Efficiency GSM850 PAE VBATT = 3.5 V — 40 — %
PIN = 3 dBm
VRAMP = MAX VRAMP1
GSM900 Duty cycle = 1:8 — 40 —
TCASE = +25 °C
Harmonics 2ƒ0 to 15ƒ0 BW = 3 MHz –40 –34 dBm
5 dBm ≤ POUT ≤ 33 dBm
Output Power POUT_GMSK PIN = –1 dBm 33.3 34.0 — dBm
VBATT = 3.5 V
VRAMP = 1.6 V
TCASE = +25 °C
POUT_GMSK_EX PIN = –1 dBm 31.0 — —
VBATT = 3.0 V
VRAMP = 1.6 V
Input VSWR ΓIN POUT ≤ 33 dBm — — 2.5:1
Isolation ISO_PDSD PIN ≤ 6 dBm — –62 –46 dBm
TxEN < 0.4 V
BS2 = Logic High
VRAMP ≤ 0.1 V
ISO_PESE PIN ≤ 6 dBm — — –10
TxEN ≥ 1.2 V
BS2 = Logic High
VRAMP ≤ 0.1 V


Unless otherwise specified: 50 Ω system; pulsed operation with pulse width 2308 µs; duty cycle 4:8;–20 °C ≤ TCASE ≤ +85 °C;
GSM850/900
GMSK Mode
Low Power Current I_LOW_GMSK PIN ≤ 6 dBm — — 120 mA

POUT = 5 dBm
Stability Stab All combinations of the following parameters: No parasitic oscillation > –36 dBm
–1 dBm ≤ PIN ≤ 6 dBm
Load VSWR = 15:1, all phase angles
Load Mismatch Load All combinations of the following parameters: No module damage or permanent degradation
Load VSWR = 20:1, all phase angles.
Noise Power PNOISE_850 ƒ0 + 20 MHz (869 MHz to 894 MHz) — — –83 dBm
POUT ≤ 33 dBm
VBATT ≤ 3.5 V
TCASE = +25 °C
RBW = 100 kHz
PNOISE_900 ƒ0 + 20 MHz — — –83
POUT ≤ 33 dBm
VBATT ≤ 3.5 V
TCASE = +25 °C
RBW = 100 kHz
ƒ0 + 10 MHz — — –79
POUT ≤ 33 dBm
VBATT ≤ 3.5 V
TCASE = +25 °C
RBW = 100 kHz
ƒ0 – 1805 MHz to 1880 MHz — — –86
POUT ≤ 33 dBm
VBATT ≤ 3.5 V
TCASE = +25 °C
RBW = 100 kHz
1 MAX VRAMP = VRAMP at POUT = 33 dBm, 50 Ω load, TCASE =+25 °, VBATT = 3.5 V, PIN = 3dBm.


Unless otherwise specified: 50 Ω system; pulsed operation with pulse width 2308 µs; duty cycle 4:8; –20 °C ≤ TCASE ≤ +85 °C;
GSM850/900
EDGE Mode
Frequency Range GSM850 ƒ — 824 — 849 MHz

EDGE900 880 — 915
VCC — 2.5 — 4.6
Power Added Efficiency PAE VBATT = 3.6 V — 20 — %
VRAMP = 1.45 V
POUT = 27.5 dBm
TCASE = +25 °C
Harmonics 2ƒ0 to 15ƒ0 BW = 3 MHz — –45 –36 dBm
5 dBm ≤ POUT ≤ 27.5 dBm
Output Power POUT_EDGE VBATT = 3.6 V 27.5 — — dBm
VRAMP = 1.45 V
TCASE = +25 °C
ACPR / EVM / ORFS in specification
POUT_EDGE_EX VBATT = 3.0 V 26.0 — —
VRAMP = 1.45 V
Input VSWR ΓIN POUT ≤ 27.5 dBm — — 3:1
Gain G_NOM_850 VBATT = 3.6 V 31.1 32.8 34.4 dB
POUT = 27.5 dBm
G_NOM_900 VRAMP = 1.45 V 30.7 32.4 34.0
TCASE = +25 °C
G_EX_850 POUT = POUT_EDGE, POUT_EDGE_EX 29.3 32.8 35.8
VRAMP = 1.45 V
G_EX_900 29.0 32.4 35.4
ACPR ACPR_200 POUT = POUT_EDGE, POUT_EDGE_EX — — –34 dBc

Bandwidth = 30 kHz
ACPR_400 — — –58
VRAMP = 1.45 V
ACPR_600 — — –64
EVM EVM_RMS POUT = POUT_EDGE, POUT_EDGE_EX V — — 5 %
VRAMP = 1.45 V
Isolation ISO_E_PDSD PIN = –45 dBm — — –60 dBm
TxEN < 0.4 V
BS2 = Logic High
V RAMP ≤ 0.1 V


GSM850/900
EDGE Mode
Low Power Current I_LOW_EDGE VBATT = 3.6 V — — 140 mA

VRAMP = 0.4 V
POUT = 5 dBm
Stability Stab All combinations of the following parameters: No parasitic oscillation > –36 dBm
VRAMP = controlled
Noise Power PNOISE_850 ƒo + 20 MHz (869 MHz to 894 MHz) — — –82 dBm
POUT ≤ 27.5 dBm
VBATT = 3.6 V
TCASE = +25 °C
RBW = 100 kHz
PNOISE_900 ƒo + 20 MHz — — –82
POUT ≤ 27.5 dBm
VBATT = 3.6 V
TCASE = +25 °C
RBW = 100 kHz
ƒo + 10 MHz — — –82
POUT ≤ 27.5 dBm
VBATT = 3.6 V
TCASE = +25 °C
RBW = 100 kHz
ƒo = 1805 MHz to 1880 MHz — — –86
POUT ≤ 27.5 dBm
VBATT = 3.6 V
TCASE = +25 °C
RBW = 100 kHz


GSM1800/1900
GMSK Mode
Frequency Range DCS1800 ƒ — 1710 — 1785 MHz

PCS1900 — 1850 — 1910
Input Power PIN — –1 — 6 dBm
VCC — 2.5 — 4.6
Power Added Efficiency PAE_GSM1800 VBATT = 3.5 V — 35 — %
PIN = 3 dBm
VRAMP = MAX VRAMP1
PAE_GSM1900 Duty cycle = 1:8 — 35 —
TCASE = +25 °C
Harmonics 2ƒ0 to 7ƒ0 BW = 3 MHz –40 –34 dBm
50 Ω
Output Power POUT_GMSK PIN = –1 dBm 31.0 31.4 — dBm
VBATT = 3.5 V
VRAMP = 1.6 V
TCASE =+25 °C
POUT_GMSK_EX PIN = –1 dBm 28.5 — —
VBATT = 3.0 V
VRAMP = 1.6 V
Input VSWR ΓIN POUT ≤ 31 dBm — — 2.5:1
Isolation ISO_PDSD PIN ≤ 6 dBm — –52 –46 dBm
TxEN < 0.4 V
BS2 = Logic High
VRAMP ≤ 0.1 V
ISO_PESE PIN ≤ 6 dBm — — –10
TxEN ≥ 1.2 V
BS2 = Logic High
VRAMP ≤ 0.1 V
Low Power Current I_LOW_GMSK PIN ≤ 6 dBm — — 100 mA
POUT = 0 dBm


GSM1800/1900
GMSK Mode
Stability Stab All combinations of the following parameters: No parasitic oscillation >–36 dBm
Noise Power PNOISE_1800 ƒ0 + 20 MHz — — –83 dBm
POUT ≤ 31 dBm
VBATT = 3.5 V
TCASE = +25 °C
RBW = 100 kHz
ƒ0 = 925 MHz to 960 MHz — — –84
POUT ≤ 31 dBm
VBATT = 3.5 V
TCASE = +25 °C
RBW = 100 kHz
PNOISE_1900 ƒo + 20 MHz — — –83
POUT ≤ 31 dBm
VBATT = 3.5 V
TCASE = +25 °C
RBW = 100 kHz
ƒo = 869 MHz to 894 MHz — — –84
POUT ≤ 31 dBm
VBATT = 3.5 V
TCASE = +25 °C
RBW = 100 kHz
1 MAX VRAMP = VRAMP at POUT = 31 dBm, 50 Ω load, TCASE =+25 °, VBATT = 3.5 V, PIN = 3dBm.


GSM1800/1900
EDGE Mode
Frequency Range EDGE1800 ƒ — 1710 — 1785 MHz

EDGE1900 1850 — 1910
VCC — 2.5 — 4.6
Power Added Efficiency PAE_GSM1800 VBATT = 3.6 V — 22 — %
VRAMP = 1.45 V
PAE_GSM1900 POUT = 26.5 dBm — 22 —
TCASE = +25 °C
Harmonics 2ƒ0 to 7ƒ0 BW = 3 MHz — –45 –36 dBm
Output Power POUT_EDGE VBATT = 3.6 V 26.5 — — dBm
VRAMP = 1.45 V
TCASE = +25 °C
POUT_EDGE_EX VBATT = 3.0 V 25.0 — —
VRAMP = 1.45 V
Input VSWR ΓIN POUT ≤ 26.5 dBm — — 3:1
Gain G_NOM_1800 VBATT = 3.6 V 32.3 34.1 36.0 dB
POUT = 26.5 dBm
G_NOM_1900 VRAMP = 1.45 V 31.2 33.0 34.9
TCASE = +25 °C
G_EX_1800 POUT = POUT_EDGE, POUT_EDGE_EX 30.6 34.1 37.4
VRAMP = 1.45 V
G_EX_1900 29.5 33.0 36.3
ACPR ACPR_200 POUT = POUT_EDGE, POUT_EDGE_EX — — –34 dBc

Bandwidth = 30 kHz
ACPR_400 — — –58
VRAMP = 1.45 V
ACPR_600 — — –64
EVM EVM_RMS POUT = POUT_EDGE, POUT_EDGE_EX — — 5 %
VRAMP = 1.45 V
Isolation ISO_E_PDSD PIN = –45 dBm — — –60 dBm
TxEN < 0.4 V
BS2 = Logic High
V RAMP ≤ 0.1 V
Low Power Current I_LOW_EDGE POUT = 0 dBm — — 140 mA
VBATT = 3.6 V
VRAMP = 0.4 V


GSM1800/1900
EDGE Mode
Stability Stab All combinations of the following parameters: No parasitic oscillation >–36 dBm
Load VSWR = 20:1, all phase angles..
Noise Power PNOISE_1800 ƒ0 + 20 MHz — — –80 dBm
POUT ≤ 26.5 dBm
VBATT = 3.6 V
TCASE = +25 °C
RBW = 100 kHz
ƒ0 = 925 MHz to 960 MHz — — –84
POUT ≤ 26.5 dBm
VBATT = 3.6 V
TCASE = +25 °C
RBW = 100 kHz
PNOISE_1900 ƒ0 + 20 MHz — — –80
POUT ≤ 26.5 dBm
VBATT = 3.6 V
TCASE = +25 °C
RBW = 100 kHz
ƒo = 869 MHz to 894 MHz — — –84
POUT ≤ 26.5 dBm
VBATT = 3.6 V
TCASE = +25 °C
RBW = 100 kHz

TABLE 9. SKY77590-51 ELECTRICAL SPECIFICATIONS FOR TD-SCDMA NOMINAL OPERATING CONDITIONS (1880–1920 MHZ)
Unless otherwise specified: per Table 2 over dynamic range up to 24 dBm output power.
Parameters Symbol Condition Minimum Typical Maximum Unit
Output Power POUT HPM 24 — — dBm

VBATT = 3.4 V
Gain GHIGH POUT = 24 dBm 31.0 32.5 34.0 dB
VRAMP = 1.45 V
Power Added Efficiency PAEHIGH POUT = 24 dBm — 12.5 — %
VRAMP = 1.45 V
Total Supply Current ICC_HIGH POUT = 24 dBm — 570 670 mA
VRAMP = 1.45 V
Adjacent Channel Leakage 1.6 MHz offset ACLR1.6 POUT = 24 dBm — –41 –37 dBc
power Ratio1 VRAMP = 1.45 V
3.2 MHz offset ACLR3.2 POUT = 24 dBm — –63 –55
VRAMP = 1.45 V
Harmonic Suppression Second ƒ02 POUT ≤ 24 dBm — — –36 dBm
Third ƒ03 — — –46
Tx Noise in Rx Bands DCS Rx 1805 MHz–1850 MHz — — –131 dBm/Hz
Input Voltage Standing Wave Ratio VSWR — — — 3.0:1 —
EVM EVM POUT = 24 dBm — 2 4 %
VRAMP = 1.45 V
Rise / Fall Time DC TONDC — — 8 10 µs
TOFFDC — — 8 10
RF TONRF — — 3 6
TOFFRF — — 3 6
Stability (Spurious output) S 5:1 VSWR All phases — — –65 dBc
Ruggedness - no damage2 Ru POUT ≤ 24 dBm 10:1 — — VSWR
1 ACLR is expressed as a ratio of total adjacent power to TD-SCDMA modulated in-band, both measured in 1.28 MHz bandwidth at specified offsets and 16% duty cycle.
2 All phases, time = 10 seconds.

TABLE 10. SKY77590-51 ELECTRICAL SPECIFICATIONS FOR TD-SCDMA NOMINAL OPERATING CONDITIONS (2010–2025 MHZ)
Unless otherwise specified: per Table 2 over dynamic range up to 24 dBm output power.
Parameters Symbol Condition Minimum Typical Maximum Unit
Gain GHIGH POUT = 24 dBm 29.7 31.2 32.7 dB

VRAMP = 1.45 V
Power Added Efficiency PAEHIGH POUT = 24 dBm — 11 — %
VRAMP = 1.45 V
Total Supply Current ICC_HIGH POUT = 24 dBm — 630 750 mA
VRAMP = 1.45 V
Adjacent Channel Leakage 1.6 MHz offset ACLR1.6 POUT = 24 dBm — –40 –37 dBc
power Ratio2 VRAMP = 1.45 V
3.2 MHz offset ACLR3.2 — –60 –55
Harmonic Suppression Second ƒ02 POUT ≤ 24 dBm — — –40 dBm

Third ƒ03 — — –46
Tx Noise in Rx Bands DCS Rx 1805 MHz–1880 MHz — — –131 dBm/Hz
Input Voltage Standing Wave Ratio VSWR — — — 3.0:1 —
EVM EVM POUT = 24 dBm — 2 4 %
VRAMP = 1.45 V
Rise / Fall Time DC TONDC — — 8 10 µs
TOFFDC — — 8 10
RF TONRF — — 3 6
TOFFRF — — 3 6
Stability (Spurious output) S 5:1 VSWR All phases — — –65 dBc
Ruggedness - no damage2 Ru POUT ≤ 24 dBm 10:1 — — VSWR
1 ACLR is expressed as a ratio of total adjacent power to TD-SCDMA modulated in-band, both measured in 1.28 MHz bandwidth at specified offsets and 16% duty cycle.
2. All phases, time = 10 seconds.

TABLE 11. SKY77590-51 ELECTRICAL CHARACTERISTICS

Ports TRx1 to TRx6
Tx-Rx Mode
Frequency Range 3G_Tx/Rx ƒ_3G_TX/RX — 824 — 2690 MHz

Insertion Loss ANT – 3G_Tx/Rx 3G_TX/RX 824 MHz to 960 MHz — 0.60 0.95 dB
TCASE =+25°C
1710 MHz to 1990 MHz — 0.70 0.95
TCASE =+25°C
2110 MHz to 2690 MHz — 1.00 1.20
TCASE =+25°C
Isolation ADJACENT Ports TRx1 through TRx6 to any other 25 — — dB
ADJACENT port (824–960 MHz)
Ports TRx1 through TRx6 to any other 25 — —
NON-ADJACENT Ports TRx1 through TRx6 to any other 30 — —
NON-ADJACENT port (824–960 MHz)
IMD2 ƒRX – ƒTX Tx Output Power = 20 dBm — — –95 dBm
Blocker Power = –15 dBm
ƒRX + ƒTX — — –95
Blocker frequency impedance is swept over all
IMD3 2ƒTX – ƒRX phase angles at the WCDMA port. (Minimum VSWR — — –97
at blocker is 10:1 to model out-of-band duplexer
2ƒRX – ƒTX — — –97
impedance.
Leakage from Tx to TRx Ports P_TRx — — — 5 dBm

FIGURE 2. MARGIN-TO-SEM CHART

Technical Information
FIGURE 3. SKY77590-51 APPLICATION SCHEMATICS

Package Dimensions dimensions. Figure 5 provides a recommended phone board

The SKY77590-51 quad-band front-end module is a 6 mm x 6 layout footprint for the FEM to help the designer attain optimum
mm x 0.9 mm, 28-pad, leadless package. Figure 4 is a three- thermal conductivity, good grounding, and minimum RF
view mechanical drawing of the pad configuration with layout discontinuity for the 50-ohm terminals.
FIGURE 4. DIMENSIONAL DIAGRAM FOR 6 mm X 6 mm X 0.9 mm, 28-PAD LEADLESS PACKAGE – SKY77590-51 (ALL VIEWS)

FIGURE 5. PHONE PCB LAYOUT FOR 6 mm X 6 mm, 28-PAD LEADLESS PACKAGE – SKY77590-51 SPECIFIC

Package Description and increments counter-clockwise around the package. Table 16

Figure 6 shows the device pad configuration and the pad lists the pad names and signal descriptions. Figure 7 illustrates
numbering convention, which starts with pad 1 in the upper left the typical case markings.
FIGURE 6. SKY77590-51 PAD NAMES AND CONFIGURATION (TOP VIEW) FIGURE 7. TYPICAL CASE MARKINGS
TABLE 12. SKY77590-51 SIGNAL DESCRIPTIONS Package Handling Information

Pad1 Name Description Because of its sensitivity to moisture absorption, this device
9 Tx_HB_IN Input Tx signal 1710 MHz–2025 MHz package is baked and vacuum-packed prior to shipment.
10 Tx_LB_IN Input Tx signal 824 MHz–915 MHz
Instructions on the shipping container label must be followed
regarding exposure to moisture after the container seal is broken,
11 BS2 Band Select
otherwise, problems relate to moisture absorption may occur
12 BS1 Band Select when the part is subjected to high temperature during solder
13 VBATT Battery supply voltage assembly.
14 VCC Switch supply voltage The SKY77590-51 is capable of withstanding an MSL3/260 °C
16 MODE GMSK / EDGE / TD-SCDMA mode switch (0 = GMSK, solder reflow. Care must be taken when attaching this product,
1 = EDGE / TD-SCDMA) whether it is done manually or in a production solder reflow
17 TxEN Enable TxEN environment. If the part is attached in a reflow oven, the
temperature ramp rate should not exceed 3 °C per second;
18 VRAMP Controls power in GSM mode and bias in EDGE/TD-SCDMA
maximum temperature should not exceed 260 °C. If the part is
19 TRx1 Wideband TRx switch port manually attached, precaution should be taken to insure that the
20 TRx2 Wideband TRx switch port part is not subjected to temperatures exceeding 260 °C for more
21 TRx3 Wideband TRx switch port than 10 seconds. For details on attachment techniques,
precautions, and handling procedures recommended by
22 TRx4 Wideband TRx switch port
Skyworks, please refer to Skyworks Application Note: PCB Design
23 TRx5 Wideband TRx switch port and SMT Assembly/Rework, Document Number 101752.
24 TRx6 Wideband TRx switch port Additional information on standard SMT reflow profiles can also
26 ANT PA output to Antenna be found in the JEDEC Standard J-STD-020.
Ground Pad Grid Ground Pad Grid (device underside) Production quantities of this product are shipped in the standard
1 Pads 1–8, 15, 25, 27, 28 are ground pads.
tape-and-reel format (Figure 8).

FIGURE 8. DIMENSIONAL DIAGRAM FOR CARRIER TAPE BODY SIZE 6 mm X 6 mm X 0.85 / 1.1 MM – MCM

Ordering Information
Product Name Order Number Evaluation Board Part Number
SKY77590-51 Tx-Rx Front-End Module SKY77590-51
Revision History
Revision Date Description
A November 8, 2012 Initial Release – Preliminary Information
References
Skyworks Application Note: SKY77590 Rx-Tx Front-End Modules – Evaluation Board Information and Implementation,
Document Number 202331
Skyworks Application Note: PCB Design and SMT Assembly/Rework, Document Number 101752
Standard SMT Reflow Profiles: JEDEC Standard J–STD–020
© 2012, Skyworks Solutions, Inc. All Rights Reserved.
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information contained herein. Skyworks may change its documentation, products, services, specifications or product descriptions at any time, without notice. Skyworks makes no commitment to
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PRELIMINARY DATA SHEET

SKY77590-51 Tx-Rx FEM for Quad-Band GSM/ GPRS/ EDGE

Free Datasheet http://www.datasheet-pdf.com/

FIGURE 1. SKY77590-51 FUNCTIONAL BLOCK DIAGRAM

Electrical Specifications DCS1800, PCS1900, TD-SCDMA Bands 34/39, and 3G including

TABLE 1. ABSOLUTE MAXIMUM RATINGS

Free Datasheet http://www.datasheet-pdf.com/

TABLE 2. RECOMMENDED OPERATING CONDITIONS

Supply Voltage1 GMSK VBATT 3.0 3.5 4.6 V

TABLE 3. SKY77590-51 INTERFACE IMPEDANCES

Impedance System for All RF Ports Z_RF — 50 — 

Free Datasheet http://www.datasheet-pdf.com/

TABLE 4. SKY77590-51 MODE CONTROL LOGIC

TxEN MODE BS1 BS2

Free Datasheet http://www.datasheet-pdf.com/

TABLE 5. SKY77590-51 ELECTRICAL CHARACTERISTICS (1 OF 2)

Parameter Symbol Conditions Minimum Typical Maximum Unit

Frequency Range GSM850 ƒ — 824 — 849 MHz

Free Datasheet http://www.datasheet-pdf.com/

TABLE 5. SKY77590-51 ELECTRICAL CHARACTERISTICS (2 OF 2)

Parameter Symbol Conditions Minimum Typical Maximum Unit

Low Power Current I_LOW_GMSK PIN ≤ 6 dBm — — 120 mA

Free Datasheet http://www.datasheet-pdf.com/

TABLE 6. SKY77590-51 ELECTRICAL CHARACTERISTICS (1 OF 2)

Parameter Symbol Conditions Minimum Typical Maximum Unit

Frequency Range GSM850 ƒ — 824 — 849 MHz

ACPR ACPR_200 POUT = POUT_EDGE, POUT_EDGE_EX — — –34 dBc

Free Datasheet http://www.datasheet-pdf.com/

TABLE 6. SKY77590-51 ELECTRICAL CHARACTERISTICS (2 OF 2)

Parameter Symbol Conditions Minimum Typical Maximum Unit

Low Power Current I_LOW_EDGE VBATT = 3.6 V — — 140 mA

Free Datasheet http://www.datasheet-pdf.com/

TABLE 7. SKY77590-51 ELECTRICAL CHARACTERISTICS (1 OF 2)

Parameter Symbol Conditions Minimum Typical Maximum Unit

Frequency Range DCS1800 ƒ — 1710 — 1785 MHz

Free Datasheet http://www.datasheet-pdf.com/

TABLE 7. SKY77590-51 ELECTRICAL CHARACTERISTICS (2 OF 2)

Parameter Symbol Conditions Minimum Typical Maximum Unit

Free Datasheet http://www.datasheet-pdf.com/

TABLE 8. SKY77590-51 ELECTRICAL CHARACTERISTICS (1 OF 2)

Parameter Symbol Conditions Minimum Typical Maximum Unit

Frequency Range EDGE1800 ƒ — 1710 — 1785 MHz

ACPR ACPR_200 POUT = POUT_EDGE, POUT_EDGE_EX — — –34 dBc

Free Datasheet http://www.datasheet-pdf.com/

TABLE 8. SKY77590-51 ELECTRICAL CHARACTERISTICS (2 OF 2)

Parameter Symbol Conditions Minimum Typical Maximum Unit

Free Datasheet http://www.datasheet-pdf.com/

Output Power POUT HPM 24 — — dBm

Free Datasheet http://www.datasheet-pdf.com/

Gain GHIGH POUT = 24 dBm 29.7 31.2 32.7 dB

Harmonic Suppression Second ƒ02 POUT ≤ 24 dBm — — –40 dBm

Free Datasheet http://www.datasheet-pdf.com/

TABLE 11. SKY77590-51 ELECTRICAL CHARACTERISTICS

Parameter Symbol Conditions Minimum Typical Maximum Unit

Frequency Range 3G_Tx/Rx ƒ_3G_TX/RX — 824 — 2690 MHz

Free Datasheet http://www.datasheet-pdf.com/

FIGURE 2. MARGIN-TO-SEM CHART

Free Datasheet http://www.datasheet-pdf.com/

FIGURE 3. SKY77590-51 APPLICATION SCHEMATICS

Free Datasheet http://www.datasheet-pdf.com/