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LS5018B
 LS5060B/LS5120B
TRISILTM
FEATURES
BIDIRECTIONAL CROWBAR PROTECTION.
BREAKDOWN VOLTAGES RANGE:
18V, 60V and 120V.
HOLDING CURRENT = 200mA min.
HIGH SURGE CURRENT CAPABILITY
IPP = 100A 10/1000 µs

DESCRIPTION
DIL8
The LS50xxB series has been designed to protect
telecommunication equipment against lightning
and transients induced by AC power lines. SCHEMATIC DIAGRAM
Its high surge current capability makes the
LS50xxB a reliable protection device for very ex-
posed equipment, or when series resistors are
very low. 1 8

COMPLIES WITH THE FOLLOWING STANDARDS:

2 7
CCITT K17 - K20 10/700 µs 1.5 kV
5/310 µs 38 A
3 6
VDE 0433 10/700 µs 2 kV
5/200 µs 50 A
CNET 0.5/700 µs 1.5 kV 4 5
0.2/310 µs 38 A

ABSOLUTE MAXIMUM RATINGS (Tamb =25°C)

Symbol Parameter Value Unit

IPP Peak pulse current 10/1000 µs 100 A

8/20 µs 250

ITSM Non repetitive surge peak on-state tp = 20 ms 50 A

current

dI/dt Critical rate of rise of on-state current Non repetitive 100 A/µs
dV/dt Critical rate of rise of off-state voltage VRM 5 kV/µs
Tstg Storage and operating junction temperature range - 40 to + 150 °C
Tj 150 °C
TL Maximum lead temperature for soldering during 10s 230 °C

September 1998 Ed : 3A 1/5

 LS5018B/LS5060B/LS5120B
www.DataSheet4U.com

THERMAL RESISTANCE

Symbol Parameter Value Unit

Rth (j-a) Junction to ambient on printed circuit with recommended pad 80 °C/W
layout

ELECTRICAL CHARACTERISTICS (Tamb =25°C)

Symbol Parameter
IRM Leakage current at stand-offvoltage
VRM Stand-off voltage
VBR Breakdown voltage
VBO Breakover voltage
IH Holding current
IBO Breakover current
IPP Peak pulse current
C Capacitance

IRM @ VRM VBR @ IR VBO @ IBO IH C

max. min. max. typ. min. max.

Type
note 1 note 2 note 3
µA V V mA V mA mA pF

LS5018B 5 16 17 1 22 1300 200 150

LS5060B 10 50 60 1 85 1000 200 150

LS5120B 20 100 120 1 180 1250 250 150
Note 1 : Measured at 50Hz (1 cycle)
Note 2 : See test circuit
Note 3 : VR = 5 V, F = 1MHz.

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www.DataSheet4U.com LS5018B/LS5060B/LS5120B
TEST CIRCUIT 1 FOR IBO and VBO parameters:
tp = 20ms
Auto
Transformer R1
220V/2A static 140
relay. R2
240

K
Vout V BO
220V

IBO D.U.T
measure
measure

Transformer
220V/800V
5A
TEST PROCEDURE :
Pulse Test duration (tp = 20ms):
- For Bidirectional devices = Switch K is closed
- For Unidirectional devices = Switch K is open.
VOUT Selection
- Device with VBO < 200 Volt
- VOUT = 250 VRMS, R1 = 140 Ω.
- Device with VBO ≥ 200 Volt
- VOUT = 480 VRMS, R2 = 240 Ω.

TEST CIRCUIT 2 for IH parameter.

- VP
D.U.T.
VBAT = - 48 V

Surge generator

This is a GO-NOGO Test which allows to confirm the holding current (IH) level in a functional
test circuit.

TEST PROCEDURE :
1) Adjust the current level at the IH value by short circuiting the AK of the D.U.T.
2) Fire the D.U.T with a surge Current : Ipp = 10A , 10/1000 µs.
3) The D.U.T will come back off-state within 50 ms max.

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 LS5018B/LS5060B/LS5120B
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Figure 1 : Non repetitive surge peak current Figure 2 : Relative variation of holding current
versus overload duration versus junction temperature.

ITSM (A)
70 IH[Tj] / IH[Tj=25°C]
2.0
60 1.8
F=50Hz
Tj initial=25°C 1.6
50
1.4
40 1.2
1.0
30
0.8
20 0.6
0.4
10
0.2
t(s) Tamb (°C)
0
0.0
-40 -20 0 20 40 60 80 100 120
1E-2 1E-1 1E+0 1E+1 1E+2 1E+3

Figure 3 : Relative variation of breakdown voltage Figure 4 : Junction capacitance versus reverse
versus ambient temperature. applied voltage.

1000
1.08

1.06

1.04 LS5120
LS5018

100 LS5060
1.02

1.00

0.98

10
0.96 1 10 100 200
0 10 20 30 40 50 60 70

ORDER CODE

LS5 018 B

VOLTAGE

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www.DataSheet4U.com LS5018B/LS5060B/LS5120B
MARKING : Logo, Date Code,part Number. Packaging : Products supplied in antistatic tubes.
Weight : 0.59g

PACKAGE MECHANICAL DATA

DIL 8 Plastic

DIMENSIONS
REF. Millimetres Inches
Min. Typ. Max. Min. Typ. Max.
I a1 0.70 0.027
b1
B 1.39 1.65 0.055 0.065
a1
L
B1 0.91 1.04 0.036 0.041
B B1 F b 0.5 0.020
b e
b1 0.38 0.50 0.015 0.020
Z
e3 E D 9.80 0.385
D
E 8.8 0.346
8 5
e 2.54 0.100
e3 7.62 0.300
1 4 F 7.1 0.280
I 4.8 0.189
L 3.3 0.130
Z 0.44 1.60 0.017 0.063

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsIbility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
 1998 STMicroelectronics - Printed in Italy - All rights reserved.
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