Lab 12 Voltage Divider

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Department of Electronic Engineering

Faculty of Engineering and Technology


University of Sindh, Jamshoro
Electronic Devices and Circuits (EE-123)

LAB # 12
Name: Roll No:

Score _Signature of the Lab Tutor: Date:

Dr. Mudasir Ahmed Memon

Selection of Utilization of Experimental Experimental Lab Safety Teamwork Technical


Equipment Lab Tools & Data Collection Data Analysis Precautions During Lab cleanliness and 𝒔𝒄𝒐𝒓𝒆 = 𝟐
×𝐎𝐛𝐭𝐚𝐢𝐧ed marks
(0 to 5) Calibration (0 to 5) (0 to 5) (0 to 5) Task Organization 𝟑𝟓
(0 to 5) (0 to 5) (0 to 5)

Object: To study the operation of voltage divider bias configuration with different models of NPN
transistors

Apparatus Required:
1. Regulated Power supply, Breadboard and Connecting wires
2. Transistor (NPN, PNP), Resistors, Capacitor
3. Oscilloscope and Multimeter (MM), Function Generator

Theory: [30 minutes]

In the fixed bias configurations, the bias current ICQ and voltage VCEQ were a function of the current gain 𝛽
of the transistor. However, because 𝛽 is temperature sensitive, especially for silicon transistors, and the
actual value of 𝛽 is usually not well defined, it would be desirable to develop a bias circuit that is less
dependent on, or in fact is independent of, the transistor 𝛽. The voltage-divider bias configuration of Fig.
12.1 is such a network. If analyzed on an exact basis, the sensitivity to changes in 𝛽 is quite small. If the
circuit parameters are properly chosen, the resulting levels of ICQ and VCEQ can be almost totally
independent of 𝛽. The level of IBQ will change with the change in 𝛽, but the operating point on the
characteristics defined by ICQ and VCEQ can remain fixed if the proper circuit parameters are employed.

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Department of Electronic Engineering
Faculty of Engineering and Technology
University of Sindh, Jamshoro
Electronic Devices and Circuits (EE-123)

Fig.12.1: Voltage divider bias configuration


Base Current (𝐼𝐵):

𝐸𝑇𝐻 − 𝑉𝐵𝐸
𝐼𝐵 =
𝑅𝑇𝐻 + (𝛽 + 1)𝑅𝐸 Voltage

collector-Emitter (𝑉𝐶𝐸):

𝑉𝐶𝐸 = 𝑉𝐶𝐶 − 𝐼𝐶(𝑅𝐶 + 𝑅𝐸)

Load-Line Analysis

𝑉𝐶𝐶
𝐼𝐶(𝑆𝑎𝑡) =
𝑅 𝐶 + 𝑅𝐸

𝑉𝐶𝐸 (𝐶𝑢𝑡𝑡𝑜𝑓𝑓) = 𝑉𝐶𝐶

Procedure [150 minutes]


Voltage divider bias configuration with different model numbers (different transistors are selected because
each have different 𝜷 values)

1. Select any NPN Transistor available in the laboratory and make the circuit shown in figure 12.2.
2. Write down the readings of IB, IC, and VCE in Table 12.1.
3. Choose another NPN transistor with different model number and write down the readings of I B, IC,
and VCE in Table 12.1

Load line analysis.

1. Connect the circuit as shown in Fig. 12.2.


2. Select and fix any value of IB through VBB, vary VCC1 and write down the values of IC and VCE in table
12.2.

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Department of Electronic Engineering
Faculty of Engineering and Technology
University of Sindh, Jamshoro
Electronic Devices and Circuits (EE-123)
3. Slightly increase the value of IB and repeat step 2.

𝐼𝐶(𝑆𝑎𝑡) = ______________________

𝑉𝐶𝐸(𝐶𝑢𝑡𝑡𝑜𝑓𝑓) = ______________________________

Table 12.1

NPN (Model No:_______________) NPN (Model No:_______________)

𝐼𝐵 𝐼𝐶 𝑉𝐶𝐸 𝐼𝐵 𝐼𝐶 𝑉𝐶𝐸

Fig 12.2: voltage divider bias circuit

Table 12.2
Output characteristics
VCC (V) IC VCE VCC (V) IC VCE VCC (V) IC VCE
I B=______________

I B=________________

I B=________________

1 1 1
2 2 2
3 3 3
4 4 4
5 5 5
6 6 6
7 7 7

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Department of Electronic Engineering
Faculty of Engineering and Technology
University of Sindh, Jamshoro
Electronic Devices and Circuits (EE-123)
8 8 8
9 9 9
10 10 10
11 11 11
12 12 12

Graph:

1. Plot the graph as per the data given in Table 12.2 over the load line.

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