PSMN7R6 60PS-2939099

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PSMN7R6-60PS

N-channel 60 V 7.8 mΩ standard level MOSFET


Rev. 03 — 28 October 2010 Product data sheet

1. Product profile

1.1 General description


Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.

1.2 Features and benefits


„ High efficiency due to low switching „ Suitable for standard level gate drive
and conduction losses sources

1.3 Applications
„ DC-to-DC converters „ Motor control
„ Load switching „ Server power supplies

1.4 Quick reference data


Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 60 V
ID drain current Tmb = 25 °C; VGS = 10 V; - - 92 A
see Figure 1
Ptot total power dissipation Tmb = 25 °C; see Figure 2 - - 149 W
Static characteristics
RDSon drain-source on-state VGS = 10 V; ID = 25 A; - 5.9 7.8 mΩ
resistance Tj = 25 °C; see Figure 13;
see Figure 9
Dynamic characteristics
QGD gate-drain charge VGS = 10 V; ID = 25 A; - 10.6 - nC
VDS = 30 V; see Figure 15;
see Figure 14
Avalanche ruggedness
EDS(AL)S non-repetitive VGS = 10 V; Tj(init) = 25 °C; - - 110 mJ
drain-source avalanche ID = 92 A; Vsup ≤ 100 V;
energy RGS = 50 Ω; unclamped
Nexperia PSMN7R6-60PS
N-channel 60 V 7.8 mΩ standard level MOSFET

2. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 G gate 2
mb D
2 D drain
3 S source
1G
mb D mounting base; connected to
drain mbb076 S
3

1 2 3

SOT78 (TO-220AB)

3. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
PSMN7R6-60PS TO-220AB plastic single-ended package; heatsink mounted; 1 mounting SOT78
hole; 3-lead TO-220AB

4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 60 V
VDGR drain-gate voltage RGS = 20 kΩ - 60 V
VGS gate-source voltage -20 20 V
ID drain current VGS = 10 V; Tmb = 100 °C; see Figure 1 - 65 A
VGS = 10 V; Tmb = 25 °C; see Figure 1 - 92 A
IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; see Figure 3 - 389 A
Ptot total power dissipation Tmb = 25 °C; see Figure 2 - 149 W
Tstg storage temperature -55 175 °C
Tj junction temperature -55 175 °C
Source-drain diode
IS source current Tmb = 25 °C - 92 A
ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 389 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source VGS = 10 V; Tj(init) = 25 °C; ID = 92 A; - 110 mJ
avalanche energy Vsup ≤ 100 V; RGS = 50 Ω; unclamped

PSMN7R6-60PS All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved

Product data sheet Rev. 03 — 28 October 2010 2 of 14


Nexperia PSMN7R6-60PS
N-channel 60 V 7.8 mΩ standard level MOSFET

003aad661 03aa16
100 120
ID
(A) Pder
80 (%)

80
60

40
40

20

0 0
0 50 100 150 200 0 50 100 150 200
Tmb (°C) Tmb (°C)

Fig 1. Continuous drain current as a function of Fig 2. Normalized total power dissipation as a
mounting base temperature function of mounting base temperature

003aad700
103
ID
(A) Limit RDSon = VDS / ID
102 10 μs

100 μs

10

DC
1 ms
1
10 ms
100 ms

10−1

10−2
1 10 102
VDS (V)

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

PSMN7R6-60PS All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved

Product data sheet Rev. 03 — 28 October 2010 3 of 14


Nexperia PSMN7R6-60PS
N-channel 60 V 7.8 mΩ standard level MOSFET

5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-mb) thermal resistance from junction to see Figure 4 - 0.49 1.01 K/W
mounting base

003aad662
1

Zth
δ = 0.5
(K/W)

0.2
10−1
0.1
0.02
0.05
single shot tp
P δ=
10−2 T

tp t
T
10−3
10−6 10−5 10−4 10−3 10−2 10−1 1
tp (s)

Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration

PSMN7R6-60PS All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved

Product data sheet Rev. 03 — 28 October 2010 4 of 14


Nexperia PSMN7R6-60PS
N-channel 60 V 7.8 mΩ standard level MOSFET

6. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = -55 °C 54 - - V
ID = 250 µA; VGS = 0 V; Tj = 25 °C 60 - - V
VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 25 °C; 2 3 4 V
see Figure 10; see Figure 11
VGSth gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 175 °C; 1 - - V
see Figure 11
ID = 1 mA; VDS = VGS; Tj = -55 °C; - - 4.6 V
see Figure 11
IDSS drain leakage current VDS = 60 V; VGS = 0 V; Tj = 25 °C - 0.05 10 µA
VDS = 60 V; VGS = 0 V; Tj = 125 °C - - 100 µA
IGSS gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA
VGS = -20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA
RDSon drain-source on-state VGS = 10 V; ID = 25 A; Tj = 175 °C; - 13.3 18 mΩ
resistance see Figure 12
VGS = 10 V; ID = 25 A; Tj = 25 °C; - 5.9 7.8 mΩ
see Figure 13; see Figure 9
RG gate resistance f = 1 MHz - 0.98 - Ω
Dynamic characteristics
QG(tot) total gate charge ID = 25 A; VDS = 30 V; VGS = 10 V; - 38.7 - nC
QGS gate-source charge see Figure 14; see Figure 15 - 12.9 - nC
QGS(th) pre-threshold gate-source - 6.9 - nC
charge
QGS(th-pl) post-threshold gate-source - 6 - nC
charge
QGD gate-drain charge ID = 25 A; VDS = 30 V; VGS = 10 V; - 10.6 - nC
see Figure 15; see Figure 14
VGS(pl) gate-source plateau voltage ID = 25 A; VDS = 30 V; see Figure - 5.6 - V
14; see Figure 15
Ciss input capacitance VDS = 30 V; VGS = 0 V; f = 1 MHz; - 2651 - pF
Tj = 25 °C; see Figure 16; see
Figure 8
Coss output capacitance VDS = 30 V; VGS = 0 V; f = 1 MHz; - 342 - pF
Tj = 25 °C; see Figure 16
Crss reverse transfer capacitance VDS = 30 V; VGS = 0 V; f = 1 MHz; - 183 - pF
Tj = 25 °C; see Figure 16; see
Figure 8
td(on) turn-on delay time VDS = 30 V; RL = 1.2 Ω; VGS = 10 V; - 19 - ns
tr rise time RG(ext) = 4.7 Ω - 21 - ns
td(off) turn-off delay time - 37 - ns
tf fall time - 13 - ns

PSMN7R6-60PS All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved

Product data sheet Rev. 03 — 28 October 2010 5 of 14


Nexperia PSMN7R6-60PS
N-channel 60 V 7.8 mΩ standard level MOSFET

Table 6. Characteristics …continued


Symbol Parameter Conditions Min Typ Max Unit
Source-drain diode
VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; - 0.86 1.2 V
see Figure 17
trr reverse recovery time IS = 25 A; dIS/dt = 100 A/µs; - 40.4 - ns
Qr recovered charge VGS = 0 V; VDS = 30 V - 56 - nC

003aad663 003aad669
100 160
ID 15 6.0
gfs
(A) 10 5.5
(S)
80 8.0
120

60

80
5.0
40

40
20
VGS (V) = 4.5

0 0
0 0.5 1 1.5 2 0 20 40 60 80 100
VDS (V) ID (A)

Fig 5. Output characteristics: drain current as a Fig 6. Forward transconductance as a function of


function of drain-source voltage; typical values drain current; typical values

003aad665 003aad664
100 4000
ID Ciss
C
(A) (pF)
80
3000

60
Crss
2000

40

Tj = 175 °C Tj = 25 °C 1000
20

0 0
0 2 4 VGS (V) 6 0 5 10 15 20
VGS (V)

Fig 7. Transfer characteristics: drain current as a Fig 8. Input and reverse transfer capacitances as a
function of gate-source voltage; typical values function of gate-source voltage; typical values

PSMN7R6-60PS All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved

Product data sheet Rev. 03 — 28 October 2010 6 of 14


Nexperia PSMN7R6-60PS
N-channel 60 V 7.8 mΩ standard level MOSFET

003aad666 03aa35
20 10−1
RDSon ID
(mΩ) (A)
min typ max
16 10−2

12 10−3

8 10−4

4 10−5

0 10−6
0 5 10 15 20 0 2 4 6
VGS (V) VGS (V)

Fig 9. Drain-source on-state resistance as a function Fig 10. Sub-threshold drain current as a function of
of gate-source voltage; typical values gate-source voltage

003aad280 003aad696
5 2.4
VGS(th) a
(V)
2
4
max

1.6
3
typ
1.2

2 min
0.8

1
0.4

0 0
−60 0 60 120 180 -60 0 60 120 180
Tj (°C) Tj (°C)

Fig 11. Gate-source threshold voltage as a function of Fig 12. Normalized drain-source on-state resistance
junction temperature factor as a function of junction temperature.

PSMN7R6-60PS All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved

Product data sheet Rev. 03 — 28 October 2010 7 of 14


Nexperia PSMN7R6-60PS
N-channel 60 V 7.8 mΩ standard level MOSFET

003aad667 003aad671
30 10
4.5 5.0 5.5 VGS
RDSon (V)
30 V
(mΩ) 8
VDS = 12 V 48 V
20
6

4
10 6.0

VGS (V) = 15 10.0 8.0

0 0
0 20 40 60 80 100 0 10 20 30 40 50
ID (A) QG (nC)

Fig 13. Drain-source on-state resistance as a function Fig 14. Gate-source voltage as a function of gate
of drain current; typical values charge; typical values

003aad668
104
VDS

C
ID
(pF)
Ciss
VGS(pl)

VGS(th) 103

VGS
QGS1 QGS2
Coss
QGS QGD
QG(tot)
Crss
003aaa508
102
10−2 10−1 1 10 102
VDS (V)

Fig 15. Gate charge waveform definitions Fig 16. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values

PSMN7R6-60PS All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved

Product data sheet Rev. 03 — 28 October 2010 8 of 14


Nexperia PSMN7R6-60PS
N-channel 60 V 7.8 mΩ standard level MOSFET

003aad670
100
IS
(A)
80

60

40

Tj = 175 °C Tj = 25 °C
20

0
0 0.3 0.6 0.9 1.2
VSD (V)

Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values

PSMN7R6-60PS All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved

Product data sheet Rev. 03 — 28 October 2010 9 of 14


Nexperia PSMN7R6-60PS
N-channel 60 V 7.8 mΩ standard level MOSFET

7. Package outline

Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78

E A
p A1

q mounting
D1 base

L1(1) L2(1)

Q
b1(2)
L (3×)

b2(2)
(2×)
1 2 3

b(3×) c

e e

0 5 10 mm
scale
DIMENSIONS (mm are the original dimensions)
L2(1)
UNIT A A1 b b1(2) b2(2) c D D1 E e L L1(1) p q Q
max.
4.7 1.40 0.9 1.6 1.3 0.7 16.0 6.6 10.3 15.0 3.30 3.8 3.0 2.6
mm 2.54 3.0
4.1 1.25 0.6 1.0 1.0 0.4 15.2 5.9 9.7 12.8 2.79 3.5 2.7 2.2

Notes
1. Lead shoulder designs may vary.
2. Dimension includes excess dambar.

OUTLINE REFERENCES EUROPEAN


ISSUE DATE
VERSION IEC JEDEC JEITA PROJECTION
08-04-23
SOT78 3-lead TO-220AB SC-46
08-06-13

Fig 18. Package outline SOT78 (TO-220AB)

PSMN7R6-60PS All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved

Product data sheet Rev. 03 — 28 October 2010 10 of 14


Nexperia PSMN7R6-60PS
N-channel 60 V 7.8 mΩ standard level MOSFET

8. Revision history
Table 7. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PSMN7R6-60PS v.3 20101028 Product data sheet - PSMN7R6-60PS v.2
Modifications: • Various changes to content.
PSMN7R6-60PS v.2 20100122 Product data sheet - -

PSMN7R6-60PS All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved

Product data sheet Rev. 03 — 28 October 2010 11 of 14


Nexperia PSMN7R6-60PS
N-channel 60 V 7.8 mΩ standard level MOSFET

9. Legal information

9.1 Data sheet status


Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nexperia.com.

9.2 Definitions Suitability for use — Nexperia products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
Draft — The document is a draft version only. The content is still under safety-critical systems or equipment, nor in applications where failure or
internal review and subject to formal approval, which may result in malfunction of a Nexperia product can reasonably be expected
modifications or additions. Nexperia does not give any to result in personal injury, death or severe property or environmental
representations or warranties as to the accuracy or completeness of damage. Nexperia accepts no liability for inclusion and/or use of
information included herein and shall have no liability for the consequences of Nexperia products in such equipment or applications and
use of such information. therefore such inclusion and/or use is at the customer’s own risk.

Short data sheet — A short data sheet is an extract from a full data sheet Quick reference data — The Quick reference data is an extract of the
with the same product type number(s) and title. A short data sheet is intended product data given in the Limiting values and Characteristics sections of this
for quick reference only and should not be relied upon to contain detailed and document, and as such is not complete, exhaustive or legally binding.
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Nexperia sales Applications — Applications that are described herein for any of these
office. In case of any inconsistency or conflict with the short data sheet, the products are for illustrative purposes only. Nexperia makes no
full data sheet shall prevail. representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between Customers are responsible for the design and operation of their applications
Nexperia and its customer, unless Nexperia and and products using Nexperia products, and Nexperia
customer have explicitly agreed otherwise in writing. In no event however, accepts no liability for any assistance with applications or customer product
shall an agreement be valid in which the Nexperia product is design. It is customer’s sole responsibility to determine whether the Nexperia
deemed to offer functions and qualities beyond those described in the product is suitable and fit for the customer’s applications and
Product data sheet. products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
9.3 Disclaimers applications and products.

Limited warranty and liability — Information in this document is believed to Nexperia does not accept any liability related to any default,
be accurate and reliable. However, Nexperia does not give any damage, costs or problem which is based on any weakness or default in the
representations or warranties, expressed or implied, as to the accuracy or customer’s applications or products, or the application or use by customer’s
completeness of such information and shall have no liability for the third party customer(s). Customer is responsible for doing all necessary
consequences of use of such information. testing for the customer’s applications and products using Nexperia
products in order to avoid a default of the applications and
In no event shall Nexperia be liable for any indirect, incidental, the products or of the application or use by customer’s third party
punitive, special or consequential damages (including - without limitation - lost customer(s). Nexperia does not accept any liability in this respect.
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such Limiting values — Stress above one or more limiting values (as defined in
damages are based on tort (including negligence), warranty, breach of the Absolute Maximum Ratings System of IEC 60134) will cause permanent
contract or any other legal theory. damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
Notwithstanding any damages that customer might incur for any reason the Recommended operating conditions section (if present) or the
whatsoever, Nexperia’s aggregate and cumulative liability towards Characteristics sections of this document is not warranted. Constant or
customer for the products described herein shall be limited in accordance repeated exposure to limiting values will permanently and irreversibly affect
with the Terms and conditions of commercial sale of Nexperia. the quality and reliability of the device.

Right to make changes — Nexperia reserves the right to make Terms and conditions of commercial sale — Nexperia
changes to information published in this document, including without products are sold subject to the general terms and conditions of commercial
limitation specifications and product descriptions, at any time and without sale, as published at http://www.nexperia.com/profile/terms, unless otherwise
notice. This document supersedes and replaces all information supplied prior agreed in a valid written individual agreement. In case an individual
to the publication hereof. agreement is concluded only the terms and conditions of the respective

PSMN7R6-60PS All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved

Product data sheet Rev. 03 — 28 October 2010 12 of 14


Nexperia PSMN7R6-60PS
N-channel 60 V 7.8 mΩ standard level MOSFET

agreement shall apply. Nexperia hereby expressly objects to product for such automotive applications, use and specifications, and (b)
applying the customer’s general terms and conditions with regard to the whenever customer uses the product for automotive applications beyond
purchase of Nexperia products by customer. Nexperia’s specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies Nexperia for any
No offer to sell or license — Nothing in this document may be interpreted or liability, damages or failed product claims resulting from customer design and
construed as an offer to sell products that is open for acceptance or the grant, use of the product for automotive applications beyond Nexperia’s
conveyance or implication of any license under any copyrights, patents or standard warranty and Nexperia’s product specifications.
other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein may 9.4 Trademarks
be subject to export control regulations. Export might require a prior
authorization from national authorities. Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific Nexperia product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. Nexperia
accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.

In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without Nexperia’s warranty of the

10. Contact information


For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: [email protected]

PSMN7R6-60PS All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved

Product data sheet Rev. 03 — 28 October 2010 13 of 14


Nexperia PSMN7R6-60PS
N-channel 60 V 7.8 mΩ standard level MOSFET

11. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1 General description . . . . . . . . . . . . . . . . . . . . . .1
1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . .1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . .2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2
5 Thermal characteristics . . . . . . . . . . . . . . . . . . .4
6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5
7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10
8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 11
9 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12
9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12
9.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
9.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13
10 Contact information. . . . . . . . . . . . . . . . . . . . . .13

© Nexperia B.V. 2017. All rights reserved


For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: [email protected]
Date of release: 28 October 2010
Mouser Electronics

Authorized Distributor

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