Description: N-Channel Enhancement Mode Field-Effect Transistor

BSH111
N-channel enhancement mode field-effect transistor

M3D088
Rev. 02 — 26 April 2002 Product data
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
Product availability:
BSH111 in SOT23.
2. Features
■ TrenchMOS™ technology
■ Very fast switching
■ Low threshold voltage
■ Subminiature surface mount package.
3. Applications
■ Battery management
■ High speed switch
■ Logic level translator.
4. Pinning information
Table 1: Pinning - SOT23, simplified outline and symbol
Pin Description Simplified outline Symbol
1 gate (g)
3 d
2 source (s)
3 drain (d)
g
1 2 MBB076 s
Top view MSB003
SOT23
Philips Semiconductors BSH111
5. Quick reference data

Table 2: Quick reference data
Symbol Parameter Conditions Typ Max Unit
VDS drain-source voltage (DC) 25 °C ≤ Tj ≤ 150 °C - 55 V
ID drain current (DC) Tsp = 25 °C; VGS = 4.5 V - 335 mA
Ptot total power dissipation Tsp = 25 °C - 0.83 W
Tj junction temperature - 150 °C
RDSon drain-source on-state resistance VGS = 4.5 V; ID = 500 mA 2.3 4.0 Ω
VGS = 2.5 V; ID = 75 mA 2.4 5.0 Ω
VGS = 1.8 V; ID = 75 mA 3.1 8.0 Ω
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) 25 °C ≤ Tj ≤ 150 °C - 55 V
VDGR drain-gate voltage (DC) 25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ - 55 V
VGS gate-source voltage - ±10 V
ID drain current (DC) Tsp = 25 °C; VGS = 4.5 V; - 335 mA
Figure 2 and 3
Tsp = 100 °C; VGS = 4.5 V; Figure 2 - 212 mA
IDM peak drain current Tsp = 25 °C; pulsed; tp ≤ 10 µs; - 1.3 A
Figure 3
Ptot total power dissipation Tsp = 25 °C; Figure 1 - 0.83 W
Tstg storage temperature −65 +150 °C
Tj junction temperature −65 +150 °C
Source-drain diode
IS source (diode forward) current (DC) Tsp = 25 °C - 335 mA
ISM peak source (diode forward) current Tsp = 25 °C; pulsed; tp ≤ 10 µs - 1.3 A
9397 750 09629 © Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data Rev. 02 — 26 April 2002 2 of 13

03aa17 03aa25
120 120
Pder
I der
(%)
(%)
80 80
40 40
0 0
0 50 100 150 200 0 50 100 150 200
Tsp (°C) Tsp (°C)
P tot VGS ≥ 4.5 V

P der = ---------------------- × 100%
P °
ID
tot ( 25 C ) I der = ------------------- × 100%
I °
D ( 25 C )
Fig 1. Normalized total power dissipation as a Fig 2. Normalized continuous drain current as a
function of solder point temperature. function of solder point temperature.
03aa71
10
ID
Limit RDSon = VDS/ ID
(A)
tp = 10 µs
1
100 µs
10-1 1 ms
DC 10 ms
100 ms
10-2
1 10 102
VDS (V)
Tsp = 25 °C; IDM is single pulse.

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.

7. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-sp) thermal resistance from junction to mounted on metal clad - - 150 K/W
solder point substrate; Figure 4
Rth(j-a) thermal resistance from junction to minimum footprint; mounted on - 350 - K/W
ambient printed circuit board
7.1 Transient thermal impedance
03aa69
103
Zth(j-sp)
(K/W)
102 δ = 0.5
0.2
0.1
tp
0.05
P δ=
10 T
0.02
tp t
single pulse T
1
10-5 10-4 10-3 10-2 10-1 1 10
tp (s)
Mounted on metal clad substrate.

Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration.

8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Static characteristics
V(BR)DSS drain-source breakdown ID = 10 µA; VGS = 0 V
voltage Tj = 25 °C 55 75 - V
Tj = −55 °C 50 - - V
VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS;
Figure 9
Tj = 25 °C 0.4 1.0 1.3 V
Tj = 150 °C 0.3 - - V
Tj = −55 °C - - 2.5 V
IDSS drain-source leakage current VDS = 44 V; VGS = 0 V
Tj = 25 °C - 0.01 1.0 µA
Tj = 150 °C - - 10 µA
IGSS gate-source leakage current VGS = ±8 V; VDS = 0 V - 10 100 nA
RDSon drain-source on-state VGS = 2.5 V; ID = 75 mA;
resistance Figure 7 and 8
Tj = 25 °C - 2.4 5 Ω
Tj = 150 °C - - 7.4 Ω
VGS = 4.5 V; ID = 500 mA;
Figure 7 and 8
Tj = 25 °C - 2.3 4 Ω
VGS = 1.8 V; ID = 75 mA;
Figure 7 and 8
Tj = 25 °C - 3.1 8 Ω
Dynamic characteristics
gfs forward transconductance VDS = 10 V; ID = 200 mA; 100 380 - mS
Figure 11
Qg(tot) total gate charge ID = 0.5 A; VDS = 44 V; - 1.0 - nC
Qgs gate-source charge VGS = 8 V; Figure 14 - 0.05 - nC
Qgd gate-drain (Miller) charge - 0.5 - nC
Ciss input capacitance VGS = 0 V; VDS = 10 V; - 17 40 pF
Coss output capacitance f = 1 MHz; Figure 12 - 7 30 pF
Crss reverse transfer capacitance - 4 10 pF
ton turn-on time VDD = 50 V; RD = 250 Ω; - 4 10 ns
toff turn-off time VGS = 10 V; RG = 50 Ω; - 11 15 ns
RGS = 50 Ω

Table 5: Characteristics…continued
Tj = 25 °C unless otherwise specified
Source-drain diode
VSD source-drain (diode forward) IS = 300 mA; VGS = 0 V; - 0.95 1.5 V
voltage Figure 13
trr reverse recovery time IS = 300 mA; - 30 - ns
Qr recovered charge dIS/dt = −100 A/µs; - 30 - nC
VGS = 0 V; VDS = 25 V

03aa73 03aa75
0.8 0.8
I ID
D
(A) VGS = 4.5 V (A)
Tj = 25 °C
0.6 0.6
150 °C
0.4 0.4
3V
2V 0.2
0.2
1.8 V
1.6 V
1.4 V
0 0
0 0.4 0.8 1.2 1.6 2 0 1 2 3 4 5
VDS (V) VGS (V)
Tj = 25 °C Tj = 25 °C and 150 °C; VDS > ID × RDSon

Fig 5. Output characteristics: drain current as a Fig 6. Transfer characteristics: drain current as a
function of drain-source voltage; typical values. function of gate-source voltage; typical values.
03aa74 03aa28
20 2.4
RDSon 1.4 V
(Ω) a
1.6 V
16
1.8
1.8 V
12
2V
1.2
8
3V
0.6
4 VGS = 4.5 V
0 0
0 0.2 0.4 0.6 0.8
-60 0 60 120 180
ID (A)
Tj (°C)
Tj = 25 °C R DSon
a = ---------------------------
-
R DSon ( 25 °C )
Fig 7. Drain-source on-state resistance as a function Fig 8. Normalized drain-source on-state resistance
of drain current; typical values. factor as a function of junction temperature.

03aa38 03aa89
2 10-1
VGS(th) ID
(V) (A)
1.6 10-2
1.2 10-3
min typ
typ
0.8 10-4
min
0.4 10-5
0 10-6
-60 0 60 120 180 0 0.4 0.8 1.2 1.6 2
Tj (°C) VGS (V)
ID = 1 mA; VDS = VGS Tj = 25 °C; VDS = 5 V

Fig 9. Gate-source threshold voltage as a function of Fig 10. Sub-threshold drain current as a function of
junction temperature. gate-source voltage.
03aa76 03aa78
0.5
102
gfs
C
(S)
(pF)
0.4 Tj = 25 °C
Ciss
0.3
150 °C
10
0.2 Coss
Crss
0.1
0 1
0 0.2 0.4 0.6
ID (A) 10-1 1 10 102
VDS (V)
Tj = 25 °C and 150 °C; VDS > ID × RDSon VGS = 0 V; f = 1 MHz

Fig 11. Forward transconductance as a function of Fig 12. Input, output and reverse transfer capacitances
drain current; typical values. as a function of drain-source voltage; typical
values.

03aa77 03ab08
1 8
IS VGS
(A) (V)
0.8
6
150 °C
0.6
4
Tj = 25 °C
0.4
2
0.2
0 0
0 0.4 0.8 1.2 1.6 0 0.2 0.4 0.6 0.8 1
VSD (V)
QG (nC)
Tj = 25 °C and 150 °C; VGS = 0 V ID = 0.5 A; VDS = 44 V

Fig 13. Source (diode forward) current as a function of Fig 14. Gate-source voltage as a function of gate
source-drain (diode forward) voltage; typical charge; typical values.
values.

9. Package outline
Plastic surface mounted package; 3 leads SOT23
D B E A X
HE v M A
A1
1 2 c
e1 bp w M B Lp
e
detail X
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)

A1
UNIT A bp c D E e e1 HE Lp Q v w
max.
1.1 0.48 0.15 3.0 1.4 2.5 0.45 0.55
mm 0.1 1.9 0.95 0.2 0.1
0.9 0.38 0.09 2.8 1.2 2.1 0.15 0.45
OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC EIAJ PROJECTION
97-02-28
SOT23 TO-236AB 99-09-13
Fig 15. SOT23.

10. Revision history
Table 6: Revision history

Rev Date CPCN Description
02 20020426 - Product data (9397 750 09629)
Modifications
• VGS data updated.
01 20000807 - Product specification; initial version.

11. Data sheet status
Data sheet status[1] Product status[2] Definition

Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors
reserves the right to change the specification in any manner without notice.
Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a
later date. Philips Semiconductors reserves the right to change the specification without notice, in order to
improve the design and supply the best possible product.
Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to
make changes at any time in order to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change Notification (CPCN) procedure
SNW-SQ-650A.
[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
12. Definitions 13. Disclaimers

Short-form specification — The data in a short-form specification is Life support — These products are not designed for use in life support
extracted from a full data sheet with the same type number and title. For appliances, devices, or systems where malfunction of these products can
detailed information see the relevant data sheet or data handbook. reasonably be expected to result in personal injury. Philips Semiconductors
Limiting values definition — Limiting values given are in accordance with customers using or selling these products for use in such applications do so
the Absolute Maximum Rating System (IEC 60134). Stress above one or at their own risk and agree to fully indemnify Philips Semiconductors for any
more of the limiting values may cause permanent damage to the device. damages resulting from such application.
These are stress ratings only and operation of the device at these or at any Right to make changes — Philips Semiconductors reserves the right to
other conditions above those given in the Characteristics sections of the make changes, without notice, in the products, including circuits, standard
specification is not implied. Exposure to limiting values for extended periods cells, and/or software, described or contained herein in order to improve
may affect device reliability. design and/or performance. Philips Semiconductors assumes no
Application information — Applications that are described herein for any responsibility or liability for the use of any of these products, conveys no
of these products are for illustrative purposes only. Philips Semiconductors licence or title under any patent, copyright, or mask work right to these
make no representation or warranty that such applications will be suitable for products, and makes no representations or warranties that these products are
the specified use without further testing or modification. free from patent, copyright, or mask work right infringement, unless otherwise
specified.
14. Trademarks
TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V.
Contact information
For additional information, please visit http://www.semiconductors.philips.com.
For sales office addresses, send e-mail to: [email protected]. Fax: +31 40 27 24825

Contents
1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
4 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
5 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
6 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
7 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
7.1 Transient thermal impedance . . . . . . . . . . . . . . 4
8 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11
11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12
12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
14 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
© Koninklijke Philips Electronics N.V. 2002.

Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 26 April 2002 Document order number: 9397 750 09629

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BSH111

N-channel enhancement mode field-effect transistor

Top view MSB003

5. Quick reference data

Product data Rev. 02 — 26 April 2002 2 of 13

P tot VGS ≥ 4.5 V

Tsp = 25 °C; IDM is single pulse.

Product data Rev. 02 — 26 April 2002 3 of 13

7.1 Transient thermal impedance

Mounted on metal clad substrate.

Product data Rev. 02 — 26 April 2002 4 of 13

Product data Rev. 02 — 26 April 2002 5 of 13

Product data Rev. 02 — 26 April 2002 6 of 13

Tj = 25 °C Tj = 25 °C and 150 °C; VDS > ID × RDSon

Product data Rev. 02 — 26 April 2002 7 of 13

ID = 1 mA; VDS = VGS Tj = 25 °C; VDS = 5 V

Tj = 25 °C and 150 °C; VDS > ID × RDSon VGS = 0 V; f = 1 MHz

Product data Rev. 02 — 26 April 2002 8 of 13

Tj = 25 °C and 150 °C; VGS = 0 V ID = 0.5 A; VDS = 44 V

Product data Rev. 02 — 26 April 2002 9 of 13

DIMENSIONS (mm are the original dimensions)

OUTLINE REFERENCES EUROPEAN

Fig 15. SOT23.

Product data Rev. 02 — 26 April 2002 10 of 13

10. Revision history

Table 6: Revision history

Product data Rev. 02 — 26 April 2002 11 of 13

11. Data sheet status

Data sheet status[1] Product status[2] Definition

12. Definitions 13. Disclaimers

Product data Rev. 02 — 26 April 2002 12 of 13

© Koninklijke Philips Electronics N.V. 2002.

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