S808 Series

Rev. 2.
S-808 Series
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
The S-808 Series is a high-precision voltage detector developed using

CMOS process. The detection voltage is fixed internally, with an
accuracy of 2.0%. Two output types, Nch open-drain and CMOS
output, are available.
n Features
n Applications
Ultra-low current consumption
Battery checker
1.3 A typ. (VDD=1.5 V)
Power failure detector

Power monitor for pagers, calculators,
organizers,
Products with detection voltage of 1.4 V or less

electronic
Constant voltage power monitor for cameras,
0.8A typ. (VDD=3.5 V)

Products with detection voltage of 1.5 V or more
video equipment, communication devices
High-precision detection voltage
Power monitor for microcomputers and reset

CPUs
2.0%
Low operating voltage
0.7 to 5.0 V
Products with detection voltage of 1.4 V or less
0.95 to 10.0 V
Products with a detection voltage of 1.5 V or more
Hysteresis characteristics
5% typ.
Detection voltage
0.8 to 6.0 V
(0.1 V step)
Nch open-drain active low and CMOS active low output
SC-82AB
Super-small plastic package
TO-92
Plastic package
SOT-89-3
Miniaturized power mold plastic package
SOT-23-5
Very-small plastic package
n Pin Assignment
(1)
SC-82AB
(2)
TO-92
Top view
4
3
SOT-89-3
(4) SOT-23-5
Top view
5
4
Top view
1
2
3
4
(3)
1
2
3
OUT
VDD
NC
VSS
OUT
VDD
VSS
1
2
3
2
1 2 3
OUT
VDD
VSS
1
2
3
4
5
OUT
VDD
VSS
NC
NC
Bottom view
Figure 1
Seiko Instruments Inc.

S-808 Series
n Block Diagram
(1) Nch open-drain active low output
(2) CMOS active low output
VDD
VDD
OUT
OUT
*
*
VREF
VREF
VSS
VSS
*Parasitic diode
Figure 2
n Selection Guide
S-808XX
AX XX - XXX - T2
Directions of the IC for taping specifications
Product name (abbreviation)
Package name (abbreviation)
NP: SC-82AB
MP: SOT-23-5
UP: SOT-89-3
Y: TO-92
Output type
N: Nch open-drain (active low output)
L: CMOS (active low output)
Detection voltage rank

S-808 Series
Table 1
Detection voltage range
(V)
Hysteresis width
VHYS typ.(V)
0.8V2.0%
Nch Open Drain(Low)
0.034
SC-82AB
S-80808ANNP-E7Y-T2
TO-92
SOT-89-3
SOT-23-5
0.9V2.0%
0.044
S-80809ANNP-E7Z-T2
1.0V2.0%
0.054
S-80810ANNP-E70-T2
1.1V2.0%
0.064
S-80811ANNP-E71-T2
1.2V2.0%
0.073
S-80812ANNP-E72-T2
1.3V2.0%
0.083
S-80813ANNP-EDA-T2
1.4V2.0%
0.093
S-80814ANNP-EDB-T2
1.5V2.0%
0.075
S-80815ANNP-EDC-T2
S-80815ANY
S-80815ANUP-EDC-T2
1.6V2.0%
0.080
S-80816ANNP-EDD-T2
S-80816ANY
S-80816ANUP-EDD-T2
1.7V2.0%
0.085
S-80817ANNP-EDE-T2
S-80817ANY
S-80817ANUP-EDE-T2 S-80817ANMP-EDE-T2
1.8V2.0%
0.090
S-80818ANNP-EDF-T2
S-80818ANY
S-80818ANUP-EDF-T2
1.9V2.0%
0.095
S-80819ANNP-EDG-T2
S-80819ANY
S-80819ANUP-EDG-T2 S-80819ANMP-EDG-T2
2.0V2.0%
0.100
S-80820ANNP-EDH-T2
S-80820ANY
S-80820ANUP-EDH-T2 S-80820ANMP-EDH-T2
2.1V2.0%
0.105
S-80821ANNP-EDJ-T2
S-80821ANY
S-80821ANUP-EDJ-T2
2.2V2.0%
0.110
S-80822ANNP-EDK-T2
S-80822ANY
S-80822ANUP-EDK-T2 S-80822ANMP-EDK-T2
2.3V2.0%
0.115
S-80823ANNP-EDL-T2
S-80823ANY
S-80823ANUP-EDL-T2
2.4V2.0%
0.120
S-80824ANNP-EDM-T2
S-80824ANY
S-80824ANUP-EDM-T2 S-80824ANMP-EDM-T2
2.5V2.0%
0.125
S-80825ANNP-EDN-T2
S-80825ANY
S-80825ANUP-EDN-T2 S-80825ANMP-EDN-T2
2.6V2.0%
0.130
S-80826ANNP-EDP-T2
S-80826ANY
S-80826ANUP-EDP-T2
2.7V2.0%
0.135
S-80827ANNP-EDQ-T2
S-80827ANY
S-80827ANUP-EDQ-T2 S-80827ANMP-EDQ-T2
2.8V2.0%
0.140
S-80828ANNP-EDR-T2
S-80828ANY
S-80828ANUP-EDR-T2 S-80828ANMP-EDR-T2
2.9V2.0%
0.145
S-80829ANNP-EDS-T2
S-80829ANY
S-80829ANUP-EDS-T2
3.0V2.0%
0.150
S-80830ANNP-EDT-T2
S-80830ANY
S-80830ANUP-EDT-T2
S-80830ANMP-EDT-T2
3.1V2.0%
0.155
S-80831ANNP-EDV-T2
S-80831ANY
S-80831ANUP-EDV-T2
3.2V2.0%
0.160
S-80832ANNP-EDW -T2
S-80832ANY
S-80832ANUP-EDW -T2 S-80832ANMP-EDW -T2
3.3V2.0%
0.165
S-80833ANNP-EDX-T2
S-80833ANY
S-80833ANUP-EDX-T2 S-80833ANMP-EDX-T2
3.4V2.0%
0.170
S-80834ANNP-EDY-T2
S-80834ANY
S-80834ANUP-EDY-T2
S-80834ANMP-EDY-T2
3.5V2.0%
0.175
S-80835ANNP-EDZ-T2
S-80835ANY
S-80835ANUP-EDZ-T2
S-80835ANMP-EDZ-T2
3.6V2.0%
0.180
S-80836ANNP-ED0-T2
S-80836ANY
S-80836ANUP-ED0-T2
S-80836ANMP-ED0-T2
3.7V2.0%
0.185
S-80837ANNP-ED1-T2
S-80837ANY
S-80837ANUP-ED1-T2
3.8V2.0%
0.190
S-80838ANNP-ED2-T2
S-80838ANY
S-80838ANUP-ED2-T2
3.9V2.0%
0.195
S-80839ANNP-ED3-T2
S-80839ANY
S-80839ANUP-ED3-T2
S-80839ANMP-ED3-T2
4.0V2.0%
0.200
S-80840ANNP-ED4-T2
S-80840ANY
S-80840ANUP-ED4-T2
S-80840ANMP-ED4-T2
4.1V2.0%
0.205
S-80841ANNP-ED5-T2
S-80841ANY
S-80841ANUP-ED5-T2
4.2V2.0%
0.210
S-80842ANNP-ED6-T2
S-80842ANY
S-80842ANUP-ED6-T2
S-80842ANMP-ED6-T2
4.3V2.0%
0.215
S-80843ANNP-ED7-T2
S-80843ANY
S-80843ANUP-ED7-T2
4.4V2.0%
0.220
S-80844ANNP-ED8-T2
S-80844ANY
S-80844ANUP-ED8-T2
S-80844ANMP-ED8-T2
4.5V2.0%
0.225
S-80845ANNP-ED9-T2
S-80845ANY
S-80845ANUP-ED9-T2
S-80845ANMP-ED9-T2
4.6V2.0%
0.230
S-80846ANNP-EJA-T2
S-80846ANY
S-80846ANUP-EJA-T2
4.7V2.0%
0.235
S-80847ANNP-EJB-T2
S-80847ANY
S-80847ANUP-EJB-T2
4.8V2.0%
0.240
S-80848ANNP-EJC-T2
S-80848ANY
S-80848ANUP-EJC-T2
4.9V2.0%
0.245
S-80849ANNP-EJD-T2
S-80849ANY
S-80849ANUP-EJD-T2
5.0V2.0%
0.250
S-80850ANNP-EJE-T2
S-80850ANY
S-80850ANUP-EJE-T2
S-80850ANMP-EJE-T2
5.1V2.0%
0.255
S-80851ANNP-EJF-T2
S-80851ANY
S-80851ANUP-EJF-T2
S-80851ANMP-EJF-T2
5.2V2.0%
0.260
S-80852ANNP-EJG-T2
S-80852ANUP-EJG-T2
5.3V2.0%
0.265
S-80853ANNP-EJH-T2
S-80853ANY
5.4V2.0%
0.270
S-80854ANNP-EJJ-T2
5.5V2.0%
0.275
S-80855ANNP-EJK-T2
5.6V2.0%
0.280
S-80856ANNP-EJL-T2
5.7V2.0%
0.285
S-80857ANNP-EJM-T2
5.8V2.0%
0.290
S-80858ANNP-EJN-T2
5.9V2.0%
0.295
S-80859ANNP-EJP-T2
6.0V2.0%
0.300
S-80860ANNP-EJQ-T2
S-80860ANUP-EJQ-T2
S-80818ANMP-EDF-T2
S-80821ANMP-EDJ-T2
S-80823ANMP-EDL-T2

S-808 Series
Detection voltage range

(V)
Hysteresis width
VHYS typ.(V)
0.8V2.0%
CMOS Output Drain(Low)
0.034
SC-82AB
S-80808ALNP-E5Y-T2
TO-92
SOT-89-3
SOT-23-5
0.9V2.0%
0.044
S-80809ALNP-E5Z-T2
1.0V2.0%
0.054
S-80810ALNP-E50-T2
1.1V2.0%
0.064
S-80811ALNP-E51-T2
1.2V2.0%
0.073
S-80812ALNP-E52-T2
1.3V2.0%
0.083
S-80813ALNP-EAA-T2
1.4V2.0%
0.093
S-80814ALNP-EAB-T2
1.5V2.0%
0.075
S-80815ALNP-EAC-T2
S-80815ALY
S-80815ALUP-EAC-T2
S-80815ALMP-EAC-T2
1.6V2.0%
0.080
S-80816ALNP-EAD-T2
S-80816ALY
S-80816ALUP-EAD-T2
1.7V2.0%
0.085
S-80817ALNP-EAE-T2
S-80817ALY
S-80817ALUP-EAE-T2
1.8V2.0%
0.090
S-80818ALNP-EAF-T2
S-80818ALY
S-80818ALUP-EAF-T2
S-80818ALMP-EAF-T2
1.9V2.0%
0.095
S-80819ALNP-EAG-T2
S-80819ALY
S-80819ALUP-EAG-T2
S-80819ALMP-EAG-T2
2.0V2.0%
0.100
S-80820ALNP-EAH-T2
S-80820ALY
S-80820ALUP-EAH-T2
S-80820ALMP-EAH-T2
2.1V2.0%
0.105
S-80821ALNP-EAJ-T2
S-80821ALY
S-80821ALUP-EAJ-T2
S-80821ALMP-EAJ-T2
2.2V2.0%
0.110
S-80822ALNP-EAK-T2
S-80822ALY
S-80822ALUP-EAK-T2
2.3V2.0%
0.115
S-80823ALNP-EAL-T2
S-80823ALY
S-80823ALUP-EAL-T2
S-80823ALMP-EAL-T2
2.4V2.0%
0.120
S-80824ALNP-EAM-T2
S-80824ALY
S-80824ALUP-EAM-T2
2.5V2.0%
0.125
S-80825ALNP-EAN-T2
S-80825ALY
S-80825ALUP-EAN-T2
S-80825ALMP-EAN-T2
2.6V2.0%
0.130
S-80826ALNP-EAP-T2
S-80826ALY
S-80826ALUP-EAP-T2
2.7V2.0%
0.135
S-80827ALNP-EAQ-T2
S-80827ALY
S-80827ALUP-EAQ-T2
S-80827ALMP-EAQ-T2
2.8V2.0%
0.140
S-80828ALNP-EAR-T2
S-80828ALY
S-80828ALUP-EAR-T2
S-80828ALMP-EAR-T2
2.9V2.0%
0.145
S-80829ALNP-EAS-T2
S-80829ALY
S-80829ALUP-EAS-T2
3.0V2.0%
0.150
S-80830ALNP-EAT-T2
S-80830ALY
S-80830ALUP-EAT-T2
S-80830ALMP-EAT-T2
3.1V2.0%
0.155
S-80831ALNP-EAV-T2
S-80831ALY
S-80831ALUP-EAV-T2
3.2V2.0%
0.160
S-80832ALNP-EAW -T2
S-80832ALY
S-80832ALUP-EAW -T2 S-80832ALMP-EAW -T2
3.3V2.0%
0.165
S-80833ALNP-EAX-T2
S-80833ALY
S-80833ALUP-EAX-T2
3.4V2.0%
0.170
S-80834ALNP-EAY-T2
S-80834ALY
S-80834ALUP-EAY-T2
3.5V2.0%
0.175
S-80835ALNP-EAZ-T2
S-80835ALY
S-80835ALUP-EAZ-T2
S-80835ALMP-EAZ-T2
3.6V2.0%
0.180
S-80836ALNP-EA0-T2
S-80836ALY
S-80836ALUP-EA0-T2
3.7V2.0%
0.185
S-80837ALNP-EA1-T2
S-80837ALY
S-80837ALUP-EA1-T2
3.8V2.0%
0.190
S-80838ALNP-EA2-T2
S-80838ALY
S-80838ALUP-EA2-T2
3.9V2.0%
0.195
S-80839ALNP-EA3-T2
S-80839ALY
S-80839ALUP-EA3-T2
4.0V2.0%
0.200
S-80840ALNP-EA4-T2
S-80840ALY
S-80840ALUP-EA4-T2
S-80840ALMP-EA4-T2
4.1V2.0%
0.205
S-80841ALNP-EA5-T2
S-80841ALY
S-80841ALUP-EA5-T2
4.2V2.0%
0.210
S-80842ALNP-EA6-T2
S-80842ALY
S-80842ALUP-EA6-T2
S-80842ALMP-EA6-T2
4.3V2.0%
0.215
S-80843ALNP-EA7-T2
S-80843ALY
S-80843ALUP-EA7-T2
4.4V2.0%
0.220
S-80844ALNP-EA8-T2
S-80844ALY
S-80844ALUP-EA8-T2
4.5V2.0%
0.225
S-80845ALNP-EA9-T2
S-80845ALY
S-80845ALUP-EA9-T2
S-80845ALMP-EA9-T2
4.6V2.0%
0.230
S-80846ALNP-EEA-T2
S-80846ALY
S-80846ALUP-EEA-T2
4.7V2.0%
0.235
S-80847ALNP-EEB-T2
S-80847ALY
S-80847ALUP-EEB-T2
4.8V2.0%
0.240
S-80848ALNP-EEC-T2
S-80848ALY
S-80848ALUP-EEC-T2
4.9V2.0%
0.245
S-80849ALNP-EED-T2
S-80849ALY
S-80849ALUP-EED-T2
S-80849ALMP-EED-T2
5.0V2.0%
0.250
S-80850ALNP-EEE-T2
S-80850ALY
S-80850ALUP-EEE-T2
S-80850ALMP-EEE-T2
5.1V2.0%
0.255
S-80851ALNP-EEF-T2
S-80851ALY
S-80851ALUP-EEF-T2
S-80851ALMP-EEF-T2
5.2V2.0%
0.260
S-80852ALNP-EEG-T2
S-80852ALUP-EEG-T2
S-80852ALMP-EEG-T2
5.3V2.0%
0.265
S-80853ALNP-EEH-T2
5.4V2.0%
0.270
S-80854ALNP-EEJ-T2
5.5V2.0%
0.275
S-80855ALNP-EEK-T2
S-80855ALUP-EEK-T2
5.6V2.0%
0.280
S-80856ALNP-EEL-T2
5.7V2.0%
0.285
S-80857ALNP-EEM-T2
5.8V2.0%
0.290
S-80858ALNP-EEN-T2
5.9V2.0%
0.295
S-80859ALNP-EEP-T2
6.0V2.0%
0.300
S-80860ALNP-EEQ-T2
Remark: Some products described here in are under development. Please contact us for Samples.
S-80833ALMP-EAX-T2

S-808 Series
n Output Configurations
1. S-808 Series model numbering system
S-808 Series
Nch open-drain
(L reset type)
N is the last letter of the
model number.
e.g. S-80808AN
CMOS output
(L reset type)
L is the last letter of the
model number.
e.g. S-80808AL
2. Output configurations and their implementation
Nch(L)
Yes
Yes
No
Yes
Implementation
With different power supplies
With active low reset CPUs
With active high reset CPUs
With voltage divider variable resistors
Example with two power supplies

VDD1
VDD2
V/D
Nch
VSS
CPU
OUT
CMOS(L)
No
Yes
No
No
Examples with one power supply

VDD2
VDD1
V/D
CMOS
CPU
OUT
VSS
VDD2
VDD1
V/D
Nch
CPU
OUT
VSS
Figure 3

S-808 Series
n Absolute Maximum Ratings
1. Products with detection voltage of 1.4 V or less
Parameter
Power supply voltage
Output
Nch
voltage
open-drain
CMOS
Output current
Power dissipation
Operating temperature
Storage temperature
(Unless otherwise specified:

Symbol
Ratings
VDD - VSS
7
VOUT
VSS-0.3 to 7
VSS-0.3 to VDD+0.3
50
150
-20 to +70
-40 to +125
IOUT
Pd
Topr
Tstg
Ta=25C)
Unit
V
V
V
mA
mW
C
C
2. Products with detection voltage of 1.5 V or more
Parameter
Power supply voltage
Output
Nch
voltage
open-drain
CMOS
Output current
Power dissipation
Operating temperature
Storage temperature
Symbol
VDD - VSS
(Unless otherwise specified: Ta=25C)

Ratings
Unit
12
V
VOUT
IOUT
TO-92
Pd SOT-89-3
SC-82AB,SOT-23-5
Topr
Tstg
VSS-0.3 to 12
VSS-0.3 to VDD+0.3
50
400
500
150
-40 to +85
-40 to +125
V
mA
mW
C
C
Remark: This IC has a built-in protection circuit for static electricity. However, prevent contact with a large static
electricity or electrostatic voltage which exceeds the performance of the protection circuit

S-808 Series
n Electrical Characteristics
1. Detection voltage (0.8 V to 1.4 V)
Parameter
Detection voltage
Release voltage
Hysteresis width
Symbol
Conditions
-VDET
+VDET
VHYS
VDD=1.5V
Min.

Test
Typ.
Max.
Unit
circuit
S-80808AX
0.784
0.800
0.816
S-80809AX
0.882
0.900
0.918
S-80810AX
0.980
1.000
1.020
S-80811AX
1.078
1.100
1.122
S-80812AX
1.176
1.200
1.224
S-80813AX
1.274
1.300
1.326
S-80814AX
1.372
1.400
1.428
S-80808AX
0.802
0.834
0.867
S-80809AX
0.910
0.944
0.979
S-80810AX
1.017
1.054
1.091
S-80811AX
1.125
1.164
1.203
S-80812AX
1.232
1.273
1.315
S-80813AX
1.340
1.383
1.427
S-80814AX
1.448
1.493
1.538
S-80808AX
0.018
0.034
0.051
S-80809AX
0.028
0.044
0.061
S-80810AX
0.037
0.054
0.071
S-80811AX
0.047
0.064
0.081
S-80812AX
0.056
0.073
0.091
S-80813AX
0.066
0.083
0.101
S-80814AX
0.076
0.093
0.110
1.3
0.7
0.04
0.2
3.7
5.0
S-80808AX
S-80809AX
S-80810AX
Current
S-80811AX
ISS
consumption
VDD=2.0V
S-80812AX
S-80813AX
S-80814AX
Operating voltage
Output current
Leakage current of
output transistor
Temperature
characteristic of
-VDET
VDD
Nch
VDS=0.5V
Pch(CMOS
VDS=2.1V
2.9
5.8
output)
Nch(Nch
open drain)
VDD=4.5V
VDS=5.0V
VDD=5.0V
S-80808AX
0.18
S-80809AX
0.20
S-80810AX
0.22
S-80811AX
0.24
0.27
0.29
0.31
IOUT
ILEAK
-VDET
Ta
VDD=0.7V
Ta=-20C
to +70C
S-80812AX
S-80813AX
S-80814AX
mA
60
nA
mV/C

S-808 Series
Parameter
Detection voltage
Hysteresis width
Current
consumption
Operating voltage
Symbol
Conditions
-VDET
ISS
1.530
1.600
1.632
S-80817AX
1.666
1.700
1.734
S-80818AX
1.764
1.800
1.836
S-80819AX
1.862
1.900
1.938
S-80820AX
1.960
2.000
2.040
S-80821AX
2.058
2.100
2.142
S-80822AX
2.156
2.200
2.244
S-80823AX
2.254
2.300
2.346
S-80824AX
2.352
2.400
2.448
S-80825AX
2.450
2.500
2.550
S-80826AX
2.548
-VDET
0.03
2.600
-VDET
0.05
2.652
-VDET
0.08
0.8
0.95
2.4
10.0
VDD=1.2V
0.23
0.50
VDD=4.8V
0.36
0.62
0.54
VDS=0.5V
Pch(CMOS
output)
Leakage current of
output transistor
ILEAK
Response time
tPLH
VDS=0.5V
Nch(Nch
open drain)
Temperature
1.500
1.568
VDD
IOUT
-VDET
1.470
S-80816AX
VDD=3.5V
Nch

Test
Typ.
Max.
Unit
circuit
S-80815AX
VHYS
Output current
characteristic of
Min.
-VDET
Ta
Ta=-40C
to +85C
mA
VDS=10.0
V
VDD=10.0
V
0.1
60
mV/C
S-80815AX
0.18
S-80816AX
0.19
0.57
S-80817AX
0.20
0.60
S-80818AX
0.21
0.63
S-80819AX
0.22
0.66
S-80820AX
0.24
0.72
S-80821AX
0.25
0.75
S-80822AX
0.26
0.78
S-80823AX
0.27
0.81
S-80824AX
0.28
0.84
S-80825AX
0.29
0.87
S-80826AX
0.31
0.93

S-808 Series
Parameter
Detection voltage
Hysteresis width
Current
consumption
Operating voltage
Symbol
Conditions
-VDET
S-80827AX
2.646
2.700
2.754
S-80828AX
2.744
2.800
2.856
S-80829AX
2.842
2.900
2.958
S-80830AX
2.940
3.000
3.060
S-80831AX
3.038
3.100
3.162
S-80832AX
3.136
3.200
3.264
S-80833AX
3.234
3.300
3.366
S-80834AX
3.332
3.400
3.468
S-80835AX
3.430
3.500
3.570
S-80836AX
3.528
3.600
3.672
S-80837AX
3.626
3.700
3.774
S-80838AX
3.724
3.800
3.876
S-80839AX
3.822
-VDET
0.03
3.900
-VDET
0.05
3.978
-VDET
0.08
0.9
0.95
VHYS
ISS
VDD=4.5V
VDD
Output current
IOUT
ILEAK
Response time
tPLH
-VDET
Ta
2.7
10.0
VDD=1.2V
0.23
VDS=0.5V
VDD=2.4V
1.60
3.70
VDD=4.8V
0.36
0.62
0.1
60
0.96
mV/C
Pch(CMOS
VDS=0.5V
Nch(Nch
open drain)
Temperature
-VDET
Nch
Ta=-40C
to +85C
3
mA
VDS=10.0
V
VDD=10.0
V
0.32
S-80828AX
0.33
0.99
S-80829AX
0.34
1.02
S-80830AX
0.35
1.05
S-80831AX
0.36
1.08
S-80832AX
0.38
1.14
S-80833AX
0.39
1.17
S-80834AX
S-80827AX
characteristic of
0.50
output)
Leakage current of
output transistor

Test
Min.
Typ.
Max.
Unit
circuit
0.40
1.20
S-80835AX
0.41
1.23
S-80836AX
0.42
1.26
S-80837AX
0.44
1.32
S-80838AX
0.45
1.35
S-80839AX
0.46
1.38

S-808 Series
Parameter
Detection voltage
Hysteresis width
Current
consumption
Operating voltage
Output current
Symbol
-VDET
ISS
4.100
4.182
S-80842AX
4.116
4.200
4.284
S-80843AX
4.214
4.300
4.386
S-80844AX
4.312
4.400
4.488
S-80845AX
4.410
4.500
4.590
S-80846AX
4.508
4.600
4.692
S-80847AX
4.606
4.700
4.794
S-80848AX
4.704
4.800
4.896
S-80849AX
4.802
4.900
4.998
S-80850AX
4.900
5.000
5.100
S-80851AX
4.998
5.100
5.202
S-80852AX
5.096
5.200
5.304
S-80853AX
5.194
5.300
5.406
S-80854AX
5.292
5.400
5.508
S-80855AX
5.390
5.500
5.610
S-80856AX
5.488
-VDET
0.03
5.600
-VDET
0.05
5.712
-VDET
0.08
1.0
VDD=6.0V
IOUT
Response time
tPLH
-VDET
Ta
3.0
0.95
10.0
Nch
VDD=1.2V
0.23
0.50
VDS=0.5V
VDD=2.4V
1.60
3.70
Pch(CMOS
output)
VDS=0.5V
Nch(Nch
open drain)
Temperature
10
4.018
VDD
ILEAK
-VDET
S-80841AX
Min.
VHYS
Leakage current of
output transistor
characteristic of
S-80840AX

Test
Typ.
Max.
Unit
circuit
3.920
4.000
4.080
Conditions
Ta=-40C
to +85C
3
mA
VDD=6.0V
0.46
0.75
VDS=10.0
V
VDD=10.0
V
0.1
mV/C
60
S-80840AX
0.47
1.41
S-80841AX
0.48
1.44
S-80842AX
0.49
1.47
S-80843AX
0.51
1.53
S-80844AX
0.52
1.56
S-80845AX
0.53
1.59
S-80846AX
0.54
1.62
S-80847AX
0.55
1.65
S-80848AX
0.56
1.68
S-80849AX
0.58
1.74
S-80850AX
0.59
1.77
S-80851AX
0.60
1.80
S-80852AX
0.61
1.83
S-80853AX
0.62
1.86
S-80854AX
0.64
1.92
S-80855AX
0.65
1.95
S-80856AX
0.66
1.98

S-808 Series
Parameter
Symbol
Detection voltage
S-80858AX
5.684
5.800
5.916
S-80859AX
5.782
5.900
6.018
S-80860AX
5.880
-VDET
0.03
6.000
-VDET
0.05
6.120
-VDET
0.08
1.0
Conditions
-VDET
Hysteresis width
S-80857AX

Test
Min.
Typ.
Max.
Unit
circuit
5.586
5.700
5.814
VHYS
Current
consumption
Operating voltage
ISS
VDD=7.5V
VDD
Output current
IOUT
3.0
0.95
10.0
Nch
VDD=1.2V
0.23
0.50
VDS=0.5V
VDD=2.4V
1.60
3.70
Pch(CMOS
output)
mA
VDD=8.4V
0.59
0.96
VDS=10.0
V
VDD=10.0
V
0.1
60
mV/C
VDS=0.5V
Leakage current of
output transistor
ILEAK
Response time
tPLH
-VDET
Temperature
Ta
characteristic of
Nch(Nch
open drain)
Ta=-40C
to +85C
-VDET
S-80857AX
0.67
2.01
S-80858AX
0.68
2.04
S-80859AX
0.69
2.07
S-80860AX
0.71
2.13
n Test Circuits
(1)
(2)
A
VDD
VDD
R*
100k
VDD
S-808
OUT
S-808
VDD
Series
OUT
Series
V
VSS
VSS
* R is unnecessary for CMOS output products.
(3)
(4)
VDD
VDD
V
VDD
S-808
V
OUT
Series
VSS
VDD
VDS
S-808
V
Series
A
OUT
VSS
VDS
Figure 4
11

S-808 Series
n Technical Terms
1. Detection voltage (-VDET)
The detection voltage -VDET is the voltage at which the output switches to low. This detection voltage varies slightly among
products of the same type. The variation of voltages between the specified minimum [(-VDET)min.] and maximum [(VDET)max.] values is called the detection voltage range (See Figure 5).
Example :
For the S-80808AN, detection voltage lies in the range of 0.784 (-VDET) 0.816.
This means that -VDET is 0.784 in a product while -VDET is 0.816 in another of the same S-80808AN.
2. Release voltage (+VDET)

The release voltage +VDET is the voltage at which the output returns (is released) to high. This release voltage varies
slightly among products of the same type. The variation of voltages between the specified minimum [(+VDET)min.] and
maximum [(+VDET)max.] values is called the release voltage range (See Figure 6).
Example :
For the S-80808AN, the release voltage lies in the range of 0.802 (+VDET) 0.867. This means that
+VDET is 0.802 in a product while +VDET is 0.867 in another of the same S-80808AN.
Remark:
Although the detection voltage and release voltage overlap in the range of 0.802 V to 0.816 V, +VDET will
always be larger than -VDET.
VD
Detection voltage
(-VDET)Max.
Voltage range Detection
(-VDET)Min.
VD
Release voltage
(+VDET)Max.
Release voltage range
(+VDET)Min
OUT
OUT
Figure 5
Figure 6
3. Hysteresis width (VHYS)

The hysteresis width is the voltage difference between the detection voltage and the release voltage
(B-A=VHYS in Figure 10). By giving a device hysteresis, trouble such as noise at the input is avoided.
4. Through-type current
Through-type current refers to the current which flows instantaneously at the time of detection and release of a voltage
detector. Through-type current is large in CMOS output devices, and also flows to some extent in Nch open-drain output
devices.
12

S-808 Series
5. Oscillation
In applications where a resistor is connected to the voltage detector input (Figure 7), in the CMOS active low products for
example, the through-type current generated when the output goes from low to high (release) causes a voltage drop equal to
[through-type current][input resistance] across the resistor. When the resultant input voltage drops below the detection
voltage -VDET, the output voltage returns to its low level. In this state, the through-type current and its resultant voltage drop
have disappeared, and the output goes back from low to high. A through-type current is again generated, a voltage drop
appears, and the process repeats. This unstable condition is referred to as oscillation.
Misimplementation with input voltage divider
VDD
RA
(CMOS output products)

VIN
S-808XXAL
OUT
RB
VS
Figure 7
n Standard Circuit
R*
100k
VDD
OUT
VS
* R is unnecessary for* CMOS output

Figure 8
13

S-808 Series
n Operation
1. Basic operation : CMOS active low output
(1) When power supply voltage VDD is greater than the release voltage +VDET, the Nch transistor is OFF and the Pch
transistor ON, causing VDD (high) to appear at the output. With the Nch transistor N1 of Figure 9 OFF, the comparator
input voltage is (RB+RC)/(RA+RB+RC)VDD.
(2) When power supply voltage VDD goes below +VDET, the output maintains the power supply voltage level, as long as VDD
remains above the detection voltage -VDET. When VDD does fall below -VDET (A in Figure 10), the Nch transistor goes ON,
the Pch transistor goes OFF, and VSS appears at the output. With the Nch transistor N 1 of Figure 9 ON, the comparator
input voltage is RB/(RA+RB) VDD.
(3) When VDD falls below the minimum operating voltage, the output becomes undefined. However, output will revert to VDD
if a pull-up has been employed.
(4) VSS will again be output when VDD rises above the minimum operating voltage. VSS will continue to be output even when
VDD surpasses -VDET, as long as it does not exceed the release voltage +VDET.
(5) When VDD rises above +VDET (B in Figure 10), the Nch transistor goes OFF, the Pch transistor goes ON, and VDD
appears at the output.
VDD
(1)
RA
(2) (3) (4)
(5)
VD
B
Hysteresis
width (VHYS)
Detection voltage (-VDET)

Min. operating voltage
VSS
OUT
Pch
Release voltage (+VDET)
*
R
VREF
VD
Nch
OUT terminal output
RC
N1
VSS
* Parasitic diode
VS
Figure 10
Figure 9
14

S-808 Series
2. Other characteristics
(1)
Temperature characteristic of detection voltage

The temperature characteristics of the detection voltage are expressed by the oblique line parts in Figure 11.
S-80815AXNP:
-VDET
[V]
+0.54mV/C
-VDET25 is the detection voltage at 25C
-0.54mV/C
-40
25
85
Ta[C]
Figure 11
(2) Temperature characteristics of release voltage

+VDET
Ta
detection voltage as follows:
The temperature factor
+VDET
Ta
+VDET
=
of the release voltage is calculated by the temperature factor of the
-VDET
Ta
-VDET
The temperature factor of the release voltage has a same sign characteristics as the temperature factor
of the detection voltage.
(3) Temperature characteristics of hysteresis voltage
The temperature characteristics of hysteresis voltage
+VDET
Ta
+VDET
Ta
-VDET
-
Ta
VHY
=
-VDET
-VDET
Ta
is calculated as
-VDET
Ta
Remark: An example of temperature characteristics of (1) to (3) is shown on pages 16 and 17.
15

S-808 Series
n Characteristics (typical characteristics)
(1) Detection voltage (VDET) - Temperature (Ta)

(b) S-80814AL
(a) S-80808AL
0.9
1.6
0.88
1.55
0.86
1.5
0.84
+VDET
+VDET
VDET 1.45
(V)
VDET 0.82
(V)
0.8
1.4
-VDET
-VDET
0.78
1.35
0.76
0.74
-20 -10
10
20
30
40
1.3
-20
70
50 60
-10
10
Ta (C)
20
30
40
50 60
Ta (C)
(d) S-80860AL
(c) S-80815AL
6.25
1.60
6.20
+VDET
+VDET
1.55
6.15
VDET
(V)
VDET
(V)
1.50
6.10
-VDET
6.05
1.45
-40
-20
20
40
60
80
6.00
-VDET
Ta (C)
5.95
-40
-20
20
Ta (C)
16
40
60
80
70

S-808 Series
(2) Hysteresis voltage width (VHYS) - Temperature (Ta)
VHYS
(%)
(a) S-80815AL
(b) S-80860AL
VHYS 6
(%)
3
-40
-20
20
40
60
-40
80
-20
Ta (C)
20
40
60
80
Ta (C)
(3) Current consumption (ISS) - Input voltage (VDD)

(a) S-80808AL
(b) S-80814AL
Ta=25C
Ta=25C
20A
6A
4
Iss
(A)
Iss
(A) 3
1
0
0
0
2
VDD (V)
(c) S-80815AL
1.6
1.4
1.4
1.2
1.2
1.0
Iss
(A) 0.8
1.0
Iss
(A) 0.8
0.6
0.6
0.4
0.4
0.2
0.0
0.2
0.0
2
6
VDD (V)
10
12
15.2A
1.8
1.6
2
VDD (V)
(d) S-80860AL
Ta=25C
3.9A
1.8
6
VDD (V)
10
12
17

S-808 Series
(4) Current consumption (ISS) - Temperature (Ta)
(a) S-80808AL
(b) S-80814AL
VDD=1.5 V
VDD=2.0 V
4
Iss
(A) 3
Iss
(A)
1
0
0
-40
-20
20
40
60
-40
80
-20
20
Ta (C)
(c) S-80815AL
(d) S-80860AL
VDD=3.5 V
2.0
1.8
1.6
1.6
1.4
1.4
1.2
1.2
1.0
Iss
(A) 0.8
Iss
(A)
0.6
0.4
0.4
0.2
0.0
0.2
0.0
0
20
40
60
80
-40
Ta (C)
18
80
VDD=7.5 V
1.0
0.8
0.6
-20
60
Ta (C)
2.0
1.8
-40
40
-20
20
40
Ta (C)
60
80

S-808 Series
(5)
Nch transistor output current (IOUT) - VDS

(a) S-80814AL/AN
(b) S-80860AL/AN
Ta=25C
Ta=25C
60
2.5
50
IOUT
(mA)
VDD=1.3 V
VDD=6.0 V
40
1.5
IOUT
30
(mA)
VDD=4.8 V
20
VDD=1.0 V
0.5
VDD=3.6 V
10
VDD=2.4 V
VDD=0.7 V
VDD=1.2V
0
0
0.5
1.5
VDS (V)
VDS (V)
(6) Pch transistor output current (IOUT) - VDS

(a) S-80808AL
(b) S-80815AL
Ta=25C
30
25
4
VDD=2.9 V
IOUT
(mA)
VDD=8.4 V
20
VDD=7.2 V
IOUT
15
(mA)
VDD=2.4 V
VDD=6.0 V
2
10
VDD=4.8 V
VDD=1.9 V
VDD=1.4 V
VDD=3.6 V
VDD=2.4 V
VDD=0.9 V
0
0
0.5
1.5
2.5
VDS (V)
10
VDS (V)
(7) Nch transistor output current (IOUT) - Input voltage(VDD)

(a) S -80814AL/AN
(b) S-80860AL/AN
VDS =0.5V
VDS =0.5V
20
Ta=-40C
2.5
15
Ta=-30C
IOUT
(mA)
2
Ta=25C
IOUT
(mA)
1.5
Ta=-25C
10
Ta=85C
Ta=80C
1
5
0.5
0
0
0
0.5
1.5
VDD (V)
VDD (V)
19

S-808 Series
(8) Pch transistor output current(IOUT) - Input voltage(VDD)
(a) S-80814AL
(b) S-80815AL
VDS =0.5V
VDS =0.5V
5.0
Ta=-40C
2.5
IOUT
(mA)
Ta=25C
Ta=85C
4.0
IOUT
(mA) 3.0
2
1.5
Ta=-30C
2.0
Ta=25C
Ta=80C
1.0
0.5
0
0
1.5
2
VDD (V)
2.5
10
12
VDD (V)
(9) Minimum operating voltage

(a) S-80808AN
(b) S-80808AL
(PULL- UP VDD : 100K)
(PULL- UP 3.0 V : 100K)
1
0.8
VOUT
(mA)
0.6
Ta=-30C
VOUT
(mA) 2
Ta =25C
Ta=80C
0.4
Ta=-30C
Ta =25C
0.2
Ta=80C
0
0
0.2
0.8
0.6
0.4
VDD (V)
(c) S-80815AN
0.2
0.6
0.4
VDD (V)
0.75
2.0
0.70
Ta=-40C
0.65
1.5
Notice
VDDMIN 0.60
(V) 0.55
1.0
0.5
Ta =25C
Ta=85C
0.50
3.0
Ta=-40C
Ta =25C
6.0
0.5
1.0
1.5
12.0
VOUT
(V)
0.0
0.
9.0
PULL_UP (V)
Ta=80C
2.0
PULL_UP
VDD (V)
Remark:
VDDMIN is defined with VDD when VOUT goes
below 10% of the PULL UP voltage as shown
in Figure 12 when raising VDD from 0 V.
20
(d) S-80815AN
VOUT
(V)
0.8
PULL_UP0.1
VDDMIN
Figure 12
VDD (V)

S-808 Series
(10) Dynamic response
(a) S-80808AL
(b) S-80808AN
Ta=25C
Ta=25C
100
tPHL
10
0.1
Response
time (ms)
Response
time (ms) 1
tPHL
tPLH
0.01
tPLH
0.1
0.001
0.0001
0.001
0.1
0.01
0.01
0.0001
0.001
0.1
0.01
Load capacitance (F)
(c) S-80814AL
(d) S-80814AN
Ta=25C
Ta=25C
1
100
10
tPHL
tPHL
0.1
Response
time (ms) 1
Response
time (ms)
tPLH
0.01
tPLH
0.1
0.001
0.01
0.0001
0.001
0.1
0.01
0.0001
0.001
0.1
0.01
(e) S-80815AL
(f) S-80815AN
Ta=25C
10
0.1
1
Response
time (ms)
tPHL
Response
time (ms)
0.1
Ta=25C
tPHL
0.01
0.01
tPLH
tPLH
0.001
0.00001
0.0001
0.001
0.01
0.1
0.001
0.00001
0.001
0.01
0.1
Response
0.0001
21

S-808 Series
(g) S-80860AL
(h) S-80860AN
Ta=25C
Ta=25C
10
1
0.1
Response
time (ms)
0.1
tPHL
Response
time (ms)
tPHL
0.01
0.01
tPLH
0.001
0.00001
0.0001
0.001
0.01
0.1
tPLH
0.001
0.00001
0.0001
0.001
0.01
0.1
1sec
1sec
VIH
VDD
Input Voltage
S-808
VDD
VIL
tPLH
tPHL
VDD
R*
100k
OUT
Series
COUT
VDD90 %
VSS
Output Volatage
VDD10 %
* R is not needed for CMOS output products.

(a) - (d) : VIH=5.0V, VIL=0.7V
(e) - (h) : VIH=10V, VIL=0.95V
Figure 13
22
Figure 14

S-808 Series
n Application Circuit Examples
1. Microcomputer reset circuits
If the power supply voltage to a microcomputer falls below the specified level, an unspecified operation may be performed or
the contents of the memory register may be lost. When power supply voltage returns to normal, the microcomputer needs to
be initialized before normal operations can be done.
Reset circuits protect microcomputers in the event of current being momentarily switched off or lowered.
With the S-808 Series which has a low operating voltage, a high-precision detection voltage and hysteresis characteristic, the
reset circuits shown in Figures 15 to 16 can be easily constructed.
VDD1
VDD2
VDD
S808XXAL
S808XXAN
Microcomputer
Microcomputer
VS
VS
(Nch open-drain output products only)
Figure 15
Figure 16
2. Addition of power-on reset circuit

A power-on reset circuit can be constructed using Nch open-drain product of S-808 Series.
VDD
Di
R
S808XXAN
VIN
(R75k)
OUT
(Nch open-drain products)
C
VS
Note 1:
Note 2:
R should be 75 k or less for purpose of protection against oscillation.

Di instantaneously discharges the electric charge stored by C at the falling of the power.
Di is not necessary if delay in falling time is normal.
VDD
(V)
OUT
(V)
t(s)
t(s)
Figure 17
Note 3: When the power steeply rises, output may goes high for a instant due to the IC inconstant region
characteristics (output voltage is unstable in the region under minimum operating voltage) as shown in
Figure. 18.
VDD
(V)
OUT
(V)
t(s)
t(s)
Figure 18
23

S-808 Series
3. Change of detection voltage
In Nch open-drain output products of the S-808 Series, detection voltage can be changed using resistance dividers
or diodes as shown in Figures 19 and 20. In Figure 19, hysteresis width is also changed.
VDD
VDD
Vf1
RA
S808XXSN
VIN
(RA75k)
R
Vf2
VIN
OUT
S808XXSN
(Nch open-drain
products)
(Nch open-drain
products)
VS
OUT
VS
Detection voltage =
RA+RB
RB
-VDET
Hysteresis width =
RA+RB
RB
VHYS
Detection voltage =Vf1+Vf2+ (-VDET)

Figure 20
Note1: If RA and RB are large, the hysteresis width may be

larger than the value given by the formula above due
to through-type current (which flows slightly in Nch
open-drain circuit).
Note2: RA should be 75kor less for purpose of protection
against oscillation.
Figure 19
n Remarks
In CMOS output products of the S-808 Series, through-type current flows when the device is detecting or releasing. If a high
impedance is connected to the input, oscillation may be caused due to the fall of the voltage by the through-type current when
lowering the voltage during releasing.
When designing for mass production using an application circuit described herein, take the product deviation and temperature
characteristic into consideration.
Seiko Instruments Inc. shall not bear any responsibility for the patents on the circuits described herein.
24
TO-92
YF003-A 990531
Dimensions
(1)Loose
(2)Taped (reel/zigzag) Unit:mm
4.2max.
5.2max.
4.2max.
5.2max.
Marked side
Marked side
0.6max.
0.6max
.
0.45 0.1
0.45 0.1
0.45 0.1
0.45 0.1
2.5 -+0.4
0.1
1.27
1.27
Taping Specifications
1.0max.
12.71.0
Switch-back(wrap)
Specifications
1.0max.
Marked side
Side Spacer
24.7max
1#pin
0.5max.
165
3#pin
2.5min.
1.45max.
6.00.5
0.70.2
320
Spacer
4.00.2
6.350.4
60
12.70.3(20 pitches 254.01.0
320
40
Feed direction
Ftype
T type
Marked side
Feed direction
Feed direction
No. YF003 A C SD 1 0
Reel Specifications
Side Spacer(Place it in front)
1 reel holds 2000 ICs.
45
Leave enough space to

accommodate 4 components.
262
0.5
30 0.5
330
5 0.5
43 0.5
358 2
53 0.5
Feed derection
47
NP004-A 990531
SC-82AB
Unit:mm
Dimensions
1.30.2
0.15
1.25 2.10.3
0.05
0.16
0.90.1
1.1max
0.4
0.3
00.1
+0.1
1.5 -0.05
2.00.05
4.00.1
+0.1
-0.06
Reel Specifications
1.750.1
4.00.1
12.5max.
1.10.1
0.20.05
+0
180 -3
3.50.1
8.00.2
(2.0) 2.60.2
+1
60 -0
1.050.1
9.00.3
Winding core
210.5
130.2
T2 type
20.2
(60)
Feed direction
(60)
MP005-A 991105
SOT-23-5
Unit
Dimensions
mm
2.90.2
1.90.2
5
0.45
4
1.6
+0.2
2.8 -0.3
0.16
+0.1
-0.06
1.10.1
1.3max
0.95
0.1
0.40.1
Reel Specifications
4.00.1 (10 pitches 40.00.2)
1.5 +0.1
-0
2.00.05
0.270.05
3000 pcs./reel
12.5max.
3 max.
3 max.
1.0
+0.1
-0
4.00.1
1.40.2
3.250.15
9.00.3
210.5
130.2
20.2
(60)
Feed direction
(60)
UP003-A 990531
SOT-89-3
Unit:mm
Dimensions
4.50.1
1.50.1
1.60.2
1.50.1 1.50.1
45
0.40.1
0.40.1
0.450.1
1.5 +0.1
-0
Reel Specifications
4.00.1 10 pitches 40.00.2
2.00.05
16.5max
1.5+0.1
-0
8.00.1
5 max.
0.30.05
2.00.1
4.750.1
13.00.3
Winding core
Feed direction
(60)
(60)
808
Markings
TO-92
SC-82AB
SOT-89-3
SOT-23-5
1
1
990603
The information herein is subject to change without notice.

Seiko Instruments Inc. is not responsible for any problems caused by circuits or other diagrams
described herein whose industrial properties, patents or other rights belong to third parties. The
application circuit examples explain typical applications of the products, and do not guarantee any
mass-production design.
When the products described herein include Strategic Products (or Service) subject to regulations,
they should not be exported without authorization from the appropriate governmental authorities.
The products described herein cannot be used as part of any device or equipment which influences
the human body, such as physical exercise equipment, medical equipment, security system, gas
equipment, vehicle or airplane, without prior written permission of Seiko Instruments Inc.

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Rev. 2.

SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR

The S-808 Series is a high-precision voltage detector developed using

Ultra-low current consumption

1.3 A typ. (VDD=1.5 V)

Power failure detector

Products with detection voltage of 1.4 V or less

Constant voltage power monitor for cameras,

0.8A typ. (VDD=3.5 V)

video equipment, communication devices

High-precision detection voltage

Power monitor for microcomputers and reset

Super-small plastic package

Miniaturized power mold plastic package

Very-small plastic package

Seiko Instruments Inc.

SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR

(2) CMOS active low output

Seiko Instruments Inc.

SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR

Nch Open Drain(Low)

S-80832ANUP-EDW -T2 S-80832ANMP-EDW -T2

Seiko Instruments Inc.

SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR

Detection voltage range

CMOS Output Drain(Low)

S-80832ALUP-EAW -T2 S-80832ALMP-EAW -T2

Seiko Instruments Inc.

SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR

2. Output configurations and their implementation

Example with two power supplies

Examples with one power supply

Seiko Instruments Inc.

SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR

(Unless otherwise specified:

2. Products with detection voltage of 1.5 V or more

(Unless otherwise specified: Ta=25C)

Seiko Instruments Inc.

SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR

(Unless otherwise specified: Ta=25C)

Seiko Instruments Inc.

SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR

(Unless otherwise specified: Ta=25C)

Seiko Instruments Inc.

SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR

(Unless otherwise specified: Ta=25C)

Seiko Instruments Inc.

SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR

(Unless otherwise specified: Ta=25C)

Seiko Instruments Inc.

SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR

(Unless otherwise specified: Ta=25C)

* R is unnecessary for CMOS output products.

Seiko Instruments Inc.

SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR

2. Release voltage (+VDET)

Voltage range Detection

Release voltage range

3. Hysteresis width (VHYS)

Seiko Instruments Inc.