HEF4013BT

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HEF4013B

Dual D-type flip-flop


Rev. 9 — 10 December 2015 Product data sheet

1. General description
The HEF4013B is a dual D-type flip-flop that features independent set-direct input (SD),
clear-direct input (CD), clock input (CP) and outputs (Q, Q). Data is accepted when CP is
LOW and is transferred to the output on the positive-going edge of the clock. The active
HIGH asynchronous CD and SD inputs are independent and override the D or CP inputs.
The outputs are buffered for best system performance. The clock input’s Schmitt-trigger
action makes the circuit highly tolerant of slower clock rise and fall times.

It operates over a recommended VDD power supply range of 3 V to 15 V referenced to VSS


(usually ground). Unused inputs must be connected to VDD, VSS, or another input.

2. Features and benefits


 Tolerant of slow clock rise and fall times
 Fully static operation
 5 V, 10 V, and 15 V parametric ratings
 Standardized symmetrical output characteristics
 Specified from 40 C to +125 C
 Complies with JEDEC standard JESD 13-B

3. Applications
 Counters and dividers
 Registers
 Toggle flip-flops

4. Ordering information
Table 1. Ordering information
All types operate from 40 C to +125 C
Type number Package
Name Description Version
HEF4013BT SO14 plastic small outline package; 14 leads; body width 3.9 mm SOT108-1
HEF4013BTT TSSOP14 plastic thin shrink small outline package; 14 leads; body width 4.4 mm SOT402-1
NXP Semiconductors HEF4013B
Dual D-type flip-flop

5. Functional diagram


6'
6'
 
' ' 4 4

))
 
&3 &3 4 4
&'

&'

6'
6'
 
' ' 4 4

))
 
&3 &3 4 4
&'

&'
DDJ

Fig 1. Functional diagram

&3 &

& 4
& &

&
&
& &

'
4

& &

6'

&'

DDJ

Fig 2. Logic diagram (one flip-flop)

HEF4013B All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.

Product data sheet Rev. 9 — 10 December 2015 2 of 16


NXP Semiconductors HEF4013B
Dual D-type flip-flop

6. Pinning information

6.1 Pinning

4   9''

4   4

&3   4

&'  +()%  &3

'   &'

6'   '

966   6'

DDJ

Fig 3. Pin configuration

6.2 Pin description


Table 2. Pin description
Symbol Pin Description
1Q, 2Q 1, 13 true output
1Q, 2Q 2, 12 complement output
1CP, 2CP 3, 11 clock input (LOW to HIGH edge-triggered)
1CD, 2CD 4, 10 asynchronous clear-direct input (active HIGH)
1D, 2D 5, 9 data input
1SD, 2SD 6, 8 asynchronous set-direct input (active HIGH)
VSS 7 ground (0 V)
VDD 14 supply voltage

7. Functional description
Table 3. Function table[1]
Control Input Output
nSD nCD nCP nD nQ nQ
H L X X H L
L H X X L H
H H X X H H
L L  L L H
L L  H H L

[1] H = HIGH voltage level; L = LOW voltage level; X = don’t care; = LOW-to-HIGH clock transition.

HEF4013B All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.

Product data sheet Rev. 9 — 10 December 2015 3 of 16


NXP Semiconductors HEF4013B
Dual D-type flip-flop

8. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to VSS = 0 V (ground).
Symbol Parameter Conditions Min Max Unit
VDD supply voltage 0.5 +18 V
IIK input clamping current VI < 0.5 V or VI > VDD + 0.5 V - 10 mA
VI input voltage 0.5 VDD + 0.5 V
IOK output clamping current VO < 0.5 V or VO > VDD + 0.5 V - 10 mA
II/O input/output current - 10 mA
IDD supply current - 50 mA
Tstg storage temperature 65 +150 C
Tamb ambient temperature 40 +125 C
Ptot total power dissipation Tamb = 40 C to +125 C
SO14 [1] - 500 mW
TSSOP14 [2] - 500 mW
P power dissipation per output - 100 mW

[1] For SO14 packages: above Tamb = 70 C, Ptot derates linearly with 8 mW/K.
[2] For TSSOP14 packages: above Tamb = 60 C, Ptot derates linearly with 5.5 mW/K.

9. Recommended operating conditions


Table 5. Recommended operating conditions
Symbol Parameter Conditions Min Max Unit
VDD supply voltage 3 15 V
VI input voltage 0 VDD V
Tamb ambient temperature 40 +125 C
t/V input transition rise and fall rate VDD = 5 V - 3.75 s/V
VDD = 10 V - 0.5 s/V
VDD = 15 V - 0.08 s/V

HEF4013B All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.

Product data sheet Rev. 9 — 10 December 2015 4 of 16


NXP Semiconductors HEF4013B
Dual D-type flip-flop

10. Static characteristics


Table 6. Static characteristics
VSS = 0 V; VI = VSS or VDD; unless otherwise specified.
Symbol Parameter Conditions VDD Tamb = 40 C Tamb = +25 C Tamb = +85 C Tamb = +125 C Unit
Min Max Min Max Min Max Min Max
VIH HIGH-level IO < 1 A 5V 3.5 - 3.5 - 3.5 - 3.5 - V
input voltage 10 V 7.0 - 7.0 - 7.0 - 7.0 - V
15 V 11.0 - 11.0 - 11.0 - 11.0 - V
VIL LOW-level IO < 1 A 5V - 1.5 - 1.5 - 1.5 - 1.5 V
input voltage 10 V - 3.0 - 3.0 - 3.0 - 3.0 V
15 V - 4.0 - 4.0 - 4.0 - 4.0 V
VOH HIGH-level IO < 1 A 5V 4.95 - 4.95 - 4.95 - 4.95 - V
output voltage 10 V 9.95 - 9.95 - 9.95 - 9.95 - V
15 V 14.95 - 14.95 - 14.95 - 14.95 - V
VOL LOW-level IO < 1 A 5V - 0.05 - 0.05 - 0.05 - 0.05 V
output voltage 10 V - 0.05 - 0.05 - 0.05 - 0.05 V
15 V - 0.05 - 0.05 - 0.05 - 0.05 V
IOH HIGH-level VO = 2.5 V 5V - 1.7 - 1.4 - 1.1 - 1.1 mA
output current VO = 4.6 V 5V - 0.64 - 0.5 - 0.36 - 0.36 mA
VO = 9.5 V 10 V - 1.6 - 1.3 - 0.9 - 0.9 mA
VO = 13.5 V 15 V - 4.2 - 3.4 - 2.4 - 2.4 mA
IOL LOW-level VO = 0.4 V 5V 0.64 - 0.5 - 0.36 - 0.36 - mA
output current VO = 0.5 V 10 V 1.6 - 1.3 - 0.9 - 0.9 - mA
VO = 1.5 V 15 V 4.2 - 3.4 - 2.4 - 2.4 - mA
II input leakage 15 V - 0.1 - 0.1 - 1.0 - 1.0 A
current
IDD supply current all valid input 5V - 1.0 - 1.0 - 30 - 30 A
combinations; 10 V - 2.0 - 2.0 - 60 - 60 A
IO = 0 A
15 V - 4.0 - 4.0 - 120 - 120 A
CI input - - - - 7.5 - - - - pF
capacitance

HEF4013B All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.

Product data sheet Rev. 9 — 10 December 2015 5 of 16


NXP Semiconductors HEF4013B
Dual D-type flip-flop

11. Dynamic characteristics


Table 7. Dynamic characteristics
Tamb = 25 C; unless otherwise specified. For test circuit see Figure 6.
Symbol Parameter Conditions VDD Extrapolation formula Min Typ Max Unit
tPHL HIGH to LOW nCP to nQ, nQ; 5V [1] 83 + 0.55  CL - 110 220 ns
propagation delay see Figure 4 10 V 34 + 0.23  CL - 45 90 ns
15 V 22 + 0.16  CL - 30 60 ns
nSD to nQ 5V [1] 73 + 0.55  CL - 100 200 ns
10 V 29 + 0.23  CL - 40 80 ns
15 V 22 + 0.16  CL - 30 60 ns
nCD to nQ 5V [1] 73 + 0.55  CL - 100 200 ns
10 V 29 + 0.23  CL - 40 80 ns
15 V 22 + 0.16  CL - 30 60 ns
tPLH LOW to HIGH nCP to nQ, nQ; 5V [1] 68 + 0.55  CL - 95 190 ns
propagation delay see Figure 4 10 V 29 + 0.23  CL - 40 80 ns
15 V 22 + 0.16  CL - 30 60 ns
nSD to nQ 5V [1] 48 + 0.55  CL - 75 150 ns
10 V 24 + 0.23  CL - 35 70 ns
15 V 17 + 0.16  CL - 25 50 ns
nCD to nQ 5V [1] 33 + 0.55  CL - 60 120 ns
10 V 19 + 0.23  CL - 30 60 ns
15 V 12 + 0.16  CL - 20 40 ns
tt transition time see Figure 4 5V [1] 10 + 1.00  CL - 60 120 ns
10 V 9 + 0.42  CL - 30 60 ns
15 V 6 + 0.28  CL - 20 40 ns
tsu set-up time nD to nCP; 5V 40 20 - ns
see Figure 4 10 V 25 10 - ns
15 V 15 5 - ns
th hold time nD to nCP; 5V 20 0 - ns
see Figure 4 10 V 20 0 - ns
15 V 15 0 - ns
tW pulse width nCP input LOW; 5V 60 30 - ns
see Figure 4 10 V 30 15 - ns
15 V 20 10 - ns
nSD input HIGH; 5V 50 25 - ns
see Figure 5 10 V 24 12 - ns
15 V 20 10 - ns
nCD input HIGH; 5V 50 25 - ns
see Figure 5 10 V 24 12 - ns
15 V 20 10 - ns

HEF4013B All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.

Product data sheet Rev. 9 — 10 December 2015 6 of 16


NXP Semiconductors HEF4013B
Dual D-type flip-flop

Table 7. Dynamic characteristics …continued


Tamb = 25 C; unless otherwise specified. For test circuit see Figure 6.
Symbol Parameter Conditions VDD Extrapolation formula Min Typ Max Unit
trec recovery time nSD input; 5V +15 5 - ns
see Figure 5 10 V 15 0 - ns
15 V 15 0 - ns
nCD input; 5V 40 25 - ns
see Figure 5 10 V 25 10 - ns
15 V 25 10 - ns
fclk(max) maximum clock see Figure 4 5V 7 14 - MHz
frequency 10 V 14 28 - MHz
15 V 20 40 - MHz

[1] Typical values of the propagation delays and output transition times can be calculated with the extrapolation formulas. CL is given in pF.

Table 8. Dynamic power dissipation


VSS = 0 V; tr = tf  20 ns; Tamb = 25 C.
Symbol Parameter VDD Typical formula Where
PD dynamic power dissipation 5V PD = 850  fi + (fo  CL)  VDD W 2 fi = input frequency in MHz;
10 V PD = 3600  fi + (fo  CL)  VDD2 W fo = output frequency in MHz;
15 V PD = 9000  fi + (fo  CL)  VDD2 W CL = output load capacitance in pF;
(fo  CL) = sum of the outputs;
VDD = supply voltage in V.

HEF4013B All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.

Product data sheet Rev. 9 — 10 December 2015 7 of 16


NXP Semiconductors HEF4013B
Dual D-type flip-flop

12. Waveforms

IFON PD[  W:
9,

LQSXWQ&3 90

9
WVX WVX
WI WU
WK WK
9,

LQSXWQ' 90

9
W3/+ W3+/
WW WW
92+
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92/ 9;
DDK

Set-up and hold times are shown as positive values but may be specified as negative values.
The shaded areas indicate when the input is permitted to change for predictable output performance.
Logic levels: VOL and VOH are typical output voltage levels that occur with the output load.
Measurement points are given in Table 9.
Fig 4. Set-up time, hold time, minimum clock pulse width, propagation delays and transition times

9,
LQSXWQ&3 90
9
WUHF WUHF
9,
LQSXWQ6' 90
9 W:
9,
LQSXWQ&' 90
9 W:
92+
RXWSXWQ4
92/ DDJ

Recovery times are shown as positive values but may be specified as negative values.
Logic levels: VOL and VOH are typical output voltage levels that occur with the output load.
Measurement points are given in Table 9.
Fig 5. nSD, nCD recovery time and pulse width

Table 9. Measurement points


Supply voltage Input Output
VDD VM VM VX VY
5 V to 15 V 0.5VDD 0.5VDD 0.1VDD 0.9VDD
HEF4013B All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.

Product data sheet Rev. 9 — 10 December 2015 8 of 16


NXP Semiconductors HEF4013B
Dual D-type flip-flop

9''

9, 92
* '87

57 &/

DDJ

Test and measurement data is given in Table 10;


Definitions test circuit:
DUT = Device Under Test.
RT = Termination resistance should be equal to output impedance Zo of the pulse generator.
CL = Load capacitance including jig and probe capacitance.
Fig 6. Test circuit for measuring switching times

Table 10. Test data


Supply voltage Input Load
VDD VI tr, tf CL
5 V to 15 V VSS or VDD  20 ns 50 pF

HEF4013B All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.

Product data sheet Rev. 9 — 10 December 2015 9 of 16


NXP Semiconductors HEF4013B
Dual D-type flip-flop

13. Application information

' ' 4 ' 4 ' 4 4

)) )) ))


  Q

&3 4 &3 4 &3 4

FORFN DDJ

Fig 7. N-stage shift register

' 4 ' 4 ' 4 4

)) )) ))


  Q

FORFN &3 4 &3 4 &3 4

7W\SHIOLSIORS DDJ

Fig 8. Binary ripple up-counter; divide-by-2n

' 4 ' 4 ' 4 4

)) )) ))


  Q

&3 4 &3 4 &3 4

FORFN

DDJ

Fig 9. Modified ring counter; divide-by-(n + 1)

HEF4013B All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.

Product data sheet Rev. 9 — 10 December 2015 10 of 16


NXP Semiconductors HEF4013B
Dual D-type flip-flop

14. Package outline

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Fig 10. Package outline SOT108-1 (SO14)

HEF4013B All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.

Product data sheet Rev. 9 — 10 December 2015 11 of 16


NXP Semiconductors HEF4013B
Dual D-type flip-flop

76623SODVWLFWKLQVKULQNVPDOORXWOLQHSDFNDJHOHDGVERG\ZLGWKPP 627

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Fig 11. Package outline SOT402-1 (TSSOP14)

HEF4013B All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.

Product data sheet Rev. 9 — 10 December 2015 12 of 16


NXP Semiconductors HEF4013B
Dual D-type flip-flop

15. Abbreviations
Table 11. Abbreviations
Acronym Description
DUT Device Under Test

16. Revision history


Table 12. Revision history
Document ID Release date Data sheet status Change notice Supersedes
HEF4013B v.9 20151210 Product data sheet - HEF4013B v.8
Modifications: • Type number HEF4013BP (SOT27-1) removed.
HEF4013B v.8 20111121 Product data sheet - HEF4013B v.7
Modifications: • Legal pages updated.
• Changes in “General description”, “Features and benefits” and “Applications”.
HEF4013B v.7 20110913 Product data sheet - HEF4013B v.6
HEF4013B v.6 20091027 Product data sheet - HEF4013B v.5
HEF4013B v.5 20090619 Product data sheet - HEF4013B v.4
HEF4013B v.4 20080515 Product data sheet - HEF4013B_CNV v.3
HEF4013B_CNV v.3 19950101 Product specification - HEF4013B_CNV v.2
HEF4013B_CNV v.2 19950101 Product specification - -

HEF4013B All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.

Product data sheet Rev. 9 — 10 December 2015 13 of 16


NXP Semiconductors HEF4013B
Dual D-type flip-flop

17. Legal information

17.1 Data sheet status


Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.

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responsibility for the content in this document if provided by an information the Absolute Maximum Ratings System of IEC 60134) will cause permanent
source outside of NXP Semiconductors. damage to the device. Limiting values are stress ratings only and (proper)
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HEF4013B All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.

Product data sheet Rev. 9 — 10 December 2015 14 of 16


NXP Semiconductors HEF4013B
Dual D-type flip-flop

Export control — This document as well as the item(s) described herein NXP Semiconductors’ specifications such use shall be solely at customer’s
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Notice: All referenced brands, product names, service names and trademarks
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are the property of their respective owners.
whenever customer uses the product for automotive applications beyond

18. Contact information


For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]

HEF4013B All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.

Product data sheet Rev. 9 — 10 December 2015 15 of 16


NXP Semiconductors HEF4013B
Dual D-type flip-flop

19. Contents
1 General description . . . . . . . . . . . . . . . . . . . . . . 1
2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1
3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
4 Ordering information . . . . . . . . . . . . . . . . . . . . . 1
5 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2
6 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3
6.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
6.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3
7 Functional description . . . . . . . . . . . . . . . . . . . 3
8 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
9 Recommended operating conditions. . . . . . . . 4
10 Static characteristics. . . . . . . . . . . . . . . . . . . . . 5
11 Dynamic characteristics . . . . . . . . . . . . . . . . . . 6
12 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
13 Application information. . . . . . . . . . . . . . . . . . 10
14 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
15 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 13
16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13
17 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14
17.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14
17.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
17.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
17.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15
18 Contact information. . . . . . . . . . . . . . . . . . . . . 15
19 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP Semiconductors N.V. 2015. All rights reserved.


For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 10 December 2015
Document identifier: HEF4013B

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