Silan

Microelectronics SGT50T65FD1PN/P7/PS/PT_Datasheet

50A, 650V FIELD STOP IGBT

C
2
DESCRIPTION
1
G
SGT50T65FD1PN/P7/PS/PT using Field Stop IV IGBT technology, offers
the optimum performance for induction Heating, UPS, SMPS and PFC
3 1 2
application. E
3 TO-3P

FEATURES

 50A, 650V, VCE(sat)(typ.)=2.2V@IC=50A

1 2 TO-3PN
 Low conduction loss 3

 Fast switching
 High input impedance
12 1 2
3 3
TO-247-3L
TO-247S-3L

NOMENCLATURE

SGT 50 T 65 F D X 1 PN
IGBT series Package
PN: TO-3P
Current, 70: 70A

N: N Channel 1,2,3… : Version No.

NE: N-channel planar
gate with ESD Blank: Standard diode
T: Field Stop 3/4 M: Standard Diode, full range
U: Field Stop 4+ R: Rapid Diode
V: Field Stop 5 B: Rapid Diode, full range
W: Field Stop 6 S: Soft Diode, full range
X: Field Stop 7
D: Packaged with fast recovery diode
R: RC IGBT
Voltage, 65: 650V
120: 1200V
L: Ultra low switching，recommended frequency ~2KHz
Q: Low switching，recommended frequency2~20KHz
S: Standard frequency ，recommended frequency5~40KHz
F: Fast switching，recommended frequency10~60KHz
UF: Ultra fast switching，recommended frequency 40KHz~

ORDERING INFORMATION
Part No. Package Marking Hazardous Substance Control Packing Type
SGT50T65FD1PN TO-3P 50T65FD1 Pb free Tube
SGT50T65FD1P7 TO-247-3L 50T65FD1 Pb free Tube
SGT50T65FD1PS TO-247S-3L 50T65D1 Pb free Tube
SGT50T65FD1PT TO-3PN 50T65FD1 Pb free Tube

HANGZHOU SILAN MICROELECTRONICS CO.,LTD Rev.:1.9

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Microelectronics SGT50T65FD1PN/P7/PS/PT_Datasheet

ABSOLUTE MAXIMUM RATINGS (TC=25°C UNLESS OTHERWISE NOTED)

Parameter Symbol Ratings Units
Collector to Emitter Voltage VCE 650 V
Gate to Emitter Voltage VGE ±20 V
Transient G-E voltage VGEM ±30 V
TC=25C 100
Collector Current IC A
TC=100C 50
Pulsed Collector Current ICM 150 A
Diode Current IF 25 A
Power Dissipation (TC=25C) PD 235 W
Operating Junction Temperature Range TJ -55～+150 C
Storage Temperature Range Tstg -55～+150 C

THERMAL CHARACTERISTICS
Parameter Symbol Ratings Units
Thermal Resistance, Junction to Case (IGBT) RθJC 0.53 C/W
Thermal Resistance, Junction to Case (FRD) RθJC 1.48 C/W

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Microelectronics SGT50T65FD1PN/P7/PS/PT_Datasheet

ELECTRICAL CHARACTERISTICS OF IGBT (TC=25°C UNLESS OTHERWISE NOTED)

Parameter Symbol Test conditions Min. Typ. Max. Units
Collector to Emitter Breakdown Voltage BVCE VGE=0V, IC=250µA 650 -- -- V
C-E Leakage Current ICES VCE=650V, VGE=0V -- -- 200 µA
G-E Leakage Current IGES VGE=20V, VCE=0V -- -- ±400 nA
G-E Threshold Voltage VGE(th) IC=250µA, VCE=VGE 4.0 5.0 6.5 V
IC=50A, VGE=15V, TC=25C -- 2.2 2.6 V
Collector to Emitter Saturation Voltage VCE(sat)
IC=50A, VGE=15V, TC=125C -- 2.4 -- V
Input Capacitance Cies -- 4532 --
Output Capacitance Coes VCE=30V, VGE=0V, f=1MHz -- 90 -- pF
Reverse Transfer Capacitance Cres -- 41 --
Turn-On Delay Time Td(on) -- 45 --
Rise Time Tr VCE=400V -- 145 --
ns
Turn-Off Delay Time Td(off) IC=50A -- 125 --
Fall Time Tf Rg=10Ω -- 130 --
Turn-On Switching Loss Eon VGE=15V -- 2.8 --
Turn-Off Switching Loss Eoff Inductive Load -- 1.0 -- mJ
Total Switching Loss Est -- 3.8 --
Total Gate Charge Qg -- 145 --
Gate to Emitter Charge Qge VCE=400V, IC=50A, VGE=15V -- 48 -- nC
Gate to Collector Charge Qgc -- 46 --

ELECTRICAL CHARACTERISTICS OF FRD (TC=25°C UNLESS OTHERWISE NOTED)

Parameter Symbol Test conditions Min. Typ. Max. Units
IF=25A, TC=25C -- 1.95 --
Diode Forward Voltage VFM V
IF=25A, TC=125C -- 1.7 --
Diode Reverse Recovery Time Trr IEC=25A, dIEC/dt=200A/μs -- 33 -- ns
Diode Reverse Recovery Charge Qrr IEC=25A, dIEC/dt=200A/μs -- 65 -- nC

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 Silan
Microelectronics SGT50T65FD1PN/P7/PS/PT_Datasheet
TYPICAL CHARACTERISTIC CURVES

Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics

100 100
Emitter in common VGE=9V Emitter in common VGE=9V
TC=25°C VGE=11V TC=125°C VGE=11V
VGE=13V VGE=13V
Collector Current – IC(A)

Collector Current – IC(A)

80 80 VGE=15V
VGE=15V
VGE=17V VGE=17V

60 60

40 40

20 20

0 0
0 1.5 3.0 4.5 6.0 0 1.5 3.0 4.5 6.0
Collector-Emitter Voltage – VCE(V) Collector-Emitter Voltage – VCE(V)

Figure 3. Typical Saturation Voltage Characteristics Figure 4. Transmission Characteristics

100 50
Emitter in common
Emitter in common VGE=10V
Collector Current – IC(A)

Collector Current – IC(A)

80 VGE=15V 40

TC=25°C TC=125°C
60 30
TC=125°C

40 20 TC=25°C

20 10

0 0
0 1 2 3 4 5 6 0 5 10 15
Collector-Emitter Voltage – VCE(V) Gate-Emitter Voltage– VGE(V)

Figure 5. Saturation Voltage vs. VGE Figure 6. Saturation Voltage vs. VGE
15 15
Collector-Emitter Voltage– VCE(V)

Emitter in common Emitter in common

Collector-Emitter Voltage– VCE(V)

TC=25°C TC=125°C

10 10
50A 100A 50A 100A

IC=25A IC=25A

5 5

0 0
4 8 12 16 20 4 8 12 16 20
Gate-Emitter Voltage– VGE(V) Gate-Emitter Voltage– VGE(V)

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Microelectronics SGT50T65FD1PN/P7/PS/PT_Datasheet
TYPICAL CHARACTERISTIC CURVES (CONTINUED)

Figure 7. Saturation voltage vs. temperature Figure 8. Capacitance Characteristics

4.0 6000
VCE(V)Collector-Emitter Voltage - VGE(V)

Emitter in common
Emitter in common
VGE=0V
VGE=15V
3.5 IC=100A 5000 f=1MHz
Cies TC=25°C

Capacitance (pF)
3.0 4000

2.5 IC=50A 3000

2.0 IC=25A 2000

1.5 1000
Coes
Cres
1.0 0
25 50 75 100 125 1 10 100
Case temperature – TC(°C) Collector-Emitter Voltage – VCE(V)

Figure 9. Gate Charge Characteristics Figure 10. Turn-on Characteristics vs. Gate Resistance
15 1000
Emitter in common
Emitter in common VCC=400V, VGE=15V,
Gate-Emitter Voltage - VGE(V)

TC=25°C IC=50A, TC=25°C

12
Switching Time (nS)

tr
9
100
6 td(on)

3
VCC=100V
VCC=200V
VCC=300V
0 10
0 50 100 150 0 10 20 30 40 50
Gate Charge – Qg(nC) Gate Resistance - Rg(Ω)

Figure 11. Turn-off Characteristics vs. Gate Resistance Figure 12. Switching loss vs. Gate Resistance
10000 10000
Emitter in common Emitter in common
VCC=400V, VGE=15V, VCC=400V, VGE=15V
IC=50A, TC=25°C IC=50A, TC=25°C
Switching Time(nS)

Switching Loss (mJ)

1000 Eon
td(off)

tf

100
Eoff

10 1000
0 10 20 30 40 50 0 10 20 30 40 50
Gate Resistance - Rg(Ω) Gate Resistance - Rg(Ω)

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Microelectronics SGT50T65FD1PN/P7/PS/PT_Datasheet
TYPICAL CHARACTERISTIC CURVES (CONTINUED)

Figure 13. Turn-on Characteristics vs. Collector Current Figure 14. Turn-off Characteristics vs. Collector Current
1000 1000
Emitter in common Emitter in common
VCC=400V, VGE=15V, VCC=400V, VGE=15V,
RG=10Ω, TC=25°C tr RG=10Ω, TC=25°C

Switching time (ns)

Switching time (ns)

100 td(off)

td(on)
100
tf
10

1 10
0 20 40 60 80 0 20 40 60 80
Collector Current - IC(A) Collector Current - IC(A)

Figure 15. Switching loss vs. collector current Figure 16. Forward Characteristics
10000 100
Emitter in common
VCC=400V, VGE=15V,
RG=10Ω, TC=25°C
Forward Current-IFM(A)
Switching loss (µJ)

Eon
TC=125°C
TC=25°C
1000 10

Eoff

100 1
0 20 40 60 80 0 0.5 1.0 1.5 2.0 2.5 3.0
Collector current - IC(A) Forward Voltage-VFM(V)

Figure 17. Reverse Recovery Time vs. Forward Current Figure 18. Reverse Recovery Charge vs. Forward Current
40 70
Reverse Recovery Charge- Qrr(nc)
Reverse Recovery Time- Trr(ns)

di/dt=100A/µs 60
di/dt=200A/µs
35
50

di/dt=200A/µs 40
30
di/dt=100A/µs

30

25 20
0 20 40 60 0 20 40 60
Forward Current - IF(A) Forward Current - IF(A)

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Microelectronics SGT50T65FD1PN/P7/PS/PT_Datasheet
TYPICAL CHARACTERISTIC CURVES (CONTINUED)

Figure 19. Maximum Safety Operating Area

102
Collector Current - ID(A)

100µs
101
1ms
10ms
DC

100

Max. junction temperature: 150°C

Max. reference temperature: 25°C

10-1
100 101 102 103
Collector-emitter voltage – VCE(V)

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 Silan
Microelectronics SGT50T65FD1PN/P7/PS/PT_Datasheet
PACKAGE OUTLINE

TO-3P UNIT: mm

D A
MILLIMETER
SYMBOL
F2 c1 MIN NOM MAX
__
A 4.4 5.2
__
c1 1.2 1.8
__
A1 1.2 2.0
b 0.7 1.0 1.3
L2

φP
L1

b1 2.7 3.0 3.3

b2 1.7 2.0 2.3
D 15.0 15.5 16.0
L

c 0.4 0.6 0.8

A1 __
b1 F2 8.5 10.0
b2 b e 5.45 TYP
__
L1 22.6 23.6
L 39.0 __ 41.5
__
L2 19.5 21.0
__
P 3.0 3.4
e c

TO-247-3L UNIT: mm

E A
A2 MILLIMETER
Q

SYMBOL
φP MIN NOM MAX
A 4.80 5.00 5.20
E2

A1 2.21 2.41 2.59

A2 1.85 2.00 2.15
D

b 1.11 _ 1.36
_
b2 1.91 2.25
_
b4 2.91 3.25
_
c 0.51 0.75
L1

D 20.80 21.00 21.30

E 15.50 15.80 16.10

E2 4.40 5.00 5.20
L

e 5.44 BSC

L 19.72 19.92 20.22

_ _
L1 4.30

b2 C Q 5.60 5.80 6.00

b A1
b4 P 3.40 — 3.80
e

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Microelectronics SGT50T65FD1PN/P7/PS/PT_Datasheet
PACKAGE OUTLINE(CONTINUED)

TO-247S-3L UNIT: mm

A
MILLIMETER
E SYMBOL
MIN NOM MAX
A 4.80 5.00 5.20

D3
ØP
A1 2.30 2.50 2.70

C3
C2
b 1.10 1.20 1.30
b1 2.90 3.10 3.30
D
b2 1.90 2.10 2.30
c2 5.50 6.00 6.50
c3 4.95 5.10 5.25
D 19.00 20.00 21.00
b2 D3 5.30 5.50 5.70
L2

A1

e 5.34 5.44 5.54

b1
E 15.40 15.60 15.80
L1

b L1 14.40 14.60 14.80

L3
L2 3.85 4.00 4.15
L3 0.35 0.50 0.65
e e
ØP 3.40 3.60 3.80

TO-3PN UNIT: mm

B
A
B1
A1 MILLIMETER
SYMBOL
MIN NOM MAX
A 4.60 4.80 5.00
ΦP A1 1.30 1.50 1.70
A2 2.20 2.40 2.60
D

b 0.80 1.00 1.20

b1 1.80 2.00 2.20
b2 2.90 3.10 3.30
G

B 15.20 15.60 16.00

A2
b1
b2
B1 9.10 9.30 9.50
c 0.50 0.60 0.70
D1

D 18.30 18.50 18.70

b D1 19.00 19.50 20.00

c
e 5.25 5.45 5.65
e
G 2.80 3.00 3.20
P 3.00 3.20 3.40
4.6～5.0

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Microelectronics SGT50T65FD1PN/P7/PS/PT_Datasheet
Important notice :
1. The instructions are subject to change without notice！
2. Customers should obtain the latest relevant information before placing orders and should verify that such information is
complete and current. Please read the instructions carefully before using our products, including the circuit operation
precautions.
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4. When using our products, please do not exceed the maximum rating of the products, otherwise the reliability of the whole
machine will be affected. There is a certain possibility of failure or malfunction of any semiconductor product under specific
conditions. The buyer is responsible for complying with safety standards and taking safety measures when using our products
for system design, sample and whole machine manufacturing, so as to avoid potential failure risk that may cause personal
injury or property loss.
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Microelectronics SGT50T65FD1PN/P7/PS/PT_Datasheet
Part No.: SGT50T65FD1PN/P7/PS/PT Document Type: Datasheet
Copyright: HANGZHOU SILAN MICROELECTRONICS CO.,LTD Website: http: //www.silan.com.cn

Rev.: 1.9
Revision History:
1. Modify electrical characteristics
Rev.: 1.8
Revision History:
1. Add TO-3PN
2. Update important notice
Rev.: 1.7
Revision History:
1. Update characteristics
2. Update the package outline
Rev.: 1.6
Revision History:
1. Add package outline of TO-247S-3L
2. Modify NOMENCLATURE
Rev.: 1.5
Revision History:
1. Update Electrical characteristics
Rev.: 1.4
Revision History:
1. Add Max. value of Vcesat
Rev.: 1.3
Revision History:
1. Modify TO-247-3L
Rev.: 1.2
Revision History:
1. Add TO-247-3L
2. Modify Diode Current to 25A
Rev.: 1.1
Revision History:
1. Add TransientUpdate the package outline
Rev.: 1.0
Revision History:
1. First release

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