2 SB 834

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UNISONIC TECHNOLOGIES CO.

, LTD
2SB834 PNP SILICON TRANSISTOR

HIGH VOLTAGE TRANSISTOR

 DESCRIPTION
Low frequency power amplifier applications.

 ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Lead Free Halogen Free 1 2 3
2SB834L-x-AB3-R 2SB834G-x-AB3-R SOT-89 B C E Tape Reel
2SB834L-x-T60-K 2SB834G-x-T60-K TO-126 E C B Bulk
2SB834L-x-TA3-T 2SB834G-x-TA3-T TO-220 B C E Tube
2SB834L-x-TF3-T 2SB834G-x-TF3-T TO-220F B C E Tube
2SB834L-x-TN3-R 2SB834G-x-TN3-R TO-252 B C E Tape Reel
Note: Pin Assignment: B: Base C: Collector E: Emitter

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Copyright © 2014 Unisonic Technologies Co., Ltd QW-R204-018.F
2SB834 PNP SILICON TRANSISTOR

 MARKING INFORMATION
PACKAGE MARKING

SOT-89

TO-220
TO-220F
TO-252

TO-126

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2SB834 PNP SILICON TRANSISTOR

 ABSOLUTE MAXIMUM RATINGS (Operating temperature range applies unless otherwise specified )
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO -60 V
Collector-Emitter Voltage VCEO -60 V
Emitter-Base Voltage VEBO -7 V
Collector Current IC -3 A
Base Current IB -0.5 A
SOT-89 3 W
TO-220 30 W
Power Dissipation (TC=25°C) PD
TO-252 26 W
TO-126/TO-220F 25 W
Junction Temperature TJ +125 °C
Storage Temperature TSTG -40 ~ +150 °C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Emitter Breakdown Voltage BVCEO IC=-50mA -60 V
Collector Cut-Off Current ICBO VCB=-60V -100 μA
Emitter Cut-Off Current IEBO VEB=-7V -100 μA
Collector-Emitter Saturation Voltage VCE(SAT) IC=-3A, IB=0.3A -1 V
Base-Emitter On Voltage VBE(ON) VCE=-5V, IC=-0.5A -0.7 -1 V
hFE1 IC=-0.5A, VCE=-5V 60 300
DC Current Gain
hFE2 IC=-3A, VCE=-5V 20
Current Gain Bandwidth Product fT VCE=-5V, IC=-0.5A 9 MHZ

 CLASSIFICATION of hFE1
RANK O Y GR
RANGE 60-120 100-200 150-300

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2SB834 PNP SILICON TRANSISTOR

 TYPICAL CHARACTERISTICS

Collector Current vs.


Power Derating
Collector-Emitter Voltage
40 -3.0
-70 -80 -60
35 -50
-40
Power Dissipation, PD (W)

Collector Current, IC (A)


30
-30
-2.0
25
-20
20 TO-220

15 IB = -10mA
-1.0
TO-126/TO-220F
10

5 SOT-89
TC=25°C
0
75 125 150 0 -1.0 -2.0 -3.0 -4.0 -5.0 -6.0
0 25 50 100
Temperature, TC (°C) Collector-Emitter Voltage, VCE (V)

DC Current Gain Collector Current vs.


Base-Emitter Voltage
-3.0
TC=100°C VCE = 5.0V VCE = 5.0V
300
TC=25°C
Collector Current, IC (A)
DC Current Cain, hFE

TC=-25°C
-2.0
100 TC=100°C
25°C
-25°C
50
-1.0
30

10
-2 -5 -10 -20 -50 -100 -200 -500 -1k -3k 0 -0.4 -0.8 -1.2 -1.6
Collector Current, IC (mA) Base-Emitter Voltage, VBE (V)

Collector-Emitter Saturation Voltage Active-Region Safe Operating AREA


vs. Collector Current (SOA)
-1.0 -10
Common Emitter 100ms 10ms
Collector-Emitter Saturation Voltage,

-0.4 IC/IB = 10
-5.0 1ms
Collector Current, IC (A)

-2.0 DC
VCE(SAT) (V)

-0.2
-1.0
-0.1
TC=100°C -0.5
25°C Bonding Wire Limit
-0.05
-25°C Second Breakdown Limit
-0.2 Thermally Limited
at TC=25°C(Single Pulse)
-0.02 -0.1
-2 -5 -10 -20 -50-100-200 -500 -1k -2k -3k -1.0 -2.0 -5.0-7.0-10 -20 -50-70-100
Collector Current, IC (mA) Collector Emitter Voltage, VCE (V)

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2SB834 PNP SILICON TRANSISTOR

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.

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