Si 8 XX

Si86S63x/64x/S4x/Q4x/66x: Multi-Channel
Digital Isolators
Robust, High Speed Low Power Multi-Channel Digital Isolators

KEY FEATURES
Skyworks' new family of robust, low-power digital isolators are CMOS devices offering
substantial data rate, propagation delay, power, size, reliability, and external BOM ad- • High-speed operation: DC to 150 Mbps
vantages over legacy isolation technologies. All device versions have CMOS thresholds • No start-up initialization required
and Schmitt trigger inputs for high noise immunity and only require VDD bypass capaci- • Wide Supply Voltage: 2.25 – 5.5 V
tors. Data rates up to 150 Mbps are supported, and all devices achieve typical propaga-
• Up to 6000 VRMS isolation
tion delays of 10 ns. This family includes SPI capable product options and options that
support QSPI with a direction control pin. Enable inputs provide a single point control for • Reinforced IEC 60747-17 rating
enabling and disabling outputs. A new sleep mode is included that helps conserve pow- • High electromagnetic immunity
er by shutting down active circuits when enabled. Low-power mode operation options • Low power and sleep mode options
are also included that are optimized for saving power. Other ordering options include • Tri-state outputs with enable
a choice of isolation ratings (3.75 and 6.0 kVRMS) and product options for fail-safe
• Schmitt trigger + CMOS threshold inputs
operating mode to control the default output state during power loss. All products are
• Selectable fail-safe mode
safety certified by UL, CSA, VDE, and CQC. Products in wide-body packages support
• Default high or low output (ordering
voltages of 6.0 kVRMS with 1 minute withstand capability per UL 1577. These products option)
are certified to the latest IEC 60747-17 reinforced specification and can be safely used
• Precise timing (typical)
in high power applications like inverters and motor drives. • 10 ns propagation delay
Industrial Application Safety Regulatory Approvals (Pending) • 3.5 ns pulse width distortion
• Industrial automation systems • UL 1577 recognized • Transient Immunity of 100 kV/µs (min)
• Medical electronics • Up to 6000 VRMS for 1 minute • AEC-Q100 qualification
• Isolated switch mode supplies • Wide temperature range

• CSA certification conformity
• –40 to 125 °C
• Isolated ADC, DAC • IEC 62368-1 (reinforced insulation)
• RoHS-compliant packages
• Motor control • VDE certification conformity • WB SOIC-16
• Power inverters • IEC 60747-17 (reinforced) • NB SOIC-16
• Communications systems • EN 62368-1 (reinforced insulation) • QSOP-16
• CQC certification approval
• GB4943.1-2011
Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • [email protected] • www.skyworksinc.com
1 Rev. 0.2 • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice • December 17, 2021 1
Downloaded from Arrow.com.
Table of Contents
1. Ordering Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2. Functional Description. . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.1 Theory of Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3. Device Operation and System Overview . . . . . . . . . . . . . . . . . . . . . 8

3.1 Device Startup, UVLO, and Reset Functionality . . . . . . . . . . . . . . . . . . .10
3.2 Layout Considerations . . . . . . . . . . . . . . . . . . . . . . . . . . .11
3.2.1 Supply Bypass . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
3.2.2 Output Pin Termination . . . . . . . . . . . . . . . . . . . . . . . . . .11
3.3 Fail-Safe Operating Mode . . . . . . . . . . . . . . . . . . . . . . . . . .11
3.4 Device Features and System Overview. . . . . . . . . . . . . . . . . . . . . .12
3.4.1 Low Power Mode Operation . . . . . . . . . . . . . . . . . . . . . . . .12
3.4.2 Sleep Mode Operation . . . . . . . . . . . . . . . . . . . . . . . . . .12
3.4.3 SPI Operation for Si86SSx . . . . . . . . . . . . . . . . . . . . . . . .13
3.4.4 Custom QSPI Implementation Mode . . . . . . . . . . . . . . . . . . . . .14
3.4.5 Input Noise Filters with Deglitch Times of 30 ns . . . . . . . . . . . . . . . . .15
4. Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . 16
5. Pin Descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
6. Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
6.1 Package Outline (WB SOIC-16) . . . . . . . . . . . . . . . . . . . . . . . .58
6.2 Package Outline (NB SOIC-16) . . . . . . . . . . . . . . . . . . . . . . . .60
6.3 Package Outline (QSOP-16) . . . . . . . . . . . . . . . . . . . . . . . . .62
7. Land Pattern . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64
7.1 Land Pattern (WB SOIC-16) . . . . . . . . . . . . . . . . . . . . . . . . .64
7.2 Land Pattern (NB SOIC-16) . . . . . . . . . . . . . . . . . . . . . . . . .65
7.3 Land Pattern (QSOP-16) . . . . . . . . . . . . . . . . . . . . . . . . . .66
8. Top Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67
8.1 Top Marking (WB SOIC-16). . . . . . . . . . . . . . . . . . . . . . . . . .67
8.2 Top Marking (NB SOIC-16) . . . . . . . . . . . . . . . . . . . . . . . . . .69
8.3 Top Marking (QSOP-16) . . . . . . . . . . . . . . . . . . . . . . . . . . .70
9. Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71
Si86S63x/64x/S4x/Q4x/66x: Multi-Channel Digital Isolators • Ordering Guide
1. Ordering Guide
Table 1.1. Ordering Guide for 3-Channel Digital Isolators1, 2, 3
Number of Number of Deglitch Default Isolation

Ordering Part Number
Inputs Inputs Filter Output Rating Temp (°C) Package
(OPN)
VDD1 Side VDD2 Side Delay (ns) State (kV)
Si86S630BC-IS1 3 0 0 Low 3.75 –40 to 125 °C NB SOIC-16
Si86S630BE-IS2 3 0 0 Low 6.0 –40 to 125 °C WB SOIC-16
Si86S630EC-IS1 3 0 0 High 3.75 –40 to 125 °C NB SOIC-16
Si86S630EE-IS2 3 0 0 High 6.0 –40 to 125 °C WB SOIC-16
Note:
1. All packages are RoHS-compliant with peak reflow temperatures of 260 °C according to the JEDEC industry standard classifica-
tions and peak solder temperatures.
2. “Si” and “SI” are used interchangeably.
3. An "R" at the end of the part number denotes tape and reel packaging option.

(OPN)
Si86S640BB-IU 4 0 0 Low 2.5 –40 to 125 °C QSOP-16
Si86S640EB-IU 4 0 0 High 2.5 –40 to 125 °C QSOP-16

(OPN)
Si86S640FC-IS1 4 0 30 Low 3.75 –40 to 125 °C NB SOIC-16
Si86S640FE-IS2 4 0 30 Low 6.0 –40 to 125 °C WB SOIC-16
Si86S640HC-IS1 4 0 30 High 3.75 –40 to 125 °C NB SOIC-16
Si86S640HE-IS2 4 0 30 High 6.0 –40 to 125 °C WB SOIC-16
Low Power Mode
Si86SL40BC-IS1 4 0 0 Low 3.75 –40 to 125 °C NB SOIC-16
Si86SL40BE-IS2 4 0 0 Low 6.0 –40 to 125 °C WB SOIC-16
Si86SL40EC-IS1 4 0 0 High 3.75 –40 to 125 °C NB SOIC-16
Si86SL40EE-IS2 4 0 0 High 6.0 –40 to 125 °C WB SOIC-16
Sleep Mode
Si86SM40BC-IS1 4 0 0 Low 3.75 –40 to 125 °C NB SOIC-16
Si86SM40BE-IS2 4 0 0 Low 6.0 –40 to 125 °C WB SOIC-16
Si86SM40EC-IS1 4 0 0 High 3.75 –40 to 125 °C NB SOIC-16
Si86SM40EE-IS2 4 0 0 High 6.0 –40 to 125 °C WB SOIC-16

(OPN)
SPI Mode
Si86SS41BC-IS1 3 1 0 Low 3.75 –40 to 125 °C NB SOIC-16
Si86SS41BE-IS2 3 1 0 Low 6.0 –40 to 125 °C WB SOIC-16
Si86SS41EC-IS1 3 1 0 High 3.75 –40 to 125 °C NB SOIC-16
Si86SS41EE-IS2 3 1 0 High 6.0 –40 to 125 °C WB SOIC-16
Custom QSPI Implementation Mode
Si86SQ44BB-IU 4 0 0 Low 2.5 –40 to 125 °C QSOP-16
Si86SQ44BE-IS2 4 0 0 Low 6.0 –40 to 125 °C WB SOIC-16
Si86SQ44EB-IU 4 0 0 High 2.5 –40 to 125 °C QSOP-16
Si86SQ44EE-IS2 4 0 0 High 6.0 –40 to 125 °C WB SOIC-16
Note:

(OPN)
Si86S661BE-IS2 5 1 0 Low 6 –40 to 125 °C WB SOIC-16
Si86S661EE-IS2 5 1 0 High 6 –40 to 125 °C WB SOIC-16
Si86S662BE-IS2 4 2 0 Low 6 –40 to 125 °C WB SOIC-16
Si86S662EE-IS2 4 2 0 High 6 –40 to 125 °C WB SOIC-16
Note:
Si86S63x/64x/S4x/Q4x/66x: Multi-Channel Digital Isolators • Functional Description
2. Functional Description
2.1 Theory of Operation
The operation of an Si86Sx channel is analogous to that of an opto coupler, except an RF carrier is modulated instead of light. This
simple architecture provides a robust isolated data path and requires no special considerations or initialization at start-up. A simplified
block diagram for a single Si86Sx channel is shown in the figure below.
Figure 2.1. Simplified Channel Diagram
A channel consists of an RF Transmitter and RF Receiver separated by a semiconductor-based isolation barrier. Referring to the
transmitter, input A modulates the carrier provided by an RF oscillator using on/off keying. The Receiver contains a demodulator that
decodes the input state according to its RF energy content and applies the result to output B via the output driver. This RF on/off keying
scheme is superior to pulse code schemes as it provides best-in-class noise immunity, low power consumption, and improved immunity
to magnetic fields. See the following figure for more details.
Figure 2.2. Modulation Scheme
Si86S63x/64x/S4x/Q4x/66x: Multi-Channel Digital Isolators • Device Operation and System Overview
3. Device Operation and System Overview
Device behavior during start-up, normal operation, and shutdown is shown in Figure 3.1 Device Behavior during Startup on page 10,
where UVLO+ and UVLO– are the respective positive-going and negative-going thresholds. Refer to the following tables to determine
outputs when power supply (VDD) is not present and for logic conditions when enable pins are used.
Table 3.1. Si86S6x/Lx/Mx Logic Operation
VDDI VDDO
VI Input1, 2 EN/SMB3 VO Output1, 2 Comments
State1, 4, 5, 6 State1, 4, 5, 6
H H or open P P H
L H or open P P L Normal operation
X L P P Hi-Z
L6 Default low options

X X UP P
H6 Default high options
Upon transition of VDDO from un-

X X P UP UD7 powered to powered, VO returns to
correct state.7
Note:
1. VI and VO are the input and output terminals of any one channel. VDDI and VDDO are the power supplies on the input and
output sides respectively.
2. X = Not Applicable; H = Logic High; L = Logic Low; Hi-Z = High Impedance; UD = Undetermined
3. EN1/EN2 enable pins control the state of all outputs on the same side as the pin as stated in table above. For options with sleep
mode 1, EN1/EN2 enable pins also turn off circuits on that side, allowing for a low power mode. The SMB pin controls the state
of all outputs on the device, including ones on the isolated side, as well as allowing the device to be in low power mode as
described in Features Description Section 3.4 Device Features and System Overview.
4. “Powered” state (P) is defined as 2.25 V < VDD < 5.5 V.
5. “Unpowered” state (UP) is defined as VDD <2.25V.
6. Note that an I/O can power the die for a given side through an internal diode if its source has adequate current.
7. UD =Undetermined. Refer to Figure 3.1 Device Behavior during Startup on page 10, the start-up time from unpowered state,
below 1.7 V (RSTB) threshold to powered state, is 0.3 ms. If VDDO only dips below 2.1 V (VDDOK level in Figure 3.1) but stays
above RSTB level, the start-up time is 1 μs.
Table 3.2. Si86SS Logic Operation
VI Input1, 2 VDDI State VDDO State1, 3, 4 VI Output1, 2 Comments
H P P H
Normal operation
L P P L
L Default low options

X UP P
H Default high options
Upon transition of VDDO from unpowered to powered,

X P UP UD5
VO returns to correct state.5
Note:
1. VI and VO are the input and output terminals of any one channel. VDDI and VDDO are the power supplies on the input and
output sides respectively.
2. X = not applicable; H = Logic High; L = Logic Low; Hi-Z = High Impedance.
4. “Unpowered” state (UP) is defined as VDD <2.25 V.
5. UD =Undetermined. Refer to Figure 3.1 Device Behavior during Startup on page 10, the start-up time from unpowered state,
below 1.7 V (RSTB) threshold to powered state, is 0.3 ms. If VDDO only dips below 2.1 V (VDDOK level in Figure 3.1) but stays
above RSTB level, the start-up time is 1 μs.
Table 3.3. Si86SQx Logic Operation
ISO_DIR VDD1 VDD2

Ax1 Bx1 DIR1 1 EN_A1 EN_B1 Notes
State2, 3 State2, 3
X Hi-Z H H X L P P Direction is set as input = A; output = B
L L H H X H P P Direction is set as input = A; output = B
H H H H X H P P Direction is set as input = A; output = B
Hi-Z X L L L X P P Direction is set as input = B; output = A
L L L L H X P P Direction is set as input = B; output = A
H H L L H X P P Direction is set as input = B; output = A
UD X X L X X UP P Direction is not set properly if any supply is UP4
X UD X L X X P UP Direction is not set properly if any supply is UP4
Note:
1. X = Not Applicable; H = Logic High; L = Logic Low; Hi-Z = High Impedance; UD = Undetermined.
3. “Unpowered” state (UP) is defined as VDD <2.25 V.
4. 100 kΩ weak pulldown on I/O when the VDD is UP.
3.1 Device Startup, UVLO, and Reset Functionality
Outputs are held low during powerup until VDD is above the UVLO threshold for time period tSTART. Following this, the outputs follow
the states of inputs. The start-up time of the device is estimated to be 0.3 ms due to the device initialization time. During this time, the
outputs will have a 100 kΩ pulldown resistor that will pull the outputs low. After stabilization, the outputs will transition to the default
output state indicated by the particular product option.
Undervoltage Lockout (UVLO) is provided to prevent erroneous operation during device startup and shutdown or when VDD is below
its specified operating circuits range. Side A and Side B each have their own undervoltage lockout monitors. Each side can enter
or exit UVLO independently. For example, referring to the figure below, Side A unconditionally enters UVLO when VDD1 falls below
VDD1(UVLO–) and exits UVLO when VDD1 rises above VDD1(UVLO+). Side B operates the same as Side A with respect to its VDD2
supply.
Along with UVLO, each side has its own self biased circuitry that can detect supply going low enough and issue a complete reset of the
part. This is done to avoid loss of device configuration for the particular product option. Referring to the figure below, Side A goes into
reset as soon as VDD1 goes below RSTB- (~1.7 V) and comes out of reset when VDD1 goes above RSTB+. When the supply voltage
is above RSTB+ the device configuration is re-loaded. Side B operates the same as Side A with respect to its VDD2 supply.
UVLO+
UVLO-
RSTB+
RSTB-
VDD1
UVLO+
UVLO-
RSTB+
RSTB-
VDD2
Input (Side A)
Follows input Follows input Follows input Follows input Follows input
Output (Side B) Out goes low or high Out goes low or high 100 kΩ 100 kΩ
based on OPN based on OPN pulldown pulldown
Side A reset
Side B reset
Device configuration
read cycle Side A
Device configuration
read cycle Side B
Figure 3.1. Device Behavior during Startup
Figure 3.2. Device Behavior during Normal Operation
3.2 Layout Considerations
To ensure safety in the end-user application, high-voltage circuits (i.e., circuits with >30 VAC) must be physically separated from the
safety extra-low-voltage circuits (SELV is a circuit with <30 VAC) by a certain distance (creepage/clearance). If a component, such as
a digital isolator, straddles this isolation barrier, it must meet those creepage/clearance requirements and provide a sufficiently large
high-voltage breakdown protection rating (commonly referred to as working voltage protection). Table 4.7 Insulation and Safety-Related
Specifications on page 48 and Table 4.9 IEC 60747-17 Insulation Characteristics for Si86Sx 1 on page 49 detail the working voltage
and creepage/clearance capabilities of the Si86Sx. These tables also detail the component standards (UL1577, IEC 60747-17), which
are readily accepted by certification bodies to provide proof for end-system specifications requirements. Refer to the end-system
specification (61010-1, 62368-1, 60601-1, etc.) requirements before starting any design that uses a digital isolator.
3.2.1 Supply Bypass
The Si86Sx family requires a 0.1 µF bypass capacitor between VDD1 and GND1 and VDD2 and GND2. The capacitor should be
placed as close as possible to the package. To enhance the robustness of a design, the user may also include resistors (50–300 Ω ) in
series with the inputs and outputs if the system is excessively noisy.
3.2.2 Output Pin Termination
The nominal output impedance of an isolator driver channel is approximately 50 Ω, ±40%, which is a combination of the value of the on-
chip series termination resistor and channel resistance of the output driver FET. When driving loads where transmission line effects will
be a factor, output pins should be appropriately terminated with controlled impedance PCB traces.
3.3 Fail-Safe Operating Mode
Si86Sx devices feature a selectable (by ordering option) mode whereby the default output state (when the input supply is unpowered)
can either be a logic high or logic low when the output supply is powered. See Table 3.1 Si86S6x/Lx/Mx Logic Operation on page 8 and
Section 1. Ordering Guide for more information.
3.4 Device Features and System Overview
3.4.1 Low Power Mode Operation
The Si86SLx devices are optimized for lower-power operation compared to the Si86S6x options. Typically, they consume 0.25 mA per
channel less current in quiescent mode. The pinouts are no different than the Si86S6x options. This mode is always turned for these
devices. The architecture is tuned in favor of power savings rather than higher performance in terms of timing specifications.
3.4.2 Sleep Mode Operation
This new feature is very useful for power savings without compromising on performance. Instead of trading off data rate or CMTI
performance for power savings, these options provide an SMB pin that can be used to put the device in sleep mode when not in
operation. For example, the Si86SM42 is a four-channel device with two forward channels and two reverse channels. The left, “A”, side
of the device has an SMB pin which when driven high (or left unconnected) enables the device but when driven low puts the device into
sleep mode with 750 µA per side. In this mode, one isolation channel is always active to read the status of the SMB pin and to restart
the entire device when SMB is driven high or left open, including the isolated side.
VDD1 1 16 VDD2
GND1 2 15 GND2
A1 3
HF
XMTR Isolation Barrier HF
RCVR 14 B1
A2 4
HF
XMTR
HF
RCVR 13 B2
A3 5
HF
RCVR
HF
XMTR 12 B3
A4 6
HF
RCVR
HF
XMTR 11 B4
SMB 7 HF
XMTR
HF
RCVR 10 NC
GND1 8 9 GND2
Si86SM42
SMB high low
Outputs tristate, transmitters off

B1 – B2, A3 – A4 High or low
Figure 3.3. Sleep Mode Operation
3.4.3 SPI Operation for Si86SSx
The Si86SS41 is a four-channel device with three forward channels and one reverse channel. The non-isolated or main (controller)
side input pins are MCSB (main side SPI chip select), MCLK (main side SPI clock), and MO (main side SPI MOSI). The non-isolated
or main side output pin is MI (main side SPI MISO). The isolated or secondary (peripheral) side output pin is SCSB (secondary side
SPI chip select), SCLK (secondary side SPI clock), and SI (secondary side SPI MOSI). The isolated or secondary side input pin is SO
(secondary side SPI MISO).
MO SI
MI SO
Figure 3.4. Basic SPI
MO SI SI0
MI SO
SO0
SO0
SIn
MO SI
MI SO
SOn
Figure 3.5. SPI Arrangement with Buffered MI
3.4.4 Custom QSPI Implementation Mode
The Si86SQ44 is a five-channel device with four reversible channels and one forward direction channel (DIR_IN). The DIR_IN pin when
driven high configures the device for signal flow from Side A to Side B. The DIR_OUT pin provides an isolated copy of the DIR_IN
state. The DIR_IN pin when driven low configures the device for signal flow from B to A. Each side of the device also has an enable
pin (EN_A, EN_B) which when driven high enables the transmitter and receiver circuits, and when driven low configures the outputs as
tristate. A 10 kΩ pull up resistor to the corresponding VDD is recommended for each enable pin.
The direction control feature of the Si86SQ44 can be useful in implementing a bi-directional (reversible) isolated bus.
Quad SPI is commonly used for faster data transfer from low pin count external memory. It is similar to SPI, but it has four data lines
instead of two (MOSI and MISO), and the data lines operates in half-duplex mode with all four lines either reading or writing four bits
of data on the same clock edge. Because QSPI operates in half-duplex, the Si86SQ44 can be used for the data lines as it provides
direction control of four isolated channels.
VDD1 1 16 VDD2
EN_A 2 15 EN_B
A1 3
HF
XMTR
HF
RCVR 14 B1
HF HF
RCVR XMTR
A2 4
HF
XMTR
Isolation Barrier HF
RCVR 13 B2
HF HF
RCVR XMTR
HF HF
A3 5 XMTR RCVR 12 B3
HF HF
RCVR XMTR
A4 6
HF
XMTR
HF
RCVR 11 B4
HF HF
RCVR XMTR
DIR 7 HF HF
10 ISO_DIR
RCVR XMTR
GND1 8 9 GND2
Custom QSPI Isolator

Figure 3.6. Si86SQ44 Configuration
3.4.5 Input Noise Filters with Deglitch Times of 30 ns
This product family is orderable with input deglitch filters which have delay times of 30 ns. These filters remove undesirable noise
pulses (glitches) from the input signal so that the isolator only produces an output for a valid input. Any input pulse which lasts less than
the deglitch time will not be passed by the filter. Any other input pulse will be passed by the filter and delayed by the filter delay time.
Please see figures below.
Filter Delay td td
Input Pulse Width < td
No output
Input Pulse Width = td
Output delayed by td
Input Pulse Width > td
Output delayed by td
Figure 3.7. Input Noise Filter Functionality
Si86S63x/64x/S4x/Q4x/66x: Multi-Channel Digital Isolators • Electrical Specifications
4. Electrical Specifications
Table 4.1. Recommended Operating Conditions
Parameter Symbol Min Typ Max Unit
Junction Operating Temperature TJ — — 150 °C
Ambient Operating Temperature1 TA –40 25 125 °C
Supply Voltage VDD1, VDD2 2.25 — 5.5 V
Note:
1. The maximum ambient temperature is dependent on data frequency, output loading, number of operating channels, and supply
voltage.
Table 4.2. Electrical Characteristics
TA = –40 to 125°C; VDD1, VDD2 as specified in Recommended Operating Conditions Table above.
Test
Parameter Symbol Min Typ Max Unit
Condition
VDD1, VDD2
VDD Undervoltage Threshold VDDUV+ 2.14 2.18 2.25 V
rising
VDD1, VDD2
VDD Undervoltage Threshold VDDUV– 2.01 2.05 2.10 V
falling
VDD Undervoltage Hysteresis VDDHYS 105 131 150 mV
Input Hysteresis VHYS 0.15*VDDx — — V
High Level Input Voltage VIH 0.7*VDDx — — V
Low Level Input Voltage VIL — — 0.3*VDDx V
VDD1,
High Level Output Voltage VOH loh = –4 mA — — V
VDD2–0.4
Low Level Output Voltage VOL lol = 4 mA — — 0.4 V
Output Impedance ZO — 50 — Ω
Note:
1. The nominal output impedance of an isolator driver channel is approximately 50 Ω, ±40%, which is a combination of the value of
the on-chip series termination resistor and channel resistance of the output driver FET. When driving loads where transmission
line effects will be a factor, output pins should be appropriately terminated with controlled-impedance PCB traces.
2. tPSK(P-P) is the magnitude of the difference in propagation delay times measured between different units operating at the same
supply voltages, load, and ambient temperature.
VDD1 = 5.0 V ±10%, VDD2 = 5.0 V ±10%, TA = –40 to 125°C
Parameter Symbol Test Condition Min Typ Max Unit
Si86S630Bx, Ex
IDD1 VI = 0(Bx), 1(Ex) 0.70 0.85
IDD2 VI = 0(Bx), 1(Ex) — 2.19 2.76 mA
IDD1 VI = 1(Bx), 0(Ex) 2.47 3.03
IDD2 VI = 1(Bx), 0(Ex) 2.29 2.83
IDD1 All Inputs = 500 kHz Square Wave, 1.58 1.93

—
CI = 15 pF on All Outputs
IDD2 2.26 2.82
IDD1 All Inputs = 5 MHz Square Wave, 1.59 1.93

— mA
IDD2 3.58 4.28

—
IDD2 14.85 19.30
Si86S631Bx, Ex
IDD1 VI = 0(Bx), 1(Ex) 1.28 1.56
IDD2 VI = 0(Bx), 1(Ex) — 1.84 2.27 mA
IDD1 VI = 1(Bx), 0(Ex) 2.54 3.00
IDD2 VI = 1(Bx), 0(Ex) 2.25 3.02

—
IDD2 2.20 2.66

— mA
IDD2 3.02 3.73

—
IDD2 10.53 13.65
Si86S640Bx, Ex
IDD1 VI = 0(Bx), 1(Ex) 0.84 1.02
IDD2 VI = 0(Bx), 1(Ex) — 2.83 3.56 mA
IDD1 VI = 1(Bx), 0(Ex) 3.24 3.95
IDD2 VI = 1(Bx), 0(Ex) 2.96 3.64

—
IDD2 2.93 3.65

— mA
IDD2 4.59 5.79

—
IDD2 19.77 25.83
Si86S641Bx, Ex
IDD1 VI = 0(Bx), 1(Ex) 1.32 1.68
IDD2 VI = 0(Bx), 1(Ex) — 2.29 2.96 mA
IDD1 VI = 1(Bx), 0(Ex) 3.17 4.04
IDD2 VI = 1(Bx), 0(Ex) 3.00 3.79

—
IDD2 2.66 3.40

— mA
IDD2 4.06 5.00

—
IDD2 15.45 20.03
Si86S642Bx, Ex
IDD1 VI = 0(Bx), 1(Ex) 1.86 2.41
IDD2 VI = 0(Bx), 1(Ex) — 1.89 2.44 mA
IDD1 VI = 1(Bx), 0(Ex) 3.12 3.97
IDD2 VI = 1(Bx), 0(Ex) 3.12 3.97

—
IDD2 2.55 3.26

— mA
IDD2 3.43 4.33

—
IDD2 11.02 14.35
Si86S640Fx, Hx
IDD1 VI = 0(Bx), 1(Ex) 1.08 1.23
IDD2 VI = 0(Bx), 1(Ex) — 3.05 3.81 mA
IDD1 VI = 1(Bx), 0(Ex) 3.53 4.13
IDD2 VI = 1(Bx), 0(Ex) 3.18 3.89

—
IDD2 3.15 3.91

— mA
IDD2 4.59 6.05

—
IDD2 19.77 26.09
Si86S641Fx, Hx
IDD1 VI = 0(Bx), 1(Ex) 1.55 1.87
IDD2 VI = 0(Bx), 1(Ex) — 2.52 3.14 mA
IDD1 VI = 1(Bx), 0(Ex) 3.42 4.11
IDD2 VI = 1(Bx), 0(Ex) 3.32 3.94

—
IDD2 2.90 3.56

— mA
IDD2 4.06 5.16

—
IDD2 15.45 20.19
Si86S642Fx, Hx
IDD1 VI = 0(Bx), 1(Ex) 2.12 2.57
IDD2 VI = 0(Bx), 1(Ex) — 2.14 2.60 mA
IDD1 VI = 0(Bx), 1(Ex) 3.41 4.07
IDD2 VI = 0(Bx), 1(Ex) 3.42 4.09

—
IDD2 2.81 3.37

— mA
IDD2 3.43 4.44
VDD1 All Inputs = 50 MHz Square Wave, 11.02 14.46

—
IDD2 11.02 14.46
Si86SL40Bx, Ex
IDD1 VI = 0(Bx), 1(Ex) 0.79 0.96
IDD2 VI = 0(Bx), 1(Ex) — 2.07 2.63 mA
IDD1 VI = 0(Bx), 1(Ex) 2.89 3.54
IDD2 VI = 0(Bx), 1(Ex) 2.13 2.67

—
IDD2 2.14 2.71

— mA
IDD2 3.74 4.85

—
IDD2 18.62 24.49
Si86SL41Bx, Ex
IDD1 VI = 0(Bx), 1(Ex) 1.07 1.35
IDD2 VI = 0(Bx), 1(Ex) — 1.69 2.18 mA
IDD1 VI = 0(Bx), 1(Ex) 2.63 3.25
IDD2 VI = 0(Bx), 1(Ex) 2.25 2.83

—
IDD2 1.99 2.53

— mA
IDD2 3.37 4.13

—
IDD2 14.53 18.87
Si86SL42Bx, Ex
IDD1 VI = 0(Bx), 1(Ex) 1.46 1.85
IDD2 VI = 0(Bx), 1(Ex) — 1.48 1.86 mA
IDD1 VI = 1(Bx), 0(Ex) 2.54 3.15
IDD2 VI = 1(Bx), 0(Ex) 2.56 3.17

—
IDD2 2.04 2.53

— mA
IDD2 2.91 3.61

—
IDD2 10.35 13.43
Si86SM40Bx, Ex
IDD1 VI = 0(Bx), 1(Ex) 1.51 1.85
IDD2 VI = 0(Bx), 1(Ex) 3.50 4.47
IDD1 VI = 1(Bx), 0(Ex) — 3.95 4.89 mA
IDD2 VI = 1(Bx), 0(Ex) 3.63 4.57
IDD1 SMB = 0 (sleep mode) 0.78 0.95

—
IDD2 3.59 4.56

— mA
IDD2 5.53 6.70

—
IDD2 20.30 26.74
Si86SM41Bx, Ex
IDD1 VI = 0(Bx), 1(Ex) 2.07 2.62
IDD2 VI = 0(Bx), 1(Ex) 2.93 3.73
IDD1 VI = 1(Bx), 0(Ex) — 3.91 4.92 mA
IDD2 VI = 1(Bx), 0(Ex) 3.64 4.53

—
IDD2 3.30 4.16

— mA
IDD2 4.99 5.76

—
IDD2 15.97 20.79
Si86SM42Bx, Ex
IDD1 VI = 0(Bx), 1(Ex) 2.62 3.36
IDD2 VI = 0(Bx), 1(Ex) 2.52 3.23
IDD1 VI = 1(Bx), 0(Ex) — 3.89 4.92 mA
IDD2 VI = 1(Bx), 0(Ex) 3.78 4.77

—
IDD2 3.17 4.02

— mA
IDD2 4.36 5.09

—
IDD2 11.55 15.11
Si86SS41Bx, Ex
IDD1 VI = 0(Bx), 1(Ex) 1.37 1.76
IDD2 VI = 0(Bx), 1(Ex) — 2.43 3.15 mA
IDD1 VI = 1(Bx), 0(Ex) 3.12 4.01
IDD2 VI = 1(Bx), 0(Ex) 3.13 3.95

— mA
IDD2 2.80 3.58

— mA
CI = 15 pF on All Outputs, MCSB =0
IDD2 4.06 4.65

— mA
CI = 15 pF on All Outputs, MCSB = 1
IDD2 4.06 4.65

— mA
IDD2 11.25 14.67

— mA
IDD2 11.25 14.67
Si86SQ44Bx, Ex
IDD1 VI = 0(Bx), 1(Ex), DIR = 1 3.82 4.85
IDD2 VI = 0(Bx), 1(Ex), DIR = 1 3.47 4.45
IDD1 VI = 1(Bx), 0(Ex), DIR = 1 6.87 8.51
IDD2 VI = 1(Bx), 0(Ex), DIR = 1 — 3.60 4.51 mA
IDD1 VI = 0(Bx), 1(Ex), DIR = 0 3.05 3.91
IDD2 VI = 0(Bx), 1(Ex), DIR = 0 3.76 4.83
IDD1 VI = 1(Bx), 0(Ex), DIR = 0 3.19 3.99
IDD2 VI = 1(Bx), 0(Ex), DIR = 0 6.81 8.48

— mA
CI = 15 pF on All Outputs, DIR = 1
IDD2 3.55 4.49

— mA
IDD2 3.89 4.97

— mA
IDD2 5.34 6.63

— mA
IDD2 5.17 6.52

— mA
IDD2 20.52 26.67

— mA
IDD2 5.17 6.52
Si86S660Bx, Ex
IDD1 VI = 0(Bx), 1(Ex) 0.96 1.16
IDD2 VI = 0(Bx), 1(Ex) — 4.05 5.09 mA
IDD1 VI = 1(Bx), 0(Ex) 4.55 5.56
IDD2 VI = 1(Bx), 0(Ex) 4.24 5.23

— mA
IDD2 4.21 5.35

— mA
IDD2 6.48 8.56

— mA
IDD2 28.35 37.43
Si86S661Bx, Ex
IDD1 VI = 0(Bx), 1(Ex) 1.53 1.87
IDD2 VI = 0(Bx), 1(Ex) — 3.51 4.47 mA
IDD1 VI = 1(Bx), 0(Ex) 4.61 5.52
IDD2 VI = 1(Bx), 0(Ex) 4.28 5.31
IDD1 3.09 3.70

All Inputs = 500 kHz Square Wave, CI = 15 pF on All Out- — mA
IDD2 puts 3.93 4.93
IDD1 3.49 4.24

— mA
IDD2 All Inputs = 5 MHz Square Wave, CI = 15 pF on All Outputs 5.96 7.60
IDD1 7.13 9.05

All Inputs = 50 MHz Square Wave, CI = 15 pF on All Out- — mA
IDD2 puts 24.19 31.66
Si86S662Bx, Ex
IDD1 VI = 0(Bx), 1(Ex) 1.99 2.38
IDD2 VI = 0(Bx), 1(Ex) — 2.93 3.66 mA
IDD1 VI = 1(Bx), 0(Ex) 4.47 5.24
IDD2 VI = 1(Bx), 0(Ex) 4.27 5.13
IDD1 3.25 3.83

IDD2 puts 3.62 4.41
IDD1 4.11 4.89

— mA
IDD1 11.39 15.52

IDD2 puts 19.92 25.79
Si86S663Bx, Ex
IDD1 VI = 0(Bx), 1(Ex) 2.59 3.40
IDD2 VI = 0(Bx), 1(Ex) — 2.59 3.40 mA
IDD1 VI = 1(Bx), 0(Ex) 4.55 5.79
IDD2 VI = 1(Bx), 0(Ex) 4.55 5.79

— mA
IDD2 3.56 4.53

— mA
IDD2 4.73 6.13

— mA
IDD2 15.66 20.57
Timing Characteristics
Data Rate Si86Sx (no

— — 150 Mbps
deglitch)
Data Rate Si86Sx

— — 10 Mbps
(with 30 ns deglitch)
Pulse Width Si86S6x (no

6.7 — — ns
deglitch)
Pulse Width Si86S6X

100 — — ns
Propagation Delay (no

tPHL, tPLH See Figure 4.2 Propagation Delay Timing on page 43. 7 9 14 ns
deglitch)
Pulse Width Distortion

(no deglitch) PWD See Figure 4.2 Propagation Delay Timing on page 43. — — 2 ns
|tPLH – tPHL|
Propagation Delay Skew

tPSK(P-P) — 2.0 4.5 ns
(no deglitch)
Channel-Channel Skew
tPSK — 0.8 2 ns
(no deglitch)
Propagation Delay (30

ns deglitch)

(30 ns deglitch) PWD See Figure 4.2 Propagation Delay Timing on page 43. — — 2 ns
|tPLH – tPHL|

tPSK(P-P) — 2.0 4.5 ns
(30 ns deglitch)
tPSK — 1.5 4 ns
(30 ns deglitch)

(Si86SLx, low power tPHL, tPLH See Figure 4.2 Propagation Delay Timing on page 43. 8.5 11.5 18 ns
mode)

(Si86SLx, low power
PWD See Figure 4.2 Propagation Delay Timing on page 43. — — 7 ns
mode)
|tPLH – tPHL|

(Si86SLx, low power tPSK(P-P) — 2.0 4.5 ns
mode)
(Si86SLx, low power tPSK — 1.5 7 ns
mode)
Direction Transition De-

tDIR 36 55 80 ns
lay (Si86SQx)
CL = 15 pF
Output Rise Time tr — 2.5 — ns
See Figure 4.2 Propagation Delay Timing on page 43.
CL = 15 pF
Output Fall Time tf — 2.5 — ns
Peak Eye Diagram Jitter tJIT(PK) See Figure 2.3 Eye Diagram on page 7 — 350 — ps
Common Mode Transi-

See Figure 4.4 Common-Mode Transient Immunity Test Cir-
ent Immunity
cuit on page 44
Si86Sx (no deglitch) CMTI 100 — — kV/µs
VI = VDD or 0 V
Si86Sx (with 30 ns de-
VCM = ±1500 V 150 — —
glitch)
Enable to Data Valid ten1 See Figure 4.1 ENABLE Timing Diagram on page 43 — 12 20 ns
SMB to Sleep Mode

tSM See Figure 4.3 SMB Timing on page 44 — 14 23 ns
Delay (Si86SMx)
Enable to Data Tri-State ten2 See Figure 4.1 ENABLE Timing Diagram on page 43 — 11 17 ns
SMB to Wake-Up from

tWU See Figure 4.3 SMB Timing on page 44 — 700 1500 ns
Sleep Mode
Input power loss to valid

tSD See Figure 4.1 ENABLE Timing Diagram on page 43 — 8.0 12 ns
default output
Start-up Time tSU — — 300 µs
Input Leakage Current IL — — ±8 µA
EN, SMB, MCSB, DIR

IENH, IENL VENx = VIH or VIL — — 90 µA
Input Current
Note:
3. Start-up time is the time period from the application of power to the appearance of valid data at the output. The device
initialization time is included in the 300 µs specification.
VDD1 = 3.3 V ±10%, VDD2 = 3.3 V ±10%, TA = –40 to 125 °C
Si86S630Bx, Ex
IDD1 VI = 0(Bx), 1(Ex) 0.66 0.81
IDD2 VI = 0(Bx), 1(Ex) — 2.16 2.72 mA
IDD1 VI = 1(Bx), 0(Ex) 2.43 2.98
IDD2 VI = 1(Bx), 0(Ex) 2.25 2.78
IDD1 All Inputs = 500 kHz Square Wave, — 1.54 1.87

mA
IDD2 2.21 2.76

— mA
IDD2 3.06 3.77

— mA
IDD2 10.46 13.54
Si86S631Bx, Ex
IDD1 VI = 0(Bx), 1(Ex) 1.25 1.51
IDD2 VI = 0(Bx), 1(Ex) — 1.8 2.22 mA
IDD1 VI = 1(Bx), 0(Ex) 2.5 2.95
IDD2 VI = 1(Bx), 0(Ex) 2.48 2.97

— mA
IDD2 2.15 2.6

— mA
IDD2 2.66 3.21

— mA
IDD2 7.59 9.13
Si86S640Bx, Ex
IDD1 VI = 0(Bx), 1(Ex) 0.81 0.97
IDD2 VI = 0(Bx), 1(Ex) — 2.8 3.51 mA
IDD1 VI = 1(Bx), 0(Ex) 3.2 3.89
IDD2 VI = 1(Bx), 0(Ex) 2.92 3.64
IDD1 All Inputs = 500 kHz Square Wave, 2 2.4

— mA
IDD2 2.88 3.57

— mA
IDD2 3.92 4.92

— mA
IDD2 13.79 17.94
Si86S641Bx, Ex
IDD1 VI = 0(Bx), 1(Ex) 1.28 1.64
IDD2 VI = 0(Bx), 1(Ex) — 2.26 2.91 mA
IDD1 VI = 1(Bx), 0(Ex) 3.13 3.97
IDD2 VI = 1(Bx), 0(Ex) 2.96 3.73

— mA
IDD2 2.61 3.33

— mA
IDD2 3.54 4.34

— mA
IDD2 10.95 14.11
Si86S642Bx, Ex
IDD1 VI = 0(Bx), 1(Ex) 1.83 2.37
IDD2 VI = 0(Bx), 1(Ex) — 1.85 2.39 mA
IDD1 VI = 1(Bx), 0(Ex) 3.08 3.91
IDD2 VI = 1(Bx), 0(Ex) 3.08 3.91

— mA
IDD2 2.5 3.19

— mA
IDD2 3.07 3.86

— mA
IDD2 8.00 10.38
Si86S640Fx, Hx
IDD1 VI = 0(Bx), 1(Ex) 1.04 1.18
IDD2 VI = 0(Bx), 1(Ex) — 3.01 3.76 mA
IDD1 VI = 1(Bx), 0(Ex) 3.49 4.06
IDD2 VI = 1(Bx), 0(Ex) 3.14 3.85

— mA
IDD2 3.1 3.83

— mA
IDD2 3.92 5.18

— mA
IDD2 13.79 18.20
Si86S641Fx, Hx
IDD1 VI = 0(Bx), 1(Ex) 1.51 1.83
IDD2 VI = 0(Bx), 1(Ex) — 2.49 3.09 mA
IDD1 VI = 1(Bx), 0(Ex) 3.38 4.05
IDD2 VI = 1(Bx), 0(Ex) 3.19 3.88

— mA
IDD2 2.85 3.5

— mA
IDD2 3.54 4.51

— mA
IDD2 10.95 14.28
Si86S642Fx, Hx
IDD1 VI = 0(Bx), 1(Ex) 2.09 2.52
IDD2 VI = 0(Bx), 1(Ex) — 2.11 2.55 mA
IDD1 VI = 1(Bx), 0(Ex) 3.37 4.02
IDD2 VI = 1(Bx), 0(Ex) 3.38 4.03

— mA
IDD2 2.76 3.3

— mA
IDD2 3.07 3.97

— mA
IDD2 8.00 10.49
Si86SL40Bx, Ex
IDD1 VI = 0(Bx), 1(Ex) 0.76 0.91
IDD2 VI = 0(Bx), 1(Ex) — 2.04 2.59 mA
IDD1 VI = 1(Bx), 0(Ex) 2.85 3.47
IDD2 VI = 1(Bx), 0(Ex) 2.09 2.62

— mA
IDD2 2.08 2.63

— mA
IDD2 3.08 3.98

— mA
IDD2 12.96 17.00
Si86SL41Bx, Ex
IDD1 VI = 0(Bx), 1(Ex) 1.04 1.3
IDD2 VI = 0(Bx), 1(Ex) — 1.65 2.13 mA
IDD1 VI = 1(Bx), 0(Ex) 2.59 3.2
IDD2 VI = 1(Bx), 0(Ex) 2.21 2.78

— mA
IDD2 1.94 2.46

— mA
IDD2 2.86 3.47

— mA
IDD2 10.27 13.24
Si86SL42Bx, Ex
IDD1 VI = 0(Bx), 1(Ex) 1.43 1.81
IDD2 VI = 0(Bx), 1(Ex) — 1.44 1.82 mA
IDD1 VI = 1(Bx), 0(Ex) 2.5 3.08
IDD2 VI = 1(Bx), 0(Ex) 2.52 3.11

— mA
IDD2 1.99 2.47

— mA
IDD2 2.54 3.14

CI = 15 pF on All Outputs — mA
IDD2 7.48 9.66
Si86SM40Bx, Ex
IDD1 VI = 0(Bx), 1(Ex) 1.48 1.81
IDD2 VI = 0(Bx), 1(Ex) 3.46 4.41
IDD1 VI = 1(Bx), 0(Ex) — 3.91 4.81 mA
IDD2 VI = 1(Bx), 0(Ex) 3.59 4.5

— mA
IDD2 3.54 4.48

— mA
IDD2 4.70 5.83

— mA
IDD2 14.31 18.85
Si86SM41Bx, Ex
IDD1 VI = 0(Bx), 1(Ex) 2.03 2.57
IDD2 VI = 0(Bx), 1(Ex) 2.9 3.68
IDD1 VI = 1(Bx), 0(Ex) — 3.86 4.85 mA
IDD2 VI = 1(Bx), 0(Ex) 3.6 3.68

— mA
IDD2 3.25 4.08

CI = 15 pF on All Outputs — mA
IDD2 4.32 5.09
IDD1 All Inputs = 50 MHz Square Wave, CI = 15 pF on All Out- 5.65 7.30
— mA
IDD2 puts 11.47 14.86
Si86SM42Bx, Ex
IDD1 VI = 0(Bx), 1(Ex) 2.58 3.31
IDD2 VI = 0(Bx), 1(Ex) 2.49 3.19
IDD1 VI = 1(Bx), 0(Ex) — 3.85 4.85 mA
IDD2 VI = 1(Bx), 0(Ex) 3.74 4.71

— mA
IDD2 3.12 3.95

— mA
IDD2 3.84 4.62
IDD1 All Inputs = 50 MHz Square Wave, CI = 15 pF on All Out- 8.60 11.28
— mA
IDD2 puts 8.52 11.14
Si86SS41Bx, Ex
IDD1 VI = 0(Bx), 1(Ex) 1.31 1.69
IDD2 VI = 0(Bx), 1(Ex) — 3.09 3.1 mA
IDD1 VI = 1(Bx), 0(Ex) 3.08 3.95
IDD2 VI = 1(Bx), 0(Ex) 3.09 3.9

— mA
IDD2 2.75 3.51

— mA
IDD2 3.31 3.98

— mA
IDD2 3.31 3.98

— mA
IDD2 6.86 8.93

— mA
IDD2 6.86 8.93
Si86SQ44Bx, Ex
IDD1 VI = 0(Bx), 1(Ex), DIR = 1 3.78 4.08
IDD2 VI = 0(Bx), 1(Ex), DIR = 1 3.44 4.41
IDD1 VI = 1(Bx), 0(Ex), DIR = 1 6.81 8.42
IDD2 VI = 1(Bx), 0(Ex), DIR = 1 — 3.57 4.47 mA
IDD1 VI = 0(Bx), 1(Ex), DIR = 0 3.00 3.84
IDD2 VI = 0(Bx), 1(Ex), DIR = 0 3.72 4.78
IDD1 VI = 1(Bx), 0(Ex), DIR = 0 3.13 3.92
IDD2 VI = 1(Bx), 0(Ex), DIR = 0 6.75 7.46

— mA
IDD2 3.51 4.44
IDD1 All Inputs = 500 kHz Square Wave, — 2.57 3.36

mA
IDD2 3.82 4.88

— mA
IDD2 4.66 5.79

— mA
IDD2 5.08 6.45

— mA
IDD2 14.53 18.81

— mA
IDD2 5.08 6.45
Si86S660Bx, Ex
IDD1 VI = 0(Bx), 1(Ex) 0.93 1.11
IDD2 VI = 0(Bx), 1(Ex) — 4.01 5.03 mA
IDD1 VI = 1(Bx), 0(Ex) 4.5 5.48
IDD2 VI = 1(Bx), 0(Ex) 4.2 5.18

— mA
IDD2 4.14 5.14

— mA
IDD2 5.53 7.16

— mA
IDD2 20.33 26.70
Si86S661Bx, Ex
IDD1 VI = 0(Bx), 1(Ex) 1.50 1.82
IDD2 VI = 0(Bx), 1(Ex) — 3.48 4.42 mA
IDD1 VI = 1(Bx), 0(Ex) 4.56 5.44
IDD2 VI = 1(Bx), 0(Ex) 4.24 5.25
IDD1 3.04 3.62

IDD2 puts 3.87 4.85
IDD1 3.27 3.96

— mA
IDD1 5.74 7.21

IDD2 puts 17.49 22.82
Si86S662Bx, Ex
IDD1 VI = 0(Bx), 1(Ex) 1.95 2.34
IDD2 VI = 0(Bx), 1(Ex) — 2.89 3.61 mA
IDD1 VI = 1(Bx), 0(Ex) 4.42 5.17
IDD2 VI = 1(Bx), 0(Ex) 4.23 5.07
IDD1 3.20 3.75

IDD2 puts 3.57 4.35
IDD1 3.74 4.42

— mA
IDD1 8.67 10.94

IDD2 puts 14.55 18.73
Si86S663Bx, Ex
IDD1 VI = 0(Bx), 1(Ex) 2.53 3.35
IDD2 VI = 0(Bx), 1(Ex) — 2.53 3.35 mA
IDD1 VI = 1(Bx), 0(Ex) 4.47 5.71
IDD2 VI = 1(Bx), 0(Ex) 4.47 5.71

— mA
IDD2 3.49 4.48

— mA
IDD2 4.21 5.49

— mA
IDD2 11.62 15.26
Data Rate Si86Sx

— — 150 Mbps
(no deglitch)
Data Rate Si86Sx

— — 10 Mbps
Pulse Width Si86S6X

100 — — ns
Propagation Delay tPHL, tPLH See Figure 4.2 Propagation Delay Timing on page 43. 6 9 15 ns
(no deglitch)
Pulse Width Distortion PWD See Figure 4.2 Propagation Delay Timing on page 43. — — 3 ns
(no deglitch)
|tPLH – tPHL|
Propagation Delay Skew tPSK(P-P) — 2.0 4.5 ns

(no deglitch)
Channel-Channel Skew tPSK — 0.9 3 ns

(no deglitch)
Propagation Delay (30 tPHL, tPLH See Figure 4.2 Propagation Delay Timing on page 43. 31 36 42 ns
ns deglitch)
(30 ns deglitch)
|tPLH – tPHL|

(30 ns deglitch)
Channel-Channel Skew tPSK — 1.5 3.5 ns

(30 ns deglitch)
Propagation Delay tPHL, tPLH See Figure 4.2 Propagation Delay Timing on page 43. 7 12 18 ns
(Si86SLx low-power
mode)
(Si86SLx, low-power
mode)
|tPLH – tPHL|

(Si86SLx, low-power
mode)
Channel-Channel Skew tPSK — 1.5 5.5 ns

(Si86SLx, low-power
mode)
Direction Transition tDIR 37 57 83 ns

Delay (Si86SQx)
Output Rise Time tr CL = 15 pF — 2.5 — ns

Output Fall Time tf CL = 15 pF — 2.5 — ns

Common Mode Transi- See Figure 4.4 Common-Mode Transient Immunity Test Cir-
ent Immunity cuit on page 44
Si86Sx (no deglitch) CMTI VI = VDD or 0 V 100 — — kV/µs
Si86Sx (with 30 ns de- VCM = ±1500 V 150 — —

glitch)
SMB to Sleep Mode tSM See Figure 4.3 SMB Timing on page 44 — 15 25 ns
Delay (Si86SMx)
SMB to Wake-Up from tWU See Figure 4.3 SMB Timing on page 44 — 1100 1800 ns
Sleep Mode
Input power loss to valid tSD See Figure 4.1 ENABLE Timing Diagram on page 43 — 8.0 12 ns
default output
EN, SMB, MCSB, DIR IENH, IENL VENx = VIH or VIL — — 60 µA

Input Current
Note:
3. Start-up time is the time period from the application of power to the appearance of valid data at the output. The device
initialization time is included in the 300 µs specification.
VDD1 = 2.5 V ±10%, VDD2 = 2.5 V ±10%, TA = –40 to 125°C
Si86S630Bx, Ex
IDD1 VI = 0(Bx), 1(Ex) 0.64 0.79
IDD2 VI = 0(Bx), 1(Ex) — 2.14 2.7 mA
IDD1 VI = 1(Bx), 0(Ex) 2.41 2.96
IDD2 VI = 1(Bx), 0(Ex) 2.23 2.76

— mA
IDD2 2.19 2.74

— mA
IDD2 2.82 3.49

— mA
IDD2 8.44 10.91
Si86S631Bx, Ex
IDD1 VI = 0(Bx), 1(Ex) 1.23 1.5
IDD2 VI = 0(Bx), 1(Ex) — 1.78 2.19 mA
IDD1 VI = 1(Bx), 0(Ex) 2.48 2.93
IDD2 VI = 1(Bx), 0(Ex) 2.46 2.95

— mA
IDD2 2.13 2.58

— mA
IDD2 2.49 3.08

— mA
IDD2 6.60 8.03
Si86S640Bx, Ex
IDD1 VI = 0(Bx), 1(Ex) 0.79 0.96
IDD2 VI = 0(Bx), 1(Ex) — 2.77 3.49 mA
IDD1 VI = 1(Bx), 0(Ex) 3.17 3.86
IDD2 VI = 1(Bx), 0(Ex) 2.9 3.58

— mA
IDD2 2.85 3.54

— mA
IDD2 3.62 4.50

— mA
IDD2 11.11 14.39
Si86S641Bx, Ex
IDD1 VI = 0(Bx), 1(Ex) 1.27 1.62
IDD2 VI = 0(Bx), 1(Ex) — 2.23 2.89 mA
IDD1 VI = 1(Bx), 0(Ex) 3.1 3.95
IDD2 VI = 1(Bx), 0(Ex) 2.93 3.72

— mA
IDD2 2.59 3.3

— mA
IDD2 3.31 4.05

— mA
IDD2 8.93 11.47
Si86S642Bx, Ex
IDD1 VI = 0(Bx), 1(Ex) 1.81 2.35
IDD2 VI = 0(Bx), 1(Ex) — 1.83 2.37 mA
IDD1 VI = 1(Bx), 0(Ex) 3.06 3.88
IDD2 VI = 1(Bx), 0(Ex) 3.06 3.88

— mA
IDD2 2.45 3.12

— mA
IDD2 2.90 3.65

— mA
IDD2 6.64 8.60
Si86S640Fx, Hx
IDD1 VI = 0(Bx), 1(Ex) 1.02 1.17
IDD2 VI = 0(Bx), 1(Ex) — 2.99 3.74 mA
IDD1 VI = 1(Bx), 0(Ex) 3.46 4.03
IDD2 VI = 1(Bx), 0(Ex) 3.12 3.82

— mA
IDD2 3.07 3.8

— mA
IDD2 3.62 4.80

— mA
IDD2 11.11 14.69
Si86S641Fx, Hx
IDD1 VI = 0(Bx), 1(Ex) 1.49 1.81
IDD2 VI = 0(Bx), 1(Ex) — 2.46 3.07 mA
IDD1 VI = 1(Bx), 0(Ex) 3.36 4.03
IDD2 VI = 1(Bx), 0(Ex) 3.16 3.86

— mA
IDD2 2.82 3.48

— mA
IDD2 3.31 4.23

— mA
IDD2 8.93 11.65
Si86S642Fx, Hx
IDD1 VI = 0(Bx), 1(Ex) 2.07 2.51
IDD2 VI = 0(Bx), 1(Ex) — 2.09 2.53 mA
IDD1 VI = 1(Bx), 0(Ex) 3.35 3.99
IDD2 VI = 1(Bx), 0(Ex) 3.35 4.01

— mA
IDD2 2.73 3.27

— mA
IDD2 2.90 3.77

— mA
IDD2 6.64 8.72
Si86SL40Bx, Ex
IDD1 VI = 0(Bx), 1(Ex) 0.74 0.89
IDD2 VI = 0(Bx), 1(Ex) — 2.02 2.57 mA
IDD1 VI = 1(Bx), 0(Ex) 2.83 3.45
IDD2 VI = 1(Bx), 0(Ex) 2.08 2.6

— mA
IDD2 2.06 2.6

— mA
IDD2 3.74 4.85

— mA
IDD2 18.62 24.49
Si86SL41Bx, Ex
IDD1 VI = 0(Bx), 1(Ex) 1.02 1.29
IDD2 VI = 0(Bx), 1(Ex) — 1.63 2.11 mA
IDD1 VI = 1(Bx), 0(Ex) 2.57 3.17
IDD2 VI = 1(Bx), 0(Ex) 2.19 2.76

— mA
IDD2 1.92 2.44

— mA
IDD2 3.37 4.13

— mA
IDD2 14.53 18.87
Si86SL42Bx, Ex
IDD1 VI = 0(Bx), 1(Ex) 1.41 1.79
IDD2 VI = 0(Bx), 1(Ex) — 1.42 1.8 mA
IDD1 VI = 1(Bx), 0(Ex) 2.48 3.07
IDD2 VI = 1(Bx), 0(Ex) 2.49 3.08

— mA
IDD2 1.97 2.44

— mA
IDD2 2.91 3.61

— mA
IDD2 10.35 13.43
Si86SM40Bx, Ex
IDD1 VI = 0(Bx), 1(Ex) 1.45 1.78
IDD2 VI = 0(Bx), 1(Ex) 3.44 4.38
IDD1 VI = 1(Bx), 0(Ex) — 3.87 4.78 mA
IDD2 VI = 1(Bx), 0(Ex) 3.57 4.47

— mA
IDD2 3.51 4.44

— mA
IDD2 4.32 5.44

— mA
IDD2 11.62 15.33
Si86SM41Bx, Ex
IDD1 VI = 0(Bx), 1(Ex) 2.01 2.55
IDD2 VI = 0(Bx), 1(Ex) 2.87 3.66
IDD1 VI = 1(Bx), 0(Ex) — 3.84 4.82 mA
IDD2 VI = 1(Bx), 0(Ex) 3.57 4.45

— mA
IDD2 3.23 4.06

— mA
IDD2 4.01 4.81

— mA
IDD2 9.44 12.23
Si86SM42Bx, Ex
IDD1 VI = 0(Bx), 1(Ex) 2.56 3.29
IDD2 VI = 0(Bx), 1(Ex) 2.47 3.16
IDD1 VI = 1(Bx), 0(Ex) — 3.82 4.83 mA
IDD2 VI = 1(Bx), 0(Ex) 3.72 4.68

— mA
IDD2 3.1 3.92

— mA
IDD2 3.60 4.42

— mA
IDD2 CI = 15 pF on All Outputs 7.16 9.37
Si86SS41Bx, Ex
IDD1 VI = 0(Bx), 1(Ex) 1.29 1.66
IDD2 VI = 0(Bx), 1(Ex) — 2.38 3.08 mA
IDD1 VI = 1(Bx), 0(Ex) 3.06 3.93
IDD2 VI = 1(Bx), 0(Ex) 3.07 3.88

— mA
IDD2 2.73 3.48

— mA
IDD2 3.31 3.98

— mA
IDD2 3.31 3.98

— mA
IDD2 6.86 8.93

— mA
IDD2 6.86 8.93
Si86SQ44Bx, Ex
IDD1 VI = 0(Bx), 1(Ex), DIR = 1 3.76 4.77
IDD2 VI = 0(Bx), 1(Ex), DIR = 1 3.42 4.39
IDD1 VI = 1(Bx), 0(Ex), DIR = 1 6.75 8.36
IDD2 VI = 1(Bx), 0(Ex), DIR = 1 — 3.55 4.45 mA
IDD1 VI = 0(Bx), 1(Ex), DIR = 0 2.97 3.81
IDD2 VI = 0(Bx), 1(Ex), DIR = 0 3.70 4.76
IDD1 VI = 1(Bx), 0(Ex), DIR = 0 3.10 3.88
IDD2 VI = 1(Bx), 0(Ex), DIR = 0 6.70 8.33

— mA
IDD2 3.49 4.42

— mA
IDD2 3.77 4.83

— mA
IDD2 4.35 5.42

— mA
IDD2 5.02 6.42

— mA
IDD2 11.84 15.31

— mA
IDD2 CI = 15 pF on All Outputs, DIR = 0 5.02 6.42
Si86S660Bx, Ex
IDD1 VI = 0(Bx), 1(Ex) 0.91 1.10
IDD2 VI = 0(Bx), 1(Ex) — 3.99 5.01 mA
IDD1 VI = 1(Bx), 0(Ex) 4.46 5.45
IDD2 VI = 1(Bx), 0(Ex) 4.18 5.16

— mA
IDD2 4.1 5.1

— mA
IDD2 5.10 6.60

— mA
IDD2 16.34 21.44
Si86S661Bx, Ex
IDD1 VI = 0(Bx), 1(Ex) 1.48 1.80
IDD2 VI = 0(Bx), 1(Ex) — 3.46 4.40 mA
IDD1 VI = 1(Bx), 0(Ex) 4.53 5.41
IDD2 VI = 1(Bx), 0(Ex) 4.22 5.23
IDD1 3.00 3.59

IDD2 puts 3.84 4.82
IDD1 3.17 3.80

— mA
IDD1 5.04 6.31

IDD2 puts 14.16 18.43
Si86S662Bx, Ex
IDD1 VI = 0(Bx), 1(Ex) 1.93 2.32
IDD2 VI = 0(Bx), 1(Ex) — 2.88 3.59 mA
IDD1 VI = 1(Bx), 0(Ex) 4.39 5.14
IDD2 VI = 1(Bx), 0(Ex) 4.21 5.05

— mA
IDD2 3.54 4.32

— mA
IDD2 4.38 5.32

— mA
IDD2 11.88 15.21
Data Rate Si86Sx

— — 150 Mbps
(no deglitch)
Data Rate Si86Sx

— — 10 Mbps
Pulse Width Si86S6x

6.7 — — ns
(no deglitch)
Pulse Width Si86S6X

100 — — ns
Propagation Delay
(no deglitch)

(no deglitch) PWD See Figure 4.2 Propagation Delay Timing on page 43. — — 2 ns
|tPLH – tPHL|

tPSK(P-P) — 2.0 4.5 ns
(no deglitch)
tPSK — 1.1 3 ns
(no deglitch)
Propagation Delay (30

ns deglitch)

(30 ns deglitch) PWD See Figure 4.2 Propagation Delay Timing on page 43. — — 2 ns
|tPLH – tPHL|

tPSK(P-P) — 2.0 4.5 ns
(30 ns deglitch)
tPSK — 1.7 3 ns
(30 ns deglitch)
Propagation Delay
(Si86SLx, low-power tPHL, tPLH See Figure 4.2 Propagation Delay Timing on page 43. 9 14 21 ns
mode)

(Si86SLx, low-power
PWD See Figure 4.2 Propagation Delay Timing on page 43. — — 7 ns
mode)
|tPLH – tPHL|

(Si86SLx, low-power tPSK(P-P) — 2.0 4.5 ns
mode)
(Si86SLx, low-power tPSK — 1.6 6 ns
mode)
Direction Transition
tDIR . 40 64 95 ns
Delay (Si86SQx)
CL = 15 pF
Output Rise Time tr — 2.5 — ns
See Figure 4.2 Propagation Delay Timing on page 43
CL = 15 pF
Output Fall Time tf — 2.5 — ns
See Figure 4.2 Propagation Delay Timing on page 43
Common Mode Transi-

See Figure 4.4 Common-Mode Transient Immunity Test Cir-
ent Immunity
cuit on page 44
Si86Sx (no deglitch) CMTI 100 — — kV/µs
VI = VDD or 0 V
Si86Sx (with 30 ns de-
VCM = ±1500 V 150 — —
glitch)
SMB to Sleep Mode

tSM See Figure 4.3 SMB Timing on page 44 — 19 30 ns
Delay (Si86SMx)
SMB to Wake-Up from

tWU See Figure 4.3 SMB Timing on page 44 — 1400 2100 ns
Sleep Mode
Input power loss to valid

tSD See Figure 4.1 ENABLE Timing Diagram on page 43 — 8.0 12 ns
default output
EN, SMB, MCSB, DIR

IENH, IENL VENx = VIH or VIL — — 45 µA
Input Current
Note:
3. Start-up time is the time period from the application of power to the appearance of valid data at the output. The OTP initialization
time is included in the 300 µs specification.
Figure 4.1. ENABLE Timing Diagram
tPLH tPHL
Figure 4.2. Propagation Delay Timing
Figure 4.3. SMB Timing
Figure 4.4. Common-Mode Transient Immunity Test Circuit
Typical Performance Characteristics
The typical performance characteristics depicted in the following diagrams are for information purposes only. Refer to Electrical
Characteristics tables for actual specification limits. All typical characteristics data is valid for nominal VDD and ambient temperature of
25°C.
12
15.0
10
IDD2 5.0V
12.5
Current (mA)
Current (mA)
8
10.0
IDD2 3.3V IDD2 2.5V
6 IDD2 5.0V
7.5 IDD2 3.3V IDD1 5.0V
IDD2 2.5V 4 IDD1 3.3V
5.0
IDD1 2.5V
2.5 IDD1 2.5V IDD1 3.3V IDD1 5.0V 2
0 20 40 60 80 100 0 20 40 60 80 100
Datarate (Mbps) Datarate (Mbps)
Figure 4.5. Si86S630 Typical Supply Current vs. Data Rate Figure 4.6. Si86S631 Typical Supply Current vs. Data Rate
20 IDD2 5.0V
IDD2 5.0V 15.0
15 12.5
Current (mA)
Current (mA)
IDD2 3.3V
10.0 IDD2 3.3V
10 IDD2 2.5V
IDD2 2.5V 7.5
IDD1 5.0V
5 5.0 IDD1 3.3V
IDD1 2.5V IDD1 3.3V IDD1 5.0V IDD1 2.5V
2.5
0 20 40 60 80 100 0 20 40 60 80 100
Figure 4.7. Si86S6/L/M/40 Typical Supply Current vs. Data Figure 4.8. Si86S6/L/M/41 Typical Supply Current vs. Data
Rate Rate
17.5
12
15.0 IDD2 5.0V
IDD2 5.0V
10 IDD1 5.0V
Current (mA)
Current (mA)
12.5
IDD2 3.3V 8 IDD2 3.3V
10.0
IDD1 3.3V
7.5 IDD2 2.5V 6 IDD2 2.5V
5.0 IDD1 5.0V 4 IDD1 2.5V
IDD1 2.5V IDD1 3.3V

2.5 2
0 20 40 60 80 100 0 20 40 60 80 100
Figure 4.9. Si86SS41 Typical Supply Current vs. Data Rate Figure 4.10. Si86S6/L/M/42 Typical Supply Current vs. Data
Rate
17.5
30 IDD2 5.0V
15.0 IDD1 5.0V
25
IDD2 5.0V
Current (mA)
Current (mA)
IDD2 3.3V 12.5

20 IDD2 3.3V
IDD2 2.5V 10.0 IDD1 3.3V
15
7.5 IDD2 2.5V
10 IDD1 2.5V
IDD1 5.0V 5.0
5
IDD1 2.5V IDD1 3.3V
0 20 40 60 80 100 0 20 40 60 80 100
Figure 4.11. Si86S660 Typical Supply Current vs. Data Rate Figure 4.12. Si86S663 Typical Supply Current vs. Data Rate
13 18
Propagation delay (ns)
Propagation delay (ns)
12
16
11 3.3 V
14 3.3 V
10
5.0 V
12 5.0 V
9
8 10
0 50 100 0 50 100
Temperature ( ᵒC) Temperature ( ᵒC)
Figure 4.13. Si86S6x Propagation Delay vs. Temperature Figure 4.14. Si86SLx Propagation Delay vs. Temperature
Table 4.6. Regulatory Information1
CSA
The Si86Sx is certified under CSA. For more details, see Master Contract Number 232873.
62368-1: Up to 600 VRMS reinforced insulation working voltage; up to 1000 VRMS basic insulation working voltage.
60601-1: Up to 250 VRMS working voltage and 2 MOPP (Means of Patient Protection).
VDE
The Si86Sx is certified under VDE. For more details, see File 5006301.
IEC60747-17: Up to 2121 Vpeak for reinforced insulation working voltage.
62368-1: Up to 600 VRMS reinforced insulation working voltage; up to 1000 VRMS basic insulation working voltage.
UL
The Si86Sx is certified under UL1577 component recognition program. For more details, see File E257455.
Rated up to 6.0 kVRMS, VISO isolation voltage for basic protection.
CQC
The Si86Sx is certified under GB4943.1-2011.
Rated up to 250 VRMS reinforced insulation working voltage at 5000 meters tropical climate.
Note:
1. Regulatory Certifications apply to >2.5 kVRMS rated devices which are production tested to 3.0 kVRMS for 1 sec. Regulatory Cer-
tifications apply to 3.75 kVRMS rated devices which are production tested to 4.5 kVRMS for 1 sec. Regulatory Certifications apply
to 6.0 kVRMS rated devices which are production tested to 7.2 kVRMS for 1 sec. For more information, see Section1. Ordering
Guide.
Table 4.7. Insulation and Safety-Related Specifications
Value
Parameter Symbol Test Condition Unit
WB SOIC-16 NB SOIC-16 QSOP-16
Nominal External Air Gap (Clearance) CLR 8.0 3.9 3.6 mm
Nominal External Tracking (Creepage) CRP 8.0 3.9 3.6 mm
Minimum Internal Gap

DTI 0.036 0.036 0.036 mm
(Internal Clearance)
Tracking Resistance CTI or PTI IEC60112 600 600 600 VRMS
Erosion Depth ED 0.019 0.019 0.031 mm
Test voltage =
Resistance (Input-Output) 1 RIO 1012 1012 1012 Ω
500 V
Capacitance (Input-Output) 1 CIO f = 1 MHz 2.0 2.0 2.0 pF
Input Capacitance 2 CI 4.0 4.0 4.0 pF
Note:
1. To determine resistance and capacitance, the Si86Sx is converted into a 2-terminal device. Pins on Side A are shorted together
to form the first terminal and pins on Side B are shorted together to form the second terminal. The parameters are then measured
between these two terminals.
2. Measured from input pin to ground.
Table 4.8. IEC 60664-1 Ratings
Specification
Parameter Test Conditions
Basic Isolation Group Material Group I I I
Rated Mains Voltages

I-IV I-IV I-IV
< 150 VRMS

I-IV I-III I-III
< 300 VRMS
Installation Classification
I-IV I-II I-II
< 600 VRMS

I-III I I
< 1000 VRMS
Table 4.9. IEC 60747-17 Insulation Characteristics for Si86Sx 1
Characteristic
Maximum Working Insulation

VIOWM 1500 1500 1500 VRMS
Voltage
Method b1
Maximum Repetitive Isolation (VIORM x 1.875 = VPR, 100%

VIORM 2121 630 630 Vpeak
Voltage
Production Test, tm = 1 sec, Partial
Discharge < 5 pC)
Method b1 (VIORM x 1.875 = VPR,

Input to Output Test Voltage VPR 100% Production Test, tm = 1 sec, 3977 1181 1181 Vpeak
Partial Discharge < 5 pC)
Maximum Transient Isolation

VIOTM t = 60 s 8000 4000 4000 Vpeak
Voltage
Maximum Surge Isolation Tested with 10400 Vpeak

VIOSM 8000 8000 8000 Vpeak
Voltage and 1.2 µs/50 µs profile
Tested with 8000 Vpeak

Maximum Impulse Voltage VIOSM 8000 8000 8000 Vpeak
and 1.2 µs/50 µs profile
Pollution Degree DIN VDE 0110 2 2 2
Insulation Resistance RS TAMB = TS, VIO = 500 V >109 >109 >109 Ω
Note:
1. Maintenance of the safety data is ensured by protective circuits. The Si86Sx provides a climate classification of 40/125/21.
Table 4.10. IEC 60747-17 Safety Limiting Values1
Max
Safety Temperature TS 150 150 150 °C
Safety Input, Output, or Supply Refer to θJA in Table 4.11 Thermal

IS 350 339 316 mA
Current
Characteristic on page 50,
Safety Input, Output, or Total
PS VI = 5.5 V, TJ = 150 °C, TA = 25 °C 1925 1865 1738 mW
Power
Note:
1. Maximum value allowed in the event of a failure; also see the thermal derating curve in Figure 4.15 (WB SOIC-16) Thermal
Derating Curve, Dependence of Safety Limiting Current on page 50.
2. The Si86Sx is tested with IDD1 = IDD2 = 5.5 V; TJ = 150ºC; CL = 15 pF, input a 150 Mbps 50% duty cycle square wave.
Table 4.11. Thermal Characteristic
Parameter Symbol WB SOIC-16 NB SOIC-16 QSOP-16 Unit
IC Junction-to-Air Thermal Resistance θJA

70 67 73
IC Junction-to-board Thermal Resistance θJB 35 30 43
IC Junction-to-Case Thermal Resistance θJC 24 20 31 °C/W
Thermal characterization parameter to report the

difference between junction temperature and the
temperature of the board measured at the top ΨJB 33 29 43
surface of the board
900.00 800.00
746
800.00 700.00
769
700.00
600.00 565
Safety -Limiting Values (mA)

600.00
583 500.00
500.00
400.00
400.00 339
350
300.00
300.00
200.00
200.00
100.00 100.00
0.00 0.00
0.00 50.00 100.00 150.00 0.00 50.00 100.00 150.00 200.00
Ambient Temperature ( °C) Ambient Temperature (°C)
VDD = 2.5V VDD = 3.3V VDD = 5.5V VDD = 2.5V VDD = 3.3V VDD = 5.5V
Figure 4.15. (WB SOIC-16) Thermal Derating Curve, Depend- Figure 4.16. (NB SOIC-16) Thermal Derating Curve, Depend-
ence of Safety Limiting Current ence of Safety Limiting Current
800.00
694
700.00
600.00
526
500.00
400.00
316
300.00
200.00
100.00
0.00
0.00 50.00 100.00 150.00 200.00
Ambient Temperature (°C)
VDD = 2.5V VDD = 3.3V VDD = 5.5V
Figure 4.17. (QSOP-16) Thermal Derating Curve, Dependence of Safety Limiting Current
Table 4.12. Absolute Maximum Ratings1
Parameter Symbol Min Max Unit
Storage Temperature TSTG –65 150 °C
Operating Temperature TA –40 125 °C
Junction Temperature TJ — 150 °C
Supply Voltage VDD1, VDD2 –0.5 7.0 V
Supply Voltage Ramp-up VDD1, VDD2 - 1 V/µs
Input Voltage VI –0.5 VDD + 0.5 V
Output Voltage VO –0.5 VDD + 0.5 V
Output Current Drive Channel IO — 10 mA
ESD HBM — 6 kV
ESD CDM — 0.5 kV
IEC 61000-4-2 contact

ESD2 — 8000 V
discharge
Lead Solder Temperature (10 s) — 260 °C
Note:
1. Permanent device damage may occur if the absolute maximum ratings are exceeded. Functional operation should be restricted to
conditions as specified in the operational sections of this data sheet. Exposure to absolute maximum ratings for extended periods
may degrade performance.
2. This test is performed across the isolation barrier with device in a two terminal configuration, with pins on each side shorted
together. Tested per IEC 61000-4-2 contact discharge.
Si86S63x/64x/S4x/Q4x/66x: Multi-Channel Digital Isolators • Pin Descriptions
5. Pin Descriptions
VDD1 1 16 VDD2 VDD1 1 16 VDD2
GND1 2 15 GND2 GND1 2 15 GND2
Isolation Barrier
Isolation Barrier
A1 3
HF
XMTR
HF
RCVR 14 B1 A1 3
HF
XMTR
HF
RCVR 14 B1
A2 4
HF
XMTR
HF
RCVR 13 B2 A2 4
HF
XMTR
HF
RCVR 13 B2
A3 5
HF
XMTR
HF
RCVR 12 B3 A3 5
HF
RCVR
HF
XMTR 12 B3
NC 6 11 NC NC 6 11 NC
NC 7 10 EN2 EN1 7 10 EN2
Si86S630 Si86S631
Figure 5.1. Si86S63x Pinout
Isolation Barrier
Isolation Barrier
A1 3
HF
XMTR
HF
RCVR 14 B1 A1 3
HF
XMTR
HF
RCVR 14 B1
A2 4
HF
XMTR
HF
RCVR 13 B2 A2 4
HF
XMTR
HF
RCVR 13 B2
A3 5
HF
XMTR
HF
RCVR 12 B3 A3 5
HF
XMTR
HF
RCVR 12 B3
A4 6
HF
XMTR
HF
RCVR 11 B4 A4 6
HF
RCVR
HF
XMTR 11 B4
NC 7 10 EN2 EN1 7 10 EN2
Si86S640/L40 Si86S641/L41
VDD1 1 16 VDD2
GND1 2 15 GND2
Isolation Barrier
A1 3
HF
XMTR
HF
RCVR 14 B1
A2 4
HF
XMTR
HF
RCVR 13 B2
A3 5
HF
RCVR
HF
XMTR 12 B3
A4 6
HF
RCVR
HF
XMTR 11 B4
EN1 7 10 EN2
GND1 8 9 GND2
Si86S642/L42
Figure 5.2. Si86S64x/L4x Pinouts
Isolation Barrier
Isolation Barrier
A1 3
HF
XMTR
HF
RCVR 14 B1 A1 3
HF
XMTR
HF
RCVR 14 B1
A2 4
HF
XMTR
HF
RCVR 13 B2 A2 4
HF
XMTR
HF
RCVR 13 B2
A3 5
HF
XMTR
HF
RCVR 12 B3 A3 5
HF
XMTR
HF
RCVR 12 B3
A4 6
HF
XMTR
HF
RCVR 11 B4 A4 6
HF
RCVR
HF
XMTR 11 B4
SMB 7 HF
XMTR
HF
RCVR 10 NC SMB 7 HF
XMTR
HF
RCVR 10 NC
Si86SM40 Si86SM41
VDD1 1 16 VDD2
GND1 2 15 GND2
Isolation Barrier
A1 3
HF
XMTR
HF
RCVR 14 B1
A2 4
HF
XMTR
HF
RCVR 13 B2
A3 5
HF
RCVR
HF
XMTR 12 B3
A4 6
HF
RCVR
HF
XMTR 11 B4
SMB 7 HF
XMTR
HF
RCVR 10 NC
GND1 8 9 GND2
Si86SM42
Figure 5.3. Si86SM4x Pinouts
A1 2
HF
XMTR
HF
RCVR 15 B1 A1 2
HF
XMTR
HF
RCVR 15 B1
Isolation Barrier
Isolation Barrier
A2 3
HF
XMTR
HF
RCVR 14 B2 A2 3
HF
XMTR
HF
RCVR 14 B2
A3 4
HF
XMTR
HF
RCVR 13 B3 A3 4
HF
XMTR
HF
RCVR 13 B3
A4 B4 A4 B4
HF HF HF HF
5 XMTR RCVR 12 5 RCVR XMTR 12
A5 B5 A5 B5
HF HF HF HF
6 XMTR RCVR 11 6 RCVR XMTR 11
B6 B6
HF HF HF HF
A6 7 XMTR RCVR 10 A6 7 RCVR XMTR 10
Si86S660 Si86S663
Figure 5.4. Si86S66x Pinout
Table 5.1. Si86S6x/Lx/Mx Pin Description
Name Type Description
VDD1 Supply Side A power supply
GND1 Ground Side A ground
A1 – A6 Digital I/O Side A digital I/O
EN1/EN2 Digital Input Side A/B active high output enable
SMB Digital Input Sleep mode active high for OPNs Si86SMx
NC - Not connected
GND2 Ground Side B ground
B1 – B6 Digital I/O Side B digital I/O
VDD2 Supply Side B power supply
VDD1 1 16 VDD2
GND1 2 15 GND2
Isolation Barrier
MCSB 3 HF
XMTR
HF
RCVR
14 SCSB
MCLK 4
HF
XMTR
HF
RCVR 13 SCLK
MO 5
XMTR
HF
RCVR
HF
12 SI
MI
HF HF
6 RCVR XMTR 11 SO
NC 7 10 NC
GND1 8 9 GND2
SPI Isolator
Figure 5.5. Si86SS41 Pinout
Table 5.2. Si86SS41 Pinout Description
VDD1 Supply Main side (Side A) power supply pin
GND1 Ground Main side supply ground pin
MCSB Digital Input Main side SPI bus chip select, active low input pin
MCLK Digital Input Main side SPI CLK input pin
MO Digital Input Main side input pin
MI Digital Output Main side output pin
NC — Not connected
GND2 Ground Secondary side supply ground pin
SI Digital Output Secondary side output pin
SO Digital Input Secondary side input pin
SCLK Digital Output Secondary side SPI CLK isolated output pin
SCSB Digital Output Secondary side SPI bus chip select, isolated output pin
VDD2 Supply Secondary side power supply pin
VDD1 1 16 VDD2
EN_A 2 15 EN_B
A1 3
HF
XMTR
HF
RCVR 14 B1
HF HF
RCVR XMTR
Isolation Barrier
B2
HF HF
A2 4 XMTR RCVR 13
HF HF
RCVR XMTR
HF HF
A3 5 XMTR RCVR 12 B3
HF HF
RCVR XMTR
A4 6
HF
XMTR
HF
RCVR 11 B4
HF HF
RCVR XMTR
DIR 7 HF HF
10 ISO_DIR
RCVR XMTR
GND1 8 9 GND2
Custom QSPI Isolator

Figure 5.6. Si86SQ44 Pinout
Table 5.3. Si86SQ44 Pinout Description
VDD1 Supply Main side (Side A) power supply pin
EN_A Digital Input Output enable for side A
Ax Digital I/O I/O pins for side A
DIR Digital Input Input pin, sets channel direction for all channels
GND1 Ground Main side (Side A) supply ground
GND2 Ground Secondary side (Side B) supply ground
ISO_DIR Digital Output Isolated DIR signal output
Bx Digital I/O I/O pins for side B
EN_B Digital Input Output enable for side B
VDD2 Supply Secondary side (Side B) power supply pin
Si86S63x/64x/S4x/Q4x/66x: Multi-Channel Digital Isolators • Package Outline
6. Package Outline
6.1 Package Outline (WB SOIC-16)
The figure below illustrates the package details for the the Si86Sx digital isolator in a 16-pin wide-body SOIC package. The table lists
the values for the dimensions shown in the illustration.
Figure 6.1. WB SOIC-16
Table 6.1. WB SOIC-16 Package Diagram Dimensions
Dimension Min Max
A — 2.65
A1 0.10 0.30
A2 2.05 —
b 0.31 0.51
c 0.20 0.33
D 10.30 BSC
E 10.30 BSC
E1 7.50 BSC
e 1.27 BSC
L 0.40 1.27
h 0.25 0.75
Dimension Min Max
θ 0° 8°
aaa — 0.10
bbb — 0.33
ccc — 0.10
ddd — 0.25
eee — 0.10
fff — 0.20
Note:
1. All dimensions shown are in millimeters (mm) unless otherwise noted.
2. Dimensioning and Tolerancing per ANSI Y14.5M-1994.
3. This drawing conforms to JEDEC Outline MS-013, Variation AA.
4. Recommended reflow profile per JEDEC J-STD-020 specification for small body, lead-free components.
6.2 Package Outline (NB SOIC-16)
The figure below illustrates the package details for the Si86Sx in a 16-pin narrow-body SOIC package. The table lists the values for the
dimensions shown in the illustration.
Figure 6.2. NB SOIC-16
Table 6.2. NB SOIC-16 Package Diagram Dimensions
Dimension Min Max
A — 1.75
A1 0.10 0.25
A2 1.25 —
b 0.31 0.51
c 0.17 0.25
D 9.90 BSC
E 6.00 BSC
E1 3.90 BSC
e 1.27 BSC
L 0.40 1.27
L2 0.25 BSC
h 0.25 0.50
θ 0° 8°
aaa 0.10
Dimension Min Max
bbb 0.20
ccc 0.10
ddd 0.25
Note:
3. This drawing conforms to the JEDEC Solid State Outline MS-012, Variation AC.
4. Recommended card reflow profile is per the JEDEC/IPC J-STD-020 specification for Small Body Components.
6.3 Package Outline (QSOP-16)
The figure below illustrates the package details for the Si86Sx in a 16-pin QSOP package. The table lists the values for the dimensions
shown in the illustration.
Figure 6.3. QSOP-16
Table 6.3. QSOP-16 Package Diagram Dimensions1, 2, 3, 4
Dimension Min Max
A — 1.75
A1 0.10 0.25
A2 1.25 —
b 0.20 0.30
c 0.17 0.25
D 4.89 BSC
E 6.00 BSC
E1 3.90 BSC
e 0.635 BSC
L 0.40 1.27
L2 0.25 BSC
h 0.25 0.50
Dimension Min Max
θ 0° 8°
aaa 0.10
bbb 0.20
ccc 0.10
ddd 0.25
Note:
3. This drawing conforms to the JEDEC Solid State Outline MO-137, Variation AB.
4. Recommended card reflow profile is per the JEDEC/IPC J-STD-020 specification for Small Body Components.
Si86S63x/64x/S4x/Q4x/66x: Multi-Channel Digital Isolators • Land Pattern
7. Land Pattern
7.1 Land Pattern (WB SOIC-16)
The figure below illustrates the recommended land pattern details for the Si86Sx in a 16-pin wide-body SOIC package. The table lists
Figure 7.1. WB SOIC-16 PCB Land Pattern
Table 7.1. WB SOIC-16 Land Pattern Dimensions
Dimension Feature (mm)
C1 Pad Column Spacing 9.40
E Pad Row Pitch 1.27
X1 Pad Width 0.60
Y1 Pad Length 1.90
Note:
1. This Land Pattern Design is based on IPC-7351 pattern SOIC127P1032X265-16AN for Density Level B (Median Land Protru-
sion).
2. All feature sizes shown are at Maximum Material Condition (MMC) and a card fabrication tolerance of 0.05 mm is assumed.
7.2 Land Pattern (NB SOIC-16)
The figure below illustrates the recommended land pattern details for the Si86Sx in a 16-pin narrow-body SOIC package. The table lists
Figure 7.2. NB SOIC-16 PCB Land Pattern
Table 7.2. NB SOIC-16 Land Pattern Dimensions1, 2
X1 Pad Width 0.60
Y1 Pad Length 1.55
Note:
1. This Land Pattern Design is based on IPC-7351 pattern SOIC127P600X165-16N for Density Level B (Median Land Protrusion).
7.3 Land Pattern (QSOP-16)
The figure below illustrates the recommended land pattern details for the Si86Sx in a 16-pin QSOP package. The table lists the values
for the dimensions shown in the illustration.
Figure 7.3. QSOP-16 PCB Land Pattern
Table 7.3. QSOP-16 Land Pattern Dimensions1, 2
X1 Pad Width 0.40
Y1 Pad Length 1.55
Note:
1. This Land Pattern Design is based on IPC-7351 pattern SOP63P602X173-16N for Density Level B (Median Land Protrusion).
Si86S63x/64x/S4x/Q4x/66x: Multi-Channel Digital Isolators • Top Marking
8. Top Marking
8.1 Top Marking (WB SOIC-16)
Figure 8.1. WB SOIC-16 Top Marking
Table 8.1. WB SOIC-16 Top Marking Explanation
Line 1 marking: Base part number ordering options Si86S = Isolator product series
(See 1. Ordering Guide for more information) F = product family
6 = Industry standard footprint
L = Low power mode
M = Sleep mode
S = SPI compatible
Q = Custom QSPI implementation
X = Total # of channels
Y = Total # of reverse channels (right to left)
U = Default and deglitch option
B = Output default low, no deglitch
E = Output default high, no deglitch
F = Output default low, 30 ns deglitch
H = Output default high, 30 ns deglitch
V = Isolation rating
B = 2.5 kVRMS
C = 3.75 kVRMS
E = 6.0 kVRMS
Line 2 Marking: YY Year of manufacturing at assembly house
WW Work week of manufacturing at assembly house
TTTTTT Manufacturing code from assembly house purchase order form
Line 3 marking: Circle = 1.5 mm Diameter (Center Justified) “e4” Pb-Free Symbol
CC Country of Origin ISO Code Abbreviation
8.2 Top Marking (NB SOIC-16)
S i 8 6 S F X Y U V
e3 Y Y W W T T T T T T
Figure 8.2. NB SOIC-16 Top Marking
Table 8.2. NB SOIC-16 Top Marking Explanation
Line 1 marking: Base part number ordering options Si86S = Isolator product series
L = Low power mode
M = Sleep mode
S = SPI compatible
B = 2.5 kVRMS
C = 3.75 kVRMS
E = 6.0 kVRMS
Line 2 Marking: YY Year of manufacturing at assembly house
TTTTTT Manufacturing code from assembly house purchase order form
Circle = 1.3 mm Diameter “e3” Pb-Free Symbol
8.3 Top Marking (QSOP-16)
S i S F X Y U V
T T T T T T
Y Y W W
Figure 8.3. QSOP-16 Top Marking
Table 8.3. QSOP-16 Top Marking Explanation
Line 1 marking: Base part number ordering options SiS = Si86S Isolator product series
L = Low power mode
M = Sleep mode
S = SPI compatible
B = 2.5 kVRMS
C = 3.75 kVRMS
E = 6.0 kVRMS
Line 2 marking: TTTTTT Manufacturing code from assembly house purchase order form
Line 3 marking: YY Year of manufacturing at assembly house
Si86S63x/64x/S4x/Q4x/66x: Multi-Channel Digital Isolators • Revision History
9. Revision History
Revision 0.2
October, 2021
• Added 4-channel and 6-channel OPNs to 1. Ordering Guide.
• Added spec tables for IDD1/2 for new OPNs.
Revision 0.1
May, 2020
• Initial release.
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Si86S63x/64x/S4x/Q4x/66x: Multi-Channel

Robust, High Speed Low Power Multi-Channel Digital Isolators

• Isolated switch mode supplies • Wide temperature range

3. Device Operation and System Overview . . . . . . . . . . . . . . . . . . . . . 8

Table 1.1. Ordering Guide for 3-Channel Digital Isolators1, 2, 3

Number of Number of Deglitch Default Isolation

Si86S630BC-IS1 3 0 0 Low 3.75 –40 to 125 °C NB SOIC-16

Si86S630BE-IS2 3 0 0 Low 6.0 –40 to 125 °C WB SOIC-16

Si86S630EC-IS1 3 0 0 High 3.75 –40 to 125 °C NB SOIC-16

Si86S630EE-IS2 3 0 0 High 6.0 –40 to 125 °C WB SOIC-16

Si86S631BC-IS1 2 1 0 Low 3.75 –40 to 125 °C NB SOIC-16

Si86S631BE-IS2 2 1 0 Low 6.0 –40 to 125 °C WB SOIC-16

Si86S631EC-IS1 2 1 0 High 3.75 –40 to 125 °C NB SOIC-16

Si86S631EE-IS2 2 1 0 High 6.0 –40 to 125 °C WB SOIC-16

Table 1.2. Ordering Guide for 4-Channel Digital Isolators1, 2, 3

Number of Number of Deglitch Default Isolation

Si86S640BC-IS1 4 0 0 Low 3.75 –40 to 125 °C NB SOIC-16

Si86S640BB-IU 4 0 0 Low 2.5 –40 to 125 °C QSOP-16

Si86S640BE-IS2 4 0 0 Low 6.0 –40 to 125 °C WB SOIC-16

Si86S640EC-IS1 4 0 0 High 3.75 –40 to 125 °C NB SOIC-16

Si86S640EB-IU 4 0 0 High 2.5 –40 to 125 °C QSOP-16

Si86S640EE-IS2 4 0 0 High 6.0 –40 to 125 °C WB SOIC-16

Si86S641BC-IS1 3 1 0 Low 3.75 –40 to 125 °C NB SOIC-16

Si86S641BB-IU 3 1 0 Low 2.5 –40 to 125 °C QSOP-16

Si86S641BE-IS2 3 1 0 Low 6.0 –40 to 125 °C WB SOIC-16

Si86S641EC-IS1 3 1 0 High 3.75 –40 to 125 °C NB SOIC-16

Si86S641EB-IU 3 1 0 High 2.5 –40 to 125 °C QSOP-16

Si86S641EE-IS2 3 1 0 High 6.0 –40 to 125 °C WB SOIC-16

Si86S642BC-IS1 2 2 0 Low 3.75 –40 to 125 °C NB SOIC-16

Si86S642BB-IU 2 2 0 Low 2.5 –40 to 125 °C QSOP-16

Si86S642BE-IS2 2 2 0 Low 6.0 –40 to 125 °C WB SOIC-16

Si86S642EC-IS1 2 2 0 High 3.75 –40 to 125 °C NB SOIC-16

Number of Number of Deglitch Default Isolation

Si86S642EB-IU 2 2 0 High 2.5 –40 to 125 °C QSOP-16

Si86S642EE-IS2 2 2 0 High 6.0 –40 to 125 °C WB SOIC-16

Si86S640FC-IS1 4 0 30 Low 3.75 –40 to 125 °C NB SOIC-16

Si86S640FE-IS2 4 0 30 Low 6.0 –40 to 125 °C WB SOIC-16

Si86S640HC-IS1 4 0 30 High 3.75 –40 to 125 °C NB SOIC-16

Si86S640HE-IS2 4 0 30 High 6.0 –40 to 125 °C WB SOIC-16

Si86S641FC-IS1 3 1 30 Low 3.75 –40 to 125 °C NB SOIC-16

Si86S641FE-IS2 3 1 30 Low 6.0 –40 to 125 °C WB SOIC-16

Si86S641HC-IS1 3 1 30 High 3.75 –40 to 125 °C NB SOIC-16

Si86S641HE-IS2 3 1 30 High 6.0 –40 to 125 °C WB SOIC-16

Si86S642FC-IS1 2 2 30 Low 3.75 –40 to 125 °C NB SOIC-16

Si86S642FE-IS2 2 2 30 Low 6.0 –40 to 125 °C WB SOIC-16

Si86S642HC-IS1 2 2 30 High 3.75 –40 to 125 °C NB SOIC-16

Si86S642HE-IS2 2 2 30 High 6.0 –40 to 125 °C WB SOIC-16

Low Power Mode

Si86SL40BC-IS1 4 0 0 Low 3.75 –40 to 125 °C NB SOIC-16

Si86SL40BE-IS2 4 0 0 Low 6.0 –40 to 125 °C WB SOIC-16

Si86SL40EC-IS1 4 0 0 High 3.75 –40 to 125 °C NB SOIC-16

Si86SL40EE-IS2 4 0 0 High 6.0 –40 to 125 °C WB SOIC-16

Si86SL41BC-IS1 3 1 0 Low 3.75 –40 to 125 °C NB SOIC-16

Si86SL41BE-IS2 3 1 0 Low 6.0 –40 to 125 °C WB SOIC-16

Si86SL41EC-IS1 3 1 0 High 3.75 –40 to 125 °C NB SOIC-16

Si86SL41EE-IS2 3 1 0 High 6.0 –40 to 125 °C WB SOIC-16

Si86SL42BC-IS1 2 2 0 Low 3.75 –40 to 125 °C NB SOIC-16

Si86SL42BE-IS2 2 2 0 Low 6.0 –40 to 125 °C WB SOIC-16

Si86SL42EC-IS1 2 2 0 High 3.75 –40 to 125 °C NB SOIC-16