Chapter: Semiconductor 2020

1. Which of the following gives a reversible operation?

(1) (2) (3) (4)

2. In the figure, potential between A and B is:

(1) 5V (2) 10 V (3) Zero (d) 15 V

3. In the given circuit, value of Y is:

(1) will not execute (2) 0

(3) toggles between 0 and 1 (4) 1

4. Both the diodes used in the circuit shown are assumed to be ideal and have negligible resistance
when these are forward biased. Built in potential in each diode is 0.7 V. For the input voltages
shown in the figure, the voltage (in Volts) at point A is __________.

5. The current i in the network is:

(1) 0A (2) 06A (3) 0.3A (4) 0.2A

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6. Two identical capacitors A and B, charged to the same potential 5V are connected in two
different circuits as shown below at time t = 0. If the charge on capacitors A and B at time
t = CR is QA and QB respectively, then (Here e is the base of natural logarithm)

VC
(1) QA = VC,QB = (2) QA = VC,QB = CV
e
VC CV
(3) QA = VC,QB = CV (4) QA = ,QB =
e 2

7. The circuit shown below is working as a 8 V dc regulated voltage source. When 12 V is used as
input, the power dissipated (in mW) in each diode is; (considering both zener diodes are
identical) _________.

8. In the following digital circuit, what will be the output at 'Z', when the input (A, B) are (1,0),(0,0),
(1,1), (0,1):

(1) 1, 0, 1, 1 (2) 0, 1, 0, 0 (3) 0, 0, 1, 0 (4) 1, 1, 0, 1

9. When a diode is forward biased, it has a voltage drop of 0.5 V. The safe limit of current through
the diode is 10 mA. If a battery of emf 1.5 V is used in the circuit, the value of minimum
resistance to be connected in series with the diode so that the current does not exceed the
safe limit is:
(1) 100  (2) 50  (3) 300  (4)200 

10. If a semiconductor photodiode can detect a photon with a maximum wavelength of 400 nm,
then its band gap energy is: Planck's constant h = 6.63 × 10–34 J.s. Speed of light c = 3 × 108 m/s
(1) 2.0 eV (2) 1.5 eV (3) 3.1 eV (4) 1.1 eV

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11. Take the breakdown voltage of the zener diode used in the given circuit as 6V. For the input
voltage shown in figure below, the time variation of the output voltage is : (Graphs drawn are
schematic and not to scale)

(1) (2)

(3) (4)

12. Identify the operation performed by the circuit given below:

(1) AND (2) NAND (3) OR (4) NOT

13. With increasing biasing voltage of a photodiode, the photocurrent magnitude:

(1) increases initially and saturates finally
(2) increases initially and after attaining certain value, it decreases
(3) increases linearly
(4) remains constant

14. Two Zener diodes (A and B) having breakdown voltages of 6V and 4V respectively, are connected
as shown in a the circuit below. The output voltage V0 variation with input voltage linearly
increasing with time, is given by:
(Vinput = 0V at t = 0) (figures are qualitative)

(1) (2) (3) (4)

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15. Identify the correct output signal Y in the given combination of gates (as shown) for the given
inputs A and B.

(1) (2)

(3) (4)

Answer Key
1. (2) 2. (2) 3. (2) 4. 12 5. (3) 6. (1) 7. 12
8. (3) 9. (1) 10. (3) 11. (2) 12. (1) 13. (1) 14. (4)
15. (3)

Chapter: Semiconductor 2021

1. In connection with the circuit drawn below, the value of current flowing through 2 k resistor
is ________ × 10–4 A.

2. The logic circuit shown above is equivalent to :

(1) (2) (3) (4)

3. Zener breakdown occurs in a p-n junction having p and n both :

(1) lightly doped and have wide depletion layer.
(2) heavily doped and have narrow depletion layer.
(3) lightly doped and have narrow depletion layer.
(4) heavily doped and have wide depletion layer.

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4. A 5V battery is connected across the points X and Y. Assume D1 and D2 to be normal silicon
diodes. Find the current supplied by the battery if the +ve terminal of the battery is connected
to point X.

(1) ~ 0.5 A (2) ~ 1.5 A (3) ~ 0.86 A (4) ~ 0.43 A

5. For extrinsic semiconductors; when doping level is increased:

(1) Fermi-level of p-type semiconductor will go upward and Fermi-level of n-type
semiconductors will go downward.
(2) Fermi-level of p-type semiconductors will go downward and Fermi-level of n-type
semiconductor will go upward.
(3) Fermi-level of both p-type and n-type semiconductors will go upward for T > TF K and
downward for T < TF K, where TF is Fermi temperature.
(4) Fermi-level of p and n-type semiconductors will not be affected.

6. The truth table for the following logic circuit is :

(1) (2) (3) (4)

7. Match List I with List II.

List I List II
(a) Rectifier (i) Used either for stepping up or stepping down the a.c. voltage
(b) Stabilizer (ii) Used to convert a.c. voltage into d.c. voltage
(c) Transformer (iii) Used to remove any ripple in the rectified output voltage
(d) Filter (iv) Used for constant output voltage even when the input voltage or load
current change
Choose the correct answer from the options given below :
(1) (a)–(ii), (b)–(iv), (c)–(i), (d)–(iii)
(2) (a)–(iii), (b)–(iv), (c)–(i), (d)–(ii)
(3) (a)–(ii), (b)–(i), (c)–(iv), (d)–(iii)
(4) (a)–(ii), (b)–(i), (c)–(iii), (d)–(iv)

8. LED is constructed from Ga-As-P semiconducting material. The energy gap of this LED is 1.9 eV.
Calculate the wavelength of light emitted and its colour.
[h = 6.63 × 10–34 Js and c = 3 × 108 ms–1]
(1) 1046 nm and red colour (2) 654 nm and orange colour
(3) 1046 nm and blue colour (4) 654 nm and red colour

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9. The circuit contains two diodes each with a forward resistance of 50  and with infinite reverse
resistance. If the battery voltage is 6 V, the current through the 120  resistance is_ mA.

10. Draw the output signal Y in the given combination of gates :-

(1) (2)

(3) (4)

11. The zener diode has a Vz = 30 V. The current passing through the diode for the following circuit
is ......... mA.

12. The value of power dissipated across the Zener diode (Vz = 15 V) connected in the circuit as
shown in the figure is x × 10–1 watt.

The value of x, to the nearest integer, is ________.

13. In the logic circuit shown in the figure, if input A and B are 0 to 1 respectively, the output at Y
would be 'x'. The value of x is _______.

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14. The following logic gate is equivalent to :

(1) NOR Gate (2) OR Gate (3) AND Gate (4) NAND Gate

15. The output of the given combination gates represents :

(1) XOR Gate (2) NAND Gate (3) AND Gate (4) NOR Gate

16. Which one of the following will be the output of the given circuit ?

(1) NOR Gate (2) NAND Gate (3) AND Gate (4) XOR Gate

17. For the circuit shown below, calculate the value of Iz :

(1) 25 mA (2) 0.15 A (3) 0.1 A (4) 0.05 A

18. A zener diode having zener voltage 8 V and power dissipation rating of 0.5 W is connected
across a potential divider arranged with maximum potential drop across zener diode is as shown
in the diagram. The value of protective resistance Rp is ............

19. In a given circuit diagram, a 5 V zener diode along with a series resistance is connected across
a 50 V power supply. The minimum value of the resistance required, if the maximum zener
current is 90 mA will be _____ .

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20. Identify the logic operation carried out.

(1) OR (2) AND (3) NOR (4) NAND

21. In a semiconductor, the number density of intrinsic charge carriers at 27°C is 1.5 × 1016 / m3. If
the semiconductor is doped with impurity atom, the hole density increases to 4.5 × 1022 / m3.
The electron density in the doped semiconductor is _______ × 109/m3.

22. Find the truth table for the function Y of A and B represented in the following figure.

(1) (2) (3) (4)

23. Consider a situation in which reverse biased current of a particular P-N junction increases when
it is exposed to a light of wavelength  621 nm. During this process, enhancement in carrier
concentration takes place due to generation of hole-electron pairs. The value of band gap is
nearly.
(1) 2 eV (2) 4 eV (3) 1 eV (4) 0.5 eV

24. Identify the logic operation carried out by the given circuit :-

(1) OR (2) AND (3) NOR (4) NAND

25. Statement-I : By doping silicon semiconductor with pentavalent material, the electrons density
increases.
Statement-II : The n-type semiconductor has net negative charge.
In the light of the above statements, choose the most appropriate answer from the options
given below :
(1) Statement-I is true but Statement-II is false.
(2) Statement-I is false but Statement-II is true.
(3) Both Statement-I and Statement-II are true.
(4) Both Statement-I and Statement-II are false.

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26. Four NOR gates are connected as shown in figure. The truth table for the given figure is :

(1) (2) (3) (4)

27. For the given circuit, the power across Zener diode is ............ mW.

28. A zener diode of power rating 2W is to be used as a voltage regulator. If the zener diode has a
breakdown of 10 V and it has to regulate voltage fluctuated between 6 V and 14 V, the value of
Rs for safe operation should be _______ .

29. In the following logic circuit the sequence of the inputs A, B are (0, 0), (0,1), (1, 0) and (1, 1). The
output Y for this sequence will be :

(1) 1, 0, 1, 0 (2) 0, 1, 0, 1 (3) 1, 1, 1, 0 (4) 0, 0, 1, 1

30. Choose the correct waveform that can represent the voltage across R
of the following circuit, assuming the diode is ideal one:

(1) (2)

(3) (4)

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31. Statement–I : To get a steady dc output from the pulsating voltage received from a full wave
rectifier we can connect a capacitor across the output parallel to the load RL.
Statement–II : To get a steady dc output from the pulsating voltage received from a full wave
rectifier we can connect an inductor in series with RL.
In the light of the above statements, choose the most appropriate answer from the options
given below :
(1) Statement I is true but Statement II is false
(2) Statement I is false but Statement II is true
(3) Both Statement I and Statement II are false
(4) Both Statement I and Statement II are true

32. In the given figure, each diode has a forward bias resistance of 30 and infinite resistance in
reverse bias. The current I1 will be :

(1) 3.75 A (2) 2.35 A (3) 2 A (4) 2.73 A

Answer Key
1. 25 2. (4) 3. (2) 4. (4) 5. (2) 6. (2) 7. (1)
8. (4) 9. 20 10. (4) 11. 9 12. 5 13. 0 14. (1)
15. (2) 16. (4) 17. (1) 18. 192 19. 500 20. (2) 21. 5
22. (2) 23. (1) 24. (3) 25. (1) 26. (4) 27. 120 28. 20
29. (3) 30. (3) 31. (4) 32. (3)

Chapter: Semiconductor 2022

1. In the circuit, the logical value of A = 1 or B = 1 when potential a A or B is 5V and the logical
value of A = 0 or B = 0 when potential at A or B is 0 V.

The truth table of the given circuit will be:

A B Y A B Y A B Y A B Y
0 0 0 0 0 0 0 0 0 0 0 1
(1) 1 0 0 (2) 1 0 1 (3) 1 0 0 (4) 1 0 1
0 1 0 0 1 1 0 1 0 0 1 1
1 1 1 1 1 1 1 1 0 1 1 0

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2. Two ideal diodes are connected in the network as shown in figure. The equivalent resistance
between A and B is _____.

3. In the circuit shown, maximum zener diode current will be ____mA

4. A logic gate circuit has two input A and B and Y. The voltage waveforms of A, B and Y are shown
below

The logic gate circuit is

(1) AND gate (2) OR gate (3) NOR gate (4) NAND gate

5. Identify the solar cell characteristics from the following options:

(1) (2) (3) (4)

6. If the potential barrier across a p-n junction is 0.6 V. Then the electric field intensity, in the
depletion region having the width of 6  10–6m, will be _____ 105 N/C.

7. A 8 V Zener diode along with a series resistance R is connected across a 20 V supply (as shown
in the figure). If the maximum Zener current is 25 mA, then the minimum value of R will
be _____.

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8. In the given circuit-the value of current IL will be_______mA.

9. The photodiode is used to detect the optical signals. These diodes are preferably operated in
revere biased mode because.
(1) fractional change in majority carriers produce higher forward bias current
(2) fractional change in majority carriers produce higher reverse bias current
(3) fractional change in minority carriers produce higher forward bias current
(4) fractional change in minority carriers produce higher reverse bias current

10. Identify the logic operation performed by the given circuit:

(1) AND gate (2) OR gate (3) NOR gate (4) NAND gate

11. The I-V characteristics of a p-n junction diode in forward bias is

shown in the figure. The ratio of dynamic resistance,
corresponding to forward bias voltages of 2V and 4V respectively,
is :

(1) 1 : 2 (2) 5 : 1
(3) 1 : 40 (4) 20 : 1

12. As per the given circuit, the value of current through the battery will be______A.

13. Identify the correct Logic Gate for the following output (Y) of two inputs A and B.

(1) (2)

(3) (4)

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14. The cut-off voltage of the diodes (shown in figure) in forward bias is 0.6 V. The current through
the resister of 40  is_________ mA.

15. For using a multimeter to identify diode from electrical components. Choose the correct
statement out of the following about the diode :
(1) It is two terminal device which conducts current in both directions.
(2) It is two terminal device which conducts current in one direction only
(3) It does not conduct current gives an initial deflection which decays to zero.
(4) It is three terminal device which conducts current in one direction only between central
terminal and either of the remaining two terminals

16. In the given circuit the input voltage Vin is shown in figure. The cut-in voltage of p-n junction
diode (D1 or D2) is 0.6 V. Which of the following output voltage (V0) waveform across the diode
is correct ?

(1) (2) (3) (4)

17. A Zener of breakdown voltage VZ = 8V and maximum zener current, IZM = 10 mA is subjected to
an input voltage Vi = 10V with series resistance R = 100 . In the given circuit RL represents the
variable load resistance. The ratio of maximum and minimum value of RL is_______

18. A potential barrier of 0.4 exists across a p-n junction. As electron enters the junction from the
n-side with a speed of 6.0 × 105 ms–1. The speed with which electron enters the p side will be
x
 105 ms−1 the value of x is_______.
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(Given mass of electron = 9 × 10–31 kg, charge on electron = 1.6 × 10–19 C.)
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 Answer key
1. (1) 2. 25 3. 9 4. (1) 5. (2) 6. 1 7. 480
8. 5 9. (4) 10. (1) 11. (2) 12. (1) 13. (2) 14. 4
15. (2) 16. (4) 17. 2 18. 14

Chapter: Semiconductor 2023

1. Given below are two statements: one is labelled as Assertion A and the other is labelled as
Reason R
Assertion A: Photodiodes are preferably operated in reverse bias condition for light intensity
measurement.
Reason R: The current in the forward bias is more than the current in the reverse bias
for a p – n junction diode.
In the light of the above statement, choose the correct answer from the options given below:
(1) A is false but R is true
(2) Both A and R are true but R is NOT the correct explanation of A
(3) A is true but R is false
(4) Both A and R are true and R is the correct explanation of A

2. The logic gate equivalent to the given circuit diagram is:

(1) OR (2) NAND (3) NOR (4) AND

3. Given below are two statements : one is labelled as Assertion A and the other is labelled as
Reason R
Assertion A: Photodiodes are used in forward bias usually for measuring the light
intensity.
Reason R: For a p-n junction diode, at applied voltage V the current in the forward bias is
more than the current in the reverse bias for |VZ| > ± V  |V0| where V0 is the threshold voltage
and VZ is the breakdown voltage.
In the light of the above statements, choose the correct answer from the options given below:
(1) A is true but R is false
(2) Both A and R are true and R is correct explanation A
(3) Both A and R are true but R is NOT the correct explanation A
(4) A is false but R is true
4. Statement I : When a Si sample is doped with Boron, it becomes P type and when doped by
Arsenic it becomes N-type semi-conductor such that P-type has excess holes and N-type has
excess electrons.
Statement II : When such P-type and N-type semi-conductors, are fused to make a junction, a
current will automatically flow which can be detected with an externally connected ammeter.
In the light of above statements, choose the most appropriate answer from the options given
below.
Options:
(1) Both Statement I and statement II are incorrect
(2) Statement I is incorrect but statement II is correct
(3) Both Statement I and statement II are correct
(4) Statement I is correct but statement II is incorrect
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5. For the given logic gates combination, the correct truth table will be

(1) (2) (3) (4)

6. The output waveform of the given logical circuit for the following inputs A and B as shown
below, is:

(1) (2)

(3) (4)

7. The output Y for the input A and B of circuit is given by:

Truth table of the shown circuit is:

(1) (2) (3) (4)

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8. The effect of increase in temperature on the number of electrons in conduction band (ne) and
resistance of a semiconductor will be as:
(1) Both ne and resistance decrease
(2) Both ne and resistance increase.
(3) ne increase, resistance decrease.
(4) ne decrease, resistance increase.

10. Match the List I with List II

List I List II
(A) Intrinsic Semiconductor (I) Fermi-level near conduction band
(B) n-type semiconductor (II) Fermi-level at middle
(C) p-type semiconductor (III) Fermi-level near valence band
(D) Metals (IV) Fermi-level inside conduction band
Choose the correct answer from the options given below:
(1) (A) → I, (B) → II, (C) → III, (D) → IV
(2) (A) → II, (B) → I, (C) → III, (D) → IV
(3) (A) → II, (B) → III, (C) → I, (D) → IV
(4) (A) → III, (B) → I, (C) → II, (D) → IV

11. Choose the correct statement about Zener diode:

(1) It works as a voltage regulator in reverse bias and behaves like simple pn junction diode in
forward bias.
(2) It works as a voltage regulator in both forward and reverse bias.
(3) It works as a voltage regulator only in forward bias.
(4) It works as a voltage regulator in forward bias and behaves like simple pn junction diode in
reverse bias.

Answer Key

1. (2) 2. (2) 3. (4) 4. (4) 5. (2) 6. (4) 7. (4)

8. (3) 10. (3) 11. (1)

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