CLA50E1200HB

High Efficiency Thyristor VRRM = 1200 V

I TAV = 50 A
VT = 1.27 V

Single Thyristor

Part number

CLA50E1200HB

Backside: anode

2 1

Features / Advantages: Applications: Package: TO-247

● Thyristor for line frequency ● Line rectifying 50/60 Hz ● Industry standard outline
● Planar passivated chip ● Softstart AC motor control ● RoHS compliant
● Long-term stability ● DC Motor control ● Epoxy meets UL 94V-0
● Power converter
● AC power control
● Lighting and temperature control

Terms and Conditions of Usage

The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20150827h

© 2015 IXYS all rights reserved

 CLA50E1200HB

Thyristor Ratings
Symbol Definition Conditions min. typ. max. Unit
VRSM/DSM max. non-repetitive reverse/forward blocking voltage TVJ = 25°C 1300 V
VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 1200 V
I R/D reverse current, drain current VR/D = 1200 V TVJ = 25°C 50 µA
VR/D = 1200 V TVJ = 125°C 4 mA
VT forward voltage drop IT = 50 A TVJ = 25°C 1.32 V
I T = 100 A 1.60 V
IT = 50 A TVJ = 125 °C 1.27 V
I T = 100 A 1.65 V
I TAV average forward current TC = 125 °C T VJ = 150 °C 50 A
I T(RMS) RMS forward current 180° sine 79 A
VT0 threshold voltage TVJ = 150 °C 0.88 V
for power loss calculation only
rT slope resistance 7.7 mΩ
R thJC thermal resistance junction to case 0.25 K/W
RthCH thermal resistance case to heatsink 0.25 K/W
Ptot total power dissipation TC = 25°C 500 W
I TSM max. forward surge current t = 10 ms; (50 Hz), sine TVJ = 45°C 650 A
t = 8,3 ms; (60 Hz), sine VR = 0 V 700 A
t = 10 ms; (50 Hz), sine TVJ = 150 °C 555 A
t = 8,3 ms; (60 Hz), sine VR = 0 V 595 A
I²t value for fusing t = 10 ms; (50 Hz), sine TVJ = 45°C 2.12 kA²s
t = 8,3 ms; (60 Hz), sine VR = 0 V 2.04 kA²s
t = 10 ms; (50 Hz), sine TVJ = 150 °C 1.54 kA²s
t = 8,3 ms; (60 Hz), sine VR = 0 V 1.48 kA²s
CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C 25 pF
PGM max. gate power dissipation t P = 30 µs T C = 150 °C 10 W
t P = 300 µs 5 W
PGAV average gate power dissipation 0.5 W
(di/dt) cr critical rate of rise of current TVJ = 150 °C; f = 50 Hz repetitive, IT = 150 A 150 A/µs
t P = 200 µs; di G /dt = 0.3 A/µs;
IG = 0.3 A; V = ⅔ VDRM non-repet., I T = 50 A 500 A/µs
(dv/dt)cr critical rate of rise of voltage V = ⅔ VDRM TVJ = 150°C 1000 V/µs
R GK = ∞; method 1 (linear voltage rise)
VGT gate trigger voltage VD = 6 V TVJ = 25 °C 1.5 V
TVJ = -40 °C 1.6 V
I GT gate trigger current VD = 6 V TVJ = 25 °C 50 mA
TVJ = -40 °C 80 mA
VGD gate non-trigger voltage VD = ⅔ VDRM TVJ = 150°C 0.2 V
I GD gate non-trigger current 3 mA
IL latching current tp = 10 µs TVJ = 25 °C 125 mA
IG = 0.3 A; di G /dt = 0.3 A/µs
IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 100 mA
t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs
IG = 0.3 A; di G /dt = 0.3 A/µs
tq turn-off time VR = 100 V; I T = 50 A; V = ⅔ VDRM TVJ =125 °C 200 µs
di/dt = 10 A/µs dv/dt = 20 V/µs t p = 200 µs

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20150827h

© 2015 IXYS all rights reserved

 CLA50E1200HB

Package TO-247 Ratings

Symbol Definition Conditions min. typ. max. Unit
I RMS RMS current per terminal 70 A
TVJ virtual junction temperature -40 150 °C
T op operation temperature -40 125 °C
Tstg storage temperature -40 150 °C
Weight 6 g
MD mounting torque 0.8 1.2 Nm
FC mounting force with clip 20 120 N

Product Marking Part description

C = Thyristor (SCR)
L = High Efficiency Thyristor
A = (up to 1200V)
50 = Current Rating [A]
E = Single Thyristor
1200 = Reverse Voltage [V]
Logo IXYS HB = TO-247AD (3)
Part No. XXXXXXXXX
Assembly Line Zyyww
abcd
Assembly Code

Date Code

Ordering Ordering Number Marking on Product Delivery Mode Quantity Code No.
Standard CLA50E1200HB CLA50E1200HB Tube 30 503748

Similar Part Package Voltage class

CLA50E1200TC TO-268AA (D3Pak) (2) 1200

Equivalent Circuits for Simulation * on die level T VJ = 150 °C

I V0 R0 Thyristor

V 0 max threshold voltage 0.88 V

R0 max slope resistance * 5.2 mΩ

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20150827h

© 2015 IXYS all rights reserved

 CLA50E1200HB

Outlines TO-247
A D2
E A2 ØP Ø P1

S Sym. Inches Millimeter

Q
min. max. min. max.
A 0.185 0.209 4.70 5.30
D1 A1 0.087 0.102 2.21 2.59
D A2 0.059 0.098 1.50 2.49
D 0.819 0.845 20.79 21.45
2x E2
E 0.610 0.640 15.48 16.24
4 E2 0.170 0.216 4.31 5.48
e 0.215 BSC 5.46 BSC
1 2 3 L 0.780 0.800 19.80 20.30
L1 - 0.177 - 4.49
L1 E1 ØP 0.140 0.144 3.55 3.65
Q 0.212 0.244 5.38 6.19
S 0.242 BSC 6.14 BSC
L b 0.039 0.055 0.99 1.40
b2 0.065 0.094 1.65 2.39
b4 0.102 0.135 2.59 3.43
c 0.015 0.035 0.38 0.89
2x b2
3x b
C D1 0.515 - 13.07 -
D2 0.020 0.053 0.51 1.35
b4 A1
E1 0.530 - 13.45 -
2x e Ø P1 - 0.29 - 7.39

2 1

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20150827h

© 2015 IXYS all rights reserved

 CLA50E1200HB

Thyristor
150 600 10000
50 Hz, 80% VRRM VR = 0 V

120 500

TVJ = 45°C
90 400 2
It TVJ = 45°C
IT ITSM 1000
TVJ = 125°C
60 300 [A2s] TVJ = 125°C
[A] [A]
30 TVJ = 125°C 200

TVJ = 25°C
0 100 100
0.0 0.5 1.0 1.5 2.0 2.5 0.01 0.1 1 1 2 3 4 5 6 7 8 910
VT [V] t [s] t [ms]
Fig. 2 Surge overload current 2
Fig. 1 Forward characteristics Fig. 3 I t versus time (1-10 s)
ITSM: crest value, t: duration

10 1000 80
1: IGD, TVJ = 150°C
2: IGT, TVJ = 25°C 70
3: IGT, TVJ = -40°C 6
TVJ = 125°C 60
4 5 dc =
100
VG 23 50 1
tgd IT(AV)M 0.5
1 40 0.4
1
0.33
[V] [µs] [A]
30 0.17
10 0.08
20
4: PGAV = 0.5 W
5: PGM = 1 W lim.
6: PGM = 10 W 10
typ.
0.1 1 0
1 10 100 1000 10000 10 100 1000 0 40 80 120 160
IG [mA] IG [mA] Tcase [°C]
Fig. 4 Gate voltage & gate current Fig. 5 Gate controlled delay time tgd Fig. 6 Max. forward current at
case temperature

100 0.3
RthHA
dc = 0.4
80 1 0.6
0.5 0.8 0.2
P(AV) 1.0
0.4
60 0.33 2.0
4.0 ZthJC
0.17
[W] 0.1
0.08
40 [K/W] i Rthi (K/W) ti (s)
1 0.0075 0.0011
2 0.0170 0.0019
0.0 3 0.0570 0.0115
20
4 0.1580 0.1200
5 0.0105 0.5000
0
0 20 40 60 0 50 100 150 0.001 0.01 0.1 1 10
IT(AV) [A] Tamb [°C] t [s]
Fig. 7 Transient thermal impedance junction to case
Fig. 7a Power dissipation versus direct output current
Fig. 7b and ambient temperature

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20150827h

© 2015 IXYS all rights reserved