MGF65A4H Sanken

VCE = 650 V, IC = 40 A
Trench Field Stop IGBTs with Fast Recovery Diode

KGF65A4H, MGF65A4H, FGF65A4H Data Sheet
Description Packages
The KGF65A4H, MGF65A4H, and FGF65A4H are TO247-3L TO3P-3L
650 V Field Stop IGBTs. Sanken original trench (4)
(4)
structure decreases gate capacitance, and achieves high
speed switching and switching loss reduction. Thus,
these Field Stop IGBTs can improve the efficiency of
your circuit.
Features
● Low Saturation Voltage (1) (2) (3) (1) (2) (3)
● High Speed Switching
● With Integrated Fast Recovery Diode
TO3PF-3L
● RoHS Compliant
● VCE ------------------------------------------------------ 650 V

● IC (TC = 100 °C) ----------------------------------------- 40 A
● Short Circuit Withstand Time ----------------------- 10 μs
● VCE(sat) ----------------------------------------------- 1.9 V typ.
● tf (TJ = 175 °C) ------------------------------------ 60 ns typ.
● VF ---------------------------------------------------- 1.8 V typ.
Applications (1) (2) (3)
● Welding Converters
(2)(4)
● PFC Circuit
(1) Gate
(2) Collector
(1) (3) Emitter
(4) Collector
(3)
Not to scale
Selection Guide
Part Number Package
KGF65A4H TO247-3L
MGF65A4H TO3P-3L
FGF65A4H TO3PF-3L
xGF65A4H-DSE Rev.1.6 SANKEN ELCTRIC CO., LTD. 1

Feb. 19, 2018 http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2016
KGF65A4H, MGF65A4H, FGF65A4H
Absolute Maximum Ratings

Unless otherwise specified, TA = 25 °C
Parameter Symbol Conditions Rating Unit Remarks
Collector to Emitter Voltage VCE 650 V
Gate to Emitter Voltage VGE ±30 V
TC = 25 °C 65 A
Continuous Collector Current (1) IC
TC = 100 °C 40 A
PW ≤ 1 ms,
Pulsed Collector Current IC(PULSE) 120 A
duty cycle ≤ 1%
(2)
TC = 25 °C 40 A
Diode Continuous Forward Current (1) IF
TC = 100 °C 30 A
PW ≤ 1 ms,
Diode Pulsed Forward Current IF(PULSE) 100 A
duty cycle ≤ 1%
VGE = 15 V,
Short Circuit Withstand Time tSC VCE = 400 V, 10 μs
TJ = 175 °C
MGF65A4H
288
Power Dissipation PD TC = 25 °C W KGF65A4H
72 FGF65A4H
Operating Junction Temperature TJ 175 °C
Storage Temperature TSTG −55 to 150 °C
Between surface of
case and all pins
Isolation Voltage VISO(RMS) 1500 V FGF65A4H
that are shorted;
AC, 60 Hz, 1 min
Thermal Characteristics
Parameter Symbol Conditions Min. Typ. Max. Unit Remarks
MGF65A4H
Thermal Resistance of IGBT — — 0.52
RθJC (IGBT) °C/W KGF65A4H
(Junction to Case)
— — 2.08 FGF65A4H
MGF65A4H
Thermal Resistance of Diode — — 1.15
RθJC (Di) °C/W KGF65A4H
(Junction to Case)
— — 2.28 FGF65A4H
(1)
IC and IF are determined by the maximum junction temperature for TO3P-3L package.
(2)
Determined by bonding wires capability.

Electrical Characteristics
Parameter Symbol Conditions Min. Typ. Max. Unit
Collector to Emitter Breakdown
V(BR)CES IC = 100 μA, VGE = 0 V 650 — — V
Voltage
Collector to Emitter Leakage Current ICES VCE = 650 V, VGE = 0 V — — 100 µA
Gate to Emitter Leakage Current IGES VGE = ±30 V — — ±500 nA
Gate Threshold Voltage VGE(TH) VCE = 10 V, IC = 1 mA 4.0 5.5 7.0 V
Collector to Emitter Saturation
VCE(sat) VGE = 15 V, IC = 40 A — 1.9 2.37 V
Voltage
Input Capacitance Cies — 2300 —
VCE = 20 V,
Output Capacitance Coes VGE = 0 V, — 250 — pF
f = 1.0 MHz
Reverse Transfer Capacitance Cres — 110 —
VCE = 520 V, IC = 40 A,
Gate Charge Qg — 75 — nC
VGE = 15 V
Turn-on Delay Time td(on) — 40 —
Rise Time tr — 40 —
ns
Turn-off Delay Time td(off) TJ = 25 °C, — 100 —
Fall Time tf see Figure 1 — 40 —
(3)
Turn-on Energy Eon — 0.7 —
mJ
Turn-off Energy Eoff — 0.6 —
Turn-on Delay Time td(on) — 40 —
Rise Time tr — 40 —
ns
Turn-off Delay Time td(off) TJ = 175 °C, — 130 —
Fall Time tf see Figure 1 — 60 —
Turn-on Energy (3) Eon — 1.3 —
mJ
Turn-off Energy Eoff — 0.9 —
Emitter to Collector Diode Forward
VF IF = 30 A — 1.8 — V
Voltage
Emitter to Collector Diode Reverse IF = 30 A,
trr — 50 — ns
Recovery Time di/dt = 700 A/μs
(3)
Energy losses include the reverse recovery of diode.

Test Circuits and Waveforms

Conditions:
DUT VCE = 400 V
(Diode) IC = 40 A
VGE = 15 V
L RG = 10 Ω
L = 100 μH
VCE
RG
IC
15V VGE DUT
(IGBT)
(a) Test Circuit
VGE
90%
10% t
VCE
dv/dt
t
IC
90% 90%
10% 10%
t
td(on) tr td(off) tf
(b) Waveform
Figure 1. Test Circuits and Waveforms of dv/dt and Switching Time

Rating and Characteristic Curves
1000 1000
10 μs
100 100
Collector Current, IC (A)

100 μs
10 10
1 IGBT, 1 IGBT,
Single pulse, Single pulse,
TJ = 175 °C TJ = 25 °C
0.1 0.1
1 10 100 1000 1 10 100 1000
Collector–Emitter Voltage, VCE (V) Collector–Emitter Voltage, VCE (V)
Figure 2. IGBT Reverse Bias Safe Operating Area Figure 3. IGBT Safe Operating Area
300 100
250
80
Power Dissipation, PD (W)
200
60
150
40
100
TO3P-3L,
TO247-3L, TO3P-3L,
50 20 TO247-3L,
TJ < 175 °C
TJ < 175 °C
0
0
25 50 75 100 125 150 175
25 50 75 100 125 150 175
Case Temperature, TC (°C) Case Temperature, TC (°C)
Figure 4. Power Dissipation vs. TO3P-3L and Figure 5. Collector Current vs. TO3P-3L and
TO247-3L Case Temperature TO247-3L Case Temperature

100 40
80
Power Dissipation, PD (W)

30
60
20
40
TO3PF-3L, 10
20 TO3PF-3L,
TJ < 175 °C
TJ < 175 °C
0
0
25 50 75 100 125 150 175
25 50 75 100 125 150 175
Case Temperature, TC (°C) Case Temperature, TC (°C)
Figure 6. Power Dissipation vs. TO3PF-3L Case Figure 7. Collector Current vs. TO3PF-3L Case
Temperature Temperature
100 100
TJ = 25 °C VGE = 15 V TJ = 175 °C
VGE = 15 V
80 VGE = 12 V 80
VGE = 12 V
VGE = 20 V VGE = 20 V
60 60
VGE = 10 V VGE = 10 V
40 40
20 VGE = 8 V 20
VGE = 8 V
0 0
0 1 2 3 4 5 0 1 2 3 4 5
Collector–Emitter Voltage, VCE (V) Collector–Emitter Voltage, VCE (V)
Figure 8. Output Characteristics (TJ = 25 °C) Figure 9. Output Characteristics (TJ = 175 °C)

100 3.0
Collector-Emitter Saturation, VCE (sat) (V)

VCE = 5 V VGE = 15 V IC = 80 A
80
2.5
IC = 40 A
60
2.0
40
TJ = 25 °C
TJ = 175 °C 1.5
IC = 20 A
20
1.0
0
-50 -25 0 25 50 75 100 125 150 175
0 5 10 15
Gate–Emitter Voltage, VGE (V) Junction Temperature, TJ (°C)
Figure 10. Transfer Characteristics Figure 11. Saturation Voltage vs. Junction
Temperature
3.0 7
Collector-Emitter Saturation, VCE (sat) (V)
VGE = 15 V
2.5 TJ = 175 °C 6
Gate Threshold Voltage (V)
at VCE = 10 V, IC = 1 mA
TJ = 25 °C
2.0 5
1.5 TJ = −55 °C 4
1.0 3
0.5 2
0 20 40 60 80 -50 -25 0 25 50 75 100 125 150 175
Collector Current, IC (A) Junction Temperature, TJ (°C)
Figure 12. Saturation Voltage vs. Collector Current Figure 13. Gate Threshold Voltage vs. Junction
Temperature

10000 20
IC = 40 A
Gate -Emitter Voltage, VGE (V)

VCE ≈ 130 V
Cies
1000
Capacitance (pF)
Coes
10
VCE ≈ 520 V
100
Cres
f = 1 MHz,
VGE = 0 V
10 0
0 10 20 30 40 50 0 20 40 60 80
Collector–Emitter Voltage, VCE (V) Gate Charge, Qg (nC)
Figure 14. Capacitance Characteristics Figure 15. Typical Gate Charge
1000
1000
Inductive load,
IC = 40 A, VCE = 400 V,
VGE = 15 V, RG = 10 Ω
td(off)
Switching Time (ns)
Switching Time (ns)
100
td(off) tf
100 td(on)
tr
10 tr
tf
td(on) Inductive load,
VCE = 400 V, VGE = 15 V,
RG = 10 Ω, TJ = 175 °C
10
25 50 75 100 125 150 175 1
1 10 100
Junction Temperature, TJ (°C) Collector Current, IC (A)
Figure 16. Switching Time vs. Junction Temperature Figure 17. Switching Time vs. Collector Current

1000 4
Inductive load,
IC = 40 A, VCE = 400 V, Inductive load,
IC = 40 A, VCE = 400 V,
VGE = 15 V, TJ = 175 °C VGE = 15 V, RG = 10 Ω
3
Switching Loss (mJ)

Switching Time (ns)
td(off) tr Eon + Eoff
100 2
tf
Eon
1
td(on) Eoff
0
10 25 50 75 100 125 150 175
10 100
Gate Resistor, RG (Ω) Junction Temperature, TJ (°C)
Figure 18. Switching Time vs. Gate Resistor Figure 19. Switching Loss vs. Junction Temperature
12 10
Inductive load, Inductive load,
VCE = 400 V, VGE = 15 V, Eon + Eoff IC = 40 A, VCE = 400 V,
10
RG = 10 Ω, TJ = 175 °C 8 VGE = 15 V, TJ = 175 °C
Switching Loss (mJ)
Switching Loss (mJ)
8 Eon + Eoff
6
6 Eon
4
Eon
4
Eoff 2
2 Eoff
0 0
0 20 40 60 80 100 120 10 20 30 40 50 60 70 80 90 100
Collector Current, IC (A) Gate Resistor, RG (Ω)
Figure 20. Switching Loss vs. Collector Current Figure 21. Switching Loss vs. Gate Resistor

4 100
Inductive load,
IC = 40 A, VGE = 15 V,
RG = 10 Ω, TJ = 175 °C Eon + Eoff 80
3
Forward Current, IF (A)

Switching Loss (mJ)
60
Eon
2
TJ = 175 °C
40
1 Eoff
20 TJ = −55 °C
TJ = 25 °C
0 0
200 250 300 350 400 450 500 0.0 0.5 1.0 1.5 2.0 2.5 3.0
Collector–Emitter Voltage, VCE (V) Forward Voltage, VF (V)
Figure 22. Switching Loss vs. Collector–Emitter Figure 23. Diode Forward Characteristics
Voltage
3 160
Inductive load,
VR = 400 V,
Reverse Recovery Time, trr (ns)
140 TJ = 175 °C IF = 30 A
Forward Voltage, VF (V)
2 IF = 60 A
120
IF = 30 A
100
1
80
IF = 10 A
TJ = 25 °C
60
0
40
-50 -25 0 25 50 75 100 125 150 175
300 400 500 600 700 800 900 1000
Junction Temperature, TJ (°C) di/dt (A/μs)
Figure 24. Diode Forward Voltage Figure 25. Diode Reverse Recovery Time vs. di/dt
vs. Junction Temperature

3.0 30
TJ = 175 °C
Inductive load,
Reverse Recovery Current, Irr (A)

VR = 400 V,
Reverse Recovery Charge, Qrr (μC)
2.5 25
IF = 30 A
TJ = 175 °C
2.0 20
TJ = 25 °C
1.5 15
1.0 10
TJ = 25 °C 5 Inductive load,
0.5 VR = 400 V,
IF = 30 A
0
0.0
300 400 500 600 700 800 900 1000
300 400 500 600 700 800 900 1000
di/dt (A/μs) di/dt (A/µs)
Figure 26. Diode Reverse Recovery Charge vs. di/dt Figure 27. Diode Reverse Recovery Current vs. di/dt
10
Diode
Thermal Resistance (°C/W)
IGBT
0.1
TO3P-3L,
TO247-3L,
0.01 TC = 25 °C,
Single pulse,
VCE < 5 V
0.001
1μ 10μ 100μ 1m 10m 100m 1 10 100
Pulse Width (s)
Figure 28. Transient Thermal Resistance (TO3P-3L and TO247-3L)

10
Diode
Thermal Resistance (°C/W)
1 IGBT
0.1
TO3PF-3L,
0.01 TC = 25 °C,
Single pulse,
VCE < 5 V
0.001
1μ 10μ 100μ 1m 10m 100m 1 10 100
Pulse Width (s)
Figure 29. Transient Thermal Resistance (TO3PF-3L)

Physical Dimensions
● TO247-3L
● TO3P-3L

● TO3PF-3L
NOTES:
- Dimensions in millimeters
- Bare lead frame TO247, TO3P and TO3PF: Pb-free (RoHS compliant)
- When soldering the products, it is required to minimize the working time within the following limits:
Flow: 260 ± 5 °C / 10 ± 1 s, 2 times
Soldering Iron: 380 ± 10 °C / 3.5 ± 0.5 s, 1 time (Soldering should be at a distance of at least 1.5 mm from the
body of the products.)
- Soldering should be at a distance of at least 1.5 mm from the body of the products.
- The recommended screw torque for TO247, TO3P and TO3PF: 0.686 N∙m to 0.882 N∙m (7 kgf∙cm to 9 kgf∙cm)
-
Marking Diagram
TO247-3L TO3P-3L TO3PF-3L

(a) Part Number
(b) Lot Number
Y is the last digit of the year of manufacture (0 to 9).
M is the month of the year (1 to 9, O, N, or D).
KGF65A4H MGF65A4H DD is the day of the month (01 to 31).
FGF65A4H
YMDD XX YMDD XX
XX is the control number.
(a) YMDD XX (a)
(a)
(b) (b)
(b)

Important Notes
● All data, illustrations, graphs, tables and any other information included in this document (the “Information”) as to Sanken’s
products listed herein (the “Sanken Products”) are current as of the date this document is issued. The Information is subject to any
change without notice due to improvement of the Sanken Products, etc. Please make sure to confirm with a Sanken sales
representative that the contents set forth in this document reflect the latest revisions before use.
● The Sanken Products are intended for use as components of general purpose electronic equipment or apparatus (such as home
appliances, office equipment, telecommunication equipment, measuring equipment, etc.). Prior to use of the Sanken Products,
please put your signature, or affix your name and seal, on the specification documents of the Sanken Products and return them to
Sanken. When considering use of the Sanken Products for any applications that require higher reliability (such as transportation
equipment and its control systems, traffic signal control systems or equipment, disaster/crime alarm systems, various safety
devices, etc.), you must contact a Sanken sales representative to discuss the suitability of such use and put your signature, or affix
your name and seal, on the specification documents of the Sanken Products and return them to Sanken, prior to the use of the
Sanken Products. The Sanken Products are not intended for use in any applications that require extremely high reliability such as:
aerospace equipment; nuclear power control systems; and medical equipment or systems, whose failure or malfunction may result
in death or serious injury to people, i.e., medical devices in Class III or a higher class as defined by relevant laws of Japan
(collectively, the “Specific Applications”). Sanken assumes no liability or responsibility whatsoever for any and all damages and
losses that may be suffered by you, users or any third party, resulting from the use of the Sanken Products in the Specific
Applications or in manner not in compliance with the instructions set forth herein.
● In the event of using the Sanken Products by either (i) combining other products or materials or both therewith or (ii) physically,
chemically or otherwise processing or treating or both the same, you must duly consider all possible risks that may result from all
such uses in advance and proceed therewith at your own responsibility.
● Although Sanken is making efforts to enhance the quality and reliability of its products, it is impossible to completely avoid the
occurrence of any failure or defect or both in semiconductor products at a certain rate. You must take, at your own responsibility,
preventative measures including using a sufficient safety design and confirming safety of any equipment or systems in/for which
the Sanken Products are used, upon due consideration of a failure occurrence rate and derating, etc., in order not to cause any
human injury or death, fire accident or social harm which may result from any failure or malfunction of the Sanken Products.
Please refer to the relevant specification documents and Sanken’s official website in relation to derating.
● No anti-radioactive ray design has been adopted for the Sanken Products.
● The circuit constant, operation examples, circuit examples, pattern layout examples, design examples, recommended examples, all
information and evaluation results based thereon, etc., described in this document are presented for the sole purpose of reference of
use of the Sanken Products.
● Sanken assumes no responsibility whatsoever for any and all damages and losses that may be suffered by you, users or any third
party, or any possible infringement of any and all property rights including intellectual property rights and any other rights of you,
users or any third party, resulting from the Information.
● No information in this document can be transcribed or copied or both without Sanken’s prior written consent.
● Regarding the Information, no license, express, implied or otherwise, is granted hereby under any intellectual property rights and
any other rights of Sanken.
● Unless otherwise agreed in writing between Sanken and you, Sanken makes no warranty of any kind, whether express or implied,
including, without limitation, any warranty (i) as to the quality or performance of the Sanken Products (such as implied warranty
of merchantability, or implied warranty of fitness for a particular purpose or special environment), (ii) that any Sanken Product is
delivered free of claims of third parties by way of infringement or the like, (iii) that may arise from course of performance, course
of dealing or usage of trade, and (iv) as to the Information (including its accuracy, usefulness, or reliability).
● In the event of using the Sanken Products, you must use the same after carefully examining all applicable environmental laws and
regulations that regulate the inclusion or use or both of any particular controlled substances, including, but not limited to, the EU
RoHS Directive, so as to be in strict compliance with such applicable laws and regulations.
● You must not use the Sanken Products or the Information for the purpose of any military applications or use, including but not
limited to the development of weapons of mass destruction. In the event of exporting the Sanken Products or the Information, or
providing them for non-residents, you must comply with all applicable export control laws and regulations in each country
including the U.S. Export Administration Regulations (EAR) and the Foreign Exchange and Foreign Trade Act of Japan, and
follow the procedures required by such applicable laws and regulations.
● Sanken assumes no responsibility for any troubles, which may occur during the transportation of the Sanken Products including
the falling thereof, out of Sanken’s distribution network.
● Although Sanken has prepared this document with its due care to pursue the accuracy thereof, Sanken does not warrant that it is
error free and Sanken assumes no liability whatsoever for any and all damages and losses which may be suffered by you resulting
from any possible errors or omissions in connection with the Information.
● Please refer to our official website in relation to general instructions and directions for using the Sanken Products, and refer to the
relevant specification documents in relation to particular precautions when using the Sanken Products.
● All rights and title in and to any specific trademark or tradename belong to Sanken and such original right holder(s).
DSGN-CEZ-16003


MGF65A4H Sanken

Uploaded by

Copyright:

Available Formats

MGF65A4H Sanken

Uploaded by

Document Information

Original Description:

Original Title

Copyright

Available Formats

Share this document

Share or Embed Document

Sharing Options

Did you find this document useful?

Is this content inappropriate?

Copyright:

Available Formats

MGF65A4H Sanken

Uploaded by

Copyright:

Available Formats

VCE = 650 V, IC = 40 A

Trench Field Stop IGBTs with Fast Recovery Diode

● VCE ------------------------------------------------------ 650 V

Applications (1) (2) (3)

xGF65A4H-DSE Rev.1.6 SANKEN ELCTRIC CO., LTD. 1

Absolute Maximum Ratings

xGF65A4H-DSE Rev.1.6 SANKEN ELCTRIC CO., LTD. 2

xGF65A4H-DSE Rev.1.6 SANKEN ELCTRIC CO., LTD. 3

Test Circuits and Waveforms

(a) Test Circuit

Figure 1. Test Circuits and Waveforms of dv/dt and Switching Time

xGF65A4H-DSE Rev.1.6 SANKEN ELCTRIC CO., LTD. 4

Rating and Characteristic Curves

Collector Current, IC (A)

Collector–Emitter Voltage, VCE (V) Collector–Emitter Voltage, VCE (V)

Collector Current, IC (A)

xGF65A4H-DSE Rev.1.6 SANKEN ELCTRIC CO., LTD. 5

Collector Current, IC (A)

xGF65A4H-DSE Rev.1.6 SANKEN ELCTRIC CO., LTD. 6

Collector-Emitter Saturation, VCE (sat) (V)

Collector Current, IC (A) Junction Temperature, TJ (°C)

xGF65A4H-DSE Rev.1.6 SANKEN ELCTRIC CO., LTD. 7

Gate -Emitter Voltage, VGE (V)

Collector–Emitter Voltage, VCE (V) Gate Charge, Qg (nC)

Figure 14. Capacitance Characteristics Figure 15. Typical Gate Charge

xGF65A4H-DSE Rev.1.6 SANKEN ELCTRIC CO., LTD. 8

Switching Loss (mJ)

td(off) tr Eon + Eoff

Collector Current, IC (A) Gate Resistor, RG (Ω)

xGF65A4H-DSE Rev.1.6 SANKEN ELCTRIC CO., LTD. 9

Forward Current, IF (A)

Collector–Emitter Voltage, VCE (V) Forward Voltage, VF (V)

xGF65A4H-DSE Rev.1.6 SANKEN ELCTRIC CO., LTD. 10

Reverse Recovery Current, Irr (A)

di/dt (A/μs) di/dt (A/µs)

Figure 28. Transient Thermal Resistance (TO3P-3L and TO247-3L)

xGF65A4H-DSE Rev.1.6 SANKEN ELCTRIC CO., LTD. 11

Figure 29. Transient Thermal Resistance (TO3PF-3L)

xGF65A4H-DSE Rev.1.6 SANKEN ELCTRIC CO., LTD. 12

xGF65A4H-DSE Rev.1.6 SANKEN ELCTRIC CO., LTD. 13

TO247-3L TO3P-3L TO3PF-3L

xGF65A4H-DSE Rev.1.6 SANKEN ELCTRIC CO., LTD. 14

xGF65A4H-DSE Rev.1.6 SANKEN ELCTRIC CO., LTD. 15

You might also like