TLP733,TLP734

TOSHIBA Photocoupler GaAs Ired&Photo−Transistor

TLP733, TLP734
Office Machine
Unit in mm
Household Use Equipment
Solid State Relay
Switching Power Supply

The TOSHIBA TLP733 and TLP734 consist of a photo−transistor

optically coupled to a gallium arsenide infrared emitting diode in a six
lead plastic DIP.
TLP734 is no−base internal connection for high−EMI environments.

• Collector−emitter voltage: 55 V (min.)

• Current transfer ratio: 50% (min.)
Rank GB: 100% (min.)
• UL recognized: UL1577, file no. E67349
• BSI approved: BS EN60065: 1994
Certificate no. 7364
BS EN60950: 1992
Certificate no. 7365 TOSHIBA 11−7A8
• SEMKO approved: SS4330784
Weight: 0.42 g
Certificate no. 9325163, 9522142
• Isolation voltage: 4000 Vrms (min.)
• Option (D4) type
VDE approved: DIN VDE0884 / 06.92,
Certificate no. 74286, 91808
Maximum operating insulation voltage: 630, 890 VPK
Pin Configurations (top view)
Highest permissible over voltage: 6000, 8000 VPK

(Note) When a VDE0884 approved type is needed, TLP733 TLP734

please designate the “Option (D4)”
1 6 1 6

7.62 mm pich 10.16 mm pich 2 5 2 5

standard type TLP×××F type
3 4 3 4
• Creepage distance : 7.0 mm (min.) 8.0 mm (min.)
Clearance : 7.0 mm (min.) 8.0 mm (min.)
Internal creepage path : 4.0 mm (min.) 4.0 mm (min.) 1: Anode 1: Anode
Insulation thickness : 0.5 mm (min.) 0.5 mm (min.) 2: Cathode 2: Cathode
3: Nc 3: Nc
4: Emitter 4: Emitter
5: Collector 5: Collector
6: Base 6: Nc

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Current Transfer Ratio
Current Transfer
Classi− Ratio (%)
Type fication (IC / IF) Marking Of Classification
*1 IF = 5mA, VCE = 5V, Ta = 25°C
Min. Max.
■ ■ ■
(None) 50 600 Blank, Y, Y , G, G , B, B , GB
■
50 150 Y, Y
TLP733
■
Rank GR 100 300 G, G
TLP734
■
200 600 B, B
■ ■
Rank GB 100 600 G, G , B, B , GB

*1: Ex. rank GB: TLP733 (GB)

Note: Application type name for certification test, please use standard product type name, i.e.
TLP733 (GB): TLP733

Maximum Ratings (Ta = 25°C)

Characteristic Symbol Rating Unit

Forward current IF 60 mA
Forward current derating (Ta ≥ 39°C) ΔIF / °C −0.7 mA / °C
LED

Peak forward current (100 μs pulse, 100 pps) IFP 1 A

Reverse voltage VR 5 V
Junction temperature Tj 125 °C
Collector−emitter voltage VCEO 55 V
Collector−base voltage (TLP733) VCBO 80 V
Emitter−collector voltage VECO 7 V
Detector

Emitter−base voltage (TLP733) VEBO 7 V

Collector current IC 50 mA

Power dissipation PC 150 mW

Power dissipation derating (Ta ≥ 25°C) ΔPC / °C −1.5 mW / °C
Junction temperature Tj 125 °C
Storage temperature range Tstg −55~125 °C
Operating temperature range Topr −40~100 °C
Lead soldering temperature (10 s) Tsol 260 °C
Total package power dissipation PT 250 mW
Total package power dissipation derating (Ta ≥ 25°C) ΔPT / °C −2.5 mW / °C
Isolation voltage (AC, 1 min., R.H.≤ 60%) BVS 4000 Vrms

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Recommended Operating Conditions

Characteristic Symbol Min. Typ. Max. Unit

Supply voltage VCC ― 5 24 V

Forward current IF ― 16 25 mA
Collector current IC ― 1 10 mA
Operating temperature Topr −25 ― 85 °C

Individual Electrical Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min. Typ. Max. Unit

Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V

LED

Reverse current IR VR = 5 V ― ― 10 μA
Capacitance CT V = 0, f = 1 MHz ― 30 ― pF
Collector−emitter
V(BR)CEO IC = 0.5 mA 55 ― ― V
breakdown voltage
Emitter−collector
V(BR)ECO IE = 0.1 mA 7 ― ― V
breakdown voltage
Collector−base
V(BR)CBO IC = 0.1 mA 80 ― ― V
breakdown voltage (TLP733)
Emitter−base
V(BR)EBO IE = 0.1 mA 7 ― ― V
breakdown voltage (TLP733)
VCE = 24 V (ambient light 0.01 0.1
― μA
Detector

below 1000 ℓx) (2) (10)

Collector dark current ICEO
VCE = 24 V (ambient light 2 50
― μA
Ta = 85°C below 1000 ℓx) (4) (50)
Collector dark current VCE = 24 V, Ta = 85°C
ICER ― 0.5 10 μA
(TLP733) RBE = 1MΩ
Collector dark current
ICBO VCB = 10 V ― 0.1 ― nA
(TLP733)
DC forward current gain
hFE VCE = 5 V, IC = 0.5 mA ― 400 ― ―
(TLP733)
Capacitance collector to
CCE V = 0, f = 1 MHz ― 10 ― pF
emitter

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Coupled Electrical Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition MIn. Typ. Max. Unit

IF = 5 mA, VCE = 5 V 50 — 600

Current transfer ratio IC / IF %
Rank GB
100 — 600

IF = 1 mA, VCE = 0.4 V — 60 —

Saturated CTR IC / IF (sat) %
Rank GB 30 — —
Base photo−current IPB IF = 5 mA, VCB = 5 V — 10 — %
IC = 2.4 mA, IF = 8 mA — — 0.4
Collector−emitter saturation
VCE (sat) IC = 0.2 mA, IF = 1 mA — 0.2 — V
voltage
Rank GB — — 0.4

Isolation Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min. Typ. Max. Unit

Capacitance (input to output) CS VS = 0, f = 1 MHz — 0.8 — pF

12 14
Isolation resistance RS VS = 500 V, R.H.≤ 60% 1×10 10 — Ω
AC, 1 minute 4000 — —
Vrms
Isolation voltage BVS AC, 1 second, in oil — 10000 —
DC, 1 minute, in oil — 10000 — Vdc

Switching Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min. Typ. Max. Unit

Rise time tr — 2 —
Fall time tf VCC = 10 V, IC = 2 mA — 3 —
μs
RL = 100Ω
Turn−on time tON — 3 10
Turn−off time tOFF — 3 10
Turn−on time tON — 3 —
RL = 1.9 kΩ (Fig.1)
Storage time tS RBE = open — 40 — μs
VCC = 5 V, IF = 16 mA
Turn−off time tOFF — 90 —
Turn−on time tON — 3 —
RL = 1.9 kΩ (Fig.1)
Storage time tS RBE = 220 kΩ (TLP733) — 30 — μs
VCC = 5 V, IF = 16 mA
Turn−off time tOFF — 60 —

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Fig. 1 Switching time test circuit

IF
IF VCC
ts
RL

VCE 4.5V
RBE VCE
0.5V

tON tOFF

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IF – Ta PC – Ta
100 200

Allowable collector power dissipation PC

80 160
Allowable forward current

60 120
IF (mA)

(mW)
40 80

20 40

0 0
−20 0 20 40 60 80 100 120 −20 0 20 40 60 80 100 120

Ambient temperature Ta (°C) Ambient temperature Ta (°C)

IFP – DR IF – V F
3000 100
Pulse width ≤ 100 μs Ta = 25°C
Ta = 25°C 50
Pulse forward current IFP (mA)

1000 30
(mA)

500 10
Forward current IF

300
5
3

100
1
50
0.5
30
0.3

10 0
0.1
3 10−3 3 10−2 3 10−1 3 10 0.6 0.8 1.0 1.2 1.4 1.6 1.8

Duty cycle ratio DR Forward voltage VF (V)

∆VF / ∆Ta – IF IFP – VFP

−2.8 1000
Forward voltage temperature coefficient

500
−2.4
Pulse forward current IFP (mA)

300
∆VF / ∆Ta (mV / °C)

−2.0
100

50
−1.6
30

−1.2
10
Pulse width ≤ 10 μs
−0.8 5
Repetitive
3
frequency = 100 Hz
−0.4
Ta = 25°C
1
0.1 0.3 1 3 10 30 50 0.4 0.8 1.2 1.6 2.0 2.4 2.8

Forward current IF (mA) Pulse forward voltage VF (V)

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IC – VCE IC – VCE
50 30
Ta = 25°C Ta = 25°C 50 mA

50 mA 40 mA
25
40
(mA)

(mA)
30 mA
30 mA
20 mA
20
Collector current IC

Collector current IC
15 mA 20 mA
30

15
PC (MAX.)
10 mA 10 mA
20
10

5 mA
10 IF = 5 mA
5
IF = 2 mA

0 0
0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1.0 1.2

Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V)

IC – IF IC / IF – IF
1000
Ta = 25°C
30
VCE = 5 V
IC / IF (%)

500
10 VCE = 0.4 V
(mA)

SAMPLE A
300
3 SAMPLE A
Collector current IC

Current transfer ratio

1
100

0.3 SAMPLE B Ta = 25°C

50
VCE = 5 V
0.1 SAMPLE B
VCE = 0.4 V 30

0.03

0.01 10
0.1 0.3 1 3 10 30 100 300 0.1 0.3 1 3 10 30 100

Forward current IF (mA) Forward current IF (mA)

TLP733 IC – IF at RBE TLP733 IPB – IF

100 1000
Ta = 25°C Ta = 25°C
50 VCE = 5 V
300
30
IPB (μA)
(mA)

100

10
Collector current IC

30
Base photo current

RBE=∞
3 VCC 10
IF VCB = 0 V
50kΩ A VCB = 5 V VCB
3
1 100kΩ IF
1
500kΩ
0.3
RBE 0.3 A

0.1 0.1
0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100

Forward current IF (mA) Forward current IF (mA)

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ICEO / Ta VCE (sat) – Ta

0.24
Ambient light IF = 5 mA
101 Below = 0 ℓx IC = 1 mA

0.20

Collector-emitter saturation
voltage VCE (sat) (V)
VCE = 24 V
0.16
100

10 V
(μA)

0.12
5V
Collector dark current ICEO

10−1 0.08

0.04
−40 −20 0 20 40 60 80 100
−2
10
Ambient temperature Ta (°C)

10−3

TLP733 Switching Time – RL

100
tOFF
10−4 50 ts
0 20 40 60 80 100 120
(μs)

30
Ambient temperature Ta (°C) Ta = 25°C
IF = 16 mA
SWITCHING TIME

VCC = 5 V
RBE = 220kΩ
10

3 tON

1
1 3 5 10 30 50 100 300

Load resistance RL (kΩ)

IC – Ta
100
VCE = 5 V

50 IF = 25 mA

30
10 mA
(mA)

10 5 mA
Collector current IC

1 mA
1

0.5
0.5 mA
0.3

0.1
−40 −20 0 20 40 60 80 100

Ambient temperature Ta (°C)

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Switching Time RBE Switching Time – RL

50
Ta = 25°C
3000 I = 16 mA
F
30 tOFF VCC = 5 V
1000
ts
Switching time (μs)

Switching time (μs)

300 tOFF
ts
10
Ta = 25°C
100
IF = 16 mA
VCC = 5 V
5 RL = 1.9kΩ 30

3 tON 10

tON
3

1 1
100k 300k 1M 3M ∞ 1 3 5 10 30 50 100

Base emitter resistance RBE (Ω) Load resistance RL (kΩ)

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RESTRICTIONS ON PRODUCT USE 20070701-EN

• The information contained herein is subject to change without notice.

• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.

• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.

• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.

• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.

• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.

• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.

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