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    QUIZ 5 Answer

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    Krish Vaghela
    This document contains a 10 question quiz about semiconductor devices and materials. The questions cover topics like the differences between Schottky diodes and PN junction diodes, mechanisms of current transport, Zener breakdown characteristics, MOS capacitor properties, fiber optic communication wavelengths, carrier freezeout in devices, and factors that influence BJT gain and PN junction breakdown voltage.

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    QUIZ 5 Answer

    Uploaded by

    Krish Vaghela
    30 views3 pages
    This document contains a 10 question quiz about semiconductor devices and materials. The questions cover topics like the differences between Schottky diodes and PN junction diodes, mechanisms of current transport, Zener breakdown characteristics, MOS capacitor properties, fiber optic communication wavelengths, carrier freezeout in devices, and factors that influence BJT gain and PN junction breakdown voltage.

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    This document contains a 10 question quiz about semiconductor devices and materials. The questions cover topics like the differences between Schottky diodes and PN junction diodes, mechanisms of current transport, Zener breakdown characteristics, MOS capacitor properties, fiber optic communication wavelengths, carrier freezeout in devices, and factors that influence BJT gain and PN junction breakdown voltage.

    Copyright:

    © All Rights Reserved
    Download as DOCX, PDF, TXT or read online from Scribd
    Download as docx, pdf, or txt
    30 views3 pages

    QUIZ 5 Answer

    Uploaded by

    Krish Vaghela
    This document contains a 10 question quiz about semiconductor devices and materials. The questions cover topics like the differences between Schottky diodes and PN junction diodes, mechanisms of current transport, Zener breakdown characteristics, MOS capacitor properties, fiber optic communication wavelengths, carrier freezeout in devices, and factors that influence BJT gain and PN junction breakdown voltage.

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    © All Rights Reserved
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    of 3

    DAIICT Gandhinagar

    Semiconductor Devices
    Nov 2023

    QUIZ – 5

    NAME: ID:

    Q1:
    Consider a switch X is made of Schottky diode and a switch Y is made of P-N junction diode.
    Which of the following is true?
    a. Switch X will have low reverse current, higher ON current and fast transients
    compared to switch Y
    b. Switch X will have large reverse current, higher ON current and fast transient
    response compared to switch Y
    c. Switch X will have large reverse current and low ON current compared to switch Y
    d. Switch X will have low reverse current, low ON current and slow transients as
    compared to switch Y.
    Q2:
    What is the mechanism of current transport in a Schottky diode under the forward BIAS:
    a. Drift and Diffusion of majority carriers
    b. Tunneling of majority carriers
    c. Thermionic emission of minority carriers
    d. Thermionic emission of majority carriers
    Q3:
    Which of the following is FALSE about Zener breakdown?
    a. It can occur in a junction with highly doped p side and very lightly doped n side,
    P+ /N junction
    b. It requires a junction between heavily doped p and n regions, ie P+ /N+
    c. It occurs due to tunneling of carriers across the junction.
    d. It occurs due to very high electric field established across the junction.
    Q4.
    The capacitance of P+/N junction will -------------------- when the reverse bias across the
    junction increases while the capacitance of N+ / P junction will ------------ as the reverse bias
    across the junction decreases.

    1
    a. Increase, Increase
    b. Decrease, Decrease
    c. Increase, decrease
    d. Decrease, Increase
    Q5.
    The wavelength used for fibre optics communication is --------------- and the material which
    can ensure efficient operation for this wavelength is -----------------------.

    a. 1.55m, InGaAs
    b. 1.55 m, AlGaN
    c. 2 m, SiC
    d. 2 m, GaN
    Q6.
    Which among the following devices will not suffer from CARRIER FREEZE OUT?
    a. nMOSFET
    b. pMOSFET
    c. GaAs HEMT
    d. GaN HEMT
    Q7.
    Consider two MOSCAPs : MOSCAP A has p-type substrate and MOSCAP B has n-type
    substrate. If thickness of oxide in both MOSCAPs are increased , which of the following
    statement is TRUE about magnitude of threshold Voltage?
    a. Threshold voltage of MOSCAP A will increase and of MOSCAP B will decrease
    b. Threshold voltage of MOSCAP A will decrease and of MOSCAP B will increase
    c. Threshold voltage of both MOSCAP A and B will Increase
    d. Threshold voltage of both MOSCAP A and B will decrease
    Q8.

    The quantity F is critical parameter in MOS theory. What happens when the surface
    potential equals 2 F?
    a. The minority carrier conc at surface equals the minority carrier conc at bulk
    b. The minority carrier conc at surface equals the majority carrier conc at bulk
    c. The minority carrier conc at surface equals intrinsic carrier conc ni.
    d. The majority carrier conc at surface equals the intrinsic carrier conc ni
    Q9.
    Consider two BJTs, A and B having identical designs but with A having higher Emitter doping
    than B. Neglecting the effects of bandgap narrowing, temperature etc, the gain of device A
    will be --------------- gain of device B

    2
    a. Greater than
    b. Equal to
    c. Less than
    d. None of these
    Q10.
    From among the four given materials, P-N junction made of which of these materials give
    the highest breakdown voltage.
    HINT – higher the band gap, translates to higher breakdown voltage
    a. Gallium Nitride GaN
    b. Gallium arsenide GaAs
    c. Gallium Oxide GaO2
    d. Silicon carbide SiC

    ******

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