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    PN Junction

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    dhun1513.be22
    The document discusses the PN junction diode and its voltage-current (VI) characteristics. It describes the structure of a PN junction, formed when a P-type and N-type semiconductor material are joined together. When unbiased, there is no current flow across the junction. When forward biased, the potential barrier is reduced and current can flow. When reverse biased, the potential barrier increases and very little reverse saturation current flows. The document defines key terms related to a diode's VI characteristics and breakdown voltages. It compares the ideal diode model to practical diode models and characteristics.

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    © All Rights Reserved
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    PN Junction

    Uploaded by

    dhun1513.be22
    25 views21 pages
    The document discusses the PN junction diode and its voltage-current (VI) characteristics. It describes the structure of a PN junction, formed when a P-type and N-type semiconductor material are joined together. When unbiased, there is no current flow across the junction. When forward biased, the potential barrier is reduced and current can flow. When reverse biased, the potential barrier increases and very little reverse saturation current flows. The document defines key terms related to a diode's VI characteristics and breakdown voltages. It compares the ideal diode model to practical diode models and characteristics.

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    Pn Junction

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    The document discusses the PN junction diode and its voltage-current (VI) characteristics. It describes the structure of a PN junction, formed when a P-type and N-type semiconductor material are joined together. When unbiased, there is no current flow across the junction. When forward biased, the potential barrier is reduced and current can flow. When reverse biased, the potential barrier increases and very little reverse saturation current flows. The document defines key terms related to a diode's VI characteristics and breakdown voltages. It compares the ideal diode model to practical diode models and characteristics.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    25 views21 pages

    PN Junction

    Uploaded by

    dhun1513.be22
    The document discusses the PN junction diode and its voltage-current (VI) characteristics. It describes the structure of a PN junction, formed when a P-type and N-type semiconductor material are joined together. When unbiased, there is no current flow across the junction. When forward biased, the potential barrier is reduced and current can flow. When reverse biased, the potential barrier increases and very little reverse saturation current flows. The document defines key terms related to a diode's VI characteristics and breakdown voltages. It compares the ideal diode model to practical diode models and characteristics.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    Topic: PN Junction Diode and its VI

    characteristics

    Basics of Electronics Engineering (EC101), Faculty Name and Group no


    1
    Objective

    • Understand the basic concepts of semiconductor diode and


    their applications in electronic circuits.
    • Differentiate between V-I characteristics of forward and
    reverse biased PN junctions.

    Basics of Electronics Engineering (EC101),


    2
    Faculty Name and Group no
    Learning outcome

    The student should be able to explain


    • the structure of a P-N junction diode
    • the function of a P-N junction diode
    • forward and reverse biased characteristics of a PN diode

    Basics of Electronics Engineering (EC101),


    3
    Faculty Name and Group no
    Formation of PN Junction

    • If the n type and p type materials are joined


    together.
    • In the n-type region there are extra electrons and in
    the p-type region, there are holes from the acceptor
    impurities .
    • the electrons from the n-region which have reached
    the conduction band are free to diffuse across the
    junction and combine with holes.
    • Filling a hole makes a negative ion and leaves behind a
    positive ion on the n-side. A space charge builds up,
    creating a depletion region.
    Basics of Electronics Engineering (EC101),
    4
    Faculty Name and Group no
    P-N Junction with no bias

    • When external voltage is zero, circuit is open and the


    potential barrier does not allow the current to flow.
    Therefore, the circuit current is zero.

    Basics of Electronics Engineering (EC101),


    5
    Faculty Name and Group no
    Depletion region

    Basics of Electronics Engineering (EC101),


    6
    Faculty Name and Group no
    P-N Junction with Forward bias

    Basics of Electronics Engineering (EC101),


    7
    Faculty Name and Group no
    P-N Junction with Forward bias

    • When P-type (Anode is connected to +ve terminal and n- type


    (cathode) is connected to –ve terminal of the supply voltage,
    is known as forward bias.
    • The potential barrier is reduced when diode is in the forward
    biased condition.
    • At some forward voltage, the potential barrier altogether
    eliminated and current starts flowing through the diode and
    also in the circuit. The diode is said to be in ON state.
    • The current increases with increasing forward voltage.

    Basics of Electronics Engineering (EC101),


    8
    Faculty Name and Group no
    P-N Junction with Reverse bias

    Basics of Electronics Engineering (EC101),


    9
    Faculty Name and Group no
    PN junction

    Basics of Electronics Engineering (EC101),


    10
    Faculty Name and Group no
    Ideal Diode vs practical diode

    Basics of Electronics Engineering (EC101),


    11
    Faculty Name and Group no
    diode as switch

    Basics of Electronics Engineering (EC101),


    12
    Faculty Name and Group no
    Ideal Diode vs practical diode

    Basics of Electronics Engineering (EC101),


    13
    Faculty Name and Group no
    P-N Junction with Reverse bias

    • When N-type (cathode) is connected to +ve terminal


    and P-type (Anode) is connected to the –ve terminal
    of the supply voltage is known as reverse bias and
    the potential barrier across the junction increases.
    • Therefore, the junction resistance becomes very high
    and a very small current (reverse saturation current)
    flows in the circuit. The diode is said to be in OFF
    state.
    • The reverse bias current is due to minority charge
    carriers.

    Basics of Electronics Engineering (EC101),


    14
    Faculty Name and Group no
    Important Definitions

    • Knee Voltage
    The voltage is applied then the junction starts increasing rapidly. It
    is known as knee voltage and an alternate name of this is cut in voltage.
    • Breakdown Voltage
    The minimum reverse voltage that makes the diode conduct
    appreciably in reverse.

    • Peak Inverse Voltage


    The maximum voltage a diode or other device can withstand in the
    reverse-biased direction before breakdown.
    • Maximum Power Rating
    Maximum power that a PN junction or diode can dissipate
    without damaging the device itself.

    Basics of Electronics Engineering (EC101),


    15
    Faculty Name and Group no
    V-I Characteristics
    1. Forward Bias Characteristics Jargons
    2. Reverse Bias Characteristics
    ▪ Knee Voltage
    ▪ Breakdown Voltage
    ▪ Maximum Forward Current
    ▪ Peak Inverse Voltage
    ▪ Maximum Power Rating

    Basics of Electronics Engineering (EC101),


    16
    Faculty Name and Group no
    V-I Characteristics
    1. Forward Bias Characteristics
    Jargons
    2. Reverse Bias Characteristics
    ▪ Knee Voltage
    ▪ Breakdown Voltage
    ▪ Maximum Forward Current
    ▪ Peak Inverse Voltage
    ▪ Maximum Power Rating

    Basics of Electronics Engineering (EC101),


    17
    Faculty Name and Group no
    V-I Characteristics
    Jargons
    ▪ Knee Voltage
    ▪ Breakdown Voltage
    ▪ Maximum Forward Current
    ▪ Peak Inverse Voltage
    ▪ Maximum Power Rating

    Basics of Electronics Engineering (EC101),


    18
    Faculty Name and Group no
    Equivalent Circuits

    PIECEWISE-LINEAR SIMPLIFIED MODEL IDEAL DIODE


    TYPE

    MODEL
    CONDITION

    Rnetwork » Rav Rnetwork » Rav


    Enetwork » VT

    Ideal Ideal Ideal


    VT rav Diode
    VT Diode Diode
    MODEL

    Id Id Id
    CHARACTERISTICS

    rav

    o VT Vd Basics o VT (EC101),Vd o
    19 Vd
    of Electronics Engineering
    Faculty Name and Group no
    • Add numerical on PN diode and 5 objective
    questions

    Basics of Electronics Engineering (EC101),


    20
    Faculty Name and Group no
    Thank you

    Basics of Electronics Engineering (EC101),


    21
    Faculty Name and Group no

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