ACS759 Datasheet
ACS759 Datasheet
ACS759 Datasheet
PACKAGE: 5-Pin CB Package The output of the device has a positive slope (>VCC / 2) when an
increasing current flows through the primary copper conduction
path (from terminal 4 to terminal 5), which is the path used
for current sampling. The internal resistance of this conductive
path is 100 µΩ typical, providing low power loss.
The thickness of the copper conductor allows survival of the
device at high overcurrent conditions. The terminals of the
conductive path are electrically isolated from the signal leads
PSS PFF
Leadform Leadform
Continued on the next page…
Additional leadforms available for qualifying volumes
+3.3 V
1
4 VCC
IP+ CBYP
ACS759 0.1 µF
2
IP GND
CF
5
IP– 3
VIOUT VOUT
RF
Application 1: The ACS759 outputs an analog signal, VOUT , that varies linearly with the bidirectional AC or DC primary current, IP ,
within the range specified. CF is for optimal noise management, with values that depend on the application.
Typical Application
ACS759-DS, Rev. 8 February 3, 2020
MCO-0000204
ACS759xCB Thermally Enhanced, Fully Integrated, Hall-Effect-Based Linear Current Sensor IC
with 100 µΩ Current Conductor and Optimized Performance at 3.3 V
SELECTION GUIDE
Package Primary Sampled Sensitivity
Sens (Typ.) Current TOP
Part Number [1] Current, IP Packing [3]
Terminals Signal Pins Directionality (°C)
(A) (mV/A) [2]
ACS759LCB-050B-PFF-T Formed Formed ±50 26.4 Bidirectional
–40 to 150
ACS759LCB-100B-PFF-T Formed Formed ±100 13.2 Bidirectional
ACS759KCB-150B-PFF-T Formed Formed ±150 8.8 Bidirectional 34 pieces
–40 to 125
ACS759KCB-150B-PSS-T Straight Straight ±150 8.8 Bidirectional per tube
ACS759ECB-200B-PFF-T Formed Formed ±200 6.6 Bidirectional
–40 to 85
ACS759ECB-200B-PSS-T Straight Straight ±200 6.6 Bidirectional
2
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
ACS759xCB Thermally Enhanced, Fully Integrated, Hall-Effect-Based Linear Current Sensor IC
with 100 µΩ Current Conductor and Optimized Performance at 3.3 V
SPECIFICATIONS
ISOLATION CHARACTERISTICS
Characteristic Symbol Notes Rating Unit
Agency type-tested for 60 seconds per
Dielectric Strength Test Voltage* VISO 4800 VAC
UL standard 60950-1, 2nd Edition
For basic (single) isolation per UL standard 60950-1, 2nd 990 VDC or Vpk
Working Voltage for Basic Isolation VWFSI
Edition 700 Vrms
For reinforced (double) isolation per UL standard 60950- 636 VDC or Vpk
Working Voltage for Reinforced Isolation VWFRI
1, 2nd Edition 450 Vrms
* Allegro does not conduct 60-second testing. It is done only during the UL certification process.
3
Allegro MicroSystems
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ACS759xCB Thermally Enhanced, Fully Integrated, Hall-Effect-Based Linear Current Sensor IC
with 100 µΩ Current Conductor and Optimized Performance at 3.3 V
[2] Test was done with Allegro evaluation board. The maximum allowed current is limited by TJ(max) only.
[3] For more overcurrent profiles, please see FAQ on the Allegro website, www.allegromicro.com.
4
Allegro MicroSystems
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ACS759xCB Thermally Enhanced, Fully Integrated, Hall-Effect-Based Linear Current Sensor IC
with 100 µΩ Current Conductor and Optimized Performance at 3.3 V
+3 to 3.6 V
IP+ VCC
To all subcircuits
Dynamic Offset
Cancellation
VIOUT
Filter
Amp Out
0.1 µF
Gain Offset
Gain Temperature Offset Temperature
Coefficient Coefficient
Trim Control
IP– GND
Terminal List
IP+ 4 Number Name Description
3 VIOUT
1 VCC Device power supply terminal
2 GND
2 GND Signal ground terminal
1 VCC 3 VIOUT Analog output signal
IP– 5
4 IP+ Terminal for current being sampled
5 IP– Terminal for current being sampled
Pinout Diagram
5
Allegro MicroSystems
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ACS759xCB Thermally Enhanced, Fully Integrated, Hall-Effect-Based Linear Current Sensor IC
with 100 µΩ Current Conductor and Optimized Performance at 3.3 V
COMMON OPERATING CHARACTERISTICS [1]: Valid at TOP = –40°C to 150°C and VCC = 3.3 V, unless otherwise specified
Characteristic Symbol Test Conditions Min. Typ. Max. Unit
Supply Voltage VCC 3 3.3 3.6 V
Supply Current ICC Output open – 10 13.5 mA
Power-On Delay tPOD TA = 25°C – 10 – µs
IP step = 60% of IP+, 10% to 90% rise time, TA = 25°C,
Rise Time [2] tr – 3 – µs
COUT = 0.47 nF
Propagation Delay Time [2] tPROP TA = 25°C, COUT = 0.47 nF – 1 – µs
Response Time tRESPONSE Measured as sum of tPROP and tr – 4 – µs
Internal Bandwidth [3] BWi –3 dB; TA = 25°C, COUT = 0.47 nF – 120 – kHz
Output Load Resistance RLOAD(MIN) VIOUT to GND 4.7 – – kΩ
Output Load Capacitance CLOAD(MAX) VIOUT to GND – – 10 nF
Primary Conductor Resistance RPRIMARY TA = 25°C – 100 – µΩ
Symmetry [2] ESYM Over half-scale of IP – 100 – %
Quiescent Output Voltage [4] VIOUT(Q) IP = 0 A, TA = 25°C – VCC/2 – V
Ratiometry [2] VRAT VCC = 3 to 3.6 V – 100 – %
6
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ACS759xCB Thermally Enhanced, Fully Integrated, Hall-Effect-Based Linear Current Sensor IC
with 100 µΩ Current Conductor and Optimized Performance at 3.3 V
X050B PERFORMANCE CHARACTERISTICS [1]: TOP = –40°C to 150°C, VCC = 3.3 V, unless otherwise specified
Characteristic Symbol Test Conditions Min. Typ. Max. Unit
Primary Sampled Current IP –50 – 50 A
SensTA Full scale of IP applied for 5 ms, TA = 25°C – 26.4 – mV/A
Sensitivity Sens(TOP)HT Full scale of IP applied for 5 ms, TOP = 25°C to 150°C – 26.5 – mV/A
Sens(TOP)LT Full scale of IP applied for 5 ms,TOP = –40°C to 25°C – 26 – mV/A
Noise [2] VNOISE TA= 25°C, 10 nF on VIOUT pin to GND – 6.6 – mV
Nonlinearity ELIN Up to full scale of IP , IP applied for 5 ms – <±1 – %
VOE(TA) IP = 0 A, TA = 25°C – ±5 – mV
Electrical Offset Voltage [3] VOE(TOP)HT IP = 0 A, TOP = 25°C to 150°C – ±10 – mV
VOE(TOP)LT IP = 0 A, TOP = –40°C to 25°C – ±25 – mV
Magnetic Offset Error IERROM IP = 0 A, TA = 25°C, after excursion of 50 A – 125 – mA
ETOT(HT) Over full scale of IP , IP applied for 5 ms, TOP = 25°C to 150°C – ±1.5 – %
Total Output Error [4]
ETOT(LT) Over full scale of IP , IP applied for 5 ms, TOP = –40°C to 25°C – ±3.5 – %
[1] See Characteristic Performance Data page for parameter distributions over temperature range.
[2] ±3 sigma noise voltage.
[3] V
OE(TOP) drift is referred to ideal VIOUT(Q)
= 1/2 VCC.
[4] Percentage of I . Output filtered.
P
X100B PERFORMANCE CHARACTERISTICS [1]: TOP = –40°C to 150°C, VCC = 3.3 V, unless otherwise specified
Characteristic Symbol Test Conditions Min. Typ. Max. Unit
Primary Sampled Current IP –100 – 100 A
SensTA Full scale of IP applied for 5 ms, TA = 25°C – 13.2 – mV/A
Sensitivity Sens(TOP)HT Full scale of IP applied for 5 ms, TOP = 25°C to 150°C – 13.2 – mV/A
Sens(TOP)LT Full scale of IP applied for 5 ms, TOP = –40°C to 25°C – 13 – mV/A
Noise [2] VNOISE TA= 25°C, 10 nF on VIOUT pin to GND – 4 – mV
Nonlinearity ELIN Up to full scale of IP , IP applied for 5 ms – <±1 – %
VOE(TA) IP = 0 A, TA = 25°C – ±5 – mV
Electrical Offset Voltage [3] VOE(TOP)HT IP = 0 A, TOP = 25°C to 150°C – ±10 – mV
VOE(TOP)LT IP = 0 A, TOP = –40°C to 25°C – ±25 – mV
Magnetic Offset Error IERROM IP = 0 A, TA = 25°C, after excursion of 100 A – 185 – mA
ETOT(HT) Over full scale of IP , IP applied for 5 ms, TOP = 25°C to 150°C – ±1.8 – %
Total Output Error [4]
ETOT(LT) Over full scale of IP , IP applied for 5 ms, TOP = –40°C to 25°C – ±4 – %
[1] See Characteristic Performance Data page for parameter distributions over temperature range.
[2] ±3 sigma noise voltage.
[3] V
OE(TOP) drift is referred to ideal VIOUT(Q)
= 1/2 VCC.
[4] Percentage of I . Output filtered.
P
7
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ACS759xCB Thermally Enhanced, Fully Integrated, Hall-Effect-Based Linear Current Sensor IC
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X150B PERFORMANCE CHARACTERISTICS [1]: TOP = –40°C to 125°C, VCC = 3.3 V, unless otherwise specified
Characteristic Symbol Test Conditions Min. Typ. Max. Unit
Primary Sampled Current IP –150 – 150 A
SensTA Full scale of IP applied for 5 ms, TA = 25°C – 8.7 – mV/A
Sensitivity Sens(TOP)HT Full scale of IP applied for 5 ms, TOP = 25°C to 125°C – 8.8 – mV/A
Sens(TOP)LT Full scale of IP applied for 5 ms, TOP = –40°C to 25°C – 8.6 – mV/A
Noise [2] VNOISE TA= 25°C, 10 nF on VIOUT pin to GND – 3 – mV
Nonlinearity ELIN Up to full scale of IP , IP applied for 5 ms – <±1 – %
VOE(TA) IP = 0 A, TA = 25°C – ±5 – mV
Electrical Offset Voltage [3] VOE(TOP)HT IP = 0 A, TOP = 25°C to 125°C – ±5 – mV
VOE(TOP)LT IP = 0 A, TOP = –40°C to 25°C – ±10 – mV
Magnetic Offset Error IERROM IP = 0 A, TA = 25°C, after excursion of 150 A – 235 – mA
ETOT(HT) Over full scale of IP , IP applied for 5 ms, TOP = 25°C to 125°C – ±2 – %
Total Output Error [4]
ETOT(LT) Over full scale of IP , IP applied for 5 ms, TOP = –40°C to 25°C – ±4 – %
[1] See Characteristic Performance Data page for parameter distributions over temperature range.
[2] ±3sigma noise voltage.
[3] V
OE(TOP) drift is referred to ideal VIOUT(Q) = /2 VCC.
1
[4] Percentage of I . Output filtered.
P
X200B PERFORMANCE CHARACTERISTICS1: TOP = –40°C to 85°C, VCC = 3.3 V, unless otherwise specified
Characteristic Symbol Test Conditions Min. Typ. Max. Unit
Primary Sampled Current IP –200 – 200 A
SensTA Full scale of IP applied for 5 ms, TA = 25°C – 6.6 – mV/A
Sensitivity Sens(TOP)HT Full scale of IP applied for 5 ms, TOP = 25°C to 85°C – 6.7 – mV/A
Sens(TOP)LT Full scale of IP applied for 5 ms, TOP = –40°C to 25°C – 6.5 – mV/A
Noise [2] VNOISE TA= 25°C, 10 nF on VIOUT pin to GND – 2 – mV
Nonlinearity ELIN Up to full scale of IP , IP applied for 5 ms – <±1 – %
VOE(TA) IP = 0 A, TA = 25°C – ±5 – mV
Electrical Offset Voltage [3] VOE(TOP)HT IP = 0 A, TOP = 25°C to 85°C – ±5 – mV
VOE(TOP)LT IP = 0 A, TOP = –40°C to 25°C – ±10 – mV
Magnetic Offset Error IERROM IP = 0 A, TA = 25°C, after excursion of 200 A – 268 – mA
ETOT(HT) Over full scale of IP , IP applied for 5 ms, TOP = 25°C to 85°C – ±2 – %
Total Output Error [4]
ETOT(LT) Over full scale of IP , IP applied for 5 ms, TOP = –40°C to 25°C – ±4 – %
[1] See Characteristic Performance Data page for parameter distributions over temperature range.
[2] ±3sigma noise voltage.
[3] V
OE(TOP) drift is referred to ideal VIOUT(Q) = /2 VCC .
1
[4] Percentage of I . Output filtered.
P
8
Allegro MicroSystems
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ACS759xCB Thermally Enhanced, Fully Integrated, Hall-Effect-Based Linear Current Sensor IC
with 100 µΩ Current Conductor and Optimized Performance at 3.3 V
Electrical Offset Voltage versus Ambient Temperature Sensitivity versus Ambient Temperature
40 27.5
30 27.0
Sens (mV/A)
20 26.5
VOE (mV)
10 26.0
0 25.5
-10 25.0
-20 24.5
–50 -25 0 25 50 75 100 125 150 –50 -25 0 25 50 75 100 125 150
TA (°C) TA (°C)
0.80 99.80
ESYM (%)
ELIN (%)
99.60
0.60 99.40
99.20
0.40 99.00
98.80
0.20
98.60
0 98.40
–50 -25 0 25 50 75 100 125 150 –50 -25 0 25 50 75 100 125 150
TA (°C) TA (°C)
Magnetic Offset Error versus Ambient Temperature Total Output Error versus Ambient Temperature
160 4
140
2
120
0
100
IERROM (mA)
ETOT (%)
80 -2
60
-4
40
-6
20
0 -8
–50 -25 0 25 50 75 100 125 150 –50 -25 0 25 50 75 100 125 150
TA (°C) TA (°C)
9
Allegro MicroSystems
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ACS759xCB Thermally Enhanced, Fully Integrated, Hall-Effect-Based Linear Current Sensor IC
with 100 µΩ Current Conductor and Optimized Performance at 3.3 V
Electrical Offset Voltage versus Ambient Temperature Sensitivity versus Ambient Temperature
30 13.8
25
13.6
20
Sens (mV/A)
15 13.4
VOE (mV)
10
13.2
5
0 13.0
-5 12.8
-10
12.6
-15
-20 12.4
–50 -25 0 25 50 75 100 125 150 –50 -25 0 25 50 75 100 125 150
TA (°C) TA (°C)
0.40 99.60
0.30 99.40
99.20
0.20
99.00
0.10
98.80
0 98.60
–50 -25 0 25 50 75 100 125 150 –50 -25 0 25 50 75 100 125 150
TA (°C) TA (°C)
Magnetic Offset Error versus Ambient Temperature Total Output Error versus Ambient Temperature
250 4
200 2
0
150
IERROM (mA)
ETOT (%)
-2
100
-4
50
-6
0 -8
–50 -25 0 25 50 75 100 125 150 –50 -25 0 25 50 75 100 125 150
TA (°C) TA (°C)
10
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ACS759xCB Thermally Enhanced, Fully Integrated, Hall-Effect-Based Linear Current Sensor IC
with 100 µΩ Current Conductor and Optimized Performance at 3.3 V
Electrical Offset Voltage versus Ambient Temperature Sensitivity versus Ambient Temperature
30 9.2
25
9.0
20
Sens (mV/A)
15 8.8
VOE (mV)
10
8.6
5
0 8.4
-5
8.2
-10
-15 8.0
–50 -25 0 25 50 75 100 125 150 –50 -25 0 25 50 75 100 125 150
TA (°C) TA (°C)
0.30 99.60
99.40
0.20
99.20
0.10
99.00
0 98.80
–50 -25 0 25 50 75 100 125 150 –50 -25 0 25 50 75 100 125 150
TA (°C) TA (°C)
Magnetic Offset Error versus Ambient Temperature Total Output Error versus Ambient Temperature
300 6
250 4
2
200
IERROM (mA)
0
ETOT (%)
150
-2
100
-4
50 -6
0 -8
–50 -25 0 25 50 75 100 125 150 –50 -25 0 25 50 75 100 125 150
TA (°C) TA (°C)
11
Allegro MicroSystems
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ACS759xCB Thermally Enhanced, Fully Integrated, Hall-Effect-Based Linear Current Sensor IC
with 100 µΩ Current Conductor and Optimized Performance at 3.3 V
Electrical Offset Voltage versus Ambient Temperature Sensitivity versus Ambient Temperature
25 6.9
20 6.8
15 6.7
Sens (mV/A)
10 6.6
VOE (mV)
5 6.5
0 6.4
-5 6.3
-10 6.2
-15 6.1
–60 -40 -20 0 20 40 60 80 100 –60 -40 -20 0 20 40 60 80 100
TA (°C) TA (°C)
100.10
ELIN (%)
0.30
0.25 100.00
0.20 99.90
0.15
99.80
0.10
0.05 99.70
0 99.60
–60 -40 -20 0 20 40 60 80 100 –60 -40 -20 0 20 40 60 80 100
TA (°C) TA (°C)
Magnetic Offset Error versus Ambient Temperature Total Output Error versus Ambient Temperature
350 4
300 2
250
0
IERROM (mA)
200
ETOT (%)
-2
150
-4
100
50 -6
0 -8
–60 -40 -20 0 20 40 60 80 100 –60 -45 -20 0 20 40 60 80 100
TA (°C) TA (°C)
12
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ACS759xCB Thermally Enhanced, Fully Integrated, Hall-Effect-Based Linear Current Sensor IC
with 100 µΩ Current Conductor and Optimized Performance at 3.3 V
2.988 µs 997 ns
t (2 µs/div.) t (2 µs/div.)
VCC
IP (20 A/div.)
VIOUT (1 V/div.)
(IP = 60 A DC)
3.960 µs
t (2 µs/div.) t (2 µs/div.)
13
Allegro MicroSystems
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ACS759xCB Thermally Enhanced, Fully Integrated, Hall-Effect-Based Linear Current Sensor IC
with 100 µΩ Current Conductor and Optimized Performance at 3.3 V
CHARACTERISTIC DEFINITIONS
Definitions of Accuracy Characteristics
Sensitivity (Sens). The change in device output in response to a The ratiometric change (%) in the quiescent voltage output is
1 A change through the primary conductor. The sensitivity is the defined as:
product of the magnetic circuit sensitivity (G / A) and the linear VIOUTQ(VCC) VIOUTQ(3.3V)
∆VIOUTQ(∆V) = × 100 (%)
IC amplifier gain (mV/G). The linear IC amplifier gain is pro- VCC 3.3 (V)
grammed at the factory to optimize the sensitivity (mV/A) for the
and the ratiometric change (%) in sensitivity is defined as:
half-scale current of the device.
Sens(VCC) Sens(3.3V)
Noise (VNOISE). The noise floor is derived from the thermal and ∆Sens(∆V) = × 100 (%)
shot noise observed in Hall elements. Dividing the noise (mV) VCC 3.3 (V)
by the sensitivity (mV/A) provides the smallest current that the Quiescent output voltage (VIOUT(Q)). The output of the device
device is able to resolve. when the primary current is zero. For bidirectional devices,
it nominally remains at VCC ⁄ 2. Thus, VCC = 3.3 V translates
Nonlinearity (ELIN). The degree to which the voltage output into VIOUT(QBI) = 1.65 V. For unidirectional devices, it nomi-
from the IC varies in direct proportion to the primary current nally remains at 0.1 × VCC. Thus, VCC = 3.3 V translates into
through its half-scale amplitude. Nonlinearity in the output can be VIOUT(QUNI) = 0.33 V. Variation in VIOUT(Q) can be attributed
attributed to the saturation of the flux concentrator approaching to the resolution of the Allegro linear IC quiescent voltage trim,
magnetic hysteresis, and thermal drift.
the half-scale current. The following equation is used to derive
the linearity: Electrical offset voltage (VOE). The deviation of the device out-
put from its ideal quiescent value of VCC ⁄ 2 for bidirectional and
{ [
100 1–
∆ gain × % sat ( VIOUT_half-scale amperes –VIOUT(Q) )
2 (VIOUT_quarter-scale amperes – VIOUT(Q) ) [{ 0.1 × VCC for unidirectional devices, due to nonmagnetic causes.
Magnetic offset error (IERROM). The magnetic offset is due to
where the residual magnetism (remnant field) of the core material. The
magnetic offset error is highest when the magnetic circuit has
∆ gain = the gain variation as a function of temperature changes been saturated, usually when the device has been subjected to a
from 25°C, full-scale or high-current overload condition. The magnetic offset
% sat = the percentage of saturation of the flux concentra- is largely dependent on the material used as a flux concentrator.
tor, which becomes significant as the current being sampled The larger magnetic offsets are observed at the lower operating
temperatures.
approaches half-scale ±IP , and
VIOUT_half-scale amperes = the output voltage (V) when the sampled Total Output Error (ETOT). The maximum deviation of the
current approximates half-scale ±IP . actual output from its ideal value, also referred to as accuracy,
illustrated graphically in the output voltage versus current chart
Symmetry (ESYM). The degree to which the absolute voltage on the following page.
output from the IC varies in proportion to either a positive or ETOT is divided into four areas:
negative half-scale primary current. The following equation is
• 0 A at 25°C. Accuracy at the zero current flow at 25°C,
used to derive symmetry: without the effects of temperature.
VIOUT_+ half-scale amperes – VIOUT(Q) • 0 A over Δ temperature. Accuracy at the zero current flow
VIOUT(Q) – VIOUT_–half-scale amperes
100 including temperature effects.
• Half-scale current at 25°C. Accuracy at the the half-scale
Ratiometry. The device features a ratiometric output. This current at 25°C, without the effects of temperature.
means that the quiescent voltage output, VIOUTQ, and the mag- • Half-scale current over Δ temperature. Accuracy at the half-
netic sensitivity, Sens, are proportional to the supply voltage, VCC. scale current flow including temperature effects.
14
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ACS759xCB Thermally Enhanced, Fully Integrated, Hall-Effect-Based Linear Current Sensor IC
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Accuracy
90 25°C Only
Bidirectional
Average
Transducer Output VIOUT
10
Accuracy
0 Over ∆Temp erature
t
Rise Time, tr
Accuracy
25°C Only
Propagation delay (tPROP). The time required for the device IP(min)
output to reflect a change in the primary current signal. Propaga- –IP (A) +IP (A)
tion delay is attributed to inductive loading within the linear IC Half Scale
IP(max)
package, as well as in the inductive loop formed by the primary
conductor geometry. Propagation delay can be considered as a 0A
90 Accuracy
Over ∆Temp erature
Accuracy
Transducer Output Increasing VIOUT(V) Over ∆Temp erature
0
Accuracy
t 25°C Only
Propagation Time, tPROP
Unidirectional
Average
VIOUT
Accuracy
Over ∆Temp erature
Accuracy
25°C Only
Full Scale
0A IP(max)
Decreasing VIOUT(V)
15
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ACS759xCB Thermally Enhanced, Fully Integrated, Hall-Effect-Based Linear Current Sensor IC
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Regulator
Clock/Logic
Low-Pass
Hall Element
Filter
Sample and
Anti-aliasing
Hold
Filter
Amp
16
Allegro MicroSystems
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ACS759xCB Thermally Enhanced, Fully Integrated, Hall-Effect-Based Linear Current Sensor IC
with 100 µΩ Current Conductor and Optimized Performance at 3.3 V
5 4
Ø 0.5 B
3 4
17.5 ±0.2
21.4
13.00 ±0.10
Branded
Face
4.40 ±0.10
Ø 0.8
NNNNNNN
7.00 ±0.10 TTT-AAA
LLLLLLL
A Dambar removal intrusion
B Perimeter through-holes recommended YYWW
17
Allegro MicroSystems
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ACS759xCB Thermally Enhanced, Fully Integrated, Hall-Effect-Based Linear Current Sensor IC
with 100 µΩ Current Conductor and Optimized Performance at 3.3 V
14.0 ±0.2
4.0 ±0.2
3.0 ±0.2
5 4
1.50 ±0.10
2.75 ±0.10
A NNNNNNN
TTT-AAA
23.50 ±0.5
LLLLLLL
13.00 ±0.10
YYWW
10.00 ±0.10
7.00 ±0.10
A Dambar removal intrusion
B Branding scale and appearance at supplier discretion
18
Allegro MicroSystems
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ACS759xCB Thermally Enhanced, Fully Integrated, Hall-Effect-Based Linear Current Sensor IC
with 100 µΩ Current Conductor and Optimized Performance at 3.3 V
REVISION HISTORY
Number Date Description
1 January, 2013 Update Isolation certifications and specifications; update to current terminology
2 April 8, 2015 Updated TUV certification and reformatted document
3 November 2, 2016 Updated PCB Layout Reference View in Package Outline Drawing on page 17
4 June 5, 2017 Updated product status
5 June 1, 2018 Updated recommended substitution
6 December 5, 2018 Updated TUV/UL Certification
7 May 31, 2019 Updated TUV certificate mark
8 February 3, 2020 Updated product status
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