PD - 9.

1562A

PRELIMINARY IRF9410
HEXFET® Power MOSFET
l Generation V Technology A
A
1 8
l Ultra Low On-Resistance S D
l N-Channel MOSFET 2 7
VDSS = 30V
S D
l Surface Mount 3 6
S D
l Very Low Gate Charge and
4
Switching Losses G 5
D RDS(on) = 0.030Ω
l Fully Avalanche Rated
T o p V ie w

Description Recommended upgrade: IRF7403 or IRF7413

Fifth Generation HEXFETs from International Rectifier Lower profile/smaller equivalent: IRF7603
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of S O -8
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.

Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)

Symbol Maximum Units
Drain-Source Voltage VDS 30
V
Gate-Source Voltage VGS ± 20
TA = 25°C 7.0
Continuous Drain Current… ID
TA = 70°C 5.8
A
Pulsed Drain Current IDM 37
Continuous Source Current (Diode Conduction) IS 2.8
TA = 25°C 2.5
Maximum Power Dissipation … PD W
TA = 70°C 1.6
Single Pulse Avalanche Energy ‚ EAS 70 mJ
Avalanche Current IAR 4.2 A
Repetitive Avalanche Energy EAR 0.25 mJ
Peak Diode Recovery dv/dt ƒ dv/dt 5.0 V/ ns
Junction and Storage Temperature Range TJ, TSTG -55 to + 150 °C

Thermal Resistance Ratings

Parameter Symbol Limit Units
Maximum Junction-to-Ambient … RθJA 50 °C/W

9/15/97
IRF9410
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.024 ––– V/°C Reference to 25°C, ID = 1mA
––– 0.024 0.030 VGS = 10V, ID = 7.0A „
RDS(on) Static Drain-to-Source On-Resistance ––– 0.032 0.040 Ω VGS = 5.0V, ID = 4.0A „
––– 0.037 0.050 VGS = 4.5V, ID = 3.5A „
VGS(th) Gate Threshold Voltage 1.0 ––– ––– V VDS = VGS, ID = 250µA
gfs Forward Transconductance ––– 14 ––– S VDS = 15V, I D = 7.0A
––– ––– 2.0 VDS = 24V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 25 VDS = 24V, VGS = 0V, T J = 55°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Qg Total Gate Charge ––– 18 27 ID = 2.0A
Qgs Gate-to-Source Charge ––– 2.4 3.6 nC VDS = 15V
Qgd Gate-to-Drain ("Miller") Charge ––– 4.9 7.4 VGS = 10V, See Fig. 10 „
td(on) Turn-On Delay Time ––– 7.3 15 VDD = 25V
tr Rise Time ––– 8.3 17 ID = 1.0A
ns
td(off) Turn-Off Delay Time ––– 23 46 RG = 6.0Ω, VGS = 10V
tf Fall Time ––– 17 34 RD = 25Ω „
Ciss Input Capacitance ––– 550 ––– VGS = 0V
Coss Output Capacitance ––– 260 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 100 ––– ƒ = 1.0MHz, See Fig. 9

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
D
IS Continuous Source Current MOSFET symbol
––– ––– 2.8
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G

––– ––– 37
(Body Diode)  p-n junction diode. S

VSD Diode Forward Voltage ––– 0.78 1.0 V TJ = 25°C, I S = 2.0A, VGS = 0V ƒ
trr Reverse Recovery Time ––– 40 80 ns TJ = 25°C, I F = 2.0A
Qrr Reverse RecoveryCharge ––– 63 130 nC di/dt = 100A/µs ƒ

Notes:
 Repetitive rating; pulse width limited by ƒ ISD ≤ 4.6A, di/dt ≤ 120A/µs, VDD ≤ V(BR)DSS,
max. junction temperature. ( See fig. 11 ) TJ ≤ 150°C
‚ Starting TJ = 25°C, L = 6.6mH „ Pulse width ≤ 300µs; duty cycle ≤ 2%.
RG = 25Ω, IAS = 4.6A.

… Surface mounted on FR-4 board, t ≤ 10sec.

 IRF9410

100 100
VGS VGS
TOP 15V TOP 15V
10V 10V
7.0V 7.0V
5.5V 5.5V
4.5V 4.5V
I D , Dra in-to -S o u rce Cu rre n t (A )

I D , Dra in-to -S o u rce Cu rre n t (A)

4.0V 4.0V
3.5V 3.5V
BOTT OM 3.0V BOTT OM 3.0V

10 10

3.0V

3.0 V
20 µs P U LSE W IDTH 20 µs P U LSE W IDTH
TJ = 25 °C A TJ = 15 0°C A
1 1
0.1 1 10 0.1 1 10
V D S , D rain-to-S ource V oltage (V ) V D S , D rain-to-S ource Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

100 100
I S D , R e v e rse D ra in C u rre n t (A )
I D , D r ain- to-S ourc e C urre nt (A )

T J = 2 5 °C
10
TJ = 1 5 0 °C
TJ = 1 50 °C

10
TJ = 2 5°C

VD S = 1 0 V
2 0 µ s PU L SE W ID TH VG S = 0 V
1 0.1 A
A
3.0 3.5 4.0 4.5 5.0 5.5 0.4 0.6 0.8 1.0 1.2

V G S , Ga te-to-S o urce V oltage (V ) V S D , S ource-to-Drain Voltage (V )

Fig 3. Typical Transfer Characteristics Fig 4. Typical Source-Drain Diode

Forward Voltage
IRF9410

2.0 0.05
ID = 7.0A

( Ω)
R DS(on) , Drain-to-Source On Resistance

1.5

R D S ( o n ), Drain-to-Source On Resistance
0.04
(Normalized)

VG S = 4.5V

1.0

0.03

0.5

V G S = 10V
VGS = 10V
0.0 0.02 A
-60 -40 -20 0 20 40 60 80 100 120 140 160 0 5 10 15 20 25
TJ , Junction Temperature ( °C)
I D , Drain Current (A)

Fig 5. Normalized On-Resistance Fig 6. Typical On-Resistance Vs. Drain

Vs. Temperature Current

0.14 200
I D
RDS (on) , Drain-to-Source On Resistance (Ω)

TOP 2.1A
0.12
3.7A
BOTTOM 4.6A
E A S , Single Pulse Avalanche Energy (mJ)

160

0.10

120
0.08

0.06
80

0.04
I D = 7.0A
40
0.02

0.00 A 0 A
3 6 9 12 15 25 50 75 100 125 150
V G S - Gate-to-Source V olta ge (V ) Starting T ,JJunction Temperature (°C)

Fig 7. Typical On-Resistance Vs. Gate Fig 8. Maximum Avalanche Energy

Voltage Vs. Drain Current
 IRF9410

1000 20
V GS = 0 V, f = 1M H z ID = 2.0A
C is s = C gs + C gd , Cds SH O RTE D VDS = 15V
C rs s = C gd

VGS, Gate-to-Source Voltage (V)

800 C o ss = C ds + C g d 16
C , C a p a c ita n c e (p F )

C i ss
600 12

Coss
400 8

200 C rs s 4

0 A 0
1 10 100 0 6 12 18 24 30
V D S , Drain-to-Source V oltage (V) Q G, Total Gate Charge (nC)

Fig 9. Typical Capacitance Vs. Fig 10. Typical Gate Charge Vs.
Drain-to-Source Voltage Gate-to-Source Voltage

100
Thermal Response (Z thJA )

0.50

10 0.20

0.10

0.05

PDM
0.02
1
t1
0.01
t2

Notes:
SINGLE PULSE
1. Duty factor D = t 1 / t 2
(THERMAL RESPONSE)
2. Peak T J = P DM x Z thJA + TA
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10 100
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

IRF9410
Package Outline
SO8 Outline

IN C H E S M IL L IM E T E R S
D D IM
5
M IN MAX M IN M AX
-B -
A .0 5 3 2 .0688 1 .3 5 1 .7 5
A1 .0 0 4 0 .0098 0 .1 0 0 .2 5
8 7 6 5
5 B .0 1 4 .018 0 .3 6 0 .4 6
E H
-A - 0.25 (.01 0) M A M C .0 0 7 5 .0 09 8 0 .1 9 0 .2 5
1 2 3 4
D .1 8 9 .1 96 4 .8 0 4 .9 8
E .1 5 0 .157 3 .8 1 3 .9 9
e e .0 5 0 B A S IC 1 .2 7 B A S IC
6X θ K x 45°
e1 e1 .0 2 5 B A S IC 0 .6 3 5 B A S IC
θ
H .2 2 8 4 .2 44 0 5 .8 0 6 .2 0
A
K .0 1 1 .019 0 .2 8 0 .4 8
-C - 0.10 (.0 04) L 6 C
A1 L 0 .1 6 .0 5 0 0 .4 1 1 .2 7
B 8X 8X 8X
θ 0° 8° 0° 8°
0.25 ( .010) M C A S B S
RE CO MM EN DE D F O O T PR INT
N OT E S :
1. D IME NS IO NING AND T O LE RA NCING PE R A NS I Y 14.5M- 1982. 0.72 (.028 )
8X
2. C O NT RO LLING D IME NS IO N : IN CH.
3. D IME NS IO NS A RE S HO W N IN M ILLIME T ER S (INC HE S) .
4. O U TLIN E CO NF O RM S T O JE DE C O U TLINE MS -01 2AA .
6.46 ( .255 ) 1.78 (.07 0)
5 DIM ENS IO N DO ES NO T INCLU DE M OL D P RO T RUS IO NS
8X
MO LD PR O TRU SIO NS NO T T O E XCEE D 0.25 (.006).
6 DIM ENS IO NS IS T H E LE NG T H O F LE AD F O R SO LDE RIN G T O A S UB ST RA T E..
1.27 ( .0 50 )
3X

Part Marking Information

SO8

E X A M P LE : TH IS IS A N IR F 7 101

D A T E C O D E (Y W W )
Y = LA S T D IG IT O F T H E YE A R
W W = W EEK
3 12
IN T E R N A TI ON A L XX X X
F 7 101
R E C T IF IE R W AFER
LO G O LO T C O D E
PART NUMBER
T OP (LA S T 4 D IG IT S ) B O T TO M
 IRF9410
Tape & Reel Information
SO8
Dimensions are shown in millimeters (inches)

T E R M IN A L N U M BE R 1

1 2. 3 ( .48 4 )
1 1. 7 ( .46 1 )

8 .1 ( .3 18 )
7 .9 ( .3 12 ) F E E D D IR E C T IO N

N O TE S :
1 . CO NTR O LL IN G DIM EN S IO N : M ILL IM E TE R.
2 . A LL D IM E NS IO NS AR E S HO W N IN M ILL IM E TE R S( IN CH ES ) .
3 . O U TLINE C O N FO RM S TO E IA -4 81 & E IA - 54 1.

3 30 .00
(12 .9 92 )
MAX.

1 4.4 0 ( .5 66 )
1 2.4 0 ( .4 88 )
N O T ES :
1. C O N T R O LL IN G D IM E N S IO N : M IL L IM E T E R .
2. O U T LIN E C O N F O R M S T O E IA -48 1 & EIA -5 41 .

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http://www.irf.com/ Data and specifications subject to change without notice. 9/97