PD -91859

IRF7342
HEXFET® Power MOSFET
l Generation V Technology
1
l Ultra Low On-Resistance S1
8
D1

l Dual P-Channel Mosfet G1

2 7
D1
VDSS = -55V
l Surface Mount 3 6
S2 D2
l Available in Tape & Reel
4 5
G2 D2
l Dynamic dv/dt Rating RDS(on) = 0.105Ω
l Fast Switching
T op V iew
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and S O -8
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
Absolute Maximum Ratings
Parameter Max. Units
VDS Drain- Source Voltage -55 V
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V -3.4
ID @ TC = 70°C Continuous Drain Current, VGS @ 10V -2.7 A
IDM Pulsed Drain Current  -27
PD @TC = 25°C Power Dissipation 2.0
W
PD @TC = 70°C Power Dissipation 1.3
Linear Derating Factor 0.016 W/°C
VGS Gate-to-Source Voltage ± 20 V
VGSM Gate-to-Source Voltage Single Pulse tp<10µs 30 V
EAS Single Pulse Avalanche Energy‚ 114
dv/dt Peak Diode Recovery dv/dt ƒ 5.0 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C

Thermal Resistance
Parameter Typ. Max. Units
RθJA Maximum Junction-to-Ambient… ––– 62.5 °C/W
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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -55 ––– ––– V VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.054 ––– V/°C Reference to 25°C, ID = -1mA
––– 0.095 0.105 VGS = -10V, ID = -3.4A „
RDS(on) Static Drain-to-Source On-Resistance Ω
––– 0.150 0.170 VGS = -4.5V, I D = -2.7A „
VGS(th) Gate Threshold Voltage -1.0 ––– ––– V VDS = VGS, ID = -250µA
gfs Forward Transconductance 3.3 ––– ––– S VDS = -10V, ID = -3.1A
––– ––– -2.0 VDS = -55V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– -25 VDS = -55V, VGS = 0V, TJ = 55°C
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V
Qg Total Gate Charge ––– 26 38 ID = -3.1A
Qgs Gate-to-Source Charge ––– 3.0 4.5 nC VDS = -44V
Qgd Gate-to-Drain ("Miller") Charge ––– 8.4 13 VGS = -10V, See Fig. 10 „
td(on) Turn-On Delay Time ––– 14 22 VDD = -28V
tr Rise Time ––– 10 15 ID = -1.0A
ns
td(off) Turn-Off Delay Time ––– 43 64 RG = 6.0Ω
tf Fall Time ––– 22 32 RD = 16Ω, „
Ciss Input Capacitance ––– 690 ––– VGS = 0V
Coss Output Capacitance ––– 210 ––– pF VDS = -25V
Crss Reverse Transfer Capacitance ––– 86 ––– ƒ = 1.0MHz, See Fig. 9

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
D
IS Continuous Source Current MOSFET symbol
––– ––– -2.0
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G

––– ––– -27

(Body Diode)  p-n junction diode. S

VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.0A, VGS = 0V ƒ
trr Reverse Recovery Time ––– 54 80 ns TJ = 25°C, IF = -2.0A
Qrr Reverse RecoveryCharge ––– 85 130 nC di/dt = -100A/µs ƒ

Notes:
 Repetitive rating; pulse width limited by ƒ ISD ≤ -3.4A, di/dt ≤ -150A/µs, VDD ≤ V(BR)DSS,
max. junction temperature. ( See fig. 11 ) TJ ≤ 150°C
‚ Starting TJ = 25°C, L = 20mH „ Pulse width ≤ 300µs; duty cycle ≤ 2%.
RG = 25Ω, IAS = -3.4A. (See Figure 8)
… When mounted on 1 inch square copper board, t<10 sec

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100 VGS
100 VGS
TOP -15V TOP -15V
-12V -12V
-10V -10V
-I D , Drain-to-Source Current (A)

-I D , Drain-to-Source Current (A)

-8.0V -8.0V
-6.0V
-4.5V -6.0V
-4.5V
-4.0V -4.0V
-3.5V -3.5V
BOTTOM -3.0V BOTTOM -3.0V
10 10

-3.0V
-3.0V
1 1

20µs PULSE WIDTH 20µs PULSE WIDTH

TJ = 25 ° C TJ = 150 °C
0.1 0.1
0.1 1 10 100 0.1 1 10 100
-VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

100 100
-I D , Drain-to-Source Current (A)

-ISD , Reverse Drain Current (A)

TJ = 25 ° C 10

TJ = 150 ° C
TJ = 150 ° C
10

TJ = 25 ° C
1

V DS = -25V
20µs PULSE WIDTH V GS = 0 V
1 0.1
3 4 5 6 7 0.2 0.4 0.6 0.8 1.0 1.2 1.4
-VGS , Gate-to-Source Voltage (V) -VSD ,Source-to-Drain Voltage (V)

Fig 3. Typical Transfer Characteristics Fig 4. Typical Source-Drain Diode

Forward Voltage

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2.0 0.240
ID = -3.4 A

R DS (on), Drain-to-Source On Resistance (Ω)

R DS(on) , Drain-to-Source On Resistance

1.5 0.200
(Normalized)

VGS = -4.5V

1.0 0.160

0.5 0.120
VGS = -10V

VGS = -10V
0.0 0.080
-60 -40 -20 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 12
TJ , Junction Temperature ( °C) -I D , Drain Current (A)

Fig 5. Normalized On-Resistance Fig 6. Typical On-Resistance Vs. Drain

Vs. Temperature Current

0.45 300
ID
RDS(on) , Drain-to-Source On Resistance ( Ω )

EAS , Single Pulse Avalanche Energy (mJ)

TOP -1.5A
250 -2.7A
BOTTOM -3.4A
0.35

200

0.25 150

I D = -3.4 A
100
0.15

50

0.05 A 0
2 5 8 11 14 25 50 75 100 125 150
Starting TJ , Junction Temperature ( ° C)
-V G S , G ate-to-S ource V oltage (V)

Fig 7. Typical On-Resistance Vs. Gate Fig 8. Maximum Avalanche Energy

Voltage Vs. Drain Current

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1200 20
VGS = 0V, f = 1MHz ID = -3.1A
Ciss = Cgs + Cgd , Cds SHORTED VDS = -48V
Crss = Cgd VDS = -30V

-VGS , Gate-to-Source Voltage (V)

960 Coss = Cds + Cgd 16 VDS = -12V
C, Capacitance (pF)

Ciss
720 12

480 8

Coss
240 4
Crss

0 0
1 10 100 0 10 20 30 40
--VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC)

Fig 9. Typical Capacitance Vs. Fig 10. Typical Gate Charge Vs.
Drain-to-Source Voltage Gate-to-Source Voltage

100

D = 0.50
Thermal Response (Z thJA )

0.20
10
0.10

0.05

0.02 PDM
1 0.01
t1
SINGLE PULSE
(THERMAL RESPONSE) t2

Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.1
0.0001 0.001 0.01 0.1 1 10 100
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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SO-8 Package Details

IN C H E S M IL LIM E T E R S
D D IM
5
M IN MAX M IN M AX
-B -
A .0532 .0688 1 .35 1 .75
θ A1 .0040 .0098 0 .10 0 .25
8 7 6 5
5 B .014 .018 0 .36 0 .46
E H
-A - 0.2 5 (.0 10 ) M A M C .0 075 .0 098 0 .19 0.25
1 2 3 4
D .1 89 .1 96 4 .80 4.98
E .150 .157 3 .81 3 .99
e e .050 B A S IC 1.2 7 B A S IC
6X θ K x 45 °
e1 e1 .025 B A S IC 0.6 35 B A S IC
H .2 284 .2 440 5 .80 6.20
A
K .011 .019 0 .28 0 .48
-C- 0 .10 (.00 4) L 6 C
A1 L 0 .16 .050 0 .41 1.27
B 8X 8X 8X
θ 0° 8° 0° 8°
0 .25 (.01 0) M C A S B S
R E CO M M E ND E D F O O TP R IN T
N O TE S :
1 . D IM EN SIO N IN G AN D TO L ER A NC IN G P ER AN S I Y1 4.5 M -198 2. 0 .72 (.02 8 )
8X
2 . C O N TRO L LIN G D IM EN SIO N : IN C H .
3 . D IM EN SIO N S A RE SH O W N IN M ILLIM E TE R S (IN C HE S).
4 . O U TLIN E CO N F O RM S TO JED E C O U TLINE M S -0 12 AA .
6 .46 ( .25 5 ) 1 .78 (.07 0)
5 D IM E NS IO N D O ES N O T IN C LU D E M O LD PR O TR US IO N S 8X
M O LD P R O TR U SIO NS N O T TO EXCE ED 0 .2 5 (.00 6).
6 D IM E NS IO N S IS TH E LE N G TH O F L EA D FO R SO L DE R IN G TO A SU B STRA TE..
1.27 ( .0 50 )
3X

Part Marking

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Tape and Reel
T E R M IN A L N U M B E R 1

1 2 .3 ( .48 4 )
1 1 .7 ( .46 1 )

8 .1 ( .31 8 )
7 .9 ( .31 2 ) F E E D D IR E C T IO N

N O TES:
1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ).
3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1.

33 0.0 0
(1 2 .9 9 2 )
M AX .

1 4 .4 0 ( .5 66 )
1 2 .4 0 ( .4 88 )
N O TE S :
1. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
2. O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 .

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http://www.irf.com/ Data and specifications subject to change without notice. 2/99
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