BLP15H9S100

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BLP15H9S100

Power LDMOS transistor


Rev. 4 — 12 January 2023 Product data sheet

1. Product profile

1.1 General description


A 100 W LDMOS driver transistor for broadcast and industrial applications. The excellent
ruggedness of this device makes it ideal for digital and analog transmitter applications in
the frequency range from HF to 2 GHz.

Table 1. Typical performance


Test signal f VDS PL Gp D
(MHz) (V) (W) (dB) (%)
pulsed RF 1400 50 100 20 62
1700 to 1850 50 100 16 50
CW 325 to 352 50 90 25 61
360 to 450 50 100 16 53
DVB-T 169 to 223 50 20 23 30
470 to 700 50 20 20 30

1.2 Features and benefits


 Designed for broadband operation
 High efficiency
 Integrated dual sided ESD protection
 Excellent ruggedness
 High power gain
 Excellent reliability
 Easy power control
 Excellent stability
 For RoHS compliance see the product details on the Ampleon website

1.3 Applications
 Broadcast transmitter applications
 Industrial, scientific and medical applications
 Applicable at frequencies from HF to 2 GHz
BLP15H9S100
Power LDMOS transistor

2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 drain
2 1
2 gate
[1] 3
3 source
2
1 3
sym112

[1] Connected to flange.

3. Ordering information
Table 3. Ordering information
Package name Orderable part number 12NC Packing description Min. orderable
quantity (pieces)
TO-270-2F-1 BLP15H9S100Z 9349 602 50515 TR13; 500-fold; 24 mm; dry pack 500
BLP15H9S100XY 9349 602 50538 TR7; 100-fold; 24 mm; dry pack 100

4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 106 V
VGS gate-source voltage 6 +11 V
Tstg storage temperature 65 +150 C
Tj junction temperature [1] - 225 C

[1] Continuous use at maximum temperature will affect the reliability, for details refer to the online MTF
calculator.

5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Typ Unit
Rth(j-c) thermal resistance from junction to case Tcase = 70 C; VDS = 50 V; 0.57 K/W
PL = 100 W

BLP15H9S100 All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2023. All rights reserved.

Product data sheet Rev. 4 — 12 January 2023 2 of 14


BLP15H9S100
Power LDMOS transistor

6. Characteristics
Table 6. DC characteristics
Tj = 25 C; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.67 mA 106 - - V
VGS(th) gate-source threshold voltage VDS = 10 V; ID = 67 mA 1.5 2.0 2.5 V
VGSq gate-source quiescent voltage VDS = 50 V; ID = 30 mA 1.5 2.0 2.5 V
IDSS drain leakage current VGS = 0 V; VDS = 50 V - - 1.4 A
IDSX drain cut-off current VGS = VGS(th) + 3.75 V; - 11.3 - A
VDS = 10 V
IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 140 nA
RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; - 0.30 - 
ID = 2.35 A

Table 7. RF characteristics
Test signal: pulsed RF; tp = 100 s;  = 20 %; f = 1400 MHz; RF performance at VDS = 50 V;
IDq = 30 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit with
Johnstech socket.
Symbol Parameter Conditions Min Typ Max Unit
Gp power gain PL = 100 W 18 19 - dB
RLin input return loss PL = 100 W - 14 6 dB
D drain efficiency PL = 100 W 59 63 - %

Table 8. AC characteristics
Tj = 25 C; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Ciss input capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz - 75 - pF
Coss output capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz - 23.4 - pF
Crss reverse transfer capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz - 0.53 - pF

BLP15H9S100 All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2023. All rights reserved.

Product data sheet Rev. 4 — 12 January 2023 3 of 14


BLP15H9S100
Power LDMOS transistor

amp01422
120
Coss
(pF)
100

80

60

40

20

0
0 10 20 30 40 50 60 70
VDS (V)

VGS = 0 V; f = 1 MHz.
Fig 1. Output capacitance as a function of drain-source voltage; typical values per
section

7. Test information

7.1 Ruggedness in class-AB operation


The BLP15H9S100 is capable of withstanding a load mismatch corresponding to
VSWR = 30 : 1 through all phases under the following conditions: VDS = 55 V;
IDq = 30 mA; PL = 120 W; f = 1400 MHz; pulsed CW (tp = 100 s;  = 20 %).

BLP15H9S100 All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2023. All rights reserved.

Product data sheet Rev. 4 — 12 January 2023 4 of 14


BLP15H9S100
Power LDMOS transistor

7.2 Test circuit

106 mm

-
R1 C3 C11 R2 R3
L1 +
C13
C2
C4 C12
C6 C8

C1 C10
60 mm
C5 C7 C9

amp01423
14.0 mm 6.0 mm
9.0 mm
11.0 mm

Printed-Circuit Board (PCB): Rogers RO4350; thickness = 0.762 mm.


See Table 9 for a list of components.
Fig 2. Component layout for class-AB production test circuit

Table 9. List of components


For test circuit see Figure 2.
Component Description Value Remarks
C1 multilayer ceramic chip capacitor 2.2 pF [1]

C2, C12 multilayer ceramic chip capacitor 4.7 F, 100 V


C3, C11 multilayer ceramic chip capacitor 30 pF [1]

C4, C5 multilayer ceramic chip capacitor 2.7 pF [1]

C6, C7 multilayer ceramic chip capacitor 6.8 pF [1]

C8, C9 multilayer ceramic chip capacitor 3.3 pF [1]

C10 multilayer ceramic chip capacitor 20 pF [1]

C13 electrolytic capacitor 470 F, 64 V


R1 chip resistor 4.7  SMD 1206
R2 chip resistor 10  SMD 1206
R3 shunt resistor 0.01 
L1 inductor 9 nH Coilcraft: 1508-9N0GLB

[1] American Technical Ceramics type 800A or capacitor of same quality.

BLP15H9S100 All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2023. All rights reserved.

Product data sheet Rev. 4 — 12 January 2023 5 of 14


BLP15H9S100
Power LDMOS transistor

7.3 Graphical data

7.3.1 Pulsed CW performance measured in production RF test circuit

amp01424
22 70
Gp ηD ηD
(dB) (%)
21 60

20 50
Gp

19 40

18 30

17 20

16 10
0 20 40 60 80 100 120
PL (W)

VDS = 50 V; IDq =30 mA; f = 1400 MHz; tp = 100 s; VDS = 50 V; IDq = 30 mA; f = 1400 MHz; tp = 100 s;
 = 20 %.  = 20 %.
(1) PL(1dB) = 50.2 dBm (104 W)
(2) PL(3dB) = 50.6 dBm (116 W)
Fig 3. Power gain and drain efficiency as function of Fig 4. Output power as a function of input power;
output power; typical values typical values

BLP15H9S100 All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2023. All rights reserved.

Product data sheet Rev. 4 — 12 January 2023 6 of 14


BLP15H9S100
Power LDMOS transistor

amp01426 amp01427
25 (7)
80
Gp (6) ηD
(dB) (5) (%)
(4)
23 (3)
(2) 60
(1)

21 (1)
(2)
40 (3)
(4)
19 (5)
(6)
(7)
20
17

15 0
0 20 40 60 80 100 120 0 20 40 60 80 100 120
PL (W) PL (W)

VDS = 50 V; f = 1400 MHz; tp = 100 s;  = 20 %. VDS = 50 V; f = 1400 MHz; tp = 100 s;  = 20 %.
(1) IDq = 10 mA (1) IDq = 10 mA
(2) IDq = 30 mA (2) IDq = 30 mA
(3) IDq = 60 mA (3) IDq = 60 mA
(4) IDq = 100 mA (4) IDq = 100 mA
(5) IDq = 200 mA (5) IDq = 200 mA
(6) IDq = 300 mA (6) IDq = 300 mA
(7) IDq = 400 mA (7) IDq = 400 mA
Fig 5. Power gain as a function of output power; Fig 6. Drain efficiency as a function of output power;
typical values typical values

BLP15H9S100 All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2023. All rights reserved.

Product data sheet Rev. 4 — 12 January 2023 7 of 14


BLP15H9S100
Power LDMOS transistor

amp01428 amp01429
23 80
Gp ηD
(dB) (%)
(1)
21 (2)
(3)
60 (4)
(5)

19 (6)

40
(3) (2) (1)
17 (4)
(5)

(6)
20
15

13 0
0 20 40 60 80 100 120 0 20 40 60 80 100 120
PL (W) PL (W)

IDq = 30 mA; f = 1400 MHz; tp = 100 s;  = 20 %. IDq = 30 mA; f = 1400 MHz; tp = 100 s;  = 20 %.
(1) VDS = 50 V (1) VDS = 50 V
(2) VDS = 45 V (2) VDS = 45 V
(3) VDS = 40 V (3) VDS = 40 V
(4) VDS = 35 V (4) VDS = 35 V
(5) VDS = 30 V (5) VDS = 30 V
(6) VDS = 25 V (6) VDS = 25 V
Fig 7. Power gain as a function of output power; Fig 8. Drain efficiency as a function of output power;
typical values typical values

BLP15H9S100 All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2023. All rights reserved.

Product data sheet Rev. 4 — 12 January 2023 8 of 14


BLP15H9S100
Power LDMOS transistor

8. Package outline

TO-270-2F-1

4.95 (#2) L 0.25 A 0.24 B 0.025

0.5 B0.1

1.78 B0.1 (#4)


L 0.2 B B
1.57

11.16 B0.1

6.1 (#1)

5.92
#6
#6
(1.2)

(1) PIN 1 1.04

10.67 B0.1 (#4)


2.03

#6
A 9.65 (#1)

(0.2)

Compound allowed
3.8 min. 4.5 max.

Flash/bleed allowed
hatched area (2x)
Exposed Heatsink

7.4 min. 8.7 max.

Package outline drawing: Tolerances unless otherwise stated: Revision: 0


Dimension: B 0.05 Angle: B 1° Revision date: 11/7/2022
units in mm.
TO-270-2F-1
Third angle projection Sheet 1 of 2

Fig 9. Package outline TO-270-2F-1 (sheet 1 of 2)


BLP15H9S100 All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2023. All rights reserved.

Product data sheet Rev. 4 — 12 January 2023 9 of 14


BLP15H9S100
Power LDMOS transistor

TO-270-2F-1

Drawing Notes

Items Description

Dimensions are excluding mold protrusion. The mold protrusion is maximum 0.15 mm per side. See also detail B.
(1)
In the dambar area max. protrusion is 0.55 mm. max. in length and 0.3 mm. max. in width (4x). See also detail B.

(2) The lead dambar (metal) protrusions are not included. Add 0.14 mm max to the total lead dimension at the dambar location.

(3) The leads and exposed heatsink are plated with matte Tin (Sn).

Dimensions (Heatsink ears) 10,67 and 1,78 do not include mouldprotrusion. Overall Max. dimensions incl. mould
(4)
protrusions is 10.92 mm. (max.) and 2.03 mm. (max.).

(5) Lead coplanarity over the leads is 0,1 mm. maximum.

(6) Surfaces may remain unplated (not solderable surfaces).

DETAIL B
SCALE 50 : 1
x.)
(0.3 ma
B
(0.
55
ma
x.)

Lead Dambar protrusion (#2)


)
ax. (#1
0.15 m

Package outline drawing: Tolerances unless otherwise stated: Revision: 0


Dimension: B 0.05 Angle: B 1° Revision date: 11/7/2022
units in mm.
TO-270-2F-1
Third angle projection Sheet 2 of 2

Fig 10. Package outline TO-270-2F-1 (sheet 2 of 2)


BLP15H9S100 All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2023. All rights reserved.

Product data sheet Rev. 4 — 12 January 2023 10 of 14


BLP15H9S100
Power LDMOS transistor

9. Handling information

CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.

Table 10. ESD sensitivity


ESD model Class
Charged Device Model (CDM); According to ANSI/ESDA/JEDEC standard JS-002 C2B [1]
Human Body Model (HBM); According to ANSI/ESDA/JEDEC standard JS-001 2 [2]

[1] CDM classification C2B is granted to any part that passes after exposure to an ESD pulse of 750 V.
[2] HBM classification 2 is granted to any part that passes after exposure to an ESD pulse of 2000 V.

10. Abbreviations
Table 11. Abbreviations
Acronym Description
CW Continuous Wave
DVB-T Digital Video Broadcast - Terrestrial
ESD ElectroStatic Discharge
HF High Frequency
LDMOS Laterally Diffused Metal-Oxide Semiconductor
MTF Median Time to Failure
RoHS Restriction of Hazardous Substances
SMD Surface Mounted Device
VSWR Voltage Standing Wave Ratio

11. Revision history


Table 12. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BLP15H9S100 v.4 20230112 Product data sheet - BLP15H9S100 v.3
Modifications: • Table 3 on page 2: package name changed from SOT1482-1 to TO-270-2F-1
• Table 5 on page 2: value changed from 0.67 K/W to 0.57 K/W
• Section 8 on page 9: package outline drawing changed from SOT1482-1 to TO-270-2F-1
• Section 12 on page 12: updated section
BLP15H9S100 v.3 20210708 Product data sheet - BLP15H9S100 v.2
BLP15H9S100 v.2 20201210 Product data sheet - BLP15H9S100 v.1
BLP15H9S100 v.1 20200807 Product data sheet - -

BLP15H9S100 All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2023. All rights reserved.

Product data sheet Rev. 4 — 12 January 2023 11 of 14


BLP15H9S100
Power LDMOS transistor

12. Legal information

12.1 Data sheet status


Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.ampleon.com.

12.2 Definitions Right to make changes — Ampleon reserves the right to change
information including but without limitation specifications and product
descriptions published in this document at any time and without notice. This
Draft — The document is a draft version only. The content is still under
document supersedes and replaces all information regarding these products
internal review and subject to formal approval, which may result in
supplied prior to the publication hereof.
modifications or additions. Ampleon does not give any representations or
warranties as to the accuracy or completeness of information included herein Suitability for use — Ampleon products are not designed, authorized or
and shall have no liability for the consequences of use of such information. warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction of an
Short data sheet — A short data sheet is an extract from a full data sheet
Ampleon product can reasonably be expected to result in personal injury,
with the same product type number(s) and title. A short data sheet is intended
death or severe property or environmental damage. Insofar as a customer or
for quick reference only and should not be relied upon to contain detailed and
another party nevertheless uses Ampleon products unlawfully for such
full information. For detailed and full information see the relevant full data
purposes, Ampleon and its suppliers are not liable for any damages.
sheet, which is available on request via the local Ampleon sales office. In
case of any inconsistency or conflict with the short data sheet, the full data Applications — Applications that are described herein for any of these
sheet shall prevail. products are for illustrative purposes only. Ampleon makes no representation
or warranty that such applications will be suitable for the specified use without
Product specification — The information and data provided in a Product
further testing or modification.
data sheet shall define the specification of the product as agreed between
Ampleon and its customer, unless Ampleon and customer have explicitly Customers are responsible for the design and operation of their applications
agreed otherwise in writing. An agreement according to which the functions and products using Ampleon products, and Ampleon is not liable for any
and qualities of Ampleon products exceed those described in the Product assistance with applications or customer product design. It is customer’s sole
data sheet is invalid. responsibility to determine whether the Ampleon product is suitable and fit for
the customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers shall
12.3 Disclaimers provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
Maturity — After the relevant product(s) have passed the Release Gate in Ampleon is not liable related to any default, damage, costs or problem which
Ampleon's release process, Ampleon will confirm the final version in writing. is based on any weakness or default in the customer’s applications or
products, or the application or use by customer’s third party customer(s).
Limited warranty and liability — Ampleon uses its best efforts to keep the
Customer is responsible for and shall do all necessary testing for the
information in this document accurate and reliable. However, Ampleon gives
customer’s applications and products using Ampleon products in order to
no representations or warranties, expressed or implied, as to the accuracy or
avoid a default of the applications and the products or of the application or
completeness of such information and assumes no liability for the
use by customer’s third party customer(s). Ampleon is not liable in this
consequences of the use of such information. Ampleon is not liable for
respect.
content provided by an external information source.
Limiting values — Stress above one or more limiting values (as defined in
In no event and irrespective of the legal basis (contract, tort (including
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
negligence) statutory liability, misrepresentation, indemnity or any other area
damage to the device. Limiting values are stress ratings only and (proper)
of law) shall Ampleon be liable for any indirect, incidental, punitive, special or
operation of the device at these or any other conditions above those given in
consequential damages (including but without limitation loss of profit or
the Recommended operating conditions section (if present) or the
revenue, loss of use or loss of production, loss of data, cost of capital, cost of
Characteristics sections of this document is not guaranteed. Constant or
substitute goods, property damage external to the Ampleon products and any
repeated exposure to limiting values will permanently and irreversibly affect
damage, expenditure or loss arising out of such damage, business
the quality and reliability of the device.
interruption, costs related to the removal or replacement of any products or
rework charges) or any of the foregoing suffered by any third party. Terms and conditions of commercial sale — Ampleon products are sold
Notwithstanding any damages that customer might incur for any reason subject to the general terms and conditions of commercial sale, as published
whatsoever, Ampleon’s aggregate and cumulative liability towards customer at http://www.ampleon.com/terms, unless otherwise agreed in a valid written
for the products described herein shall be limited in accordance with the individual agreement. In the event of signing an individual agreement the
Terms and conditions of commercial sale of Ampleon. terms and conditions of the respective agreement shall apply. Ampleon
hereby expressly objects to and rejects the validity of customer's terms and
conditions regarding the purchase of Ampleon products by customer.

BLP15H9S100 All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2023. All rights reserved.

Product data sheet Rev. 4 — 12 January 2023 12 of 14


BLP15H9S100
Power LDMOS transistor

No offer to sell or license — Nothing in this document may be interpreted or Translations — A non-English (translated) version of a document is for
construed as an offer to sell products that is open for acceptance or the grant, reference only. The English version shall prevail in case of any discrepancy
conveyance or implication of any license under any copyrights, patents or between the translated and English versions.
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
12.4 Licenses
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly ICs with DVB-T or DVB-T2 functionality
states that this specific Ampleon product is automotive qualified, the product Use of this product in any manner that complies with the DVB-T or the
is not suitable for automotive use. It is neither qualified nor tested in DVB-T2 standard may require licenses under applicable patents of the
accordance with automotive testing or application requirements. Ampleon is DVB-T respectively the DVB-T2 patent portfolio, which license is available
not liable for inclusion and/or use of non-automotive qualified products in from Sisvel S.p.A., Via Sestriere 100, 10060 None (TO), Italy, and under
automotive equipment or applications. applicable patents of other parties.
In the event that customer breaches this and uses the products for design
and use in automotive applications in accordance with automotive
specifications and standards, (a) Ampleon gives no warranty, representation 12.5 Trademarks
or other guarantees of any kind with respect to such automotive applications,
Notice: All referenced brands, product names, service names and trademarks
use and specifications, and (b) such use is solely and exclusively at
are the property of their respective owners.
customer's own risk, and (c) customer fully indemnifies Ampleon against any
and all liability, damages or failed product claims, including against third
parties, arising out of customer's design and use of the product for automotive
applications.

13. Contact information


For more information, please visit: http://www.ampleon.com
For sales office addresses, please visit: http://www.ampleon.com/sales

BLP15H9S100 All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2023. All rights reserved.

Product data sheet Rev. 4 — 12 January 2023 13 of 14


BLP15H9S100
Power LDMOS transistor

14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics . . . . . . . . . . . . . . . . . . 2
6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
7 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 4
7.1 Ruggedness in class-AB operation . . . . . . . . . 4
7.2 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
7.3 Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 6
7.3.1 Pulsed CW performance measured in production
RF test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . 6
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
9 Handling information. . . . . . . . . . . . . . . . . . . . 11
10 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11
11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
12.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
12.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
12.4 Licenses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
12.5 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
13 Contact information. . . . . . . . . . . . . . . . . . . . . 13
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© Ampleon Netherlands B.V. 2023. All rights reserved.


For more information, please visit: http://www.ampleon.com
For sales office addresses, please visit: http://www.ampleon.com/sales
Date of release: 12 January 2023
Document identifier: BLP15H9S100

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