Rasukkannu
Rasukkannu
Rasukkannu
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Article
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■ INTRODUCTION
Multi-band gap materials offer the possibility of increasing the
can represent a parallel cell. The cell will have a high tolerance
to changes in the solar spectrum.6
efficiency of solar cells beyond the limit of traditional single- In the mid-20th century, researchers7−10 suggested the
band gap solar-cell materials. Intermediate-band (IB) materials concept of creating intermediate levels in the middle of a
are characterized by the splitting of the main band gaps into forbidden band gap to increase the maximum photocurrent by
two or more sub-band gaps by narrow IBs and have been the doping the semiconductor with a large concentration of
focus of recent studies.1,2 In IB solar cells, an IB material is impurities. At an early stage, it was believed that these IBs
sandwiched between two ordinary p-type and n-type semi- would cause nonradiative recombination. It has been later
conductors and deed as discriminating contacts to the valence shown that the nonradiative recombination can be suppressed
band (VB) and the conduction band (CB), respectively. In IB by using a sufficiently high concentration of dopants.10−13
materials, an electron is promoted from the VB to the CB Two major approaches are considered in fabricating IB solar
through the IB. Upon absorption of sub-band gap-energy cells, namely, quantum-dot IBs (QDIBs) and bulk IB solar cells.
photons, the electrons transit from VB to CB and later from IB By using quantum dots with different shapes and sizes, the IB
to CB. It will add up to the transition of electrons from VB to levels can be tuned. The first QDIB was produced in 2004 on
CB through conventional VB-to-CB photon absorption.1,2 By the basis of the InAs/GaAs QD material with an efficiency of
adopting a hypothesis similar to that of Shockley and Queisser,3 15.3%. Energy levels of the confined states in a quantum dot
it was shown in 19974 that balance-limiting efficiencies of can be used as IB in QDIBs. However, there are many
63.2% for IB solar cells and 41% for single-band gap solar cells challenges with QDIBs as quantum dots are very small and do
can be achieved at a concentration of 46 050 suns at earth and not absorb a significant amount of light. With an increasing
sun temperatures of 300 and 6000 K, respectively. number of QDs, the cell structure can be damaged, and strain
The IB should be partially filled to permit the comparable will cause severe damages. At room temperature, the Shockley−
rates for the low sub-band gap-energy photon absorption Read−Hall recombination is a dominant mechanism that leads
processes and should not overlap with either the VB or the CB to low efficiency in QDIB solar cells due to deeper impurities.
to avoid fast transitions through thermalizations.5 We can
consider the IB solar cells as a combination of three cells. Cells Received: December 21, 2016
representing VB-to-IB and IB-to-CB transitions can be Accepted: March 31, 2017
regarded as two cells in series, and the VB-to-CB transition Published: April 13, 2017
Figure 1. Band diagram of bulk IB solar cell; Evienergy gap between the top of the VB and the bottom of an IB, Ecienergy gap between the top
of the IB and the bottom of the CB, ΔEiwidth of the IB, Egtotal band gap between the top of the VB and the bottom of the CB. The electronic
transitions (V, I), (I, I), (I, C), and (V, C) are also explained.
Table 1. Calculated Selected Narrow-Band Gap Semiconductors with IBs and Band Gap Type
serial no. chemical formula Pearson symbol space group number band gap (Evi) band gap (Eci) width of IB (ΔEi) total band gap (Eg) band gap type
1. K6C60 cI132 204 0.61 0.28 0.39 1.28 ID
2. Au2Cs2I6 tI20 139 0.64 1.01 0.7 2.35 ID
3. Ag2GeBaS4 tI16 121 0.90 0.35 1.16 2.41 ID
Several research groups have produced QDIB solar cells,14−22 the electronic transitions of (V, I), (I, I), (I, C), and (V, C) are
and efficiencies over 18% have been reported by Blokhin et al.20 schematically depicted in the figure.
The second type of IB solar cells is based on bulk materials. In the present work, we study 2100 structures with the aim of
The IB was detected through photoreflectance measurements identifying ideal candidates for solar-cell materials. We employ
in some bulk materials, and this formation was attributed to density functional theory (DFT) calculations to verify the
band anticrossing and heavily mismatched alloys.23 The first of presence of an IB, isolated in the band gap of the
these bulk materials, ZnMnTeO, was developed by Walukie- semiconductor compounds of bulk material compounds with
wicz and co-workers.23 Later, numerous quantum-accurate different substitutional impurities forming ternary alloys. The
calculations have been performed on VInS bulk material, calculated band gap values are used to identify the most suitable
characterized by an IB containing Fermi levels. Phillips and co- compounds for solar-cell applications. We also present density
workers developed bulk IB solar cells using ZnTe doped with of states (DOS) and effective mass calculations for the selected
an oxygen atom and obtained higher efficiencies and short- IB materials.
circuit current than QDIB solar cells.24,25 The band gap
properties of bulk materials are widely studied, and the
technologies are well verified by researchers.5,26−33 However,
■ RESULTS AND DISCUSSION
The main focus of the present work is to find the potential IB
the search for intermediate-band gap materials continues, to materials from the selected 2100 compounds. Because of the
model high-efficiency IB solar cells. Figure 1 shows the band very high computational cost, we mainly focused on the
diagram of an IB solar cell with Eg, the total band gap between electronic structure, the DOS and effective mass calculations.
the top of the VB and the bottom of the CB. In the figure, Evi is The hybrid electronic structure and optical properties of the
the energy gap between the top of the VB to the bottom of an selected IB compounds are under investigation, and the results
IB, Eci is the energy gap between the top of the IB to the will be published in a forthcoming work. We employ the DFT
bottom of the CB, and ΔEi is the width of the IB. Furthermore, method to elucidate the band structure arrangement of 2100
1455 DOI: 10.1021/acsomega.6b00534
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known that the band gap (Eg) values of solids obtained from
usual DFT calculations are systematically underestimated due
to discontinuity in the exchange-correlation potential. Thus, the
calculated Eg values are typically 30−50% smaller than those
measured experimentally.35 It is recognized that the theoret-
ically calculated Eg for semiconductors and insulators are
strongly dependent on the approximations used, particularly on
the exchange and correlation terms of the potential. In the
present work, because of the large number compounds involved
in the screening process, we have used only generalized-
gradient approximation. However, the overall structure is not
going to change except the band gap value irrespective of the
approximation.
We have chosen to divide the 17 compounds with IBs into
three groups depending on the magnitude of their band gap
values. The first group of three compounds is named as narrow-
band gap semiconductors, which is characterized by band gaps
varying from 1.2 to 2.5 eV. The second group of eight
compounds is named wide-band gap 1 semiconductors, which
includes materials with band gaps varying from 2.6 to 3.15 eV.
Finally, the third group is named as wide-band gap 2
semiconductors. In this case, the band gap values vary from
3.15 to 3.5 eV. The band structures of these compounds are
presented in Figures 2a−c, 3a−d, 4a−d, and 5a−f, and we
calculate the total band gaps, band gaps Evi, Eci, and the widths Figure 2. Calculated electronic band structures of (a) K6C60, (b)
of the IB (ΔEi) bands for all of the compounds. The electronic Au2Cs2I6, (c) and Ag2GeBaS4. The Fermi level is set to zero.
structure properties of these compounds are presented in
Tables 1, 2, and S1. known as a semiconductor and the nature of the band structure
As presented in Table 1, narrow-band gap semiconductors is not well explained about the IB. However, they explained that
K6C60 (alkali fullerides), Au2Cs2I6, and Ag2GeBaS4 had total the electronic structure of crystalline K6C60 is indirect band gap
indirect band gaps of 1.28, 2.35, and 2.41 eV, respectively. of 0.48 eV.36 The DOS around the VB maximum is very similar
From Figure 2a, the calculated values for K6C60 are: The total to that of the isolated C60 molecule, and the K atoms are almost
indirect band gap is 1.28 eV, band gaps Evi and Eci are 0.61 and completely ionized.36
0.28 eV, respectively, and the width of the IB is 0.39 eV. The Similarly, from Figure 2b, the calculated values for Au2Cs2I6
band gap of 1.28 eV makes an optimal compound for the PV are as follows: The total indirect band gap is 2.35 eV, band gaps
applications as their light responses are in the infrared region. Evi and Eci are 0.64 and 1.01 eV, respectively, and the width of
Also, the IB will help the material to absorb additional photons the IB, ΔEi is 0.70 eV. The band gap of 2.35 eV for Au2Cs2I6
with lower energy. It should be noted that K6C60 is already shows that the material has its response to light in the visible
1456 DOI: 10.1021/acsomega.6b00534
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Figure 3. Calculated electronic band structures of (a) CuAgPO4 (up and down spin bands; upblack, downred), (b) Ag2ZnSnS4, (c) Au2Cs2Br6,
and (d) Ag3AsS4. The Fermi level is set to zero.
region. For Au2Cs2I6, the IB region has the optimal thickness to As presented in Table 2, the wide-band gap semiconductors
balance the absorption rate and recombination rate.37 In Figure CuAgPO 4 , Ag 2 ZnSnS 4 , Au 2 Cs 2 Br 6 , Ag 3 AsS 4 , Ag 2 KSbS 4 ,
2b, Au2Cs2I6 has a broad band dispersion of IB, enough to Na3Se4Sb, AgK2SbS4, and AsRb3Se4 had the total band gaps
produce an optical depth for subgap light, ensuring the of 2.62, 2.70, 2.71, 2.77, 2.93, 2.97, 2.97, and 3.15 eV,
compound to absorb subgap light so that it can be considered respectively. Figures 3a−d and 4a−d show the calculated band
as a potential PV material.37 structures of CuAgPO4, Ag2ZnSnS4, Au2Cs2Br6, Ag3AsS4,
From Figure 2c, the calculated values for Ag2GeBaS4 are: Ag2KSbS4, Na3Se4Sb, AgK2SbS4, and AsRb3Se4 with IB,
The total indirect band gap is 2.41 eV, band gaps Evi and Eci are respectively. The calculated values of Evi, Eci, and ΔEi, and
0.90 and 0.35 eV, respectively, and the width of the IB is 1.16 the total band gaps are presented in Table 2. The band gap type
eV. The band gap of 2.35 eV for Ag2GeBaS4 shows that the of the above eight compounds is direct band gap except for
material has its response to light in the visible region. Here, we Ag2KSbS4 (indirect band gap). From Figure 2c, the calculated
values for Ag2ZnSnS4 are: The total direct band gap is 2.70 eV,
observe that the width of the IB, ΔEi, in Ag2GeBaS4 is much
band gaps Evi and Eci are 0.47 and 0.57 eV, respectively, and the
higher than Eci and Evi. Because of the broadness of the IB,
width of the IB is 1.66 eV. The band gap of 2.70 eV for
photons can also be absorbed by the electrons from lower-
Ag2ZnSnS4 shows that the material has its response to light in
energy states of the IB to excite to higher-energy states of IB. the visible region. Here, we observe that the width of the IB,
When the IB broadens, the absorption of photons for the ΔEi, in Ag2ZnSnS4 is much higher than Eci and Evi. The increase
transition of electrons from the VB to lower-energy states of IB in the IB width leads to a decrease in efficiency; however, it is
as well as from the higher-energy states of IB to CB will be still significantly higher than that of a single-band gap solar
reduced. These effects will lead to lower efficiencies of the solar cell.39 The band gaps associated with optimum efficiencies are
cell based on Ag2GeBaS4. It has been shown that the efficiency constant for all IB solar cells when the IB width exceeds 2 eV.39
limit for an IB solar cell is reduced from higher to lower Because of the display of the small amount of data, we added
efficiencies if the width is infinitesimally significant.38 It is the remaining six compounds in the Supporting Information.
important to note that all of these three materials, K6C60, In general, the electrochemical potentials of the electrons in
Au2Cs2I6, and Ag2GeBaS4, present indirect band gaps. the different bands are close to the edges of the bands. The
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Figure 4. Calculated electronic band structures of (a) Ag2KSbS4, (b) Na3Se4Sb, (c) AgK2SbS4, and (d) AsRb3Se4. The Fermi level is set to zero.
Figure 5. Total and site-projected DOS of Au2Cs2I6. The Fermi level is set to zero and marked by a vertical dotted line.
open-circuit voltage of any solar cell is the difference between and 3.51 eV, respectively. Ag2GeBaS4 is still capable of
the CB minimum at the electrode in contact with the n-type absorbing energy photons above 0.28 eV in Table 1 and
side and the VB maximum at the electrode in contact with the
p-type side. Thus, the maximum photovoltage of IB solar cells Ag6SiSO8 of 0.47 eV in Table 2. IB solar cells can deliver a
on the materials presented in Tables 1 and S1 is limited to 2.41 maximum photovoltage by absorbing two sub-band gap
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Figure 7. Total and site PDOS of Ag2ZnSnS4. The Fermi level is set to
zero and marked by a vertical dotted line.
■
composed of the S 2p band and the Ge 4s band as well as the
smaller mixing of the Ba 4d band. For Ag2ZnSnS4, the IB is EFFECTIVE MASS CALCULATION
formed in the energy region between 0.47 and 2.13 eV, and the
The calculation of the effective mass is important for a detailed
electron density, as shown in Figure 7 better describes the
study of energy levels in solar devices. The conductivity
states. The PDOS of Ag2ZnSnS4 at the IB mainly composed of
effective masses of electrons and holes affect the mobility,
the Sn 5s band and the S 2p band is shown in Figure 7. The
electrical resistivity, and free-carrier optical response of
Ag2ZnSnS4 has an energy gap of 2.62 eV. We found the
photovoltaic applications.42 To investigate the electron/hole
excellent IB peaks between CB and VB in the three materials,
conduction properties of the identified IB materials, we have
namely, Au2Cs2I6, Ag2GeBaS4, and Ag2ZnSnS4. We observed
computed the electron/hole effective mass at the VB/CB. For
that the p and s states play a vital role in the band structure for
an excellent IB, a low effective mass corresponds to a high
the applicability of semiconductor for PV applications.
mobility of the electrons/holes at the VB/CB and consequently
In Figures 5−7, broadening of IB indicates a highly parabolic
high conductivity. For the EM calculation, we have employed
dispersion relationship that induces lower values for the DOS.41
the effective mass calculator (EMC).43 EMC implements the
From Tables 3 and 4, the electron effective masses of Au2Cs2I6,
calculation of the effective masses at the bands extreme using
Ag2GeBaS4, and Ag2ZnSnS4 are 0.095me, 0.021me, and 0.025me,
the finite difference method (FDM) (not the band-fitting
respectively. Lower values for the electron effective mass are as
method). The effective mass (m*) of charge carriers is defined
expected because the effective mass is directly related to the
as43
values of DOS. In addition, the IB region has the optimal
thickness to balance the absorption rate and the recombination ⎛ 1 ⎞ 2
1 ∂ En(k ⃗)
rate.37 We may expect the effective IBSC to have IB thickness ⎜ ⎟ =
⎝ m* ⎠ij 2
, i, j = x, y, z
ℏ ∂kikj (1)
enough to ensure these materials to absorb sufficient subgap
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where x, y, and z are the directions in the reciprocal Cartesian direction. We observed from Jing et al. that the effective mass of
space (2π/A), En(k) is the dispersion relation for the nth an electron is 0.16me for Ag2ZnSnS4 in [100] plane direction.42
electronic band, and indices i and j denote reciprocal Hence, we found a lower effective mass in [110] direction than
components. The explicit form of the symmetric tensor in in [100] direction. These effective masses are better described
the right-hand side of eq 1 is43 by the band structures of the most curved parabolic band, as
shown in Figures 3−5. Because of the effective masses for the
⎛ d2E d2E d2E ⎞ presented materials, in this article, the electron mobility from
⎜ 2 ⎟
⎜ dk x dk x dk y dk x dk z ⎟ VB to CB will be higher and the recombination effect will be
⎜ ⎟ lower.
■
d2E ⎜ d2E d2E d2E ⎟
= ⎜ dk dk dk y dkz ⎟⎟
dk 2 ⎜ x y dk y2 CONCLUSIONS
⎜ 2 ⎟ We have carried out a comprehensive study of the electronic
⎜ dE d2E d2E ⎟ band structures of 2100 new bulk compounds using first-
⎜ dk dk dk y dkz dkz2 ⎟
⎝ x z ⎠ (2) principle calculations with the DFT. Among these compounds,
we have found that only 17 compounds have IBs. These
The effective mass components are the inverse of the compounds could be potentially used as photovoltaic materials
eigenvalues of eq 2, and the principal directions correspond based on the detailed studies of band structure, the DOS and
to the eigenvectors.43 effective mass calculations. Our effective mass calculations show
To better understand the effective mass of semiconductors, it that these compounds have high electron/hole conduction
is not possible to fit the band to the quadratic polynomial. In properties, which make them suitable for PV applications.
this case, the results from the parabolic fitting can be Although we have studied 2100 new compounds from the
reproduced with the FDM.43 The FDM employed to solve ICSD database, our study clearly demonstrates the possibility of
the effective mass approximation equations because the having more IB materials from the list of currently known
spurious solutions can be included in the formalism, and the compounds from the database. Thus, we are in the process of
FDM can be solved by the hard equation having a high degree investigating more IB-compounds and results of the detailed
of polynomial.44 This approach is quite reliable, and it was analysis will be published in a forthcoming article.
■
successfully applied for several classes of materials in the
literature.43 We present the effective masses of 14 compounds
in Tables 3 and 4. The effective mass of an electron was COMPUTATIONAL DETAILS
computed from the minimum of the CB; the effective mass of Total energies have been calculated by the projected
the heavy hole was computed from the maximum of the first augmented plane-wave (PAW) implementation of the Vienna
VB curvature, whereas the second VB curvature was used for ab initio simulation package.47 Ground-state geometries were
the light hole. In the case of materials presented in Tables 3 and determined by minimizing stresses and the Hellman−Feynman
4, the PBE functional predicts the effective masses of the light forces using the conjugate-gradient algorithm with a force
hole, heavy hole, and electron, which are parabolic-fitted values convergence threshold if 10−3 eV Å −1 . Brillouin-zone
with a step size of 0.05 (1/bohr). The three narrow-band gap integration was performed using the Monkhorst−Pack k-
compounds, K6C60, Au2Cs2I6, and Ag2GeBaS4, have low meshes with a Gaussian broadening of 0.1 eV. A 600 eV kinetic
effective masses, as presented in Table 3. energy cutoff was used for the plane-wave expansion. All of
The thirteen wide-band gap compounds in Table 4 have these calculations usually set to use approximately the same
effective masses of electron lower than those of light holes and density of k-points in the reciprocal space for all structures.
heavy holes except for CuAgPO4. The effective masses of Because a large variety of structures was considered in this
electron of photovoltaic materials silicon (Si), germanium study, both metallic and insulating, we ensured that the k-points
(Ge), and gallium arsenide (GaAs) are 0.26me, 0.067me, and mesh was dense enough to determine the total energy with
0.12me, respectively.45,46 The above three photovoltaic meV/atom accuracy. All structures containing transition
materials are single-band gap materials. It is well known that
elements are treated using the spin-polarized approach. In
the band gaps of Si, Ge, and GaAs are 1.12, 0.66, and 1.424 eV,
some cases, the starting magnetization vanished as self-
respectively. The maximum energy conversion of silicon and
consistency was reached. For all of these computations, the
GaAs solar cells can reach 30% efficiency.48 We can use
germanium as the doping material in silicon solar cells because starting structures were directly taken from the ICSD database
of its low band gap. We noticed that the effective masses of the and input parameters, and file generation was done automati-
electron for the silicon and GaAs are low.45 From our results, cally by locally developed code “Tool”. For the calculation of
we observed that the effective masses of electron for K6C60, band structure, the k-point files were generated again with the
Au2Cs2I6, and Ag2GeBaS4 are 0.216me, 0.095me, and 0.021me, help of locally developed code “KPATH”. The information
respectively. about the high symmetric points of the k-vector in the Brillouin
From Table 4, we noted that the effective masses of electron zone was taken from the Bilbao Crystallographic Server.48−50
for Ag2ZnSnS4, Au2Cs2Br6, Ag3AsS4, Ag2KSbS4, Na3Se4Sb, All of the calculated electronic structures of the studied systems
Al2HgSe4, PdPbF4, Ag6SiSO8 are 0.025me, 0.806me, 0.012me, are documented in the DFTBD database. For the transition
0.034me, 0.085me, 0.021me, 0.094me, and 0.053me, respectively. metals, we have used exchange-correlation functional with the
Hence, the effective masses of electron of our narrow-band gap Hubbard parameter correction (GGA+U), following the
and wide-band gap materials are approximately equal to those rotationally invariant form. The full details about the computed
of the photovoltaic materials. From Table 4, the effective mass U and J values are presented in the DFTBD database
of an electron is 0.025me for Ag2ZnSnS4 in [110] plane website.51−54
1460 DOI: 10.1021/acsomega.6b00534
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■
Article
ASSOCIATED CONTENT (16) Kechiantz, A.; Sun, K.; Kechiyants, H.; Kocharyan, L. Self-
ordered Ge/Si quantum dot intermediate band photovoltaic solar cells.
*
S Supporting Information
ISJAEE 2005, 12, 85−87.
The Supporting Information is available free of charge on the (17) Laghumavarapu, R.; El-Emawy, M.; Nuntawong, N.; Moscho,
ACS Publications website at DOI: 10.1021/acsomega.6b00534. A.; Lester, L.; Huffaker, D. Improved device performance of InAs/
GaAs quantum dot solar cells with GaP strain compensation layers.
Tables, list of computed compounds and figures (PDF)
Appl. Phys. Lett. 2007, 91, 243115.
■
(18) Popescu, V.; Bester, G.; Hanna, M. C.; Norman, A. G.; Zunger,
AUTHOR INFORMATION A. Theoretical and experimental examination of the intermediate-band
concept for strain-balanced (In, Ga) As/Ga (As, P) quantum dot solar
Corresponding Author cells. Phys. Rev. B 2008, 78, No. 205321.
*E-mail: [email protected]. (19) Bailey, C. G.; Forbes, D. V.; Raffaelle, R. P.; Hubbard, S. M.
ORCID Near 1 V open circuit voltage InAs/GaAs quantum dot solar cells.
Appl. Phys. Lett. 2011, 98, No. 163105.
Murugesan Rasukkannu: 0000-0002-2167-3242 (20) Blokhin, S.; Sakharov, A.; Nadtochy, A.; Pauysov, A.; Maximov,
Notes M.; Ledentsov, N.; Kovsh, A.; Mikhrin, S.; Lantratov, V.; Mintairov, S.;
The authors declare no competing financial interest. et al. AlGaAs/GaAs photovoltaic cells with an array of InGaAs QDs.
■
Semiconductors 2009, 43, 514−518.
(21) Guimard, D.; Morihara, R.; Bordel, D.; Tanabe, K.; Wakayama,
ACKNOWLEDGMENTS Y.; Nishioka, M.; Arakawa, Y. Fabrication of InAs/GaAs quantum dot
The authors gratefully acknowledge the Bergen University solar cells with enhanced photocurrent and without degradation of
College for financially supporting M.R. P.V. and D.V. open circuit voltage. Appl. Phys. Lett. 2010, 96, No. 203507.
acknowledge the NOTUR computing facilities of project. (22) Zhou, D.; Sharma, G.; Thomassen, S.; Reenaas, T.; Fimland, B.
numbers NN2867K and NN2875K, which have been used to Optimization towards high density quantum dots for intermediate
band solar cells grown by molecular beam epitaxy. Appl. Phys. Lett.
conduct the calculations presented in this article, and further
2010, 96, No. 061913.
acknowledge Dr.Vishnu for fruitful discussions.
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(23) Walukiewicz, W.; Shan, W.; Yu, K.; Ager, J., III; Haller, E.;
Miotkowski, I.; Seong, M.; Alawadhi, H.; Ramdas, A. Interaction of
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(12) Strandberg, R.; Reenaas, T. W. Photofilling of intermediate of formation of TiGa3As4 and TiGa3P4 intermediate band materials. J.
bands. J. Appl. Phys. 2009, 105, No. 124512. Chem. Phys. 2006, 124, No. 014711.
(13) Levy, M. Y.; Honsberg, C. Solar cell with an intermediate band (33) Sánchez, K.; Aguilera, I.; Palacios, P.; Wahnón, P. Assessment
of finite width. Phys. Rev. B 2008, 78, No. 165122. through first-principles calculations of an intermediate-band photo-
(14) Hubbard, S.; Cress, C.; Bailey, C.; Raffaelle, R.; Bailey, S.; Wilt, voltaic material based on Ti-implanted silicon: Interstitial versus
D. Effect of strain compensation on quantum dot enhanced GaAs solar substitutional origin. Phys. Rev. B 2009, 79, No. 165203.
cells. Appl. Phys. Lett. 2008, 92, No. 123512. (34) Huang, F.-W.; Sheu, J.-K.; Lee, M.-L.; Tu, S.-J.; Lai, W.-C.; Tsai,
(15) Oshima, R.; Takata, A.; Okada, Y. Strain-compensated InAs/ W.-C.; Chang, W.-H. Linear photon up-conversion of 450 meV in
GaNAs quantum dots for use in high-efficiency solar cells. Appl. Phys. InGaN/GaN multiple quantum wells via Mn-doped GaN intermediate
Lett. 2008, 93, No. 083111. band photodetection. Opt. Express 2011, 19, A1211−A1218.
Calculated electronic band structure of (a) AsCs3Se4, (b) Al2HgSe4, (c) C2Te2F4 and
Figure S 1
(d) PdPbF4. (e) AlMoVO7 and (f) Ag6SiSO8. The fermi level is set to zero.
S1
Table S1. Wide-band 2 semiconductors with intermediate band ranging from 3.15 eV to 3.51
eV
In literature two types of tetragonal structures I-4 (kesterite-type; space group 82) and I-42m
(stannite-type; space group 121) are described for Ag2ZnSnS4. Both of these two
modifications are having similar atomic arrangement (see Figure S 2 ) and are highlighted by
square box in Figure S 2. Our total energy calculation predicted that kesterite-type structure is
energetically favourable for Ag2ZnSnS4 compound (see Figure S 3). This finding is
consistence with the recent experimental findings by Gong et al. [1] The calculated structural
parameters and atomic positions are well fitted with the experimental findings. The involved
energy difference between the two structures is 0.14 eV/f.u.
S2
Figure S 2 Crystal structures of tetragonal Ag2ZnSnS4 in I-4and I-42m structure viewed along
[001]. Both of these two modifications are having similar atomic arrangement and are
highlighted by square box. The atomic label for the different kinds of atoms is given in the
illustration.
Figure S 3 Calculated unit cell volume vs. total energy (per formula unit; f.u.) curves for
Ag2ZnSnS4 in I-4and I-42m structure arrangements; structure types are labelled on the
illustration.
S3
Figure S 4 Band structure of tetragonal Ag2ZnSnS4 in I-4 space group. The Fermi level is set
to zero.
Figure S 5 Band structure of tetragonal Ag2ZnSnS4 in I-42m space group. The Fermi level is
set to zero.
S4
Table S2 List of Compounds with Intermediate band considered in this study are listed
bellow. The chemical formula, pearson symbol, space group number, Evi- Energy gap
between top of the valence band to bottom of an intermediate band, Eci- Energy gap between
top of the intermediate band to bottom of the conduction band, Ei1-Ei2- gap between two IBs,
∆Ei1 and ∆Ei2- bandwidth of the intermediate bands , Eg-total bandgap between top of the
valence band and bottom of the conduction band, ID-indirect bandgap type, DB-direct
bandgap type are listed
Serial Chemical Pearson Space Bandgap Bandgap Multibands Width of Total Band
no. Formula symbol group (Evi) gap IBss Bandgap gap type
number (Eci)
(Ei1-Ei2) ∆Ei1, ∆Ei2 (Eg)
S5
18. Al2HgS4 tI14 121 2.0 0.03 - 1.64 3.64 ID
Serial Chemical Pearson Space Bandgap Bandgap Multibands Width of IBs Total Band
no. Formula symbol group (Evi) gap Bandgap gap type
(Eci) ∆Ei1, ∆Ei2
number
(Ei1-Ei2) (Eg)
29. AsInF6 hR8 148 3.33 2.25 1.53 0.65, 1.26 9.02 ID
S6
Serial Chemical Pearson Space Bandgap Bandgap Multibands Width of IBs Total Band
no. Formula symbol group (Evi) gap Bandgap gap type
(Eci) ∆Ei1, ∆Ei2
number
(Ei1-Ei2) (Eg)
56. Au2HgF8 tP22 127 2.1 0.21 1.21 2.88, 2.25 8.65 DB
60. Au3LaF12 hR32 167 2.55 0.39 2.59 0.22, 1.95 7.70 ID
S7
Serial Chemical Pearson Space Bandgap Bandgap Multibands Width of IBs Total Band
no. Formula symbol group (Evi) gap Bandgap gap type
(Eci) ∆Ei1, ∆Ei2
number
(Ei1-Ei2) (Eg)
72. CdPdF6 aP8 148 2.27 1.72 2.26 0.52, 1.91 8.69 ID
73. CdPtF6 hR8 148 2.74 0.95 0.68 0.66, 2.33 7.36 DB
74. CdSnF6 hR8 148 3.59 0.76 0.95 2.01, 1.93 9.24 ID
75. CdTiF6 hR8 148 4.92 0.98 0.79 0.24, 2.55 9.48 ID
S8
Serial Chemical Pearson Space Bandgap Bandgap Multibands Width of IBs Total Band
no. Formula symbol group (Evi) gap Bandgap gap type
(Eci) ∆Ei1, ∆Ei2
number
(Ei1-Ei2) (Eg)
Serial Chemical Pearson Space Bandgap Bandgap Multibands Width of IBs Total Band
no. Formula symbol group (Evi) gap Bandgap gap type
S9
number (Eci) (Ei1-Ei2) ∆Ei1, ∆Ei2 (Eg)
110. NiF3 hR8 167 1.24 2.54 2.84 0.62, 0.17 7.41 ID
111. RhF3 hP12 150 1.30 1.61 0.16 1.00, 1.56 5.63 ID
117. TcOF4 hP36 176 1.97 1.49 1.35 0.59, 1.44 6.84 DB
Serial Chemical Pearson Space Bandgap Bandgap Multibands Width of IBs Total Band
no. Formula symbol group (Evi) gap Bandgap gap type
S10
number (Eci) (Ei1-Ei2) ∆Ei1, ∆Ei2 (Eg)
131. Li2TiF6 tP18 136 4.88 1.58 1.54 0.16, 0.31 8.47 DB
136. Sn2F6 cF32 221 2.26 0.54 1.01 2.06, 1.20 7.07 ID
Serial Chemical Pearson Space Bandgap Bandgap Multibands Width of IBs Total Band
no. Formula symbol group (Evi) gap Bandgap gap type
S11
number (Eci) (Ei1-Ei2) ∆Ei1, ∆Ei2 (Eg)
150. K3TaF8 hP24 186 3.98 0.09 1.48 0.06, 0.30 5.91 DB
152. NbSeF9 hR44 146 5.53 1.99 0.68 0.62, 0.09 8.91 DB
Serial Chemical Pearson Space Bandgap Bandgap Multibands Width of IBs Total Band
no. Formula symbol group (Evi) gap Bandgap gap type
S12
number (Eci) (Ei1-Ei2) ∆Ei1, ∆Ei2 (Eg)
Serial Chemical Pearson Space Bandgap Bandgap Multibands Width of IBs Total Band
no. Formula symbol group (Evi) gap Bandgap gap type
S13
number (Eci) (Ei1-Ei2) ∆Ei1, ∆Ei2 (Eg)
198. Au K1C4 N4H2O oP52 19 4.29 1.17 0.3 0.05, 0.36 5.87 DB
208. BaTiF6 hR8 166 4.80 0.94 1.6 0.14, 0.33 7.81 ID
Serial Chemical Pearson Space Bandgap Bandgap Multibands Width of IBs Total Band
no. Formula symbol group (Evi) gap Bandgap gap type
S14
number (Eci) (Ei1-Ei2) ∆Ei1, ∆Ei2 (Eg)
215. Ba3In2F12 tP34 127 4.70 0.9 0.52 1.1, 0.28 7.50 DB
223. BiNa3O3 cI56 217 2.89 0.37 0.65 1.3, 1.58 6.79 DB
234. C12Ru4Se4 O12 cI64 217 2.19 1.32 0.93 0, 1.33 5.77 ID
Serial Chemical Pearson Space Bandgap Bandgap Multibands Width of IBs Total Band
no. Formula symbol group (Evi) gap Bandgap gap type
S15
number (Eci) (Ei1-Ei2) ∆Ei1, ∆Ei2 (Eg)
248. AgSbF6 cI64 206 3.37 1.29 0.94 1.92, 1.45 8.97 DB
257. Au2BaF12 cP60 224 1.79 1.03 3.12 0.7, 0.5 7.14 DB
Serial Chemical Pearson Space Bandgap Bandgap Multibands Width of IBs Total Band
no. Formula symbol group (Evi) gap Bandgap gap type
(Eci) ∆Ei1, ∆Ei2
number
(Ei1-Ei2) (Eg)
S16
258. Au2BaF8 tI44 82 2.96 0.41 2.29 0.25, 2.38 8.29 ID
271. KYb3F10 cF112 225 0.96 0.39 6.27 0.07, 0.81 8.5 DB
Serial Chemical Pearson Space Bandgap Bandgap Multibands Width of IBs Total Band
no. Formula symbol group (Evi) gap Bandgap gap type
(Eci) ∆Ei1, ∆Ei2
number
(Ei1-Ei2) (Eg)
S17
280. PdRb2F6 cF36 225 2.84 3.69 - 0.29 6.82 DB
282. Pb2F6 tP16 116 1.96 1.10 2.40 1.23, 1.89 8.58 DB
List S1. List of computed compounds (in total 2100) considered in this study with their ICSD
number:
S18
94859; AgSeTl-100710; AgSe2Tb-605827; AgSr-58358; AgTeTl-23367; AgTe2Y6-160181;
AgTe3-37186; AgTh2-58367; AgYb-58377; AgZr2-58391; Ag2Al7Ca3-104173; Ag2AsKO4-
409793; Ag2BaGeS4-10040; Ag2BaGe2-25318; Ag2BaSn2-25332; Ag2BaTe2-246048;
Ag2Ba3-108847; Ag2BiO3-410665; Ag2BrNO3-1311; Ag2CaGe2-25316; Ag2CdGeS4-152753;
Ag2CeSi2-106693; Ag2CeSi2-52551; Ag2ClNO3-8013; Ag2Cl6Cs2-66067; Ag2Cl6Re-156662;
Ag2Cl6Re-249357; Ag2CrO4-16298; Ag2Cu2O3-51502; Ag2Dy-57380; Ag2Er-58252;
Ag2EuSi2-106697; Ag2FeS4Sn-42534; Ag2Gd-104473; Ag2GdSi2-52574; Ag2GeO3-167332;
Ag2Ge2Nd-154451; Ag2Ge2Pr-154449; Ag2Ge2Sr-25317; Ag2H3IO6-155415; Ag2H4O2S3-
408949; Ag2HgI4-6069; Ag2HgSe4Sn-95094; Ag2Ho-58278; Ag2INO3-8075; Ag2I6O8Ti-
420852; Ag2KPS4-420033; Ag2KS4Sb-82143; Ag2LaSi2-52587; Ag2La2O0Ti3-74194; Ag2Lu-
605531; Ag2MnO4-35762; Ag2Nb4O-180731; Ag2NdSi2-106695; Ag2NiO2-160574;
Ag2O0UW2-98550; Ag2OTa4-180734; Ag2O3Si-36589; Ag2P2STi2-84606; Ag2PrSi2-106694;
Ag2S4SnZn-605734; Ag2Sc-605791; Ag2Se-15213; Ag2Si2Sm-106696; Ag2Si2Sr-25330;
Ag2Si2Tb-98339; Ag2Si2Yb-52607; Ag2Sn2Sr-414; Ag2Sr3-58360; Ag2Tb-58365; Ag2Tm-
58373; Ag2Y-605957; Ag2Yb-605966; Ag2Zr-605995; Ag3AsS3-27841; Ag3AsS3-38388;
Ag3AsS4-86227; Ag3AsSe3-2426; Ag3AsSe3-82636; Ag3As2K3-32016; Ag3AuSe2-15734;
Ag3AuTe2-15733; Ag3BO3-26521; Ag3Ca5-57355; Ag3CeK2Te4-86678; Ag3CuS2-163982;
Ag3Ge3P6Sn2-52575; Ag3NO3Se-33581; Ag3O4V-417470; Ag3PS4-416585; Ag3PSe4-97760;
Ag3P6Si3Sn2-52595; Ag3S2Tl-75976; Ag3S3Sb-64986; Ag3Sb-52600; Ag3Sn-2721; Ag3Yb5-
58382; Ag4EuSb2-424312; Ag4I2O4Se-418902; Ag4Lu-58321; Ag4Mn3O8-414178;
Ag4N2O2S-23111; Ag4O4STe-421880; Ag4P2Se6-1727; Ag4Sb2Sr-424311; Ag4Sc-58349;
Ag5Cd8-604897; Ag5IO6-415893; Ag5O4Si-165377; Ag5S4Sb-36347; Ag5Zn8-58389;
Ag6BaO4-9288; Ag6CeN9O27-59256; Ag6CrO8Si-420804; Ag6Ge0P2-70055; Ag6O4Sr-10359;
Ag6O8SSi-6225; Ag8Ca3-107145; Ag8GeS6-100079; Ag8O4S2Si-2330; Ag8S6Si-1054;
Ag8S6Ti-95648; Ag8Se6Sn-95093; Al0Ba7-420092; Al2Ca8O24S2-67589; Al2Ca8O24Te2-86156;
Al2Cd8O24S2-78368; Al2Cd8O24Te2-86155; Al2Mg7-163478; Al2Mn-608472; Al2Mo-608577;
Al2O24S2Sr8-67590; Al2O24Sr8Te2-82609; Al2Re-109107; Al2Tc-58178; Al2W-58207;
Al4Ca2O32-164634; Al4Mg3-150647; Al4O25Sr4-88527; Al7Pd8Si4-52650; AlAsH4O6-170740;
AlAsO4-24512; AlAs3Ca3-32727; AlAuCa-370015; AlAuYb-370027; AlAu2-57496; AlAu2-
606020; AlBMgO4-34349; AlBO3-30538; AlBO4Pb-98572; AlB4Cr3-20082; AlB4Lu-41405;
AlB4Yb-181368; AlB6Yb2-41404; AlBaF5-37033; AlBaLaO4-62490; AlBa3F9-72718;
AlBa3HO4-280520; AlBeNa3O8Si2-4334; AlBr4Cs-83435; AlCOSc-419683; AlCaF4Mg3Na3-
168054; AlCaHO5Si-12127; AlCaH5-156314; AlCaPd-370036; AlCa2ClF2H8O2S2-80437;
AlCa2F7-100308; AlCa3Sb3-36363; AlCdF6Na-80559; AlCeH6-247039; AlCeO3-150277;
AlCeO3-245264; AlCeO3-245267; AlCePd2-604242; AlCePt-104635; AlCeRh-160052;
AlCeRu-160051; AlCl3H2O6-22071; AlCl4Cs-8118; AlCl4Cu-165607; AlCl4In-170790;
AlCl4NS2-27210; AlCl4Na-2307; AlCl4Tl-419828; AlCr2-57651; AlCsCuF6-240292;
AlCsO4Si-160822; AlCs2F6Na-41801; AlCuF6K-59003; AlCuO2-25593; AlCuS2-28733;
AlCuSe2-28734; AlCuTe2-28735; AlCu3-151216; AlDy-57734; AlEu-107525; AlFO4Sr3-
50736; AlF3-130021; AlF3-202681; AlF3-29131; AlF3-30274; AlF3-38305; AlF3-68826; AlF3-
72174; AlF3-79816; AlF3K2O4S-161272; AlF4K-166825; AlF4K-77913; AlF4Rb-54122;
AlF4Tl-202455; AlF5H0N2O-201652; AlF6H2N3-96591; AlF6K3-262078; AlF6Li3-34672;
AlF6Na3-74211; AlF6PdRb-78749; AlFeO3-203203; AlGdO3-59848; AlGeLa-105149;
AlGeLi3O5-72098; AlGeO5Y-32744; AlGePr-90160; AlGe3Tb2-152747; AlGe3Y2-78969;
S19
AlH2N3O5-96765; AlHO2-16768; AlH2LiO5Si-161494; AlH4K-99082; AlH4K-99083;
AlH4Na-8022; AlH4Th2-43313; AlH5Mg-165987; AlH5Sr-156315; AlH6K2Li-245317;
AlH6K3-153683; AlH6K3-153684; AlH6La-247037; AlH6Li3-99217; AlH6Nd-247043;
AlH6Pr-247041; AlHf2-150773; AlI2Pd5-14164; AlI4Na-400521; AlI8P-35403; AlKO2-88774;
AlKSb4-300157; AlKTe2-44703; AlLaO3-28629; AlLi-240114; AlLiO2P4-74860; AlLiO2-
23815; AlLiO2-28288; AlLiO4Si-97909; AlLiS2-608360; AlLiSe2-280225; AlLiTe2-162672;
AlLiTe2-280226; AlLi3N2-25565; AlLi5O4-1037; AlLi5O4-16229; AlLuO3-0000; AlMgSi-
153548; AlMoO7V-280775; AlMo4S8-36564; AlNNd2O3-201358; AlNaO2-22216; AlNaO2-
79404; AlNaSe2-44704; AlNaTe2-44701; AlNdO3-10333; AlNdPd2-604244; AlNdPt-150174;
AlO3Pr-35549; AlO3Y-167509; AlO4P-24511; AlO4P-72374; AlO4RbSi-160823; AlO4V2-
151457; AlPS4-15910; AlPd-58112; AlPdTb-54938; AlPdYb-370028; AlPd2-58115; AlPd2Pr-
604243; AlPd5-245328; AlPrPt-150173; AlPtY-609165; AlPt2-459; AlRe2-58147; AlSe2Tl-
100130; AlSiSm-151717; AlSm-609374; AlTb-58172; AlTc2-609480; AlY2-58211; AlZr2-
150774; Al2Pd8-58119; Al2Pt8-58136; Al2B2BaO7-409171; Al2B2CaO7-86785; Al2B2O7Sr-
89423; Al2BaGe2-98514; Al2BaGe2-98515; Al2BaO7Sb2-154362; Al2BaSi2-249559;
Al2Ba3F2-413546; Al2Ba3N4-410578; Al2Ba3O2Si3-27386; Al2BeO4-34806;
Al2Be2Cl2Na8O24Si8-55253; Al2Bi6Ca5-36364; Al2Br8Ti-39243; Al2C3Th2-81572; Al2CaCl8-
56730; Al2CaGa2-300209; Al2CaH4O8Si-100320; Al2CaH8-246482; Al2CaZn2-57550;
Al2Ca2O9Sn2-260890; Al2Ca3F4Na2-202657; Al2Ca3Ge3-31982; Al2Ca3H2O2-15379;
Al2Ca3N4-280348; Al2Ca3O2Si3-16750; Al2Ca5Sb6-60146; Al2CdS4-25634; Al2CdSe4-25637;
Al2CdTe4-25640; Al2CeGa2-55789; Al2CeZn2-57594; Al2CeZn2-606526; Al2Cl8Te4-10322;
Al2Cl8Yb-56729; Al2Cu-42517; Al2CuU-23257; Al2CuYb-604213; Al2Dy3Ni6-105027;
Al2Er3Ni6-107804; Al2F2Li3Na3-9923; Al2FK4NbO20-65738; Al2F2GeO4-409714; Al2FeS4-
607619; Al2Fe3O2Si3-28030; Al2Ga2La-607781; Al2Ga2Pr-607795; Al2Ga2Yb-607817;
Al2Gd2O7Sr-33580; Al2Ge8Sc-76361; Al2HgS4-25635; Al2HgSe4-25638; Al2HgTe4-25641;
Al2Ho3Ni6-105154; Al2LaZn2-105503; Al2La5Ru3-167948; Al2MgS4-107308; Al2MgS4-
38344; Al2MgS4-608441; Al2MgSe4-41926; Al2Mg3O2Si3-15438; Al2MnS4-608507;
Al2MnTe4-608538; Al2N2O3SiSr-408170; Al2N4Sr3-74824; Al2Ni6Y3-105538; Al2O2P3Tl3-
280212; Al2O2S3-32589; Al2O2Si3Sr3-27385; Al2O2W3-73878; Al2O3-84375; Al2O3-9770;
Al2O5Si-24275; Al2O9Pb2Si2-159977; Al2Os-58108; Al2Pb2Sr-25336; Al2Pd5Pu-166270;
Al2Pd5U-161313; Al2Pd5U-168816; Al2Pd5Y-182835; Al2PrZn2-106244; Al2Ru-609234;
Al2S4Zn-609280; Al2Sb6Sr5-62304; Al2Sb6Yb5-409996; Al2Se4Zn-25636; Al2SmZn2-609398;
Al2Te4Zn-25639; Al2Ti-107009; Al30Mg23-57965; Al3AuCe-658144; Al3Au8-57502;
Al3B4GdO2-100831; Al3B4NdO2-6175; Al3B4O2Y-20223; Al3Bi5Cl2-201993; Al3Ca2HO3Si3-
9245; Al3Ca4Mg-152756; Al3Cs2F2Na-646; Al3CuGd-658383; Al3Er5Ge4Ni3-172068;
Al3F9Pb5-203224; Al3FeSi2-79710; Al3Gd-607838; Al3H6KO4S2-12106; Al3Hf-109214;
Al3Ho-150555; Al3ITe3-66030; Al3Li2Si4-39597; Al3Nb-58015; Al3NiY-160931;
Al3O2Sc2Y3-67055; Al3Os2-58109; Al3Pd5-58118; Al3Ru2-609226; Al3Sc-247449; Al3Ta-
58169; Al3Tb-150557; Al3Ti-58189; Al3V-58201; Al3Y-58217; Al3Zr-106259; Al3Zr5-
603491; Al4AuErGe2-415290; Al4Ba-606140; Al4BaS7-33237; Al4Ba6F24-37034; Al4Bi2O9-
20069; Al4Bi4Cl6Se4-414155; Al4Bi4Cl6Te4-411714; Al4Br4La5-413559; Al4C3-14397;
Al4C4Th-81573; Al4C5Hf2-161586; Al4C5Zr2-173676; Al4C6Hf3-161585; Al4C6Zr3-173677;
Al4Ca-151189; Al4Ce-57556; Al4CeCo-55598; Al4CoLa-9986; Al4CoNd-154678; Al4CoPr-
600912; Al4ErMo2-607414; Al4Eu-55427; Al4Fe8U-607702; Al4Ge2NiTb2-95799; Al4La-
S20
57935; Al4Mo2Yb-456; Al4Nd-150508; Al4Ni3-58042; Al4Pr-150507; Al4Sm-609379; Al4Sr-
107887; Al5Br4La0-409704; Al5CePt3-171199; Al5Er3O2-62615; Al5Gd3O2-23849; Al5Ho3O2-
33603; Al5Lu3O2-23846; Al5NaO2Ti2-15346; Al5Ni2Zr-58084; Al5O2Tb3-33602; Al5O2Y3-
16825; Al6AuDy2Si4-281661; Al6AuSi4Tb2-281659; Al6C3N2-14399; Al6Ca0Ge9-417966;
Al6Ca4O3-16177; Al6Ca4O6W-28481; Al6Dy2PtSi4-281660; Al6OSr2-97713; Al6O6SSr4-
28482; Al6O6Sr4W-28483; Al6PtSi4Tb2-281658; Al7Au3Ce-391101; Al7Au3Dy-391108;
Al7Au3Er-391109; Al7Au3Gd-391102; Al7Au3Ho-391106; Al7Au3Lu-391105; Al7Au3Nd-
391107; Al7Au3Pr-391104; Al7Au3Tb-391103; Al7Ca3Cu2-57538; Al7Te0-62659; Al7Th2-
58186; Al8C3N4-14401; Al8CaCo2-57533; Al8CaCu4-57539; Al8CaFe4-606314; Al8CaMn4-
57545; Al8CeCr4-606419; Al8CeCu4-57566; Al8CeFe4-57574; Al8CeMn4-57579; Al8Co2Pr-
600914; Al8Co2Sm-600915; Al8Cr4Dy-606767; Al8Cr4Er-606769; Al8Cr4Gd-156967;
Al8Cr4Ho-606790; Al8Cr4La-606792; Al8Cr4Nd-606817; Al8Cr4Pr-606830; Al8Cr4Tb-
606848; Al8Cr4Y-57664; Al8Cr4Yb-606871; Al8Cr5-606753; Al8Cu4Dy-606899; Al8Cu4Er-
606913; Al8Cu4Gd-606934; Al8Cu4Ho-606964; Al8Cu4Nd-607039; Al8Cu4Pr-607058;
Al8Cu4Tb-607133; Al8Cu4Th-607143; Al8Cu4U-57724; Al8Cu4Y-57727; Al8Cu4Yb-607191;
Al8DyFe4-57749; Al8DyMn4-607312; Al8ErFe4-607382; Al8ErMn4-607409; Al8ErMn4-
607412; Al8EuMn4-607460; Al8Fe4Gd-607505; Al8Fe4Hf-607535; Al8Fe4Ho-57752;
Al8Fe4La-607554; Al8Fe4Nd-607593; Al8Fe4Sc-164856; Al8Fe4Tb-57823; Al8Fe4Th-54990;
Al8Fe4U-54991; Al8Fe4Y-57842; Al8Fe4Yb-607748; Al8Fe4Zr-607756; Al8Fe5-169545;
Al8Fe5-169547; Al8Ge3Sr4-173215; Al8HoMn4-608195; Al8LaMn4-608299; Al8LuMn4-
608379; Al8Mn4Nd-608479; Al8Mn4Pr-608494; Al8Mn4Sc-99142; Al8Mn4Tb-608537;
Al8Mn4U-608550; Al8Mn4Y-57997; Al8Mn4Yb-608570; Al9ErNi3-105031; Al9Sr5-655752;
AsRb3-412872; As2Fe4La-168584; As2Fe4La-23080; As2Ni2Re5-35731; AsBO4-26891;
AsBO4-413436; AsBO4-413438; AsB6-68151; AsBeCsO4-74027; AsBiCu2O6-88111;
AsBiO4-30636; AsBi3Ni8S6-203066; AsC3H0I-171203; AsCaCoHO5-240725; AsCaHNiO5-
202422; AsCaHO5Zn-63285; AsCaPt-60828; AsCa2-166865; AsCa2ClO4-26234; AsCa2I-
65218; AsCa3N-657354; AsCd-432; AsCdNa-9571; AsCd3Cl3-23306; AsCeFO4-166934;
AsCeRh-90869; AsClO2Pb-66246; AsCl3-280796; AsCl3F6S-60076; AsCl5-412103; AsCo-
15065; AsCoHf-406953; AsCoRh-43896; AsCoS-31189; AsCoSe-41731; AsCr-23589;
AsCrO4-62132; AsCr3N-25760; AsCsF6-408070; AsCsO5Ti-280315; AsCsSe2-65299;
AsCs3O4-412392; AsCs3Se4-404082; AsCuHO5Zn-160894; AsCuMg-412296; AsCuMn-
72413; AsCuS-23826; AsCuSe2-42884; AsCu3-655109; AsCu3S4-14285; AsCu3Se4-610361;
AsDyO4-16512; AsErPd-409908; AsEuO4-409995; AsEuPt-60829; AsF3-35132; AsF5-65477;
AsF5H6N2-412507; AsF6In-417952; AsF6K-38130; AsF6Li-74831; AsF6Na-184563; AsF6Na-
184565; AsF6Rb-408069; AsF6Tl-417954; AsF7Sn-816; AsF9OS-10193; AsFe-15009;
AsFeLi-187132; AsFeLiO4-245182; AsFeS-15986; AsFeTa-610528; AsGa-43951;
AsGa2Rh5-56973; AsGeSe-100828; AsHHgO5Zn-281591; AsHO5PbZn-98385; AsHO5Zn2-
34868; AsH2LiO4-62024; AsH2LiO5Zn-409396; AsH36Li3N2Se4-409539; AsH4NaO5-4284;
AsH6NO4-28155; AsH6NO4-66208; AsHf2-610638; AsHoO4-155919; AsHoPd-71619; AsI3-
23003; AsI3La3-411803; AsI3S24-412399; AsKLi2-78938; AsKMoO6-203218; AsKNiO4-
63544; AsKO2-413149; AsKS5Sn-281038; AsLaRh-95191; AsLaTe-280231; AsLiMgO4-
67523; AsLiMnO4-245181; AsLiMoO6-15035; AsLiNiO4-51201; AsLiO3-202862; AsLiO5Ti-
78105; AsLiO5V-90991; AsLi2NaO4-73200; AsLi3O4-75927; AsLi3S3-59381; AsLuO4-2506;
AsMn-9496; AsMnNaO4-95087; AsMo-43188; AsNaNiO4-63353; AsNaO2-16762; AsNb-
S21
16585; AsNiTa-611079; AsNi2Si-83753; AsO2Rb-413150; AsO4P-31879; AsO4Sc-155920;
AsO4Tb-16329; AsO4Y-24513; AsO5RbSn-80977; AsO5RbTi-71907; AsO5Sb-36650;
AsPdZr-92440; AsRb-412594; AsRb3Se4-404080; AsRh-42572; AsRhTi-44052; AsRhV-
107965; AsRh2-611266; AsRu-42577; AsSSm-96227; AsS3Tl3-100292; AsS3Tl3-79580;
AsSe3Tl3-15148; AsTa-44068; AsTa2-611452; AsTeU-42366; AsTiZr-92989; AsV-42445;
AsZn-431; As2BaCo2-609848; As2BaCo2O8-260062; As2BaCr2-609849; As2BaCu2-236307;
As2BaCu4-89628; As2BaFe2-166018; As2BaMn2-41794; As2BaNi2-164197; As2BaNi2-
609856; As2BaNi2O8-27014; As2BaPd2-36377; As2BaRh2-165121; As2BaRu2-165119;
As2BaZn2-12146; As2BaZn2-417000; As2Ba2MnO2Zn2-85659; As2Ba2Mn3O2-32011;
As2Ba2O2Zn3-67998; As2Ba3O8-404438; As2Ba4O-33905; As2BeK4-300111; As2Br2Cd2Hg2-
240354; As2CaCo2-609899; As2CaCu4-32619; As2CaFe2-166016; As2CaGa2-422526;
As2CaNi2-23004; As2CaPd2-36372; As2CaRu2-602108; As2Ca4O-68203; As2Cd-16037;
As2CdGe-16736; As2CdK4-300190; As2CdSi-22187; As2CdSn-16737; As2CeCo2-610002;
As2CeNi2-68146; As2CePd2-604354; As2Cl3Hg3Tl-411520; As2Co-610034; As2Co2K-
610072; As2Co2La-610073; As2Co2Nd-610090; As2Co2Pr-610099; As2Co2Sr-610122;
As2CsRh2-610296; As2CsRu2-610297; As2Cu2Sr-78756; As2Cu3K3-32015; As2Cu4Eu-89627;
As2Cu4K-59207; As2Cu4Sr-89626; As2EuFe2-163211; As2EuNi2-610437; As2EuPd2-604348;
As2EuRh2-416982; As2Eu4O-1222; As2F2Mn-83635; As2F6MgXe2-281694; As2F2OSr2Ti2-
167013; As2Fe-41724; As2Fe2Rb-167329; As2Fe2Sr-163209; As2GdNi2-610591; As2Ge-
610599; As2GeMg-182368; As2GeTe4-68111; As2GeZn-16735; As2Ge3Te6-68113; As2Hf3-
610637; As2HgK4-402573; As2Hg4O7-391228; As2K3NbO9-202980; As2K4Zn-409919;
As2LaNi2-68145; As2LaPd2-604343; As2LaRu2-602111; As2MgSi-182367; As2Mg3-610828;
As2Mn3O2Sr2-32010; As2NaSn2-82366; As2NbNi-38412; As2NdNi2-611001; As2NdPd2-
604337; As2Ni-24204; As2Ni2Pr-611047; As2Ni2Sr-23005; As2OW2-15020; As2OSr4-33904;
As2OYb4-402951; As2O4-10436; As2O5-987; As2O6S-32581; As2O6Zn3-10400; As2O8Sr3-
420295; As2Os-995; As2Pd2Pr-604345; As2Pd2Sm-604347; As2Pd2Sr-36374; As2Rh2Sr-
165120; As2Ru-994; As2Sc3-16411; As2SiZn-22184; As2SnZn-18203; As2Sn2Sr-611428;
As2Sn2Sr-82371; As2Ti-20488; As2Zr-168665; As2Zr3-611611; As3Ba3In-402338;
As3Ba3NbO-408853; As3Ba3OTa-280155; As3CaFe4-260320; As3Ca3Ga-60126; As3Cd4K-
262032; As3Cd4Rb-262037; As3Ce4-43883; As3Co-655090; As3CoHf5-85884; As3Cr2Na3O2-
280946; As3Cs5Ge-65718; As3Cs5Si-65716; As3Eu4-610400; As3Ir-34046; As3K5O0-23302;
As3LaSi-39160; As3La4-610771; As3Mg4NaO2-59888; As3NaO2Ti2-421531; As3NaO2Zr2-
97956; As3NaZn4-262036; As3Nb5-16417; As3OSr3Ta-409567; As3Pr4-611220; As3Rb5Si-
300191; As3Rh-34052; As3Sn4-419884; As3Sr4-402110; As3Ti4-611492; As3Ti5-611496;
As3V5-611571; As3Yb4-611589; As3Yb4-95562; As4BaCu8-66017; As4Ca3In2-61336;
As4Cd2Ge-42132; As4ClCuS3-419754; As4CsF3-281641; As4Cu2S2-33588; As4Cu2S3-26724;
As4Cu6Hg3S2-200785; As4Cu6Hg3S2-20424; As4Eu3Pd4-79094; As4K7Nb-380109; As4K7Ta-
380110; As4Mo5-43186; As4NbRb7-380111; As4Nb5Pd4-412866; As4Pa3-611159; As4Pb9S5-
18097; As4Rb5TaTl2-85784; As4S3-16105; As4Ta5-36525; As4Th3-611490; As4U3-611550;
As5Cu4U2-69726; As5K6Sn3-71009; As6Ca5Ga2-27; As6Ca5Sn2-61037; As6Cu7Se3-15235;
As6Ir7Mg4-94393; As6Mg4Rh7-94391; As6Rh7Yb4-94392; As6Ru7U4-90326; As7Re3-26270;
As7Re3-611260; AuBa-419559; AuBa2Tl7-98964; AuBa4C4KO4-40854; AuBa4NaO8-73189;
AuBe2-109312; AuBr-200286; AuBrSe-2897; AuC2KN2-26498; AuC4H2KN4O-16043;
AuCaCd-420574; AuCaGa-106273; AuCaIn-408579; AuCa3-58401; AuCd-58409; AuCdEu-
S22
411544; AuCdYb-411545; AuCe-611711; AuCeCu5-107971; AuCeZn-418712; AuCe2P3-
411550; AuCl-6052; AuClF3P-415842; AuClO-8190; AuCsK2O2-62064; AuCsO-409553;
AuCsO-43006; AuCsTe-71653; AuCs3Ge4-413725; AuCs3Pb4-107448; AuEu-611844;
AuEuZn-420674; AuFTh2-89619; AuFU2-152058; AuF3-80478; AuF4K-10327; AuF4K-9906;
AuF4Na-9905; AuF4Rb-9907; AuF6K-415874; AuF6Li-165209; AuGa-58457; AuGeYb-
85835; AuGe4K3-413728; AuGe4Rb3-413724; AuHf2-58471; AuHo2-58480; AuI2K5O2-
40376; AuInSr-391422; AuKNa2O2-61226; AuKO2-15115; AuK3Se2-402000; AuK3Sn4-
107444; AuLa-612101; AuLaO3-73873; AuLa2-612100; AuLi2Sn2-55349; AuMgYb-411303;
AuMg2-58540; AuMn2-58548; AuN2-166465; AuNaSn-58554; AuNaSn-660108; AuNa2-
58527; AuNa2O2Rb-411460; AuNa3S2-202329; AuNd-612217; AuNi2Sn4-150127; AuORb-
409552; AuPb2-150949; AuPb2-56272; AuPb3-58567; AuPb4Rb3-107447; AuPr-612264;
AuRbTe-71652; AuRb2S4Sb-54507; AuRb3Sn4-107445; AuSbTl-391381; AuSb3-43504;
AuSm-612335; AuSnSr-412013; AuSn2-58587; AuTe2-38213; AuTh2-150644; AuTi-612407;
AuTl2-102798; AuYb-612473; AuYbZn-159306; AuYb2-58619; AuZr2-108025; AuZr2-
612511; Au2BaF2-39316; Au2BaF8-65289; Au2BaIn2-249562; Au2BaO4-80327; Au2Be-
150581; Au2BiDy5-156957; Au2BiEr5-156959; Au2BiHo5-156958; Au2BiTb5-156956;
Au2Br2H2N4-80216; Au2Br6Cs2-170696; Au2CaGe2-25333; Au2CaO4-79801; Au2CaSi2-412;
Au2Cd2Rb2S4-85582; Au2CeGe2-246610; Au2CeSi2-58424; Au2Cl6Cs2-6061; Au2Cs2I6-
59269; Au2Dy-58440; Au2Dy-611781; Au2In2Sr-249563; Au2La4O9-74989; Au2O7Se2-37009;
Au2Sr3-58596; Au3Ca2In4-410702; Au3Dy-611784; Au3Er-611810; Au3EuIn3-245680;
Au3F2La-78915; Au3Hf-611955; Au3Ho-58482; Au3In-612016; Au3In3Sr-245679; Au3KSn3-
249645; Au3K3Sb2-78977; Au3La3Sb4-612105; Au3Lu-612128; Au3O2Rb5-91308; Au3Pr3Sb4-
612269; Au3Rb2Tl-249924; Au3Rb3Sb2-78978; Au3Sb4Y3-957; Au3Sm-58585; Au3Sn2Yb2-
710044; Au3Sn4U3-612361; Au3Tb-612380; Au3Y-612464; Au3Yb-58620; Au3Zr-612509;
Au4Ca3-54547; Au4Hf-611961; Au4Li5-150973; Au4S3Tl2-51235; Au4Th3-601382;
Au7Cs4Sn2-107449; Au7Ge2K4-79111; Au7Rb4Sn2-58581; BLi-164842; B2Ba7Ir2-8156;
B2BrCs3H2-414584; B2BrH2K3-2120; B2BrH2Rb3-414583; B2Cs3H2I-98622; B2H2IK3-98619;
B2H2IRb3-98620; B2O24Se2Zn8-74057; B2P2-62748; B2Si3-615435; B3C2-446; B6Ir9Mg0-
163909; BBa2ClN2-418947; BBe2FO3-56847; BBe2F2KO3-77277; BBe2F2O3Rb-164854;
BBrEu2N2-409982; BBrN2Sr2-261795; BCF4H6N3-202434; BC3H2N-249799; BC7-181956;
BCrO3-43311; BF3-24783; BF4Li-171375; BF5Li2-426821; BFeO3-34474; BH0Li4N3-171352;
BI2Zr6-202103; BInO3-75254; BLi3N2-155128; BLi3O3-9105; BLuO3-16525; BNaO2-34645;
BO3Sc-65010; BO3Ti-402039; BO3V-45060; BO3Yb-160141; BS2Tl-71593; B2BaO6Ti-
97972; B2BaO6Zr-95527; B2Ba2MgO6-75986; B2CCe-40164; B2CN-183792; B2CTh-68414;
B2CU-44142; B2CaO6Sn-30998; B2Ca3Ni7-36505; B2Ca3O6-1894; B2Ce2Ir5-97343; B2Co3Zr-
16179; B2Eu3O6-86479; B2F4-27867; B2H8KNa-163377; B2Hg3O6-71261; B2K2O6Zr-67982;
B2Li2-1; B2MgO6Sn-28266; B2Mo-40907; B2O6SnSr-28267; B2O6Sr3-93395; B3Ba4N6Na-
401210; B3Ca4LiN6-400339; B3Eu4LiN6-400465; B3H3O4Zn8-416894; B3LiN6Sr4-402173;
B3Mo-167734; B3N6NaSr4-92577; B3Na3O6-15967; B3Na3O9Sc2-245063; B3Na3S6-79613;
B3O6Rb3-59826; B3O9ScSr3-75339; B3Rb3S6-79615; B4C-29093; B4CeO2Sc3-90839;
B4Fe3LaO2-83506; B4Fe3NdO2-83507; B4Fe3O2Tb-96455; B4Ga3NdO2-200321; B4LaO2Sc3-
89013; B4Mo2-39554; B5W2-20326; B6BaNi2-100287; B6Ba2CaO2-30890; B6Ba2MnO2-
391013; B6Ba2Ni9-100288; B6BrK3O0-172400; B6CaNi2-36507; B6Co4O3-96561; B6EuNi2-
86371; B6Ni2Sr-100286; B6O-71065; B6O3Zn4-100290; B6O8ScSr6Y-67648; B7ClCo3O3-
S23
158297; B7ClO3Zn3-55444; B9BaLiO5-93013; B9BaNaO5-93014; B9MgN-280938;
Ba2Li8N6Na5-417928; BaBiO3-151895; BaCN2-75041; BaCO3-158389; BaC2CeFO6-74178;
BaC2F2O6Pb2-280899; BaC2MgO6-24435; BaCeO3-79627; BaCrF6-10341; BaCu2Ga-615828;
BaF2-183923; BaF2-41649; BaF2-41650; BaF3Li-45310; BaF4Pd-108991; BaF6Ge-26614;
BaF6Ni-35396; BaF6Pb-25521; BaF6Rh-6038; BaF6Si-26613; BaF6Sn-33788; BaF6Ti-33789;
BaF7Ta-417251; BaFeO3-28917; BaGe2Pt4-174551; BaGe2Li2Mg2-409576; BaH9Re-247108;
BaH9Re-247109; BaHgO2-74076; BaLi2Mg2Si2-409575; BaMnO3-66822; BaMn3O38Ti8-
81584; BaMo2O2P3-68560; BaMo6S8-615980; BaMo6S8-62157; BaNb2OV2-165097;
BaNi2O8P2-280167; BaNi2O8V2-96086; BaNi4O8-20898; BaO8V3-51472; BaO3Ru-10253;
BaO3Si-156705; BaO3Tb-2752; BaO3Ti-6102; BaPb3-419973; BaRu4Sb2-42963; Ba2BiIrO6-
174290; Ba2BiO6Sb-172761; Ba2BiO6Ta-153120; Ba2BiO6Yb-80902; Ba2Bi2O6-28164;
Ba2BrCuO2-67395; Ba2BrN-262056; Ba2C3Cs2O9-73170; Ba2ClCo4O7-245991; Ba2ClCuO2-
1038; Ba2ClN-262051; Ba2ClP-28134; Ba2CoF6-21057; Ba2Cr7O4-2766; Ba2FN-262049;
Ba2F6Ni-21056; Ba2F6Zn-21054; Ba2HN-67510; Ba2IrLaO6-152678; Ba2IrO6Sr-74030;
Ba2Ir3O9-54725; Ba2LaO6Ru-155549; Ba2LaO6Sb-153136; Ba2LaO6Ta-160170;
Ba2La2MnO2W2-54667; Ba2Mg7-58660; Ba2Nb5O32-69991; Ba2NbO6Pr-245457; Ba2NiO6Te-
25005; Ba2O6PrSb-153137; Ba2O6SrTe-246109; Ba2O6SrTe-246109; Ba2O6SrW-246114;
Ba2Re6S-30737; Ba3BeCl8Zr6-33993; Ba3BiNaO6-72839; Ba3Cl2Fe2O5-48178; Ba3Cr2O8-
9457; Ba3Cr2S6-97540; Ba3Dy4O9-72480; Ba3Er4O9-72481; Ba3Ho4O9-33807; Ba3IrNaO6-
405134; Ba3Lu4O9-38383; Ba3Mn2O8-280045; Ba3NaNbO6-72330; Ba3NaO6Ru-405133;
Ba3NaO6Ta-72331; Ba3Nb2O8-95193; Ba3NiO4-30662; Ba3O8P2-18110; Ba3O8P2-30634;
Ba3O8V2-14237; Ba3O9W2-100689; Ba3O9Y4-87118; Ba4CeMn3O2-99661; Ba4ClO8Os6-
82910; Ba4ErO2Ru3-174186; Ba4HoO2Ru3-160868; Ba4Mn3NdO2-156305; Ba4Mn3O2Pr-
99662; Ba4NaO2Sb3-160173; Ba4O2Ru3Tb-160870; Ba4O2Ru3Zr-47132; Ba4O6Pt-65706;
Ba6NNa6-78394; Ba6N6OOs2-419467; Ba6N6ORe2-419636; Ba6O8W4-9725; Ba9O24Sc2Si6-
75175; Be7Nb2-58724; Be7Ru3-58735; Be7Ti2-109217; Be7Zr2-58759; BeCl2-173561;
BeCsF3-290357; BeF2-173557; BeF2-173558; BeF2-9481; BeF4Li2-14360; BeK4P2-300110;
Be2CsF5-2801; Be2F8K2Pb-9902; Be2F8K2Sr-109005; Be2O4Si-28003; Be3Ca3F2Li2O2Si3-
39389; Be3Nb-58723; Be3Ru2-616409; Be4C6K6O9-412642; Bi2GeO20-39611; Bi2MnO20-
75079; Bi2O20Si-422389; Bi2O20Ti-167355; Bi2O20Zn-62479; BiCsF6-15122; BiF3-25567;
BiF3-655136; BiF3-9015; BiF4K-63166; BiF4Li-65404; BiF5-25023; BiF6K-25024; BiF6Li-
15119; BiF6Na-15120; BiF6Rb-15121; BiFeO3-15299; BiK3O3-407293; BiNa3O3-23347;
Bi24Ge2O40-68431; Bi24Mn2O40-75390; Bi24O40Pb2-75392; Bi24O40Si2-68430; Bi24O40Ti2-
75389; Bi2Ni3S2-159364; Bi2Pd3S2-417634; Bi3Eu4-616649; Bi3Gd4-616662; Bi3La4-616755;
Bi3Nd4-616855; Bi3Nd4-616860; Bi3Sm4-617132; Bi3Tb4-617161; Bi3Yb4-617255;
Bi4Ce3Pd3-419162; Bi4Cu3La3-167250; Bi4Ge3O2-260560; Bi4O2Si3-402349; Bi4Rh-58854;
Bi4Th3-617222; Bi4U3-617239; Br5CoTh6-33926; Br5FeTh6-33925; BrF3-31689; BrF4K-
10326; BrF4Rb-65713; BrF5-31690; Br2Cs2F2-84021; Br2Cs2F2-84022; Br2Hg3Te2-27402;
Br3La3Si-411800; C2Cl2N2O4P4S2Sb4-80097; C2O2Ru4Se4-92913; C8Er0Mn3-603261;
C8Ho0Mn3-603286; C8Lu0Mn3-603277; C8Mn3Tb0-603285; C8Ru2Th-79240; CCl3Gd3-37323;
CF4-2848; CF4-66659; CLi2O3-66942; CLi2O3-96486; C22F4-411879; C3Ce2-74661;
C3Cs2O9Sr2-169231; C3Dy2-2449; C3Er2-86291; C3F6-151184; C3Gd2-602774; C3Ho2-42497;
C3La2-618154; C3Lu2-618221; C3N4-97565; C3Nd2-2447; C3O9Rb2Sr2-169232; C3Pr2-74662;
C3Pu2-24620; C3Sc4-42760; C3Tb2-74663; C3Tm2-86292; C3U2-618999; C3Yb2-86293;
S24
C60Eu6-88616; C60K6-66879; Ca2Li6N6O3Re4-411462; CaCo4Cu3O2-169095; CaCsF3-45309;
CaCs2F4-82616; CaCuF4-9928; CaCu3Ge4O2-1303; CaCu3Mn4O2-156374; CaCu3O2Pt4-
248230; CaCu3O2Ru4-51894; CaCu3O2Sn4-162100; CaCu3O2Ti4-167254; CaCu3O2V4-
250094; CaF2-44937; CaF2-51237; CaF2-51239; CaF2-656449; CaF3K-154074; CaF3Rb-
201253; CaF4Pd-32674; CaF4Zn-31366; CaF6Pb-25522; CaF6Sn-35713; CaFe3O2Ti4-79277;
CaFe4Sb2-42961; CaNa0Sn2-240006; CaO3Si-240453; Ca2F4-246961; Ca2K8O24U6-91783;
Ca3Cr2O2Si3-158537; Ca3Fe2Ge3O2-280047; Ca3Ga2O2Si3-27387; Ca3Ga4Ni4-58899;
Ca3Ge3O2Y2-280048; Ca3Hg-58903; Ca3Ir4Si4-95788; Ca3Mn2O2Si3-27388; Ca3N2-34678;
Ca3O2Sc2Si3-27389; Ca3O2Te2Zn3-67045; CdCsF3-290344; CdCuF4-73478; CdCu3O2Ti4-
39467; CdF2-183501; CdF2-250165; CdF3K-44788; CdF3Rb-49587; Cd2F8Tb-86146;
Cd3Ge3O2Sc2-20216; Cd3N2-416908; Cd3P2-620218; Cd4N2P6S-71019; CeF3-16965; CeF3-4;
CeF3-42470; CeFe4P2-52852; CeP2Ru4-50595; CeRu4Sb2-621988; Ce2O3-96202; Ce3Cu3Sb4-
658638; Ce3Ni6Si2-25622; Ce3Pt3Sb4-621896; Ce3S4-31602; Ce3Se4-622113; Ce3Te4-43676;
Ce4Sb3-52905; Ce6Ni6P7-2243; Ce6P7Pd6-30851; ClF-406442; ClF3-19079; ClF3Sn2-2088;
Cl2Hg3Se2-27400; Cl2Hg3Te2-27401; Cl3F2Sb-200039; Cl3F2Sb-380014; Cl4CsLi3-245975;
Cl4FSb-30629; Cl4FTa-27413; Cl4Li2Zn-202743; Cl8FeLi6-73217; CoF2-98785; CoF3-16672;
CoF3-29133; CoF3K-15246; CoF4K2-33522; CoF4Rb2-69683; CoF6Rb2-9701; CoF6Zr-83724;
CoP3-624594; CoSb3-41620; CoU-625521; Co2F7K3-33524; Co6Nd2Sn-240094; Co7Ge6Zr4-
52996; CrCs2F6-29007; CrF2-31827; CrF3-59967; CrF3K-172844; CrF4-78778; CrF4Sr-26105
(4); CrF5-419661; CrF6Nb-75384; CrF6Rb2-29006; CrF6Zr-35719; CrGa4-626026; Cr2F5-
80639; Cr2Fe3O2Si3-27375; Cr2Mn3O2Si3-27379; Cs8O6Tl8-421376; CsCuF4-35264; CsEuF3-
49577; CsF-44288; CsF-53832; CsF-61563; CsF2H-45858; CsF2Li-18020; CsF3Hg-15168;
CsF3Mg-290360; CsF3Mg-49584; CsF3Pb-290350; CsF3Sr-49578; CsF3Yb-49579; Cs2CuF6-
65259; Cs2F4Hg-72353; Cs2F6Ge-35547; Cs2F6Mn-47201; Cs2F6Mn-76272; Cs2F6Si-26871;
Cs2F6Si-38548; Cs2O3-627061; Cs3F5Li2-245964; Cs3F6Tl-19076; Cs3F6Y-19078; Cu2S3Sb4-
25707; Cu5Si4-36254; CuF-52273; CuF2-26576; CuF2-9788; CuF3K-21108; CuF3Rb-69656;
CuF4K2-15372; CuF4K2-24408; CuF4Sr-9927; Cu2F7K3-15373; Cu3DyMn4O2-153871;
Cu3Er3Sb4-658645; Cu3GdMn4O2-153870; Cu3Gd3Sb4-658641; Cu3HoMn4O2-153872;
Cu3Ho3Sb4-658644; Cu3LaO2Ru4-51897; Cu3La3Sb4-658637; Cu3Mn4O2Pr-153867;
Cu3Mn4O2Th-34316; Cu3Mn4O2Tm-153873; Cu3Mn4O2Y-38419; Cu3Mn4O2Yb-153874;
Cu3NdO2Ru4-51896; Cu3Nd3Sb4-57207; Cu3Nd3Sb4-658635; Cu3O2Ru4Sr-51895; Cu3O6Te-
1529; Cu3O6Te-26990; Cu3Pr3Sb4-658639; Cu3S3Sb-31113; Cu3Sb4Tb3-658642; Cu3Sb4U3-
657096; Cu3Sb4Y3-658636; Cu3Sn4U3-629298; Cu5Zn8-2092; Dy2Fe32O2-9639; Dy2O3-
66736; Dy3Fe5O2-23856; Dy3Ga5O2-409391; Dy3S4-630201; Dy3Se4-630252; Dy4Ga2Ni-
629724; Dy4Ni2Sn25-160045; Dy4Sb3-630245; ErF3-81411; Er2O3-39521; Er3F0K-418210;
Er4Sb3-600631; EuF2-29025; EuFe4P2-79925; EuNa0Sn2-172209; EuRu4Sb2-79928; Eu3F0Rb-
14027; Eu3Ga4Ni4-103395; Eu3S4-100522; F0KTb3-28214; F0KY3-155137; F0KYb3-28258;
F2Fe2Li3Na3-17056; F2KTb3-51125; F2P4Pt-418726; F3KSb4-24740; F3KSb4-4049; F4N2Ni-
26397; F5Nb6-25769; FK-53824; FK-61558; FLi-184904; FLi-62361; FMg2N-262328; FNa-
262837; FRb-43436; FRb-53828; FSeY-1827; FTl-16112; FTl-16113; FTl-28495; FTl-
30268; FTl-90993; FTl-90994; FTl-9873; F2Fe-14143; F2Ge-18030; F2HK-9345; F2HRb-
45859; F2Hg-33614; F2Hg2-23719; F2Hg2-27700; F2Hg3S2-16927; F2Kr-23534; F2Kr-279623;
F2Mg-422263; F2Mg-51242; F2Mg-51243; F2Mg-56506; F2Mg-94284; F2Mn-12167; F2Mn-
200641; F2Mn-20365; F2Ni-26605; F2Ni-34307; F2Pb-161391; F2Pb-60014; F2Pd-100567;
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F2Pd-16763; F2Sn-14194; F2Sn-14195; F2Sn-308; F2Sr-168801; F2Sr-41402; F2Ti-68400;
F2V-201245; F2Xe-28334; F2Zn-184219; F3Fe-202047; F3Fe-240398; F3Fe-52167; F3FeK-
44784; F3FeRb-49586; F3Ga-22197; F3HgRb-15169; F3Ho-200955; F3I-411036; F3In-18028;
F3Ir-77619; F3KMg-40476; F3KMn-246919; F3KMn-246921; F3KMn-43721; F3KMn-75412;
F3KMn-75414; F3KNi-15426; F3KPd-73167; F3KV-28145; F3KZn-56097; F3La-164054;
F3La-164055; F3La-167553; F3La-16964; F3La-246323; F3La-27089; F3La-28538; F3La-3;
F3La-34108; F3La-96133; F3La-96134; F3MgNa-171813; F3MgRb-49585; F3Mg3N-18320;
F3MnRb-43722; F3Mo-30612; F3Mo-68527; F3NaV-60611; F3Nb-25596; F3Nd-16967; F3Nd-
63049; F3Nd-63050; F3Ni-87943; F3PbRb-49591; F3Pd-16675; F3Pr-16966; F3Pu-29013;
F3RbV-28146; F3RbYb-49590; F3Rh-29134; F3Ru-16673; F3Sb-30411; F3Sc-261067; F3Sc-
30215; F3Ta-30613; F3Tb-167474; F3Ti-52162; F3Tl-10365; F3U-24966; F3V-30624; F3Y-
15961; F3Y-6023; F3Yb-9844; F4Ge-202558; F4Hf-66008; F4HgRb2-72352; F4Ir-23483;
F4K2Mn-23184 (33); F4K2Ni-73450 (55); F4K2Zn-100298 (98); F4LiLu-152948; F4LiSc-
413966; F4LiY-39563; F4LiY-55692; F4LiYb-9914 (6); F4MgRb2-69681 (6); F4Nb-23949;
F4Pb-16795; F4PbPd-108992; F4Pd-1555; F4PdSr-108990; F4Pt-71579; F4S2Yb3-92497; F4Se-
85451; F4Si-14122; F4Si-63184; F4Sn-16794; F4SrZn-31367; F4Te-9869; F4V-65785; F4Xe-
27467; F4Zr-35100; F5H8N-38338; F5I-6021; F5Mo-26644; F5Nb-26647; F5P-62554; F5U-
200459; F5U-31658; F6FeZr-100301 (48); F6FeZr-35716 (90); F6GeRb2-68982 (27); F6HfK2-
47244; F6HfV-94455; F6KP-25576; F6K2Mn-47213; F6K2Ni-41416; F6K2Si-73722; F6K3Mo-
4403; F6K3W-51264; F6LiNb-165202; F6LiP-74830; F6LiSb-23924; F6Li2Zr-409667;
F6MnRb2-47207; F6Mo-153; F6Mo-1879; F6MoNa-31033; F6NaP-90615; F6NaSb-25538;
F6NaSb-56251; F6NiRb2-29005; F6O2Pt-28345; F6O2Sb-78849; F6PTl-28899; F6Pb2-23467;
F6PdRb2-28675; F6Rb2Si-38547; F6Rb3Tl-19075; F6Rb3Y-19077; F6S-214; F6S-41229; F6S-
63360; F6S-63362; F6SiTl2-38549; F6SiTl2-52292; F6Sn2-33786; F6Te-67609; F6TiTl3-42154;
F6TiZr-94456; F6U-2499; F6VZr-94454; F6W-4027; F6Xe2-18128; F7I-31691; F7IXe-26059;
F7K3Mn2-33525; F7K3Ni2-33523; F7K3Zn2-100299; F7Li3Th-1726; F7Re-78311; F8Na2U-
165293; F8Na3Pa-16153; F8Sn3-32592; F9U2-35288; FeGa6Ge6Tb4-281082; Fe2Ge3Mn3O2-
18111; Fe2Mg3O2Si3-27373; Fe32Ho2O2-9827; Fe32O2Y2-9640; Fe3Mn2O2Si3-27378;
Fe3O2Si3V2-27376; Fe4LaP2-1286; Fe4LaSb2-53490; Fe4NdP2-93364; Fe4NdSb2-79927;
Fe4P2Pr-93363; Fe4P2Tb-245293; Fe4P2Th-200827; Fe4P2U-633114; Fe4P2Yb-156464;
Fe5O2Si3-27377; Fe5O2Tb3-9233; Fe5O2Y3-29235; Fe5O2Yb3-23854; Fe5Si3-161132;
Ga2PdTb4-153210; Ga2PdY4-103910; Ga2PtTb4-153211; Ga2PtY4-153909; GaI3La3-409561;
GaLi3N2-25566; GaLi5O4-16926; Ga3Na3O2Te2-418645; Ga4Mn-634630; Ga5Ho3O2-409390;
Ga5O2Tb3-20831; Ga5O2Y3-23852; Ga5O2Yb3-23851; Ga7Ni3-408313; Gd-104045; GdLiO2-
422561; Gd2O3-40473; Gd3I3Si-67361; Gd3Ni6Si2-601071; Gd3O2Sb5-65147; Gd3S4-636328;
Gd3Se4-636389; Gd4Sb3-601400; Ge-181072; GeI3La3-414174; GeLi2O5Ti-250297; Ge3La4-
76313; Ge3N4-97569; Ge4Li5-43235; Ge6Ir7Mn4-153070; Ge6Ir7Yb4-413984; Ge6Lu4Rh7-
90200; Ge6Lu4Ru7-90199; Ge6Os7Sc4-637471; Ge6Rh7Sc4-84201; Ge6Rh7Yb4-413983;
Ge7Ir3-53656; Ge8Na6Pt8-32038; H5Th4-24686; H4Li2Mg-181325; Hf3N4-97997; Hg3O6Te-
30325; Hg4Ni-639118; Hg4Pt-659824; Ho2O3-27773; Ho4Sb3-601431; ILiO3-20032; ILiO3-
40363; I3La3P-411801; I3La3Pb-409796; I3La3Sb-411804; In2O3-14387; In7Pd3-408314;
In7Pt3-59500; K0Pb48-410090; K2O3Sn2-40463; K3S4Sb-41895; K8O24Sr2U6-91784; LaP2Ru4-
50596; La2O3-96201; La3S4-56782; La3Se4-60208; La3Te4-642013; La4O9Re6-22207;
La4O9Re6-36083; La4O9Ru6-100098; La4Pb3-641648; La4Rh3-641734; La4Sb3-10441;
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La6P7Pd6-30850; Li2Mg3Si4-39596; Li5Si4-159397; LiN2P-66007; Li2O3Si-100402; Li2O4S-
153807; Li2O4S-58; Li2O4W-10479; Li2O4W-15395; Li2O5Si2-78562; Li3NbO4-30246;
Li3Nd3O2W2-245640; Li3O4P-10257; Li3O4P-20208; Li3O4Ta-37126; Li3O4V-19002;
Li4O4Ti-75164; Li6O4Zn-62137; Li6O7Si2-25752; Li6O7Zr2-41321; Li7O6Ta-74950; Lu2O3-
33659; Mg3Mn2O2Si3-27374; Mg3N2-23522; Mg3O2Si3V2-27372; Mg3P2-26875; Mg3Sb2-
181285; Mg4P6Rh7-94390; Mn2O3-9091; Mn3O2Si3V2-27380; Mn5O2Si3-27382; Mn7NaO2-
19022; Mo3Sb7-24303; N2P6SZn4-76440; N24O2P2Zn8-417324; N2O4-29047; N2Zn3-84918;
N3U2-644812; N4Si3-97567; N4Zr3-97998; Na0Sn2Sr-240007; Na0Sn2Yb-172210; Na3O3Sb-
23346; Na3S4Sb-44707; Na3SbSe4-65141; Na6O4Pb-21059; NbS4Tl3-600246; NbSe4Tl3-
600249; Nb3Sb2Te5-417101; NdOs4Sb2-79929; Nd3S4-645823; Nd4O9Os6-200870; Nd4Sb3-
645890; NiP3-23714; Ni3Pb2S2-159363; Ni3Sb4U3-23078; Ni3Sb4Zr3-87995; Ni3Sn4Th3-
657422; Ni3Sn4U3-105374; Ni3Sn4U3-646805; Ni6PbY2-54614; O2Pr3Sb5-22502; O2Sb5Yb3-
20945; OTa2-28387; O36P2Sc4-1719; O3V2-260212; O4Pt3-27836; O6Rb4-25718; O6Sr2WZn-
28599; O8SnTe3-9077; O8Te3Ti-9076; O8Te3Zr-9079; Os3Sn7-54605; Os4PrSb2-155178;
P2Ru4Tb-245294; P3Rh-23712; P3Ti4-648219; P4Th3-25724; P4U3-25725; Pb-54314;
Pb2Pd3S2-159365; Pd6S7-32053; Pr3Pt3Sb4-649207; Pr3S4-649249; Pr3Se4-649323; Pr3Te4-
649411; Pr4Sb3-649308; Pt3Sn4U3-649697; Re7Si6U4-2471; RhSb3-34049; Rh7Sb6Yb4-
409885; Rh7Sb6Yb4-421488; Ru3Sn7-54510; Ru4Sb2Sr-42962; S3Tm2-39240; S3Yb2-72010;
S4Sm3-2245; S4TaTl3-16571; S4Tl3V-16572; S4Tl3V-600245; Sb-108182; Sb3Tb4-601429;
Sb3Yb4-43031; Sb3Yb4-651757; Sb4Th3-16655; Se-104187; Se4Sm3-651872; Se4TaTl3-52431;
Se4Tb3-651982; Se4Tl3V-600248; Se4U3-23710; SiV3-52472; Sm3Te4-652658
Reference
1. Gong, W.; Tabata, T.; Takei, K.; Morihama, M.; Maeda, T.; Wada, T.
Crystallographic and Optical Properties of (Cu, Ag)2ZnSnS4 and (Cu, Ag)2ZnSnSe4
Solid Solutions. Phys. Status Solidi C 2015, 12, 700−703.
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