STPS80H100C

Datasheet

100 V power Schottky rectifier

A1 Features
K
A2 • High reverse voltage
• Negligible switching losses
• Low forward voltage drop
• Low leakage current
• High temperature
• Low thermal resistance
A2 • Avalanche capability specified
K
A1 • ECOPACK®2 compliant
Max247

Applications
• Switching diode
• SMPS
• DC/DC converter
• LED lighting
• Desktop power supply

Description
This dual diode common cathode Schottky rectifier is suited for switched mode power
supplies and high frequency DC to DC converters.
Product status
Packaged in Max247, the STPS80H100C is optimized for use in high frequency
STPS80H100C computer and telecom converters.
Product summary

IF(AV) 2 x 40 A

VRRM 100 V

Tj(max.) 175 °C

VF(typ.) 0.65 V

DS1749 - Rev 4 - July 2018 www.st.com

For further information contact your local STMicroelectronics sales office.
 STPS80H100C
Characteristics

1 Characteristics

Table 1. Absolute ratings (limiting values, per diode at 25 °C, unless otherwise specified)

Symbol Parameter Value Unit

VRRM Repetitive peak reverse voltage 100 V

IF(RMS) Forward rms current 50 A

TC = 150 °C Per diode 40

IF(AV) Average forward current, δ = 0.5, square wave A
TC = 140 °C Per device 80

IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 400 A

PARM Repetitive peak avalanche power tp = 10 µs, Tj = 125 °C 2822 W

Tstg Storage temperature range -65 to +175 °C

Tj Maximum operating junction temperature(1) +175 °C

1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 2. Thermal resistance parameters

Symbol Parameter Max. value Unit

Per diode 0.7

Rth(j-c) Junction to case °C/W
Total 0.5
Rth(c) Coupling 0.3 °C/W

When the diodes 1 and 2 are used simultaneously:

ΔTj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)
For more information, please refer to the following application note:
• AN5088 : Rectifiers thermal management, handling and mounting recommendations

Table 3. Static electrical characteristics (per diode)

Symbol Parameter Test conditions Min. Typ. Max. Unit

Tj = 25 °C - 20 µA
IR (1) Reverse leakage current VR = VRRM
Tj = 125 °C - 7 20 mA

Tj = 25 °C - 0.80
IF = 40 A
Tj = 125 °C - 0.65 0.70
VF (2) Forward voltage drop V
Tj = 25 °C - 0.94
IF = 80 A
Tj = 125 °C - 0.79 0.84

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: tp =380 µs, δ < 2%

To evaluate the conduction losses, use the following equation: P = 0.56 x IF(AV) + 0.0035 x IF 2 (RMS)
For more information, please refer to the following application notes related to the power losses :
• AN604: Calculation of conduction losses in a power rectifier
• AN4021: Calculation of reverse losses on a power diode

DS1749 - Rev 4 page 2/10

 STPS80H100C
Characteristics (curves)

1.1 Characteristics (curves)

Figure 1. Average forward power dissipation versus Figure 2. Average forward current versus ambient
average forward current (per diode) temperature (δ = 0.5, per diode)
PF(AV) (W) IF(AV)(A)
35 50
δ=0.5
δ=1 45 Rth(j-a)=Rth(j-c)
30 δ=0.2
40
25 δ=0.1
35
δ=0.05
30
20
25
15 20
Rth(j-a) =5 °C/W
10
15
T
10 T
5 5 Tamb (°C)
IF(AV)( A) δ =tp/T tp
0
δ =tp/T tp
0
0 5 10 15 20 25 30 35 40 45 50 0 25 50 75 100 125 150 175

Figure 4. Relative variation of thermal impedance junction

Figure 3. Normalized avalanche power derating versus to case versus pulse duration
pulse duration (Tj= 125 °C)
Zth(j-c)/ Rth(j-c)
PARM (t p )
PARM (10 µs) 1.0
1

0.8

0.1
0.6

0.4
0.01

0.2
Single pulse
t p(µs) t p (s)
0.001
1 10 100 1000 0.0
1E -3 1E -2 1E -1 1E +0

DS1749 - Rev 4 page 3/10

 STPS80H100C
Characteristics (curves)

Figure 5. Reverse leakage current versus reverse voltage

applied (typical values, per diode) Figure 6. Junction capacitance versus reverse voltage
applied (typical values, per diode)
IR (µ A)
C(nF)
1E +4 5. 0
Tj=125 °C F=1 MHz
Vosc=30 mVRMS
Tj=25 °C
1E +3

1E +2 1. 0

1E +1

Tj=25 °C
1E +0
VR (V)
V R (V)
0. 1
1E -1 1 2 5 10 20 50 100
0 10 20 30 40 50 60 70 80 90 100

Figure 7. Forward voltage drop versus forward current (maximum values, per diode)

IF (A)

500
Tj=125 °C
Maximum values

100

Tj=25 °C
Maximum values

10

V (V)
F
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

DS1749 - Rev 4 page 4/10

 STPS80H100C
Package information

2 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®
packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions
and product status are available at: www.st.com. ECOPACK® is an ST trademark.

DS1749 - Rev 4 page 5/10

 STPS80H100C
Max247 package information

2.1 Max247 package information

• Epoxy meets UL94, V0
• Cooling method: by conduction (C)

Figure 8. Max247 package outline

DS1749 - Rev 4 page 6/10

 STPS80H100C
Max247 package information

Table 4. Max247 package mechanical data

Dimensions

Ref. Millimeters Inches (for reference only)

Min. Max. Min. Max.

A 4.70 5.30 0.185 0.208

A1 2.20 2.60 0.086 0.102
b 1.00 1.40 0.039 0.055
b1 2.00 2.40 0.078 0.094
b2 3.0 3.40 0.118 0.133
c 0.40 0.80 0.015 0.031
D 19.70 20.30 0.775 0.800
E 15.30 15.90 0.602 0.626
e 5.35 5.55 0.210 0.218
L 14.20 15.20 0.559 0.598
L1 3.70 4.30 0.145 0.169

DS1749 - Rev 4 page 7/10

 STPS80H100C
Ordering information

3 Ordering information

Table 5. Order code

Order code Marking Package Weight Base qty. Delivery mode

STPS80H100CY STPS80H100CY Max247 4.90 g 30 Tube

DS1749 - Rev 4 page 8/10

 STPS80H100C

Revision history

Table 6. Document revision history

Date Revision Changes

July-2003 2B Last release.

21-Jun-2010 3 Updated package illustration on page 1 and Section 2: Package information on page 5.
Updated Figure 3. Normalized avalanche power derating versus pulse duration (Tj= 125 °C) and
02-Jul-2018 4
Table 1. Absolute ratings (limiting values, per diode at 25 °C, unless otherwise specified).

DS1749 - Rev 4 page 9/10

 STPS80H100C

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DS1749 - Rev 4 page 10/10