Lab No

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LAB NO.

1
MOSFET-BASED COLPITTS OSCILLATOR
➢ Objectives:
1. Understanding and studying the working of simple oscillators
2. Studying the impact of bias loads on the MOSFET performance
➢ Introduction

The resonant frequency for Colpitts oscillator is calculated using the following formula:

1
𝑓𝑟 =
2𝜋√𝐿𝐶𝑇 Eq. (1)

Whereas CT can be calculated by the equation:

𝐶1 × 𝐶2
𝐶𝑇 = Eq. (2)
𝐶1 + 𝐶2

EXPERIMENT 1: Evaluating the loop gain

METHODOLOGY:

• The links and power cables were attached as shown in the schematic to complete the
circuit.
• VDD = 5V and VSS = 0V
• Input signal voltage VIN was applied and corresponding output signal voltage VTP2
was measured.
𝑉𝑇𝑃2
• Gain in dB was calculated using the formula 𝐺 = 20 𝑙𝑜𝑔 𝑉𝐼𝑁
.
• Frequency was varied to measure the output signal at a constant input voltage VIN =
200mV.
• Phase difference and amplitude of the signal were recorded.

OBSERVATIONS:

Frequency VTP2 Phase Difference Gain


100 kHz 1.10 V - 95.23o 13.9 dB
200 kHz 585 mV - 92.35o 8.49 dB
400 kHz 381 mV - 86.1o 4.77 dB
600 kHz 359 mV - 83.7o 4.25 dB
800 kHz 565 mV - 79.5o 4.39 dB
1 MHz 624 mV 86.2o 9.06 dB

F REQU ENCY A GA INST GA IN


16 13.9
14
12
10 8.49 9.06
GAIN (DB)

8
6 4.77 4.39
4.25
4
2
0
1 10
LOG FREQUENCY

Fig 1: log frequency against gain of the oscillator


F REQU ENCY A GA INST PHA SE DIF F ERENCE
100 86.2

80
60
PHASE DIFFERENCE (DEGREES)

40
20
0
-20 1 10

-40
-60 -79.5
-86.1 -83.7
-80 -95.23 -92.35

-100
-120
LOG FREQUENCY

Fig 2: log frequency against phase difference of the oscillator

DISCUSSION:

Resonance frequency observation: The gain and phase difference at resonance


frequency abruptly increase. Whereas the measured resonance frequency in the
experiment is 1 MHz, and the gain at this resonance frequency value is 9.06 dB.

Fig 3: Small signal equivalent circuit of the Colpitts oscillator

The inductor L is used to close the feedback loop by connecting it from the drain to source.
At resonance, the oscillation condition is gmRG ≥ C1/C2.

EXPERIMENT 2: Oscillator Circuits

METHODOLOGY:

• The links and power cables were attached as shown in the schematic to complete the
circuit.
• VDD = 5V and VSS = 0V
• Reading for VTP1 was taken as the output voltage.
• Resonant frequency was recorded.
OBSERVATIONS:

a. Oscillation frequency = 1.1 MHz


b. Oscillation amplitude = 6.87 V
c. Observed waveform

T = 9.09 x 10-7 s
Amplitude = 6.87 V

Fig 4: Observed output waveform sketch

The amplitude and gain are the highest at resonant frequency of 1.1 MHz.

d. Supply current = 0.225 mA


e. Power consumption:
P = IV
= 0.225x10-3 x 6.87
= 1.55 mW
f. Readings for NMOS as active load:
• Oscillation frequency = 1.1 MHz
• Oscillation amplitude = 3.10 V
• Supply current = 0.225 mA
• Power consumption:
P = IV
= 0.225x10-3 x 3.10
= 69.8 uW
g. Readings for NMOS as active load:
• Oscillation frequency = 1.1 MHz
• Oscillation amplitude = 4.09 V
• Supply current = 0.19 mA
• Power consumption:
P = IV
= 0.19x10-3 x 4.09
= 77.7 uW
h. POT position at mid-point:
• Oscillation frequency = 1.1 MHz
• Oscillation amplitude = 590 mV
• Supply current = 32.3 uA
• Power consumption:
P = IV
= 32.3x10-6 x 590x10-3
= 19.0 uW

DISCUSSION:

The calculations are readings indicate that the resonant frequency does not vary with
the change in MOS type as active load. However, power consumption is higher in the
case of resistive load and reduces when MOS is attached as active load. Replacement
of MOS with the resistive load in combination with the centre tapped capacitance can
provide better frequency stability and hence a smoother sinusoidal waveform.

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