FMY4A

Transistors

Power management (dual transistors)

FMY4A

zFeature zExternal dimensions (Unit : mm)

1) Both a 2SA1037AK chip and 2SC2412K chip in a
FMY4A
EMT or UMT or SMT package.

0.95 0.95
(3)
(2)
0.3

1.9

2.9
(4)
(1)

(5)
1.6
zEquivalent circuits 2.8

0.15

0.8
FMY4A

0to0.1
(3) (4) (5) 0.3to0.6
Each lead has same dimensions
ROHM : SMT5
Tr1
EIAJ : SC-74A
Tr2

(2) (1)

zAbsolute maximum ratings (Ta = 25°C)

Limits
Parameter Symbol Unit
Tr1 Tr2
Collector-base voltage VCBO −60 60 V
Collector-emitter voltage VCEO −50 50 V
Emitter-base voltage VEBO −6 7 V
Collector current IC −150 150 mA
Collector power dissipation PC 300 (TOTAL) mW ∗1
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
∗1 200mW per element must not be exceeded.

zPackage, marking, and packaging specifications

Part No. FMY4A
Package SMT5
Marking Y4
Code T148
Basic ordering unit (pieces) 3000

Rev.A 1/4
 FMY4A
Transistors

zElectrical characteristics (Ta=25°C)

Tr1 (PNP)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage BVCBO −60 − − V IC = −50µA
Collector-emitter breakdown voltage BVCEO −50 − − V IC = −1mA
Emitter-base breakdown voltage BVEBO −6 − − V IE = −50µA
Collector cutoff current ICBO − − −0.1 µA VCB = −60V
Emitter cutoff current IEBO − − −0.1 µA VEB = −6V
Collector-emitter saturation voltage VCE(sat) − − −0.5 V IC/IB = −50mA/−5mA
DC current transfer ratio hFE 120 − 560 − VCE = −6V , IC = −1mA
Transition frequency fT − 140 − MHz VCE = −12V , IE = 2mA , f = 100MHz ∗
Output capacitance Cob − 4 5 pF VCB = −12V , IE = 0A , f = 1MHz
∗ Transition frequency of the device.

Tr2 (NPN)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage BVCBO 60 − − V IC = 50µA
Collector-emitter breakdown voltage BVCEO 50 − − V IC = 1mA
Emitter-base breakdown voltage BVEBO 7 − − V IE = 50µA
Collector cutoff current ICBO − − 0.1 µA VCB = 60V
Emitter cutoff current IEBO − − 0.1 µA VEB = 7V
Collector-emitter saturation voltage VCE(sat) − − 0.4 V IC/IB = 50mA/5mA
DC current transfer ratio hFE 120 − 560 − VCE = 6V , IC = 1mA
Transition frequency fT − 180 − MHz VCE = 12V , IE = −2mA , f = 100MHz ∗
Output capacitance Cob − 2 3.5 pF VCB = 12V , IE = 0A , f = 1MHz
∗ Transition frequency of the device.

zElectrical characteristics curves

PNP Tr
−35.0 −100
−50 −10
VCE= −6V Ta=25˚C Ta=25˚C
Ta=100˚C −31.5
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : Ic (mA)

−20 25˚C −500

COLLECTOR CURRENT : IC (mA)

−40˚C −8 −28.0 −80 −450

−10 −400
−24.5 −350
−300
−5 −21.0 −60 −250
−6
−17.5 −200
−2
−14.0 −40 −150
−1 −4
−10.5
−100
−0.5
−7.0
−2 −20
−50µA
−3.5µA
−0.2
IB=0 IB=0
−0.1
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 0 −0.4 −0.8 −1.2 −1.6 −2.0 0 −1 −2 −3 −4 −5

BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO MITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.1 Grounded emitter propagation Fig.2 Grounded emitter output Fig.3 Grounded emitter output
characteristics characteristics (Ι) characteristics (ΙΙ)

Rev.A 2/4
 FMY4A
Transistors

500 500 −1

COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)

Ta=25˚C VCE= −5V Ta=100˚C Ta=25˚C
−3V 25˚C
−1V
−0.5

DC CURRENT GAIN : hFE

DC CURRENT GAIN : hFE

200 −40˚C
200

−0.2
100
IC/IB=50
100
−0.1 20
50
10
50
−0.05

VCE= −6V
−0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100

COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA)

Fig.4 DC current gain vs. Fig.5 DC current gain vs. Fig.6 Collector-emitter saturation
collector current (Ι) collector current (ΙΙ) voltage vs. collector current (Ι)

−1 1000 20

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

lC/lB=10 Ta=25˚C
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)

Ta=25˚C

: Cib (pF)
VCE= −12V f=1MHz
TRANSITION FREQUENCY : fT (MHz)

Cib
IE=0A
−0.5 500
10 IC=0A

Co
b
−0.2 200 EMITTER INPUT CAPACITANCE 5

Ta=100˚C
−0.1 25˚C 100
−40˚C
2
−0.05
50

−0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 0.5 1 2 5 10 20 50 100 −0.5 −1 −2 −5 −10 −20
COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.7 Collector-emitter saturation Fig.8 Gain bandwidth product vs. Fig.9 Collector output capacitance vs.
voltage vs. collector current (II) emitter current collector-base voltage
Emitter inputcapacitance vs.
emitter-base voltage

NPN Tr
0.50mA
50 100 10
Ta=25°C mA 30µA
VCE=6V 0.45 A Ta=25°C
COLLECTOR CURRENT : IC (mA)

0.40m
COLLECTOR CURRENT : IC (mA)

27µA
COLLECTOR CURRENT : IC (mA)

20 0.35mA
80 8 24µA
10 0.30mA
21µA
5 0.25mA
60 6 18µA
25°C
Ta=100°C

0.20mA
−55°C

2 15µA
0.15mA
40 4 12µA
1
0.10mA 9µA
0.5 6µA
20 2
0.05mA
0.2 3µA
0 IB=0A IB=0A
0.1 0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 0.4 0.8 1.2 1.6 2.0 0 4 8 12 16 20
BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.10 Grounded emitter propagation Fig.11 Grounded emitter output Fig.12 Grounded emitter output
characteristics characteristics ( Ι ) characteristics ( ΙΙ )

Rev.A 3/4
 FMY4A
Transistors

500

COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)

500 0.5
Ta=25°C VCE=5V Ta=25°C
Ta=100°C

25°C 0.2
DC CURRENT GAIN : hFE

DC CURRENT GAIN : hFE

200 VCE=5V 200
3V −55°C
1V IC/IB=50
0.1 20
100 100 10

0.05
50 50

0.02
20 20

10 10 0.01
0.2 0.5 1 2 5 10 20 50 100 200 0.2 0.5 1 2 5 10 20 50 100 200 0.2 0.5 1 2 5 10 20 50 100 200
COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA)

Fig.13 DC current gain vs. Fig.14 DC current gain vs. Fig.15 Collector-emitter saturation
collector current ( Ι ) collector current ( ΙΙ ) voltage vs. collector current
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)

0.5
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)

IC/IB=10 0.5
IC/IB=50 Ta=25°C

TRANSITION FREQUENCY : fT (MHz)

VCE=6V
500
0.2 Ta=100°C
0.2
25°C
Ta=100°C −55°C
0.1 25°C 0.1
−55°C 200
0.05 0.05

0.02 100
0.02

0.01 0.01
50
0.2 0.5 1 2 5 10 20 50 100 200 0.2 0.5 1 2 5 10 20 50 100 −0.5 −1 −2 −5 −10 −20 −50 −100
COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA)

Fig.16 Collector-emitter saturation Fig.17 Collector-emitter saturation Fig.18 Gain bandwidth product vs.
voltage vs. collector current ( Ι ) voltage vs. collector current (ΙΙ) emitter current
BASE COLLECTOR TIME CONSTANT : Cc·rbb' (ps)

20 Ta=25°C
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

Ta=25°C
200 f=32MHZ
EMITTER INPUT CAPACITANCE : Cib (pF)

f=1MHz
VCB=6V
IE=0A
10 Cib IC=0A
100

5
50

2 20
Co
b

1 10

0.2 0.5 1 2 5 10 20 50 −0.2 −0.5 −1 −2 −5 −10

COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER CURRENT : IE (mA)

EMITTER TO BASE VOLTAGE : VEB (V)
Fig.19 Collector output capacitance vs. Fig.20 Base-collector time constant
collector-base voltage vs. emitter current
Emitter input capacitance vs.
emitter-base voltage

Rev.A 4/4
Appendix

Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.

The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.

About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1
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