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50 TOP FET Questions and Answers pdf |
MCQs
FET Questions and Answers pdf :-
1. A JFET has three terminals, namely …………
1. cathode, anode, grid
2. emitter, base, collector
3. source, gate, drain
4. none of the above
Ans : 3
2. A JFET is similar in operation to …………. valve
1. diode
2. pentode
3. triode
4. tetrode
Ans : 2
3. A JFET is also called …………… transistor
1. unipolar
2. bipolar
3. unijunction
4. none of the above
Ans : 1
4. A JFET is a ………… driven device
1. current
2. voltage
3. both current and voltage
4. none of the above
Ans : 2
5. The gate of a JFET is ………… biased
1. reverse
2. forward
3. reverse as well as forward
4. none of the above
Ans : 1
6. The input impedance of a JFET is …………. that of an ordinary
transistor
1. equal to
2. less than
3. more than
4. none of the above
Ans : 3
7. In a p-channel JFET, the charge carriers are …………..
1. electrons
2. holes
3. both electrons and holes
4. none of the above
Ans : 2
8. When drain voltage equals the pinch-off-voltage, then drain
current …………. with the increase in drain voltage
1. decreases
2. increases
3. remains constant
4. none of the above
Ans : 3
9. If the reverse bias on the gate of a JFET is increased, then width of
the conducting channel …………..
 1. is decreased
2. is increased
3. remains the same
4. none of the above
Ans : 1
10. A MOSFET has …………… terminals
1. two
2. five
3. four
4. three
Ans : 4
11. A MOSFET can be operated with ……………..

negative gate voltage only

positive gate voltage only
positive as well as negative gate voltage
none of the above
Ans : 3

12. A JFET has ……….. power gain

small
very high
very small
none of the above
Ans : 2

13. The input control parameter of a JFET is ……………

gate voltage
source voltage
drain voltage
gate current
Ans : 1

14. A common base configuration of a pnp transistor is analogous to ………… of a

JFET

common source configuration

common drain configuration
common gate configuration
none of the above
Ans : 3

15. A JFET has high input impedance because …………

it is made of semiconductor material
input is reverse biased
of impurity atoms
none of the above
Ans : 2

16. In a JFET, when drain voltage is equal to pinch-off voltage, the depletion
layers ………

almost touch each other

have large gap
have moderate gap
none of the above
Ans : 1

17. In a JFET, IDSS is known as …………..

drain to source current

drain to source current with gate shorted
drain to source current with gate open
none of the above
Ans : 2

18. The two important advantages of a JFET are …………..

high input impedance and square-law property

inexpensive and high output impedance
low input impedance and high output impedance
none of the above
Ans : 1

19. …………. has the lowest noise-level

triode
ordinary trnsistor
tetrode
JFET
Ans : 4

20. A MOSFET is sometimes called ………. JFET

many gate
open gate
insulated gate
shorted gate
Ans : 3
21. Which of the following devices has the highest input impedance?

JFET
MOSFET
Crystal diode
ordinary transistor
Ans : 2

22. A MOSFET uses the electric field of a ………. to control the channel current

capacitor
battery
generator
none of the above
Ans : 1

23. The pinch-off voltage in a JFET is analogous to ………. voltage in a vacuum

tube

anode
cathode
grid cut off
none of the above
Ans : 3

25. In class A operation, the input circuit of a JFET is ………. biased

forward
reverse
not
none of the above
Ans : 2

26. If the gate of a JFET is made less negative, the width of the conducting
channel……….

remains the same

is decreased
is increased
none of the above
Ans : 3

27. The pinch-off voltage of a JFET is about ……….

5V
0.6 V
15 V
25 V
Ans : 1

28. The input impedance of a MOSFET is of the order of ………..

O
a few hundred O
kO
several MO
Ans : 4

29. The gate voltage in a JFET at which drain current becomes zero is
called ……….. voltage

saturation
pinch-off
active
cut-off
Ans : 2
31. In a FET, there are ……….. pn junctions at the sides

three
four
five
two
Ans : 4

32. The transconductance of a JFET ranges from ……………..

100 to 500 mA/V

500 to 1000 mA/V
0.5 to 30 mA/V
above 1000 mA/V
Ans : 3

33. The source terminal of a JEFT corresponds to ………….. of a vacuum tube

plate
cathode
grid
none of the above
Ans : 2

34. The output characteristics of a JFET closely resemble the output

characteristics of a ………. valve
pentode
tetrode
triode
diode
Ans : 1

35. If the cross-sectional area of the channel in n-channel JEFT increases, the
drain current ……….

is increased
is decreased
remains the same
none of the above
Ans : 1

36. The channel of a JFET is between the …………….

gate and drain

drain and source
gate and source
input and output
Ans : 2

37. For VGS = 0 V, the drain current becomes constant when VDS exceeds ………

cut off
VDD
VP
oV
Ans : 3

38. A certain JFET data sheet gives VGS(off) = -4 V. The pinch-off voltage Vp
is ……..

+4 V
-4 V
dependent on VGS
data insufficient
Ans : 1

39. The constant-current region of a JFET lies between

cut off and saturation

cut off and pinch-off
o and IDSS
pinch-off and breakdown
Ans : 4

40. At cut-off, the JFET channel is ……….

at its widest point

completely closed by the depletion region
extremely narrow
reverse baised
Ans : 2

41. A MOSFET differs from a JFET mainly because ………………

of power rating
the MOSFET has two gates
the JFET has a pn junction
none of the above
Ans : 3

42. A certain D-MOSFET is biased at VGS = 0 V. Its data sheet specifies IDSS =
20mA and VGS(off) = -5 V. The value of the drain current is …………

20 mA
0 mA
40 mA
10 mA
Ans : 1

43. A n-channel D-MOSFET with a positive VGS is operating in …………

the depletion-mode
the enhancement-mode
cut off
saturation
Ans : 2

44. A certain p-channel E-MOSFET has VGS(th) = -2V. If VGS= 0V, the drain
current is ……….

0 mA
ID(on)
maximum
IDSS
Ans : 1

45. In a common-source JFET amplifier, the output voltage is …………………

180o out of phase with the input
in phase with the input
90o out of phase with the input
taken at the source
Ans : 1

46. In a certain common-source D-MOSFET amplifier, Vds =3.2 V r.m. and Vgs =
280 mV r.m.s. The voltage gain is …………

1
11.4
8.75
3.2
Ans : 2

47. In a certain CS JFET amplifier, RD= 1kO , RS= 560 O , VDD=10V and gm=
4500 µS. If the source resistor is completely bypassed, the voltage gain is …………

450
45
2.52
4.5
Ans : 4

48. A certain common-source JFET has a voltage gain of 10. If the source bypass
capacitor is removed, ……………….

the voltage gain will increase

the transconductance will increase
the voltage gain will decrease
the Q-point will shift
Ans : 3

49. A CS JFET amplifier has a load resistance of 10 kO , RD= 820O . If gm= 5mS
and Vin= 500 mV, the output signal voltage is ………..

2.05 V
25 V
0.5 V
1.89 V
Ans : 4

50. If load resistance in the above question (Q.49) is removed, the output voltage
will …………
increase
decrease
stay the same
be zero
Ans : 1
SSC JE, UPSC ESE, IES, GATE 2018, IIT-JAM 2017, RAJASTHAN JEN,
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50 TOP OPAMP Circuits Questions and
Answers pdf
PAMP Circuits Questions and Answers pdf :-
1. A non inverting closed loop op amp circuit generally has a gain factor
A. Less than one
B. Greater than one
C. Of zero
D. Equal to one

Answer :- B. For non inverting amplifier the gain is A = 1 + (Rf/Rin)). So it will be

always more than one

2. If ground is applied to the (+) terminal of an inverting op-amp, the (–)

terminal will
A. Not need an input resistor
B. Be virtual ground
C. Have high reverse current
D. Not invert the signal

Answer :- B. Other options are not suitable.

3. The closed-loop voltage gain of an inverting amplifier equal to

A. The ratio of the input resistance to feedback resistance
B. The open-loop voltage gain
C. The feedback resistance divided by the input resistance
D. The input resistance

Answer :- C

4. When a number of stages are connected in parallel, the overall gain is the
product of the individual stage gains
A. True
B. False

Answer :- B

5. An ideal OP-AMP is an ideal

a) Current controlled Current source
b) Current controlled voltage source
c) Voltage controlled voltage source
d) voltage controlled current source

Answer :- C. The ideal Opamp output voltage is maintained constant. It is

controlled by input voltage.

6. The ideal OP-AMP has the following characteristics.

a) Ri=∞ ,A=∞ ,R0=0
b) Ri=0 ,A=∞ ,R0=0
c) Ri=∞ ,A=∞ ,R0=∞
d) Ri=0 ,A=∞ ,R0=∞

Answer :- A.
7.Calculate the cutoff frequency of a first-order low-pass filter for R1 = 2.5kΩ and
C1 = 0.05μF
A. 1.273kHz
B. 12.73kHz
C. 127.3 kHz
D. 127.3 Hz

Answer :- A.
Hint: low pass filter cut off frequency f = 1/(2πRC)

8. How many op-amps are required to implement this

equation
A. 2
B. 3
C. 4
D. 1

Answer :-D. The output voltage of inverting amplifier is Vout = (-Rf/Rin)Vin. By

keeping 1 inverting amplifier and three no of sources (V1, V2, V3) in series
corresponding input resistors(R1, R2, R3), we can get this equation.

9. How many op-amps are required to implement this equation Vo = V1

A. 4
B. 3
C. 2
D. 1

Answer :- D. The voltage follower which has one opamp has the output of Vo =
Vin

10. An OPAMP has a slew rate of 5 V/μ S .The largest sine wave O/P voltage
possible at a frequency of 1 MHZ is
A. 10 volts
B. 5 volts
C. 5/ volts
D. 5/2 volts

Answer :- D
Hint: Slew rate is defined as the max. rate of change of output voltage. Its unit is
V/μS.
Time period = 1/f = 1/1MHz = 1μS
V= Vm. sin(ωt) = Vm. sin(2πf.t)
slew rate = dV/dt = d(Vm. sin(2πf.t)/ dt=Vm. 2πf. cost…
OPAMP Circuits Multiple Choice Questions and Answers pdf ::
1) An ideal OP-AMP is an ideal
A. Current controlled Current source
B. Current controlled Voltage source
C. Voltage controlled Voltage source
D. Voltage controlled Current source

Answer :- C

2) A 741-Type OP-AMP has a gain-bandwith product of 1MHz. A non-inverting

amplifier using this opamp & having a voltage gain of 20db will exhibit -3db
bandwidth of
A. 50KHz
B. 100KHz
C. 1000/17KHz
D. 1000/7.07KHz

Answer :- A

3) An amplifier using an opamp with slew rate SR=1v/sec has a gain of 40db.If
this amplifier has to faithfully amplify sinusoidal signals from dc to 20KHz
without introducing any slew-rate induced distortion, then the input signal level
exceed
A. 795mV
B. 395mV
C. 795mV
D. 39.5mV

Answer :- C

4) The ideal OP-AMP has the following characteristics

A. Ri=∞,A=∞,R0=0
B. Ri=0,A=∞,R0=0
C. Ri=∞,A=∞,R0=∞
D. Ri=0,A=∞,R0=∞

Answer :- A

5) The approximate input impedance of the opamp circuit which has Ri=10k,
Rf=100k, RL=10k
A. ∞
B. 120k
C. 110k
D. 10k

Answer :- C
6) An opamp has a slew rate of 5V/ S. the largest sine wave o/p voltage possible at
a frequency of 1MHz is
A. 10 V
B. 5 V
C. 5V
D. 5/2 V

Answer :- A

7) Assume that the op-amp of the fig. is ideal. If Vi is a triangular wave, then V0
will be
A. Square wave
B. Triangular wave
C. Parabolic wave
D. Sine wave

Answer :- D

8) A differential amplifier is invariably used in the i/p stage of all op-amps. This is
done basically to provide the op-amps with a very high
A. CMMR
B. Bandwidth
C. Slew rate
D. Open-loop gain

Answer :- C

9) A differential amplifier has a differential gain of 20,000. CMMR=80dB. The

common mode gain is given by
A. 2
B. 1
C. 1/2
D. 0

Answer :- A

10) In the differential voltage gain & the common mode voltage gain of a
differential amplifier are 48db & 2db respectively, then its common mode
rejection ratio is
A. 23dB
B. 25dB
C. 46dB
D. 50dB

Answer :- C
1) Which of the following amplifier is used in a digital to analog converter?
(a) Non inverter
(b) Voltage follower
(c) Summer
(d) Difference amplifier

Answer :- C

2) Differential amplifiers are used in

(a) Instrumentation amplifiers
(b) Voltage followers
(c) Voltage regulators
(d) Buffers

Answer :-A

3) For an ideal op-amp, which of the following is true?

(a) The differential voltage across the input terminals is zero
(b) The current into the input terminals is zero
(c) The current from output terminal is zero
(d) The output resistance is zero

Answer :- C

4) The two input terminals of an opamp are labeled as

a) High and low
b) Positive and negative
c) Inverting and non inverting
d) Differential ans non differential

Answer :-C

5) When a step-input is given to an op-amp integrator, the output will be

(a) A ramp.
(b) A sinusoidal wave.
(c) A rectangular wave.
(d) A triangular wave with dc bias

Answer :- A

6) For an op-amp having differential gain Av and common-mode gain Ac the

CMRR is given by
A. Av + Ac
B. Av / Ac
C. 1 + Av / Ac)
D. Ac / Av
Answer :-B

7) Hysteresis is desirable in Schmitt-trigger, because

A. Energy is to be stored/discharged in parasitic capacitances.
B. Effects of temperature would be compensated.
C. Devices in the circuit should be allowed time for saturation and desaturation.
D. It would prevent noise from causing false triggering.

Answer :- C

8) The output voltage Vo of the above circuit is

(a) -6V
(b) -5V
(c) -1.2V
(d) -0.2V
Answer :- B

9) In the above circuit the current ix is

(a) 0.6A
(b) 0.5A
(c) 0.2A
(d) 1/12A
Answer :- B

10) Op-amp circuits may be cascaded without changing their input output
relationships
(a) True
(b) False
Answer :- A
SSC JE, UPSC ESE, IES, GATE 2018, IIT-JAM 2017, RAJASTHAN JEN,
DMRC, DRDO, RAILWAY JE, METRO And All Engineering Study
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50 TOP SEMICONDUCTOR DIODE
Questions and Answers pdf | MCQs
SEMICONDUCTOR DIODE Questions and Answers pdf :-
1. A crystal diode has ………
one pn junction
two pn junctions
three pn junctions
none of the above
ANS: 1
2. A crystal diode has forward resistance of the order of ……………
kΩ
Ω
MΩ
none of the above
ANS: 2
3. If the arrow of crystal diode symbol is positive w.r.t. bar, then diode
is ………….. biased.
forward
reverse
either forward or reverse
none of the above
ANS: 1

SEMICONDUCTOR DIODE
Questions and Answers pdf

4. The reverse current in a diode is of the order of ……………….

kA
mA
μA
A
ANS: 3
5. The forward voltage drop across a silicon diode is
about …………………
2.5 V
3V
10 V
0.7 V
ANS: 4

6. A crystal diode is used as ……………

an amplifier
a rectifier
an oscillator
a voltage regulator
ANS: 2
7. The d.c. resistance of a crystal diode is ………….. its a.c. resistance
the same as
more than
less than
none of the above
ANS: 3
8. An ideal crystal diode is one which behaves as a perfect ………..
when forward biased.
conductor
insulator
resistance material
none of the above
ANS: 1
9. The ratio of reverse resistance and forward resistance of a
germanium crystal diode is about ………….
1:1
100 : 1
1000 : 1
40,000 : 1
ANS: 4
10. The leakage current in a crystal diode is due to …………….
minority carriers
majority carriers
junction capacitance
none of the above
ANS: 1
11. If the temperature of a crystal diode increases, then leakage
current ………..
remains the same
decreases
increases
becomes zero
ANS: 3
12. The PIV rating of a crystal diode is ………….. that of equivalent
vacuum diode
the same as
lower than
more than
none of the above
ANS: 2
13. If the doping level of a crystal diode is increased, the breakdown
voltage………….
remains the same
is increased
is decreased
none of the above
ANS: 3
14. The knee voltage of a crystal diode is approximately equal
to ………….
applied voltage
breakdown voltage
forward voltage
barrier potential
ANS: 4
15. When the graph between current through and voltage across a
device is a straight line, the device is referred to as ……………….
linear
active
nonlinear
passive
ANS: 1
16. When the crystal current diode current is large, the bias is …………
forward
inverse
poor
reverse
ANS: 1
17. A crystal diode is a …………… device
non-linear
bilateral
linear
none of the above
ANS: 1
18. A crystal diode utilises …………….. characteristic for rectification
reverse
forward
forward or reverse
none of the above
ANS: 2
19. When a crystal diode is used as a rectifier, the most important
consideration is ………..
forward characteristic
doping level
reverse characteristic
PIC rating
ANS: 4
20. If the doping level in a crystal diode is increased, the width of
depletion layer………..
remains the same
is decreased
in increased
none of the above
ANS: 3
21. A zener diode has ………..
one pn junction
two pn junctions
three pn junctions
none of the above
ANS: 1
22. A zener diode is used as …………….
an amplifier
a voltage regulator
a rectifier
a multivibrator
ANS: 2
23. The doping level in a zener diode is …………… that of a crystal diode
the same as
less than
more than
none of the above
ANS: 3
24. A zener diode is always ………… connected.
reverse
forward
either reverse or forward
none of the above
ANS: 1
25. A zener diode utilizes ……….. characteristics for its operation.
forward
reverse
both forward and reverse
none of the above
ANS: 2
26. In the breakdown region, a zener didoe behaves like a ……………
source.
constant voltage
constant current
constant resistance
none of the above
ANS: 1
27. A zener diode is destroyed if it…………..
is forward biased
is reverse biased
carrier more than rated current
none of the above
ANS: 3
28. A series resistance is connected in the zener circuit to………..
properly reverse bias the zener
protect the zener
properly forward bias the zener
none of the above
ANS: 2
29. A zener diode is …………………. device
a non-linear
a linear
an amplifying
none of the above
ANS: 1
30. A zener diode has ………….. breakdown voltage
undefined
sharp
zero
none of the above
ANS: 2
31. ……………. rectifier has the lowest forward resistance
solid state
vacuum tube
gas tube
none of the above
ANS: 1
32. Mains a.c. power is converrted into d.c. power for ……………..
lighting purposes
heaters
using in electronic equipment
none of the above
ANS: 3
33. The disadvantage of a half-wave rectifier is that the……………….
components are expensive
diodes must have a higher power rating
output is difficult to filter
none of the above
ANS: 3
34. If the a.c. input to a half-wave rectifier is an r.m.s value of 400/√2
volts, then diode PIV rating is ………………….
400/√2 V
400 V
400 x √2 V
none of the above
ANS: 2
35. The ripple factor of a half-wave rectifier is …………………
2
1.21
2.5
0.48
ANS: 4
36. There is a need of transformer for ………………..
half-wave rectifier
centre-tap full-wave rectifier
bridge full-wave rectifier
none of the above
ANS: 2
37. The PIV rating of each diode in a bridge rectifier is ……………… that
of the equivalent centre-tap rectifier
one-half
the same as
twice
four times
ANS: 1
38. For the same secondary voltage, the output voltage from a centre-
tap rectifier is ………… than that of bridge rectifier
twice
thrice
four time
one-half
ANS: 4
39. If the PIV rating of a diode is exceeded, ………………
the diode conducts poorly
the diode is destroyed
the diode behaves like a zener diode
none of the above
ANS: 2
40. A 10 V power supply would use …………………. as filter capacitor.
paper capacitor
mica capacitor
electrolytic capacitor
air capacitor
ANS: 3
41. A 1,000 V power supply would use ……….. as a filter capacitor
paper capacitor
air capacitor
mica capacitor
electrolytic capacitor
ANS: 1
42. The ……………….. filter circuit results in the best voltage regulation
choke input
capacitor input
resistance input
none of the above
ANS: 1
43. A half-wave rectifier has an input voltage of 240 V r.m.s. If the
step-down transformer has a turns ratio of 8:1, what is the peak load
voltage? Ignore diode drop.
27.5 V
86.5 V
30 V
42.5 V
ANS: 4
44. The maximum efficiency of a half-wave rectifier is ………………..
40.6 %
81.2 %
50 %
25 %
ANS: 1
45. The most widely used rectifier is ……………….
half-wave rectifier
centre-tap full-wave rectifier
bridge full-wave rectifier
none of the above
ANS: 3