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USN 15ELN15/25

First/Second Semester B.E. Degree Examination, Dec.2016/Jan.2017

Note: Answer ]<7VEfull questions, choosing onefull question from each module.
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Module-l
5- 1 a. Define the following diode parameters: (05 Marks)
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-a ii) Maximum forward current
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vi '-' iv) Reverse breakdown voltage
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0. .:;: v) Maximum power rating. (06Marks)
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b. With neat circuit diagram and waveform explain the working of Full wave Bridge Rectifier.
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..011 c. Draw common emitter circuit. Sketch input and output characteristics. Also explain
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-S.~ 2 a. Write a note on voltage regulator circuit. (05 Marks)
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ex value and ~ value
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'" <ii transistor ifIB = 1OOIlAand Ie = 2mA. (04 Marks)
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c. With a neat diagram, explain the output characteristics of a transistor in common base
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~ <ii What is DC load line? Explain with neat circuit the operation of voltage divider bias circuit. '
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>-'6 b. What is op-amp? List the characteristics of an ideal op-amp. (06 Marks)
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4 a. Explain how op-amp can be used as
i) An integrator ii) D ifferentiator iii) Voltage follower. (06 Marks)
b. With neat circuit diagram, explain base biased method with necessary equations. (05 Marks)
c. Find the output ofthe following op-amp circuit. (05 Marks)

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Module-3
5 a. Convert(1101101)2=( )\Oand(96)10=( )2. (04 Marks)
b. Convert(FA876)16= ( )8 and (237)8 = ( )16. (04 Marks)
c. Design Full addcr circuit. (08 Marks)
OR
6 a. State and prove De Morgan's theorem. (05 Marks)
b. What are Universal gates? Realize AND, OR Gates using Universal gates. (05 Marks)
c. Subtract (19)\0 from (15)\0 using Is and 2s compliment methods. (06 Marks)

Module-4
7 a. Write a note on NOR gate latch. (05 Marks)
b. Explain the working of clocked RS flip flop using NAND gates.
c. Definc microcontrollers. Write their important applicatioris.
(06 Marks)
(05 Marks) ,
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8 a. Explain the architecture of 8051 micro controller. (08 Marks)

Modulc-S
9 a. Explain the block diagram of communication system. (05 Marks)
b. Define Amplitude modulation. Derive mathematical expressIon for the same. Draw
waveforms. (06 Marks)
c. Explain the construction and the principle of operation ofL VDT. (05 Marks)

OR
10 a. List the differences between Amplitude modulation and fi'equency modulation.
(05Marks)
b. ExplainfYequency modulation with neat waveforms. (05Marks)
c. A carrier of 10V peak and frequency 100KHz is amplitude modulated by a sine wave of 4V
peak and frequency 1000Hz. Determine the modulation index for the modulated wave and
draw the amplitude spectrum. (06Marks)
** ** *
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