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Code No:131AK
JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY, HYDERABAD
B.Tech I Year I Semester Examinations, December - 2018
BASIC ELECTRICAL AND ELECTRONICS ENGINEERING
(Common to EEE, ECE, CSE, EIE, IT, ETM)
Time: 3 hours Max. Marks: 75

Note: This question paper contains two parts A and B.


Part A is compulsory which carries 25 marks. Answer all questions in Part A.
Part B consists of 5 Units. Answer any one full question from each unit. Each
question carries 10 marks and may have a, b, c as sub questions.

PART - A
(25 Marks)
1.a) For the circuit shown in figure 1. Find the relation between v1 and v2. [2]

Figure: 1
b) Explain Source transformation with the help of neat diagrams. [3]
c) Write the statement of Super Position Theorem. [2]
d) What is Q-Factor and explain its significance? [3]
e) How does a diode appear as in its forward region of its characteristic? Explain. [2]
f) How does junction capacitance of a linearly graded junction varies with the applied
reverse voltage VR? [3]
g) Differentiate between the terms hFE and hfe. Write the relationship between them. [2]
h) Draw the h-parameters model of transistor. [3]
i) Give different regions of operation of JFET. [2]
j) What is pinch-off voltage? Give its equation. [3]

PART - B
(50 Marks)
2.a) Find Vo in the circuit, shown in figure 2.

Figure: 2
b) Define and give symbols of the following:
i) Dependent sources
ii) Independent Sources
iii) Practical Sources
iv) Ideal Souces [6+4]
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OR
3.a) If Req=50 ohm, in the circuit shown in figure 3 find R?

Figure: 3
b) Calculate Vo and Io in the circuit shown in figure 4.

[5+5]
Figure: 4

4.a) A parallel Resonant circuit has R= 5K, L=8mH, and C= 60μF. Determine:
i) Resonant frequency
ii) The band width
iii) The Quality Factor
b) Solve for ‘i’ using Norton’s Theorem in the circuit shown in figure 5.

[5+5]
Figure: 5
OR
5.a) Find vo using super position theorem in the circuit shown in figure 6.

Figure: 6
b) Find the Maximum power that can be delivered to R in the circuit shown in figure 7.

[5+5]
Figure: 7

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6.a) Compare C, L, L-Section,  -Section (CLC and CRC ) Filters in all respects.
b) Explain the operation of Half wave Rectifier with the help of neat diagrams. [6+4]
OR
7.a) Obtain different equivalent Circuits of a PN Junction diode.
b) Explain the VI characteristics of PN Junction diode with neat diagrams and explain.
What is Static Resistance and Dynamic Resistance? [5+5]

8. Draw CE Configuration with Voltage – divider bias and then analyze 00t of Q - point
and stability factors. [10]
OR
9. Illustrate the input and output characteristics of BJT in three configurations. [10]

10.a) Compare BJT and JFET devices in all respects.


b) Obtain the expression for the pinch off voltage Vp in case of n-channel JFET. [5+5]
OR
11. Describe the principle of operation and V-I characteristics with the help of energy band
diagrams. Highlight negative resistance region on the V-I characteristics. [10]

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