INSTRUCTION MANUAL

FOR
TRANSISTOR CHARACTERISTICS APPARATUS
MODEL NU. ME 533D &
(PNP & NPN
533P
lors made Transistor Characteristics APparatus
has been
haracteristics of a PNP & NPN transistor in common emitter anddesigned
to plot the Input, Output and Transfer
common base
configuration
The instrument comprises of the following built in parts;
1 Two continuously variable DC regulated power supplies of
0-1V and 0-10V
533P are
provided in ME 533D & ME

Jnput Voltage 230 V +10% AC, 50 Hz

Load Regulation
0.2%
Line Regulation
0.05%
Ripple Less than 3 mV R.M.S.
Protections Agairist Short Circuit &Over Load

2 Four meters to measure

voltage & current are mounted on front panel & connections
Sockets. brought out on 4mm
72mm deluxe type acrylic square meters in case of ME 533D.
() 3.5 digit LED digital panel meters in case of ME 533P.

5. Two transistors one PNP & the other NPN are placed inside the cabinet & connections
brought out on
sockets.

THEORY
A transistor is a
semiconductor device used to amplify and switch electronic
signals and electrical
power. It is composed of semiconductor material with at least three terminals for connection to an
external circuit. A voltage or current
applied to one pair of the transistor's terminals changes the current
through another pair of terminals. Because the controlled (output) power can be higher than the
controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged
individually, but many more are found embedded in integrated circuits. The essential usefulness of a
transistor comes from its ability to use a small signal appiied between one pair of its terminals to control
a much larger signal at another pair of terminals. This property is called gain. A transistor can control its
Output in proportion to the input signal; that is, it can act as an amplifier. Alternatively, the transistor can

be used to turn current on

off inacircuit as an electrically controled switch, where the amount of
or

Current is determined by other circuit

elements. Transistors are commonly úsed as electronic switches,
both for high-power applications such as switched-mode power supplies and for
low-power applicatons
Such as logic gates. The common-emitter
amplifier is designed so that a small change in voltage
 changes the small
combined with the current through the base or the transistor; the transistor's current
base of amplification
propertic
Vout.Various configurs
perties of the circuit mean that small swings in Vin produce large changes in

some voltage Ongurations

g of singie
transistor amplifier are possible, with some providing current gain,
S , and some
both. Bipolar transistors are so named because they conduct by using
both
inority carriers. The bipolar junction transistor, the
produced, is a combination of first type of transistor to be mass
two junction diodes, and is formed of either a thin layer of p-type
uetor
sandwiched between two n-type semiconductors (an n-p-n transistor), or a thin
e layer of n
SEmiconductor sandwiched between two
p-type semiconductors (a p-n-p transistor). This
u c t i o n produces two
p-n junctions: a base-emitter junction and a base-collector
junction
E d oy a thin
region semiconductor known
of as the base region (two junction diodes wired
gether without
sharing intervening semiconducting region will not make a transistor)
an
The BJT has
hree
terminals, corresponding to the three layers of semiconductor an emitter, a base
-

and a
t i s useful in
colieçtor.
amplifiers because the currents at the emitter and collector are controllable
by a relatively
small base
current. "[33] In an NPN transistor operating in the active region, the emitter-base
junction is
Toward biased
(electrons and electron holes recombine at the junction), and electrons are
the base
injected into
region. Because the base is narrow, most of these electrons will diffuse into the
reverse-biased
(electrons and holes are formed at, and move away from the
junction) base-collector junction and be
swept into the collector, perhaps one-hundredth of the electrons will
recombine in the base, which is the
dominant mechanism in the base current.
By controlling the number of electrons that can leave the
base, the number of electrons
entering collector can be controlled.(33] Collector current is
the
approximately (common-emitter current gain) times the base current. It is typically greater than 100 for
small-signal transistors but can be smaller in transistors for designed high-power
applications. Unlike the
field-effect transistor (see below), the BJT is a
low-input-impedance device. Also, as the base-emitter
voltage (Vbe) is increased the base-emitter current and hence
the collector-emitter current (lce)
increase exponentially according to the Shockley diode model and the
this
Ebers-Moll model. Because of
exponential relationship, the BJT has a higher
transconductance than the FET.Bipolar transistors
can be made to conduct by
exposure to light, since
absorption of photons in the base region generates
photocurrent that acts as a base current, the collector current
is
photocurrent. Devices designed for this purpose have a approximately B times the
phototransistors. transparent window in the package and are calle

PNP cOMMON EMITTER

CALCULATION FOR CONFIGURATION
TRANSISTOR
&
CONSTANTS
PROCEDURE
Connect the electrical circuits as shown in
the
the
connections collector bias as well as base Fig. (1). Keep the meter selector switch on
bias
both are negative with microampere side
respect to emitter.
 PNP COMMON EMITTER TRANSISTOR CHARACTERISTICS APPARATUS
ME 533D

-1V DC
0-260JA DC 0-50mA DC 10V DC

mA
TTA

OUTP UT
0-1V DC OUTPUT
10VDC

SET VOLTS5

SET VOLTS

PNP TRANSISTOR NPN TRANSISTOR

POWER

FIG. (1)

Input Characteristics:

Adjust collector to emitter voltage VcE (using VR,) at some suitable value
(say at -2 V) and keep it constant.
By adjusting input supply,(using VR,) set the basé to emitter
voltage, sothat base current shows value say
20uA. Note down base to emitter
voltage Va increase Ve in small steps and note the
current
corresponding base

Repeat step no.1& 2 for other values of VcE (say-6V, -8V etc).

Plot graph by taking base voltage Va along X-axis and base current
a

Ialong Y-axis as shown in Fig. (2).

Draw a tangent to VgE-l curve & determine its slope. The

reciprocal
of the slope gives the value of input resistance of transistor. VBE V
tush)
Ic(mA)
a(uA) INPUT CHARACTERISTICS
itput Characteristics: FIG. (2)

PAGE NO 3/ 15 DOC 5230

 6. Set collector
voltage VcE to 0.5v.
le=100 HA
7.
Adjust the base l8=75 HA
current to
50uA using VR1 and note
down
the'corresponding collector current I. Gradually in- lg=50 HA
Crease the collector voltage in small
steps (i,e, make it
2V,-2.5V, -3.0V, -8V etc) and note
-

the
values of collector current l corresponding
keeping the base current
constant. I VCE M
OUTPUT CHARACTERISTIC
8. FIG. (3)
Repeat steps 6 &7 for other value
of base current
I, (say 75uA,
9
100uA etc).
Plot a
graph by taking collector
voltage Vce along X-axis
Fig. (3) & collector
current I. along Y-axis.
10 Draw tangent on a Vce-l, Curve and
a

resistance of transistor. determine its slope,

reciprocal of the slope gives the
value of output

Transfer Characteristics:
11.
Adjust collector voltage at
it constant.
suitable value (say Vc=
-4V) and maintain

12.
Adjust base currentI
to a suitable small but
pte down the measurable value and
steps and note down the
corresponding collector current.
Increase l, in small
collector current I each lB (uA]
time.
13. Plot a
graph by taking TRANSFER
along Y-axis as shown in
base current
I, along X-axis and
collector e
CHARACTERISTIC
FIG. (4)
Fig. (4). The slope of
the graph
gives the value of current
PNP gain B
COMMON BASE
CALCULATION FOR CONFIGURATION &
TRANSISTOR CONSTANTS
Connect the electrical PROCEDURE
circuit as
connections collector bias is -veshown in the Fig. (5). Keep the meter
with respect to base & emitter selector switch on
bias is milliampere side. In the
positive with respect to base.
Input Characteristics
 PNP COMMON BASE TRANSISTOR CHARACTERISTICS APPARATUS
A
ME 6330

A
0-50mA DC 0-10V DC
0-1V DC 0-50mA DC

mA

A mA

B
OUTPUT
OUTPUT -10V DC
0-1V D

SET VOLTS
SET VOLTS

NPN TRANSISTOR
PNP TRANSISTOR
POWER

FIG. (5)

Adjust collector to base voltage Vca (using VR2) at some suitable value (say at -2V) and keep it constant
1.

2. By adjusting input supply set the emitter current to a small but measurable value say 5mA, note down the
corresponding emitter to base voltage VEp Increase VEs in small steps and note down the corresponding

emitter current I.

3 Repeat the siep no. 2 &3 for other values collector voltages (say -6V,
-8V etc)

4 Plot the graphs by taking emitter-base voltage VEa along X-axis and

emitter current along Y-axis as shown in Fig. (6) J

5.
.Draw a tangent to VEs-l curve & determine its slope. The reciproca
VEB [
the slope gives the value of input resistances of transistor. INPUT CHARACTERISTICS
FIG. (6)

Output Characteristics:-
 6. Adjust the emittercurrent |, to a suitable value (say 10mA).
E 20
7. Set collector
voltage Ve to 0.5v and note the correspond
ing collector current Gradually increase the collector E15 m
voltage in small steps (ie., make it
-2V,-2.5V, -3.0V,
10V etc) and note down
the corresponding values of col
lector current Ic
keeping the emitter
currentI, constant.
8 VcB M
Repeat steps
(say 15mA, 20mA
6 & 7 for other value
of emitter current I oUTPUT CHARACTERISTIC
etc) FIG. (7)
9. Plot graphs by taking collector
voltage Vcealong X-axis Fig. (7) &
10
collector current I, along Y.-axis
Draw a
tangent on a
Vce 1.curve and determine its
resistance of transistor. slope, reciprocal of the
slope gives the value of outo
Transfer Characteristics:
11
Adjust collector voltage at
maintain it constant. suitable value
(say Ve-4V) and
12.
Adjust emitter current le
to a
and note the suitable small
but
corresponding
steps and note collector current
measurable value inp
the collector current I. Increase le in E [mA]
Ie each time. small
13. Plot a TRANSFER
graph by taking CHARACTERISTICSs
along Y-axis as showremiter current le along X-axis and FIG. (8)
Fig. (8). The slope of collector
the
graph gives the vaue
NPN
COMMON EMITTER
CALCULATION FOR CONFIGURA &
TRANSISTOR COCONSTANTS
TRANSISTOR
Connect
the
the electrical
PROCEDURE
connections collectorcircuits as shown in the
bias as well Fig. (9).
as base Keep
ep the meter selector switch on microammere
AA
bias both the me side In
o h are
are positive
positive with respect to emitter
 NPN COMMON EMITTER TRANSISTOR CHARACTERISTICS APPARATUS
Pro 2000
ned Compeny MAAS
ME 533D

0-1V DC 0-250 A DC 0-50mA DC 0-10V DC

mA

A mA

OUTPUT
0-1VIDC
TTNY 0OUTPUT
-10VI
SET VOLTSs SET VOLTs

PNP TRANSISTOR NPN TRANSISTOR

POWER

IG. 9)

put Characteristics:

Proceed in the same manner as in case of PNP common

emitter characteristics & tabulate the results in the same type of table.
Plot a graph as shown in Fig. (10).

VBE [V
INPUT CHARACTERISTICS
FIG. (10)

Dutput Characteristics:

lB=100 A
Proceed in the same manner as in case of PNP
Common emitter characteristics & tabulate the results in the same lB=75 A
type of table. Plot a graph as shown in Fig. (11). le=50 uA

VcE [
OUTPUT CHARACTERISTIC
FIG. (11)

PAGE NO 7/15 DOC 533D

REV-04DT 1505 2013
 Transfer Characteristics:

Proceed exactly in the same manner as in case of PNP

common
emitter characteristics & plot a
graph as shown in Fig. (12).

TRANSFER
NPN COMMON BASE CHARACTERISTIC
FIG. (12)
CONFIGURATION &
CALCULATION FOR TRANSISTOR CONSTANTS

PROCEDURE
Connect the electrical circuits Ou
as shown in the Fig.
the connections collector bias
(13). Keep the meter selector switch on
is positive with respect to base & emitter bias is
milliampere side.
negative with respect to base

NPN COMMON BASE TRANSISTOR

CHARACTERISTICS APPARATUS
ARS
ME 533
0-1V DC
0-50mA DDC
0-50mA DC
0-10V DC

rar

NA

PA nA

oUTPUT
0-1V DC
OUTPUT
0-10V DC
T VOLTS

SET VOLTS

POWER PNP TRANSISTOR

NPN TRANSISTOR

FIG. (13)
put C h a r a c t e r i s t i c s : -

Proceed in the same manner as in case of PNP common

tabulate the results in the same type of table.

base characteristics &
Plot a graph as shown in Fig. (14).

VBE M
INPUT CHARACTERISTICS
FIG. (14)

- IE=20mA
utput Characteristics:
IE=15mA
Proceed in the same manner as in case of PNP
IE=10 mA
common base characteristics & tabulate the results in the same

type of table.Plot a graph as shown in Fig. (15).

VcB [V
OUTPUT CHARACTERISTIC
FIG. (15)

ansfer Characteristics:

Proceed exactly in the same manner as in case of PNP com-

mon base characteristics & plot a graph as shown in Fig. (16).

lE mA]
TRANSFER
CHARACTERISTIcS
FIG. (16)
STANDARD ACCESSORIES

Six Singlepoint& Four Interpoint (4mm) Patchcords for Interconnections.

Instruction Manual (DOC 533).

 Characteristics)
Emitter
OBSERVATIONS
(CQmmon

Charactoristics i.e VRE "

for constant VcE

A. For Input
Base Current linmA
Base Voltage
S.No. cE-8V
Voe Volts) VCE-6V
VcE-2V

5.
6

for constant
B. For Output Characteristicsi.e VcE
Collector Current I in mA
s.No. Collector Voltage
VcE (V
-75A 100m
=50pA

4.
5.

C. For Transfer Characteristics i.e l-1, for constant VcCE

Constant value of collector voltage VcE-Volts

S.No. Base Current () Collector Current (
1.

2.

3
4.

5.

6
 OBSERVATIONS (Common Base Characteristics)
For input characteristics i.e VEa l , for constant Va

S.No. Emitter voltage Emitter currentl, in mA

VEBVolts)
Vce-2V VCE-6V Vc-8V
1.

3.
4.
5.

B For Output Characteristics i.e, VcE-Ifor constant l

S.No. Collector Voltage Collector Current I, in mA
Vc (Volts)
10mA 15mA I 20mA

5.
5.

C. For Transfer characteristics i.e

l-I for constant VcB
Constant value of collector voltage Vc- Volts

S.No. Emitter Current (mA)

Collector Current (mA)
1.

2
3.

5.

PAGE NO 11/15 DOC 53an

(PNPCommon Emitter SAMPLE OBSERVATIONS
A. For
Input Characteristics):
Tor constant Characteristics
V 2v
i.e VBE B. For Output
Characteristics
50uA i.e VC
=
for constant
Base Voltage Base Current
VBE(Volts) in A Collector Voltage Collector Current
VE ) I in mA

0
0
0.1 0 0.2
2
0.2 0.4 4
0.3 0.6
0.4 0 0.8
7
0.5 0 1.0
8
0.6 10 1.2 8
0.7 80 1.4
8
0.8 215 1.6
0.9 Out of Scale
1.0
Out of Scale 10
8
PNP COMMON EMITTERMODE, INPUT
PNP COMMON EMITTER MODE,
CHARACTERISTICS
250
CHARACTERISTICs OUTPU 45
40
200 35
30
150
25
100 20
15

10

5 10
15

C. For Transfer Characteristics i.e l-I, for constant V¢ C

Constant value of collector voltage
V= 10Volts
PNP COMMON EMITTER
Base Current Collector Current MODE, TRANsFER
CHARACTERISTICs
in A | ,in mA 35

30

0 0
25 5 20

50 10 15

75 15
100 20
0
125 26
50
100
150 31 150 200
 (PNPCommon Base Characteristics): .

A. For Input Characteristics

i.eVBE "

B. For Output Characteristics i.e VcB"

for constant V= 2V for constant I,= 10mA

Base Voltage Emitter Current Collector Voltage Collector Current

in mA i n mA
VBEVolts)
7
0 0 10
0.1 0 10
0.2 0 10
0.3 10
0.4 10
0.5 6 10
0.6 3 7 10
0.7 11 8 10
0.8 28 9 10
0.9 40 10 10
1.0 Out of Scale

PNP COMIMON BASE MODE, INPUT PNP COMMON BASE MODE, OUTPUT
CHARACTERISTICS CHARACTERISTICS

10

10 5

C. For Transfer Characteristics i.e l-I for constant Vca

Constant value of collectorvoltage Vca= 10Volts
Emitter Current|Collector Current| PNP COMMON BASE MODE, TRANSFER
E in mA in mA CHARACTERISTICS

0 25
5
5
10 20

10
5 5
15
20 10
25 20
26

20 30

1 5

150

PAGE NO 13 15 DOC 5330